CN114269039B - LED device with high electro-optic modulation bandwidth - Google Patents
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Abstract
The invention discloses an LED device with high electro-optic modulation bandwidth, which comprises an LED circuit, an inductive device and a packaging substrate, wherein the LED circuit comprises a plurality of LED-A sub-circuits and LED-B sub-circuits, the LED-A sub-circuits and the LED-B sub-circuits comprise a plurality of LED chips, the LED-A sub-circuits are connected with the inductive device in series, the LED-B sub-circuits are not connected with the inductive device in series, the LED-A sub-circuits and the LED-B sub-circuits are connected in parallel and are respectively fixed on the packaging substrate with the inductive device to form electrical connection, and all the circuits are simultaneously conducted. The invention can realize the illumination application of the LED-A and LED-B sub-circuits, can make more high-frequency signals flow into the LED-B sub-circuits, and improves the modulation bandwidth when the LED-B sub-circuits are used as signal emission sources for communication application.
Description
Technical Field
The invention relates to the technical field of semiconductor light-emitting devices, in particular to an LED device with high electro-optic modulation bandwidth.
Background
In the background of the prior art, it is still difficult to achieve a practical level of low cost for a visible light communication LED emitter that achieves both illumination and communication. Commercial LED chips generally only can emit monochromatic light and can be used for illumination in special scenes, and fluorescent powder needs to be excited to realize general illumination, or multiple monochromatic LEDs are adopted to form a multi-primary mixed-color illumination array. When the single-chip LED is matched with fluorescent powder to realize the illumination function, the fluorescent powder can greatly weaken the intensity of communication signals and limit the modulation bandwidth of LED visible light communication, and the fluorescent LED is not suitable to be used as an emission light source of high-speed visible light communication. In addition, the size of the lighting LED chip is large-size and high-power LED, the capacitance of the lighting LED chip is large, the RC time constant is large, the modulation bandwidth is small and limited within dozens of MHz, and if the lighting LED chip is not supported by an external equalization circuit, the high communication speed is difficult to realize. In many studies on LEDs for visible light communication, the size of the LEDs tends to be small to realize a higher modulation bandwidth, but the light efficiency is also seriously reduced, and the LEDs are not suitable for illumination. Of course, special chip structures are also studied to achieve higher modulation bandwidths, but the manufacturing cost is increased and the reliability of the device may be reduced.
Chinese patent granted publication No. CN 106571358B discloses a visible light communication emitting device using a micro-inductor patterned substrate, in which an inductor coil is fabricated on the substrate to be connected in series with a 4 × 4 LED series array on a sapphire substrate to implement high-power use and compensate a capacitor to improve a response frequency.
The invention discloses a Chinese patent granted publication No. CN 107134448B, and discloses an integratable method for improving the modulation bandwidth of a visible light communication LED light source, which is characterized in that a metal film resistor is deposited in the middle of an insulating substrate firstly, then two parallel plate capacitors are manufactured on two sides of the insulating substrate, the two capacitors are connected to two ends of an LED in series and are connected with the film resistor in parallel, low-frequency signals can be reduced to pass through the LED, the balance effect is realized, and the modulation bandwidth is further improved.
Therefore, the problem that LED illumination and communication are difficult to be compatible is solved, and more solutions are to integrate a plurality of LED chips into a single chip array device and separately control the chips with different functions for illumination and communication.
Disclosure of Invention
The invention aims to provide an LED device with high electro-optic modulation bandwidth, which solves the problem that the electro-optic modulation bandwidth of the LED device is small in the aspect of visible light communication on the premise of not influencing illumination.
The purpose of the invention is realized by the following steps:
an LED device with high electro-optical modulation bandwidth comprises an LED circuit, an inductive device and a packaging substrate, wherein the LED circuit comprises a plurality of LED-A sub-circuits and LED-B sub-circuits, the LED-A sub-circuits and the LED-B sub-circuits comprise a plurality of LED chips, the LED-A sub-circuits are connected with the inductive device in series, the LED-B sub-circuits are not connected with the inductive device in series, the LED-A sub-circuits and the LED-B sub-circuits are connected in parallel and are respectively fixed on the packaging substrate together with the inductive device to form electrical connection, and all the circuits are conducted at the same time.
