CN116765594A - Water jet laser rounding system of semi-insulating SiC crystal ingot - Google Patents
Water jet laser rounding system of semi-insulating SiC crystal ingot Download PDFInfo
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- CN116765594A CN116765594A CN202111407816.2A CN202111407816A CN116765594A CN 116765594 A CN116765594 A CN 116765594A CN 202111407816 A CN202111407816 A CN 202111407816A CN 116765594 A CN116765594 A CN 116765594A
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- 238000005520 cutting process Methods 0.000 claims abstract description 52
- 210000000078 claw Anatomy 0.000 claims abstract description 39
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- 238000005563 spheronization Methods 0.000 claims description 2
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 98
- 229910010271 silicon carbide Inorganic materials 0.000 description 98
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
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- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
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- 238000009966 trimming Methods 0.000 description 3
- 244000309464 bull Species 0.000 description 2
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Abstract
The invention provides a water jet laser rounding system of a semi-insulating SiC crystal ingot, which comprises the following components: the device comprises a rotating device and an ingot seed crystal position clamp, wherein the ingot seed crystal position clamp is positioned above the rotating device and synchronously rotates with the rotating device, a laser micro-water jet is used for carrying out a rounding process on the SiC ingot, a water guide laser head is perpendicular to a rotating plane of the rotating device or parallel to a tangential direction of the rotating plane along a rounding track, a servo motor drives a pinion, the pinion drives a gear wheel to rotate, and a mounting seat above the gear wheel is connected with a chuck body so as to drive the ingot seed crystal position clamp to rotate, and the SiC ingot is driven to carry out circular motion so that a cutting point of the SiC ingot is positioned in a core area of a cutting area of the laser micro-water jet. According to the invention, the soft claw is controlled to manually or automatically accurately fix the position of the rounding cutting point of the SiC ingot by the tightening and loosening device, so that the quick rounding of the material is realized, and the processing efficiency and the accuracy of the SiC ingot can be improved.
Description
Technical Field
The invention belongs to the technical field of processing of semiconductor materials, and particularly relates to a water jet laser rounding system of a semi-insulating SiC ingot.
Background
SiC is a typical hard and brittle material with a mohs hardness of 9.2 to 9.5 next to diamond, making its processing and fabrication very difficult. The manufacturing process of the SiC single crystal substrate can be divided into several stages of dicing, lapping, and polishing. Cutting is a first critical process for manufacturing SiC single crystal substrates, and its processing quality directly affects material cutting loss, material removal in subsequent processes, final processing quality (surface roughness and flatness), product yield, processing cost, and the like. As the development of crystal growth technology and market demand continue to increase, the demand for large-diameter SiC single crystal substrates is increasing; at present, the transition from 6 inches to 8 inches of SiC single crystal substrates brings serious challenges to the traditional wafer cutting technology, and how to cut SiC single crystals with high efficiency, high quality, low cost, low damage and high yield becomes an important research direction in the current SiC single crystal substrate processing field.
At present, the rounding in the single crystal SiC cutting process is mostly carried out by adopting a diamond grinding wheel and SiC crystal opposite grinding method to remove irregular parts, so that the SiC crystal is processed into a column shape to prepare for subsequent slicing.
However, since the silicon carbide single crystal has very high mohs hardness, extremely low fracture toughness and extremely small critical cutting depth (nano-scale), in order to make the rounded ingot have higher quality and yield, plastic domain rounding of SiC should be achieved at less than the critical cutting depth of SiC single crystal. Studies of conventional diamond wheel spheronized SiC single crystals have shown that even at very small feed rates, the material removal mode of SiC is a hybrid mode of brittle fracture and plastic removal. The brittle fracture mode is realized through initiation, propagation and extension and crossing of microcracks in the hard and brittle material, so that the conventional diamond grinding wheel rounding method can easily generate microcracks on the surface of the SiC ingot and generate damaged layers on the subsurface, and the surface and subsurface quality of the SiC ingot are greatly affected. On the other hand, when a large-size ingot is rounded by using a common diamond grinding wheel, the abrasion degree of different parts of the diamond grinding wheel is different due to the large circumference of the ingot and the high degree of initial crystal irregularity, the feeding speed is not well controlled, and the manual depth intervention is needed in the cutting process, so that the rounding efficiency of the large-size SiC ingot by using the method is low and the yield is not high. Therefore, it is difficult to round the hard and brittle materials in a single processing mode in many ways, how to improve the rounding efficiency and accuracy of the hard and brittle materials such as SiC, and the search for an effective new rounding method has become an urgent problem to be solved.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a water jet laser rounding system of a semi-insulating SiC ingot. The technical problems to be solved by the invention are realized by the following technical scheme:
the invention provides a water jet laser rounding system of a semi-insulating SiC crystal ingot, which comprises the following components: a rotating device and a clamp of a seed crystal position of the SiC ingot, wherein the clamp of the seed crystal position is positioned on the rotating device and rotates synchronously with the rotating device,
the rotating device comprises a fixed disc, a mounting frame, a large gear, a pinion and a first servo motor, wherein the first servo motor is fixedly connected with the pinion through a hole on the fixed disc, the pinion is externally meshed with the large gear, the mounting seat is positioned at the center of the large gear, and a notch is formed in the mounting seat;
the crystal ingot seed part fixture comprises a chuck body, a clamping and loosening device and a positioning shaft, wherein the positioning shaft is positioned at the center of the bottom of the chuck body, the positioning shaft is convexly arranged to penetrate through the chuck body and is mechanically clamped with a notch on a mounting seat, the upper end surface of the positioning shaft is contacted with the lower end surface of a semi-insulating SiC crystal ingot placed on the chuck body to be matched with the semi-insulating SiC crystal ingot for positioning, the clamping and loosening device is positioned in the chuck body and comprises a plurality of soft clamping jaws and a soft clamping jaw shifting device, the soft clamping jaws are uniformly arranged on the soft clamping jaw shifting device, the soft clamping jaw shifting device controls the plurality of soft clamping jaws to mutually match with one another to manually clamp or automatically clamp the semi-insulating SiC crystal ingot on the chuck body through the centripetal motion close to the positioning shaft, the semi-insulating SiC crystal ingot on the chuck body is controlled to be manually loosened or automatically loosened through the centrifugal motion away from the positioning shaft,
when the SiC crystal ingot is round, the water guide laser head is perpendicular to the rotating plane of the rotating device or parallel to the rotating plane along the tangential direction of the round-rolling track, the semi-insulating SiC crystal ingot on the chuck body is manually or automatically clamped, the first servo motor drives the pinion, the pinion drives the large gear to rotate, the mounting seat above the large gear is connected with the crystal ingot seed part clamp to complete power transmission and speed reduction, thereby driving the crystal ingot seed part clamp to rotate, driving the SiC crystal ingot to do circular motion so that the round-rolling track of the SiC crystal ingot is located in the core area of the cutting working area of the water guide laser head, and automatically adjusting according to the depth of a preset notch so that the cutting position of the SiC crystal ingot is always located in the core area of the water guide laser head cutting working area, and the round-rolling process of the SiC crystal ingot is completed.
Optionally, the tightening and loosening device includes: a manual tightening and loosening device composed of a chassis, a spiral groove, a spiral disc, a claw matching block and a manual pinion and an automatic tightening device composed of the chassis, the spiral groove, the spiral disc, the claw matching block, a planetary gear, a sun gear and an outer wheel,
in the manual tightening and loosening device, a spiral disc is positioned on a chassis, a spiral groove is formed in the spiral disc, a guide piece is arranged below a claw matching block, a bayonet matched and clamped with a claw is arranged above the claw matching block, the guide piece of the claw matching block is positioned in the spiral groove, a manual pinion is positioned below the spiral disc and meshed with the spiral disc, the manual pinion is manually rotated to drive the spiral disc to rotate, and the spiral disc drives the claw matching block and the claw to move centripetally close to a positioning shaft so as to manually clamp a semi-insulating SiC crystal ingot positioned on a chuck body or move centrifugally away from the positioning shaft so as to manually loosen the semi-insulating SiC crystal ingot positioned on the chuck body;
in the automatic clamping and loosening device, a spiral disc is fixed with an outer wheel, the outer wheel is positioned inside a chassis, the outer wheel is in inner engagement with a planetary gear, a sun wheel is in outer engagement with the planetary gear, a second servo motor is fixedly connected to the center of the sun wheel, a spiral groove is formed in the spiral disc, a guide piece is arranged below a claw matching block, a bayonet which is in fit and clamping connection with the claw is arranged above the claw matching block, the guide piece of the claw matching block is positioned in the spiral groove, the second servo motor automatically rotates to drive the sun wheel to rotate, the sun wheel rotates to drive the spiral disc fixedly connected with the outer wheel through the planetary gear, and the spiral disc drives the claw matching block and the claw to perform centripetal motion close to a positioning shaft so as to automatically clamp a semi-insulating SiC ingot positioned on a chuck body or perform centrifugal motion away from the positioning shaft, so as to automatically loosen the semi-insulating SiC ingot positioned on the chuck body.
Wherein the guide member is shaped as teeth, and the guide member is engaged with the spiral groove.
Optionally, the water guide laser head accurately moves in the direction of X, Y, Z triaxial according to the size of the SiC ingot rounding, the water guide laser head is fixed on an XY plane during rounding, the rotating device drives the SiC ingot to do circular motion so that the rounding track of the SiC ingot is located in a core area of a cutting working area of the water guide laser head, and on a Z plane, the water guide laser head is matched with a transmission shaft according to the cutting depth, and the rotating device is controlled to drive the SiC ingot to move on the Z plane so as to control the cutting depth of the SiC ingot.
Optionally, in the process that the rotation plane of the water guide laser head is parallel to the rotation device and is rounded along the tangential direction of the SiC ingot rounding track, the water guide laser head can move in the section of the SiC ingot rounding track, and the rotation device drives the SiC ingot to do circular motion so that the SiC ingot rounding track is positioned in the core area of the water guide laser head cutting working area, so that rounding is achieved.
The invention provides a water jet laser rounding system of a semi-insulating SiC crystal ingot, which comprises the following components: the crystal ingot seed part clamp is positioned above the rotating device and rotates synchronously with the rotating device; setting a SiC ingot rounding track according to crystal processing specifications before rounding, and positioning a laser water jet device in the XY direction; in the semi-insulating SiC crystal ingot rounding process, a servo motor drives a pinion, the pinion drives a bull gear to rotate, a mounting seat above the bull gear is connected with a chuck to finish power transmission and speed reduction, so that a crystal seed part clamp is driven to rotate to drive the semi-insulating SiC crystal ingot to do circular motion, a laser water jet device is adjusted in the Z-axis direction according to the cutting depth in the cutting process, and therefore the cutting point of the semi-insulating SiC crystal ingot is located in a working area of a laser micro water jet to finish the semi-insulating SiC crystal ingot rounding process. According to the invention, the soft claw and the modulation in the Z-axis direction of the laser water jet can be controlled by the tightening and loosening device in the micro water jet laser working area, the position of the rounding cutting point of the SiC crystal ingot can be manually or automatically and accurately fixed, and the rapid rounding of the material is realized, so that the processing efficiency and the processing precision of the semi-insulating SiC crystal ingot can be improved. The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
FIG. 1 is a schematic diagram of comparison between conventional laser cutting and micro-water jet laser cutting according to an embodiment of the present invention;
fig. 2 is a schematic diagram of an application of a laser micro-water jet provided in an embodiment of the present invention in semiconductor dicing;
FIG. 3 is a schematic diagram of a water jet laser spheronization system for semi-insulating SiC boules provided by an embodiment of the invention;
FIG. 4 is a schematic view of a rotary device according to an embodiment of the present invention;
FIG. 5 is a schematic view of an ingot seed portion clamp provided in an embodiment of the invention;
FIG. 6 is a side view of an ingot seed portion clamp provided by an embodiment of the invention;
FIG. 7a is a schematic view of a round-off along a tangent to a round-off track according to an embodiment of the present invention;
FIG. 7b is a schematic view of a manual tightening and loosening device provided by an embodiment of the present invention;
fig. 8 is a detailed schematic diagram of an automatic tightening and loosening device according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but embodiments of the present invention are not limited thereto.
Before describing the invention, firstly, a laser micro-water jet technology and advantages thereof in the rounding processing technology related to the invention are described.
The laser micro-water jet is an advanced technology for realizing processing by guiding laser by a fine water jet, and is also called as a laser micro-water jet processing technology. The technology couples the laser beam into a high-speed water jet after focusing, and the laser is totally reflected on the inner surface of the water beam due to the difference of refractive indexes of water and air, so that concentrated laser energy is limited in the water beam. During processing, the laser beam focused on the nozzle position forms total reflection on the inner wall of a fine water column, then generates an energy beam with uniformly distributed section energy, and guides the energy beam to the surface of a workpiece to realize workpiece processing. The method is a leading solution in industry in the industries of manufacturing hot end components of an aircraft engine, machining CFRP structural parts of the aircraft, cutting natural diamonds, cutting large-scale integrated circuits (LSIs) and the like.
The laser micro-water jet has advantages over the traditional laser processing technique including: (1) focus is not required. The non-one-sided processing has no problem, 3D cutting can be carried out, and the processing depth can reach several centimeters; (2) The micro water jet keeps the laser beams in the parallel water jet completely parallel, and the columnar laser beams realize parallel trimming, so that high-quality processing walls and trimming are ensured; (3) The large length-width ratio can realize the trimming width below 30 mu m, and deeper holes can be drilled with minimal material loss; (4) The cooling action of the water jet avoids thermal damage and material changes to maintain the designed fatigue strength; (5) The water film eliminates the accumulation and pollution of the processing waste particles, and a protective layer on the processing surface is not needed; (6) The high kinetic energy of the water jet dissipates the melted waste particles, avoids burrs, and cleans the high quality formed machined surface, as shown in fig. 1.
Laser micro-water jet processing technology is widely applied and excellent in large-scale integrated circuits. Several applications are presented below: (1) multiple project silicon substrate dicing. In integrated circuit processing, integrated circuits can be processed for a plurality of items on a large round silicon wafer, so that the round silicon wafer is fully utilized, as shown in fig. 2, sub-graph (a). By adopting the laser micro-water jet processing technology, integrated circuits of different projects can be cut off from a round wafer respectively, the cutting effect is good, the yield is very high, and the cutting effect is far better than that of a diamond blade. (2) GaAs (gallium arsenide) dicing. GaAs is the most common composite semiconductor material and is difficult to process due to its hard brittleness. Machining is a previously common method but is prone to chipping. The laser micro-water jet is adopted, so that the processing speed is high, mechanical damage and thermal damage are avoided. Processed products such as processed slag and the like are dissolved in water, and the circuit part of the gallium arsenide sheet is not damaged. Shown in fig. 2, sub-graph (b), is lancing a 100 μm thick gallium arsenide wafer. An optical fiber Nd of 100W average power was used: YAG laser, slit width 28 μm. FIG. 2 shows the cutting of Low-k (Low dielectric constant) material. The material is a common material for large-scale integrated circuit chips, has high brittleness and is easy to crack during machining. The laser micro-water jet can obtain good processing effect, and the cutting seam of a 100 mu m thick wafer is shown in a neutron graph (c) in fig. 2, and has a width of 30 mu m and good processing quality. The low-k layer which is not contacted with the water beam is almost weak and has heat effect in the processing process, so that the dielectric property of the circuit board is not affected. Therefore, the invention adopts the laser micro-water jet to carry out rounding by matching with the rounding device of the invention, and the water jet laser rounding system for rounding the semi-insulating SiC crystal ingot is introduced below.
As shown in fig. 3, the water jet laser rounding system of semi-insulating SiC ingots provided by the present invention comprises: a rotating device and a crystal ingot seed part clamp, wherein the crystal ingot seed part clamp is positioned on the rotating device and rotates synchronously with the rotating device,
as shown in fig. 4, the rotating device comprises a fixed disc, a mounting frame, a large gear, a small gear and a first servo motor, wherein the first servo motor is fixedly connected with the small gear through a hole on the fixed disc, the small gear is externally meshed with the large gear, a mounting seat is positioned at the center of the large gear, and a notch is formed in the mounting seat;
it is worth to say that, the pivot joint of first servo motor is in the central point of pinion, and servo motor rotates, and the pivot drives pinion rotation.
Referring to fig. 4, a fixed disk is connected with a mounting frame, a rotating device, an ingot seed crystal part clamp and a semi-insulating SiC ingot play a role in fixing and supporting, a motor drives a pinion, the pinion drives a large gear to rotate, a mounting seat above the large gear is connected with a chuck to complete power transmission and speed reduction, and accordingly the chuck is driven to rotate to drive the SiC ingot to do circular motion, and a silicon carbide ingot cylindrical column cutting process is completed.
As shown in FIG. 5, the seed crystal position fixture of the ingot comprises a chuck body 1, a clamping and loosening device and a positioning shaft 3, wherein the positioning shaft 3 is positioned at the center of the bottom of the chuck body 1, the clamping and loosening device is arranged in the chuck body 1, the positioning shaft 3 is convexly arranged to penetrate through the chuck body 1 and is mechanically clamped with a notch on a mounting seat, the upper end surface of the positioning shaft 3 is contacted with the lower end surface of a semi-insulating SiC ingot placed on the chuck body 1 to be matched with the semi-insulating SiC ingot for positioning, the clamping and loosening device is positioned in the chuck body 1 and comprises a plurality of soft clamping claws 2 and a soft clamping claw shifting device, the soft clamping claw shifting device is uniformly arranged on the soft clamping claw shifting device, the soft clamping claw shifting device controls the plurality of soft clamping claws 2 to be mutually matched with one another to manually clamp or automatically clamp the semi-insulating SiC ingot on the chuck body 1 through centripetal movement close to the positioning shaft 3, the semi-insulating SiC ingot on the chuck body 1 is controlled through centrifugal movement away from the positioning shaft 3,
it is worth to say that the positioning principle process of the invention: because the clamping length of the ingot at the chuck body end is smaller than 1mm, as shown in fig. 6, the positioning shaft 3 end plane and the semi-insulating SiC ingot 4 plane are adopted for matching positioning, and the positioning is rapid and accurate.
When the SiC crystal ingot is round, the water guide laser head is perpendicular to the rotating plane of the rotating device or parallel to the rotating plane along the tangential direction of the round-rolling track, the semi-insulating SiC crystal ingot on the chuck body is manually or automatically clamped, the first servo motor drives the pinion, the pinion drives the large gear to rotate, the mounting seat above the large gear is connected with the crystal ingot seed part clamp to complete power transmission and speed reduction, thereby driving the crystal ingot seed part clamp to rotate, driving the SiC crystal ingot to do circular motion so that the round-rolling track of the SiC crystal ingot is located in the core area of the cutting working area of the water guide laser head, and automatically adjusting according to the depth of a preset notch so that the cutting position of the SiC crystal ingot is always located in the core area of the water guide laser head cutting working area, and the round-rolling process of the SiC crystal ingot is completed.
According to the invention, the water guide laser head accurately moves in the X, Y, Z triaxial directions according to the rounding size of the SiC crystal ingot, the water guide laser head is fixed on an XY plane during rounding, the rotating device drives the SiC crystal ingot to do circular motion so that the rounding track of the SiC crystal ingot is positioned in the core area of the cutting working area of the water guide laser head, and on the Z plane, the water guide laser head is matched with the transmission shaft according to the cutting depth, and the rotating device is controlled to drive the SiC crystal ingot to move on the Z plane so as to control the cutting depth of the SiC crystal ingot.
In the process that the water guide laser head is parallel to the rotation plane of the rotation device and rounds along the tangential direction of the SiC crystal ingot round-rolling track, the water guide laser head can move in the section of the SiC crystal ingot round-rolling track, and the rotation device drives the SiC crystal ingot to do circular motion so that the round-rolling track of the SiC crystal ingot is positioned in the core area of the water guide laser head cutting working area, so that round-rolling is realized.
The rounding process of the invention is to cut SiC crystal material along the tangential direction of the set crystal rounding track by laser water jet beam (or flat laser beam) so as to realize SiC ingot rounding. In the process of rounding, the laser water jet is kept fixed in the tangential direction of the rounding track of the ingot (can move in the tangential plane of the rounding cylinder), and the crystal rotates around the center point of the rounding track, so that the crystal rounding is realized.
Referring to fig. 7a, the rounding process according to the present invention is to implement SiC ingot rounding by cutting SiC crystalline material along a tangential direction of a set crystal rounding trajectory by a laser water jet beam (or a flat laser beam). In the process of rounding, the laser water jet is kept fixed in the tangential direction of the rounding track of the ingot (can move in the tangential plane of the rounding cylinder), and the crystal rotates around the center point of the rounding track, so that the crystal rounding is realized.
In the process of rounding the SiC crystal by the laser micro-water jet, the laser micro-water jet is automatically adjusted in the Z-axis direction according to the depth of a cutting point so as to ensure the cutting efficiency and accuracy.
According to the semi-insulating SiC crystal ingot laser water jet rounding device, the tightening and loosening device can fix crystal ingot seed crystal positions to achieve crystal ingot fixation, during rounding, laser water jet is adjusted to a proper position in an XY plane according to a set rounding track and then fixed, the rotation device and the crystal ingot seed crystal position clamp synchronously rotate, so that wafer rounding is achieved, and in the process, the crystal ingot seed crystal position clamp is matched with the laser water jet through the telescopic transmission shaft and adjustment of the laser water jet in the Z-axis direction, so that cutting points are completely located in a water guide laser core working area, and cutting efficiency and accuracy are guaranteed.
As shown in fig. 7b, the tightening and loosening apparatus includes: a manual tightening and loosening device composed of a chassis, a spiral groove 5, a spiral disc 6, a claw matching block 7 and a manual pinion 8, and an automatic tightening device composed of the chassis, the spiral groove 5, the spiral disc 6, the claw matching block 7, a planetary gear 9, a sun gear 10 and an outer wheel 11,
referring to fig. 6, in the manual tightening and loosening device, a spiral disc 6 is located on a chassis, a spiral groove 5 is formed in the spiral disc 6, a guide piece is arranged below a jaw matching block 7, a bayonet matched and clamped with a jaw 2 is formed above the jaw matching block, the guide piece of the jaw matching block 7 is located in the spiral groove 5, a manual pinion 8 is located below the spiral disc 6 and meshed with the spiral disc 6, the manual pinion 8 is manually rotated to drive the spiral disc 6 to rotate, and the spiral disc 6 drives the jaw matching block 7 and the jaw 2 to move centripetally close to a positioning shaft 3 so as to manually clamp a semi-insulating SiC crystal ingot 4 located on a chuck body or move centrifugally away from the positioning shaft 3 so as to manually loosen the semi-insulating SiC crystal ingot 4 located on the chuck body;
as shown in fig. 8, in the automatic tightening and loosening device, a spiral disc 6 is fixed with an outer wheel 11, the outer wheel 11 is positioned in a chassis, the outer wheel 11 is internally meshed with a planetary gear 9, a sun wheel 10 is externally meshed with the planetary gear 9, the center of the sun wheel 10 is fixedly connected with a second servo motor, a spiral groove 5 is formed in the spiral disc 6, a guide piece is arranged below a claw matching block 7, a bayonet matched and clamped with a claw 2 is arranged above the claw matching block 7, the guide piece of the claw matching block 7 is positioned in the spiral groove 5, the second servo motor automatically rotates to drive the sun wheel 10 to rotate, the sun wheel 10 rotates through the planetary gear 9 to drive the spiral disc 6 fixedly connected with the outer wheel 11, and the spiral disc 6 drives the claw matching block 7 and the claw 2 to perform centripetal motion close to a positioning shaft 3 so as to automatically clamp a semi-insulating SiC crystal ingot 4 positioned on a chuck body or perform centrifugal motion away from the positioning shaft 3, so as to automatically loosen the semi-insulating SiC crystal ingot 4 positioned on the chuck body.
Wherein the guide member is shaped as teeth, and the guide member is engaged with the spiral groove.
The invention provides a water jet laser rounding system of a semi-insulating SiC crystal ingot, which comprises the following components: the crystal ingot seed crystal position clamp is positioned above the rotating device and synchronously rotates with the rotating device, and the laser micro-water jet is vertically arranged above the rotating device; in the process of rounding the semi-insulating SiC crystal ingot by the laser micro-water jet, a pinion is driven by a servo motor, a gear wheel is driven by the pinion to rotate, a mounting seat above the gear wheel is connected with a chuck body to complete power transmission and speed reduction, so that a crystal seed part clamp is driven to rotate to drive the semi-insulating SiC crystal ingot to do circular motion, a cutting point of the semi-insulating SiC crystal ingot is located in a working area of the laser micro-water jet, and meanwhile, a telescopic transmission shaft and the laser micro-water jet are automatically adjusted and matched in the Z-axis direction according to the depth of the cutting point to form a cutting point located in a core area of the working area of the water jet, so that the semi-insulating SiC crystal ingot rounding process is completed. According to the invention, the soft claw is controlled to manually or automatically accurately fix the positions of the SiC crystal ingot and the cutting point of the material in the micro-water jet laser working area by the clamping and loosening device, so that the rapid rounding of the material is realized, and the processing efficiency and the precision of the semi-insulating SiC crystal ingot can be improved.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Further, one skilled in the art can engage and combine the different embodiments or examples described in this specification.
The foregoing is a further detailed description of the invention in connection with the preferred embodiments, and it is not intended that the invention be limited to the specific embodiments described. It will be apparent to those skilled in the art that several simple deductions or substitutions may be made without departing from the spirit of the invention, and these should be considered to be within the scope of the invention.
Claims (5)
1. A water jet laser spheronization system of a semi-insulating SiC ingot, comprising: a rotating device and a clamp of a seed crystal position of the SiC ingot, wherein the clamp of the seed crystal position is positioned on the rotating device and rotates synchronously with the rotating device,
the rotating device comprises a fixed disc, a mounting frame, a large gear, a pinion and a first servo motor, wherein the first servo motor is fixedly connected with the pinion through a hole in the fixed disc, the pinion is externally meshed with the large gear, the mounting seat is positioned at the center of the large gear, and a notch is formed in the mounting seat;
the crystal ingot seed part fixture comprises a chuck body, a clamping and loosening device and a positioning shaft, wherein the positioning shaft is positioned at the center of the bottom of the chuck body, the positioning shaft is convexly arranged to penetrate through the chuck body and is mechanically clamped with a notch on the mounting seat, the upper end surface of the positioning shaft is contacted with the lower end surface of a semi-insulating SiC crystal ingot placed on the chuck body to be matched with the semi-insulating SiC crystal ingot for positioning, the clamping and loosening device is positioned in the chuck body and comprises a plurality of soft clamping jaws and a soft clamping jaw shifting device, the soft clamping jaws are uniformly arranged on the soft clamping jaw shifting device, the soft clamping jaw shifting device controls the plurality of soft clamping jaws to mutually match with one another to manually clamp or automatically clamp the semi-insulating SiC crystal ingot on the chuck body through centripetal motion close to the positioning shaft, controls the plurality of soft clamping jaws to manually clamp or automatically clamp the semi-insulating SiC crystal ingot on the chuck body through centrifugal motion far away from the positioning shaft,
when the SiC crystal ingot is round, the water guide laser head is perpendicular to the rotating plane of the rotating device or parallel to the rotating plane along the tangential direction of the round-rolling track, the semi-insulating SiC crystal ingot on the chuck body is manually or automatically clamped, the first servo motor drives the pinion, the pinion drives the large gear to rotate, the mounting seat above the large gear is connected with the crystal ingot seed part clamp to complete power transmission and speed reduction, thereby driving the crystal ingot seed part clamp to rotate, driving the SiC crystal ingot to do circular motion so that the round-rolling track of the SiC crystal ingot is located in the core area of the cutting working area of the water guide laser head, and automatically adjusting according to the depth of a preset notch so that the cutting position of the SiC crystal ingot is always located in the core area of the water guide laser head cutting working area, and the round-rolling process of the SiC crystal ingot is completed.
2. The water jet laser rounding system of claim 1, wherein the tightening and loosening means comprises: a manual tightening and loosening device composed of a chassis, a spiral groove, a spiral disc, a claw matching block and a manual pinion and an automatic tightening device composed of the chassis, the spiral groove, the spiral disc, the claw matching block, a planetary gear, a sun gear and an outer wheel,
in the manual tightening and loosening device, the spiral disc is positioned on the chassis, a spiral groove is formed in the spiral disc, a guide piece is arranged below the jaw matching block, a bayonet matched and clamped with the jaw is arranged above the jaw matching block, the guide piece of the jaw matching block is positioned in the spiral groove, the manual pinion is positioned below the spiral disc and meshed with the spiral disc, the manual pinion is manually rotated to drive the spiral disc to rotate, and the spiral disc drives the jaw matching block and the jaw to centripetally move close to the positioning shaft so as to manually clamp a semi-insulating SiC ingot positioned on the chuck body or to centrifugally move away from the positioning shaft so as to manually loosen the semi-insulating SiC ingot positioned on the chuck body;
in the automatic clamping and loosening device, the spiral disc is fixed with the outer wheel, the outer wheel is located inside the chassis, the outer wheel is in inner engagement with the planetary gear, the sun gear is in outer engagement with the planetary gear, the center of the sun gear is fixedly connected with the second servo motor, the spiral disc is provided with a spiral groove, a guide piece is arranged below the claw matching block, a bayonet matched and clamped with the claw is arranged above the claw matching block, the guide piece of the claw matching block is located in the spiral groove, the second servo motor automatically rotates to drive the sun gear to rotate, the sun gear drives the spiral disc fixedly connected with the outer wheel to rotate through the rotation of the planetary gear, and the spiral disc drives the claw matching block and the claw to move centripetally close to the positioning shaft so as to automatically clamp a semi-insulating SiC ingot located on the chuck body or separate from the positioning shaft to perform centrifugal movement, so that the semi-insulating SiC ingot located on the chuck body is automatically loosened.
3. The water jet laser rounding system of claim 2, wherein the guide is shaped as teeth, the guide engaging the helical groove.
4. The water jet laser rounding system of claim 1, wherein the water guide laser head precisely moves in the direction of X, Y, Z three axes according to the rounding size of the SiC ingot, the water guide laser head is fixed on the XY plane during rounding, the rotating device drives the SiC ingot to do circular motion so that the rounding track of the SiC ingot is located in the core area of the cutting working area of the water guide laser head, and on the Z plane, the water guide laser head cooperates with the transmission shaft according to the cutting depth, and the rotating device is controlled to drive the SiC ingot to move on the Z plane so as to control the cutting depth of the SiC ingot.
5. The water jet laser rounding system of claim 1 wherein the water guide laser head is movable within the section of the SiC ingot rounding track during the rounding process of the water guide laser head along the tangential direction of the SiC ingot rounding track parallel to the rotation plane of the rotation means, the rotation means driving the SiC ingot to move circumferentially so that the SiC ingot rounding track is located in the core area of the water guide laser head cutting work area to effect rounding.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101406988A (en) * | 2007-10-12 | 2009-04-15 | 深圳市大族激光科技股份有限公司 | Laser cyclotomic apparatus and method thereof |
| CN207222982U (en) * | 2017-09-01 | 2018-04-13 | 青岛力磁电气股份有限公司 | General car magnetic suction disc and self-centering general car magnetic suction disc |
| CN113649706A (en) * | 2021-07-07 | 2021-11-16 | 西安电子科技大学芜湖研究院 | SiC wafer efficient chamfering method based on water jet laser |
-
2021
- 2021-11-24 CN CN202111407816.2A patent/CN116765594A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101406988A (en) * | 2007-10-12 | 2009-04-15 | 深圳市大族激光科技股份有限公司 | Laser cyclotomic apparatus and method thereof |
| CN207222982U (en) * | 2017-09-01 | 2018-04-13 | 青岛力磁电气股份有限公司 | General car magnetic suction disc and self-centering general car magnetic suction disc |
| CN113649706A (en) * | 2021-07-07 | 2021-11-16 | 西安电子科技大学芜湖研究院 | SiC wafer efficient chamfering method based on water jet laser |
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