CN114300940A - Rare earth doped VCSEL external cavity feedback coherent array laser and preparation method thereof - Google Patents
Rare earth doped VCSEL external cavity feedback coherent array laser and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a rare earth doped VCSEL external cavity feedback coherent array laser and a preparation method thereof, wherein the laser comprises a substrate and a VCSEL chip epitaxial structure with a rare earth element doped layer, which is prepared on the substrate, wherein in the VCSEL chip epitaxial structure, a first laser resonant cavity and a second laser resonant cavity form a photon cascade composite cavity, the first laser resonant cavity generates laser with a first wavelength, and the laser with the first wavelength is used as pump light in the second laser resonant cavity; the rare earth element ions doped in the rare earth element doped layer in the second laser resonant cavity generate second wavelength fluorescence under the excitation of the first wavelength laser; and the second wavelength fluorescence enters the third laser resonant external cavity and then enters the second laser resonant cavity to form external cavity mutual injection feedback, and the third laser resonant external cavity outputs coherent array second wavelength laser. By the technical scheme, the coherent array laser with narrow line width and high beam quality is output, the light emitting efficiency is improved, and the laser beam quality is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor lasers, in particular to a rare earth doped VCSEL external cavity feedback coherent array laser and a preparation method of the rare earth doped VCSEL external cavity feedback coherent array laser.
Background
Compared with edge-emitting semiconductor lasers, Vertical Cavity Surface Emitting Lasers (VCSELs) have the advantages of good monochromaticity, single longitudinal mode lasing, low threshold current, low power consumption, easiness in two-dimensional integration, circular light spots, easiness in coupling with optical fibers, on-chip detection, low cost and the like, and are widely applied to the fields of laser printing, 3D sensing, optical communication, optical storage and the like. At present, due to the limitation of an electron-hole composite stimulated radiation mechanism and the undetermined phase relationship, the traditional P-N junction array VCSEL laser generally has the problems of low luminous intensity and luminous efficiency, poor far-field distribution space characteristics, very dispersed energy distribution, poor beam quality, high-order mode mostly in a transverse mode and the like, so that the development and application of the traditional P-N junction array VCSEL laser are limited.
The rare earth ions are protected by the electronic layer of the unfilled shell, so that the rare earth ions have the advantages of stable luminescence property, longer fluorescence lifetime, larger anti-Stokes shift, sharp luminescence peak and the like. Rare earth ions are active ions in a plurality of laser materials, diluted magnetic semiconductor materials, nonlinear optical materials and nano luminescent materials, and have extremely important influence on the microstructure, the electrical property, the photomagnetic property and the like of the materials after being doped into the materials as impurities.
The external cavity phase lock is to adopt a certain device or device outside the VCSEL chip, so that a certain fixed relation is established between the phases of the emergent light of each light-emitting unit of the VCSEL chip, the phase lock operation is realized, and the beam quality of the device is improved.
Disclosure of Invention
Aiming at the problems, the invention provides a rare earth doped VCSEL external cavity feedback coherent array laser and a preparation method thereof, a new photon cascade type luminescence system with an interaction of an electron-hole composite stimulated radiation mechanism and a particle energy level system transition radiation mechanism is realized by doping required rare earth elements in the material of the traditional semiconductor laser, the conversion from low-energy photons to high-energy photons can be realized by the rare earth ion doped up-conversion material, the problems of low luminous intensity and low luminous efficiency of the traditional VCSEL laser are solved, the efficient utilization of energy in the energy level transition process is realized, and the luminous efficiency is improved; the phase relation determined among the light-emitting units is established by adding the optical resonance external cavity, the laser beam quality is improved, the problems of poor far-field distribution space characteristic, very dispersed energy distribution, poor beam quality and the like of the traditional array semiconductor laser are solved, and finally the coherent array laser with narrow line width and high beam quality is output.
In order to achieve the above object, the present invention provides a rare earth doped VCSEL external cavity feedback coherent array laser, comprising a substrate and a VCSEL chip epitaxial structure with a rare earth element doped layer prepared on the substrate, wherein the VCSEL chip epitaxial structure comprises a first laser resonant cavity, a second laser resonant cavity and a third laser resonant external cavity;
the first laser resonant cavity and the second laser resonant cavity form a photon cascade composite cavity, the first laser resonant cavity can generate first wavelength laser under current excitation, and the first wavelength laser is used as pump light in the second laser resonant cavity;
the second laser resonant cavity comprises the rare earth element doped layer, and rare earth element ions doped in the rare earth element doped layer generate second wavelength fluorescence under the excitation of the laser with the first wavelength;
and the second wavelength fluorescence enters the third laser resonant external cavity from the second laser resonant cavity and then enters the second laser resonant cavity to form external cavity mutual injection feedback, and the third laser resonant external cavity outputs coherent array second wavelength laser.