Preferably, the inductive device is a chip inductor, and the inductance value of the chip inductor is greater than that of the LED-B sub-circuit in the working state; the packaging substrate sequentially comprises a solder mask layer, a pad layer, a line layer, an insulating layer and a substrate layer from top to bottom, wherein the pad layer is provided with a pad, the line layer is provided with a printed circuit, and the edge of the packaging substrate is provided with a positive electrode and a negative electrode.
Preferably, the LED chip is of a vertical structure, and the LED chip of the LED-B sub-circuit is not coated with fluorescent powder.
The invention also provides a preparation method of the LED device with high electro-optic modulation bandwidth, which comprises the following steps:
(1) placing the LED-A sub-circuit and the LED-B sub-circuit on a packaging substrate together, arranging the LED-B sub-circuit in the center of the packaging substrate, wherein the LED-A sub-circuit is distributed at equal angles at the periphery of the LED-B sub-circuit, and arranging the bonding pad at the tail end of the printed circuit;
(2) fixing the LED-A sub-circuit, the LED-B sub-circuit and the inductive device on the surface of a packaging substrate;
(3) electrically connecting the LED chips in the LED-A sub-circuit and the LED-B sub-circuit with a bonding pad on a packaging substrate in a lead bonding mode, and connecting the LED-A sub-circuit and the LED-B sub-circuit in parallel;
(4) packaging and curing the LED-A sub-circuit and the LED-B sub-circuit by using packaging glue, and forming a convex lens shape after curing;
(5) the inductive devices are connected in series in the LED-A sub-circuit, and the simultaneous conduction of all the circuits is realized.
Preferably, the LED-A sub-circuit and the LED-B sub-circuit are single LED chips.
Preferably, in the step (2), the LED-a sub-circuit and the LED-B sub-circuit are respectively die-bonded on the surface of the package substrate by die-bonding solder material, and the inductive device is soldered on the package substrate by solder material.
Preferably, in step (4), the surfaces of the LED-A and LED-B sub-circuits are packaged together and cured.
Preferably, the LED-A sub-circuit and the LED-B sub-circuit can also be individually packaged LED chips, and the chips are packaged on the device substrate.
Preferably, the LED-a sub-circuit and the LED-B sub-circuit may also be LED chip modules formed by a plurality of LED chips, and the LED chip modules are respectively packaged on the device substrate.
Preferably, in the step (2), the LED-a sub-circuit, the LED-B sub-circuit and the inductive device are respectively soldered to the package substrate by a solder material.
Under the influence of the electrical characteristics of the visible light communication LED device, the LED device is a nonlinear element, the impedance of the LED device is not a constant value, and the impedance of the LED device is changed under the injection of transmission signals with different direct current drives or different frequencies. Under the bias of the operating current of the LED, the LED can present high impedance characteristic under high frequency. Based on the electrical characteristics, the invention can add an inductor in series in each LED-A sub-circuit, and the inductance value of the inductor is larger than that of the LED-B sub-circuit in a working state, so that the impedance of the LED-A sub-circuit series circuit is far larger than that of the LED-B sub-circuit under a specific frequency, and at the moment, communication electric signals can flow into each LED-B sub-circuit more. Therefore, when the channels are simultaneously conducted, the visible light communication response intensity of the low-frequency signals of the LED-B sub-circuits is unchanged, the visible light communication response intensity of the high-frequency signals is improved, the electro-optic modulation bandwidth is improved, and if the LED-A sub-circuits are provided with a plurality of LED-A sub-circuits, the frequency response intensity of the LED-B sub-circuits in a plurality of frequency bands can be even improved. Meanwhile, each sub-circuit of the LED-A and each sub-circuit of the LED-B only have a small-amplitude radio frequency signal to pass through, the current passing through each circuit is not obviously influenced, and the illumination performance is not greatly influenced.
The LED device with the high electro-optic modulation bandwidth has the advantages that the structure and the preparation method are simple, the current preparation process of the LED lighting device can be compatible, the available modulation bandwidth of the visible light communication LED light source can be remarkably improved, and the functions of lighting and communication can be considered.
