CN114571093A - SiC rounding device based on multi-power micro-jet laser and rounding method thereof - Google Patents
SiC rounding device based on multi-power micro-jet laser and rounding method thereof Download PDFInfo
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Abstract
The application discloses a SiC rounding device based on multi-power micro-jet laser and a rounding method thereof, and belongs to the field of semiconductor material processing. It mainly comprises: the device comprises an upper rotating module, a lower rotating module, an upper fixing module, a lower fixing module, a stress controller and a rolling circle cutting module; the lower rotating module is used for installing and fixing the lower fixing module and driving the lower fixing module and the SiC crystal ingot to perform self-rotation at a preset speed; the SiC crystal ingot rounding cutting module comprises a multi-power micro-jet laser head and is used for carrying out rounding cutting on SiC crystal ingots in different rounding stages through a plurality of micro-jet lasers with different power sizes, and the SiC crystal ingots in different rounding stages are rounded by utilizing the plurality of micro-jet lasers with different power sizes of the multi-power micro-jet laser head, so that the SiC rounding quality is effectively improved, the damage is reduced, and the yield is improved on the premise of ensuring the rounding efficiency.
Description
Technical Field
The invention relates to the technical field of processing of semiconductor materials, in particular to a SiC rounding device based on multi-power micro-jet laser and a rounding method thereof.
Background
SiC is taken as a typical hard and brittle material, the Mohs hardness of SiC is 9.2-9.5, which is second to that of diamond, so that the processing and manufacturing process is very difficult. The rounding is the first critical process for manufacturing the SiC single crystal substrate, and the processing quality of the rounding directly affects the material rounding loss, the material removal amount of the subsequent process, the final processing quality (surface roughness and flatness), the product yield, the processing cost and the like. With the development of crystal growth technology and the continuous increase of market demand, the demand of large-diameter SiC single crystal substrates is increasing; at present, the transition of the SiC single crystal substrate from 6 inches to 8 inches brings a serious challenge to the traditional wafer rounding technology, and how to round the SiC single crystal with high efficiency, high quality, low cost, low damage and high yield becomes an important research direction in the field of processing the SiC single crystal substrate at present.
In the prior art, when the micro-jet laser is adopted to round the SiC crystal ingot, a single-power micro-jet laser head is adopted. If the laser power is too high, the rounding is too rough, which is not beneficial to rounding the SiC single crystal with high quality, low damage and high yield; and if the adopted laser power is smaller, the rounding efficiency is lower and the cost is higher.
Disclosure of Invention
Aiming at the problems in the prior art, the application mainly provides a SiC rounding device based on multi-power micro-jet laser and a rounding method thereof.
In order to achieve the above object, the present application adopts a technical solution that: the lower rotating module of the SiC rounding device comprises a fixed disc, a mounting seat, a gearwheel, a pinion and a servo motor, wherein the servo motor is fixedly connected with the pinion through a hole in the fixed disc, the pinion is externally meshed with the gearwheel, the mounting seat is positioned in the center of the gearwheel, a notch is formed in the mounting seat, and the lower rotating module is used for mounting and fixing the lower fixing module and driving the lower fixing module and a SiC crystal ingot to perform self-rotation at a preset speed; the lower fixing module comprises a fixing disc body and a telescopic positioning shaft, the telescopic positioning shaft is positioned at the center of the bottom of the fixing disc body, the sucking disc body is convexly arranged and is in telescopic connection with a notch on the mounting seat, the SiC crystal ingot is detachably fixed at the center of the fixing disc body, and the telescopic positioning shaft is used for releasing the stress of the SiC crystal ingot; the servo motor is fixedly connected with the pinion through a hole in the fixed disc, the rotating shaft is clamped in the center of the pinion, the rotating shaft drives the pinion to rotate the servo motor, and meanwhile, the rotating shaft is connected with the synchronous transmission system through a bearing to drive the upper rotating module and the lower rotating module to synchronously rotate; one end of the stress controller is connected with the upper rotating module, the other end of the stress controller is connected with the upper fixing module, when the stress sensor detects that stress exists in the SiC crystal ingot to be rounded, a signal can be transmitted to the control system, and the control system releases the stress through the fine-adjustment telescopic positioning shaft; the SiC crystal ingot rounding cutting module comprises a multi-power micro-jet laser head and is used for carrying out rounding cutting on SiC crystal ingots in different rounding stages through a plurality of micro-jet lasers with different power.
Optionally, the SiC rounding device based on multi-power microjet laser of this application still includes, control module, and it is used for controlling the cutting module to cut, carries out autogyration through rotary module under the servo motor control to and control scalable location axle and carry out concertina movement for the mount pad.
Optionally, the control module controls the telescopic positioning shaft to move relative to the mounting base in a telescopic manner according to a preset first condition, so as to drive the SiC crystal ingot to step, and the control module includes: and the laser control module is used for cutting the SiC crystal ingot by utilizing one of the multi-stage micro-jet lasers according to a preset second condition, and continuously carrying out corresponding switching on the micro-jet lasers after the lower fixing module drives the SiC crystal ingot to finish stepping.
Another technical scheme adopted by the application is as follows: the rounding method of the SiC rounding device based on the multi-power micro-jet laser comprises the following steps: fixing the SiC crystal ingot by using a lower fixing module to enable the SiC crystal ingot to be positioned in a core area of a cutting working area of the current working micro-jet laser in the multi-power micro-jet laser head, and driving the SiC crystal ingot to perform self-rotation at a preset speed by using a lower rotating module; performing first-stage rounding cutting on the SiC crystal ingot by using the current working microjet laser; and driving the SiC crystal ingot to step to the core area of the cutting working area of the next micro-jet laser by using the telescopic positioning shaft of the lower fixing module, and performing the next-stage rounding after correspondingly switching the micro-jet laser.
Optionally, the multi-power micro-jet laser head comprises two micro-jet lasers; the process of carrying out first-stage rounding cutting on the SiC crystal ingot by using the current working microjet laser comprises the steps of carrying out first-stage rough rounding cutting on the SiC crystal ingot to a preset position by using a high-power microjet laser; and correspondingly switching the micro-jet lasers and then carrying out the next-stage rounding cutting process, namely switching the multi-power micro-jet laser heads to the micro-jet lasers with lower power to carry out the second-stage fine rounding cutting on the SiC crystal ingot until the rounding is finished to obtain the SiC crystal ingot seed product.
The technical scheme of the application can reach the beneficial effects that: the application designs a SiC rounding device based on multi-power micro-jet laser and a rounding method thereof. The device utilizes a plurality of micro-jet lasers with different power of the multi-power micro-jet laser head to carry out rounding cutting on the SiC crystal ingot at different stages, and on the premise of ensuring the rounding efficiency, the SiC rounding quality is effectively improved, the damage is reduced, and the yield is improved.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to these drawings without inventive exercise.
FIG. 1 is a schematic diagram comparing conventional laser cutting with micro-jet laser cutting;
FIG. 2 is a schematic diagram of an embodiment of a multi-power micro-jet laser based SiC cutting device according to the present application;
FIG. 3 is a schematic view of a lower rotating module in an embodiment of a multi-power micro-jet laser based SiC cutting device of the present application;
FIG. 4 is a schematic diagram of a SiC cutting device rounding along a tangential direction of a rounding track based on multi-power micro-jet laser according to the present application;
FIG. 5 is a schematic view of a lower stationary module in an embodiment of a multi-power micro-jet laser based SiC cutting device of the present application;
FIG. 6 is a side view of a lower stationary block in one embodiment of a multi-power micro-jet laser based SiC cutting apparatus of the present application;
FIG. 7 is a schematic diagram of an embodiment of a method for SiC cutting based on multi-power micro-jet laser according to the present application;
FIG. 8 is a schematic view of the process of the lower rotation module of the present application driving a SiC ingot to self-rotate at a predetermined speed.
With the above figures, there are shown specific embodiments of the present application, which will be described in more detail below. These drawings and written description are not intended to limit the scope of the inventive concepts in any manner, but rather to illustrate the inventive concepts to those skilled in the art by reference to specific embodiments.
Detailed Description
The following detailed description of the preferred embodiments of the present application, taken in conjunction with the accompanying drawings, will provide those skilled in the art with a better understanding of the advantages and features of the present application, and will make the scope of the present application more clear and definite.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The laser micro-water jet is an advanced technology for guiding laser to realize processing by the fine water jet, and is also called as a laser micro-water jet processing technology. The technology focuses laser beams and then couples the laser beams into high-speed water jet, and the laser is totally reflected on the inner surface of the water jet due to the difference of refractive indexes of water and air, so that concentrated laser energy is limited in the water jet. During processing, the laser beam focused to the nozzle position forms total reflection on the inner wall of the micro water column, and then generates an energy beam with uniformly distributed cross-sectional energy, and the energy beam is guided to the surface of the workpiece to realize workpiece processing. The method is an industry leading solution in the industries of aircraft engine hot end part manufacturing, aircraft CFRP structural part processing, natural diamond rounding, large-scale integrated circuit wafer rounding and the like.
The advantages of laser microwaterjet over conventional laser machining techniques include: (1) no focusing is required. The non-sheet surface processing has no problem, 3D cutting can be carried out, and the processing depth can reach several centimeters; (2) the micro water jet keeps the laser beams in the parallel water jet to be completely parallel, and the cylindrical laser beams realize parallel edge cutting, so that high-quality wall processing and edge cutting are ensured; (3) the aspect ratio is large, the trimming width below 30 mu m can be realized, and deeper holes can be drilled with minimum material loss; (4) the cooling effect of the water jet avoids thermal damage and material change so as to maintain the designed fatigue strength; (5) the water film eliminates the accumulation and pollution of processing waste particles, and a protective layer on the processing surface is not needed; (6) the high kinetic energy of the water jet dissipates and melts the particles of waste material, avoiding burrs and cleaning the high quality formed machined surface, as shown in figure 1.
However, in the prior art, when the micro-jet laser is used for rounding and cutting the SiC crystal ingot, a single-power micro-jet laser head is used. If the laser power is too high, the capability of discharging cutting waste materials by water flow is reduced along with the increase of the processing depth because the aperture is reduced, the appearance of the side wall cannot be ensured, so that the rounding cutting is too rough, and the rounding SiC single crystal is not beneficial to high quality, low damage and high yield; and if the adopted laser power is smaller, the rounding efficiency is lower and the cost is higher.
This application utilizes a plurality of little efflux laser of the power size difference of many power little efflux laser head, to different stages the SiC crystal ingot carries out the rounding cutting, can guarantee under the prerequisite of rounding efficiency, improves SiC rounding quality effectively, reduces the damage, improves the yield.
The following describes the technical solutions of the present application and how to solve the above technical problems with specific embodiments. The following several specific embodiments may be combined with each other, and details of the same or similar concepts or processes may not be repeated in some embodiments. Embodiments of the present application will be described below with reference to the accompanying drawings.
The SiC rounding device based on the multi-power micro-jet laser provided by the present application as shown in fig. 2 includes an upper rotating module 7, a lower rotating module 20, an upper fixing module 5, a lower fixing module 30, a stress controller 6, and a rounding cutting module.
Specifically, one end of the stress controller 6 is connected with the upper rotating module 7, the other end of the stress controller is connected with the upper fixing module 5, when the stress sensor detects that stress exists, a signal can be transmitted to the control system, and the control system releases the stress by finely adjusting the telescopic positioning shaft 3;
specifically, as shown in fig. 3, the lower rotating module 20 is connected to the lower fixing module 30, the lower rotating module 20 includes a fixed disk 21, a mounting seat 22, a bull gear 23, and a pinion 24, the pinion 24 is externally engaged with the bull gear 23, the mounting seat 22 is located at the center of the bull gear 23, a notch is formed in the mounting seat 22, and the lower rotating module 20 is used for mounting and fixing the lower fixing module 30 and driving the lower fixing module 30 and the SiC ingot 4 to rotate at a predetermined speed;
it should be noted that the servo motor 25 is fixedly connected with the pinion 24 through a hole on the fixed disk 21, the rotating shaft is clamped at the center position of the pinion 24, and the rotating shaft drives the pinion 24 to rotate the servo motor 25 and simultaneously connects with the synchronous transmission system 8 through a bearing to drive the upper rotating module 7 and the lower rotating module 20 to synchronously rotate.
The lower fixing module 30 comprises a fixing disc body and a telescopic positioning shaft 3, the telescopic positioning shaft 3 is positioned at the center of the bottom of the fixing disc body, a sucking disc body is convexly arranged and is in telescopic connection with a notch on the mounting seat 22, the SiC crystal ingot 4 is detachably fixed at the center of the fixing disc body, and the telescopic positioning shaft 3 is used for stepping the SiC crystal ingot 4; the SiC crystal ingot rounding cutting module comprises a multi-power micro-jet laser head, and is used for carrying out rounding cutting on the SiC crystal ingot 4 in different rounding stages through a plurality of micro-jet lasers with different power.
The device of the application utilizes a plurality of micro-jet lasers with different power sizes of the multi-power micro-jet laser head to carry out rounding cutting on the SiC crystal ingot 4 in different rounding stages, and can effectively improve the SiC rounding quality, reduce the damage and improve the yield on the premise of ensuring the rounding efficiency.
In an embodiment of the present application, the SiC rounding device for multi-power micro-jet laser further includes a control module, which is configured to control the cutting module to cut, to self-rotate the rotation module 20 under the control of the servo motor, and to control the telescopic positioning shaft 3 to perform telescopic motion relative to the mounting seat 22.
In one embodiment of the present application, the control module controls the telescopic positioning shaft 3 to move telescopically relative to the mounting base 22 according to a predetermined first condition to step the SiC crystal, for example, after a first stage rounding is completed, the SiC ingot 4 is moved from a first predetermined position to a second predetermined position by the telescopic positioning shaft 3 so that the SiC ingot 4 is in a core working region of the microjet laser for second stage rounding to facilitate a second stage rounding of the SiC ingot 4.
In an embodiment of the present application, the control module includes a laser control module, configured to round the SiC ingot 4 with one of the multiple stages of micro-jet lasers according to a preset second condition, and continue to switch the micro-jet lasers after the lower fixing module 30 drives the SiC ingot 4 to complete stepping.
In an alternative embodiment of the present application, when the laser control module rounds the SiC ingot 4 with one of the multi-stage micro-jet lasers, the laser head can be controlled to precisely move in the X, Y, Z three-axis directions according to the rounding size of the SiC ingot. The rotation trajectory is shown in fig. 4.
In a specific embodiment of the present application, the multi-power micro-jet laser head comprises two micro-jet lasers; the second preset rule is that the SiC crystal ingot is roughly rounded to a preset position in the first stage by using the micro-jet laser with higher power; and switching the multi-power micro-jet laser head to micro-jet laser with lower power to perform second-stage fine rounding on the SiC crystal ingot until finishing rounding to obtain a SiC crystal ingot seed product.
The micro-jet laser head with high power is utilized to carry out rough rounding, so that primary rounding can be carried out more quickly, and a cut can be punched as soon as possible. And a micro-jet laser head with lower power is used for carrying out fine rounding for fine carving, so that the processing is finer, and the surface of the ingot is smoother.
In one specific example of the present application, the predetermined position is a critical position where L ═ 0.7R, (where L is the rounding depth and R is the radius of the processed ingot), and the microjet laser is switched from 200W to 100W. In the rounding process, as the rounding depth is increased, the processing difficulty is increased, the notch is changed in a V shape, the precision is reduced, the two sides of the notch are narrowed at the position, and the processing precision and the flatness of the side wall are reduced by processing with a 200W laser head, so that the 100W laser needs to be switched.
In one embodiment of the present application, the SiC boule is of a conductive type and the fixed disk is an electromagnetic fixed chuck.
When the SiC crystal ingot is rounded, the micro-jet laser heads are perpendicular to the rotating plane of the rotating device or/and parallel to the rotating plane along the tangential direction of a rounding track, the servo motor 25 drives the small gear 24, the small gear 24 drives the large gear 23 to rotate, the mounting seat 22 above the large gear 23 is connected with the electromagnetic fixed sucker to complete power transmission and speed reduction, so that the electromagnetic fixed sucker is driven to rotate to drive the SiC crystal ingot to do circular motion, the rounding track of the SiC crystal ingot is located in the core area of the cutting working area of the micro-jet laser heads, and the micro-jet laser heads and the rotating shaft are automatically adjusted according to the depth of a cut, so that the cutting position of the SiC crystal ingot is always located in the core area of the cutting working area of the micro-jet laser heads, and the rounding process of the SiC crystal ingot is completed.
In an embodiment of the present application, the SiC ingot is semi-insulating type, referring to fig. 5, the lower fixing module 30 includes a chuck body 1, a tightening and loosening device and a retractable positioning shaft 3, the retractable positioning shaft 3 is located at a central position of the bottom of the chuck body 1, and is protruded out of the chuck body 1 to be mechanically engaged with a notch on the mounting seat 22, an upper end surface of the retractable positioning shaft 3 contacts with a lower end surface of the semi-insulating type SiC ingot placed on the chuck body 1 to cooperate with the positioning of the semi-insulating type SiC ingot, the tightening and loosening device is located inside the chuck body 1, the tightening and loosening device includes a plurality of soft jaws 2 and a soft jaw shifting device, the plurality of soft jaws 2 are uniformly arranged on the soft jaw shifting device, the soft jaw shifting device controls the plurality of soft jaws 2 to cooperate with each other to manually tighten or automatically tighten the semi-insulating type SiC ingot on the chuck body 1 through a centripetal motion near the retractable positioning shaft 3, the plurality of soft jaws 2 are controlled to manually loosen or automatically loosen the semi-insulating SiC crystal ingot on the chuck body 1 through centrifugal motion far away from the telescopic positioning shaft 3,
it is worth to be noted that the positioning principle process of the present invention: as the clamping length of the crystal ingot on the end of the chuck body is less than 1mm, as shown in figure 6, the plane of the end of the telescopic positioning shaft 3 is matched with the plane of the semi-insulating SiC crystal ingot 4 for positioning, and the positioning is quick and accurate.
When the SiC crystal ingot is rounded, the micro-jet laser head is perpendicular to the rotating plane of the rotating device or parallel to the rotating plane, the semi-insulating SiC crystal ingot on the chuck body is manually clamped or automatically clamped along the tangential direction of a rounding track, a servo motor 25 drives a pinion 24, the pinion 24 drives a gear wheel 23 to rotate, a mounting seat 22 above the gear wheel 23 is connected with a crystal ingot seed part clamp to complete power transmission and speed reduction, so that the crystal ingot seed part clamp is driven to rotate, the SiC crystal ingot is driven to do circular motion, the rounding track of the SiC crystal ingot is located in a core area of a cutting working area of the micro-jet laser head, and automatic adjustment is performed according to the preset depth of a cut so that the cutting position of the SiC crystal ingot is always located in the core area of the micro-jet laser head cutting working area, and the SiC crystal ingot rounding process is completed, so that crystal rounding is achieved.
Fig. 7 shows an embodiment of a rounding method of the present application using the SiC rounding device based on multi-power micro-jet laser, which includes a process S701 of fixing a SiC ingot by using a lower fixing module so that the SiC ingot is located in a core region of a cutting work area of currently operating micro-jet laser in the multi-power micro-jet laser head, and driving the SiC ingot to self-rotate at a predetermined speed by using a lower rotating module; a process S702, in which the SiC crystal ingot is subjected to first-stage rounding cutting by using the current working microjet laser; and in the process S703, the telescopic positioning shaft of the lower fixing module is utilized to drive the SiC crystal ingot to step to the core area of the cutting working area of the next micro-jet laser, and the micro-jet laser is correspondingly switched to perform the next round rolling cutting stage.
By utilizing the plurality of micro-jet lasers with different powers of the multi-power micro-jet laser head to carry out rounding cutting on the SiC crystal ingots in different rounding stages, the SiC rounding quality is effectively improved, the damage is reduced, and the yield is improved on the premise of ensuring the rounding efficiency.
In a specific embodiment of the present application, the multi-power micro-jet laser head comprises two micro-jet lasers; the process of carrying out first-stage rounding cutting on the SiC crystal ingot by using the current working microjet laser comprises the steps of carrying out first-stage rough rounding cutting on the SiC crystal ingot to a preset position by using a high-power microjet laser; and correspondingly switching the micro-jet lasers and then carrying out the next-stage rounding cutting process, namely switching the multi-power micro-jet laser heads to the micro-jet lasers with lower power to carry out the second-stage fine rounding cutting on the SiC crystal ingot until the rounding is finished to obtain the SiC crystal ingot seed product.
In one embodiment of the present application, the predetermined position is a critical position where L is 0.7R, (where L is the rounding depth and R is the radius of the processed ingot), the higher power microjet laser power is 200W and the lower power microjet laser power is 100W; the microfluidic laser was switched from 200W to 100W. In the rounding process, as the rounding depth is increased, the processing difficulty is increased, the notch is changed in a V shape, the precision is reduced, the two sides of the notch are narrowed at the position, and the processing precision and the flatness of the side wall are reduced by processing with a 200W laser head, so that the 100W laser needs to be switched.
In a specific embodiment of the present application, the multi-power micro-jet laser head comprises three micro-jet lasers; carrying out first-stage rough rounding cutting on the SiC crystal ingot to a first preset position by using the micro-jet laser with the maximum power, and switching the multi-power micro-jet laser head to the micro-jet laser with the second maximum power to carry out second-stage fine rounding cutting on the SiC crystal ingot to a second preset position after the lower fixing module drives the SiC crystal ingot to complete the first stepping; and then after the lower fixing module drives the SiC crystal ingot to finish the second stepping, switching the multi-power micro-jet laser head to the micro-jet laser with the minimum power to perform third-stage fine rounding cutting on the SiC crystal ingot until the rounding is finished to obtain a SiC crystal ingot seed product.
The micro-jet laser head with high power is utilized to carry out rough rounding, so that primary rounding can be carried out more quickly, and a cut can be punched as soon as possible. And a micro-jet laser head with lower power is used for carrying out fine rounding for fine carving, so that the processing is finer, and the surface of the ingot is smoother.
In a specific embodiment of the present application, the micro-jet laser includes two micro-jet lasers, and after the SiC ingot is subjected to the first-stage rounding by using the micro-jet laser with higher power to obtain a SiC ingot seed crystal crude product; and the lower fixed module is utilized to step the SiC crystal ingot to finely round the crude SiC crystal ingot seed product under the micro-jet laser with lower power to obtain the SiC crystal ingot seed product, and the product damage caused by the rough rounding can be effectively repaired by firstly performing rough rounding and then performing fine rounding.
In a specific embodiment of the present application, as shown in fig. 8, the multi-power micro-jet laser head comprises two micro-jet lasers; the process of driving the SiC ingot to perform self-rotation at a predetermined speed by using the lower rotation module 20 includes driving the SiC ingot to perform self-rotation in opposite rotation directions by using the lower rotation module 20 in the first stage and the second stage, respectively; the process of carrying out first-stage rounding cutting on the SiC crystal ingot by using the current working microjet laser comprises the steps of carrying out first-stage rough rounding cutting on the SiC crystal ingot by using a microjet laser with higher power to obtain a SiC crystal ingot seed crude product; the process of carrying out the next-stage rounding cutting after correspondingly switching the micro-jet lasers comprises the steps of switching a multi-power micro-jet laser head to the micro-jet lasers with lower power to carry out the second-stage fine rounding on the SiC crystal ingot to obtain the SiC crystal ingot seed product, firstly carrying out the first-stage coarse rounding cutting in one direction, quickly cutting off most of non-product materials, carrying out the fine rounding cutting in the direction opposite to the first stage, releasing stress, repairing damage and greatly improving the quality of the SiC crystal ingot seed product.
Optionally, the lower rotating module 20 is used to drive the SiC ingot to rotate counterclockwise when the first stage performs the rounding cutting, and the lower rotating module 20 is used to drive the SiC ingot to rotate counterclockwise and clockwise when the second stage performs the rounding cutting.
In another specific embodiment of the present application, a computer readable storage medium stores computer instructions which are operated to execute the rounding method using the SiC rounding device based on multi-power micro-jet laser described in the above embodiments.
In one particular embodiment of the present application, a computer apparatus includes: at least one processor; and a memory communicatively coupled to the at least one processor; wherein the memory stores computer instructions executable by the at least one processor, the at least one processor operating the computer instructions to perform the rounding method using the multi-power micro-jet laser based SiC rounding device described in the above embodiments.
In the several embodiments provided in the present application, it should be understood that the disclosed apparatus and method may be implemented in other ways. For example, the above-described apparatus embodiments are merely illustrative, and for example, the division of the modules is merely a logical division, and in actual implementation, there may be other divisions, for example, multiple modules or components may be combined or integrated into another system, or some features may be omitted, or not implemented. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, devices or modules, and may be in an electrical, mechanical or other form.
The modules described as separate parts may or may not be physically separate, and parts displayed as modules may or may not be physical modules, may be located in one place, or may be distributed on a plurality of network modules. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of this embodiment.
The above description is only an example of the present application and is not intended to limit the scope of the present application, and all equivalent structural changes made by using the contents of the specification and the drawings, which are directly or indirectly applied to other related technical fields, are included in the scope of the present application.
Claims (6)
1. A SiC rounding device based on multi-power micro-jet laser comprises: an upper rotating module, a lower rotating module, an upper fixing module, a lower fixing module, a stress controller and a rolling circle cutting module,
the lower rotating module comprises a fixed disc, a mounting seat, a gearwheel, a pinion and a servo motor, the servo motor is fixedly connected with the pinion through a hole in the fixed disc, the pinion is externally meshed with the gearwheel, the mounting seat is positioned at the center of the gearwheel, a notch is formed in the mounting seat, and the lower rotating module is used for mounting and fixing the lower fixing module and driving the lower fixing module and a SiC crystal ingot to perform self-rotation at a preset speed;
the lower fixing module comprises a fixing disc body and a telescopic positioning shaft, the telescopic positioning shaft is positioned at the center of the bottom of the fixing disc body, a sucking disc body is convexly arranged and is in telescopic connection with a notch on the mounting seat, the SiC crystal ingot is detachably fixed at the center of the fixing disc body, and the telescopic positioning shaft is used for releasing stress of the SiC crystal ingot;
the servo motor is fixedly connected with the pinion through an upper hole of the fixed disc, the rotating shaft is clamped in the center of the pinion, the rotating shaft drives the pinion to rotate the servo motor, and meanwhile, the rotating shaft is connected with the synchronous transmission system through a bearing to drive the upper rotating module and the lower rotating module to synchronously rotate;
one end of the stress controller is connected with the upper rotating module, the other end of the stress controller is connected with the upper fixing module, when the stress sensor detects that stress exists in the SiC crystal ingot to be rounded, a signal can be transmitted to the control system, and the control system releases the stress through the fine-adjustment telescopic positioning shaft;
the SiC crystal ingot rounding cutting module comprises a multi-power micro-jet laser head and is used for carrying out rounding cutting on the SiC crystal ingot in different rounding stages through a plurality of micro-jet lasers with different power.
2. The SiC rounding device based on multi-power micro-jet laser of claim 1, further comprising,
and the control module is used for controlling the cutting module to cut, controlling the lower rotating module to rotate automatically through the servo motor, and controlling the telescopic positioning shaft to perform telescopic motion relative to the mounting seat.
3. The SiC rounding device based on multi-power micro-jet laser of claim 2, further comprising,
the control module controls the telescopic positioning shaft to move telescopically relative to the mounting seat according to a preset first condition to drive the SiC crystal ingot to step, and the control module comprises:
and the laser control module is used for cutting the SiC crystal ingot by utilizing one of the multi-stage micro-jet lasers according to a preset second condition, and continuously carrying out corresponding switching on the micro-jet lasers after the lower fixing module drives the SiC crystal ingot to finish stepping.
4. A SiC rounding method based on multi-power micro-jet laser is applied to the SiC rounding device based on the multi-power micro-jet laser in any one of claims 1 to 3,
fixing the SiC crystal ingot by using the lower fixing module so that the SiC crystal ingot is positioned in a core area of a cutting working area of the current working micro-jet laser in the multi-power micro-jet laser head, and driving the SiC crystal ingot to perform self-rotation at a preset speed by using the lower rotating module;
performing first-stage rounding cutting on the SiC crystal ingot by using the currently working microjet laser;
and driving the SiC crystal ingot to step to a core area of a cutting working area of the next micro-jet laser by using the telescopic positioning shaft of the lower fixing module, and performing rounding at the next stage after correspondingly switching the micro-jet laser.
5. The rounding method according to claim 4,
the multi-power micro-jet laser head comprises two micro-jet lasers;
the process of carrying out first-stage rounding cutting on the SiC crystal ingot by using the currently working micro-jet laser comprises the step of carrying out first-stage rough rounding cutting on the SiC crystal ingot by using the micro-jet laser with higher power to a preset position;
and the process of performing the next-stage rounding cutting after correspondingly switching the micro-jet lasers comprises switching the multi-power micro-jet laser heads to the micro-jet lasers with lower power to perform the second-stage fine rounding cutting on the SiC crystal ingot until the rounding is completed to obtain the SiC crystal ingot seed product.
6. The rounding method according to claim 4,
the multi-power micro-jet laser head comprises two micro-jet lasers;
the process of utilizing the lower rotating module to drive the SiC crystal ingot to carry out self-rotation at the preset speed comprises the steps of utilizing the lower rotating module to drive the SiC crystal ingot to carry out self-rotation in opposite rotating directions in the first stage and the second stage respectively; the process of carrying out first-stage rounding cutting on the SiC crystal ingot by using the currently working microjet laser comprises the step of carrying out first-stage rough rounding cutting on the SiC crystal ingot by using the microjet laser with higher power to obtain a crude SiC crystal ingot seed product;
and the process of performing the rounding cutting at the next stage after correspondingly switching the micro-jet lasers comprises switching the multi-power micro-jet laser heads to the micro-jet lasers with lower power to perform the fine rounding at the second stage on the SiC crystal ingot to obtain a SiC crystal ingot seed product.
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