TWI548124B - Flip chip light emitting device and package structure thereof - Google Patents

Description

Flip-chip LED component and package structure thereof

A flip-chip light-emitting diode element and a package structure thereof, in particular, a flip-chip light-emitting diode element having a side protection layer and a fluorescent conversion layer and a package structure thereof.

The flip-chip light-emitting diode is proposed to solve the problem that the light-emitting diode barrier is inefficient in the conventional light-emitting diode structure; and the flip chip packaging technology is proposed to solve the traditional IC-calculated wafer for electricity. Sexual hypersensitivity issues. When a conventional IC die is packaged into a wafer, a wire bonding step is required, but the wire bonding step not only increases the complexity of the entire process, but also introduces an additional inductance effect, so the flip chip package technology is proposed to flip the crystal. Replace the board to replace the wire step. Subsequent to the same thinking, the flip chip packaging technology was applied to the flip-chip light-emitting diode to achieve the same effect.

Flip-chip LEDs and printed circuit boards are available in a variety of package styles, as described in the following.

Please refer to FIG. 1 , which illustrates a flow chart of a conventional flip chip type LED package process. The traditional flip-chip type photodiode process includes the following Step: In step 101, after a plurality of die 110 formed on a wafer is crystallized, the gaps of the die 110 are increased to facilitate a subsequent suction step; in step 102, a first A robot arm 210 and its vacuum nozzle 211 remove the die 110, and the die 110 has a bump 111. In step 103, the die 110 is flipped by the first robot arm 210; in step 104, After the die 110 is turned over, the second robot arm 220 and its vacuum nozzle 221 are followed by subsequent processes. In step 105, the bumps 111 on the die 110 are accurately positioned on the conductive contacts 121 on the flip-chip board 120. In step 106, the bumps 111 are heated to turn the die 110 and the flip chip. The board 120 is electrically connected; in step 107, the gap between the die 110 and the flip chip 120 is filled by a dispensing technique to complete the package fabrication of a chip 130; A baking is performed to cure the filling material at the time of dispensing. So far, the wafer 130 is a ready-to-use product. In practical applications, the wafer 130 is electrically connected to a circuit on a printed circuit board (PCB) by using a predetermined conductive structure on the flip-chip board 120.

Recently, in order to form a high-power white light-emitting diode, one of the commonly used methods is to use a light-emitting diode die to cooperate with a fluorescent conversion layer, and to form a fluorescent conversion layer twice by the light emission of the light-emitting diode die itself. Excitation, so that the two lights together to form a white light.

In the packaging process disclosed in FIG. 1 above, if the effect of dimming by using the wafer 130 and the fluorescent conversion layer is required, in the foregoing case, as shown in step 108, the fluorescent powder is mixed in the dispensing. The filler material is filled with a filler material and a phosphor powder mixture over the die 110. After the crystal grains 110 are emitted and transmitted through the phosphor powder, a dimming effect is produced.

In addition, there are other types of flip-chip LEDs and The method of encapsulating the phosphor powder, for example, placing the flip-chip light-emitting diode die in a cup body, and then pouring the phosphor powder into the cup body to cover the flip-chip light-emitting diode crystal grain, and in the flip chip type A phosphor conversion layer is formed on the light emitting diode crystal grains.

However, no matter what the way, the formation of the fluorescent conversion layer needs In the final process, the illuminating diode dies are refilled, which limits the freedom of the process. And an additional phosphor packaging process is required, which also causes an increase in manufacturing costs. Furthermore, since the LED chip itself does not have the functions of resisting moisture, oxidation, and external force, it is necessary to add a post-packaging process to form a final product in combination with the printed circuit board. Therefore, additional equipment such as wire bonding machine, flip chip machine and glue filling machine are required. This not only causes additional cost expenditures, but also leads to an increase in working hours, which leads to a decrease in production capacity and an increase in the non-performing rate.

In order to solve the above problems, the present invention provides a flip-chip type light emitting diode element and a package structure thereof. The flip-chip light-emitting diode element can protect the flip-chip light-emitting diode component from external stress and environment (temperature, humidity, oxygen, etc.) by forming a side protective layer, thereby prolonging the flip-chip light-emitting diode Body component life. Moreover, by the protective layer and the large-area conductive contact layer combined with the conductive bonding pad design, the flip-chip LED component itself can be used alone without the subsequent packaging process, and the manufacturing cost can be greatly saved.

One aspect of the present invention provides a flip-chip light emitting diode device including a first type semiconductor layer, a second type semiconductor layer, a first conductive contact layer, a second conductive contact layer, and a first Conductive bond pad, a second conductive bond a pad, an isolation layer, a protective layer, a fluorescent conversion layer, and a balanced electrode pattern layer. The second type semiconductor layer is formed on the first type semiconductor layer. The first conductive contact layer is formed on the first type semiconductor layer and does not contact the second type semiconductor layer, and the first conductive contact layer has an exposed surface. The first conductive bonding pad is electrically connected to the first conductive contact layer. The second conductive contact layer is formed on the second type semiconductor layer, and the second conductive contact layer has an exposed surface. The second conductive bonding pad is electrically connected to the first conductive contact layer. The isolation layer is formed between the first conductive contact layer and the second conductive contact layer to electrically isolate the first conductive contact layer from the second conductive contact layer. The protective layer is formed on a side of the first type semiconductor layer, the second type semiconductor layer, the first conductive contact layer, and the second conductive contact layer. The fluorescent conversion layer covers one surface of the first type semiconductor layer. The balanced electrode pattern layer is electrically connected to the first type semiconductor layer and the second type semiconductor layer, so that the current distribution through the flip chip type light emitting diode element is uniform. The area of the first conductive bonding pad and the area of the second conductive bonding pad are both greater than 10,000 micrometers square.

According to an embodiment, the fluorescent conversion layer covers at least one surface and sides of the protective layer, and the fluorescent conversion layer may include phosphor powder. In addition, the protective layer can form an accommodating space with the first type semiconductor layer for accommodating the fluorescent conversion layer. In addition, the fluorescent conversion layer can be a solid fluorescent sheet having a solid fluorescent sheet area greater than or equal to the area of the first type semiconductor layer.

Another aspect of the present invention provides a flip chip type LED device comprising a transparent substrate, a first type semiconductor layer, a second type semiconductor layer, a first conductive contact layer, and a second conductive contact. a layer, a first conductive bond pad, a second conductive bond pad, an isolation layer, a protective layer, and a balance electrode pattern layer. The first type semiconductor layer is formed on the transparent substrate, wherein the transparent substrate area is larger than the area of the first type semiconductor layer. The second type semiconductor layer is formed on the first type semiconductor layer. First A conductive contact layer is formed on the first type semiconductor layer and does not contact the second type semiconductor layer, and the first conductive contact layer has an exposed surface. The first conductive bonding pad is electrically connected to the first conductive contact layer. The second conductive contact layer is formed on the second type semiconductor layer, and the second conductive contact layer has an exposed surface. The second conductive bonding pad is electrically connected to the second conductive contact layer. The isolation layer is formed between the first conductive contact layer and the second conductive contact layer to electrically isolate the first conductive contact layer from the second conductive contact layer. The protective layer is formed on a side of the first type semiconductor layer, the second type semiconductor layer, the first conductive contact layer, and the second conductive contact layer. The balanced electrode pattern layer is electrically connected to the first type semiconductor layer and the second type semiconductor layer, so that the current distribution through the flip chip type light emitting diode element is uniform. The area of the first conductive bonding pad and the area of the second conductive bonding pad are both greater than 10,000 micrometers square.

According to an embodiment, the flip-chip light emitting diode element further comprises a fluorescent conversion layer. The fluorescent conversion layer may cover one surface of the transparent substrate or cover at least one surface and the side of the transparent substrate; and the fluorescent conversion layer may comprise fluorescent powder; or the fluorescent conversion layer is a solid fluorescent sheet, solid fluorescent The sheet area is greater than or equal to the transparent substrate area. Further, the transparent substrate area is larger than the area of the first type semiconductor layer. In addition, the flip-chip LED component may further comprise a metal reflective layer formed between the second semiconductor layer and the second conductive bonding pad. Moreover, the first conductive bonding pad and the second conductive bonding pad or the second conductive bonding pad and the first conductive bonding pad have an area ratio of 0.1:1 to 1:1.

Another aspect of the present invention provides a package structure using the above-described flip-chip light-emitting diode element, comprising a flip-chip light-emitting diode element, a bonding layer, and a printed circuit board. The two bonding layers are respectively formed on the first conductive bonding pad and the first conductive bonding pad. Printed circuit board has a relative to The first conductive bonding pad and the second conductive bonding pad are disposed at the first circuit bonding portion and the second circuit bonding portion, and the first circuit bonding portion and the second circuit bonding portion are respectively coupled to the first conductive bonding through the two bonding layers The pad and the second conductive bond pad are electrically connected.

According to an embodiment, the first circuit junction area and the second circuit The total joint area is less than or equal to 2 times the total area of the flip-chip light-emitting diode element. In addition, the first and second conductive bonding pads are electrically connected to the first and second circuit bonding portions to form a solder paste, and the thickness of the solder paste is greater than or equal to 20 micrometers. After bonding, the solder paste height is less than the flip chip type. 30% of the height of the LED component or no creepage.

101-108‧‧‧Steps

110‧‧‧ grain

111‧‧‧Bumps

120‧‧‧Foiled Adapter Plate

121‧‧‧Electrical contacts

130‧‧‧ wafer

210‧‧‧First robotic arm

211, 221‧‧‧ vacuum nozzle

220‧‧‧Second robotic arm

309‧‧‧Second conductive bonding pad

310‧‧‧ accommodating space

311‧‧‧Balance electrode pattern layer

400‧‧‧Flip-chip LED components

401‧‧‧First type semiconductor layer

402‧‧‧Second type semiconductor layer

403‧‧‧First conductive contact layer

404‧‧‧Second conductive contact layer

405‧‧‧Isolation

300‧‧‧Flip-chip LED components

301‧‧‧First type semiconductor layer

301a‧‧‧ surface

302‧‧‧Second type semiconductor layer

303‧‧‧First conductive contact layer

304‧‧‧Second conductive contact layer

305‧‧‧Isolation

306‧‧‧Protective layer

307‧‧‧Fluorescent conversion layer

308‧‧‧First conductive bonding pad

406‧‧‧Protective layer

407‧‧‧Fluorescent conversion layer

408‧‧‧First conductive bonding pad

409‧‧‧Second conductive bonding pad

410‧‧‧Transparent substrate

410a‧‧‧ surface

411‧‧‧Metal reflector

500‧‧‧Package structure

501‧‧‧Printed circuit board

502a‧‧‧First circuit joint

502b‧‧‧Second circuit junction

503‧‧‧ joint layer

FIG. 1 is a flow chart showing a conventional flip-chip LED package process.

FIG. 2 is a schematic view showing the structure of an embodiment of a flip chip type LED device according to the present invention.

FIG. 3 is a schematic view showing an embodiment of a balanced electrode pattern layer according to FIG. 2.

FIG. 4 is a schematic view showing another embodiment of the combined structure of the protective layer and the fluorescent conversion layer according to FIG. 2.

FIG. 5 is a schematic view showing still another embodiment of the combined structure of the protective layer and the fluorescent conversion layer according to FIG. 2.

FIG. 6 is a schematic view showing the structure of another embodiment of the flip chip type LED device according to the present invention.

Figure 7 is a diagram showing another combination of the protective layer and the fluorescent conversion layer according to Figure 6 Schematic diagram of the example.

FIG. 8 is a schematic view showing an embodiment of a package structure of a flip chip type LED device according to the present invention.

FIG. 9 is a schematic view showing another embodiment of a package structure of a flip-chip type LED device according to FIG. 8.

Please refer to FIG. 2 and FIG. 3, and FIG. 2 is an embodiment according to the present invention. A schematic diagram of the structure of the flip-chip light-emitting diode element 300 in the example. Fig. 3 is a view showing an embodiment of the balanced electrode pattern layer 311 according to Fig. 2. In the second embodiment, the flip-chip LED device 300 includes a first semiconductor layer 301, a second semiconductor layer 302, a first conductive contact layer 303, a second conductive contact layer 304, and an isolation layer. 305. A protective layer 306, a phosphor conversion layer 307, a first conductive bonding pad 308, a second conductive bonding pad 309, and a balanced electrode pattern layer 311 (refer to FIG. 3). The second type semiconductor layer 302 is formed on the first type semiconductor layer 301, and the first conductive contact layer 303 is formed on the first type semiconductor layer 301 and does not contact the second type semiconductor layer 302. The second conductive contact layer 304 is formed on the second type semiconductor layer 302.

The first conductive contact layer 303 and the second conductive contact layer 304 each have a The exposed surface, one of which acts to bond with the conductive adhesive. Solder paste can be used for the conductive paste, and the type of the conductive paste is not limited and can be in various possible forms.

The isolation layer 305 is formed on the first conductive contact layer 303 and the second conductive connection Between the contact layers 304, the first conductive contact layer 303 and the second conductive contact layer 304 are electrically isolated.

The fluorescent conversion layer 307 covers one surface of the first type semiconductor layer 301 301a, thereby serving as a dimming, enables the flip-chip LED element 300 to emit different colors of light, such as emitting white light.

In this embodiment, the first conductive contact layer 303 and the second conductive contact layer 304 has a wide range of exposed areas. Thereby, the light-emitting diode can be used for heat dissipation, or can be used as a conductive adhesive or for other bonding processes. In addition, the first type semiconductor layer 301 can be a p-type semiconductor layer, and the second type semiconductor layer 302 can be an n-type semiconductor layer, or vice versa. The materials of the first type semiconductor layer 301 and the second type semiconductor layer 302 may be aluminum gallium arsenide, gallium arsenide phosphide, gallium phosphide, indium gallium phosphide, indium gallium phosphide, indium gallium nitride, nitrogen. Gallium, aluminum phosphide, zinc selenide, tantalum carbide and other materials.

The protective layer 306 may be formed on the first type semiconductor layer 301, the second type semiconductor layer 302, the first conductive contact layer 303, and the second conductive contact by spin coating, evaporation, or sputtering. The sides of layer 304. The protective layer 306 is intended to form a protective film on the outside of the flip-chip light-emitting diode element 300, so that the flip-chip light-emitting diode element 300 is protected from external stress and environment (temperature, humidity, oxygen). In addition, due to the formation of the protective layer 306, the flip-chip LED component 300 itself can be dispensed with the subsequent complicated potting process to form a separately usable component, which not only saves cost, but also increases the flexibility of application in the process.

The first conductive bonding pad 308 and the second conductive bonding pad 309 are electrically connected to the first conductive contact layer 303 and the second conductive contact layer 304 respectively, and the first conductive bonding pad 308 and the second conductive bonding pad 309 are expandable. The exposed area of a conductive contact layer 303 and the second conductive contact layer 304 contributes to the light emitting diode The heat dissipation can also be used as a coating conductive paste or other bonding process, so that the flip-chip LED component 300 can form a separately usable light-emitting component, and can be combined with a subsequent assembly structure (a printed circuit board or a circuit base). Block, etc.) use. The first conductive bond pad 308 and the second conductive bond pad 309 can be adjusted in size according to requirements, and the ratio of the area to each other can be 0.1:1 to 1:1. The area of the first conductive bond pad 308 and the area of the second conductive bond pad 309 are both greater than 10,000 micrometers square, and the protective layer 306 is used to form the flip-chip light-emitting diode element 300 so that it can be separated by a complicated process such as subsequent packaging. A light-emitting element that can be used. It should be noted that in the above embodiments, the first conductive contact layer 303 and the second conductive contact layer 304 have a sufficiently large exposed area and can be used alone with the subsequent assembled structure, and then coupled with the first conductive bonding pad 308 and the second conductive The bonding pad 309 can increase the elasticity of use.

The balanced electrode pattern layer 311 is electrically connected to the first type semiconductor layer 301 and the second type semiconductor layer 302 to uniformly distribute current in the first type semiconductor layer 301 and the second type semiconductor layer 302, thereby increasing luminous efficiency. The balanced electrode pattern layer 311 can also be electrically or separately connected to the first conductive contact layer 303 or the second conductive contact layer 304 of the flip-chip LED element 300 itself, and can be electrically connected to the first or the first. Conductive bond pad 308 and second conductive bond pad 309. The shape of the balanced electrode pattern layer 311 is also not limited, and may be any geometric shape. In an embodiment, the shape of the balance electrode layer pattern layer 311 is as shown in FIG. In FIG. 3, the balance electrode pattern layer 311 is electrically connected to the first conductive contact layer 303 and the second conductive contact layer 304, and has an interdigitated extension structure, a first conductive contact layer 303 and a second conductive contact layer. 304 electrically connecting the first conductive bonding pad 308 and the second conductive bonding pad 309. Thereby, the current distribution can be prevented from being excessively concentrated, and the current distribution can be made more uniform.

Please refer to FIG. 4 , which illustrates the protective layer 306 according to FIG. 2 . A schematic diagram of another embodiment of a combination with a fluorescent conversion layer 307. In order to make the light emission more uniform, the fluorescent conversion layer 307 may cover not only the surface 301a of the first type semiconductor layer 301 but also the side of the protective layer 306. Thereby, the proportion of the fluorescent conversion layer 307 covering the flip-chip light-emitting diode element 300 can be adjusted to obtain a more uniform dimming effect.

Please refer to FIG. 5 , which shows a protective layer 306 according to FIG. 2 . A schematic diagram of still another embodiment of the combined structure with the fluorescent conversion layer 307. When the protective layer 306 is formed, the protective layer 306 is protruded from the side of the first type semiconductor layer 301, so that an accommodating space 310 is formed between the protective layer 306 and the first type semiconductor layer 301 for accommodating the fluorescent conversion layer. For use in 307, in one embodiment, the fluorescent conversion layer 307 can be formed by filling the accommodating space 310 with phosphor powder. The fluorescent conversion layer 307 can also be disposed in the accommodating space 310 by using a solid fluorescent sheet, thereby simplifying the process.

Please refer to FIG. 6 , which shows a flip-chip illumination according to the present invention. A schematic structural view of another embodiment of a diode element. In the sixth embodiment, the flip-chip LED device 400 includes a transparent substrate 410, a first semiconductor layer 401, a second semiconductor layer 402, a first conductive contact layer 403, and a second conductive contact layer. 404, an isolation layer 405, a protective layer 406, a phosphor conversion layer 407, a first conductive bonding pad 408, a second conductive bonding pad 409, and a balanced electrode pattern layer (not shown). The first type semiconductor layer 401 is formed on the transparent substrate 410, and the area of the transparent substrate 410 is larger than the area of the first type semiconductor layer 401. Second type semiconductor layer 402 The first conductive contact layer 403 is formed on the first type semiconductor layer 401 and does not contact the second type semiconductor layer 402. The second conductive contact layer 404 is formed on the second doped semiconductor layer 402.

The first conductive contact layer 403 and the second conductive contact layer 404 each have an exposed surface, and one of the functions is for bonding with the conductive adhesive.

The isolation layer 405 is formed between the first conductive contact layer 403 and the second conductive contact layer 404 to electrically isolate the first conductive contact layer 403 from the second conductive contact layer 404.

The fluorescent conversion layer 407 covers one surface 410a of the transparent substrate 410, thereby serving as a dimming function, so that the flip-chip LED element 400 can emit different colors of light, for example, emit white light.

The protective layer 406 may be formed on the first type semiconductor layer 401, the second type semiconductor layer 402, the first conductive contact layer 403, and the second conductive contact by spin coating, evaporation, or sputtering. The sides of layer 404. The protective layer 406 is intended to form a protective film on the outside of the flip-chip light-emitting diode element 400, so that the flip-chip light-emitting diode element 400 is protected from external stress and environment (temperature, humidity, oxygen). In addition, due to the formation of the protective layer 406, the flip-chip LED component 400 itself can be dispensed with the subsequent complicated potting process to form a separately usable component, which not only saves cost, but also increases flexibility in application on the process.

In the flip-chip LED device 400, a first conductive pad 408 and a second conductive pad 409 are electrically connected to the first conductive contact layer 403 and the second conductive contact layer 404, respectively. The first conductive contact layer 403 is expandable by the first conductive bond pad 408 and the second conductive bond pad 409 And the exposed area of the second conductive contact layer 404, which helps the light emitting diode to dissipate heat, can also be used as a conductive adhesive or other bonding process, and the flip-chip LED component 400 can be used independently. The light-emitting element can be used in conjunction with a subsequent assembly structure (a printed circuit board or a circuit base, etc.). The first conductive bond pad 408 and the second conductive bond pad 409 can be adjusted in size according to requirements, and the ratio of the area to each other can be 0.1:1 to 1:1. The area of the first conductive bonding pad 408 and the area of the second conductive bonding pad 409 are both greater than 10,000 micrometers square, and the protective layer 406 is used together to form the flip-chip LED component 400 so that it can be separated by a complicated process such as subsequent packaging. A light-emitting element that can be used. As in the foregoing embodiments, the first conductive contact layer 403 and the second conductive contact layer 404 have a sufficiently large exposed area and can be used alone with the subsequent assembled structure, and then coupled with the first conductive bond pad 408 and the second conductive bond. Pad 409 can increase the flexibility of use.

The balanced electrode pattern layer is electrically connected to the first type semiconductor layer 401 and the second type semiconductor layer 402 to uniformly distribute current in the first type semiconductor layer 401 and the second type semiconductor layer 402, thereby increasing luminous efficiency. In this embodiment, the structure of the balanced electrode pattern layer is similar to that of the balanced electrode pattern layer 311 of the foregoing embodiment, and will not be described again.

In addition, in the flip-chip LED device 400 described above, a metal reflective layer 411 can be added between the second conductive contact layer 404 and the second conductive pad 409 to increase the light extraction efficiency.

Referring to FIG. 7, FIG. 7 is a schematic diagram showing another embodiment of a combined structure of the protective layer 406 and the fluorescent conversion layer 407 according to FIG. In order to make the light emission more uniform, the fluorescent conversion layer 407 can cover not only the surface of the transparent substrate 410. The surface 410a can also be extended over the side surface of the transparent substrate 410. Thereby, the proportion of the fluorescent conversion layer 407 covering the flip-chip light-emitting diode element 400 can be adjusted to obtain a more uniform dimming effect. In addition, the fluorescent conversion layer 407 can use a solid fluorescent sheet having an area larger than that of the transparent substrate 410. Thereby, the complicated sealing process in the conventional use of the fluorescent powder can be omitted, and the convenience in the process is increased.

Please refer to FIG. 8. FIG. 8 is a schematic diagram showing an embodiment of a package structure 500 of a flip-chip LED device 400 according to the present invention. In Fig. 6, the flip-chip light-emitting diode element 400 itself is a separately usable light-emitting element. In this embodiment, the package structure 500 in which the flip-chip LED device 400 is combined with a printed circuit board 501 is disclosed. It should be noted that the flip-chip LED device 400 can also be combined with other forms of substrates. Printed circuit boards are limited. The flip-chip LED device 400 has a first conductive bond pad 408 and a second conductive bond pad 409. The printed circuit board 501 has a first circuit bonding portion 502a and a second circuit bonding portion 502b corresponding to the positions of the first conductive bonding pads 408 and the second conductive bonding pads 409, respectively. In order to enable the flip-chip LED device 400 to be connected to the printed circuit board 501, respectively, between the first conductive bonding pad 408 and the first circuit bonding portion 502a, and the second conductive bonding pad 409 and the second circuit. A bonding layer 503 is disposed between the joint portions 502b. The bonding layer 503 may be bonded in any manner such as a eutectic, a conductive paste, a bump, or a solder paste process. In this embodiment, when the first conductive bonding pad 408 and the second conductive bonding pad 409 are electrically connected to the bonding layer 503 of the first circuit bonding portion 502a and the second circuit bonding portion 502b, the thickness of the paste is greater than or equal to 20 microns, and after bonding, the solder paste height is less than the flip-chip light The polar body element 400 is 30% high or has no creepage.

Referring to FIG. 9 , FIG. 9 is a schematic diagram showing another embodiment of a package structure 500 according to the flip-chip LED device 400 of FIG. 8 . In FIG. 9, the total area of the first circuit junction portion 502a and the second circuit junction portion 502b is less than or equal to twice the total area of the flip-chip light-emitting diode element 400.

The flip-chip light-emitting diode elements (300, 400) disclosed in the above embodiments are formed by using deposition, exposure, development, etching, etc. in the wafer fabrication process, that is, forming the first as positive and negative electrodes. Conductive contact layer (303, 403), second conductive contact layer (304, 404), isolation layer 305, and protective layer 306. Then, after being cut, it can be used as a light-emitting element structure that can be used independently. However, the conventional flip-chip type light-emitting diode cannot be used alone in the form of bare crystal because of the design of the isolation layer 305 and the protective layer 306. Thereby, the flip-chip LED component (300, 400) of the invention can save the steps of crystal expansion, flipping, transposition, microwave, dispensing and baking in the conventional flip chip packaging process and related expensive equipment. , can greatly save manufacturing costs. In addition, the time cost caused by the complicated steps in the conventional flip-chip LED packaging process can be saved, thereby increasing the throughput.

In summary, the present invention provides a flip-chip light emitting diode element and a package structure thereof. The flip chip type LED device of the present invention has the following advantages:

1. With large electrode structure, it can increase heat dissipation and reduce light attenuation.

2. The protective layer on the side can enhance the reliability and reliability of the flip-chip LED component from external stress and environmental influence, thereby increasing the life of the flip-chip LED component.

3. An isolation layer is disposed between the first conductive contact layer and the second conductive contact layer for electrical isolation.

4. The protective layer structure can have various designs, and the fluorescent conversion layer can be combined to obtain different dimming effects; the fluorescent conversion layer packaging process can be simplified, and the additional equipment cost can be reduced.

5. The wafer process stage directly forms a flip-chip light-emitting diode component that can be used alone, which can eliminate the complicated packaging process, thereby reducing unnecessary investment in packaging equipment and greatly saving manufacturing costs.

6. The large electrode can be connected to the printed circuit board by using a eutectic, conductive paste, bump, or solder paste process to conduct.

7. A balanced electrode pattern layer can be added to make the current distribution more uniform and increase the luminous efficiency.

400‧‧‧Flip-chip LED components

401‧‧‧First type semiconductor layer

402‧‧‧Second type semiconductor layer

403‧‧‧First conductive contact layer

404‧‧‧Second conductive contact layer

405‧‧‧Isolation

406‧‧‧Protective layer

407‧‧‧Fluorescent conversion layer

408‧‧‧First conductive bonding pad

409‧‧‧Second conductive bonding pad

410‧‧‧Transparent substrate

410a‧‧‧ surface

411‧‧‧Metal reflector

Claims (10)

A flip-chip light emitting diode device comprising: a first type semiconductor layer; a second type semiconductor layer formed on the first type semiconductor layer; and a first conductive contact layer formed on the first type semiconductor And not contacting the second type semiconductor layer, wherein the first conductive contact layer has a bare surface; a first conductive bonding pad electrically connected to the first conductive contact layer; and a second conductive contact layer, Formed on the second type semiconductor layer, and the second conductive contact layer has a bare surface; a second conductive bonding pad electrically connected to the second conductive contact layer; an isolation layer formed on the first Between the conductive contact layer and the second conductive contact layer, the first conductive contact layer and the second conductive contact layer are electrically insulated; a protective layer formed on the first type semiconductor layer, the second a semiconductor layer, a side of the first conductive contact layer and the second conductive contact layer; a fluorescent conversion layer covering at least one surface and a side of the first semiconductor layer; and a balance Electrode pattern layer, electrical Connecting the first type semiconductor layer and the second type semiconductor layer, so that a current distribution through the flip-chip light emitting diode element is uniform; wherein an area of the first conductive bonding pad and the second conductive bonding pad The area is larger than 10,000 micrometers square. The flip-chip light emitting diode device of claim 1, wherein the fluorescent conversion layer comprises a phosphor powder or a solid fluorescent sheet, the solid fluorescent sheet area being greater than or equal to the first type semiconductor layer area. The flip-chip LED component of claim 1, wherein the protective layer and the first semiconductor layer form an accommodating space for accommodating the fluorescent conversion layer. The flip-chip LED component of claim 1, further comprising: a transparent substrate formed on the first type semiconductor layer, wherein the transparent substrate area is larger than the area of the first type semiconductor layer. A flip-chip light-emitting diode element comprising: a transparent substrate; a first-type semiconductor layer formed on the transparent substrate, wherein the transparent substrate has a larger area than the first-type semiconductor layer; and a second-type semiconductor layer Forming on the first type semiconductor layer; a first conductive contact layer formed on the first type semiconductor layer and not contacting the second type semiconductor layer, wherein the first conductive contact layer has an exposed surface; a first conductive bonding pad electrically connected to the first conductive contact layer; a second conductive contact layer formed on the second type semiconductor layer, and the second conductive contact layer has an exposed surface; a conductive bonding pad electrically connected to the second conductive contact layer; an isolation layer formed between the first conductive contact layer and the second conductive contact layer, thereby electrically isolating the first conductive contact layer from the a second conductive contact layer; a protective layer formed on a side of the first type semiconductor layer, the second type semiconductor layer, the first conductive contact layer and the second conductive contact layer; a balanced electrode pattern layer electrically connected to the first type semiconductor layer and the second type semiconductor layer, so that current distribution through the flip chip type LED element is uniform; wherein the area of the first conductive pad And the area of the second conductive bonding pad is greater than 10000 micrometers, and the first conductive bonding pad and the second conductive bonding pad or the second conductive bonding pad and the first conductive bonding pad have an area ratio of 0.1:1 to 1 :1. The flip-chip LED device of claim 5, further comprising: a fluorescent conversion layer covering a surface of the transparent substrate or covering at least one surface and a side of the transparent substrate; wherein The fluorescent conversion layer comprises a phosphor powder or a solid fluorescent sheet, and the solid fluorescent sheet area is greater than or equal to the transparent substrate area. The flip-chip LED device of claim 5, further comprising: a metal reflective layer formed between the second semiconductor layer and the second conductive bonding pad. A package structure using the flip-chip light-emitting diode element of claim 5, comprising: a flip-chip light-emitting diode element; and two bonding layers respectively formed on the flip-chip light-emitting diode element a conductive bonding pad and the second conductive bonding pad; and a printed circuit board having a first circuit junction portion with respect to the first conductive bonding pad and the second conductive bonding pad respectively a second circuit junction portion, wherein the first and second circuit junction portions are electrically connected to the first and second conductive bonding pads through the two bonding layers. The package structure of claim 8, wherein the total area of the first circuit joint portion and the second circuit joint portion is less than or equal to 2 times the total area of the flip-chip light-emitting diode element. The package structure of claim 8, wherein the bonding layer electrically connecting the first and second conductive pads to the first and second circuit bonding portions uses a solder paste, and the thickness of the paste is 20 μm or more, and After bonding, the solder paste has a height less than 30% of the height of the flip-chip LED component or no creepage.