CN114325910B - Step characteristic passband narrowband optical filter - Google Patents
Step characteristic passband narrowband optical filter Download PDFInfo
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- CN114325910B CN114325910B CN202111538996.8A CN202111538996A CN114325910B CN 114325910 B CN114325910 B CN 114325910B CN 202111538996 A CN202111538996 A CN 202111538996A CN 114325910 B CN114325910 B CN 114325910B
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- 230000003287 optical effect Effects 0.000 title claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 238000007747 plating Methods 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- 239000005304 optical glass Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 description 54
- 238000002834 transmittance Methods 0.000 description 45
- 230000000694 effects Effects 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Abstract
The invention provides a ladder characteristic passband narrowband filter, comprising: the substrate, the two sides of the substrate are plated with the first membranous layer and second membranous layer separately; the structure from the substrate to the outer side of the first film layer is as follows: a (HL) b (HL) s c (HL) d (HL); the structure from the substrate to the outer side of the second film layer is as follows: (HL) n y(H)(LH) n x(H)L[(HL) n 2y(H)(LH) n L] m (HL) n+1 y(H)(LH) n The method comprises the steps of carrying out a first treatment on the surface of the Wherein H represents a high refractive index material film layer, and L represents a low refractive index material film layer; a. b, c, d, x, y the optical thickness of the film structure in brackets, the thickness unit is lambda/4, 0 < a, b, c, d < 2, -1 < x < 1, y is a multiple of the integer 2. m, n, s represent the number of repetitions of the structure in brackets.
Description
Technical Field
The invention relates to the technical field of narrowband filters, in particular to a step characteristic passband narrowband filter.
Background
The narrow-band filter, belonging to the band-pass filter, has the functions of filtering light and selecting spectral lines in an optical system and is an important thin film element. Its role in the optical system is: allowing the specific band of optical signals to pass while optical signals on both sides outside the passband are blocked. Thus, the interference of stray light in a non-working wave band can be reduced, and the signal to noise ratio of the system is improved. The common processing mode of the narrow-band optical filter is a multilayer film which is formed by alternately forming high-refractive-index material film layers and low-refractive-index material film layers, and the characteristic of a passband spectrum curve is similar to a Chinese character 'ji'. The narrow-band filter is sensitive to the working angle, and when the working angle is gradually increased from 0 DEG, the center wavelength position of the passband can continuously move to the short wave. The top of the passband of the common narrowband filter is flat, and the difference of transmittance values is small. When the product requires that the filter passband working characteristic is that the transmittance in the small working angle state is significantly lower or higher than that in the large working angle state (the spectrum passband is in a step characteristic), the common narrow-band filter design and processing method cannot be satisfied.
Disclosure of Invention
The invention aims to provide a step characteristic passband narrowband filter, which can enable the transmittance of the filter passband working characteristic to be obviously lower or higher than that of the filter passband working characteristic in a state of a small working angle.
A ladder feature passband narrowband filter comprising: the substrate, the said two sides of substrate plate the first membranous layer and second membranous layer separately;
the structure from the substrate to the outer side of the first film layer is as follows:
a(HL)b(HL)(HL) s c(HL)d(HL)；
the structure from the substrate to the outer side of the second film layer is as follows:
(HL) n y(H)(LH) n x(H)L[(HL) n 2y(H)(LH) n L] m (HL) n+1 y(H)(LH) n ；
wherein H represents a high refractive index material film layer, and L represents a low refractive index material film layer; a. b, c, d, x, y the optical thickness of the film structure in brackets, the thickness unit is lambda/4, lambda is the working wavelength, 0 < a, b, c, d < 2, -1 < x < 1, y is a multiple of the integer 2. m, n, s represent the number of repetitions of the structure in brackets.
Optionally, the material of the substrate is optical glass or colored glass.
Optionally, the high refractive index material has a refractive index value in the range of 2.0-3.0.
Optionally, the high refractive index material comprises TiO 2 、Ti 3 O 5 、Ta 2 O 5 、Nb 2 O 5 、ZrO 2 And ZnS.
Optionally, the total number of alternating plating layers of the high refractive index material and the low refractive index material in the first film layer is 30-50.
Optionally, the low refractive index material has a refractive index value in the range of 1.2-1.6.
Optionally, the low refractive index material comprises SiO 2 And MgF 2 At least one of them.
Optionally, the total number of alternating plating layers of the high refractive index material and the low refractive index material in the first film layer is 30-50;
optionally, the total number of alternating plating layers of the high refractive index material and the low refractive index material in the second film layer is 40-60.
The beneficial effects of the invention are as follows: the high refractive index material is selected from the full medium Fabry-Perot film structure as the reflecting layer, so that the angle offset of the pass band of the optical filter can be weakened, and the multi-angle working performance of the optical filter is ensured. The special asymmetric multi-cavity structure is adopted, a unique passband effect is modulated by a differential structure formed by different reflection stack layers and reflection layer thicknesses in each single cavity in the design, the center wavelength of a passband of a 1 st cavity is shifted to long waves/short waves by increasing/reducing the thickness of a sensitive layer in the 1 st cavity, the transmittance of a short wave end/long wave end of a tuned multi-cavity structure passband curve is reduced, the passband is of a step characteristic, the effect that the transmittance in a small working angle state is obviously lower than or higher than that in a large working angle state can be realized at the working wavelength, and the requirement that transmittance values of different working angles show obvious differences can be met; meanwhile, the design scheme of the thin film still maintains the passband bandwidth characteristic and the cutoff effect of the cutoff band of the common design scheme.
Drawings
FIG. 1 is a schematic diagram of the configuration of a ladder characteristic passband narrowband filter of the present invention;
FIG. 2 is a graph of passband spectral transmission for a filter according to one embodiment of the invention;
fig. 3 is a graph of passband spectral transmission for a filter according to another embodiment of the present invention.
In the above figures: 1, a substrate; 2 a first film layer; and 3, a second film layer.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Detailed Description
The present invention will be further explained in detail and fully with reference to the following examples, which are only a part of the present invention.
The invention provides a ladder characteristic passband narrowband filter, comprising: a substrate 1, wherein a first film layer 2 and a second film layer 3 are respectively plated on two sides of the substrate 1;
the structure from the substrate 1 to the outer side of the first film layer 2 is as follows:
a(HL)b(HL)(HL) s c(HL)d(HL)；
the structure from the substrate 1 to the outer side of the second film layer 3 is as follows:
(HL) n y(H)(LH) n x(H)L[(HL) n 2y(H)(LH) n L] m (HL) n+1 y(H)(LH) n ；
wherein H represents a high refractive index material film layer, and L represents a low refractive index material film layer; a. b, c, d, x, y the optical thickness of the film structure in brackets is expressed in lambda/4, lambda is the operating wavelength 1064nm,0 < a, b, c, d < 2, -1 < x < 1, y is a multiple of the integer 2. m, n, s represent the number of repetitions of the structure in brackets.
The film layer structure is a periodic bandpass filter film stack. The third film layer 3 is plated with high refractive index material film layers and low refractive index material alternately, and the third film layer 3 is of an all-medium 'Fabry-Perot' structure.
The technical principle of the invention can be briefly described as that the full-medium 'Fabry-Perot' film structure is utilized to realize the cut-off of long-wave and short-wave light rays in a certain range except the working wavelength, the band-pass filter film stack is utilized to realize the cut-off of light rays in wave bands except the absorption wave band of the substrate 1 material and the cut-off wave band of the 'Fabry-Perot' film structure, and finally, the band-pass bandwidth characteristics of a narrow passband and a wide cut-off band and the cut-off effect of the cut-off band are formed. In the all-medium Fabry-Perot structure, a high refractive index material is selected as a reflecting layer, so that the angle offset of a pass band of the optical filter can be weakened, and the multi-angle working performance of the optical filter is ensured.
In the first film layer 2, (HL) s The optical filter is a main part of a bandpass filter structure, inhibits light transmission in a specified wavelength range, and can inhibit passband ripple generation and improve performance through proper proportion of a (HL) b (HL) and c (HL) d (HL) on two sides.
In the second film layer 3, (HL) n y(H)(LH) n Is a typical all-dielectric single-cavity structure of Fabry-Perot, wherein 'y (H)' is a reflecting layer and two sides of the reflecting layer (HL) n "He" (LH) n "is a reflective stack. The low refractive index material L is inserted among the plurality of single-cavity structures to serve as a coupling layer, and the single-cavity structures can be connected in series to form a multi-cavity structure. Here, it will be close to the substrate (HL) n y(H)(LH) n The x (H) structure is referred to as the 1 st cavity, and x (H) is referred to as the sensitive layer in the 1 st cavity. The subsequent [ (HL) n 2y(H)(LH) n L] m+1 The structure is called the 2 nd, … … th, m+1 th cavity, last (HL) n+1 y(H)(LH) n The structure is called the m+2-th cavity.
The different structures formed by different reflecting stack layers and reflecting layer thicknesses in each single cavity in the design modulate a unique passband effect, the center wavelength of the passband of the 1 st cavity can shift to long waves/short waves by increasing/reducing the thickness of the sensitive layer in the 1 st cavity, and the transmittance of the short wave end/long wave end of the tuned passband curve of the multi-cavity structure is reduced, the passband is in a step characteristic, and the effect that the transmittance in a small working angle state is obviously lower or higher than that in a large working angle state can be realized at the working wavelength.
Example 1
A specific embodiment is now provided for illustration, wherein the substrate 1 in the step-feature passband narrowband filter of the present invention is selected from HWB850 glass, and the high refractive index film H is Ta 2 O 5 SiO is selected as the material of the low refractive index film layer L 2 After polishing and cleaning the substrate 1, ta is alternately evaporated on one side of the substrate 1 2 O 5 Layer and SiO 2 A layer to form a first film layer 2, ta in the first film layer 2 2 O 5 Layer and SiO 2 The total number of layers was 33. Ta is alternately evaporated on the other surface of the substrate 1 2 O 5 Layer and SiO 2 Ta in layer 3 of the second film 2 O 5 Layer and SiO 2 The total number of layers was 46. Ta in the first film layer 2 and the second film layer 3 2 O 5 The thickness of the layer was set to 130nm, siO 2 The thickness of the layer was set to 190nm, ta 2 O 5 The refractive index of the material at 546nm is 2.20, siO 2 Refractive index at 546nm was 1.48; assisted evaporation of Ta using ion beams 2 O 5 Layer and SiO 2 Layer, ta 2 O 5 Is 0.2nm/s, ar is 15sccm, O 2 85sccm, ion source energy of 70000 w, siO 2 Is 0.3nm/s, ar is 15sccm, O 2 15sccm, and 8000w.
The film system structure obtained in this example is as follows:
first film layer 2: the center wavelength is 880nm and the wavelength of the light,
0.8(HL)0.9(HL)(HL) 11 0.8(HL)1.5(HL)；
second film layer 3: the center wavelength is 1070nm,
(HL) 2 (2)H(LH) 2 (0.5)HL[(HL) 2 (4)H(LH) 2 L] 2 (HL) 3 (2)H(LH) 2 ；
wherein, H: a film layer of Ta2O5 material; l: a SiO2 material film layer.
When the spectral measurement is performed on the optical filter of this embodiment, as shown in fig. 2, the transmittance of the optical filter prepared in this embodiment is almost 0 at the wavelength 1040-1045nm stage, the transmittance starts to rise to 5% at the wavelength 1045-1050nm stage, the transmittance rises to 60% at the wavelength 1050-1055nm stage, the transmittance hardly changes at the wavelength 1055-1057nm stage, the transmittance rises to 85% at the wavelength 1057-1063nm stage, the transmittance remains 85% at the wavelength 1063-1068nm stage, the transmittance drops to 1% at the wavelength 1068-1085nm stage, and the transmittance slowly drops to 0 at the wavelength 1085-1100nm stage.
When the working angle is 0 DEG, the transmittance of the optical filter prepared in the embodiment is almost 0 in the stage of wavelength 1040-1050nm, the transmittance starts to rise to 2% in the stage of wavelength 1050-1055nm, the transmittance rises to 56% in the stage of wavelength 1055-1063nm, the transmittance is almost unchanged in the stage of wavelength 1063-1065nm, the transmittance rises to 87% in the stage of wavelength 1065-1073nm, the transmittance is kept to 87% in the stage of wavelength 1073-1077nm, the transmittance drops to 2% in the stage of wavelength 1077-1090nm, and the transmittance slowly drops to 0 in the stage of wavelength 1090-1100 nm.
As can be seen from fig. 2, in the wavelength 1045-1071nm stage, the transmittance of the filter is significantly higher in the large working angle (12 °) state than in the small working angle (0 °); in the wavelength 1071-1090nm stage, the transmittance of the optical filter is obviously lower in the state of small working angle (0 DEG) than in the state of large working angle (12 DEG). The transmittance of the optical filter in the state of a large working angle (12 °) is significantly higher than that in the state of a small working angle (0 °) at the working wavelength λ=1064 nm.
Example 2
Another specific embodiment is now presented for illustration, wherein the substrate 1 material in the step-feature passband narrowband filter of the present invention is HWB850 glass, the high refractive index film H is ZnS material, and the low refractive index film L is MgF 2 Material, after polishing and cleaning the substrate 1, znS layers and MgF layers are alternately plated on one side of the substrate 1 2 A layer for forming a first film layer 2, on the other surface of the substrate 1, znS layers and MgF layers are alternately plated 2 A layer, thereby forming a second film layer 3. ZnS layer and MgF in first film layer 2 The total number of layers is 33, znS layer and MgF layer in the second film layer 3 2 The total number of layers is 46, the thickness of each ZnS layer is set to 120nm, and each MgF layer 2 The thickness of the layer was set to 200nm, the refractive index of ZnS material at 546nm was 2.30, mgF 2 The refractive index of the material at 546nm is 1.38; adopting ion beam to assist evaporation, wherein the evaporation rate of ZnS is 0.2nm/s, ar is 20sccm, and the ion beam is separated fromThe power of the sub-source is 300W, mgF 2 The evaporation rate of (2) was 0.6nm/s, ar was 20sccm, and the ion source power was 300W.
