CN114242886B - Method and device for regulating and controlling two-dimensional ferromagnetic/antiferromagnetic heterojunction exchange bias - Google Patents
Method and device for regulating and controlling two-dimensional ferromagnetic/antiferromagnetic heterojunction exchange bias Download PDFInfo
- Publication number
- CN114242886B CN114242886B CN202111450173.XA CN202111450173A CN114242886B CN 114242886 B CN114242886 B CN 114242886B CN 202111450173 A CN202111450173 A CN 202111450173A CN 114242886 B CN114242886 B CN 114242886B
- Authority
- CN
- China
- Prior art keywords
- heterojunction
- laser
- sample
- antiferromagnetic
- dimensional
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000005290 antiferromagnetic effect Effects 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims abstract description 24
- 230000005294 ferromagnetic effect Effects 0.000 title claims abstract description 23
- 230000001276 controlling effect Effects 0.000 title claims abstract description 18
- 230000001105 regulatory effect Effects 0.000 title claims abstract description 10
- 239000010410 layer Substances 0.000 claims abstract description 29
- 239000003302 ferromagnetic material Substances 0.000 claims abstract description 22
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 19
- 239000011858 nanopowder Substances 0.000 claims abstract description 19
- 239000002356 single layer Substances 0.000 claims abstract description 19
- 239000002885 antiferromagnetic material Substances 0.000 claims abstract description 17
- 230000000694 effects Effects 0.000 claims abstract description 15
- 239000011229 interlayer Substances 0.000 claims abstract description 12
- 230000008569 process Effects 0.000 claims abstract description 7
- 229910005916 GeTe2 Inorganic materials 0.000 claims description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 16
- 239000011888 foil Substances 0.000 claims description 16
- 238000006073 displacement reaction Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 230000005291 magnetic effect Effects 0.000 abstract description 11
- 230000035939 shock Effects 0.000 abstract description 4
- 230000003993 interaction Effects 0.000 abstract description 3
- 239000004205 dimethyl polysiloxane Substances 0.000 description 14
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 14
- 239000000758 substrate Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- 238000012546 transfer Methods 0.000 description 9
- 239000011521 glass Substances 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 5
- 239000002390 adhesive tape Substances 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- -1 Polydimethylsiloxane Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000005030 aluminium foil Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000000089 atomic force micrograph Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Thin Magnetic Films (AREA)
Abstract
The invention discloses a method and a device for regulating and controlling two-dimensional ferromagnetic/antiferromagnetic heterojunction exchange bias, and belongs to the technical field of spintronics. The lower layer of the heterojunction is a two-dimensional ferromagnetic material, the lower layer is a two-dimensional antiferromagnetic material, and the method comprises the following steps: a single-layer graphene nano powder is arranged on the front surface of a two-dimensional ferromagnetic/antiferromagnetic heterojunction sample; and (3) focusing laser emitted by a laser on a plane where the monolayer graphene nano powder is located, controlling movement of a sample, applying out-of-plane pressure to the sample by the laser in the moving process, and adjusting the interlayer spacing of the heterojunction by changing the laser power, so as to realize the regulation and control of the exchange bias effect. The invention is based on that interlayer interaction is strongly influenced by interlayer spacing of a van der Waals antiferromagnetic/ferromagnetic system, and utilizes a laser shock peening process to control interlayer spacing of a van der Waals heterostructure, so that exchange bias effect in the van der Waals magnetic heterojunction is continuously adjustable, and controllability of the effect is improved.
Description
Technical Field
The invention belongs to the technical field of spintronics, and particularly relates to a method and a device for regulating and controlling two-dimensional ferromagnetic/antiferromagnetic heterojunction exchange bias.
Background
The exchange bias effect is an exchange coupling phenomenon existing at the interface of antiferromagnetic and ferromagnetic double-layer materials, and is specifically expressed in that the magnetic moment of the ferromagnetic material is unidirectionally pinned by the magnetic moment of the adjacent antiferromagnetic, and the hysteresis loop is offset along the magnetic field axis. Proper design of the exchange bias effect of the ferromagnetic/antiferromagnetic system allows for a preferred magnetization direction and higher switching field in the magnetic device compared to a ferromagnetic without such unidirectional pinning. Therefore, this effect has been widely used in spintronics, and is a core part of various magnetic devices and magnetic sensors such as giant magnetoresistance devices, magnetic sensors, hard disk drives, and the like.
2D van der waals magnetic materials provide an ideal platform for studying low-dimensional magnetism due to their atomically thin dimensions and excellent tunability. If the antiferromagnetic/ferromagnetic system is replaced by a 2D van der waals magnetic material heterojunction that can exhibit an exchange bias system, it is possible to facilitate the device approaching an atomically thin size and more flexibility, which has great potential for improving magnetic storage density. Optimizing the exchange bias effect for a particular application is important, and has been accomplished in conventional work by various strategies including adjusting the thickness of the magnetic material layer and the non-magnetic doping, however, this requires enough samples to obtain the system results, and cannot be continuously adjusted for use as external control parameters.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a method and a device for regulating and controlling the exchange bias of a two-dimensional ferromagnetic/antiferromagnetic heterojunction, which aim to solve the problems that the blocking temperature is low, the exchange bias field is small and the exchange bias field cannot be effectively optimized.
In order to achieve the above object, in one aspect, the present invention provides a method for adjusting and controlling exchange bias of a two-dimensional ferromagnetic/antiferromagnetic heterojunction, wherein a lower layer of the heterojunction is made of a two-dimensional ferromagnetic material, and a lower layer of the heterojunction is made of a two-dimensional antiferromagnetic material, and the method comprises the following steps:
a single-layer graphene nano powder is arranged on the front surface of a two-dimensional ferromagnetic/antiferromagnetic heterojunction sample;
And (3) focusing laser emitted by a laser on a plane where the monolayer graphene nano powder is located, controlling movement of a sample, applying out-of-plane pressure to the sample by the laser in the moving process, and adjusting the interlayer spacing of the heterojunction by changing the laser power, so as to realize the regulation and control of the exchange bias effect.
Preferably, taking a 2D van der waals/antiferromagnetic heterojunction as an example, the structure of the heterojunction is: the lower layer is made of ferromagnetic material, and the upper layer is made of antiferromagnetic material.
Preferably, 2D Fe 3GeTe2 is chosen as the ferromagnetic material, which has metallic properties and a higher curie temperature, and 2D FePSe 3 is chosen as the antiferromagnetic material, which has a higher neel temperature.
Preferably, the diameter of the single-layer graphene nano powder is 0.5-5 μm, and the purity is more than 99%.
Preferably, the sample movement range is 2.5cm lateral movement distance and 3cm longitudinal movement distance.
Preferably, an aluminum foil is further arranged between the front surface of the sample and the monolayer graphene nano powder.
Preferably, the aluminum foil has a thickness of 10 μm.
Preferably, the laser is a femtosecond pulse Nd-YAG laser, the pulse width is 10ps, the laser wavelength is 1064nm, and the spot diameter at the focus is 4mm.
Wherein the preparation of the heterojunction comprises the following steps:
Step 1: a thin layer of 2D van der waals ferromagnetic material Fe 3GeTe2 and antiferromagnetic material FePSe 3 were obtained on the tape using a mechanical stripping method.
Step 2. The ferromagnetic material Fe 3GeTe2 and the antiferromagnetic material FePSe 3 peeled off the tape in step 1 were transferred to the same two pieces of Polydimethylsiloxane (PDMS) and attached to the glass slide.
And 3, compacting the PDMS containing the ferromagnetic material Fe 3GeTe2 thin layer material obtained in the step 2 onto a substrate.
And 4, placing the substrate containing the ferromagnetic material Fe 3GeTe2 thin layer material obtained in the step 3 under an optical microscope to find out the required ferromagnetic material Fe 3GeTe2 thin layer material.
Step 5. The PDMS containing the thin layer of antiferromagnetic material FePSe 3 obtained in step 2 was placed under an optical microscope to find the desired thin layer of antiferromagnetic material FePSe 3.
And 6, placing the substrate obtained in the step 4 on a stage in a transfer platform, clamping a slide glass attached with the PDMS obtained in the step 5 on a moving frame, and pressing the slide glass to a target position on a target substrate by moving the position of the slide glass.
Step 7. The stage in the transfer stage is heated to 60 ℃ and the PDMS attached to the substrate is slowly lifted, at which time the antiferromagnetic material FePSe 3 is successfully transferred and stacked onto the ferromagnetic material Fe 3GeTe2.
Preferably, schiff s Gao Jiaodai is selected as the van der waals material stripping tool.
Preferably, PDMS is selected as the transfer medium in step 2, and has a thickness of 500 μm and an area of 1cm 2.
Preferably, the substrate selected in step 3 is a silicon substrate (SiO 2/Si) with a surface polished with 500nm thickness silicon dioxide.
Preferably, the thickness of the selected ferromagnetic material Fe 3GeTe2 is in the range 18.0nm to 26.9nm. Further preferred thicknesses are 18.0nm and 24.0nm. The area is larger than 200 mu m 2.
Preferably, the ferromagnetic material FePSe 3 is selected to have a thickness of 27.0nm and 24.4nm. The area is larger than 100 mu m 2.
Preferably, in step 6, the transfer apparatus uses a transfer platform provided by a michaelv photoelectric device as a transfer tool.
Preferably, in the above-performed steps, the experimental environment is selected from a glove box containing an inert gas of argon.
The invention further provides a device for regulating and controlling the two-dimensional ferromagnetic/antiferromagnetic heterojunction exchange bias, which comprises a laser and a displacement module, wherein the displacement module is used for bearing a two-dimensional ferromagnetic/antiferromagnetic heterojunction sample and controlling the movement of the sample; the laser is used for emitting laser to focus on the sample, and the layer spacing of the heterojunction is adjusted by changing the laser power, so that the exchange bias effect is regulated and controlled.
Preferably, the front surface of the sample is covered with an aluminum foil, and the aluminum foil is smeared with single-layer graphene nano powder.
Compared with the prior art, the exchange bias effect in the van der Waals magnetic heterojunction is continuously adjustable by controlling the interlayer spacing of the van der Waals heterostructure by utilizing a laser shock peening process based on the interlayer spacing of the van der Waals antiferromagnetic/ferromagnetic system to strongly influence the interlayer interaction, so that the controllability of the exchange bias effect is improved, and the adjustment and optimization of the exchange bias effect are realized. The laser shock peening process has the advantages of quick action time, large-area operation, no damage to samples and the like, and can continuously adjust the interaction between the 2D van der Waals ferromagnet/antiferromagnetic heterojunction layers and serve as external control parameters, so that the regulation and optimization of the exchange bias effect shown by the 2D van der Waals ferromagnet/antiferromagnetic heterojunction can be realized.
Drawings
Fig. 1 is an atomic force microscope image of a 2D van der waals ferromagnetic material Fe 3GeTe2 and an antiferromagnetic material FePSe 3 thin layer material stacked to form a heterojunction, (a) a mirror image of the prepared heterojunction, and (b) a test of the prepared heterojunction.
Fig. 2 is a graph of hysteresis loops at different temperatures for the heterojunction test prepared in fig. 1.
Fig. 3 is a schematic diagram of an apparatus for performing a laser shock peening process on a prepared heterojunction.
Fig. 4 is a graph comparing hysteresis loops of the sample of fig. 1 at 5K with no laser applied and an average power of 5W applied.
Fig. 5 shows the temperature-dependent characteristics of the hysteresis loop of the sample of fig. 1, which were measured with the application of laser light of different powers, (a) the temperature dependence of the hysteresis loop measured without the application of laser light, (b) the temperature dependence of the hysteresis loop with the application of laser light of 5W, (c) the temperature dependence of the hysteresis loop with the application of laser light of 8W, and (d) the temperature dependence of the hysteresis loop with the application of laser light of 13W.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention. In addition, the technical features of the embodiments of the present invention described below may be combined with each other as long as they do not interfere with each other.
Example 1
Step 1, respectively placing the blocky 2D van der Waals ferromagnetic material Fe 3GeTe2 and the antiferromagnetic material FePSe 3 on two prepared Sigao adhesive tapes, and respectively doubling back for 4 times for standby.
And 2, respectively pressing the stripped ferromagnetic material Fe 3GeTe2 and the stripped antiferromagnetic material FePSe 3 on the adhesive tape in the step 1 on two pieces of PDMS with the same area of 1 x 1cm 2 and the thickness of 500 mu m, and then lifting the adhesive tape, wherein the stripped materials are adhered on the PDMS. Finally, the two PDMS pieces are respectively stuck on the two clean glass slides.
And 3, compacting the PDMS containing the ferromagnetic material Fe 3GeTe2 thin layer material obtained in the step 2 onto the SiO 2/Si substrate, so that a large amount of Fe 3GeTe2 thin layer material is adhered to the substrate.
And 4, placing the substrate obtained in the step 3 under an optical microscope, finding a ferromagnetic material Fe 3GeTe2 thin layer material with the area larger than 15 x 25 mu m 2 and the color of which is blue (the thickness is estimated to be about 20 nm), and placing the ferromagnetic material Fe 3GeTe2 thin layer material in a sample box for standby.
Step 5. PDMS obtained in step 2, containing a thin layer of antiferromagnetic material FePSe 3, was placed under an optical microscope to find a thin layer of antiferromagnetic material FePSe 3 with an area greater than 15 x 15 μm 2 and a color-bias transparency (thickness of around 20nm is expected).
And 6, placing the substrate obtained in the step 4 on a central vacuum pump port of the objective table in the transfer platform, and turning on the objective table vacuum pump to fix the substrate on the objective table. The PDMS-attached slide obtained in step 5 was clamped on a moving rack, and the materials determined in steps 4 and 5 were found by moving the slide position using a microscope lens on a transfer stage. And (3) compacting the determined material on the PDMS to target positions on a target substrate.
Step 7. After heating the stage in the transfer platform to 60 ℃, the PDMS attached to the substrate is slowly lifted, at which time the antiferromagnetic material FePSe 3 is successfully transferred and stacked onto the ferromagnetic material Fe 3GeTe2, and the heterojunction is successfully prepared (as in fig. 1).
And 8, rapidly transferring the sample prepared in the step 7 into a test cavity, and testing hysteresis loops of the sample by utilizing a magneto-optical Kerr optical path, wherein the test temperature is 5K-200K, and one hysteresis loop is tested every 10K to obtain data (such as exchange bias fields, coercivity values, blocking temperatures and the like) at different temperatures (shown in figure 2).
Step 9. The sample is taken out of step 8, the sample is placed face up in the center of the slide and both are wrapped with 10 μm thick aluminum foil paper. A single-layer graphene nano powder with the thickness of 0.5mm is uniformly smeared on aluminum foil paper covered with the front surface of the sample, and then a new glass slide is covered. Two slides were clamped with clamps to secure the sample of the middle layer, aluminum foil, and monolayer graphene nanopowder (see fig. 3).
And 10, placing the sample prepared in the step 8 on a mobile station controlled by a stepping motor, and setting a program to be operated for controlling the in-plane moving speed and the in-plane range of the mobile station. The movement range of the mobile station was set to be 2.5cm in lateral movement and 3cm in longitudinal movement.
And 11, directly facing the femtosecond pulse laser to the mobile station in the step 10, turning on a switch of the laser, and setting the average power of the laser to be 5W. The pulse width was set to 10ps. And then determining the focal position of the laser by using photosensitive paper, and adjusting the vertical distance of the mobile station to the focal position of the laser.
And 12, running the moving program of the moving table set in the step 10, and taking down the sample after the program is finished, so that the out-of-plane pressure of the sample obtained in the step 7 is applied, and the interlayer spacing of the 2D van der Waals ferromagnetic/antiferromagnetic heterojunction is adjusted.
Step 13, repeating the step 8, and comparing the magneto-optical Kerr test of the sample obtained in the step 12 with the data measured in the step 8 (as shown in fig. 4).
Example 2
Step 1 for more visual comparison we take the sample from step 13 of example 1, place the sample face up in the centre of the slide and wrap both with 10 μm thick aluminium foil paper. A single-layer graphene nano powder with the thickness of 0.5mm is uniformly smeared on aluminum foil paper covered with the front surface of the sample, and then a new glass slide is covered. Two slides were clamped with clamps to secure the sample of the middle layer, aluminum foil, and monolayer graphene nano-powder.
And 2, placing the sample prepared in the step1 on a mobile station controlled by a stepping motor, and setting a program to be operated for controlling the in-plane moving speed and the in-plane range of the mobile station. The movement range of the mobile station was set to be 2.5cm in lateral movement and 3cm in longitudinal movement.
And 3, enabling the femtosecond pulse laser to face the mobile station in the step 2, opening a switch of the laser, and setting the average power of the laser to be 9W. The pulse width was set to 10ps. And then determining the focal position of the laser by using photosensitive paper, and adjusting the vertical distance of the mobile station to the focal position of the laser.
And 4, running the moving program of the moving table set in the step 2, and taking down the sample after the program is finished, so that the application of out-of-plane pressure of the obtained sample is obtained, and the interlayer spacing of the 2D van der Waals ferromagnetic/antiferromagnetic heterojunction is adjusted.
And 5, performing magneto-optical Kerr test on the sample obtained in the step 4, and analyzing the measured data.
Example 3
Step 1. For more visual comparison, samples were taken from step 4 of example 2, placed face up in the center of the slide and both wrapped with 10 μm thick aluminum foil. A single-layer graphene nano powder with the thickness of 0.5mm is uniformly smeared on aluminum foil paper covered with the front surface of the sample, and then a new glass slide is covered. Two slides were clamped with clamps to secure the sample of the middle layer, aluminum foil, and monolayer graphene nano-powder.
And 2, placing the sample prepared in the step1 on a mobile station controlled by a stepping motor, and setting a program to be operated for controlling the in-plane moving speed and the in-plane range of the mobile station. The movement range of the mobile station was set to be 2.5cm in lateral movement and 3cm in longitudinal movement.
And step 3, the femtosecond pulse laser is opposite to the mobile station in the step2, a switch of the laser is turned on, and the average power of the laser is set to 13W. The pulse width was set to 10ps. And then determining the focal position of the laser by using photosensitive paper, and adjusting the vertical distance of the mobile station to the focal position of the laser.
And 4, running the moving program of the moving table set in the step 2, and taking down the sample after the program is finished, so that the application of out-of-plane pressure of the obtained sample is obtained, and the interlayer spacing of the 2D van der Waals ferromagnetic/antiferromagnetic heterojunction is adjusted.
And 5, performing magneto-optical Kerr test on the sample obtained in the step 4, and analyzing the measured data.
After the above examples were carried out, the data obtained in step 8 of example 1, step 13 of example 1, step 5 of example 2, and step 5 of example 3 were analyzed and compared as shown in fig. 5.
It will be readily appreciated by those skilled in the art that the foregoing description is merely a preferred embodiment of the invention and is not intended to limit the invention, but any modifications, equivalents, improvements or alternatives falling within the spirit and principles of the invention are intended to be included within the scope of the invention.
Claims (8)
1. A method for regulating and controlling exchange bias of a two-dimensional ferromagnetic/antiferromagnetic heterojunction is characterized in that the lower layer of the heterojunction is made of a two-dimensional ferromagnetic material, and the upper layer of the heterojunction is made of a two-dimensional antiferromagnetic material, and the method comprises the following steps:
a single-layer graphene nano powder is arranged on the front surface of a two-dimensional ferromagnetic/antiferromagnetic heterojunction sample;
And (3) focusing laser emitted by a laser on a plane where the monolayer graphene nano powder is located, controlling movement of a sample, applying out-of-plane pressure to the sample by the laser in the moving process, and adjusting the interlayer spacing of the heterojunction by changing the laser power, so as to realize the regulation and control of the exchange bias effect.
2. The method of claim 1, wherein the monolayer graphene nano-powder has a diameter of 0.5-5 μm and a purity of greater than 99%.
3. The method of claim 1, wherein the sample is moved a distance of 2.5cm in the lateral direction and 3cm in the longitudinal direction.
4. The method of claim 1, wherein an aluminum foil is further disposed between the sample front side and the monolayer graphene nanopowder.
5. The method according to claim 1, wherein the aluminum foil has a thickness of 10 μm.
6. The method of claim 1, wherein the two-dimensional ferromagnetic material is 2D Fe 3GeTe2 and the two-dimensional antiferromagnetic material is 2D FePSe 3.
7. The method of claim 1 wherein the laser is a femtosecond pulsed Nd: YAG laser with a pulse width of 10ps, a laser wavelength of 1064nm, and a spot diameter at the focal point of 4mm.
8. The device for regulating and controlling the two-dimensional ferromagnetic/antiferromagnetic heterojunction exchange bias is characterized by comprising a laser and a displacement module, wherein the displacement module is used for bearing a two-dimensional ferromagnetic/antiferromagnetic heterojunction sample and controlling the movement of the sample; covering the front surface of the sample with aluminum foil, and coating single-layer graphene nano powder on the aluminum foil; the laser is used for emitting laser to focus on the plane where the single-layer graphene nano powder is located, and the layer spacing of the heterojunction is adjusted by changing the laser power, so that the exchange bias effect is regulated and controlled.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111450173.XA CN114242886B (en) | 2021-11-30 | 2021-11-30 | Method and device for regulating and controlling two-dimensional ferromagnetic/antiferromagnetic heterojunction exchange bias |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111450173.XA CN114242886B (en) | 2021-11-30 | 2021-11-30 | Method and device for regulating and controlling two-dimensional ferromagnetic/antiferromagnetic heterojunction exchange bias |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114242886A CN114242886A (en) | 2022-03-25 |
| CN114242886B true CN114242886B (en) | 2024-05-14 |
Family
ID=80752456
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111450173.XA Active CN114242886B (en) | 2021-11-30 | 2021-11-30 | Method and device for regulating and controlling two-dimensional ferromagnetic/antiferromagnetic heterojunction exchange bias |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114242886B (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102832336A (en) * | 2012-08-28 | 2012-12-19 | 淮阴工学院 | Method for improving exchange bias field heat stability of ferromagnetic/antiferromagnetic dual-layer membrane by laser annealing |
| CN105609630A (en) * | 2016-02-01 | 2016-05-25 | 唐山市众基钢结构有限公司 | Ferromagnetic-antiferromagnetic thin film heterojunction structure, fabrication method thereof and magnetic storage device |
| CN105633111A (en) * | 2016-03-08 | 2016-06-01 | 华中科技大学 | Electrical field assisted writing magnetic tunnel junction unit and writing method thereof |
| CN107305923A (en) * | 2016-04-19 | 2017-10-31 | 赖志煌 | Spin orbit torsion type magnetic random access memory with thermal stability |
| CN111312893A (en) * | 2020-02-26 | 2020-06-19 | 南方科技大学 | Heterojunction material and preparation method and application thereof |
| CN111312593A (en) * | 2019-11-15 | 2020-06-19 | 杭州电子科技大学 | Method for regulating bright and dark excitons of two-dimensional transition metal chalcogenide |
| CN111740011A (en) * | 2020-06-24 | 2020-10-02 | 中国科学院微电子研究所 | Spin orbit torque magnetic random access memory unit, memory array and memory |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11183227B1 (en) * | 2020-04-29 | 2021-11-23 | Regents Of The University Of Minnesota | Electric field switchable magnetic devices |
-
2021
- 2021-11-30 CN CN202111450173.XA patent/CN114242886B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102832336A (en) * | 2012-08-28 | 2012-12-19 | 淮阴工学院 | Method for improving exchange bias field heat stability of ferromagnetic/antiferromagnetic dual-layer membrane by laser annealing |
| CN105609630A (en) * | 2016-02-01 | 2016-05-25 | 唐山市众基钢结构有限公司 | Ferromagnetic-antiferromagnetic thin film heterojunction structure, fabrication method thereof and magnetic storage device |
| CN105633111A (en) * | 2016-03-08 | 2016-06-01 | 华中科技大学 | Electrical field assisted writing magnetic tunnel junction unit and writing method thereof |
| CN107305923A (en) * | 2016-04-19 | 2017-10-31 | 赖志煌 | Spin orbit torsion type magnetic random access memory with thermal stability |
| CN111312593A (en) * | 2019-11-15 | 2020-06-19 | 杭州电子科技大学 | Method for regulating bright and dark excitons of two-dimensional transition metal chalcogenide |
| CN111312893A (en) * | 2020-02-26 | 2020-06-19 | 南方科技大学 | Heterojunction material and preparation method and application thereof |
| CN111740011A (en) * | 2020-06-24 | 2020-10-02 | 中国科学院微电子研究所 | Spin orbit torque magnetic random access memory unit, memory array and memory |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114242886A (en) | 2022-03-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA2318350C (en) | Magnetic engraving method, in particular for magnetic or magneto-optical recording | |
| US6773764B2 (en) | Method of forming a patterned magnetic recording medium | |
| CN101935014B (en) | Method for preparing nano-lattice based on linear controllability of laser direct writing metal film | |
| CN104900802A (en) | Fast thermal treatment method and device for pinning layer of spin electronic device | |
| CN114242886B (en) | Method and device for regulating and controlling two-dimensional ferromagnetic/antiferromagnetic heterojunction exchange bias | |
| USRE42824E1 (en) | Magneto-optical recording medium having a plurality of ferromagnetic thin layers | |
| Pasquet et al. | Patterned ferrimagnetic thin films of spinel ferrites obtained directly by laser irradiation | |
| Rickart et al. | Exchange bias in ordered antiferromagnets by rapid thermal anneal without magnetic field | |
| Tiberto et al. | Arrays of ordered nanostructures in Fe-Pt thin films by self-assembling of polystyrene nanospheres | |
| US8064297B2 (en) | Electromagnetic field generating element, information recording and reproduction head, and information recording and reproduction device | |
| JP2006012249A (en) | Heat assist magnetic recording device using near-field light | |
| US7352658B2 (en) | Method for recording information data to a recording medium by irradiation with a light beam and application of a magnetic field | |
| Yin et al. | High coercivity Co-ferrite thin films on SiO/sub 2/(100) substrate prepared by sputtering and PLD | |
| CN114156403A (en) | Two-dimensional van der waals homogeneous structure with adjustable exchange bias and preparation method thereof | |
| KR102117021B1 (en) | giant magnetoresistance device | |
| Nakano et al. | Preparation of Nd–Fe–B films via a low-temperature process | |
| Yang et al. | Ferromagnetic quantum dots formed by external laser irradiation | |
| CN111009365A (en) | Method for regulating and controlling magnetic moment arrangement of antiferromagnetic thin film material | |
| CN102838081B (en) | Method for preparing magnetic sensitive microstructure unit by femtosecond laser non-mask method | |
| CN204680696U (en) | For the rapid thermal process apparatus of spin electric device pinning layer | |
| Camelio et al. | Sub-Wavelength Arrays of Metallic Nanoparticles for Polarization-Selective Broad-Band Absorbers | |
| CN117396059A (en) | Device for regulating and controlling two-dimensional ferromagnetic/antiferromagnetic heterojunction exchange bias effect and preparation method thereof | |
| JP5776119B2 (en) | Magnetic recording medium and method for manufacturing the same | |
| EP3828890A1 (en) | An antiferromagnetic bendable recording device | |
| Maki et al. | Influence of deposition angle on the magnetic properties of Sm–Fe–N films fabricated by aerosol deposition method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |