CN114302568A - Preparation method of conductive circuit - Google Patents
Preparation method of conductive circuit Download PDFInfo
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- CN114302568A CN114302568A CN202111636372.XA CN202111636372A CN114302568A CN 114302568 A CN114302568 A CN 114302568A CN 202111636372 A CN202111636372 A CN 202111636372A CN 114302568 A CN114302568 A CN 114302568A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 239000004020 conductor Substances 0.000 claims abstract description 92
- 239000000758 substrate Substances 0.000 claims abstract description 74
- 239000003292 glue Substances 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 8
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims abstract description 5
- 238000011049 filling Methods 0.000 claims abstract description 4
- 238000010030 laminating Methods 0.000 claims abstract description 3
- 238000010586 diagram Methods 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 238000001723 curing Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000001020 plasma etching Methods 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000003848 UV Light-Curing Methods 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 238000004049 embossing Methods 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000002114 nanocomposite Substances 0.000 claims description 2
- 238000007639 printing Methods 0.000 claims description 2
- 238000003912 environmental pollution Methods 0.000 abstract description 2
- 238000001259 photo etching Methods 0.000 abstract description 2
- 239000000654 additive Substances 0.000 abstract 1
- 230000000996 additive effect Effects 0.000 abstract 1
- 238000005554 pickling Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 12
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 239000002904 solvent Substances 0.000 description 6
- 239000010410 layer Substances 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 3
- 230000010076 replication Effects 0.000 description 3
- 239000011889 copper foil Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 238000007790 scraping Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000001523 electrospinning Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
The invention discloses a preparation method of a conducting circuit, which comprises the following steps: (1) a transfer substrate and imprint template having a pattern of lines are provided. (2) And coating an imprinting glue on the transfer substrate, and laminating the imprinting template provided with the circuit pattern with the imprinting glue to form a circuit pattern groove. (3) And filling the conductive material into the groove. (4) The imprint paste is removed and made to be lower in height than the conductive material. (5) And (3) attaching the conductive material on the transfer substrate to the target substrate, combining the conductive material and the target substrate, and stripping the transfer substrate to obtain the conductive circuit. The preparation method provided by the invention does not need traditional photoetching, pickling and other processes, is an additive manufacturing method, and has the advantages of small environmental pollution, high precision of the prepared line, smooth edge, controllable thickness, good conductivity and good bonding force with a base material.
Description
Technical Field
The invention relates to a method for manufacturing a conducting circuit, in particular to a method for manufacturing a high-precision conducting circuit.
Background
The statements in this section merely provide background information related to the present disclosure and may not constitute prior art.
With the development of electronic technology, miniaturization and precision have become important development directions of modern electronic devices and products. The size of electronic components has begun to be developed from the original millimeter level (package size: 1206-. The manufacturing method is also changed from the original printing preparation to photoetching or other more precise preparation modes. Meanwhile, the development of chip technology is also directed to higher density packaging, which requires a more precise carrier to match with. It can be said that to meet the development requirements of modern electronics, more precise micron-scale circuit preparation technology must be developed. However, most of the current conductive circuits still adopt a copper foil etching technology, and the precision of the circuits is generally about 50 μm; if the precision is further improved, the original yellow light technology and the copper foil material are correspondingly optimized, so that the production cost is greatly improved, and the yield of products is reduced.
Among the many sophisticated circuitry fabrication techniques that are currently under development, printed electronics technology has shown some promise. Such as ink-jet printing technology, can realize the preparation of lines with the line width of 20-30 mu m; through some special treatments, even the circuit preparation of a few microns can be realized; however, the thickness of the lines prepared by the ink-jet technology is generally below 1 μm, which affects the signal load capacity of the lines. Gravure offset printing technology can achieve line preparation with line widths of 20 μm, but its thickness is also typically less than 2 μm. The electrospinning technology can realize the preparation of circuits with the line width of several microns, but the preparation method needs to be carried out in a high electric field, and the conductive material and the base material are selected.
The imprint technique is a pattern replication technique, which can realize the replication of patterns from millimeter to nanometer, and has the characteristics of high replication dimensional precision, low batch cost and the like. At present, the application of the transparent conductive film and the touch screen can be realized by combining the metal mesh technology of the conductive material with the imprinting technology. However, the imprinting glue layer of the imprinting line can be softened or even carbonized under high temperature conditions and during component welding, and the imprinting conductive line is damaged, so that the application range of the imprinting line is limited.
It should be noted that the above background description is only for the sake of clarity and complete description of the technical solutions of the present invention and for the understanding of those skilled in the art. Such solutions are not considered to be known to the person skilled in the art merely because they have been set forth in the background section of the invention.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a preparation method of a conducting circuit, which solves the problems of low precision and poor load capacity of the conducting circuit; meanwhile, the problems of strict requirements on the substrate and the conductive material and limited application prospect are solved.
In order to solve the technical problem, the invention provides a preparation method of a conducting circuit, which comprises the following steps:
(1) a transfer substrate and an imprint template having a pattern of lines are provided.
The transfer substrate is a flexible substrate, and the imprinting template is a flexible template with a precise line pattern and controllable embossing height.
(2) And coating an imprinting glue on the transfer substrate, and then laminating the imprinting template provided with the circuit pattern with the imprinting glue to form a circuit pattern groove.
After the line pattern is printed on the imprinting adhesive layer of the imprinting template, the imprinting template is separated in a UV curing mode under a vacuum condition, and a line pattern groove is obtained. The specific operation steps are as follows: and (4) irradiating and curing the UV light on the side of the transfer substrate which is not coated with the imprinting glue, and demolding the imprinting glue to obtain the groove of the precise line pattern.
(3) And filling the conductive material into the circuit diagram groove.
Finally, the height of the conducting circuit prepared on the target substrate is determined by the depth of the groove in the process of impressing and the thickness of the filled conducting material.
(4) And removing the stamping glue on the transfer substrate to make the height of the stamping glue lower than that of the conductive material.
The mode of removing the imprinting glue adopts a plasma etching method, the etching depth is controlled by parameters such as etching time, strength, frequency and the like, and the conductive material in the groove is exposed and higher than the imprinting glue layer.
(5) And attaching the conductive material on the transfer substrate to the target substrate, combining the conductive material and the target substrate, and peeling off the transfer substrate to obtain the conductive circuit.
The target substrate is a rigid substrate such as glass, ceramic, or the like. And after the conductive material is attached to the target substrate, the conductive material and the target substrate are combined in a heating mode. When the temperature is heated to 140-200 ℃, the conductive material and the target substrate can be pre-cured together to form a certain bonding force. Meanwhile, the imprinting adhesive is softened to a certain degree at the temperature, so that the bonding force between the imprinting adhesive and the conductive material is weakened, and only the conductive circuit with a precise pattern is left.
The step of curing is also included after the conductive material is bonded to the target substrate. And the bonding force between the conductive material and the target substrate is further improved and the electrical property is further improved through sufficient curing.
The conductive material is one or more of a micro-nano metal conductive material, a micro-nano alloy conductive material and a micro-nano composite metal conductive material.
The micro-nano conductive material is one or more of a micro-nano silver conductive material, a micro-nano copper conductive material, a micro-nano gold conductive material, a micro-nano nickel conductive material, a micro-nano aluminum conductive material, a micro-nano silver-coated copper conductive material, a micro-nano silver-coated aluminum conductive material and a micro-nano silver-coated nickel conductive material.
The conductive material contains an adhesive force material capable of increasing adhesive force. Such as a small amount of glass frit or other adhesion promoting material.
The high-performance conductive circuit prepared by the preparation method has high precision, good line quality and controllable thickness, the line width and the line distance of the high-performance conductive circuit are less than 40 mu m, and the thickness of the high-performance conductive circuit is 0.5-20 mu m. The line width and line distance are preferably 10-15 μm, and the line thickness is preferably 0.7-16 μm.
By means of the technical scheme, the invention has the following beneficial effects:
1. the invention realizes the preparation of precise circuits with the line width and the line distance smaller than 40 mu m on rigid substrates such as glass, ceramics and the like, the circuits are directly combined with the substrate, no substances such as an adhesive layer and the like exist in the middle, no organic matter remains on the substrate, the internal structure of the circuits is compact, and the circuits can bear high-temperature treatment; 2. the line has high precision, good line quality, good verticality, smooth and flat edge and controllable thickness of 0.5-20 mu m; 3. the conductive performance is high, the subsequent process operations such as welding binding and the like can be carried out, and the compatibility with the SMT and other processes is good; 4. the preparation problem and the environmental pollution problem of the traditional copper fine circuit are solved; 5. the application prospect of the existing circuit is expanded, and the circuit can be applied to the fields of fine carrier plate circuits, precise circuits, consumer electronics and the like.
Drawings
FIG. 1 is a schematic diagram of a process for imprinting a precise line pattern on a transfer substrate by an imprinting template;
FIG. 2 is a schematic diagram of the process of demolding the imprint template and filling the imprint template with a conductive material;
FIG. 3 is a schematic illustration of plasma etching to expose or elevate the conductive material above the imprint resist;
FIG. 4 is a schematic diagram of a process of transferring a conductive line from a transfer substrate to a target substrate.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-4, the method of making the conductive traces according to the preferred embodiment of the present disclosure is as follows:
example 1
A transparent 125 μm thick polyethylene terephthalate film (PET) was used as the transfer substrate 20. Firstly, a layer of imprint glue 21 is coated on the transfer substrate 20, and then the imprint template 10 with the precise line pattern is pressed with the imprint glue layer 21. The imprinting template 10 adopts a nickel plate, and the imprinting process adopts rolling and vacuumizing to ensure that the imprinting glue 21 is tightly contacted with the imprinting template 10 and no bubble or pore exists between the imprinting glue and the imprinting template 10; the imprint glue 21 is then irradiated with UV light from the back of the transfer substrate 20 and cured for a curing time of 30 to 60 seconds. After the imprint paste 21 is cured, the imprint template 10 is separated and released from the mold, thereby forming grooves of a precise line pattern on the imprint paste 21. After the circuit groove is formed, the conductive material 30 is scraped into the groove in a scraping mode; the conductive material 30 is an ink slurry containing micro-nano silver particles, a small amount of glass powder particles, resin and solvent materials; after the conductive material 30 is scraped into the groove, the conductive material is baked at a low temperature (80 ℃) to volatilize the solvent. Finally, the thickness of the conductive material 30 filled in the groove is determined by the depth of the groove and the amount of the conductive material filled by blade coating.
After the conductive material 30 is filled into the groove in the imprinting adhesive 21, along with the volatilization of the solvent, the height of the conductive material 30 in the groove is lower than the height of the upper surfaces of the imprinting adhesive 21 at the two sides; then, etching the imprinting glue 21 by adopting a plasma etching method to enable the conductive material 30 to be exposed or higher than the upper surface of the imprinting glue 21; the depth of the etching is based on the conductive material 30 being 2-4 μm higher than the imprint resist.
Subsequently, the conductive material 30 on the transfer substrate 20 is attached facing the target substrate 40, and the target substrate 40 is a glass substrate; when in fitting, a certain pressure is applied to make the two completely contact and fit. Then, the conductive material 30 and the target substrate 40 are pre-cured by processing for 15 minutes at the temperature of 120-150 ℃, and the conductive material 30 and the target substrate 40 form a certain bonding force. And then, the temperature is raised to about 200 ℃, so that the conductive material 30 is further solidified, the bonding force between the conductive material 30 and the target substrate 40 is improved, the imprinting glue 21 is softened at about 200 ℃, the conductive material 30 is conveniently separated from the imprinting glue 21 during demolding, and the conductive material 30 is transferred to the target substrate 40. Finally, the target substrate 40 with the conductive circuit 30 is further heated and cured, and heated to 450 ℃ for 2-3 minutes, so that the conductive material 30 is completely cured and the bonding force with the target substrate 40 reaches an optimal value. Therefore, a high-precision conductive circuit with the line width of 10 mu m and the thickness of 0.7 mu m is realized on the glass substrate, the resistivity of the circuit reaches 2.8m omega/□/mil, and the bonding force with the substrate reaches 5B.
Example 2
A non-transparent 125 μm thick polyimide film (PI) is used as a transfer substrate 20, and a layer of imprint resist 21 is first applied to this transfer substrate 20. Then pressing the imprinting template 10 with the precise line pattern with the imprinting adhesive layer 21; the imprinting template 10 adopts a transparent soft plate; in the imprinting process, rolling and vacuumizing are adopted, so that the imprinting glue 21 is tightly contacted with the template 10, and no air bubbles or pores exist between the imprinting glue 21 and the template 10; the imprint paste 21 is then irradiated with UV light from the upper portion of the imprint template 10 and cured for 30 to 60 seconds. After the imprint paste 21 is cured, the imprint template 10 is separated and released from the mold, thereby forming grooves of a precise line pattern on the imprint paste 21. After the circuit groove is formed, the conductive material 30 is scraped into the groove in a scraping mode; the conductive material 30 is an ink slurry containing micro-nano silver particles, a small amount of glass powder particles, resin and solvent materials; after the conductive material 30 is scraped into the groove, baking is carried out under the condition of low temperature (80 ℃) to volatilize the solvent; finally, the thickness of the conductive material 30 filled in the groove is determined by the depth of the groove and the amount of the conductive material filled by blade coating.
After the conductive material 30 is filled into the groove in the imprinting adhesive 21, along with the volatilization of the solvent, the height of the conductive material 30 in the groove is lower than the height of the upper surfaces of the imprinting adhesive 21 at the two sides; then, etching the imprinting glue 21 by adopting a plasma etching method to enable the conductive material 30 to be exposed or higher than the upper surface of the imprinting glue 21; the depth of the etching is based on the conductive material 30 being 2-4 μm higher than the imprint resist.
Subsequently, the conductive material 30 on the transfer substrate 20 is attached facing the target substrate 40, and the target substrate 40 is a ceramic substrate; when in fitting, a certain pressure is applied to make the two completely contact and fit. Then, the conductive material 30 and the target substrate 40 are pre-cured by processing for 15 minutes at the temperature of 120-150 ℃, and the conductive material 30 and the target substrate 40 form a certain bonding force. And then the temperature is raised to about 200 ℃, so that the conductive material 30 is further solidified, the bonding force between the conductive material 30 and the target substrate 40 is improved, the imprinting glue 21 is softened at about 200 ℃, the conductive material 30 is conveniently separated from the imprinting glue 21 during demolding, and the conductive material 30 is transferred to the target substrate 40. Finally, the target substrate 40 with the conductive circuit 30 is further heated and cured, and heated to 550 ℃ for 1-2 minutes, so that the conductive material 30 is completely cured and the bonding force with the target substrate 40 reaches an optimal value. Therefore, a high-precision conductive circuit with the line width of 15 mu m and the thickness of 16 mu m is realized on the ceramic substrate, the resistivity of the circuit reaches 2.4m omega/□/mil, and the bonding force with the substrate reaches 5B.
The above-mentioned embodiments are merely preferred embodiments for fully illustrating the present invention, and the scope of the present invention is not limited thereto. The equivalent substitution or change made by the technical personnel in the technical field on the basis of the invention is all within the protection scope of the invention. The protection scope of the invention is subject to the claims.
Claims (10)
1. A preparation method of a conducting circuit is characterized by comprising the following steps:
(1) providing a transfer substrate and an imprint template with a circuit diagram;
(2) coating imprinting glue on the transfer substrate, and then laminating and printing a circuit diagram groove on the imprinting template provided with the circuit diagram on the imprinting glue;
(3) filling a conductive material into the groove of the circuit diagram;
(4) removing the imprinting glue on the transfer substrate to a height lower than the conductive material;
(5) and attaching the conductive material on the transfer substrate to the target substrate, combining the conductive material and the target substrate, and peeling off the transfer substrate to obtain the conductive circuit.
2. The method of claim 1, wherein: the transfer substrate is a flexible substrate, and the imprint template is a flexible template with controllable embossing height.
3. The method of claim 1, wherein: in the step (2), after the imprint template prints the circuit diagram on the imprint glue layer, the imprint template is separated by adopting a UV curing mode under a vacuum condition, and a circuit diagram groove is obtained.
4. The method of claim 1, wherein: in the step (3), the conductive material is one or more of a micro-nano metal conductive material, a micro-nano alloy conductive material and a micro-nano composite metal conductive material.
5. The method of claim 4, wherein: the micro-nano conductive material is one or more of a micro-nano silver conductive material, a micro-nano copper conductive material, a micro-nano gold conductive material, a micro-nano nickel conductive material, a micro-nano aluminum conductive material, a micro-nano silver-coated copper conductive material, a micro-nano silver-coated aluminum conductive material and a micro-nano silver-coated nickel conductive material.
6. The production method according to claim 1 or 4, characterized in that: the conductive material contains an adhesion material.
7. The method of claim 1, wherein: and (4) removing the imprinting glue on the transfer substrate by adopting a plasma etching method.
8. The method of claim 1, wherein: in the step (5), after the conductive material is attached to the target substrate, the conductive material and the target substrate are combined in a heating mode.
9. The method of claim 1, wherein: the step of curing is also included after the conductive material is combined with the target substrate, so that the bonding force between the imprinting glue and the conductive material is weakened, and the transfer substrate is convenient to peel.
10. The conductive line prepared by the preparation method according to any one of claims 1 to 9, wherein: the line width and the line distance of the conductive lines are less than 40 mu m, and the line thickness is 0.5-20 mu m.
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CN202111636372.XA CN114302568A (en) | 2021-12-29 | 2021-12-29 | Preparation method of conductive circuit |
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CN202111636372.XA CN114302568A (en) | 2021-12-29 | 2021-12-29 | Preparation method of conductive circuit |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6374733B1 (en) * | 1998-12-07 | 2002-04-23 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing ceramic substrate |
JP2003283105A (en) * | 2002-03-25 | 2003-10-03 | Taiyo Yuden Co Ltd | Conductive layer forming method |
CN101923279A (en) * | 2009-06-09 | 2010-12-22 | 清华大学 | Nano-imprint template and preparation method thereof |
CN105824190A (en) * | 2016-05-30 | 2016-08-03 | 中国科学院上海高等研究院 | Preparing method for nanoimprint template |
CN109483780A (en) * | 2018-11-14 | 2019-03-19 | 青岛理工大学 | Transfer printing method for microstructure with large height-width ratio |
-
2021
- 2021-12-29 CN CN202111636372.XA patent/CN114302568A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6374733B1 (en) * | 1998-12-07 | 2002-04-23 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing ceramic substrate |
JP2003283105A (en) * | 2002-03-25 | 2003-10-03 | Taiyo Yuden Co Ltd | Conductive layer forming method |
CN101923279A (en) * | 2009-06-09 | 2010-12-22 | 清华大学 | Nano-imprint template and preparation method thereof |
CN105824190A (en) * | 2016-05-30 | 2016-08-03 | 中国科学院上海高等研究院 | Preparing method for nanoimprint template |
CN109483780A (en) * | 2018-11-14 | 2019-03-19 | 青岛理工大学 | Transfer printing method for microstructure with large height-width ratio |
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