In the above technical solution, preferably, the VCSEL chip epitaxial structure includes an N-type DBR layer, an N-type total reflection DBR layer, an N-type waveguide layer, a rare earth element doping layer, a semiconductor multiple quantum well layer, a P-type waveguide layer, an oxide layer, a P-type total reflection DBR layer, and a P-type DBR layer, which are sequentially extended from the substrate upward, and an optical mode loss layer and a semi-reflective and semi-transparent layer at the bottom of the substrate.
In the above technical solution, preferably, the N-type total reflection DBR layer, the N-type waveguide layer, the semiconductor multiple quantum well layer, the P-type waveguide layer, and the P-type total reflection DBR layer constitute the first laser resonant cavity;
the N-type DBR layer, the rare earth element doped layer, the oxide layer and the P-type DBR layer form the second laser resonant cavity;
the substrate, the optical mode loss layer and the semi-reflecting and semi-transmitting layer form the third laser resonant external cavity.
In the above technical solution, preferably, a laser generation mechanism of the first laser resonant cavity is electroluminescence, and under excitation of an injected current, electrons and holes recombine to radiate a large number of photons to form the first wavelength laser between energy bands;
and the N-type total reflection DBR layer and the P-type total reflection DBR layer totally reflect the laser with the first wavelength.
In the above technical solution, preferably, a laser generation mechanism of the second laser resonator is photoluminescence, and particle level transition of rare earth element ions doped in the rare earth element doped layer generates fluorescence of a second wavelength under excitation of the laser of the first wavelength;
in the second laser resonant cavity, the N-type DBR layer is a total reflection layer, the P-type DBR layer is a semi-reflection and semi-transmission layer, or the N-type DBR layer is a semi-reflection and semi-transmission layer, and the P-type DBR layer is a total reflection layer;
the total reflection layer totally reflects the second wavelength fluorescence, and the reflectivity of the semi-reflecting and semi-transmitting layer to the second wavelength fluorescence is 50% -90%;
and the second wavelength fluorescence enters the third laser resonant external cavity after passing through the semi-reflecting and semi-transmitting layer in the second laser resonant cavity, and then enters the second laser resonant cavity after passing through the semi-reflecting and semi-transmitting layer of the third laser resonant external cavity to form external cavity mutual injection feedback.
In the above technical solution, preferably, the rare earth element doped layer is doped with lanthanide ions, and the doping type is one element doped alone or multiple elements doped in a certain proportion;
the doping method of the rare earth element doping layer comprises ion implantation doping, epitaxial growth doping and ion solution doping.
In the above technical solution, preferably, the epitaxial growth doping manner of the rare earth element doping layer is a GaAs layer and XyAszThe layers are grown alternately, wherein X is one of the lanthanides.
In the above technical solution, preferably, the optical mode loss layer is made of an infrared-transmitting optical material with a certain concave-convex structure, and is located inside the semi-reflective and semi-transparent layer in the third laser resonator;
the second wavelength fluorescence can lose a high-order mode through the optical mode loss layer, so that light in a low-order mode enters the second laser resonant cavity to form oscillation.
In the above technical solution, preferably, the reflectivity of the transflective layer to the fluorescence with the second wavelength is 50% to 90%.
The invention also provides a preparation method of the rare earth doped VCSEL external cavity feedback coherent array laser, which comprises the following steps:
sequentially carrying out epitaxial growth on the surface of the substrate to prepare a VCSEL chip epitaxial structure, wherein the rare earth element doped layer is formed in a rare earth ion injection, epitaxial growth or ion solution doping mode;
manufacturing a mesa structure on the VCSEL chip epitaxial structure;
manufacturing an oxidation hole on an oxidation layer in the VCSEL chip epitaxial structure;
photoetching the surface of the VCSEL chip epitaxial structure and then manufacturing a metal N electrode;
stripping the metal of the non-N electrode;
photoetching the surface of the VCSEL chip epitaxial structure and then manufacturing a metal P electrode;
stripping the metal of the non-P electrode;
preparing an optical resonance external cavity on the other surface of the substrate;
and carrying out cleavage and packaging on the manufactured chip.
Compared with the prior art, the invention has the beneficial effects that: by breaking an electron-hole composite stimulated radiation mechanism of a traditional P-N junction type VCSEL laser and doping required rare earth elements in a traditional semiconductor laser material, a new photon cascade type light-emitting system with an interaction of the electron-hole composite stimulated radiation mechanism and a particle energy level system transition radiation mechanism is realized, conversion from low-energy photons to high-energy photons can be realized through an up-conversion material doped with rare earth ions, the problems of low light-emitting intensity and low light-emitting efficiency of the traditional VCSEL laser are solved, and therefore efficient utilization of energy in the energy level transition process is realized, and the light-emitting efficiency is improved; the phase relation determined among the light-emitting units is established by adding the optical resonance external cavity, the laser beam quality is improved, the problems of poor far-field distribution space characteristic, very dispersed energy distribution, poor beam quality and the like of the traditional array semiconductor laser are solved, and finally the coherent array laser with narrow line width and high beam quality is output.
Drawings
Fig. 1 is a schematic view of an epitaxial structure of a rare-earth doped VCSEL external cavity feedback coherent array laser according to an embodiment of the present invention;
FIG. 2 is a flow chart of a method for fabricating a rare-earth doped VCSEL external cavity feedback coherent array laser according to an embodiment of the present invention;
FIG. 3 is a flow chart illustrating the structure and fabrication of a rare-earth doped VCSEL external cavity feedback coherent array laser fabricated by ion implantation according to an embodiment of the present invention;
FIG. 4 is a flow chart illustrating the structure and fabrication of a rare-earth doped VCSEL external cavity feedback coherent array laser fabricated by epitaxial growth techniques according to an embodiment of the present invention;
fig. 5 is a structure and a flow chart of a rare earth doped VCSEL external cavity feedback coherent array laser fabricated by an ion solution doping technique according to an embodiment of the present invention.
In the drawings, the correspondence between each component and the reference numeral is:
1. a P-type DBR layer; 2. a P-type total reflection DBR layer; 3. an oxide layer; 4. a P-type waveguide layer; 5. a semiconductor multi-quantum well layer; 6. an N-type waveguide layer; 7. doping a rare earth element layer; 8. an N-type total reflection DBR layer; 9. an N-type DBR layer; 10. a substrate layer; 11. an optical mode loss layer; 12. a semi-reflecting and semi-permeable layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
The invention is described in further detail below with reference to the attached drawing figures:
as shown in fig. 1, the rare earth doped VCSEL external cavity feedback coherent array laser provided by the present invention includes a substrate and a VCSEL chip epitaxial structure with a rare earth element doped layer 7 prepared on the substrate, wherein the VCSEL chip epitaxial structure includes a first laser resonant cavity, a second laser resonant cavity, and a third laser resonant external cavity;
the first laser resonant cavity and the second laser resonant cavity form a photon cascade composite cavity, the first laser resonant cavity can generate first wavelength laser under the excitation of current, and the first wavelength laser is used as pump light in the second laser resonant cavity;
the second laser resonant cavity comprises a rare earth element doping layer 7, and rare earth element ions doped in the rare earth element doping layer 7 generate second wavelength fluorescence under the excitation of the first wavelength laser;
and the second wavelength fluorescence enters a third laser resonant outer cavity from the second laser resonant cavity and then enters the second laser resonant cavity to form outer cavity mutual injection feedback, and coherent array second wavelength laser is output by the third laser resonant outer cavity.
In the embodiment, by breaking an electron-hole composite stimulated radiation mechanism of a traditional P-N junction type VCSEL, doping required rare earth elements in a traditional semiconductor laser material, a new photon cascade type light-emitting system with an interaction of the electron-hole composite stimulated radiation mechanism and a particle energy level system transition radiation mechanism is realized, conversion from low-energy photons to high-energy photons can be realized through an up-conversion material doped with rare earth ions, the problems of low light-emitting intensity and low light-emitting efficiency of the traditional VCSEL are solved, and therefore efficient utilization of energy in the energy level transition process is realized, and the light-emitting efficiency is improved; the phase relation determined among the light-emitting units is established by adding the optical resonance external cavity, the laser beam quality is improved, the problems of poor far-field distribution space characteristic, very dispersed energy distribution, poor beam quality and the like of the traditional array semiconductor laser are solved, and finally the coherent array laser with narrow line width and high beam quality is output.
Specifically, in the above embodiment, preferably, the VCSEL chip epitaxial structure includes an N-type DBR layer 9, an N-type total reflection DBR layer 8, an N-type waveguide layer 6, a rare earth element doping layer 7, a semiconductor multiple quantum well layer 5, a P-type waveguide layer 4, an oxide layer 3, a P-type total reflection DBR layer 2, and a P-type DBR layer 1, which are sequentially extended from the substrate upward, and an optical mode loss layer 11 and a semi-reflective and semi-transparent layer 12 at the bottom of the substrate.
In the above embodiment, preferably, the N-type total reflection DBR layer 8, the N-type waveguide layer 6, the semiconductor multiple quantum well layer 5, the P-type waveguide layer 4, and the P-type total reflection DBR layer 2 constitute a first laser resonator;
the N-type DBR layer 9, the rare earth element doping layer 7, the oxidation layer 3 and the P-type DBR layer 1 form a second laser resonant cavity;
the substrate, the optical mode loss layer 11 and the semi-reflecting and semi-transmitting layer 12 form a third laser resonant external cavity.
Wherein, preferably, the laser generation mechanism of the first laser resonant cavity is electroluminescence, and under the excitation of the injected current, the electrons and the holes recombine to radiate a large number of photons to form first wavelength laser between energy bands;
the N-type total reflection DBR layer 8 and the P-type total reflection DBR layer 2 can realize total reflection of the laser light of the first wavelength.
In the above embodiment, preferably, the laser generation mechanism of the second laser resonator is photoluminescence, the laser with the first wavelength is used as the pump light of the second laser resonator, and the particle level transition of the rare earth element ions doped in the rare earth element doping layer 7 generates fluorescence with the second wavelength under the excitation of the laser with the first wavelength;
in the second laser resonant cavity, one of the N-type DBR layer 9 and the P-type DBR layer 1 is a total reflection layer, and the other is a semi-reflective and semi-transparent layer, specifically, the N-type DBR layer 9 is a total reflection layer, the P-type DBR layer 1 is a semi-reflective and semi-transparent layer, or the N-type DBR layer 9 is a semi-reflective and semi-transparent layer, and the P-type DBR layer 1 is a total reflection layer;
the total reflection layer can realize total reflection on the second wavelength fluorescence, and the reflectivity of the semi-reflecting and semi-transmitting layer on the second wavelength fluorescence is 50% -90%.
The second wavelength fluorescence enters the third laser resonant outer cavity after passing through the semi-reflecting and semi-transparent layer in the second laser resonant outer cavity, and then enters the second laser resonant outer cavity after passing through the semi-reflecting and semi-transparent layer 12 of the third laser resonant outer cavity to form outer cavity mutual injection feedback, so that coherent array second wavelength laser with high beam quality is finally output by the third laser resonant outer cavity.
In the above embodiment, preferably, the rare earth element doped layer 7 is doped with lanthanide ions, and the doping species is one element or a plurality of elements in a certain proportion;
the doping method of the rare earth element doping layer 7 includes ion implantation doping, epitaxial growth doping, and ion solution doping.
In the above embodiment, preferably, the rare earth element doped layer 7 is doped by epitaxial growth in such a manner that GaAs layers and XyAsz layers are alternately grown, where X is one of lanthanoid elements.
In the above-described embodiment, it is preferable that the rare-earth element doped layer 7 is located on the upper layer of the active region or the lower layer of the active region of the first laser resonator.
In the above embodiment, the optical mode loss layer 11 is preferably made of an infrared transmitting optical material with a certain concave-convex structure, such as SiO2 or Si3N4, and the optical mode loss layer 11 is located inside the semi-reflecting and semi-transparent layer 12 in the third laser cavity;
the second wavelength fluorescence can be used for losing the high-order mode through the optical mode loss layer 11, so that the light of the low-order mode enters the second laser resonant cavity to form oscillation.
In the above embodiment, the reflectivity of the transflective layer 12 for the fluorescence of the second wavelength is preferably 50% to 90%.
As shown in fig. 2, the present invention further provides a method for preparing a rare earth doped VCSEL external cavity feedback coherent array laser as disclosed in any of the above embodiments, comprising:
sequentially carrying out epitaxial growth on the surface of the substrate to prepare a VCSEL chip epitaxial structure, wherein the rare earth element doping layer 7 is formed in a rare earth ion injection, epitaxial growth or ion solution doping mode;
manufacturing a mesa structure on the VCSEL chip epitaxial structure;
manufacturing an oxidation hole on an oxidation layer 3 in the VCSEL chip epitaxial structure;
photoetching the surface of the VCSEL chip epitaxial structure and then manufacturing a metal N electrode;
stripping the metal of the non-N electrode;
photoetching the surface of the VCSEL chip epitaxial structure and then manufacturing a metal P electrode;
stripping the metal of the non-P electrode;
preparing an optical resonance external cavity on the other surface of the substrate;
and carrying out cleavage and packaging on the manufactured chip.
According to the method for preparing the rare earth doped VCSEL external cavity feedback coherent array laser disclosed by the embodiment, based on three different rare earth element doping modes of rare earth ion injection, epitaxial growth and ion solution doping, the method for preparing the coherent array laser under the three modes is specifically described below.
Example 1:
as shown in fig. 3, the present invention provides a method for preparing a bottom-emitting rare-earth-doped VCSEL external cavity feedback coherent array laser, comprising:
step one, growing an epitaxial structure
The method comprises the following steps of sequentially and epitaxially growing an N-type DBR layer 9 (a semi-reflecting and semi-permeable layer), an N-type total reflection DBR layer 8, an N-type waveguide layer 6, a rare earth ion doping layer, a semiconductor multi-quantum well layer 5, a P-type waveguide layer 4, an oxidation layer 3, a P-type total reflection DBR layer 2 and a P-type DBR layer 1 (a total reflection layer) on the surface of a GaAs substrate;
step two, rare earth ion implantation
And after the epitaxial wafer is cleaned, the epitaxial wafer is blown dry by high-purity nitrogen protection and is heated and dried, and SiO2 or Si3N4 with a certain thickness is deposited by PECVD to protect the surface of the epitaxial wafer from being damaged by ion implantation. Selecting proper implantation energy and dosage to place the epitaxial wafer into an ion implanter to complete implantation, and forming a rare earth ion doped layer in the upper region of the N-type waveguide layer 6;
step three, manufacturing the table top
Firstly, a mesa structure is manufactured on an epitaxial wafer to be processed by adopting methods such as wet etching or dry etching. If an etching method is adopted, the gas flow ratio of etching Cl2/BCl3 is 1: and 3, etching with the power of 500W to expose the oxide layer 3. And secondly, etching off the redundant SiO2 on the chip by a wet method, and cleaning the chip. Finally, after cleaning, drying the epitaxial wafer to be processed by using high-purity nitrogen, and after ensuring cleanness, heating and drying the wafer for later use;
fourthly, manufacturing an oxidation hole
And oxidizing the oxide layer 3 in the table top of the epitaxial wafer to be processed from the outer side by using a wet selective oxidation technology to form an oxide aperture. And (3) wet selective oxidation process: heating the oxidation furnace to 430 ℃, setting the water temperature to 100 ℃, introducing a trace amount of N2, stabilizing for 20min at a flow rate of 1L/min, and removing redundant air in the oxidation furnace. After 20min, N2 was started to flow at a flow rate of 9L/min and stabilized for 30 min. After stabilizing for 30min, the epitaxial wafer is put into an oxidation furnace for oxidation, and the oxidation time is determined according to the oxidation aperture required to be oxidized. After the oxidation is finished, waiting for the furnace temperature to be reduced to 80 ℃, and taking out the epitaxial wafer for later use;
step five, manufacturing a metal N electrode after photoetching
Coating SU-8 negative photoresist on an epitaxial wafer to be processed, manufacturing an N electrode pattern through photoetching and developing, and then growing an N electrode metal material through metal processes such as magnetron sputtering technology sputtering and the like;
step six, stripping non-N electrode metal
Soaking the epitaxial wafer on which the N electrode metal grows in an acetone solution for 4-6 hours, then carrying out a metal stripping process to strip the metal of the non-N electrode and manufacturing a metal N electrode;
seventhly, manufacturing a metal P electrode after photoetching
Coating an L300 negative photoresist on an epitaxial wafer to be processed, manufacturing a pattern of a P electrode through photoetching and developing, and then growing a P electrode metal material through metal processes such as magnetron sputtering technology sputtering and the like;
step eight, stripping non-P electrode metal
The metal is to put the epitaxial wafer on which the P electrode metal grows into an acetone solution to be soaked for 4-6 hours, then a metal stripping process is carried out, the metal of the non-P electrode is stripped, and a metal P electrode is manufactured;
ninth step of preparing optical resonant external cavity
And (3) thinning the substrate layer 10 on the back of the epitaxial wafer, applying a double-sided overlay process to carry out photoetching and development, and depositing an infrared-transmitting optical material such as SiO2 or Si3N4 with a convex-concave structure in a region overlapped with the light outlet to form the optical mode loss layer 11. The optical mode loss layer 11 can be calculated according to mode coupling theory or external cavity phase-lock theory such as Talbot effect.
Tenth, cleavage packaging
And (3) cleaving the manufactured chip by using a cleaving dicing saw, completing welding with an electrode of an external power supply system by adopting a mode of thermocompression bonding and the like, and completing chip packaging.
Example 2:
as shown in fig. 4, the present invention provides a method for preparing a bottom-emitting rare-earth-doped VCSEL external cavity feedback coherent array laser, comprising:
step one, growing an epitaxial structure
Sequentially epitaxially growing an N-type semi-reflection DBR layer and an N-type total reflection DBR layer 8 on the surface of the GaAs substrate;
step two, epitaxial growth of rare earth ion doped layer
And continuously growing a plurality of GaAs and XyAsz (X is lanthanide) layers on the N-type total reflection DBR layer 8 by adopting an MBE technology to form the rare earth ion doping layer with a multilayer structure, wherein the GaAs layer and the XyAsz (X is lanthanide) layers are alternately grown. And continuously and sequentially growing an N-type waveguide layer 6, a semiconductor multi-quantum well layer 5, a P-type waveguide layer 4, an oxide layer 3, a P-type total reflection DBR layer 2 and a P-type total reflection DBR layer 2 on the rare earth ion doping layer by adopting an MBE technology. Cleaning the VCSEL according to RCA standard, blowing the chip to be dried by high-purity nitrogen protection after cleaning is finished, and heating and drying the epitaxial wafer to be processed for later use after ensuring cleanness;
step three, manufacturing the table top
Firstly, a mesa structure is manufactured on an epitaxial wafer to be processed by adopting methods such as wet etching or dry etching. If an etching method is adopted, the gas flow ratio of etching Cl2/BCl3 is 1: and 3, etching with the power of 500W to expose the oxide layer 3. And secondly, etching off the redundant SiO2 on the chip by a wet method, and cleaning the chip. Finally, after cleaning, drying the epitaxial wafer to be processed by using high-purity nitrogen, and after ensuring cleanness, heating and drying the wafer for later use;
fourthly, manufacturing an oxidation hole
And oxidizing the oxide layer 3 in the table top of the epitaxial wafer to be processed from the outer side by using a wet selective oxidation technology to form an oxide aperture. And (3) wet selective oxidation process: heating the oxidation furnace to 430 ℃, setting the water temperature to 100 ℃, introducing a trace amount of N2, stabilizing for 20min at a flow rate of 1L/min, and removing redundant air in the oxidation furnace. After 20min, N2 was started to flow at a flow rate of 9L/min and stabilized for 30 min. After stabilizing for 30min, the epitaxial wafer is put into an oxidation furnace for oxidation, and the oxidation time is determined according to the oxidation aperture required to be oxidized. After the oxidation is finished, waiting for the furnace temperature to be reduced to 80 ℃, and taking out the epitaxial wafer for later use;
step five, manufacturing a metal N electrode after photoetching
Coating SU-8 negative photoresist on an epitaxial wafer to be processed, manufacturing an N electrode pattern through photoetching and developing, and then growing an N electrode metal material through metal processes such as magnetron sputtering technology sputtering and the like;
step six, stripping non-N electrode metal
Soaking the epitaxial wafer on which the N electrode metal grows in an acetone solution for 4-6 hours, then carrying out a metal stripping process to strip the metal of the non-N electrode and manufacturing a metal N electrode;
seventhly, manufacturing a metal P electrode after photoetching
Coating an L300 negative photoresist on an epitaxial wafer to be processed, manufacturing a pattern of a P electrode through photoetching and developing, and then growing a P electrode metal material through metal processes such as magnetron sputtering technology sputtering and the like;
step eight, stripping non-P electrode metal
The metal is to put the epitaxial wafer on which the P electrode metal grows into an acetone solution to be soaked for 4-6 hours, then a metal stripping process is carried out, the metal of the non-P electrode is stripped, and a metal P electrode is manufactured;
ninth step of preparing optical resonant external cavity
And (3) thinning the substrate layer 10 on the back of the epitaxial wafer, applying a double-sided overlay process to carry out photoetching and development, and depositing an infrared-transmitting optical material such as SiO2 or Si3N4 with a convex-concave structure in a region overlapped with the light outlet to form the optical mode loss layer 11. The optical mode loss layer 11 can be calculated according to mode coupling theory or external cavity phase-lock theory such as Talbot effect.
Tenth, cleavage packaging
And (3) cleaving the manufactured chip by using a cleaving dicing saw, completing welding with an electrode of an external power supply system by adopting a mode of thermocompression bonding and the like, and completing chip packaging.
Example 3:
as shown in fig. 5, the present invention provides a method for preparing a bottom-emitting rare-earth doped VCSEL external cavity feedback coherent array laser, comprising:
step one, growing an epitaxial structure
Sequentially epitaxially growing an N-type semi-reflection DBR layer and an N-type total reflection DBR layer 8 on the surface of the GaAs substrate;
step two, doping ion solution to form rare earth ion doped layer
Preparing a solution containing required doping ions in advance, uniformly soaking the surface of the N-type DBR layer 9 in the solution, and then burning at a high temperature to condense and vitrify the N-type DBR layer into a doping layer. Repeating the coating and firing process, and finally polishing to obtain the rare earth ion doped layer required by design. And continuously and sequentially growing an N-type waveguide layer 6, a semiconductor multi-quantum well layer 5, a P-type waveguide layer 4, an oxide layer 3, a P-type total reflection DBR layer 2 and a P-type total reflection DBR layer 2 on the rare earth ion doping layer by adopting an MBE technology. Cleaning the VCSEL according to RCA standard, blowing the chip to be dried by high-purity nitrogen protection after cleaning is finished, and heating and drying the epitaxial wafer to be processed for later use after ensuring cleanness;
step three, manufacturing the table top
Firstly, a mesa structure is manufactured on an epitaxial wafer to be processed by adopting methods such as wet etching or dry etching. If an etching method is adopted, the gas flow ratio of etching Cl2/BCl3 is 1: and 3, etching with the power of 500W to expose the oxide layer 3. And secondly, etching off the redundant SiO2 on the chip by a wet method, and cleaning the chip. Finally, after cleaning, drying the epitaxial wafer to be processed by using high-purity nitrogen, and after ensuring cleanness, heating and drying the wafer for later use;
fourthly, manufacturing an oxidation hole
And oxidizing the oxide layer 3 in the table top of the epitaxial wafer to be processed from the outer side by using a wet selective oxidation technology to form an oxide aperture. And (3) wet selective oxidation process: heating the oxidation furnace to 430 ℃, setting the water temperature to 100 ℃, introducing a trace amount of N2, stabilizing for 20min at a flow rate of 1L/min, and removing redundant air in the oxidation furnace. After 20min, N2 was started to flow at a flow rate of 9L/min and stabilized for 30 min. After stabilizing for 30min, the epitaxial wafer is put into an oxidation furnace for oxidation, and the oxidation time is determined according to the oxidation aperture required to be oxidized. After the oxidation is finished, waiting for the furnace temperature to be reduced to 80 ℃, and taking out the epitaxial wafer for later use;
step five, manufacturing a metal N electrode after photoetching
Coating SU-8 negative photoresist on an epitaxial wafer to be processed, manufacturing an N electrode pattern through photoetching and developing, and then growing an N electrode metal material through metal processes such as magnetron sputtering technology sputtering and the like;
step six, stripping non-N electrode metal
Soaking the epitaxial wafer on which the N electrode metal grows in an acetone solution for 4-6 hours, then carrying out a metal stripping process to strip the metal of the non-N electrode and manufacturing a metal N electrode;
seventhly, manufacturing a metal P electrode after photoetching
Coating an L300 negative photoresist on an epitaxial wafer to be processed, manufacturing a pattern of a P electrode through photoetching and developing, and then growing a P electrode metal material through metal processes such as magnetron sputtering technology sputtering and the like;
step eight, stripping non-P electrode metal
The metal is to put the epitaxial wafer on which the P electrode metal grows into an acetone solution to be soaked for 4-6 hours, then a metal stripping process is carried out, the metal of the non-P electrode is stripped, and a metal P electrode is manufactured;
ninth step of preparing optical resonant external cavity
And (3) thinning the substrate layer 10 on the back of the epitaxial wafer, applying a double-sided overlay process to carry out photoetching and development, and depositing an infrared-transmitting optical material such as SiO2 or Si3N4 with a convex-concave structure in a region overlapped with the light outlet to form the optical mode loss layer 11. The optical mode loss layer 11 can be calculated according to mode coupling theory or external cavity phase-lock theory such as Talbot effect.
Tenth, cleavage packaging
And (3) cleaving the manufactured chip by using a cleaving dicing saw, completing welding with an electrode of an external power supply system by adopting a mode of thermocompression bonding and the like, and completing chip packaging.
According to the preparation method disclosed by the embodiment, the rare earth doped VCSEL external cavity feedback coherent array laser is prepared and obtained, based on a new photon cascade type light-emitting system with an interaction of an electron-hole composite stimulated radiation mechanism and a particle energy level system transition radiation mechanism, conversion from low-energy photons to high-energy photons is realized through an up-conversion material doped with rare earth ions, efficient utilization of energy in an energy level transition process is realized, light-emitting efficiency is improved, a determined phase relation among light-emitting units is established based on an optical resonance external cavity, laser beam quality is improved, and therefore coherent array laser with narrow line width and high beam quality is output.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes will occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A rare earth doped VCSEL external cavity feedback coherent array laser comprises a substrate and a VCSEL chip epitaxial structure with a rare earth element doped layer, wherein the VCSEL chip epitaxial structure comprises a first laser resonant cavity, a second laser resonant cavity and a third laser resonant external cavity;
the first laser resonant cavity and the second laser resonant cavity form a photon cascade composite cavity, the first laser resonant cavity can generate first wavelength laser under current excitation, and the first wavelength laser is used as pump light in the second laser resonant cavity;
the second laser resonant cavity comprises the rare earth element doped layer, and rare earth element ions doped in the rare earth element doped layer generate second wavelength fluorescence under the excitation of the laser with the first wavelength;
and the second wavelength fluorescence enters the third laser resonant external cavity from the second laser resonant cavity and then enters the second laser resonant cavity to form external cavity mutual injection feedback, and the third laser resonant external cavity outputs coherent array second wavelength laser.
2. The rare-earth doped VCSEL external cavity feedback coherent array laser as claimed in claim 1, wherein the VCSEL chip epitaxial structure comprises an N-type DBR layer, an N-type total reflection DBR layer, an N-type waveguide layer, a rare earth element doped layer, a semiconductor multi-quantum well layer, a P-type waveguide layer, an oxide layer, a P-type total reflection DBR layer and a P-type DBR layer, and an optical mode loss layer and a semi-reflective and semi-transparent layer at the bottom of the substrate, which are sequentially extended from the substrate upwards.
3. The rare-earth doped VCSEL external cavity feedback coherent array laser according to claim 2, wherein the N-type total reflection DBR layer, the N-type waveguide layer, the semiconductor multiple quantum well layer, the P-type waveguide layer, and the P-type total reflection DBR layer constitute the first laser resonator;
the N-type DBR layer, the rare earth element doped layer, the oxide layer and the P-type DBR layer form the second laser resonant cavity;
the substrate, the optical mode loss layer and the semi-reflecting and semi-transmitting layer form the third laser resonant external cavity.
4. The rare-earth doped VCSEL external cavity feedback coherent array laser as claimed in claim 3, wherein a laser generation mechanism of the first laser resonator is electroluminescence, and under excitation of an injection current, electrons and holes recombine to radiate a plurality of photons to form laser light of the first wavelength between energy bands;
and the N-type total reflection DBR layer and the P-type total reflection DBR layer totally reflect the laser with the first wavelength.
5. The rare-earth-doped VCSEL external cavity feedback coherent array laser as claimed in claim 3, wherein a laser generation mechanism of the second laser resonator is photoluminescence, and particle level transition of rare-earth element ions doped in the rare-earth element doped layer generates second wavelength fluorescence under excitation of the first wavelength laser;
in the second laser resonant cavity, the N-type DBR layer is a total reflection layer, the P-type DBR layer is a semi-reflection and semi-transmission layer, or the N-type DBR layer is a semi-reflection and semi-transmission layer, and the P-type DBR layer is a total reflection layer;
the total reflection layer totally reflects the second wavelength fluorescence, and the reflectivity of the semi-reflecting and semi-transmitting layer to the second wavelength fluorescence is 50% -90%;
and the second wavelength fluorescence enters the third laser resonant external cavity after passing through the semi-reflecting and semi-transmitting layer in the second laser resonant cavity, and then enters the second laser resonant cavity after passing through the semi-reflecting and semi-transmitting layer of the third laser resonant external cavity to form external cavity mutual injection feedback.
6. The rare earth doped VCSEL external cavity feedback coherent array laser as claimed in claim 3, wherein the rare earth element doped layer is doped with lanthanide ions, and the doping species is one element or a plurality of elements in a certain proportion;
the doping method of the rare earth element doping layer comprises ion implantation doping, epitaxial growth doping and ion solution doping.
7. The method of claim 6The rare earth doped VCSEL external cavity feedback coherent array laser is characterized in that the epitaxial growth doping mode of the rare earth element doped layer is a GaAs layer and XyAszThe layers are grown alternately, wherein X is one of the lanthanides.
8. The rare-earth doped VCSEL external cavity feedback coherent array laser as claimed in claim 3, wherein the optical mode loss layer is made of an infrared transmitting optical material with a certain concave-convex structure and is positioned inside the semi-reflecting and semi-transparent layer in the third laser resonator;
the second wavelength fluorescence can lose a high-order mode through the optical mode loss layer, so that light in a low-order mode enters the second laser resonant cavity to form oscillation.
9. The rare-earth doped VCSEL external cavity feedback coherent array laser as claimed in claim 3, wherein the reflectivity of the semi-reflective and semi-transparent layer to the second wavelength fluorescence is 50% -90%.
10. A method for fabricating a rare earth doped VCSEL external cavity feedback coherent array laser as claimed in any of claims 1 to 9, comprising:
sequentially carrying out epitaxial growth on the surface of the substrate to prepare a VCSEL chip epitaxial structure, wherein the rare earth element doped layer is formed in a rare earth ion injection, epitaxial growth or ion solution doping mode;
manufacturing a mesa structure on the VCSEL chip epitaxial structure;
manufacturing an oxidation hole on an oxidation layer in the VCSEL chip epitaxial structure;
photoetching the surface of the VCSEL chip epitaxial structure and then manufacturing a metal N electrode;
stripping the metal of the non-N electrode;
photoetching the surface of the VCSEL chip epitaxial structure and then manufacturing a metal P electrode;
stripping the metal of the non-P electrode;
preparing an optical resonance external cavity on the other surface of the substrate;
and carrying out cleavage and packaging on the manufactured chip.
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