The film system structure obtained in this example is as follows:
first film layer 2: the center wavelength is 880nm and the wavelength of the light,
0.8(HL)0.9(HL)(HL) 11 0.8(HL)1.5(HL)；
second film layer 3: the center wavelength is 1070nm,
(HL) 2 (2)H(LH) 2 (0.44)HL[(HL) 2 (4)H(LH) 2 L] 2 (HL) 3 (2)H(LH) 2 ；
wherein, H: a ZnS material film layer; l: mgF (MgF) 2 A material film layer.
When the spectrum measurement is performed on the optical filter obtained in this example, as shown in fig. 3, the transmittance of the optical filter prepared in this example is almost 0 at the wavelength 1040-1050nm stage, the transmittance starts to rise to 2% at the wavelength 1050-1055nm stage, the transmittance rises to 45% at the wavelength 1055-1058nm stage, the transmittance drops to 42% at the wavelength 1058-1062nm stage, the transmittance rises to 75% at the wavelength 1062-1065nm stage, the transmittance drops to 70% at the wavelength 1065-1067nm stage, the transmittance drops to 2% at the wavelength 1067-1075nm stage, and the transmittance slowly drops to 0 at the wavelength 1075-1100nm stage.
When the working angle is 0 degree, the transmittance of the optical filter prepared in the embodiment is almost 0 in the stage of the wavelength 1040-1060nm, the transmittance is exponentially increased to 37% in the stage of the wavelength 1060-1065nm, the transmittance is exponentially decreased to 36% in the stage of the wavelength 1065-1067nm, the transmittance is exponentially increased to 75% in the stage of the wavelength 1067-1073nm, the transmittance is slowly decreased to 74% in the stage of the wavelength 1073-1075nm, the transmittance is exponentially decreased to be close to 0 in the stage of the wavelength 1077-1085nm, and the transmittance is almost 0 in the stage of the wavelength 1085-1100 nm.
As can be seen from fig. 3, in the wavelength 1050-1069nm stage, the transmittance of the filter is significantly higher in the large operating angle (12 °) state than in the small operating angle (0 °); in the wavelength 1069-1085nm stage, the transmittance of the optical filter is obviously lower in the state of a large working angle (12 DEG) than in the state of a small working angle (0 DEG). The transmittance of the optical filter in the state of a large working angle (12 °) is significantly higher than that in the state of a small working angle (0 °) at the working wavelength λ=1064 nm.
The foregoing is only a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions easily contemplated by those skilled in the art within the technical scope of the present invention should be included in the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims. The components and structures not specifically described in this embodiment are well known in the art and are not described in detail herein.
Claims (8)
1. A stepped feature passband narrowband filter comprising: the substrate (1), the two sides of the substrate (1) are plated with a first film layer (2) and a second film layer (3) respectively;
the structure from the substrate (1) to the outer side of the first film layer (2) is as follows:
a(HL)b(HL)(HL) s c(HL)d(HL)；
the structure from the substrate (1) to the outer side of the second film layer (3) is as follows:
(HL) n y(H)(LH) n x(H)L[(HL) n 2y(H)(LH) n L] m (HL) n+1 y(H)(LH) n ；
wherein H represents a high refractive index material film layer, and L represents a low refractive index material film layer; a. b, c, d, x, y the optical thickness of the film structure in brackets, the thickness unit is λ/4, λ is the working wavelength, a=0.8, b=0.9, c=0.8, d=1.5, -1 < x < 1, y=2; m=2, n=2, s=11, representing the number of repetitions of the structure in brackets.
2. The ladder characteristic passband narrowband filter of claim 1, where the material of the substrate (1) is optical glass or colored glass.
3. The ladder passband narrowband filter of claim 1, wherein the high refractive index material has a refractive index value in the range of 2.0-3.0.
4. The ladder characteristic passband narrowband filter of claim 3, where the high refractive index material comprises TiO 2 、Ti 3 O 5 、Ta 2 O 5 、Nb 2 O 5 、ZrO 2 And ZnS.
5. The ladder characteristic passband narrowband filter of claim 3 or 4, wherein the total number of alternating plating of high refractive index material and low refractive index material in the first film layer (2) is 30-50.
6. The ladder characteristic passband narrowband filter of claim 1, where the low refractive index material has a refractive index value in the range of 1.2-1.6.
7. The ladder characteristic passband narrowband filter of claim 6, where the low refractive index material comprises SiO 2 And MgF 2 At least one of them.
8. The ladder characteristic passband narrowband filter of claim 6 or 7, wherein the total number of alternating plating of high refractive index material and low refractive index material in the second film layer (3) is 40-60.
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| JPH11326633A (en) * | 1998-05-18 | 1999-11-26 | Japan Aviation Electronics Ind Ltd | Wavelength selecting element and optical device using the same |
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