Description of the drawings:
FIG. 1 is a schematic circuit diagram of a high electro-optic modulation bandwidth LED device of the present invention;
fig. 2 is a schematic structural diagram of an LED device provided in embodiment 1 of the present invention;
fig. 3 is a partially enlarged view of the structure of an LED device provided in embodiment 1 of the present invention;
fig. 4 is a structural sectional view of an LED device provided in embodiment 1 of the present invention;
fig. 5 is a frequency response curve diagram of an LED device provided in embodiment 1 of the present invention in an operating state;
fig. 6 is a schematic structural diagram of an LED device provided in embodiment 2 of the present invention;
fig. 7 is a structural sectional view of an LED device provided in embodiment 2 of the present invention;
fig. 8 is a schematic structural diagram of an LED device provided in embodiment 3 of the present invention.
Description of reference numerals:
101. the LED-A sub-circuit 101a LED-A1 sub-circuit 101B LED-A2 sub-circuit 102 LED-B sub-circuit 103 device substrate 104 pad 105 inductive device 106 negative electrode 107 positive electrode 108 printed circuit 109 package substrate 110 die attach solder 111 package glue 112 solder.
The specific implementation mode is as follows:
the invention is further described below with reference to the following examples and figures. It should be apparent that the described embodiments are only some embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention. It is to be noted that the drawings of the present invention are provided in a very simplified and non-precise scale for convenience and clarity in order to facilitate the description of the present invention.
Example 1
As shown in fig. 1 to 5, embodiment 1 of the present invention provides an LED device with a high electro-optic modulation bandwidth, which includes an LED circuit, an inductive device 105, and a package substrate 109, where the LED circuit includes a plurality of LED-a sub-circuits 101 and LED-B sub-circuits 102, the LED-a sub-circuits 101 and LED-B sub-circuits 102 include a plurality of LED chips, the LED-a sub-circuits 101 are connected in series with the inductive device 105, the LED-B sub-circuits 102 are not connected in series with the inductive device 105, the LED-a sub-circuits 101 and the LED-B sub-circuits 102 are connected in parallel, and are respectively fixed on the package substrate 109 to form an electrical connection, and the circuits are turned on at the same time.
The inductive device 105 is a chip inductor, and the inductance value thereof is greater than that of the LED-B sub-circuit 101 in the operating state; the package substrate 109 sequentially comprises a solder mask layer, a pad layer, a circuit layer, an insulating layer and a base material layer from top to bottom, the pad layer is provided with a pad 104, the circuit layer is provided with a printed circuit 108, and the edge of the package substrate 109 is provided with a positive electrode 107 and a negative electrode 106.
In this embodiment, each of the LED-a sub-circuit 101 and the LED-B sub-circuit 102 is a single LED chip, and 5 yellow LED chips with a 27mil vertical structure are selected, wherein 4 are divided as the LED-a sub-circuit 101 for 4 channels, and 1 is divided as the LED-B sub-circuit 102 for 1 channel. For convenience of manufacture and illustration, the present embodiment is not optimized, and the 4-way LED-a sub-circuits are all represented by the same reference numeral 101.
The preparation method of the LED device of the present embodiment comprises:
(1) placing the LED-A sub-circuit 101 and the LED-B sub-circuit 102 on a package substrate together, arranging the LED-B sub-circuit 102 in the center of the package substrate 109, arranging the LED-A sub-circuit 101 at the periphery of the LED-B sub-circuit 102 in an equiangular distribution, and placing the pad 104 at the tail end of the printed circuit 108;
(2) the LED-A sub-circuit 101 and the LED-B sub-circuit 102 are respectively fixed on the surface of a packaging substrate 109 through a crystal fixing welding material 110, and an inductive device 105 is welded on the packaging substrate through a welding material 112;
(3) Electrically connecting the LED chips in the LED-A sub-circuit 101 and the LED-B sub-circuit 102 with the bonding pad 104 on the packaging substrate 109 in a lead bonding manner, and connecting the LED-A sub-circuit 101 and the LED-B sub-circuit 102 in parallel;
(4) packaging and curing the surfaces of the LED-A sub-circuit 101 and the LED-B sub-circuit 102 together by using packaging adhesive 111, and forming a convex lens shape after curing;
(5) for a 27mil vertical structure yellow light LED, under a bias state of a current of 100mA, a parasitic inductance value of about several tens nH, so that the impedance of the LED-a sub-circuit 101 can be much larger than that of the LED-B sub-circuit 102 by selecting a 1 μ H patch inductor when a communication frequency is greater than 5 MHz. The inductive devices are connected in series in the LED-A sub-circuit to realize the simultaneous conduction of all the paths.
Example 1 is only to verify the feasibility of the patent and not to optimize the design, and fig. 5 is a frequency response curve (S21) tested in example 1, and it can be seen from fig. 5 that the modulation bandwidth of the LED-B sub-circuit 102 at a current of 100mA is 59.1MHz, which is much larger than the modulation bandwidth of 15.5MHz when a single LED chip passes through 100mA, while the modulation bandwidth of the LED-a sub-circuit 101 at a current of 100mA is only 5.6 MHz. It can be seen that the modulation bandwidth of the chip LED-B sub-circuit 102 for communication is significantly increased in this device.
Example 2
As shown in fig. 1, fig. 6 and fig. 7, this embodiment provides an LED device with high electro-optic modulation bandwidth, and the main difference between embodiment 2 and embodiment 1 is that the LED-a sub-circuit 101 and the LED-B sub-circuit 102 are separately packaged LED chips, and the chips are packaged on a device substrate 103. In this embodiment, the LED chips used are all 45mil blue LED chips, the encapsulation adhesive of the 4-way LED-a sub-circuit 101 is silica gel added with yellow phosphor powder, so that the silica gel emits white light for illumination, and the encapsulation adhesive of the 1-way LED-B sub-circuit 102 is pure silica gel. For convenience of manufacture and illustration, the present embodiment is not optimized, and the 4-way LED-a sub-circuits are all represented by the same reference numeral 101. The package substrate 109 is provided with a positive electrode 107 and a negative electrode 106 at its edges. The rest of the structure is the same as that of example 1.
The preparation method of the LED device of the present embodiment comprises:
(1) placing the LED-A sub-circuit 101 and the LED-B sub-circuit 102 on a package substrate together, arranging the LED-B sub-circuit 102 in the center of the package substrate 109, arranging the LED-A sub-circuit 101 at the periphery of the LED-B sub-circuit 102 in an equiangular distribution, and placing the pad 104 at the tail end of the printed circuit 108;
(2) soldering the LED-a subcircuit 101, the LED-B subcircuit 102 and the inductive device 105 to the package substrate by means of the soldering material 112;
(3) Electrically connecting the LED chips in the LED-A sub-circuit 101 and the LED-B sub-circuit 102 with the bonding pad 104 on the packaging substrate 109 in a lead bonding manner, wherein the LED-A sub-circuit 101 and the LED-B sub-circuit 102 are connected in parallel;
(4) the LED chips in the LED circuit are respectively and independently packaged on the device substrate 103 by adopting packaging adhesive 111, and are cured into a convex lens shape;
(5) for a 45mil vertical structure blue LED, under a bias condition of 350mA, the parasitic inductance value is about tens nH, and a1 μ H patch inductor is selected to make the impedance of the LED-a sub-circuit 101 much larger than that of the LED-B sub-circuit 102 when the communication frequency is higher than a specific frequency. The inductive devices 105 are connected in series in the LED-a sub-circuit 101 to achieve simultaneous conduction of the channels.
The LED device prepared in example 2 can realize daily white light illumination and also can realize visible light communication applications.
Example 3
As shown in fig. 1, this embodiment provides an LED device with high electro-optic modulation bandwidth, and embodiment 3 differs from embodiment 1 in that, in this embodiment, the LED-a sub-circuit 101 and the LED-B sub-circuit 102 are LED chip modules, and the LED chip modules are respectively packaged on the device substrate 103. In this embodiment, the LED-a sub-circuit 101 has two paths, namely, an LED-a1 sub-circuit 101a and an LED-a2 sub-circuit 101b, chips adopted by the LED-a sub-circuit 101 are all 45mil yellow light LED chips, each path has 3 yellow light LEDs connected in series, and the packages are filled with pure silica gel respectively; the chips used by the LED-B sub-circuit 102 are all 45mil blue light LED chips, 3 blue light LEDs are connected in series, and the packages are all filled with pure silica gel respectively. The rest of the structure is the same as that of example 1.
As shown in fig. 8, in the manufacturing process of the LED device of this embodiment, the LED-a1 sub-circuit 101a, the LED-a2 sub-circuit 101B and the LED-B sub-circuit 102 are placed together on the surface of the package substrate 109 having the printed circuit 108 and the pads 104. The LED-B sub-circuit 102 is located at the center of the package substrate 109, the LED-A1 sub-circuit 101a and the LED-A2 sub-circuit 101B are distributed at equal angles around the periphery of the LED-B sub-circuit 102, the pad 104 is disposed at the end of the printed circuit 108, and the package substrate 109 has a positive electrode 107 and a negative electrode 106 at its edge. The LED-a1 sub-circuit 101a, the LED-a2 sub-circuit 101B, the LED-B sub-circuit 102, and the inductive device 105 are soldered to the surface of the package substrate 109 with the solder material 112, and simultaneous conduction is achieved. The rest of the preparation process is the same as example 2.
For 3 45mil vertical structure yellow light LED series modules, under the bias state of current 350mA, the parasitic inductance value is about 90nH, 1 muH of patch inductor is selected to be connected in series to the LED-A1 sub-circuit 101a, and 0.5 muH of patch inductor is selected to be connected in series to the LED-A2 sub-circuit 101B, so that the impedance of the two paths is larger than that of the LED-B sub-circuit 102 in different degrees, and the gains of the frequency response of the LED-B sub-circuit 102 under different frequencies are different, so that the modulation bandwidth is improved.
The LED device prepared in embodiment 3 can realize multi-primary white light illumination and can also realize visible light communication application.
It should be understood that the above description is only exemplary of the present invention, and is not intended to limit the present invention, and any modifications, equivalents, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. An LED device with high electro-optic modulation bandwidth, comprising: the LED circuit comprises a plurality of LED-A sub-circuits and LED-B sub-circuits, wherein the LED-A sub-circuits and the LED-B sub-circuits comprise a plurality of LED chips, the inductive devices are connected in series with the LED-A sub-circuits, the inductive devices are not connected in series with the LED-B sub-circuits, the LED-A sub-circuits and the LED-B sub-circuits are connected in parallel and are respectively fixed on the packaging substrate together with the inductive devices to form electrical connection, and all the circuits are conducted simultaneously;
the inductive device is a patch inductor, and the inductance value of the inductive device is greater than that of the LED-B sub-circuit in the working state; the packaging substrate sequentially comprises a solder mask layer, a pad layer, a circuit layer, an insulating layer and a base material layer from top to bottom, wherein the pad layer is provided with a pad, the circuit layer is provided with a printed circuit, and the edge of the packaging substrate is provided with a positive electrode and a negative electrode;
The LED device with the high electro-optic modulation bandwidth is prepared by the following steps:
(1) placing the LED-A sub-circuit and the LED-B sub-circuit on a packaging substrate together, wherein the LED-B sub-circuit is arranged in the center of the packaging substrate, the LED-A sub-circuit is distributed at equal angles on the periphery of the LED-B sub-circuit, and the bonding pad is arranged at the tail end of the printed circuit;
(2) fixing the LED-A sub-circuit, the LED-B sub-circuit and the inductive device on the surface of a packaging substrate;
(3) electrically connecting the LED chips in the LED-A sub-circuit and the LED-B sub-circuit with a bonding pad on a packaging substrate in a lead bonding mode, wherein the LED-A sub-circuit and the LED-B sub-circuit are connected in parallel;
(4) packaging and curing the LED-A sub-circuit and the LED-B sub-circuit by using packaging glue, and forming a convex lens shape after curing;
(5) the inductive devices are connected in series in the LED-A sub-circuit, and the simultaneous conduction of all the circuits is realized.
2. The high electro-optic modulation bandwidth LED device of claim 1, wherein: the LED chip is of a vertical structure, and the LED chip of the LED-B sub-circuit is not coated with fluorescent powder.
3. The high electro-optic modulation bandwidth LED device of claim 1, wherein: the LED-A sub-circuit and the LED-B sub-circuit are single LED chips.
4. The high electro-optic modulation bandwidth LED device of claim 1, wherein: the LED-A sub-circuit and the LED-B sub-circuit are LED chips which are packaged independently, and the chips are packaged on a device substrate.
5. The high electro-optic modulation bandwidth LED device of claim 1, wherein: the LED-A sub-circuit and the LED-B sub-circuit are LED chip modules which are respectively packaged on the device substrate.
6. A high electro-optical modulation bandwidth LED device according to claim 1 or 3, wherein: in the step (2), the LED-A sub-circuit and the LED-B sub-circuit are respectively fixed on the surface of the packaging substrate through a crystal fixing welding material, and the inductive device is welded on the packaging substrate through the welding material.
7. A high electro-optical modulation bandwidth LED device according to claim 1 or 3, wherein: in step (4), the surfaces of the LED-A and LED-B sub-circuits are packaged together and cured.
8. The high electro-optic modulation bandwidth LED device of claim 1 or 4 or 5, wherein: in the step (2), the LED-A sub-circuit, the LED-B sub-circuit and the inductive device are respectively welded on the packaging substrate through welding materials.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61265806A (en) * | 1985-05-20 | 1986-11-25 | Toshiba Corp | Monitoring device for superconducting coil |
| JP2001313424A (en) * | 2000-04-28 | 2001-11-09 | Toshiba Lighting & Technology Corp | Light-emitting diode drive device |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101489332A (en) * | 2008-01-14 | 2009-07-22 | 杨泰和 | Uni-directional light emitting diode drive circuit in pulsed power series resonance |
| US20090179886A1 (en) * | 2008-01-14 | 2009-07-16 | Tai-Her Yang | Uni-directional light emitting diode drive circuit in bi-directional power parallel resonance |
| CN101330771A (en) * | 2008-07-17 | 2008-12-24 | 叶建峰 | Series frequency-reducing type frequency divider |
| JP5447969B2 (en) * | 2010-03-31 | 2014-03-19 | 東芝ライテック株式会社 | LED lighting device and LED lighting apparatus |
| GB201011081D0 (en) * | 2010-07-01 | 2010-08-18 | Macfarlane Alistair | Improved semi resonant switching regulator, power factor control and LED lighting |
| CN202889695U (en) * | 2012-04-16 | 2013-04-17 | 刘晓博 | High-frequency AC LED lamp for illumination |
| CN105870286A (en) * | 2016-04-22 | 2016-08-17 | 南昌大学 | GaN-based light emitting diode (LED) epitaxial structure with V-pit multi-quantum well multi-wavelength and fabrication method thereof |
| CN206894939U (en) * | 2016-11-14 | 2018-01-16 | 常州市巨泰电子有限公司 | The controller of LED with bluetooth |
| CN106784190B (en) * | 2016-12-27 | 2018-10-23 | 南昌大学 | A kind of structure and its adjusting method of the GaN base LED with colour change function |
| CN107135570B (en) * | 2017-04-18 | 2019-08-13 | 中国科学院半导体研究所 | The adjustable visible light communication LED light source of modulation bandwidth |
| CN212785947U (en) * | 2020-09-30 | 2021-03-23 | 广州晶彩光电科技有限公司 | Multi-chip integrated LED light source module capable of adjusting color temperature and brightness |
| CN112863317A (en) * | 2021-01-26 | 2021-05-28 | 南昌大学 | Optical experiment box with adjustable LED light source |
-
2022
- 2022-03-01 CN CN202210191929.1A patent/CN114269039B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61265806A (en) * | 1985-05-20 | 1986-11-25 | Toshiba Corp | Monitoring device for superconducting coil |
| JP2001313424A (en) * | 2000-04-28 | 2001-11-09 | Toshiba Lighting & Technology Corp | Light-emitting diode drive device |
Non-Patent Citations (2)
| Title |
|---|
| 《硅基金黄光LED器件性能及应用研究》;郭醒,王光绪;《人工晶体学报》;20201130;全文 * |
| 刘军林,莫春兰,张建立.《五基色LED照明光源技术进展》.《照明工程学报》.2017, * |
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