CN114300946A - Rare earth doped photon cascade edge-emitting semiconductor laser and preparation method thereof - Google Patents
Rare earth doped photon cascade edge-emitting semiconductor laser and preparation method thereof Download PDFInfo
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Abstract
The invention provides a rare earth doped photon cascade edge-emitting semiconductor laser and a preparation method thereof, relating to the technical field of semiconductor lasers and comprising the following steps: the device comprises a substrate, wherein a semiconductor epitaxial structure is arranged on the substrate, the semiconductor epitaxial structure comprises a rare earth ion doped layer, and two side surfaces of the semiconductor epitaxial structure are respectively provided with a reflecting end surface and an emergent end surface; the semiconductor epitaxial structure forms first wavelength laser under the excitation of injected current, the first wavelength laser oscillates in the semiconductor epitaxial structure, doped rare earth ions are excited to generate energy level transition when passing through the rare earth ion doping layer, and second wavelength laser is generated, oscillates in a laser resonant cavity formed by the reflecting end face and the emitting end face and is output through the emitting end face. According to the invention, rare earth ions are doped in the traditional edge-emitting semiconductor laser, the rare earth ions are used for emitting light in a photon cascade mode, the high-efficiency utilization of energy in the energy level transition process is realized, and the light emitting intensity and the light emitting efficiency of the edge-emitting semiconductor laser are improved.
Description
Technical Field
The invention relates to the technical field of semiconductor lasers, in particular to a rare earth doped photon cascade edge-emitting semiconductor laser and a preparation method thereof.
Background
Edge emission means that the laser emission direction is along the horizontal direction, i.e. perpendicular to the material growth direction. The working principle of the edge-emitting semiconductor laser is as follows: after the device injects current, stimulated amplification is generated in the quantum well active region, and stimulated emission is realized when the gain generated by the stimulated amplification exceeds the loss of the device (including internal loss and cavity surface loss converted from cavity surface light emission). With the development of the fields of industry, military, medical treatment, space communication and the like, the requirements of higher power and higher efficiency are also provided for the edge-emitting semiconductor laser. At present, the traditional P-N junction type edge emitting semiconductor laser has low luminous intensity and luminous efficiency due to the limitation of an electron-hole composite stimulated radiation mechanism, and the average output power is still at a lower level, so that the development and the application of the traditional P-N junction type edge emitting semiconductor laser are limited.
The rare earth ions are protected by the electronic layer of the unfilled shell, so that the rare earth ions have the advantages of stable luminescence property, longer fluorescence lifetime, larger anti-Stokes shift, sharp luminescence peak and the like, and have extremely important influence on the microstructure, the electrical property, the photomagnetic property and the like of the material after being doped into the material as impurities. The rare earth element doped working substance has the characteristics of high doping concentration and high quantum conversion efficiency, can greatly reduce the length of the required working substance, reduce the pumping power and nonlinear effect, and can meet the requirement on high-power laser output.
Disclosure of Invention
Aiming at the problems, the invention provides a rare earth doped photon cascade edge-emitting semiconductor laser and a preparation method thereof, rare earth ions are doped in the traditional edge-emitting semiconductor laser, and the rare earth ion laser light is realized in a photon cascade mode, so that the high-efficiency utilization of energy in the energy level transition process is realized, and the problems of low luminous intensity and luminous efficiency of the traditional edge-emitting semiconductor laser are solved.
To achieve the above object, the present invention provides a rare earth doped photonic cascade edge emitting semiconductor laser, comprising: the device comprises a substrate, wherein a semiconductor epitaxial structure is arranged on the substrate, the semiconductor epitaxial structure comprises a rare earth ion doped layer, and two side surfaces of the semiconductor epitaxial structure are respectively provided with a reflecting end surface and an emergent end surface;
the semiconductor epitaxial structure forms first wavelength laser under the excitation of injected current, the first wavelength laser oscillates in the semiconductor epitaxial structure, doped rare earth ions are excited to generate energy level transition when passing through the rare earth ion doped layer, and second wavelength laser is generated, oscillates in a laser resonant cavity formed by the reflecting end face and the emergent end face and is output through the emergent end face.
As a further improvement of the invention, the semiconductor epitaxial structure is provided with a P-type contact layer, a P-type upper limiting layer, an upper waveguide layer, a quantum well active region, a lower waveguide layer and an N-type lower limiting layer from bottom to top.
As a further improvement of the present invention, the rare earth ion doped layer may be provided in any one of the layers between the P-type upper confinement layer and the N-type lower confinement layer.
As a further improvement of the present invention, the rare earth ion doped layer is preferably provided in the N-type lower confinement layer.
As a further improvement of the invention, the antireflection film is of a double-layer structure, and the antireflection film is of a periodic multilayer structure.
As a further improvement of the invention, the rare earth ion doped layer is formed by means of ion implantation or epitaxial growth.
As a further improvement of the invention, the semiconductor epitaxial structure is cleaved to obtain two cleavage cavity surfaces which are parallel to each other, and the two cleavage cavity surfaces are respectively plated with an antireflection film and an antireflection film to obtain a reflection end surface and an emergent end surface.
As a further improvement of the invention, the rare earth ion doped layer can be doped with one lanthanide rare earth element alone or a plurality of lanthanide rare earth elements in proportion.
As a further improvement of the invention, the bottom of the semiconductor laser is bonded with diamond or other high-thermal conductivity heat dissipation layer.
The invention also provides a preparation method of the rare earth doped photon cascade edge-emitting semiconductor laser, which comprises the following steps:
preparing a semiconductor epitaxial structure on the surface of a substrate;
injecting rare earth ions into the semiconductor epitaxial structure or epitaxially growing a rare earth ion doped layer;
manufacturing a table top on the surface of the semiconductor epitaxial structure;
preparing an insulating passivation layer on the outer surface of the semiconductor epitaxial structure;
manufacturing a metal P electrode and a metal N electrode in the semiconductor epitaxial structure;
and cleaving two sides of the semiconductor epitaxial structure to obtain two parallel cleavage cavity surfaces, and respectively plating an antireflection film and an antireflection film to obtain the semiconductor laser.
Compared with the prior art, the invention has the beneficial effects that:
the invention breaks through an electron-hole composite stimulated radiation mechanism of the traditional P-N junction type edge-emitting semiconductor laser, realizes a new photon cascade type light-emitting system with an interaction of the electron-hole composite stimulated radiation mechanism and a particle energy level system transition radiation mechanism by doping rare earth ions in the material of the traditional semiconductor laser, realizes the conversion from low-energy photons to high-energy photons by doping the rare earth ions, solves the problems of low light-emitting intensity and light-emitting efficiency of the traditional edge-emitting semiconductor laser, thereby realizing the high-efficiency utilization of energy in the energy level transition process, improving the light-emitting efficiency and realizing the output of narrow linewidth laser.
Drawings
FIG. 1 is a schematic diagram of a rare earth doped photonic cascade edge emitting semiconductor laser according to an embodiment of the present invention;
FIG. 2 is a flow chart of a rare earth doped photonic cascade edge-emitting semiconductor laser according to an embodiment of the present invention;
fig. 3 is a schematic view illustrating a process for fabricating a first edge-emitting semiconductor laser according to an embodiment of the present invention;
fig. 4 is a schematic view of a second fabrication process of an edge-emitting semiconductor laser according to an embodiment of the present invention.
Description of reference numerals:
1. a P-type contact layer; 2. a P-type upper confinement layer; 3. an upper waveguide layer; 4. a quantum well active region; 5. a lower waveguide layer; 6. doping rare earth ions; 7. an N-type lower confinement layer; 8. a substrate; 9. a passivation layer; 10. an anti-reflection film; 11. an anti-reflection film; 12. a P electrode; 13. and an N electrode.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
The invention is described in further detail below with reference to the attached drawing figures:
as shown in fig. 1, the rare earth doped photonic cascade edge emitting semiconductor laser provided by the invention comprises: the semiconductor epitaxial structure is arranged on the upper side surface of the substrate 8, and the semiconductor epitaxial structure is provided with a P-type contact layer 1, a P-type upper limiting layer 2, an upper waveguide layer 3, a quantum well active region 4, a lower waveguide layer 5 and an N-type lower limiting layer 7 from bottom to top; wherein, the quantum well active region 4 is a multi-quantum well structure; a rare earth ion doping layer 6 is arranged in the semiconductor epitaxial structure, and the rare earth ion doping layer 6 can be doped in any layer between the P-type upper limiting layer 2 and the N-type lower limiting layer 7, preferably arranged in the N-type lower limiting layer 7 below the quantum well active region 4; the left side surface and the right side surface which are vertical to the main extension plane of the semiconductor epitaxial structure are respectively provided with a reflecting end surface and an emergent end surface;
the semiconductor epitaxial structure forms first wavelength laser under the excitation of injected current, the first wavelength laser oscillates in the semiconductor epitaxial structure, doped rare earth ions are excited to generate energy level transition when passing through the rare earth ion doping layer, and second wavelength laser is generated, oscillates in a laser resonant cavity formed by the reflecting end face and the emitting end face and is output through the emitting end face.
Wherein the content of the first and second substances,
the rare earth ion doping layer 6 can be formed by growing on the N-type lower limiting layer 7 in an ion implantation or epitaxial growth mode, and the rare earth ion doping layer 6 can be singly doped with one lanthanide rare earth element or doped with a plurality of lanthanide rare earth elements in proportion;
the method comprises the steps of cleaving the left side surface and the right side surface perpendicular to the main extension surface of the semiconductor epitaxial structure to obtain two parallel cleavage cavity surfaces, plating an antireflection film 11 and an antireflection film 10 on the two cleavage cavity surfaces respectively to obtain a reflection end surface and an exit end surface, and forming a laser resonant cavity of laser with a second wavelength between the reflection end surface and the exit end surface.
The bottom of the semiconductor laser is bonded with diamond or other heat dissipation layers with high thermal conductivity.
The invention also provides a preparation method of the rare earth doped photon cascade edge-emitting semiconductor laser, which comprises the following steps:
s1, preparing a semiconductor epitaxial structure on the surface of the substrate 8;
in particular, the method comprises the following steps of,
epitaxially growing a laser epitaxial material on the GaAs substrate 8 by using MOCVD or MBE technology; meanwhile, the prepared epitaxial structure can be a narrow waveguide epitaxial structure facing a medium-small power laser or a wide waveguide epitaxial structure facing a high-power laser, and the upper and lower waveguide layers 5 in the epitaxial structure can be of a symmetrical structure or an asymmetrical waveguide structure.
S2, injecting rare earth ions into the semiconductor epitaxial structure or epitaxially growing a rare earth ion doping layer 6;
s3, manufacturing a table top on the semiconductor epitaxial structure;
in particular, the method comprises the following steps of,
exposing a semiconductor epitaxial structure by utilizing a photoetching technology to form a table top pattern, etching the table top by utilizing a dry etching technology to ensure that the side wall of the table top is vertical and steep, and then further modifying the edge of the table top by utilizing a wet etching technology to ensure that the side wall of the table top is smooth and the loss of light on the side wall of the table top is reduced;
s4, preparing an insulating passivation layer 9 on the outer surface of the semiconductor epitaxial structure;
in particular, the method comprises the following steps of,
preparing a passivation layer 9 by utilizing a PECVD (plasma enhanced chemical vapor deposition) process, and depositing a silicon nitride antireflection film on the outer surface of the semiconductor epitaxial structure to increase the transmission of light incident on a silicon wafer and reduce reflection; the doping of hydrogen atoms into silicon nitride adds a passivating effect of hydrogen. The insulating passivation layer 9 covers the whole surface of the epitaxial wafer, only the surface of the upper table top is provided with an opening for preparing a P-surface electrode, and the area of the opening is smaller than that of the table top
S5, manufacturing a metal P electrode 12 and a metal N electrode 13 on the table board;
in particular, the method comprises the following steps of,
the method comprises the steps of coating L300 negative photoresist on a semiconductor epitaxial wafer to be processed, photoetching and developing by using a double-sided overlay process to manufacture a pattern of a metal P electrode 12, cleaning the residual photoresist, and growing a metal material of the P electrode 12 by using a metal process such as magnetron sputtering. The P-face electrode is aligned with the table top, and the area of the P-face electrode is smaller than that of the table top; the prepared N-surface electrode is aligned with the N surface of the chip, the area of the N-surface electrode is smaller than that of the N surface of the chip, and a scribing groove is reserved, so that the scribing process is facilitated.
The method comprises the steps of coating SU-8 negative photoresist on a semiconductor epitaxial wafer to be processed, manufacturing an N electrode 13 graph through photoetching and developing, cleaning residual photoresist, and growing an N electrode metal material through metal processes such as magnetron sputtering technology sputtering.
And S6, performing cleavage on the two sides of the semiconductor epitaxial structure and the substrate 8 to obtain two parallel cleavage cavity surfaces, and respectively plating the antireflection film 11 and the antireflection film 10 to obtain the semiconductor laser.
The antireflection film 10 has a double-layer structure, and the antireflection film 11 has a periodic multilayer structure.
S7, laser scribing. The semiconductor epitaxial structure is diced in high vacuum to form a single-tube chip or an array chip, and then a cavity surface passivation layer 9 is evaporated in the same high vacuum to prevent the cavity surface of the semiconductor laser from being oxidized.
And S8, cleavage and packaging. And (3) cleaving the manufactured chip by using a cleaving dicing saw, completing welding with an electrode of an external power supply system by adopting a mode of thermocompression bonding and the like, and completing chip packaging.
Example 1:
as shown in fig. 2 and 3, the process of manufacturing the edge-emitting semiconductor laser includes:
And sequentially epitaxially growing an N-type lower limiting layer 7, a lower waveguide layer 5, a semiconductor quantum well layer, an upper waveguide layer 3, a P-type upper limiting layer 2 and a P-type contact layer 1 on the surface of the GaAs substrate 8 by adopting an MOCVD method.
After the epitaxial wafer is cleaned, the epitaxial wafer is blown and dried by high-purity nitrogen protection, and is heated and dried, and the PECVD technology is adopted to deposit 500nmSiO2And as an implantation mask, spin-coating thick glue on the non-implantation region, then placing the epitaxial wafer into an ion implanter for ion implantation, and implanting required rare earth ions into the region of the N-type lower limiting layer 7 to form the rare earth ion doped layer 6.
Step 3, manufacturing the table top
Firstly, a mesa structure is manufactured on an epitaxial wafer to be processed by adopting a dry etching method. Etching of Cl2/BCl3The gas flow ratio is 1: and 3, etching with the power of 500W to expose the oxide layer. Secondly, etching off redundant SiO on the chip by adopting a wet method2And cleaning the chip. And finally, after cleaning, drying the epitaxial wafer to be processed by using high-purity nitrogen, and after ensuring cleanness, heating and drying the wafer for later use.
Step 4, manufacturing a passivation layer 9
Preparing a passivation layer 9 by utilizing a PECVD (plasma enhanced chemical vapor deposition) process, and depositing a layer of silicon nitride antireflection film on the surface of the silicon wafer to increase the transmission of light incident on the silicon wafer and reduce reflection; the doping of hydrogen atoms into silicon nitride adds a passivating effect of hydrogen. The insulating passivation layer 9 covers the whole surface of the epitaxial wafer, only an opening is reserved on the surface of the upper table top and used for preparing a P-surface electrode, and the area of the opening is smaller than that of the table top.
And coating SU-8 negative photoresist on an epitaxial wafer to be processed, manufacturing an N electrode pattern by photoetching and developing, cleaning residual photoresist, and growing an N electrode 13 metal material by magnetron sputtering and other metal processes.
And (3) placing the epitaxial wafer on which the N electrode metal grows in an acetone solution, heating the epitaxial wafer in a water bath for 10min, then carrying out a metal stripping process, stripping the metal of the non-N electrode 13, and manufacturing the metal N electrode 13.
An L300 negative photoresist is coated on an epitaxial wafer to be processed, a pattern of the metal P electrode 12 is manufactured by photoetching and developing through a double-sided overlay process, the residual photoresist is cleaned, and then a P electrode 12 metal material is grown through metal processes such as magnetron sputtering and the like.
And (3) soaking the epitaxial wafer with the grown metal of the P electrode 12 in an acetone solution for 4-5h, then carrying out a metal stripping process to strip the metal of the non-P electrode 12, and finishing the manufacture of the P electrode 12.
The reflection reducing film 10 and the reflection increasing film 11 are respectively plated in the front cavity and the rear cavity, the structures of the two cavities are different, the reflection reducing film 10 is of a double-layer structure, and the reflection increasing film 11 is of a periodic multi-layer structure.
Scribing in high vacuum to form single tube chip or array chip, and evaporating the cavity surface passivation layer 9 in the same high vacuum to prevent the laser cavity surface from being oxidized.
And (3) cleaving the manufactured chip by using a cleaving dicing saw, completing welding with an electrode of an external power supply system by adopting a mode of thermocompression bonding and the like, and completing chip packaging.
Example 2:
as shown in fig. 2 and 4, the process of manufacturing the edge-emitting semiconductor laser includes:
An N-type lower confinement layer 7 is epitaxially grown on the surface of the GaAs substrate 8.
And continuously epitaxially growing a rare earth ion doping layer 6, an N-type waveguide layer, a semiconductor quantum well layer, a P-type waveguide layer and a P-type limiting layer on the N-type lower limiting layer 7. And cleaning the epitaxial structure, blowing the chip to be dried by high-purity nitrogen protection, and heating and drying the epitaxial wafer to be processed after ensuring cleanness for later use.
Step 3, manufacturing the table top
Firstly, a mesa structure is manufactured on an epitaxial wafer to be processed by adopting a dry etching and wet etching method. First, Cl is etched by an etching method2/BCl3The gas flow ratio is 1: and 3, etching with the power of 500W to expose the oxide layer. Secondly, etching off redundant SiO on the chip by adopting a wet method2And cleaning the chip. And finally, after cleaning, drying the epitaxial wafer to be processed by using high-purity nitrogen, and after ensuring cleanness, heating and drying the wafer for later use.
Step 4, manufacturing a passivation layer 9
Preparing a passivation layer 9 by using a PECVD process: depositing a layer of silicon nitride antireflection film on the surface of the silicon wafer to increase the transmission of light incident on the silicon wafer and reduce reflection; the doping of hydrogen atoms into silicon nitride adds a passivating effect of hydrogen. The insulating passivation layer 9 covers the whole surface of the epitaxial wafer, only an opening is reserved on the surface of the upper table top and used for preparing a P-surface electrode, and the area of the opening is smaller than that of the table top.
An epitaxial wafer to be processed is coated with SU-8 negative photoresist, an N electrode pattern is manufactured through photoetching and developing, residual photoresist is cleaned, and then a metal material of an N electrode 13 is grown through metal processes such as magnetron sputtering technology sputtering and the like.
And (3) placing the epitaxial wafer on which the metal of the N electrode 13 is grown in an acetone solution, heating the epitaxial wafer in a water bath for 10min, and then carrying out a metal stripping process to strip the metal of the non-N electrode 13 so as to finish the manufacture of the N electrode 13.
An epitaxial wafer to be processed is coated with L300 negative photoresist, a double-sided overlay process is applied to carry out photoetching and developing to manufacture a graph of the metal P electrode 12, the residual photoresist is cleaned, and then metal materials of the P electrode 12 are grown through metal processes such as magnetron sputtering and the like.
And (3) soaking the epitaxial wafer on which the metal of the P electrode 12 is grown in an acetone solution for 4-5 hours, and then carrying out a metal stripping process to strip the metal of the non-P electrode 12, thereby completing the manufacture of the P electrode 12.
The reflection reducing coating is divided into a front cavity and a rear cavity which are respectively plated with a reflection reducing coating 10 and a reflection increasing coating 11, the structures of the reflection reducing coating and the reflection increasing coating are different, the reflection reducing coating 10 is of a double-layer structure, and the reflection increasing coating 11 is of a periodic multi-layer structure.
Scribing in high vacuum to form single tube chip or array chip, and evaporating the cavity surface passivation layer 9 in the same high vacuum to prevent the laser cavity surface from being oxidized.
And (3) cleaving the manufactured chip by using a cleaving dicing saw, completing welding with an electrode of an external power supply system by adopting a mode of thermocompression bonding and the like, and completing chip packaging.
The invention has the advantages that:
the invention breaks through an electron-hole composite stimulated radiation mechanism of the traditional P-N junction type edge-emitting semiconductor laser, realizes a new photon cascade type light-emitting system with an interaction of the electron-hole composite stimulated radiation mechanism and a particle energy level system transition radiation mechanism by doping rare earth ions in the material of the traditional semiconductor laser, realizes the conversion from low-energy photons to high-energy photons by doping the rare earth ions, solves the problems of low light-emitting intensity and light-emitting efficiency of the traditional edge-emitting semiconductor laser, thereby realizing the high-efficiency utilization of energy in the energy level transition process, improving the light-emitting efficiency and realizing the output of narrow linewidth laser.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes will occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A rare earth doped photonic cascade edge emitting semiconductor laser comprising: the device comprises a substrate, wherein a semiconductor epitaxial structure is arranged on the substrate, the semiconductor epitaxial structure comprises a rare earth ion doped layer, and two side surfaces of the semiconductor epitaxial structure are respectively provided with a reflecting end surface and an emergent end surface;
the semiconductor epitaxial structure forms first wavelength laser under the excitation of injected current, the first wavelength laser oscillates in the semiconductor epitaxial structure, doped rare earth ions are excited to generate energy level transition when passing through the rare earth ion doped layer, and second wavelength laser is generated, oscillates in a laser resonant cavity formed by the reflecting end face and the emergent end face and is output through the emergent end face.
2. A semiconductor laser as claimed in claim 1 wherein: the semiconductor epitaxial structure is provided with a P-type contact layer, a P-type upper limiting layer, an upper waveguide layer, a quantum well active region, a lower waveguide layer and an N-type lower limiting layer from bottom to top.
3. A semiconductor laser as claimed in claim 2 wherein: the rare earth ion doped layer may be provided in any one of the layers between the P-type upper confinement layer and the N-type lower confinement layer.
4. A semiconductor laser as claimed in claim 2 wherein: the rare earth ion doped layer is preferably arranged in the N-type lower limiting layer.
5. A semiconductor laser as claimed in claim 1 wherein: and forming the rare earth ion doped layer by means of ion implantation or epitaxial growth.
6. A semiconductor laser as claimed in claim 1 wherein: and cleaving the semiconductor epitaxial structure to obtain two parallel cleavage cavity surfaces, and plating an antireflection film and an antireflection film on the two cleavage cavity surfaces respectively to obtain a reflecting end surface and an emergent end surface.
7. A semiconductor laser as claimed in claim 6 wherein: the antireflection film is of a double-layer structure, and the antireflection film is of a periodic multilayer structure.
8. A semiconductor laser as claimed in claim 1 wherein: the rare earth ion doped layer can be singly doped with one lanthanide rare earth element or doped with a plurality of lanthanide rare earth elements according to the proportion.
9. A semiconductor laser as claimed in claim 1 wherein: and diamond or other heat dissipation layers with high heat conductivity coefficients are bonded at the bottoms of the semiconductor lasers.
10. A method of fabricating a semiconductor laser as claimed in any of claims 1 to 9 comprising the steps of:
preparing a semiconductor epitaxial structure on the surface of a substrate;
injecting rare earth ions into the semiconductor epitaxial structure or epitaxially growing a rare earth ion doped layer;
manufacturing a table top on the surface of the semiconductor epitaxial structure;
preparing an insulating passivation layer on the outer surface of the semiconductor epitaxial structure;
manufacturing a metal P electrode and a metal N electrode in the semiconductor epitaxial structure;
and cleaving two sides of the semiconductor epitaxial structure to obtain two parallel cleavage cavity surfaces, and respectively plating an antireflection film and an antireflection film to obtain the semiconductor laser.
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| US4737960A (en) * | 1986-09-26 | 1988-04-12 | American Telephone And Telegraph Company, At&T Bell Laboratories | Rare earth doped semiconductor laser |
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