CN109346481A - Logical memory device and its manufacturing method - Google Patents
Logical memory device and its manufacturing method Download PDFInfo
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- CN109346481A CN109346481A CN201811203533.4A CN201811203533A CN109346481A CN 109346481 A CN109346481 A CN 109346481A CN 201811203533 A CN201811203533 A CN 201811203533A CN 109346481 A CN109346481 A CN 109346481A
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- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000010410 layer Substances 0.000 claims abstract description 159
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 118
- 229910052742 iron Inorganic materials 0.000 claims abstract description 63
- 230000002452 interceptive effect Effects 0.000 claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 238000003860 storage Methods 0.000 claims abstract description 24
- 239000011241 protective layer Substances 0.000 claims abstract description 17
- 230000033228 biological regulation Effects 0.000 claims abstract description 12
- 230000000694 effects Effects 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 34
- 230000005684 electric field Effects 0.000 claims description 29
- 238000000151 deposition Methods 0.000 claims description 19
- 238000004544 sputter deposition Methods 0.000 claims description 18
- 230000008021 deposition Effects 0.000 claims description 12
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 12
- 238000010894 electron beam technology Methods 0.000 claims description 10
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 229910002902 BiFeO3 Inorganic materials 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 230000005294 ferromagnetic effect Effects 0.000 claims description 6
- 239000002223 garnet Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 238000004549 pulsed laser deposition Methods 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 229910002244 LaAlO3 Inorganic materials 0.000 claims description 5
- 229910002370 SrTiO3 Inorganic materials 0.000 claims description 5
- 229910009567 YMnO3 Inorganic materials 0.000 claims description 5
- JEIPFZHSYJVQDO-UHFFFAOYSA-N ferric oxide Chemical compound O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 5
- 229910009493 Y3Fe5O12 Inorganic materials 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 229910000889 permalloy Inorganic materials 0.000 claims description 3
- 229910002971 CaTiO3 Inorganic materials 0.000 claims 1
- 210000001367 artery Anatomy 0.000 claims 1
- 229910002113 barium titanate Inorganic materials 0.000 claims 1
- 210000003462 vein Anatomy 0.000 claims 1
- 230000005690 magnetoelectric effect Effects 0.000 abstract description 7
- 238000002360 preparation method Methods 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 230000005418 spin wave Effects 0.000 description 25
- 230000005291 magnetic effect Effects 0.000 description 16
- 238000000034 method Methods 0.000 description 10
- 230000005415 magnetization Effects 0.000 description 8
- 230000010287 polarization Effects 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 230000005611 electricity Effects 0.000 description 5
- 239000007775 ferroic material Substances 0.000 description 5
- 238000004506 ultrasonic cleaning Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000005621 ferroelectricity Effects 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000002269 spontaneous effect Effects 0.000 description 4
- 229910000859 α-Fe Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 description 1
- 239000002885 antiferromagnetic material Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005323 ferromagnetic ordering Effects 0.000 description 1
- 230000005307 ferromagnetism Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000001727 in vivo Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000013152 interventional procedure Methods 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- AMWRITDGCCNYAT-UHFFFAOYSA-L manganese oxide Inorganic materials [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- -1 rare earth manganese oxide Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H10B51/40—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the peripheral circuit region
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Abstract
The present invention provides a kind of logic storage memory device and preparation method thereof, and the logical storage storaging piece includes: substrate, for carrying the logic storage memory device；More iron layer, more iron layer further include electrode in more iron layer, and be located at first buffer layer and second buffer layer between more iron layer and the substrate between more iron layer and the electrode for generating magnetoelectric effect；Interfering layer, including waveguide region and output end, the interfering layer have gyromagnetic effect；Protective layer protects the interfering layer positioned at the top of interfering layer；Wherein, the logic storage memory device is by the magneto-electric coupled regulation interfering layer of more iron layer to realize logic store function.Storage circuit is stored compared to traditional semiconductor devices and logic, the present invention can effectively solve the problem that thermal losses and quiescent dissipation problem.
Description
Technical field
The present invention relates to logical memory device technical fields, store more particularly to a kind of logic based on spin wave interference
Device and its manufacturing method.
Background technique
Logical memory device is the important composition unit of various logic store function circuit needed for forming electronic computer,
The excellent reliability for determining entire logic storage circuit of logical memory device performance.As integrated level increases, component
For size reduction to nanometer scale, the requirement of information processing and the miniaturization of transmission unit to low-power consumption is further urgent.And it is traditional
Logical memory device based on silicon, since energy consumption can inevitably occur in the process of moving for carriers electron or hole
It dissipates, and with the reduction of device size, energy loss is more serious, therefore is no longer satisfied the requirement of minimum power consumption.
Spin wave, or be magnon, refer to the eigen mode of the collective vibration of electron spin in magnetic order material.It can
Entrained phase information and its variation realize data as information carrier using in using spin wave propagation and interventional procedures
Transmission and logic storage calculate to reduce energy loss.
Summary of the invention
In view of this, the present invention provides a kind of logical memory device, and it is high to solve energy consumption in the prior art, rely on carrier
Migration effect, can not effectively solve the problems, such as thermal losses and quiescent dissipation.
On the one hand, the present invention provides a kind of logical memory device, comprising:
Substrate, for carrying the logical memory device；
More iron layer, more iron layer further include electrode in more iron layer for generating electric field, and are located at described
First buffer layer and second buffer layer between more iron layer and the substrate between more iron layer and the electrode；
Interfering layer, including waveguide region and output end, the interfering layer have gyromagnetic effect；
Protective layer protects the interfering layer positioned at the top of interfering layer；
Wherein, the logical memory device regulates and controls the interfering layer by the electric field of more iron layer to realize that logic stores
Function.
It preferably, include ring structure between the waveguide region and output end of interfering layer, the ring structure includes two
Symmetrical annulus arc branch.
Preferably, ring structure is vertical with the direction of the electric field.
Preferably, more iron layer electrodes are that logic stores input terminal, and the interfering layer output end is that logic stores output end, institute
Stating logic storage input is 0, and no electric field regulation, the logic storage output is 1；The logic storage input is 1, described more
Under the electric field regulation of iron layer, the logic storage output is 0.
Preferably, the material of the substrate includes Gd-Ga garnet；
More iron layer include at least following material in any one: BiFeO3, GaFeO3, BiCrO3, TbMnO3,
Bi2FeCrO6、BiMnO3、HoMn2O5、HoMn2O5、YbMn2O5、ScMn2O5、YMn2O5、GaMn2O5、DyMn2O5、
ErMn2O5, HoMnO3, YbMnO3, ScMnO3, YMnO3, GaMnO3, DyMnO3, ErMnO3, the ferromagnetic layer is with a thickness of 50-
150nm；
The material of the interfering layer includes at least one of Y3Fe5O12, permalloy, and the interfering layer is with a thickness of 50-
60nm。
The material of the first buffer layer and second buffer layer be at least one of SrTiO3 or LaAlO3, described first
Buffer layer and second buffer layer are with a thickness of 1-10nm；
The material of the electrode is at least one of Pt, W, Ta, thickness of electrode 3-8nm；
The material of the protective layer is at least one of Pt, W, Ta, protective layer thickness 5-20nm.
It preferably, include another group of electrode on interfering layer, it is corresponding with the waveguide region and the output end respectively.
According to another aspect of the present invention, a kind of production method of above-mentioned logical memory device is also provided, comprising:
Substrate is cleaned；
First buffer layer is formed on substrate after the cleaning；
More iron layer are formed in first buffer layer；
One group of electrode is formed in more iron layer；
The interfering layer is formed in more iron layer；
Another group of electrode is formed on the interfering layer；
Protective layer is formed on the interfering layer.
Preferably, substrate is cleaned using ultrasonic wave, and the buffer layer and protective layer are all made of magnetron sputtering and are formed, institute
It states electrode layer to be formed by magnetron sputtering and electron beam exposure, more iron layer and the interfering layer pass through pulsed laser deposition shape
At.
Preferably, in more iron layer pulsed laser deposition techniques, settling chamber's background vacuum need to be higher than 10-4Pa, oxygen when sputtering
Air pressure is 1-10Pa, and depositing temperature is 700-750 DEG C, and energy is 100-400mJ when deposition, and laser frequency is 1-5Hz when deposition,
Umber of pulse is 100-3000 pulse.
Preferably, in interfering layer pulsed laser deposition technique, settling chamber's background vacuum need to be higher than 10-4Pa, oxygen when sputtering
Air pressure is 1-10Pa, and depositing temperature is room temperature, and energy is 100-400mJ when deposition, and laser frequency is 1-5Hz, pulse when deposition
Number is 100-1500 pulse.
The beneficial effects of the present invention are:
The logical memory device of multi-ferroic material provided by the invention based on spin wave interference and electric field regulation, passes through electricity
Field control controls the phase and amplitude of spin wave, and the carrier that spin wave is transmitted as information completes logic by interference effect
Store calculation function.Compared to traditional semiconductor devices and logic storage circuit, the present invention can effectively solve the problem that thermal losses and
Quiescent dissipation problem.The present invention is designed using co-planar waveguide, can effectively enhance the intensity of spin wave, and transmission medium has low damage
Characteristic is consumed, can guarantee being stabilized for spin wave to a greater extent, while reducing the difficulty of signal detection and analysis.
Detailed description of the invention
By referring to the drawings to the description of the embodiment of the present invention, the above and other purposes of the present invention, feature and
Advantage will be apparent from, in the accompanying drawings:
Fig. 1 shows the schematic diagram of the logical memory device of the embodiment of the present invention.
Fig. 2 shows the top views of ferromagnetic layer and interfering layer in the embodiment of the present invention.
Fig. 3 a, 3b, 3c show the input and output schematic diagram and its truth table of logical memory device of the embodiment of the present invention.
Fig. 4 a to 4d shows the production process of logical memory device in the embodiment of the present invention.
Specific embodiment
Following discloses provide many different embodiments or example to implement the different characteristic of the application.It is described below
Component or the specific embodiment of arrangement are to simplify the present invention.Certainly, these are only that example is not intended to limit the present invention.
In addition, in the specification and in the claims, term " first ", " second " etc. between analogous element for carrying out
It distinguishes, and if the sequence of time sequencing, spatial order, hierarchal order or any other mode may not be described, should be appreciated that
These terms used are interchangeable under appropriate environment, and the embodiment of the present invention described herein can be to be described herein
Or other other than showing sequentially operate.
It should be noted that the term " includes " used in detail in the claims should not be construed as limited to hand listed below
Section, other elements or step is not precluded in it.It should be interpreted the specified feature, number, the step being such as related to as a result,
Or the presence of component, but it is not excluded that the presence of other one or more features, number, step or component or a combination thereof
Or addition.Therefore, the range of word " equipment including device A and B " should not be limited to the device being only made of component A and B.
This means that the associated component of equipment is A and B for the present invention.
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Similarly, it should be understood that in the description of exemplary embodiment of the present invention, in make the present invention disclose smoothness and
Help to understand that the purpose of the one or more aspects in terms of each invention, each feature of the invention are grouped in together sometimes
Single embodiment, attached drawing or in the description of embodiment and attached drawing.However, the disclosure method is not necessarily to be construed as reflection institute
Claimed invention needs the intention of the more features than being expressly recited in each claim.On the contrary, such as following right
It is required that reflection, it is in terms of invention, it is fewer than all features of single embodiments disclosed above.Specific embodiment party as a result,
Claim after formula is expressly incorporated into the specific embodiment, and wherein each claim independently represents this hair
A bright individual embodiment.
In addition, although this time some embodiments of description include some features included in other embodiments but do not have it
The combination intention of other features for including in his embodiment, the feature of different embodiments is fallen within the scope of the present invention, and shape
At will by those skilled in the art understand that different embodiments.For example, in the following claims, required embodiment
Any one of can be in any combination.
It should be noted that used specific term should not be recognized when describing particularly unique feature of the present invention or aspect
To be to imply that the term is this time to be redefined to be limited to include feature of the invention associated with this term or side
Any specific feature in face.
In the description that this is provided, multiple details are elaborated.It should be appreciated, however, that the embodiment of the present invention does not have
It is practiced in the case where these details.In other embodiments, in order not to interfere understanding of this description, do not show in detail
Known method, structure and technology out.
The present invention can be presented in a variety of manners, some of them example explained below.
The present invention proposes that a kind of logical memory device based on spin wave interference and multi-iron material, multi-iron material refer to simultaneously
The single-phase compounds of property with two or more in ferroelectricity, ferromagnetism, ferroelasticity.Multi-iron material is in certain temperature
There is in range spontaneous polarization and spontaneous manetization, in the presence of that can cause magnetoelectric effect while two kinds of performances, i.e., electric polarization and
Mutual regulation between magnetization.The physical effect of multi-ferroic material is: response of the iron electric polarization to external magnetic field, and from gyromagnet
Response of the square to external electrical field, that is, there are coupling effects between the magnetism and ferroelectricity coexisted, to realize magnetic and ferroelectricity
Between mutual regulation.Single-phase ferromagnetic ferroelectricity multi-ferroic material has broken traditional electromagnetic coupling mode, allows people by applying
The mode of extra electric field is added to have an impact the magnetic polarization of material.In multi-iron material, electric field E and magnetic field H cause electrode respectively
Change P and magnetization M, and existing magnetoelectric effect between P and M in multi-iron material.Magnetoelectric effect refers to electrode
Change and mutually regulate and control between intensity and the intensity of magnetization, i.e., magnetic field H can induce electric polarization P, conversely, electric field E can induce magnetization by force
Spend M.The intensity of magnetization of material is controlled by applying external electrical field in the present invention.
In multi-iron material research, magnetoelectric effect is extremely important, and the expansion of free energy is carried out by Landau theory,
Available formula (1).Under external electric field action, magnetoelectricity can realize mutual regulation.Single-phase magnetoelectricity multi-iron material has simultaneously
Ferromagnetic ordering and ferroelectric order can be polarized using interaction between the two with electric field induced magnetic field or Magnetic Field-Induced.
Apply electric field in Ferro-Electric Semiconductor material, generates very big electric field in vivo after electric field polarization, there is polarization on surface
Charge, magnetization direction with electric field variation present snapback, surface electricity between magnetic exist couple.When carrier is poly-
When collection, by electric field action along same direction, the intensity of magnetization increases the magnetic moment of spontaneous manetization；When carrier dissipates, spontaneous magnetic
The magnetic domain of change is returned to mixed and disorderly state, and the intensity of magnetization becomes smaller.Bismuth ferrite (BiFeO3) is antiferromagnetic materials, in bismuth ferrite and
There are exchange bias effects between magnetosphere for the interface of garnet type ferrite, can be with the magnetic moment in pinning garnet type ferrite.
Fig. 1 shows the schematic diagram of the logical memory device of the embodiment of the present invention.Logical memory device 100 includes: substrate
110, more iron layer 120, interfering layer 130, first buffer layer 140, second buffer layer 150, electrode 160, protective layer 170.
Wherein, substrate 110, more iron layer 120, interfering layer 130 stack gradually from bottom to up, the first buffer layer position
It further include one group of electrode for being located at the left and right sides between more iron layer 120 and the substrate 110, in more iron layer
160, it is preferable that there is second buffer layer 150 between the electrode 160 and more iron layer 120.
The substrate 110 is, for example, GGG substrate, i.e. Gd-Ga garnet substrate.
More iron layer 120 are, for example, by single phase multi-iron material single-phase more oxide ferroelectric thin films to be made, as BiFeO3,
GaFeO3、BiCrO3、TbMnO3、Bi2FeCrO6、BiMnO3、HoMn2O5、HoMn2O5、YbMn2O5、ScMn2O5、YMn2O5、
GaMn2O5,DyMn2O5,ErMn2O5,HoMnO3,YbMnO3,ScMnO3,YMnO3,GaMnO3,DyMnO3,ErMnO3.Thickness
About 50-150nm.
The interfering layer 130 is, for example, at least one of Y3Fe5O12, permalloy, and thickness is about 50-60nm.It is preferred that
Ground, the interfering layer 130 includes another group of electrode (not shown), opposite with the waveguide region and the output end respectively
It answers, excites the magnon in YIG waveguide region by modes such as electric current or STT, generated spin wave by magnon and transported in YIG
It is defeated.
Between substrate 110 and more iron layer 120, between more iron layer 120 and electrode 160 and interfering layer 130 and another group
Need to be added buffer layer between electrode, the cushioning layer material is, for example, SrTiO3 (STO) or LaAlO3 (LAO), thickness are about
1-10nm。
The protective layer 170 covers the top of the interfering layer 130, and material is, for example, Ta, and thickness is about 5-20nm.
The electrode 160 and another group of electrode material are, for example, that the materials such as Au, Cu, Pt are made, and thickness is about 3-8nm.Its
In more iron layer two sides electrode 160, be, using the magnetoelectric effect of multi-ferroic material, to pass through to be powered and generate electric field
Magnetic moment in the more iron layer of electric field adjusting.Another group of electrode in interfering layer two sides is to detect interference by measurement voltage
Whether the spin wave in layer changes.
The present invention uses substrate/buffer layer/more iron layer/interfering layer/protective layer structure, is passed through using magnetoelectric effect
Extra electric field regulates and controls the magnetic moment in single-phase more ferriferous oxides, and then is imitated using the exchange biased pinning between more iron layer and interfering layer
The magnetic moment in interfering layer should be regulated and controled.To realize the reversion of magnetic moment in interfering layer.And then it is realized using constructive interference and destructive interference
Spin wave/magnon logic storage input terminal stores control to the logic of logic storage output end.
Fig. 2 shows the top views of more iron layer and interfering layer in the embodiment of the present invention.Interfering layer 130 includes waveguide region
131, ring structure 132 and output end 133, ring structure 132 include upper arc branch 1321 and arc lower branch 1322.More iron
Layer 120 is located at the lower section of the ring structure 132.
Waveguide region 131 is used to generate spin wave, and the monomer spin wave in left side is split into slow-wave structure using interferometer,
And they are traveled in upper arc branch 1321 and arc lower branch 1322.Vertical distribution is generated upper using more iron layer 120
Electric field between lower two branches.
Fig. 3 a, 3b, 3c show spin wave of the present invention/magnon embodiment logical memory device input and output schematic diagram
And its truth table.As can be seen from the figure in the case where no electric field regulates and controls, it is expressed as logic storage 0 i.e. I=0 of input, is generated in left side
Slow-wave structure on right side because lacking the difference on amplitude and phase, and present constructive interference (in the principle of stacking of wave, if two
The wave crest (or trough) of wave arrives at same place simultaneously, claims two waves in the same phase of point, interference wave can generate maximum amplitude, referred to as
Constructive interference), as 1 i.e. I=1 of logic storage input.Generating electric field influences, under electric field regulation, in the slow wave knot that left side generates
There are phase differences on right side for structure, so destructive interference is presented, logic storage output is 0.Final logic store function is as schemed
Shown in truth table in 3c.
Fig. 4 a to Fig. 4 d shows the production process of logical memory device in the embodiment of the present invention.
As shown in fig. 4 a, substrate 110 is carried out forming first buffer layer 140 on the substrate 110 cleaned and after the cleaning.Lining
The processing at bottom 110 be, for example, by used substrate 110 with alcohol ultrasonic cleaning three times, ten minutes every time, finally spend from
Sub- water cleaning.First buffer layer 140 is made of magnetron sputtering method, by setting-out, is vacuumized, and electromagnetism sputtering samples four steps
Suddenly.Sputtering chamber background vacuum must be higher than 10-5Pa, sputter temperature are room temperature, and sputtering pressure 0.1-1.5Pa prepares buffer layer
Film thickness be about 1-10nm.The preparation method of subsequent buffer layer is similar with first buffer layer, repeats no more.
As shown in Figure 4 b, more iron layer 120 are formed in first buffer layer 140, and one group of electrode is formed in more iron layer 120
160, and corresponding second buffer layer 150 is prepared between electrode 160 and more iron layer 120.More iron layer are made for example using calcium titanium
Mine type compound ABO3 (such as BiFeO3) or rare earth manganese oxide (RMnO3, R are rare earth element, RMnO3 be, for example, YMnO3 or
BiMnO3), basic skills is pulsed laser deposition, by setting-out, is vacuumized, heating, laser pulse, five steps of cooling sampling
Suddenly.Settling chamber's background vacuum must be higher than 10-4Pa, oxygen pressure is 1Pa-10Pa when sputtering, and depositing temperature is 700-750 DEG C, is sunk
Energy is 100mJ-400mJ when product, and laser frequency is 1-5Hz when deposition, and umber of pulse is 100-3000 pulse, more iron layer of preparation
Film thickness is, for example, 50nm-150nm.Production electrode 160 adds electron beam exposure, for example, electricity of Pt material using magnetron sputtering
Pole 160 is vacuumized by setting-out, and electromagnetism sputtering samples four steps and completes magnetron sputtering.Sputtering chamber background vacuum must be high
In 10-5Pa, sputter temperature is room temperature, and sputtering pressure 0.1-1.5Pa, preparing electrode film thickness is about 5nm.Electron beam exposes
Light: carrying out gluing and heating after substrate is carried out ultrasonic cleaning respectively, carry out electron beam exposure with electron beam straight-writing system, shows
Shadow fixing, the Pt film of no photoresist protection is removed with Ar Ion Beam Etching, and the method for recycling magnetron sputtering insulate
The sample filled by insulating layer is finally removed photoresist and the insulation in interface by layer landfill by acetone soak and ultrasonic cleaning
Layer.
As illustrated in fig. 4 c, the interfering layer 130 is formed in more iron layer 120, and formed on the interfering layer 130
Another group of electrode (not shown).Production interfering layer is vacuumized using pulsed laser deposition by setting-out, is heated, and is beaten and is swashed
Light, five steps of cooling sampling.Settling chamber's background vacuum must be higher than 10-4Pa, oxygen pressure is 1Pa-10Pa, deposition temperature when sputtering
Degree is room temperature, and energy is 100mJ-400mJ when deposition, and laser frequency is 1-5Hz when deposition, and umber of pulse is 100-1500 pulse,
The interfering layer of preparation is with a thickness of 50nm-60nm.It makes another group of electrode and electron beam exposure, for example, Pt electricity is added using magnetron sputtering
Pole is vacuumized by setting-out, and electromagnetism sputtering samples four steps and completes magnetron sputtering.Sputtering chamber background vacuum must be higher than
10-5Pa, sputter temperature are room temperature, and sputtering pressure 0.1-1.5Pa, preparing electrode film thickness is about 5nm.Electron beam exposure:
Gluing and heating are carried out respectively after substrate is carried out ultrasonic cleaning, carries out electron beam exposure with electron beam straight-writing system, are developed
Fixing, the Pt film of no photoresist protection is removed with Ar Ion Beam Etching, and the method for recycling magnetron sputtering carries out insulating layer
The sample filled by insulating layer is finally removed photoresist and the insulation in interface by landfill by acetone soak and ultrasonic cleaning
Layer.
As shown in figure 4d, protective layer 170 is formed on the interfering layer 130.Protective layer 170 is prepared using magnetron sputtering
Method is vacuumized by setting-out, and electromagnetism sputtering samples four steps.Sputtering chamber background vacuum must be higher than 10-5Pa, sputter temperature
For room temperature, sputtering pressure 0.1-1.5Pa, preparing protective layer thickness is about 5-20nm.
Preferably, the material of the substrate is, for example, Gd-Ga garnet；More iron layer include at least in following material
Any one: BiFeO3, GaFeO3, BiCrO3, TbMnO3, Bi2FeCrO6, BiMnO3, HoMn2O5, HoMn2O5,
YbMn2O5、ScMn2O5、YMn2O5、GaMn2O5、DyMn2O5、ErMn2O5、HoMnO3、YbMnO3、ScMnO3、YMnO3、
GaMnO3,DyMnO3,ErMnO3；The material of the interfering layer includes Y3Fe5O12；The first buffer layer and second buffer layer
Material be at least one of SrTiO3 or LaAlO3；The material of the electrode is at least one of Pt, W, Ta；The guarantor
The material of sheath is at least one of Pt, W, Ta.
The logical memory device of multi-ferroic material provided by the invention based on spin wave interference and electric field regulation, passes through electricity
Field control controls the phase and amplitude of spin wave, and the carrier that spin wave is transmitted as information completes logic by interference effect
Store calculation function.Compared to traditional semiconductor devices and logic storage circuit, the present invention can effectively solve the problem that thermal losses and
Quiescent dissipation problem.The present invention is designed using co-planar waveguide, can effectively enhance the intensity of spin wave, and transmission medium has low damage
Characteristic is consumed, can guarantee being stabilized for spin wave to a greater extent, while reducing the difficulty of signal detection and analysis.
Above-described embodiment is citing of the invention, although disclosing the embodiment of the present invention and attached drawing for the purpose of illustration,
But it will be appreciated by those skilled in the art that: without departing from the spirit and scope of the invention and the appended claims, respectively
Kind replacement, change and modification are all possible.Therefore, the present invention should not be limited to embodiment and attached drawing disclosure of that.
Claims (10)
1. a kind of logic stores memory device characterized by comprising
Substrate, for carrying the logic storage memory device；
More iron layer, it further includes electrode in more iron layer, and be located at described more that more iron layer are magneto-electric coupled for producing
First buffer layer and second buffer layer between iron layer and the substrate between more iron layer and the electrode；
Interfering layer, including waveguide region and output end, the interfering layer have gyromagnetic effect；
Protective layer protects the interfering layer positioned at the top of interfering layer；
Wherein, the logical memory device realizes that logic is stored by the magneto-electric coupled regulation interfering layer of more iron layer
Function.
2. logical memory device according to claim 1, which is characterized in that the waveguide region and output end of the interfering layer
Between include ring structure, the ring structure include two symmetrical annulus arc branches.
3. logical memory device according to claim 2, which is characterized in that the direction of the ring structure and the electric field
Vertically.
4. logical memory device according to claim 1, which is characterized in that the ferromagnetic layer electrode is logic storage input
End, the interfering layer output end are that logic stores output end, and the logic storage input is 0, and no electric field regulation, the logic is deposited
Storage output is 1；The logic storage input is 1, and under the electric field regulation of the ferromagnetic layer, the logic storage output is 0.
5. logical memory device according to claim 1, which is characterized in that
The material of the substrate includes Gd-Ga garnet；
More iron layer include at least following material in any one: BiFeO3, GaFeO3, BiCrO3, TbMnO3,
Bi2FeCrO6、BiMnO3、HoMn2O5、HoMn2O5、YbMn2O5、ScMn2O5、YMn2O5、GaMn2O5、DyMn2O5、
ErMn2O5, HoMnO3, YbMnO3, ScMnO3, YMnO3, GaMnO3, DyMnO3, ErMnO3, the ferromagnetic layer is with a thickness of 20-
150nm；
The material of the interfering layer includes at least one of Y3Fe5O12, permalloy, and the interfering layer is with a thickness of 50-
60nm。
The material of the first buffer layer and second buffer layer is at least one in SrTiO3, LaAlO3, BaTiO3 and CaTiO3
Kind, the first buffer layer and second buffer layer are with a thickness of 1-10nm；
The material of the electrode is at least one of Pt, W, Ta, thickness of electrode 3-8nm；
The material of the protective layer is at least one of Pt, W, Ta, protective layer thickness 5-20nm.
6. logical memory device according to claim 1, which is characterized in that it include another group of electrode on the interfering layer,
It is corresponding with the waveguide region and the output end respectively.
7. a kind of production method of logical memory device, which is characterized in that the production method includes:
Substrate is cleaned；
First buffer layer is formed on substrate after the cleaning；
More iron layer are formed in first buffer layer；
One group of electrode is formed in more iron layer；
The interfering layer is formed in more iron layer；
Another group of electrode is formed on the interfering layer；
Protective layer is formed on the interfering layer.
8. the production method of logical memory device according to claim 7, which is characterized in that the substrate uses ultrasonic wave
It is cleaned, the buffer layer and protective layer are all made of magnetron sputtering and are formed, and the electrode layer passes through magnetron sputtering and electron beam
Exposure is formed, and more iron layer and the interfering layer are formed by pulsed laser deposition.
9. the production method of logical memory device according to claim 8, which is characterized in that more iron layer laser pulses
In depositing operation, settling chamber's background vacuum need to be higher than 10-4Pa, oxygen pressure is 1-10Pa, depositing temperature 700-750 when sputtering
DEG C, energy is 100-400mJ when deposition, and laser frequency is 1-5Hz when deposition, and umber of pulse is 100-3000 pulse.
10. the production method of logical memory device according to claim 8, which is characterized in that the interfering layer laser arteries and veins
It rushes in depositing operation, settling chamber's background vacuum need to be higher than 10-4Pa, oxygen pressure is 1-10Pa when sputtering, and depositing temperature is room temperature,
Energy is 100-400mJ when deposition, and laser frequency is 1-5Hz when deposition, and umber of pulse is 100-1500 pulse.
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| CN104779342A (en) * | 2015-04-20 | 2015-07-15 | 北京航空航天大学 | Logic device based on spin wave interference and multiferroic material |
| CN105609630A (en) * | 2016-02-01 | 2016-05-25 | 唐山市众基钢结构有限公司 | Ferromagnetic-antiferromagnetic thin film heterojunction structure, fabrication method thereof and magnetic storage device |
| CN209993599U (en) * | 2018-10-16 | 2020-01-24 | 叶建国 | Logic memory device |
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| CN104779342A (en) * | 2015-04-20 | 2015-07-15 | 北京航空航天大学 | Logic device based on spin wave interference and multiferroic material |
| CN105609630A (en) * | 2016-02-01 | 2016-05-25 | 唐山市众基钢结构有限公司 | Ferromagnetic-antiferromagnetic thin film heterojunction structure, fabrication method thereof and magnetic storage device |
| CN209993599U (en) * | 2018-10-16 | 2020-01-24 | 叶建国 | Logic memory device |
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