CN114242886A - Method and device for regulating and controlling two-dimensional ferromagnetic/antiferromagnetic heterojunction exchange bias - Google Patents
Method and device for regulating and controlling two-dimensional ferromagnetic/antiferromagnetic heterojunction exchange bias Download PDFInfo
- Publication number
- CN114242886A CN114242886A CN202111450173.XA CN202111450173A CN114242886A CN 114242886 A CN114242886 A CN 114242886A CN 202111450173 A CN202111450173 A CN 202111450173A CN 114242886 A CN114242886 A CN 114242886A
- Authority
- CN
- China
- Prior art keywords
- laser
- heterojunction
- sample
- antiferromagnetic
- dimensional
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005294 ferromagnetic effect Effects 0.000 title claims abstract description 26
- 230000005290 antiferromagnetic effect Effects 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 title claims abstract description 24
- 230000001276 controlling effect Effects 0.000 title claims abstract description 18
- 230000001105 regulatory effect Effects 0.000 title claims abstract description 10
- 239000010410 layer Substances 0.000 claims abstract description 30
- 239000003302 ferromagnetic material Substances 0.000 claims abstract description 21
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000002885 antiferromagnetic material Substances 0.000 claims abstract description 18
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 18
- 239000011858 nanopowder Substances 0.000 claims abstract description 18
- 239000002356 single layer Substances 0.000 claims abstract description 18
- 230000000694 effects Effects 0.000 claims abstract description 16
- 239000011229 interlayer Substances 0.000 claims abstract description 10
- 230000008569 process Effects 0.000 claims abstract description 7
- 229910005916 GeTe2 Inorganic materials 0.000 claims description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 16
- 239000011888 foil Substances 0.000 claims description 16
- 238000006073 displacement reaction Methods 0.000 claims description 4
- 230000005291 magnetic effect Effects 0.000 abstract description 13
- 230000035939 shock Effects 0.000 abstract description 4
- 230000003993 interaction Effects 0.000 abstract description 3
- 238000005728 strengthening Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 16
- 239000004205 dimethyl polysiloxane Substances 0.000 description 15
- 239000000758 substrate Substances 0.000 description 14
- 239000011521 glass Substances 0.000 description 13
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 10
- 238000012360 testing method Methods 0.000 description 9
- 238000012546 transfer Methods 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 5
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 5
- 239000002390 adhesive tape Substances 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- -1 Polydimethylsiloxane Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000000089 atomic force micrograph Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Thin Magnetic Films (AREA)
Abstract
The invention discloses a method and a device for regulating and controlling two-dimensional ferromagnetic/antiferromagnetic heterojunction exchange bias, and belongs to the technical field of spintronics. The lower layer of the heterojunction is a two-dimensional ferromagnetic material, and the lower layer is a two-dimensional antiferromagnetic material, and the method comprises the following steps: arranging single-layer graphene nano powder on the front surface of a two-dimensional ferromagnetic/antiferromagnetic heterojunction sample; and focusing laser emitted by a laser on a plane where the single-layer graphene nano powder is located, controlling the sample to move, applying out-of-plane pressure to the sample by the laser in the moving process, and adjusting the interlayer spacing of the heterojunction by changing the power of the laser to realize the regulation and control of the exchange bias effect. The method is based on the fact that the layer spacing of the Van der Waals antiferromagnetic/ferromagnetic system strongly influences the interlayer interaction, utilizes the laser shock strengthening process to control the layer spacing of the Van der Waals heterostructure, continuously adjusts the exchange bias effect in the Van der Waals magnetic heterojunction, and improves the controllability of the effect.
Description
Technical Field
The invention belongs to the technical field of spintronics, and particularly relates to a method and a device for regulating and controlling two-dimensional ferromagnetic/antiferromagnetic heterojunction exchange bias.
Background
The exchange bias effect is an exchange coupling phenomenon existing in an interface of an antiferromagnetic material and a ferromagnetic double-layer material, and is particularly characterized in that the magnetic moment of the ferromagnetic material is unidirectionally pinned by the magnetic moment of an adjacent antiferromagnetic body, and a hysteresis loop is deviated along a magnetic field axis. By properly designing the exchange bias effect of the ferromagnetic/antiferromagnetic system, it is possible to achieve a preferred magnetization direction and a higher switching field in the magnetic device compared to a ferromagnetic without such unidirectional pinning. Therefore, the effect has a wide application in spintronics, and is a giant magnetoresistance device, a magnetic sensor, a hard disk drive and other magnetic devices and a core part of the magnetic sensor.
2D Van der Waals magnetic materials provide an ideal platform for studying low-dimensional magnetism due to their atomically thin dimensions and excellent tunability. If the antiferromagnetic/ferromagnetic system is replaced by a 2D van der waals magnetic material heterojunction capable of exhibiting an exchange bias system, it is possible to facilitate the approach of the device to atomically thin dimensions and to be more flexible, which has great potential for increasing magnetic storage density. It is important to optimize the exchange bias effect for a particular application, which has been achieved in conventional work by various strategies, including adjusting the thickness of the magnetic material layer and the non-magnetic doping, however, this requires enough sample to obtain the system results, and cannot be continuously adjusted and used as an external control parameter.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a method and a device for regulating and controlling the exchange bias of a two-dimensional ferromagnetic/antiferromagnetic heterojunction, and aims to solve the problems of low blocking temperature, small exchange bias field and incapability of being effectively optimized.
In order to achieve the above object, in one aspect, the present invention provides a method for adjusting and controlling exchange bias of a two-dimensional ferromagnetic/antiferromagnetic heterojunction, where a lower layer of the heterojunction is a two-dimensional ferromagnetic material and a lower layer is a two-dimensional antiferromagnetic material, the method including the steps of:
arranging single-layer graphene nano powder on the front surface of a two-dimensional ferromagnetic/antiferromagnetic heterojunction sample;
and focusing laser emitted by a laser on a plane where the single-layer graphene nano powder is located, controlling the sample to move, applying out-of-plane pressure to the sample by the laser in the moving process, and adjusting the interlayer spacing of the heterojunction by changing the power of the laser to realize the regulation and control of the exchange bias effect.
Preferably, taking 2D van der waals ferromagnetic/antiferromagnetic heterojunction as an example, the structure of the heterojunction is: the lower layer is made of ferromagnetic material, and the upper layer is made of antiferromagnetic material.
Preferably, 2D Fe is selected3GeTe2As ferromagnetic material with metallic properties and high Curie temperature, 2D FePSe is selected3As an antiferromagnetic material, it has a high neel temperature.
Preferably, the diameter of the single-layer graphene nano powder is 0.5-5 μm, and the purity is more than 99%.
Preferably, the sample moving range is 2.5cm in the transverse moving distance and 3cm in the longitudinal moving distance.
Preferably, an aluminum foil is further arranged between the front surface of the sample and the single-layer graphene nano powder.
Preferably, the aluminum foil is 10 μm thick.
Preferably, the laser is a femtosecond pulse Nd: YAG laser, the pulse width is 10ps, the laser wavelength is 1064nm, and the diameter of a light spot at a focus is 4 mm.
Wherein, the preparation of the heterojunction comprises the following steps:
step 1: obtaining 2D Van der Waals ferromagnetic material Fe on adhesive tape by using mechanical stripping method3GeTe2Thin layer of (2) and antiferromagnetic material FePSe3。
Step 3, the Fe containing ferromagnetic material obtained in the step 23GeTe2PDMS of a thin layer of material is compressed onto the substrate.
Step 4. Fe containing ferromagnetic material obtained in step 33GeTe2The substrate of the thin layer material is placed under an optical microscope to find the needed ferromagnetic material Fe3GeTe2A thin layer of material.
And 6, placing the substrate obtained in the step 4 on an object stage in a transfer platform, clamping the glass slide pasted with the PDMS obtained in the step 5 on a moving frame, and aligning and pressing the position of the glass slide to the target position on the target substrate.
Step 7, heating the objective table in the transfer platform to 60 ℃, slowly lifting the PDMS adhered to the substrate, and then, slowly lifting the antiferromagnetic material FePSe3Is successfully transferred and stacked to the ferromagnetic material Fe3GeTe2The above.
Preferably, Sichuan tape is selected as the van der Waals material release tool.
Preferably, PDMS is selected as the transfer medium in step 2, and has a thickness of 500 μm and an area of 1cm2。
Preferably, the substrate selected in step 3 is a silicon Substrate (SiO) with one polished surface and 500nm thickness of silicon dioxide2/Si)。
Preferably, the ferromagnetic material chosen is Fe3GeTe2The thickness of (A) is in the range of 18.0nm to 26.9 nm. Further preferably, the thickness is 18.0nm and 24.0 nm. The area is more than 200 mu m2。
Preferably, the ferromagnetic material chosen is FePSe3Is 27.0nm and 24.4 nm. Area greater than 100 μm2。
Preferably, in step 6, the transfer instrument selects a transfer platform provided by a mayta photoelectric device as a transfer tool.
Preferably, in the above-described steps, the experimental environment is selected in a glove box containing an inert gas such as argon.
The invention provides a device for regulating and controlling the exchange bias of a two-dimensional ferromagnetic/antiferromagnetic heterojunction, which comprises a laser and a displacement module, wherein the displacement module is used for bearing a two-dimensional ferromagnetic/antiferromagnetic heterojunction sample and controlling the movement of the sample; the laser is used for emitting laser to be focused on the sample, and the interlayer spacing of the heterojunction is adjusted by changing the power of the laser, so that the exchange bias effect is regulated and controlled.
Preferably, the front surface of the sample is covered with an aluminum foil, and a single layer of graphene nano powder is coated on the aluminum foil.
Compared with the prior art, the technical scheme provided by the invention has the advantages that in order to continuously adjust the exchange bias effect, the van der Waals antiferromagnetic/ferromagnetic system layer spacing strongly influences the interlayer interaction, the laser shock strengthening process is used for controlling the layer spacing of the van der Waals heterostructure, the exchange bias effect in the van der Waals magnetic heterojunction is continuously adjusted, the controllability of the effect is improved, and the regulation and optimization of the exchange bias effect are realized. The laser shock peening process has the advantages of short action time, large-area operation, no damage to samples and the like, can continuously adjust the interaction between the 2D van der Waals ferromagnetic/antiferromagnetic heterojunction layers and can be used as an external control parameter, thereby realizing the regulation and optimization of the exchange bias effect displayed by the 2D van der Waals ferromagnetic/antiferromagnetic heterojunction.
Drawings
FIG. 1 is a 2D van der Waals ferromagnetic material Fe3GeTe2And antiferromagnetic material FePSe3The heterojunction formed by stacking thin-layer materials, (a) is a light microscope image of the prepared heterojunction, and (b) is an atomic force microscope image of the prepared heterojunction test.
Fig. 2 is a hysteresis loop at different temperatures for the heterojunction test prepared in fig. 1.
Fig. 3 is a schematic view of an apparatus for performing a laser shock peening process on the prepared heterojunction.
FIG. 4 is a comparison of the hysteresis loops of the samples of FIG. 1 at 5K with no laser applied and with a laser applied at an average power of 5W.
FIG. 5 shows the temperature-dependent hysteresis loop characteristics of the sample of FIG. 1 measured with different applied laser powers, (a) the temperature dependence of the hysteresis loop measured without applied laser light, (b) the temperature dependence of the hysteresis loop measured with applied laser light of 5W, (c) the temperature dependence of the hysteresis loop measured with applied laser light of 8W, and (d) the temperature dependence of the hysteresis loop measured with applied laser light of 13W.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Example 1
Step 3, the Fe containing ferromagnetic material obtained in the step 23GeTe2PDMS of thin layer material is compacted to SiO2On a Si substrate so that a large amount of Fe adheres to the substrate3GeTe2A thin layer of material.
Step 4. the substrate obtained in step 3 was placed under an optical microscope and found to have an area greater than 15 x 25 μm2And Fe, a ferromagnetic material showing bluish color (with a thickness expected to be around 20 nm)3GeTe2Thin layer material, and placing in a sample box for standby.
And 6, placing the substrate obtained in the step 4 on a central vacuum pump port of an objective table in the transfer platform, and turning on a vacuum pump of the objective table to fix the substrate on the objective table. And (4) clamping the glass slide pasted with the PDMS obtained in the step (5) on the movable frame, and finding the material determined in the steps (4) and (5) by using a microscope lens on the transfer platform through the position of the movable glass slide. And aligning the determined material on the PDMS to a target position on a target substrate and compressing.
Step 7, after the objective table in the transfer platform is heated to 60 ℃, slowly lifting the PDMS adhered to the substrate, and then the antiferromagnetic material FePSe3Is successfully transferred and stacked to the ferromagnetic material Fe3GeTe2Above, the heterojunction was successfully prepared (see fig. 1).
And 8, quickly moving the sample prepared in the step 7 into a testing cavity, testing a magnetic hysteresis loop of the sample by using the magneto-optical Kerr optical path, testing the temperature range of 5K-200K, and testing one magnetic hysteresis loop every 10K to obtain data such as an exchange bias field, a coercive force value, blocking temperature and the like at different temperatures (as shown in figure 2).
And 9, taking out the sample from the step 8, placing the sample in the center of the glass slide with the front face facing upwards, and wrapping the sample and the glass slide by using 10-micron-thick aluminum foil paper. And (3) smearing single-layer graphene nano powder with the thickness of about 0.5mm uniformly on the aluminum foil paper covered with the front surface of the sample, and then covering a new glass slide. The middle layer of the sample, aluminum foil, and single layer graphene nanopowder were fixed by clamping the two slides with a clamp (see fig. 3).
And 10, placing the sample prepared in the step 8 on a moving table controlled by a stepping motor, and setting a program to be operated for controlling the in-plane moving speed and the in-plane range of the moving table. The moving range of the mobile station is set to be 2.5cm in transverse moving distance and 3cm in longitudinal moving distance.
And 11, facing the femtosecond pulse laser to the mobile station in the step 10, opening a switch of the laser, and setting the average power 5W of the laser. The pulse width was set to 10 ps. Then, the focal position of the laser is determined by using photosensitive paper, and the vertical distance of the mobile station is adjusted to the focal position of the laser.
And 12, operating the moving program of the moving platform set in the step 10, and after the program is finished, taking down the sample, namely applying the out-of-plane pressure to the sample obtained in the step 7, and adjusting the interlayer spacing of the 2D van der Waals ferromagnetic/antiferromagnetic heterojunction.
And 13, repeating the step 8, and performing magneto-optical Kerr test on the sample obtained in the step 12 to compare with the data measured in the step 8 (as shown in figure 4).
Example 2
And 2, placing the sample prepared in the step 1 on a moving table controlled by a stepping motor, and setting a program to be operated for controlling the in-plane moving speed and the in-plane range of the moving table. The moving range of the mobile station is set to be 2.5cm in transverse moving distance and 3cm in longitudinal moving distance.
And 3, aligning the femtosecond pulse laser to the mobile station in the step 2, opening a switch of the laser, and setting the average power 9W of the laser. The pulse width was set to 10 ps. Then, the focal position of the laser is determined by using photosensitive paper, and the vertical distance of the mobile station is adjusted to the focal position of the laser.
And 4, operating the moving program of the moving platform set in the step 2, and after the program is finished, taking down the sample to obtain the application of the out-of-plane pressure of the obtained sample, so that the interlayer spacing of the 2D van der Waals ferromagnetic/antiferromagnetic heterojunction is adjusted.
And 5, carrying out magneto-optical Kerr test on the sample obtained in the step 4, and analyzing the measured data.
Example 3
And 2, placing the sample prepared in the step 1 on a moving table controlled by a stepping motor, and setting a program to be operated for controlling the in-plane moving speed and the in-plane range of the moving table. The moving range of the mobile station is set to be 2.5cm in transverse moving distance and 3cm in longitudinal moving distance.
And 3, aligning the femtosecond pulse laser to the mobile station in the step 2, opening a switch of the laser, and setting the average power 13W of the laser. The pulse width was set to 10 ps. Then, the focal position of the laser is determined by using photosensitive paper, and the vertical distance of the mobile station is adjusted to the focal position of the laser.
And 4, operating the moving program of the moving platform set in the step 2, and after the program is finished, taking down the sample to obtain the application of the out-of-plane pressure of the obtained sample, so that the interlayer spacing of the 2D van der Waals ferromagnetic/antiferromagnetic heterojunction is adjusted.
And 5, carrying out magneto-optical Kerr test on the sample obtained in the step 4, and analyzing the measured data.
After the above examples were performed, the data obtained in step 8 of example 1, step 13 of example 1, step 5 of example 2, and step 5 of example 3 were analyzed and compared, as shown in fig. 5.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (9)
1. A method for regulating and controlling exchange bias of a two-dimensional ferromagnetic/antiferromagnetic heterojunction, wherein the lower layer of the heterojunction is made of a two-dimensional ferromagnetic material, and the upper layer of the heterojunction is made of a two-dimensional antiferromagnetic material, is characterized by comprising the following steps of:
arranging single-layer graphene nano powder on the front surface of a two-dimensional ferromagnetic/antiferromagnetic heterojunction sample;
and focusing laser emitted by a laser on a plane where the single-layer graphene nano powder is located, controlling the sample to move, applying out-of-plane pressure to the sample by the laser in the moving process, and adjusting the interlayer spacing of the heterojunction by changing the power of the laser to realize the regulation and control of the exchange bias effect.
2. The method of claim 1, wherein the single-layer graphene nanopowder has a diameter of 0.5-5 μ ι η and a purity greater than 99%.
3. The method of claim 1, wherein the sample movement range is a lateral movement distance of 2.5cm and a longitudinal movement distance of 3 cm.
4. The method of claim 1, wherein an aluminum foil is further disposed between the front surface of the sample and the single-layer graphene nanopowder.
5. The method of claim 1, wherein the aluminum foil is 10 μm thick.
6. The method of claim 1, wherein the two-dimensional ferromagnetic material is 2D Fe3GeTe2The two-dimensional antiferromagnetic material is 2D FePSe3。
7. The method of claim 1, wherein the laser is a femtosecond pulsed Nd: YAG laser with a pulse width of 10ps, a laser wavelength of 1064nm, and a spot diameter at the focal point of 4 mm.
8. A device for regulating and controlling two-dimensional ferromagnetic/antiferromagnetic heterojunction exchange bias is characterized by comprising a laser and a displacement module, wherein the displacement module is used for bearing a two-dimensional ferromagnetic/antiferromagnetic heterojunction sample and controlling the movement of the sample; the laser is used for emitting laser to be focused on the sample, and the interlayer spacing of the heterojunction is adjusted by changing the power of the laser, so that the exchange bias effect is regulated and controlled.
9. The apparatus of claim 8, wherein the front surface of the sample is covered with aluminum foil coated with a single layer of graphene nanopowder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111450173.XA CN114242886B (en) | 2021-11-30 | 2021-11-30 | Method and device for regulating and controlling two-dimensional ferromagnetic/antiferromagnetic heterojunction exchange bias |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111450173.XA CN114242886B (en) | 2021-11-30 | 2021-11-30 | Method and device for regulating and controlling two-dimensional ferromagnetic/antiferromagnetic heterojunction exchange bias |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114242886A true CN114242886A (en) | 2022-03-25 |
| CN114242886B CN114242886B (en) | 2024-05-14 |
Family
ID=80752456
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111450173.XA Active CN114242886B (en) | 2021-11-30 | 2021-11-30 | Method and device for regulating and controlling two-dimensional ferromagnetic/antiferromagnetic heterojunction exchange bias |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114242886B (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102832336A (en) * | 2012-08-28 | 2012-12-19 | 淮阴工学院 | Method for improving exchange bias field heat stability of ferromagnetic/antiferromagnetic dual-layer membrane by laser annealing |
| CN105609630A (en) * | 2016-02-01 | 2016-05-25 | 唐山市众基钢结构有限公司 | Ferromagnetic-antiferromagnetic thin film heterojunction structure, fabrication method thereof and magnetic storage device |
| CN105633111A (en) * | 2016-03-08 | 2016-06-01 | 华中科技大学 | Electrical field assisted writing magnetic tunnel junction unit and writing method thereof |
| CN107305923A (en) * | 2016-04-19 | 2017-10-31 | 赖志煌 | Spin orbit torsion type magnetic random access memory with thermal stability |
| CN111312893A (en) * | 2020-02-26 | 2020-06-19 | 南方科技大学 | Heterojunction material and preparation method and application thereof |
| CN111312593A (en) * | 2019-11-15 | 2020-06-19 | 杭州电子科技大学 | Method for regulating bright and dark excitons of two-dimensional transition metal chalcogenide |
| CN111740011A (en) * | 2020-06-24 | 2020-10-02 | 中国科学院微电子研究所 | Spin orbit torque magnetic random access memory unit, memory array and memory |
| US20210343321A1 (en) * | 2020-04-29 | 2021-11-04 | Regents Of The University Of Minnesota | Electric field switchable magnetic devices |
-
2021
- 2021-11-30 CN CN202111450173.XA patent/CN114242886B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102832336A (en) * | 2012-08-28 | 2012-12-19 | 淮阴工学院 | Method for improving exchange bias field heat stability of ferromagnetic/antiferromagnetic dual-layer membrane by laser annealing |
| CN105609630A (en) * | 2016-02-01 | 2016-05-25 | 唐山市众基钢结构有限公司 | Ferromagnetic-antiferromagnetic thin film heterojunction structure, fabrication method thereof and magnetic storage device |
| CN105633111A (en) * | 2016-03-08 | 2016-06-01 | 华中科技大学 | Electrical field assisted writing magnetic tunnel junction unit and writing method thereof |
| CN107305923A (en) * | 2016-04-19 | 2017-10-31 | 赖志煌 | Spin orbit torsion type magnetic random access memory with thermal stability |
| CN111312593A (en) * | 2019-11-15 | 2020-06-19 | 杭州电子科技大学 | Method for regulating bright and dark excitons of two-dimensional transition metal chalcogenide |
| CN111312893A (en) * | 2020-02-26 | 2020-06-19 | 南方科技大学 | Heterojunction material and preparation method and application thereof |
| US20210343321A1 (en) * | 2020-04-29 | 2021-11-04 | Regents Of The University Of Minnesota | Electric field switchable magnetic devices |
| CN111740011A (en) * | 2020-06-24 | 2020-10-02 | 中国科学院微电子研究所 | Spin orbit torque magnetic random access memory unit, memory array and memory |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114242886B (en) | 2024-05-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA2318350C (en) | Magnetic engraving method, in particular for magnetic or magneto-optical recording | |
| CN106711323A (en) | Magnetic heterostructure magnetic tunnel junction adopting two-dimensional material | |
| CN101935014B (en) | Method for preparing nano-lattice based on linear controllability of laser direct writing metal film | |
| CN103996404A (en) | Patterning of magnetic thin film using energized ions | |
| Pasquet et al. | Patterned ferrimagnetic thin films of spinel ferrites obtained directly by laser irradiation | |
| CN114242886B (en) | Method and device for regulating and controlling two-dimensional ferromagnetic/antiferromagnetic heterojunction exchange bias | |
| JP2012028067A (en) | Organic light emitting diode element, image display device, and illumination device | |
| US8023366B2 (en) | Near-field optical head and information recording apparatus | |
| CN107799650A (en) | A kind of ferroelectricity hetero-junctions and preparation method thereof and automatically controlled microwave electron component | |
| US8064297B2 (en) | Electromagnetic field generating element, information recording and reproduction head, and information recording and reproduction device | |
| Tiberto et al. | Arrays of ordered nanostructures in Fe-Pt thin films by self-assembling of polystyrene nanospheres | |
| CN101952707B (en) | Tip type probe manufacturing method, tip type probe, and tip type probe manufacturing apparatus | |
| US7352658B2 (en) | Method for recording information data to a recording medium by irradiation with a light beam and application of a magnetic field | |
| KR102117021B1 (en) | giant magnetoresistance device | |
| CN111092150B (en) | Organic spin valve device and preparation method and application thereof | |
| Nakano et al. | Preparation of Nd–Fe–B films via a low-temperature process | |
| Wei et al. | Direct writing-in and visualizing reading-out data storage with high capacity in low-cost plastics | |
| JP2002374020A (en) | Magnetoresistance effect device and manufacturing method therefor | |
| Yang et al. | Ferromagnetic quantum dots formed by external laser irradiation | |
| CN102838081B (en) | Method for preparing magnetic sensitive microstructure unit by femtosecond laser non-mask method | |
| Camelio et al. | Sub-Wavelength Arrays of Metallic Nanoparticles for Polarization-Selective Broad-Band Absorbers | |
| CN111115562B (en) | Method for in-situ processing of hollow nanometer cavity | |
| Maki et al. | Influence of deposition angle on the magnetic properties of Sm–Fe–N films fabricated by aerosol deposition method | |
| CN117396059A (en) | Device for regulating and controlling two-dimensional ferromagnetic/antiferromagnetic heterojunction exchange bias effect and preparation method thereof | |
| Zhang et al. | TiN‐Au/HfO2‐Au Multilayer Thin Films with Tunable Hyperbolic Optical Response |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |