CN101406988A - Laser cyclotomic apparatus and method thereof - Google Patents
Laser cyclotomic apparatus and method thereof Download PDFInfo
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- CN101406988A CN101406988A CN 200710123819 CN200710123819A CN101406988A CN 101406988 A CN101406988 A CN 101406988A CN 200710123819 CN200710123819 CN 200710123819 CN 200710123819 A CN200710123819 A CN 200710123819A CN 101406988 A CN101406988 A CN 101406988A
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Abstract
The invention relates to laser circuit cutting equipment and a method thereof. The laser circle-cutting equipment comprises a work table used to support and rotate a material to be cut, a laser used to generate a laser beam, a guiding mechanism used to guide the laser beam and a focusing mechanism used to focus the laser beam and form a focus light spot on the surface of the cut material, wherein the guiding mechanism comprises a reflector and a driving mechanism which deflects the reflector so as to widen the width of a notch formed by the focus light spot. Due to the adoption of the structure, the focus light sport is deviated a certain distance by deflecting the reflector, thereby widening the width of the notch, making more laser energy irradiate the bottom part of the notch, effectively reducing the generation of remelted layers on both sides of the notch and simultaneously improving the cutting efficiency and quality.
Description
[technical field]
The present invention relates to a kind of Laser Micro-Machining equipment, particularly a kind of laser cyclotomic apparatus and method thereof.
[background technology]
In recent years, some new manufacturing and processing technologys have appearred in the fast development along with the semicon industry that relates to semi-conducting materials such as monocrystalline silicon, GaAs.For example, after monocrystalline silicon is thinned to 200 μ m or 150 μ m from 720 μ m, the material of the about 3-5mm of crystal round fringes need be got rid of.In addition, also need paste blue film, be convenient to protect the crystal column surface circuit in wafer frontside.Blue film belongs to a kind of macromolecule polymer material, and it is fine to the absorbing properties of ultraviolet band, and thickness is about 150 μ m.Therefore, need to remove the thickness of material generally about 300 μ m-350 μ m.Tradition removal method is to adopt blade cuts, and specifically, in the central shaft rotation, blade is rotation at a high speed also at workbench.But because this blade needs special manufacturing, the crystal column surface after the cutting collapses that the limit phenomenon is serious, and cutting process needs water cooling and often changes blade, causes the blade cuts technology to be unfavorable for improving the quality of wafer.
At present, along with developing rapidly of laser micro-machining technology, make laser can substitute traditional technology in semi-conductive many manufacturing process, wherein the most noticeable is that wavelength is the diode pumping solid laser of 1064nm, 532nm, 355nm and 266nm.At present, the laser cutting Silicon Wafer normally cuts into Silicon Wafer single tiny chip, and adopts light beam to fix and the method for working table movement usually.But in the application of above-mentioned cyclotomy, adopt traditional light beam to maintain static and the cutting mode of workbench rotation generally is difficult to finish at a high speed, high-quality processing.This is because existing laser is restricted to the material thickness of cutting, and the material less than 300 μ m is easier to cut saturating usually.When material was blocked up, the most of energy of laser focused on the both sides of otch, forms remelted layer, and the energy shortage that focuses on kerf bottom is with ablator, thereby material is thick more, and cutting speed is slow more.In addition, because these energy can't ablator, and the laser energy that absorbs is converted into the circuit that the surface is given in heat energy and conduction, causes circuit malfunction; The shallow surface of the otch both sides after the cutting can form burning simultaneously; Last because cutting rear section slag bonds together mutually, and causing cutting the back edge part can't come off automatically, thereby traditional cutting mode not only reduced cutting efficiency, also reduced cut quality.
[summary of the invention]
For the laser energy that overcomes in the prior art laser cyclotomic mode is difficult to arrive kerf bottom, cause the low technical problem of cutting efficiency and cut quality, the invention provides a kind of laser cyclotomic apparatus and method thereof that can improve cutting efficiency and cut quality.
The laser energy that the present invention solves in the prior art laser cyclotomic mode is difficult to arrive kerf bottom, cause the low technical scheme that technical problem adopted of cutting efficiency and cut quality to be: a kind of laser cyclotomic apparatus is provided, and this laser cyclotomic apparatus comprises: the workbench that is used to support and rotate material to be cut; Be used to produce the laser instrument of laser beam; Be used to guide the guide of laser beam; And for focusing the laser beam to the focusing of material surface to be cut with the formation focal beam spot; Wherein guide comprises speculum and is used for deflection mirror so that enlarge the driving mechanism of the kerf width of focal beam spot formation.
According to one preferred embodiment of the present invention, actuator configuration is the rotational line velocity attitude deflection focusing hot spot of vertical table.
According to one preferred embodiment of the present invention, the offset distance of focal beam spot is not more than the spot size of focal beam spot.
According to one preferred embodiment of the present invention, actuator configuration is to make the notch portion of focal beam spot formation before and after skew overlapping.
According to one preferred embodiment of the present invention, laser cyclotomic apparatus further is included in perpendicular to compression laser beam on the direction of the propagation path of laser beam so that obtain the compressing mechanism of oval focal beam spot at material surface to be cut.
According to one preferred embodiment of the present invention, compressing mechanism is configured so that the major axis of oval focal beam spot is consistent with the rotational line velocity attitude of workbench, and actuator configuration is to make the offset distance of oval focal beam spot be not more than the minor axis length of oval focal beam spot.
The laser energy that the present invention solves in the prior art laser cyclotomic mode is difficult to arrive kerf bottom, cause the low another kind of technical scheme that technical problem adopted of cutting efficiency and cut quality to be: a kind of laser cyclotomic method is provided, and this laser cyclotomic method may further comprise the steps: a. produces laser beam and compress laser beam on the direction perpendicular to the propagation path of laser beam; B. with laser beam guiding and focus on material surface to be cut to obtain oval focal beam spot; C. rotate material to be cut, make that the major axis of oval focal beam spot is consistent with the rotational line velocity attitude of material to be cut, and make the laser polarization direction of oval focal beam spot consistent with the rotational line velocity attitude; D. be offset oval focal beam spot, to enlarge the kerf width that oval focal beam spot forms.
According to one preferred embodiment of the present invention, in steps d, realize the skew of oval focal beam spot by the speculum of deflecting reflection laser beam.
According to one preferred embodiment of the present invention, in steps d, oval focal beam spot is perpendicular to the rotational line velocity attitude skew of workbench.
According to one preferred embodiment of the present invention, in steps d, the deflection angle of speculum at 0.2mrad between the 0.5mrad.
According to one preferred embodiment of the present invention, in steps d, the offset distance of oval focal beam spot at 15 μ m between the 40 μ m.
According to one preferred embodiment of the present invention, in steps d, the offset distance of oval focal beam spot is not more than the minor axis length of oval focal beam spot.
According to one preferred embodiment of the present invention, in steps d, oval focal beam spot formed notch portion before and after skew is overlapping.
By adopting said structure, make focal beam spot be offset certain distance by deflection mirror, enlarge kerf width thus, make more laser energy can be mapped to kerf bottom, reduce the generation of the remelted layer of otch both sides effectively, improved cutting efficiency and cut quality simultaneously.
[description of drawings]
Fig. 1 is the structural representation of laser cyclotomic apparatus of the present invention;
Fig. 2 shows the mirror deflection of laser cyclotomic apparatus of the present invention and the schematic diagram of the corresponding relation that focal beam spot is offset;
Fig. 3-Fig. 6 is the schematic diagram that utilizes each stage of laser cyclotomic apparatus cutting crystal wafer of the present invention.
[specific embodiment]
As shown in Figure 1, Fig. 1 is the structural representation of laser cyclotomic apparatus of the present invention.Laser cyclotomic apparatus of the present invention comprises the workbench 10 that is used to support material 2 to be cut (for example, wafer), and workbench 10 can drive the central shaft rotation of material 2 to be cut around workbench 10.In addition, this laser cyclotomic apparatus further comprises laser instrument 11, beam expanding lens 12, post lens 13, speculum 14 and condenser lens 15.Laser instrument 11 can produce the laser beam with wavelength, energy density, burst length and repetition rate of being suitable for cutting material 2 to be cut, and for example laser instrument 11 can be the frequency tripling solid laser device of operation wavelength at the diode pumping of 355nm.The laser beam that laser instrument 11 sends incides post lens 13 after beam expanding lens 12 expands bundle.Post lens 13 are being gone up this laser beam of compression perpendicular to the first direction (being the direction of vertical paper) of the propagation path of laser beam in Fig. 1, and it is constant to go up the maintenance laser beam size in the second direction (be the above-below direction of parallel paper in Fig. 1) perpendicular to propagation path and first direction.Certainly, those skilled in the art it will also be appreciated that and compress laser beam simultaneously but other different light beam compressing mechanism of compression ratio on two vertical direction of laser beam propagation path.
Laser beam incident after post lens 13 compression and is directed to condenser lens 15 by speculum 14 to speculum 14.Condenser lens 15 focuses the laser beam into the surface of material 2 to be cut, to obtain oval focal beam spot 16.In the present invention, make laser polarization direction consistent with the rotational line velocity attitude, the position of adjustable column lens 13 and angle make that the major axis of oval focal beam spot 16 is consistent with the rotational line velocity attitude of workbench 10.
As shown in Figure 2, speculum 14 can be by driving mechanism (not shown) deflection.This driving mechanism can adopt piezoelectric actuator, this piezoelectric actuator changes length according to the voltage swing that applies thereon, make and therefore make oval focal beam spot 16 correspondingly be offset certain distance d by the small angle a of speculum 14 deflections perpendicular to the rotational line velocity attitude of workbench 10.In the present embodiment, the offset distance of oval focal beam spot 16 is not more than the minor axis length of oval focal beam spot 16, so that the notch portion that oval focal beam spot 16 forms on the surface of material 2 to be cut is overlapping, enlarge kerf width thus, allow enough laser energies arrive the bottom of otch.Certainly, driving mechanism of the present invention can use in conjunction with the focal beam spot of traditional circular focal beam spot or other shape fully, and the offset distance of focal beam spot should be not more than the spot size of focal beam spot itself at this moment.
In the present embodiment, the deflection angle a of speculum 14 preferably at 0.2mrad between the 0.5mrad, 0.3mrad more preferably.The facula deviation of oval focal beam spot 16 apart from d then preferably at 15 μ m between the 40 μ m, 25 μ m more preferably.
As Fig. 3-shown in Figure 6, Fig. 3-Fig. 6 is the schematic diagram that utilizes each stage of laser cyclotomic apparatus cutting crystal wafer of the present invention.
Should use in the example, material 2 to be cut mainly is made up of monocrystalline silicon layer 21, adhesion layer 22 and diaphragm 23, and the main technologic parameters that is adopted is as follows:
Diameter: 203mm
Gross thickness: 350 μ m (monocrystalline silicon layer: 200 μ m, adhesion layer: 40 μ m, diaphragm: 110 μ m)
Optical maser wavelength: 355nm
Average output power: 7W
Repetition rate: 40KHz
Focus on the ellipse light spot size: 25 μ m * 75 μ m (ellipse short shaft * major axis)
Workbench rotary speed: 60 rev/mins of (linear velocities: 628mm/s)
Beam deviation is moving apart from d=25 μ m
Process time: 90s
As Fig. 3-shown in Figure 6, in cutting process, at first material 2 to be cut is placed on the workbench 10; Manually or otherwise the distance of adjustable column lens 13 makes that with angle the major axis of oval focal beam spot 16 is consistent with the rotational line velocity attitude of workbench 10; Workbench 10 360 ° of rotations or other suitable angle are so that produce first otch 41 in monocrystalline silicon layer 21; Deflection mirror 14 subsequently, make oval focal beam spot 16 outwards be offset certain distance, so that in monocrystalline silicon layer 21, produce and first otch, 41 partly overlapping second otch 42, enlarge the width of whole otch thus, make enough laser energies arrive kerf bottom.Subsequently, oval focal beam spot 16 can further outwards be offset or skew back, to cut next time.So repeatedly multiple scanning progressively produces two or more partly overlapping otch on monocrystalline silicon layer 21, adhesion layer 32 and diaphragm 33, finally cut off whole material to be cut 2.
The invention has the advantages that: at first, pass through deflection mirror, make focal beam spot be offset certain slight distance, enlarge the formed kerf width of focal beam spot thus, the residue major part is all taken away by the smoking system with vaporization slag form, the cutting section slag is less, thereby more energy incides kerf bottom, has accelerated material ablation.In addition, crystal round fringes intensity also is improved, and does not have the bonding between the slag, and the saturating material back edge part of laser cutting can come off automatically.Secondly,, optimized the power density of focal beam spot, utilized laser energy fully, increased utilization ratio of laser energy, improved the material cutting efficiency by adopting oval focal beam spot.
In the above-described embodiments, only the present invention has been carried out exemplary description, but those skilled in the art can design various embodiments according to different actual needs under the situation of the scope and spirit that do not break away from the present invention and protected.
Claims (13)
1. laser cyclotomic apparatus, described laser cyclotomic apparatus comprises:
Be used to support and rotate the workbench of material to be cut;
Be used to produce the laser instrument of laser beam;
Be used to guide the guide of described laser beam; And
Be used for described laser beam is focused on described material surface to be cut to form the focusing of focal beam spot;
It is characterized in that: described guide comprises speculum and is used for the described speculum of deflection so that enlarge the driving mechanism of the kerf width of described focal beam spot formation.
2. laser cyclotomic apparatus according to claim 1 is characterized in that: described actuator configuration is that the rotational line velocity attitude of vertical described workbench is offset described focal beam spot.
3. laser cyclotomic apparatus according to claim 2 is characterized in that: the offset distance of described focal beam spot is not more than the spot size of described focal beam spot.
4. laser cyclotomic apparatus according to claim 2 is characterized in that: described actuator configuration is that the notch portion that described focal beam spot is formed before and after skew is overlapping.
5. laser cyclotomic apparatus according to claim 2 is characterized in that: described laser cyclotomic apparatus further is included in perpendicular to the described laser beam of compression on the direction of the propagation path of described laser beam so that obtain the compressing mechanism of oval focal beam spot at described material surface to be cut.
6. laser cyclotomic apparatus according to claim 5, it is characterized in that: described compressing mechanism is configured so that the major axis of described oval focal beam spot is consistent with the rotational line velocity attitude of described workbench, and described actuator configuration is to make the offset distance of described oval focal beam spot be not more than the minor axis length of described oval focal beam spot.
7. laser cyclotomic method, it is characterized in that: described laser cyclotomic method may further comprise the steps:
A. produce laser beam and the described laser beam of compression on perpendicular to a direction of the propagation path of described laser beam;
B. with the guiding of described laser beam and focus on material surface to be cut to obtain oval focal beam spot;
C. rotate described material to be cut, make that the major axis of described oval focal beam spot is consistent with the rotational line velocity attitude of described material to be cut, and make the laser polarization direction of described oval focal beam spot consistent with described rotational line velocity attitude;
D. be offset described oval focal beam spot, to enlarge the kerf width that described oval focal beam spot forms.
8. laser cyclotomic method according to claim 7 is characterized in that: in described steps d, realize the skew of described oval focal beam spot by the speculum of the described laser beam of deflecting reflection.
9. laser cyclotomic method according to claim 8 is characterized in that: in described steps d, described oval focal beam spot is perpendicular to the rotational line velocity attitude skew of described workbench.
10. laser cyclotomic method according to claim 8 is characterized in that: in described steps d, the deflection angle of described speculum at 0.2mrad between the 0.5mrad.
11. laser cyclotomic method according to claim 8 is characterized in that: in described steps d, the offset distance of described oval focal beam spot at 15 μ m between the 40 μ m.
12. laser cyclotomic method according to claim 8 is characterized in that: in described steps d, the offset distance of described oval focal beam spot is not more than the minor axis length of described oval focal beam spot.
13. laser cyclotomic method according to claim 8 is characterized in that: in described steps d, described oval focal beam spot formed notch portion before and after skew is overlapping.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200710123819 CN101406988B (en) | 2007-10-12 | 2007-10-12 | Laser cyclotomic apparatus and method thereof |
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| CN 200710123819 CN101406988B (en) | 2007-10-12 | 2007-10-12 | Laser cyclotomic apparatus and method thereof |
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| CN101406988A true CN101406988A (en) | 2009-04-15 |
| CN101406988B CN101406988B (en) | 2011-06-22 |
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Cited By (10)
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| CN102554465A (en) * | 2012-02-08 | 2012-07-11 | 中国科学院福建物质结构研究所 | Rotary optical design applied to laser machining |
| CN102896430A (en) * | 2012-08-29 | 2013-01-30 | 肖和平 | Laser processing method of semiconductor materials |
| CN103262233A (en) * | 2010-10-25 | 2013-08-21 | 若特自动控制公司 | Circuit board support for laser cutting |
| CN108789886A (en) * | 2018-05-31 | 2018-11-13 | 中国科学院西安光学精密机械研究所 | Cutting and splitting method for transparent hard and brittle material |
| CN109991754A (en) * | 2018-01-02 | 2019-07-09 | 财团法人工业技术研究院 | Light method and out electro-optical device out |
| CN112192045A (en) * | 2020-10-10 | 2021-01-08 | 珠海兴业新材料科技有限公司 | Laser cutting method for light adjusting film or electrode thereof |
| CN113059279A (en) * | 2021-03-18 | 2021-07-02 | 广东宏石激光技术股份有限公司 | Laser cutting device and cutting method thereof |
| CN114571093A (en) * | 2022-01-19 | 2022-06-03 | 西安晟光硅研半导体科技有限公司 | SiC rounding device based on multi-power micro-jet laser and rounding method thereof |
| CN116765593A (en) * | 2021-11-24 | 2023-09-19 | 郭辉 | Water jet laser rounding system of conductive SiC crystal ingot |
| CN116765594A (en) * | 2021-11-24 | 2023-09-19 | 郭辉 | Water jet laser rounding system of semi-insulating SiC crystal ingot |
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| US4461947A (en) * | 1982-08-24 | 1984-07-24 | Allied Corporation | Rotating laser beam with coincident gas jet |
| EP0407969B1 (en) * | 1989-07-14 | 1993-10-06 | MAHO Aktiengesellschaft | Process and device for manufacturing hollow spaces in workpieces using a laser beam |
| JP2005334925A (en) * | 2004-05-26 | 2005-12-08 | Yamazaki Mazak Corp | Controller for driving shaft of reflection mirror in laser beam machine |
| CN2776618Y (en) * | 2004-12-10 | 2006-05-03 | 上海市激光技术研究所 | Laser etching machine having feed back control |
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| CN103262233A (en) * | 2010-10-25 | 2013-08-21 | 若特自动控制公司 | Circuit board support for laser cutting |
| CN103262233B (en) * | 2010-10-25 | 2016-04-06 | 若特自动控制公司 | For the circuit board support of laser cutting |
| US9962790B2 (en) | 2010-10-25 | 2018-05-08 | Jot Automation Oy | Circuit board support for laser cutting |
| CN102554465B (en) * | 2012-02-08 | 2016-07-20 | 中国科学院福建物质结构研究所 | A kind of rotating optics being applied to Laser Processing |
| CN102554465A (en) * | 2012-02-08 | 2012-07-11 | 中国科学院福建物质结构研究所 | Rotary optical design applied to laser machining |
| CN102896430A (en) * | 2012-08-29 | 2013-01-30 | 肖和平 | Laser processing method of semiconductor materials |
| CN109991754B (en) * | 2018-01-02 | 2022-01-11 | 财团法人工业技术研究院 | Light emitting method and light emitting device |
| CN109991754A (en) * | 2018-01-02 | 2019-07-09 | 财团法人工业技术研究院 | Light method and out electro-optical device out |
| CN108789886A (en) * | 2018-05-31 | 2018-11-13 | 中国科学院西安光学精密机械研究所 | Cutting and splitting method for transparent hard and brittle material |
| CN112192045A (en) * | 2020-10-10 | 2021-01-08 | 珠海兴业新材料科技有限公司 | Laser cutting method for light adjusting film or electrode thereof |
| CN113059279A (en) * | 2021-03-18 | 2021-07-02 | 广东宏石激光技术股份有限公司 | Laser cutting device and cutting method thereof |
| CN116765593A (en) * | 2021-11-24 | 2023-09-19 | 郭辉 | Water jet laser rounding system of conductive SiC crystal ingot |
| CN116765594A (en) * | 2021-11-24 | 2023-09-19 | 郭辉 | Water jet laser rounding system of semi-insulating SiC crystal ingot |
| CN114571093A (en) * | 2022-01-19 | 2022-06-03 | 西安晟光硅研半导体科技有限公司 | SiC rounding device based on multi-power micro-jet laser and rounding method thereof |
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| CN101406988B (en) | 2011-06-22 |
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Address after: 518051 Dazu laser building, 9 new West Road, North Nanshan District high tech park, Shenzhen, Guangdong Patentee after: HANS LASER TECHNOLOGY INDUSTRY GROUP CO., LTD. Address before: No. 5 road 518057 in Guangdong province Shenzhen city Nanshan District high tech park of Pine Hill Factory District No. 8 Patentee before: Dazu Laser Sci. & Tech. Co., Ltd., Shenzhen |
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