CN105609630A - Ferromagnetic-antiferromagnetic thin film heterojunction structure, fabrication method thereof and magnetic storage device - Google Patents
Ferromagnetic-antiferromagnetic thin film heterojunction structure, fabrication method thereof and magnetic storage device Download PDFInfo
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Abstract
The invention aims to provide a ferromagnetic-antiferromagnetic thin film heterojunction structure, a fabrication method thereof and a magnetic storage device, relating to the technical field of magnetic storage. A ferromagnetic layer of the ferromagnetic-antiferromagnetic thin film heterojunction structure provided by the invention adopts all-Heusler alloy and has high and effective spin polarization and favorable half-metallic property, so that the ferromagnetic-antiferromagnetic thin film heterojunction structure has a high exchanger bias effect; an antiferromagnetic layer adopts a multi-ferroic material, the ferromagnetic-antiferromagnetic thin film heterojunction structure is endowed with various single ferroic characteristic and is also endowed with a coupling effect existing between a ferromagnetic sequence and a ferroelectric sequence, a magnetoelectric coupling effect is represented, thus, an exchange coupling effect at a ferromagnetic-antiferromagnetic interface is affected by changing the thickness of the antiferromagnetic layer, the magnetic change of the whole heterojunction structure can be acquired, and the exchange bias effect with an oscillation form is acquired. A magnetoelectric device based on the exchange bias effect can be applied to the magnetic storage fields of a magneto-resistor reading head, a magnetic sensor, a magnetic random access memory and the like.
Description
Technical field
The present invention relates to magnetic storage field, be specifically related to a kind of FM-AFM film heterojunction structure, preparation methodAnd magnetic storage apparatus.
Background technology
Since giant magnetoresistance (GMR) effect is found, various giant magnetoresistance devices are in electromechanics, automobile, boatEmpty space flight and high density data storage field have started extensive use. And FM-AFM duplicature system also becomes naturallyFor people's a study hotspot. In FM-AFM system outside magnetic field, from higher than antiferromagnetic Ne&1&el temperatureWhile being cooled to antiferromagnetic Ne&1&el temperature following (cold process on the spot) lower than the Curie temperature of ferromagnetic layer again, ferromagnetic layerHysteresis curve will be along magnetic direction deviation from origin, and is accompanied by coercitive increase, and this phenomenon is called exchange partiallyPut. The side-play amount of hysteresis curve is called as exchange bias field, is conventionally denoted as HE. The practical mistake of giant magnetoresistance deviceCheng Zhong, the exchange biased important function that risen of Ferromagnetic/Antiferromagnetic duplicature. FM-AFM duplicature is exchange biased to be carriedThe high sensitivity of high density magnetic recording playback head, makes magnetic recording storage density obtain development at full speed. In addition,The basic structure of the magnetic random memory (MRAM) that it is still widely paid close attention at present. In recent years, based on exchange biased effectThe magnetic electron device of answering is successfully applied to magnetoresistive read head, magnetic random memory, Magnetic Sensor equimagnetic and depositsStorage field.
But, along with technical development, more and more higher to the performance requirement of magnetic storage apparatus. Expect further to improve ironMagnetic-antiferromagnet film heterojunction structure, makes it have better performance.
Summary of the invention
In view of this, the invention provides a kind of FM-AFM film with good exchange bias effect heterogeneousStructure.
For reaching this object, the present invention by the following technical solutions:
A kind of FM-AFM film heterojunction structure, comprises inverse ferric magnetosphere and the ferromagnetic layer of stacked setting, described ironThe material of magnetosphere is that full Haas is strangled alloy;
The material of described inverse ferric magnetosphere is multi-ferroic material.
Preferably, to strangle alloy be Co to described full Haas2FeAl0.5Si0.5、Co2FeSi、Co2TiSn or
It is X that full Haas is strangled alloy2YGa, wherein, X is Co, Fe or Ni; Y is V, Cr, Mn or Cu.
Preferably, the thickness of described ferromagnetic layer is 1 to 10 nanometer, more preferably 5 nanometers.
Preferably, the material of described inverse ferric magnetosphere is BiFeO3、BiFe0.5Mn0.5O3Or YMnO3。
Preferably, also comprise substrate, described inverse ferric magnetosphere and described ferromagnetic layer are cascadingly set on described substrate.
Preferably, described substrate is strontium titanate monocrystal chip or niobium-doped strontium titanate monocrystal chip.
Preferably, also comprise protective layer, be arranged on described ferromagnetic layer.
Preferably, the material of described protective layer is Ta, Pt, Cu, AuRu.
Preferably, the thickness of described protective layer is 1 to 5 nanometer, more preferably 2 nanometers.
On the other hand, the present invention also provides the preparation of the simple FM-AFM film heterojunction of a kind of process structureMethod.
For reaching this object, the present invention by the following technical solutions:
A preparation method for FM-AFM film heterojunction structure described above, comprises the steps:
Steps A, on substrate, deposit multi-ferroic material with form inverse ferric magnetosphere;
Step B, steps A form inverse ferric magnetosphere on deposit full Haas strangle alloy with form ferromagnetic layer.
Preferably, in steps A, on substrate, deposit BiFeO3To form described inverse ferric magnetosphere;
Preferably, carry out deposition process in settling chamber, the vacuum of settling chamber is higher than 5 × 10-5Pa;
Preferably, oxygen pressure when deposition is 8～10Pa;
Preferably, depositing temperature is 700～750 DEG C, more preferably 720 DEG C;
Preferably, adopt original position pulse laser on substrate, to deposit BiFeO3, when deposition, laser energy be 200mJ～400mJ, frequency is 1～5Hz, more preferably 3Hz;
Preferably, anneal after completing deposition process, in annealing process, oxygen pressure is 1 × 104Pa, moves backThe fire time is 15～60 minutes, more preferably 30 minutes;
Preferably, after having annealed, remove the oxygen in settling chamber, be evacuated to vacuum higher than 5 × 10-5Pa,Then carry out step B.
Preferably, in step B, adopt original position pulse laser on inverse ferric magnetosphere, to deposit Co2FeAl0.5Si0.5;
Preferably, depositing temperature is 10～40 DEG C;
Preferably, laser energy when deposition is 200mJ～400mJ, and frequency is 1～5Hz, further preferredFor 3Hz.
Preferably, after step B completes, carry out step C: on the ferromagnetic layer forming at step B, form protective layer.
Preferably, Grown by Magnetron Sputtering protective layer on ferromagnetic layer;
Preferably, carry out sputter procedure in sputtering chamber, the vacuum of sputtering chamber is higher than 2 × 10-5Pa;
Preferably, sputter temperature is 10～40 DEG C;
Preferably, argon pressure when sputter is 0.2～1Pa, more preferably 0.5Pa.
On the one hand, the present invention also provides the magnetic storage apparatus that a kind of performance is good again.
For reaching this object, the present invention by the following technical solutions:
A kind of magnetic storage apparatus, described magnetic storage arranges and adopts FM-AFM film heterojunction structure as aboveAs magnetic storage medium.
The invention has the beneficial effects as follows:
The ferromagnetic layer of FM-AFM film heterojunction structure provided by the invention adopts full Haas to strangle alloy, has veryHigh effective spin polarizability, Half-metallic is good, makes FM-AFM film heterojunction structure have good exchangeBias effect, and inverse ferric magnetosphere adopts multi-ferroic material, not only possesses various single iron, also possesses ferromagneticThe coupling effect existing between order and ferroelectric order, shows magnetoelectric effect, therefore, and by changing inverse ferric magnetosphereVaried in thickness, affect the exchange-coupling interaction of FM-AFM interface, just can obtain whole heterojunction structureHeat treatment, obtain an exchange bias effect with oscillation form, based on the magnetic electronic of exchange bias effectDevice can be applicable to magnetoresistive read head, Magnetic Sensor, magnetic random memory equimagnetic field of storage.
Preparation method's process of FM-AFM film heterojunction structure provided by the invention is simple, easy operating.
Magnetic storage apparatus provided by the invention due to adopted above-mentioned ferromagnetic-meal ferromagnetic thin film heterojunction structure is as depositingStorage media, performance is good.
Brief description of the drawings
By the description to the embodiment of the present invention referring to accompanying drawing, above-mentioned and other object of the present invention, featureWith advantage will be more clear, in the accompanying drawings:
Fig. 1 is the structural representation of FM-AFM film heterojunction structure provided by the invention;
Fig. 2 is the ferroelectric hysteresis loop figure of anti-ferromagnetic layer material in the present invention.
Fig. 3 is the magnetic hysteresis of FM-AFM film heterojunction structure provided by the invention under different inverse ferric magnetosphere thicknessLoop line figure.
Fig. 4 is the graph of a relation of exchange biased and inverse ferric magnetosphere thickness of the present invention.
In figure, 1, substrate; 2, inverse ferric magnetosphere; 3, ferromagnetic layer; 4, protective layer.
Detailed description of the invention
Based on embodiment, present invention is described below, but the present invention is not restricted to these embodiment. ?In below details of the present invention being described, detailed some specific detail sections of having described. To those skilled in the artDo not have the description of these detail sections can understand the present invention completely yet. For fear of obscuring essence of the present invention,Known method, process, flow process, element do not describe in detail.
The invention provides a kind of FM-AFM film heterojunction structure, as shown in Figure 1, it comprises stacking gradually establishesSubstrate 1, inverse ferric magnetosphere 2, ferromagnetic layer 3 and the protective layer 4 put.
What wherein, inverse ferric magnetosphere 2 adopted is multi-ferroic material. Multi-ferroic material refers to the same middle bag mutually of materialContaining the key property of two kinds and two or more iron, it is a kind of current collection and magnetic multifunctional material. Many ironProperty material (as existing ferroelectricity has again ferromagnetic magnetic electric compound material etc.) not only possess various single iron (asFerroelectricity, ferromagnetism), also possess the coupling effect existing between ferromagnetic order and ferroelectric order, show that some are originalThe character that ferroelectric and ferromagnet do not have, as magnetoelectric effect (MEEffect), thereby makes multi-iron materialAt sensor, converter, memory device, information storage and the field such as read have broad application prospects. Preferably, adopt BiFeO3Form inverse ferric magnetosphere. Pure phase BiFeO3As the typical single phase multi-iron material of one, have and turn roundBent perovskite structure is one of minority material of at room temperature simultaneously having ferroelectric order and magnetic order, under room temperatureBe antiferromagnetic order (Ne&1&el temperature is 380 DEG C) and ferroelectric order (Curie temperature is 810 DEG C). In recent years withThe huge advance made of film preparing technology, greatly reduced BiFeO3Leakage conductance at room temperature, thus at room temperature seeMeasure more intense magnetoelectric effect, make this material attract a large amount of research sight.
Certainly, inverse ferric magnetosphere 2 is not limited to and adopts BiFeO3, other multi-ferroic materials also can, for example BiFe0.5Mn0.5O3、YMnO3Deng.
The thickness of inverse ferric magnetosphere 2 is preferably 20 to 120 nanometers.
Semi-metallic has special band structure, and a kind of spin energy band has conduction electron near Fermi surface,Show as metallicity; The fermi level of another kind of spin energy band, between conduction band and valence band, shows as partly and leadsBody or insulator. Therefore, semimetal is to have 100% spin polarizability in theory. As typical semimetal,The full Heusler alloy of Co base is except having high spinning polarizability, because also have high Curie temperature, low-resistanceBuddhist nun's factor and with advantages such as the good Lattice Matchings of MgO insulating barrier and become study hotspot now. In the present inventionThe material of ferromagnetic layer 3 adopt full Haas to strangle (Heusler) alloy, there is very high effective spin polarizability(Peff), further, preferably adopt Co2FeAl0.5Si0.5, in the middle of all semi-metallics, Co2FeAl0.5Si0.5At room temperature there is the highest effective spin polarizability (Peff), and Peff variation with temperature is minimum,Its extraordinary Half-metallic has been described.
Certainly, ferromagnetic layer 3 is not limited to and adopts Co2FeAl0.5Si0.5, other full Haas are strangled (Heusler) alloy materialAlso expect can for example Co2FeSi、Co2It is X that TiSn etc. or full Haas are strangled (Heusler) alloy2YGa, wherein,X is Co, Fe or Ni; Y is V, Cr, Mn or Cu.
The thickness of ferromagnetic layer 3 is preferably 1 to 10 nanometer, more preferably 5 nanometers.
Substrate 1 preferably adopts strontium titanate monocrystal chip or niobium-doped strontium titanate monocrystal chip.
The material of protective layer 4 is not limit, and can play the effect of guard electrode, can be for example Ta, Pt, Cu,AuRu etc. The thickness of protective layer 4 is preferably 1 to 5 nanometer, more preferably 2 nanometers.
The ferromagnetic layer of FM-AFM film heterojunction structure provided by the invention adopts full Haas to strangle (Heusler) and closesGold, has very high effective spin polarizability, and Half-metallic is good, and FM-AFM film heterojunction structure is hadWell exchange bias effect, and inverse ferric magnetosphere adopts multi-ferroic material, not only possesses various single iron, alsoPossess the coupling effect existing between ferromagnetic order and ferroelectric order, show magnetoelectric effect, therefore, by changingBecome the varied in thickness of inverse ferric magnetosphere, affect the exchange-coupling interaction of FM-AFM interface, just can obtain wholeThe heat treatment of individual heterojunction structure, obtains an exchange bias effect with oscillation form, based on exchange biased effectThe magnetic electron device of answering can be applicable to magnetoresistive read head, Magnetic Sensor, magnetic random memory equimagnetic field of storage.
In this heterojunction structure, the ferroelectric test result of inverse ferric magnetosphere as shown in Figure 2. Can observe inverse ferric magnetosphereBiFeO3Have good ferroelectric properties, its residual polarization value is 24 μ C/cm2, saturated polarization value is 38 μ C/cm2、Coercivity maximum is 600kV/cm. Fig. 3 is that prepared heterojunction structure obtains under different inverse ferric magnetosphere thicknessHysteresis curve datagram, when the thickness of inverse ferric magnetosphere changes from 20nm to 120nm, the exchange in hysteresis curveBiasing size has a change in oscillation, and this can very visual in image observing from Fig. 4. Fig. 4 is preparedThe graph of a relation of the exchange biased and antiferromagnetic thickness of heterojunction structure, as we can see from the figure, along with inverse ferric magnetosphere thicknessIncrease, the exchange biased change in oscillation that has one-period, the exchange bias effect institute based on this oscillation formThe magnetic electron device forming has very large potential using value on magnetic storage field.
FM-AFM film heterojunction structure provided by the invention can be used as storage medium and is widely used in magnetic storageIn equipment.
The present invention also provides the preparation method of above-mentioned FM-AFM film heterojunction structure. This preparation method comprise asLower step:
Steps A, on substrate, deposit multi-ferroic material with form inverse ferric magnetosphere.
On step B, the inverse ferric magnetosphere that forms in steps A, depositing full Haas, to strangle (Heusler) alloy ferromagnetic to formLayer.
Step C, step B form ferromagnetic layer on form protective layer.
Concrete, in steps A, on substrate, deposit BiFeO3To form inverse ferric magnetosphere.
In a preferred embodiment, carry out deposition process in settling chamber, the vacuum of settling chamber is higher than 5 × 10-5Pa，Oxygen pressure when deposition is 8～10Pa, and depositing temperature is 700～750 DEG C, more preferably 720 DEG C,Adopt original position pulse laser on substrate, to deposit BiFeO3, when deposition, laser energy is 200mJ～400mJ, frequentlyRate is 1～5Hz, more preferably 3Hz. After completing deposition process, anneal, in annealing process, oxygenPressure is 1 × 104Pa, annealing time is 15～60 minutes, more preferably 30 minutes. After having annealed,Remove the oxygen in settling chamber, be evacuated to vacuum higher than 5 × 10-5Pa, then carries out step B.
In step B, adopt original position pulse laser on inverse ferric magnetosphere, to deposit Co2FeAl0.5Si0.5, depositing temperature is chamberTemperature, temperature range is 10～40 DEG C; Laser energy when deposition is 200mJ～400mJ, and frequency is 1～5Hz,More preferably 3Hz.
In step C, Grown by Magnetron Sputtering protective layer on ferromagnetic layer carries out sputter procedure, sputter in sputtering chamberThe vacuum of chamber is higher than 2 × 10-5Pa, sputter temperature is room temperature, temperature range is 10～40 DEG C, argon when sputterAtmospheric pressure is 0.2～1Pa, more preferably 0.5Pa.
In addition, it should be understood by one skilled in the art that the accompanying drawing providing at this is all for illustrative purposes,And accompanying drawing is not necessarily drawn in proportion.
Meanwhile, should be appreciated that example embodiment is provided, so that the disclosure is comprehensively, and by abundant its scopeConvey to those skilled in the art. A lot of specific detail (for example example of specific features, equipment and method) are givenGo out to provide thorough understanding of the disclosure. It will be apparent to one skilled in the art that and do not need to adopt specific detail, showExample embodiment can be implemented with a lot of different forms, and example embodiment should not be understood to limit the disclosureScope. In some example embodiment, well-known device structure and well-known technology are not in detailDescribe.
When an element or layer be mentioned as another element or layer " on ", " being engaged to ", " being connected to "Or " being coupled to " another element or when layer, its can be directly on another element or layer, directly engaged, connectedOr be connected to another element or layer, or can there is intermediary element or layer. By contrast, when an element is mentioned as" directly " another element or layer " on ", " being directly engaged to ", " being directly connected to " or " directlyBe coupled to " another element or when layer, can not there is not intermediary element or layer. For describing its of relation between elementIts word should be in a similar manner explained (for example, " and between " with " directly between ", " vicinity " and " directlyAdjoining near " etc.). As used herein, term "and/or" comprises in the Listed Items of one or more associationsArbitrary or all combination.
Although term first, second, third, etc. can be used to describe each element, parts, region, layer at thisAnd/or section, but these elements, parts, region, layer and/or section should not limited by these terms. ThisA little terms can be only for by element, parts, region, layer or a section and another element, region, layer or sectionDistinguish. Term and other numerical value term such as " first ", " second " are inferior when not meaning that in the time that this usesOrder or order, unless context explicitly points out. Thereby, the first element discussed below, parts, region, layer orSection can be called as the second element, parts, region, layer or section, and does not deviate from the instruction of example embodiment. ThisOutward, in description of the invention, except as otherwise noted, the implication of " multiple " is two or more.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for art technology peopleMember, the present invention can have various changes and variation. All do within spirit of the present invention and principle anyRevise, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. a FM-AFM film heterojunction structure, comprises inverse ferric magnetosphere (2) and the ferromagnetic layer (3) of stacked setting,It is characterized in that: the material of described ferromagnetic layer (3) is that full Haas is strangled alloy;
The material of described inverse ferric magnetosphere (2) is multi-ferroic material.
2. FM-AFM film heterojunction structure according to claim 1, is characterized in that: described full KazakhstanThis strangles alloy is Co2FeAl0.5Si0.5、Co2FeSi、Co2TiSn or
It is X that full Haas is strangled alloy2YGa, wherein, X is Co, Fe or Ni; Y is V, Cr, Mn or Cu.
Preferably, the thickness of described ferromagnetic layer (3) is 1 to 10 nanometer, more preferably 5 nanometers.
3. FM-AFM film heterojunction structure according to claim 1, is characterized in that: described anti-ironThe material of magnetosphere (2) is BiFeO3、BiFe0.5Mn0.5O3Or YMnO3。
4. according to the FM-AFM film heterojunction structure described in claims 1 to 3 any one, it is characterized in that:Also comprise substrate (1), described inverse ferric magnetosphere (2) and described ferromagnetic layer (3) are cascadingly set on described substrate(1) on.
Preferably, described substrate (1) is strontium titanate monocrystal chip or niobium-doped strontium titanate monocrystal chip.
5. according to the FM-AFM film heterojunction structure described in claims 1 to 3 any one, it is characterized in that:Also comprise protective layer (4), be arranged on described ferromagnetic layer (3).
Preferably, the material of described protective layer (4) is Ta, Pt, Cu, AuRu.
Preferably, the thickness of described protective layer (4) is 1 to 5 nanometer, more preferably 2 nanometers.
6. a preparation method for FM-AFM film heterojunction structure as described in claim 1 to 5 any one,It is characterized in that, comprise the steps:
Steps A, on substrate, deposit multi-ferroic material with form inverse ferric magnetosphere;
Step B, steps A form inverse ferric magnetosphere on deposit full Haas strangle alloy with form ferromagnetic layer.
7. preparation method according to claim 6, is characterized in that: in steps A, on substrate, depositBiFeO3To form described inverse ferric magnetosphere;
Preferably, carry out deposition process in settling chamber, the vacuum of settling chamber is higher than 5 × 10-5Pa；
Preferably, oxygen pressure when deposition is 8～10Pa;
Preferably, depositing temperature is 700～750 DEG C, more preferably 720 DEG C;
Preferably, adopt original position pulse laser on substrate, to deposit BiFeO3, when deposition, laser energy be 200mJ～400mJ, frequency is 1～5Hz, more preferably 3Hz;
Preferably, anneal after completing deposition process, in annealing process, oxygen pressure is 1 × 104Pa, annealingTime is 15～60 minutes, more preferably 30 minutes;
Preferably, after having annealed, remove the oxygen in settling chamber, be evacuated to vacuum higher than 5 × 10-5Pa，Then carry out step B.
8. preparation method according to claim 6, is characterized in that: in step B, adopt former digit pulse to swashLight deposits Co on inverse ferric magnetosphere2FeAl0.5Si0.5；
Preferably, depositing temperature is 10～40 DEG C;
Preferably, laser energy when deposition is 200mJ～400mJ, and frequency is 1～5Hz, more preferably3Hz。
9. preparation method according to claim 6, is characterized in that: after step B completes, carry out step C:On the ferromagnetic layer forming at step B, form protective layer.
Preferably, Grown by Magnetron Sputtering protective layer on ferromagnetic layer;
Preferably, carry out sputter procedure in sputtering chamber, the vacuum of sputtering chamber is higher than 2 × 10-5Pa；
Preferably, sputter temperature is 10～40 DEG C;
Preferably, argon pressure when sputter is 0.2～1Pa, more preferably 0.5Pa.
10. a magnetic storage apparatus, is characterized in that, described magnetic storage arranges and adopts as claim 1 to 9The FM-AFM film heterojunction structure of stating is as magnetic storage medium.
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| CN106400119A (en) * | 2016-08-27 | 2017-02-15 | 许昌学院 | Preparation method based on Co2MnGe/GaAs interface semimetal performance |
| CN109346481A (en) * | 2018-10-16 | 2019-02-15 | 叶建国 | Logical memory device and its manufacturing method |
| CN109507616A (en) * | 2017-09-14 | 2019-03-22 | 中国科学院宁波材料技术与工程研究所 | Characterizing method that antiferromagnet changes in stress magnetic, characterization device and preparation method thereof |
| CN110228822A (en) * | 2019-05-17 | 2019-09-13 | 华中科技大学 | A kind of Ferromagnetic/Antiferromagnetic hetero-junctions and its preparation with exchange bias effect |
| CN112951983A (en) * | 2019-12-11 | 2021-06-11 | 浙江驰拓科技有限公司 | MTJ device |
| CN113243052A (en) * | 2019-11-18 | 2021-08-10 | 西部数据技术公司 | Electric field controllable spin filter tunnel junction magnetoresistive memory device and method of manufacturing the same |
| WO2022016626A1 (en) * | 2020-07-21 | 2022-01-27 | 中国科学院微电子研究所 | Spin electronic device, sot-mram storage unit, storage array, and storage and calculation integrated circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106252504A (en) * | 2016-08-27 | 2016-12-21 | 许昌学院 | BaC surface Half-metallic preparation technology |
| CN106400119A (en) * | 2016-08-27 | 2017-02-15 | 许昌学院 | Preparation method based on Co2MnGe/GaAs interface semimetal performance |
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| CN109346481A (en) * | 2018-10-16 | 2019-02-15 | 叶建国 | Logical memory device and its manufacturing method |
| CN110228822A (en) * | 2019-05-17 | 2019-09-13 | 华中科技大学 | A kind of Ferromagnetic/Antiferromagnetic hetero-junctions and its preparation with exchange bias effect |
| CN113243052A (en) * | 2019-11-18 | 2021-08-10 | 西部数据技术公司 | Electric field controllable spin filter tunnel junction magnetoresistive memory device and method of manufacturing the same |
| CN112951983A (en) * | 2019-12-11 | 2021-06-11 | 浙江驰拓科技有限公司 | MTJ device |
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| WO2022016626A1 (en) * | 2020-07-21 | 2022-01-27 | 中国科学院微电子研究所 | Spin electronic device, sot-mram storage unit, storage array, and storage and calculation integrated circuit |
| CN114242886A (en) * | 2021-11-30 | 2022-03-25 | 华中科技大学 | Method and device for regulating and controlling two-dimensional ferromagnetic/antiferromagnetic heterojunction exchange bias |
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