CN114260590A - SiC cutting device based on multi-power micro-jet laser and cutting method thereof - Google Patents
SiC cutting device based on multi-power micro-jet laser and cutting method thereof Download PDFInfo
- Publication number
- CN114260590A CN114260590A CN202111493888.3A CN202111493888A CN114260590A CN 114260590 A CN114260590 A CN 114260590A CN 202111493888 A CN202111493888 A CN 202111493888A CN 114260590 A CN114260590 A CN 114260590A
- Authority
- CN
- China
- Prior art keywords
- cutting
- micro
- sic
- crystal ingot
- jet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005520 cutting process Methods 0.000 title claims abstract description 151
- 238000000034 method Methods 0.000 title claims abstract description 34
- 239000013078 crystal Substances 0.000 claims abstract description 108
- 230000008569 process Effects 0.000 claims description 15
- 238000002360 preparation method Methods 0.000 claims 1
- 238000012545 processing Methods 0.000 abstract description 26
- 230000006378 damage Effects 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 7
- 230000009286 beneficial effect Effects 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- 230000005540 biological transmission Effects 0.000 description 8
- 230000001360 synchronised effect Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000003698 laser cutting Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 239000004918 carbon fiber reinforced polymer Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000012043 crude product Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Images
Landscapes
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The application relates to a SiC cutting device based on multi-power micro-jet laser and a cutting method thereof, belonging to the field of semiconductor material processing. It mainly comprises: the fixing module is used for fixing the SiC crystal ingot, driving the SiC crystal ingot to perform self-rotation at a preset speed and driving the SiC crystal ingot to perform stepping; and a cutting module for cutting the SiC ingot; the cutting module comprises a multi-power micro-jet laser head which is used for cutting the SiC crystal ingot at different cutting stages through a plurality of micro-jet lasers with different power. The beneficial effects of this application are that, utilize a plurality of little efflux laser of the power size difference of many power little efflux laser head, to different cutting stages the SiC crystal ingot cuts, can guarantee under the prerequisite of cutting efficiency, improves SiC cutting quality effectively, reduces the damage, improves the yield.
Description
Technical Field
The invention relates to the technical field of processing of semiconductor materials, in particular to a SiC cutting device based on multi-power micro-jet laser and a cutting method thereof.
Background
SiC is taken as a typical hard and brittle material, the Mohs hardness of SiC is 9.2-9.5, which is second to that of diamond, so that the processing and manufacturing process is very difficult. Cutting is the primary key process for manufacturing the SiC single crystal substrate, and the processing quality of the cutting directly affects the material cutting loss, the material removal amount of the subsequent process, the final processing quality (surface roughness and flatness), the product yield, the processing cost, and the like. With the development of crystal growth technology and the continuous increase of market demand, the demand of large-diameter SiC single crystal substrates is increasing; at present, the transition of the SiC single crystal substrate from 6 inches to 8 inches brings a serious challenge to the traditional wafer cutting technology, and how to cut the SiC single crystal with high efficiency, high quality, low cost, low damage and high yield rate becomes an important research direction in the field of processing the SiC single crystal substrate at present.
In the prior art, when the micro-jet laser is used for cutting the SiC crystal ingot, a single-power micro-jet laser head is used. If the laser power is too high, the cutting is too rough, which is not beneficial to cutting the SiC single crystal with high quality, low damage and high yield; and if the adopted laser power is lower, the cutting efficiency is lower, and the cost is higher.
Disclosure of Invention
Aiming at the problems in the prior art, the application mainly provides a SiC cutting device based on multi-power micro-jet laser and a cutting method thereof.
In order to achieve the above object, the present application adopts a technical solution that: provided is a SiC cutting device based on multi-power micro-jet laser, comprising: the fixing module is used for fixing the SiC crystal ingot, driving the SiC crystal ingot to perform self-rotation at a preset speed and driving the SiC crystal ingot to perform stepping; and a cutting module for cutting the SiC ingot; the cutting module comprises a multi-power micro-jet laser head which is used for cutting the SiC crystal ingot at different cutting stages through a plurality of micro-jet lasers with different power.
Optionally, the SiC cutting device based on multi-power micro-jet laser of the present application further includes a control module, which is used for controlling the cutting module to cut and controlling the fixing module to perform self-rotation and stepping.
Optionally, the control module controls the fixed module to step according to a preset first rule; the control module includes: and the laser control module is used for cutting the SiC crystal ingot by utilizing one of the multi-stage micro-jet lasers according to a preset second rule, and continuously carrying out corresponding switching on the micro-jet lasers after the fixed module drives the SiC crystal ingot to complete stepping.
Optionally, the fixing module includes a first fixing submodule for fixing the seed crystal portion of the SiC ingot and driving the seed crystal portion of the SiC ingot to perform self-rotation and stepping; the second fixing submodule is used for fixing the cut part of the SiC crystal ingot and driving the cut part of the SiC crystal ingot to rotate and step synchronously with the first fixing submodule;
another technical scheme adopted by the application is as follows: the cutting method of the SiC cutting device based on the multi-power micro-jet laser comprises the following steps: fixing the SiC crystal ingot by using a fixing module and driving the SiC crystal ingot to rotate automatically at a preset speed; cutting the SiC crystal ingot in a first stage by using one micro-jet laser in a multi-power micro-jet laser head; and stepping the SiC crystal ingot to be under the next micro-jet laser by using the fixed module, and correspondingly switching the micro-jet laser and then cutting at the next stage.
Optionally, the multi-power micro-jet laser head comprises two micro-jet lasers; the process of cutting the SiC crystal ingot in the first stage by using one micro-jet laser in the multi-power micro-jet laser head comprises the steps of roughly cutting the SiC crystal ingot in the first stage to a preset position by using a micro-jet laser with higher power; and correspondingly switching the micro-jet laser and then cutting the SiC crystal ingot in the next stage, wherein the process of switching the micro-jet laser in the next stage comprises the step of switching the multi-power micro-jet laser head to the micro-jet laser with lower power to perform fine cutting on the SiC crystal ingot in the second stage until the cutting is finished.
The technical scheme of the application can reach the beneficial effects that: the application designs a SiC cutting device based on multi-power micro-jet laser and a cutting method thereof. The device utilizes a plurality of micro-jet lasers with different power of the multi-power micro-jet laser head to cut the SiC crystal ingot at different cutting stages, and effectively improves the SiC cutting quality, reduces the damage and improves the yield on the premise of ensuring the cutting efficiency.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to these drawings without inventive exercise.
FIG. 1 is a schematic diagram comparing conventional laser cutting with micro-jet laser cutting;
FIG. 2 is a schematic diagram of an embodiment of a multi-power micro-jet laser based SiC cutting device according to the present application;
FIG. 3 is a schematic view of a stationary module in an embodiment of a multi-power microfluidic laser based SiC cutting device of the present application;
FIG. 4 is a schematic view of a stationary module in an embodiment of a multi-power microfluidic laser based SiC cutting device of the present application;
fig. 5 is a schematic diagram of an embodiment of the SiC cutting method based on multi-power micro-jet laser according to the present application.
With the above figures, there are shown specific embodiments of the present application, which will be described in more detail below. These drawings and written description are not intended to limit the scope of the inventive concepts in any manner, but rather to illustrate the inventive concepts to those skilled in the art by reference to specific embodiments.
Detailed Description
The following detailed description of the preferred embodiments of the present application, taken in conjunction with the accompanying drawings, will provide those skilled in the art with a better understanding of the advantages and features of the present application, and will make the scope of the present application more clear and definite.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The laser micro-water jet is an advanced technology for guiding laser to realize processing by the fine water jet, and is also called as a laser micro-water jet processing technology. The technology focuses laser beams and then couples the laser beams into high-speed water jet, and the laser is totally reflected on the inner surface of the water jet due to the difference of refractive indexes of water and air, so that concentrated laser energy is limited in the water jet. During processing, the laser beam focused to the nozzle position forms total reflection on the inner wall of the micro water column, and then generates an energy beam with uniformly distributed cross-sectional energy, and the energy beam is guided to the surface of the workpiece to realize workpiece processing. The method is an industry leading solution in the industries of aircraft engine hot end part manufacturing, aircraft CFRP structural part processing, natural diamond cutting, large-scale integrated circuit wafer cutting and the like.
The advantages of laser microwaterjet over conventional laser machining techniques include: (1) no focusing is required. The non-sheet surface processing has no problem, 3D cutting can be carried out, and the processing depth can reach several centimeters; (2) the micro water jet keeps the laser beams in the parallel water jet to be completely parallel, and the cylindrical laser beams realize parallel edge cutting, so that high-quality wall processing and edge cutting are ensured; (3) the aspect ratio is large, the trimming width below 30 mu m can be realized, and deeper holes can be drilled with minimum material loss; (4) the cooling effect of the water jet avoids thermal damage and material change so as to maintain the designed fatigue strength; (5) the water film eliminates the accumulation and pollution of processing waste particles, and a protective layer on the processing surface is not needed; (6) the high kinetic energy of the water jet dissipates and melts the waste particles, avoids burrs, and cleans the high quality formed work surface, as shown in fig. 1.
However, when the micro-jet laser is used for cutting the SiC crystal ingot in the prior art, a single-power micro-jet laser head is used. If the laser power is too high, the capability of discharging cutting waste materials by water flow is reduced along with the increase of the processing depth because the aperture is reduced, the appearance of the side wall cannot be ensured, and the cutting is too rough, so that the cutting of the SiC single crystal is not beneficial to high quality, low damage and high yield; and if the adopted laser power is lower, the cutting efficiency is lower, and the cost is higher.
This application utilizes a plurality of little efflux lasers of the power size difference of many power little efflux laser head, to different cutting stages the SiC crystal ingot cuts, can guarantee to cut under the prerequisite of efficiency, improves SiC cutting quality effectively, reduces low damage, improves the yield.
The following describes the technical solutions of the present application and how to solve the above technical problems with specific embodiments. The following several specific embodiments may be combined with each other, and details of the same or similar concepts or processes may not be repeated in some embodiments. Embodiments of the present application will be described below with reference to the accompanying drawings.
Fig. 1 shows an embodiment of a SiC cutting device based on multi-power micro-jet laser according to the present application.
In the specific embodiment shown in fig. 1, the SiC cutting device of the multi-power micro-jet laser of the present application mainly includes: the fixing module is used for fixing the SiC crystal ingot, driving the SiC crystal ingot to perform self-rotation at a preset speed and driving the SiC crystal ingot to perform stepping; and a cutting module for cutting the SiC ingot; the cutting module comprises a multi-power micro-jet laser head which is used for cutting the SiC crystal ingot at different cutting stages through a plurality of micro-jet lasers with different power.
The device of the application utilizes a plurality of micro-jet lasers with different power sizes of the multi-power micro-jet laser head to cut SiC crystal ingots in different cutting stages, so that the cutting efficiency can be guaranteed, the cutting quality of the SiC crystal ingots is effectively improved, the damage is reduced, and the yield is improved.
In one embodiment of the present application, the fixing module includes an automatic rotation module and a manual stepping module. The automatic rotation module controls the fixing module to drive the SiC crystal ingot to perform self-rotation at a preset speed, and the rotation speed can be adjusted as required; and the manual stepping module can control the fixed module to drive the SiC crystal to move to different cutting positions in different cutting stages.
In a specific embodiment of the present application, the SiC cutting device of the multi-power micro-jet laser further includes a control module, configured to control the cutting module to cut, and control the fixing module to perform self-rotation and stepping.
In one embodiment of the present application, the control module controls the fixed module to perform stepping according to a preset first rule, for example, controls the fixed module to move from a first predetermined position to a second predetermined position after the first stage cutting is completed, so that the SiC ingot is under the micro-jet laser for the second stage cutting, so as to perform the second stage cutting on the SiC ingot.
In an embodiment of the application, the control module includes a laser control module, configured to cut the SiC ingot by using one of the multiple stages of micro-jet lasers according to a preset second rule, and continue to switch the micro-jet lasers after the fixed module drives the SiC ingot to complete stepping.
In a specific embodiment of the present application, the multi-power micro-jet laser head comprises two micro-jet lasers; the second preset rule is that the SiC crystal ingot is roughly cut to a preset position in the first stage by using the micro-jet laser with higher power; and switching the multi-power micro-jet laser head to a micro-jet laser with lower power to perform second-stage fine cutting on the SiC crystal ingot until the cutting is finished.
The micro-jet laser head with high power is utilized to carry out rough cutting, so that primary cutting can be carried out more quickly, and a cut can be punched as soon as possible. And a micro-jet laser head with lower power is used for fine cutting for fine carving, so that the processing is finer and the surface of the ingot is smoother.
In one specific example of the present application, the predetermined position is a critical position where L ═ 0.7R, (where L is the depth of cut and R is the radius of the processed ingot), and the microjet laser is switched from 200W to 100W. In the cutting process, the processing difficulty is increased along with the increase of the cutting depth, the notch is changed in a V shape, the precision is reduced, two sides of the notch are narrowed at the position, the processing precision and the flatness of the side wall are reduced due to the processing of a 200W laser head, and therefore the 100W laser needs to be switched.
In one embodiment of the present application, the holding module includes a first holding submodule for holding the seed portion of the SiC ingot and for driving the seed portion of the SiC ingot to spin and step; and the second fixing submodule is used for fixing the cut part of the SiC crystal ingot and driving the cut part of the SiC crystal ingot to rotate and step synchronously with the first fixing submodule.
In an embodiment of the present application, the SiC ingot is of a conductive type, and the fixing module includes, as shown in fig. 2, a first rotating means, a first magnetic chuck, a telescopic table, a second magnetic chuck, a second rotating means, a stress controller, and a synchronous transmission means;
one end of an opening of the first magnetic chuck is used for adsorbing and fixing a seed crystal part of the conductive SiC crystal ingot, the other end of the opening of the first magnetic chuck is connected with the first rotating device, the second magnetic chuck is arranged opposite to the first magnetic chuck and used for fixing a cut part of the conductive SiC crystal ingot, the first rotating device, the second rotating device, the telescopic workbench and the stress sensor are connected through a synchronous transmission device, the first rotating device, the first magnetic chuck, the second rotating device and the stress controller are positioned on the telescopic workbench,
the micro-jet laser is over against a cutting point of the conductive SiC crystal ingot adsorbed by the second magnetic chuck in the cutting process, the control module controls the first rotating device and the second rotating device through the synchronous transmission device, so that the first magnetic chuck and the second magnetic chuck rotate synchronously to drive the conductive SiC crystal ingot to rotate, and the control module controls the telescopic workbench to drive the conductive SiC crystal ingot to perform stepping cutting in the cutting process through the synchronous transmission device; the stress controller detects the tensile stress, the compressive stress and the torsional stress of the conductive SiC crystal ingot in the cutting process, adjusts the telescopic workbench to move to eliminate the compressive stress and the tensile stress of the conductive SiC crystal ingot, and eliminates the torsional stress by adjusting the first rotating device and the second rotating device.
In one embodiment of the present application, the SiC ingot is of a semi-insulating type, and the fixing module includes, as shown in fig. 3, a first rotating means, an ingot seed site jig, a telescopic table, a cutting section jig, a second rotating means, a stress controller, and a synchronous transmission means;
one end of an opening of a crystal ingot seed crystal part clamp is used for fixing a seed crystal part of a semi-insulating SiC crystal ingot, the other end of the opening is connected with a first rotating device, a cutting part clamp is arranged opposite to the crystal ingot seed crystal part clamp, the cutting part clamp is used for fixing a cut part of the semi-insulating SiC crystal ingot, the first rotating device, a second rotating device, a telescopic workbench and a stress controller are connected through a synchronous transmission device, the first rotating device, the crystal ingot seed crystal part clamp, the cutting part clamp, the second rotating device and the stress controller are positioned on the telescopic workbench,
in the cutting process, the control module controls a micro-jet laser to cut the semi-insulating SiC crystal ingot, and controls the first rotating device and the second rotating device through the synchronous transmission device, so that the crystal ingot seed crystal part clamp and the cutting part clamp synchronously rotate to drive the semi-insulating SiC crystal ingot to rotate, and the control module also controls the telescopic workbench through the synchronous transmission device to drive the semi-insulating SiC crystal ingot to carry out stepping cutting in the cutting process; the stress controller detects the tensile stress, the compressive stress and the torsional stress of the semi-insulating SiC crystal ingot in the cutting process, adjusts the telescopic workbench to move to eliminate the compressive stress and the tensile stress of the semi-insulating SiC crystal ingot, and eliminates the torsional stress by adjusting the first rotating device and the second rotating device.
Fig. 4 shows an embodiment of a cutting method of the present application using the above SiC cutting device based on multi-power micro-jet laser, which includes a process S401 of fixing a SiC ingot by a fixing module and driving the SiC ingot to self-rotate at a predetermined speed; a process S402, wherein a first stage of cutting is carried out on the SiC crystal ingot by utilizing one micro-jet laser in the multi-power micro-jet laser head; and a process S403 of stepping the SiC ingot to a position under the next micro-jet laser by using the fixed module, and performing cutting at the next stage after correspondingly switching the micro-jet laser.
By utilizing the plurality of micro-jet lasers with different powers of the multi-power micro-jet laser head to cut the SiC crystal ingots in different cutting stages, the SiC cutting quality is effectively improved, the damage is reduced, and the yield is improved on the premise of ensuring the cutting efficiency.
In a specific embodiment of the present application, the multi-power micro-jet laser head comprises two micro-jet lasers; the process of cutting the SiC crystal ingot in the first stage by using one micro-jet laser in the multi-power micro-jet laser head comprises the steps of roughly cutting the SiC crystal ingot in the first stage to a preset position by using a micro-jet laser with higher power; and correspondingly switching the micro-jet laser and then cutting the SiC crystal ingot in the next stage, wherein the process of switching the micro-jet laser in the next stage comprises the step of switching the multi-power micro-jet laser head to the micro-jet laser with lower power to perform fine cutting on the SiC crystal ingot in the second stage until the cutting is finished.
In one embodiment of the present application, the predetermined position is a critical position where L is 0.7R, (where L is a cutting depth and R is a radius of the processed ingot), the higher power microjet laser power is 200W, and the lower power microjet laser power is 100W; the microfluidic laser was switched from 200W to 100W. In the cutting process, the processing difficulty is increased along with the increase of the cutting depth, the notch is changed in a V shape, the precision is reduced, two sides of the notch are narrowed at the position, the processing precision and the flatness of the side wall are reduced due to the processing of a 200W laser head, and therefore the 100W laser needs to be switched.
In a specific embodiment of the present application, the multi-power micro-jet laser head comprises three micro-jet lasers; roughly cutting the SiC crystal ingot to a first preset position in a first stage by utilizing the micro-jet laser with the maximum power, and switching the multi-power micro-jet laser head to the micro-jet laser with the second maximum power to finely cut the SiC crystal ingot to a second preset position after the fixing module drives the SiC crystal ingot to complete the first stepping; and then after the fixed module drives the SiC crystal ingot to finish the second stepping, switching the multi-power micro-jet laser head to the micro-jet laser with the minimum power to perform third-stage fine cutting on the SiC crystal ingot until the cutting is finished.
The micro-jet laser head with high power is utilized to carry out rough cutting, so that primary cutting can be carried out more quickly, and a cut can be punched as soon as possible. And a micro-jet laser head with lower power is used for fine cutting for fine carving, so that the processing is finer and the surface of the ingot is smoother.
In a specific embodiment of the present application, the micro-jet lasers include two micro-jet lasers, and after the SiC ingot is cut in the first stage by the micro-jet lasers with higher power to obtain a seed crystal crude product of the SiC ingot; and (4) stepping the SiC crystal ingot to micro-jet laser with lower power by using a fixed module to finely cut the crude SiC crystal ingot seed crystal to obtain the SiC crystal ingot seed crystal product.
In another embodiment of the present application, a computer-readable storage medium stores computer instructions that are operated to execute the cutting method using the multi-power micro-jet laser based SiC cutting apparatus described in the above embodiments.
In one particular embodiment of the present application, a computer device, comprising: at least one processor; and a memory communicatively coupled to the at least one processor; wherein the memory stores computer instructions executable by the at least one processor, the at least one processor operating the computer instructions to perform the cutting method using the multi-power micro-jet laser based SiC cutting apparatus described in the above embodiments.
In the several embodiments provided in the present application, it should be understood that the disclosed apparatus and method may be implemented in other ways. For example, the above-described apparatus embodiments are merely illustrative, and for example, the division of the units is only one logical division, and other divisions may be realized in practice, for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, devices or units, and may be in an electrical, mechanical or other form.
The units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
The above description is only an example of the present application and is not intended to limit the scope of the present application, and all equivalent structural changes made by using the contents of the specification and the drawings, which are directly or indirectly applied to other related technical fields, are included in the scope of the present application.
Claims (6)
1. A SiC cutting device based on multi-power micro-jet laser comprises:
the fixing module is used for fixing the SiC crystal ingot, driving the SiC crystal ingot to perform self-rotation at a preset speed and driving the SiC crystal ingot to perform stepping; and
a cutting module for cutting the SiC ingot;
it is characterized in that the preparation method is characterized in that,
the cutting module comprises a multi-power micro-jet laser head which is used for cutting the SiC crystal ingot at different cutting stages through a plurality of micro-jet lasers with different power.
2. The SiC cutting device based on the multi-power micro-jet laser of claim 1, further comprising,
and the control module is used for controlling the cutting module to cut and controlling the fixing module to perform self-rotation and stepping.
3. The SiC cutting device based on the multi-power micro-jet laser according to claim 2,
the control module controls the fixed module to step according to a preset first rule; the control module includes:
and the laser control module is used for cutting the SiC crystal ingot by using one of the multi-stage micro-jet lasers according to a preset second rule, and continuously carrying out corresponding switching on the micro-jet lasers after the fixed module drives the SiC crystal ingot to finish stepping.
4. The SiC cutting device based on the multi-power micro-jet laser according to claim 1,
the fixing module comprises a fixing module and a fixing module,
the first fixing submodule is used for fixing the seed crystal part of the SiC crystal ingot and driving the seed crystal part of the SiC crystal ingot to perform self-rotation and stepping;
the second fixing submodule is used for fixing the cut part of the SiC crystal ingot and driving the cut part of the SiC crystal ingot to rotate and step synchronously with the first fixing submodule;
5. a method of cutting an SiC cutting device using the multi-power micro-jet laser of claim 1, comprising,
fixing the SiC crystal ingot by using the fixing module, so that the SiC crystal ingot is positioned in a core region of a cutting working region of the current working micro-jet laser in the multi-power micro-jet laser head, and driving the SiC crystal ingot to perform self-rotation at the preset speed;
cutting the SiC crystal ingot by the currently working microjet laser in a first stage;
and stepping the SiC crystal ingot to a core area of a cutting working area of the next micro-jet laser by using the fixing module, and correspondingly switching the micro-jet laser and then cutting at the next stage.
6. The cutting method according to claim 5,
the multi-power micro-jet laser head comprises two micro-jet lasers;
the process of carrying out the first-stage cutting on the SiC crystal ingot by using the currently working microjet laser comprises carrying out the first-stage rough cutting on the SiC crystal ingot to a preset position by using the microjet laser with higher power;
and the process of cutting at the next stage after correspondingly switching the micro-jet laser comprises the step of switching the multi-power micro-jet laser head to the micro-jet laser with lower power to perform fine cutting at the second stage on the SiC crystal ingot until the cutting is finished.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111493888.3A CN114260590A (en) | 2021-12-08 | 2021-12-08 | SiC cutting device based on multi-power micro-jet laser and cutting method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111493888.3A CN114260590A (en) | 2021-12-08 | 2021-12-08 | SiC cutting device based on multi-power micro-jet laser and cutting method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114260590A true CN114260590A (en) | 2022-04-01 |
Family
ID=80826573
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111493888.3A Pending CN114260590A (en) | 2021-12-08 | 2021-12-08 | SiC cutting device based on multi-power micro-jet laser and cutting method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114260590A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114714004A (en) * | 2022-06-09 | 2022-07-08 | 西安晟光硅研半导体科技有限公司 | Water drainage processing method based on water guide laser rolling round crystal ingot |
| CN115401343A (en) * | 2022-11-02 | 2022-11-29 | 西安晟光硅研半导体科技有限公司 | Tool for manually cutting crystal ingot on double faces of water jet laser |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0500110A1 (en) * | 1991-02-21 | 1992-08-26 | Hewlett-Packard Company | Process of photo-ablating at least one stepped opening extending through a polymer material, and a nozzle plate having stepped openings |
| CN101332559A (en) * | 2008-07-18 | 2008-12-31 | 西安交通大学 | Laser compound processing and modifying method of no-recasting-layer micro deep-hole |
| CN102438787A (en) * | 2009-04-17 | 2012-05-02 | 沓名宗春 | Method of laser machining of fiber-reinforced composite material and product made by the method |
| CN106425125A (en) * | 2016-09-30 | 2017-02-22 | 广东工业大学 | Ceramic drilling method of composite nanosecond-picosecond-femtosecond laser technology |
| CN107127459A (en) * | 2017-06-01 | 2017-09-05 | 深圳光韵达激光应用技术有限公司 | A kind of laser accurate processing method of diamond cutter |
| CN107160035A (en) * | 2017-07-11 | 2017-09-15 | 东莞市力星激光科技有限公司 | A kind of novel integral compact laser pipe cutting machine |
| CN109570778A (en) * | 2018-12-29 | 2019-04-05 | 大族激光科技产业集团股份有限公司 | A kind of laser processing and laser-processing system of hard brittle material |
| CN110625268A (en) * | 2019-08-26 | 2019-12-31 | 石狮市云帆工业设计有限公司 | Wafer cutting equipment |
| CN111805077A (en) * | 2020-08-24 | 2020-10-23 | 松山湖材料实验室 | Method for manufacturing wafer microstructure |
| CN112620973A (en) * | 2020-12-18 | 2021-04-09 | 成都中创光科科技有限公司 | Unidirectional three-time bidirectional six-stage step cutting process for silicon carbide wafer |
| CN213196184U (en) * | 2020-08-19 | 2021-05-14 | 西安中科微精光子制造科技有限公司 | Double-light-source composite laser processing device |
| CN113649706A (en) * | 2021-07-07 | 2021-11-16 | 西安电子科技大学芜湖研究院 | SiC wafer efficient chamfering method based on water jet laser |
-
2021
- 2021-12-08 CN CN202111493888.3A patent/CN114260590A/en active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0500110A1 (en) * | 1991-02-21 | 1992-08-26 | Hewlett-Packard Company | Process of photo-ablating at least one stepped opening extending through a polymer material, and a nozzle plate having stepped openings |
| CN101332559A (en) * | 2008-07-18 | 2008-12-31 | 西安交通大学 | Laser compound processing and modifying method of no-recasting-layer micro deep-hole |
| CN102438787A (en) * | 2009-04-17 | 2012-05-02 | 沓名宗春 | Method of laser machining of fiber-reinforced composite material and product made by the method |
| CN106425125A (en) * | 2016-09-30 | 2017-02-22 | 广东工业大学 | Ceramic drilling method of composite nanosecond-picosecond-femtosecond laser technology |
| CN107127459A (en) * | 2017-06-01 | 2017-09-05 | 深圳光韵达激光应用技术有限公司 | A kind of laser accurate processing method of diamond cutter |
| CN107160035A (en) * | 2017-07-11 | 2017-09-15 | 东莞市力星激光科技有限公司 | A kind of novel integral compact laser pipe cutting machine |
| CN109570778A (en) * | 2018-12-29 | 2019-04-05 | 大族激光科技产业集团股份有限公司 | A kind of laser processing and laser-processing system of hard brittle material |
| CN110625268A (en) * | 2019-08-26 | 2019-12-31 | 石狮市云帆工业设计有限公司 | Wafer cutting equipment |
| CN213196184U (en) * | 2020-08-19 | 2021-05-14 | 西安中科微精光子制造科技有限公司 | Double-light-source composite laser processing device |
| CN111805077A (en) * | 2020-08-24 | 2020-10-23 | 松山湖材料实验室 | Method for manufacturing wafer microstructure |
| CN112620973A (en) * | 2020-12-18 | 2021-04-09 | 成都中创光科科技有限公司 | Unidirectional three-time bidirectional six-stage step cutting process for silicon carbide wafer |
| CN113649706A (en) * | 2021-07-07 | 2021-11-16 | 西安电子科技大学芜湖研究院 | SiC wafer efficient chamfering method based on water jet laser |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114714004A (en) * | 2022-06-09 | 2022-07-08 | 西安晟光硅研半导体科技有限公司 | Water drainage processing method based on water guide laser rolling round crystal ingot |
| CN115401343A (en) * | 2022-11-02 | 2022-11-29 | 西安晟光硅研半导体科技有限公司 | Tool for manually cutting crystal ingot on double faces of water jet laser |
| CN115401343B (en) * | 2022-11-02 | 2023-03-14 | 西安晟光硅研半导体科技有限公司 | A frock that is used for two-sided cutting ingot of manual of water jet laser |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN114260590A (en) | SiC cutting device based on multi-power micro-jet laser and cutting method thereof | |
| CN105618936B (en) | One kind uses laser grooving and scribing glass processing method | |
| US4467168A (en) | Method of cutting glass with a laser and an article made therewith | |
| CN111347571A (en) | Laser-assisted low-damage cutting machining system and method for optical hard and brittle material | |
| CN2860712Y (en) | High-power solid laser plane cutter | |
| CN112620973B (en) | Unidirectional three-layer bidirectional six-stage step cutting process for silicon carbide wafer | |
| WO2007094348A1 (en) | Laser scribing method, laser scribing apparatus and cut substrate cut by using such method or apparatus | |
| CN107042364B (en) | The method that laser assisted ultra-precise fly cuts monocrystalline germanium two-dimension optical rotary drum | |
| CN113649706A (en) | SiC wafer efficient chamfering method based on water jet laser | |
| CN205342235U (en) | Laser cutting machine with interactive workstation | |
| CN105669014B (en) | It is a kind of to use laser grooving and scribing glass processing method | |
| CN103817368A (en) | Method of machining carbon-fibre composite material by combination of laser and machinery | |
| EP2237308A2 (en) | Manufacturing Unit for Integrated Thin Film Solar Cells | |
| CN113649707B (en) | Processing method for rounding SiC crystal and forming reference surface at one time | |
| CN114571093A (en) | SiC rounding device based on multi-power micro-jet laser and rounding method thereof | |
| CN1792548B (en) | Method for finishing processing of controllable deforming electronic beam | |
| CN106271096A (en) | A kind of processing method of pcb board | |
| CN208358057U (en) | A kind of laser cutting machine | |
| CN112775563B (en) | Unidirectional four-layer bidirectional eight-stage step cutting process for silicon carbide wafer | |
| CN107414284A (en) | A kind of PRK aids in micro- milling method and device | |
| CN108436302A (en) | A kind of laser cutting machine | |
| CN116765593A (en) | Water jet laser rounding system of conductive SiC crystal ingot | |
| Wang et al. | Intelligent laser machining system for multi-function processing of superhard materials | |
| CN106141446B (en) | Brittle object cutting device and cutting method thereof | |
| CN220805907U (en) | Ultrafast femtosecond micro-nano processing equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |