CN104934529A - Magnetic junction for a magnetic device, and forming method thereof - Google Patents
Magnetic junction for a magnetic device, and forming method thereof Download PDFInfo
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
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- H—ELECTRICITY
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Abstract
The invention provides a method for providing a magnetic junction which can be used in a magnetic device, and the magnetic junction thereof. The method comprises providing a free layer, a pinned layer and a non-magnetic interval layer between the free layer and the pinned layer. The free layer can be switched among a plurality of stable magnetic states when a writing current passes through the magnetic junction. At least one step for providing the free layer comprises a plurality of first steps, and the step for providing the pinned layer comprises a plurality of second steps. The first steps and the second steps comprise depositing one part of the layer, depositing a sacrificial layer, annealing the part of the magnetic junction below the sacrificial layer, and depositing the residual part of the layer. The layer can be the free layer, the pinned layer or both.
Description
Technical field
The present invention relates to magnetic junction that can be used for magnetic device and forming method thereof, more specifically, relate to the perpendicular magnetic anisotropic magnetic junction that can be used for spin-transfer torque magnetic device and utilize and sacrifice the method that insert layer forms it.
Background technology
Magnetic memory, especially MAGNETIC RANDOM ACCESS MEMORY (MRAM), due to the potentiality of their high read/write speed, excellent durability, non-volatile and operation during low-power consumption and draw increasing concern.MRAM can utilize magnetic material as information recording carrier to store information.The MRAM of one type is spin-transfer torque random access memory (STT-MRAM).STT-MRAM uses magnetic junction, and this magnetic junction is write at least in part by being instantaneously driven across the electric current of magnetic junction.The spin polarized current being instantaneously driven across magnetic junction applies on the magnetic moment of spin-torque in magnetic junction.As a result, the layer having the magnetic moment responding described spin-torque can be switched to expectation state.
Such as, Fig. 1 depicts and conventional magnetic tunnel knot (MTJ) 10 is shown, as it can be used to conventional STT-MRAM.Conventional MTJ 10 is usually positioned on substrate 12.Bottom contact 14 and top contact 22 may be used for driving current through conventional MTJ 10.Conventional MTJ uses conventional seed layer (not shown), can comprise cover layer (not shown) and can comprise conventional antiferromagnetic (AFM) layer (not shown).Conventional magnetic knot 10 comprises conventional nailed layer 16, conventional barrier layer 18 and conventional free layer 20.Top contact 22 is also shown.Conventional contact 14 and 22 at electric current perpendicular on plane (CPP) direction or along z-axis drive current as shown in Figure 1.Usually, the conventional nailed layer 16 in the middle of layer 16,18 and 20 is near substrate 12.
Conventional nailed layer 16 and conventional free layer 20 are magnetic.The magnetization 17 of conventional nailed layer 16 be fixed or pinning in particular directions.Although be illustrated as simple (single) layer, conventional nailed layer 16 can comprise multiple layer.Such as, conventional nailed layer 16 can be comprise magnetospheric synthetic anti-ferromagnetic (SAF) layer by thin conductive layer such as Ru antiferromagnetic coupling.In such SAF, the multiple magnetospheres with Ru interlaminate can be used.In another embodiment, the coupling across Ru layer can be ferromagnetic.
Conventional free layer 20 has changeable magnetization 21.Although be illustrated as simple layer, conventional free layer 20 also can comprise multiple layer.Such as, conventional free layer 20 can be comprise magnetospheric synthesis layer that is antiferromagnetic by thin conductive layer such as Ru or ferromagnetic coupling.Although be illustrated as perpendicular to plane, the magnetization 21 of conventional free layer 20 can be planar.Therefore, nailed layer 16 and free layer 20 can have respectively perpendicular to its magnetization 17 and 21 of the planar orientation of described layer.
For switching the magnetization 21 of conventional free layer 20, electric current is driven by perpendicular to plane (in a z-direction).When enough electric currents are driven into bottom contact 14 from top contact 22, the magnetization 21 of conventional free layer 20 can be switched to the magnetization 17 being parallel to conventional nailed layer 16.When enough electric currents are driven into top contact 22 from bottom contact 11, the magnetization 21 of free layer can be switched to the magnetization being antiparallel to nailed layer 16.Difference in magnetic configuration corresponds to the different magnetic resistance of conventional MTJ 10 also therefore corresponding to the Different Logic state (such as logical zero and logical one) of conventional MTJ 10.
Due to the possibility that they use in various applications, carry out the research of magnetic memory.Such as, the mechanism of the performance improving STT-RAM is expected to be useful in.Therefore, required is the method and system of the performance of the memory that can improve based on spin-transfer torque.Method and system described herein solves such demand.
Summary of the invention
Describe a kind of for providing method and this magnetic junction of the magnetic junction that can be used in magnetic device.The method comprises provides free layer, nailed layer and the nonmagnetic spacer layer between free layer and nailed layer.Free layer can switch through magnetic junction at write current between stable magnetic states.At least one providing in the step of free layer comprises more than first step, provides the step of nailed layer to comprise more than second step.First time and more than second step comprise the part of sedimentary deposit, deposition of sacrificial layer, annealing magnetic junction the part below sacrifice layer and deposit the remainder of this layer.This layer can be free layer, nailed layer or both.Therefore, more than first step comprise deposition free layer Part I, deposit the first sacrifice layer, the first annealing temperature being greater than 25 degrees Celsius at least free layer a part and the first sacrifice layer, remove the first sacrifice layer; And the Part II of deposition free layer.More than second step comprise the Part I of deposition nailed layer, depositing second sacrificial layer, the second annealing temperature being greater than 25 degrees Celsius at least nailed layer Part I and the second sacrifice layer, limit the part comprising the Part I of free layer, nonmagnetic spacer layer and nailed layer of magnetic junction, remove the Part II of the second sacrifice layer and deposition nailed layer.
Accompanying drawing explanation
Fig. 1 illustrates conventional magnetic junction.
Fig. 2 shows and can be used in magnetic memory and the one exemplary embodiment of the method for the magnetic junction that spin-transfer torque can be utilized to programme for providing.
Fig. 3 illustrates and can be used in magnetic memory and the one exemplary embodiment of the magnetic junction that spin-transfer torque can be utilized to programme.
Fig. 4 illustrates and can be used in magnetic memory and another one exemplary embodiment of the magnetic junction that spin-transfer torque can be utilized to programme.
Fig. 5 illustrates another one exemplary embodiment of the method for providing the part that can be used for the magnetic junction that also spin-transfer torque can be utilized to programme in magnetic memory.
Fig. 6 illustrates and can be used in magnetic memory and the one exemplary embodiment of the magnetic junction that spin-transfer torque can be utilized to programme.
Fig. 7 illustrates another one exemplary embodiment for providing the method that can be used for the magnetic junction that also spin-transfer torque can be utilized to programme in magnetic memory.
Fig. 8 illustrates and can be used in magnetic memory and the one exemplary embodiment of the magnetic junction that spin-transfer torque can be utilized to programme.
Fig. 9 illustrates another one exemplary embodiment for providing the method that can be used for the magnetic junction that also spin-transfer torque can be utilized to programme in magnetic memory.
Figure 10-22 illustrates and can be used in magnetic memory and the magnetic junction one exemplary embodiment during manufacture that spin-transfer torque can be utilized to programme.
Figure 23-24 illustrates and can be used in magnetic memory and magnetic junction another one exemplary embodiment during manufacture that spin-transfer torque can be utilized to programme.
Figure 25 illustrates the one exemplary embodiment of the memory of the magnetic junction in the memory element (or multiple memory element) utilizing memory cell (or multiple memory cell).
Embodiment
One exemplary embodiment relates to the magnetic junction that can be used for magnetic device such as magnetic memory and the device utilizing such magnetic junction.Magnetic memory can comprise spin-transfer torque MAGNETIC RANDOM ACCESS MEMORY (STT-MRAM) and may be used for adopting in the electronic equipment of nonvolatile memory.Such electronic equipment includes, but are not limited to cell phone, smart phone, flat board, laptop computer and other portable and non-portable calculation element.Description is below presented to make those of ordinary skill in the art can manufacture and use the present invention, and provides under the background of patent application and requirement thereof.To be easy to become obvious to the various amendments of one exemplary embodiment and General Principle described herein and feature.The ad hoc approach that one exemplary embodiment mainly provides in particular implementation and system aspects are described.But the method and system will effectively be run in other is implemented.Such as the term of " one exemplary embodiment ", " embodiment " and " another embodiment " can refer to identical or different embodiment and multiple embodiment.Embodiment is described about the system and/or device with particular elements.But system and/or device can comprise the parts many or fewer than the parts illustrated, and the layout of parts and the change of type can be carried out and do not depart from the scope of the present invention.One exemplary embodiment is also described under the background of ad hoc approach with some step.But the method and system are run effectively for other method of the step with difference/additional step and the different order inconsistent with one exemplary embodiment.Therefore, the present invention is not intended to be limited to shown embodiment, but will be given the most wide region consistent with principle described herein and feature.
For providing the method and system of magnetic junction and utilizing the magnetic memory of this magnetic junction to be described.One exemplary embodiment provides a kind of method and the magnetic junction that are used to provide the magnetic junction that can be used in magnetic device.The method comprises provides free layer, nailed layer and the nonmagnetic spacer layer between free layer and nailed layer.Free layer can switch through magnetic junction at write current between stable magnetic states.At least one providing in the step of free layer comprises more than first step, provides the step of nailed layer to comprise more than second step.More than first and second step comprise the part of sedimentary deposit, deposition of sacrificial layer, annealing magnetic junction the part below sacrifice layer and deposit the remainder of this layer.This layer can be free layer, nailed layer or both.Therefore, more than first step comprise deposition free layer Part I, deposit the first sacrifice layer, the first annealing temperature being greater than 25 degrees Celsius at least the Part I of free layer and the first sacrifice layer, remove the Part II of the first sacrifice layer and deposition free layer.More than second step comprise the Part I of deposition nailed layer, depositing second sacrificial layer, the second annealing temperature being greater than 25 degrees Celsius at least nailed layer Part I and the second sacrifice layer, limit the part comprising the Part I of free layer, nonmagnetic spacer layer and nailed layer of magnetic junction, remove the Part II of the second sacrifice layer and deposition nailed layer.
One exemplary embodiment ad hoc approach, magnetic junction and have some parts magnetic memory background under be described.Those skilled in the art will readily recognize that the present invention is consistent with having other and/or the magnetic junction of extra parts and/or the further feature inconsistent with the present invention and the use of magnetic memory.The method and system also being described spin transfer phenomenon, magnetic anisotropy and other physical phenomenon under the background of feed-forward nets.Therefore, those skilled in the art will readily recognize that the theoretical explanation of the performance of the method and system is should carry out by feed-forward nets based on spin transfer, magnetic anisotropy and other physical phenomenon.But method and system described herein does not rely on specific physical interpretation.Those of ordinary skill in the art also will readily recognize that, the method and system describe under having the background of the structure of particular kind of relationship with substrate.But those of ordinary skill in the art will readily recognize that, the method is consistent with other structure with system.In addition, the method and system are described under some layer is for synthesis and/or simple background.But those of ordinary skill in the art will readily recognize that, described layer can have other structure.In addition, the method and system are described under the background of the magnetic junction and/or minor structure with certain layer.But those of ordinary skill in the art will readily recognize that, also can adopt and have and the magnetic junction of the method and the inconsistent extra and/or different layer of system and/or minor structure.And some parts is described to magnetic, ferromagnetic and ferrimagnetic.As used herein, term " magnetic " can comprise ferromagnetic, ferrimagnetic or similar structure.Therefore, as used herein, term " magnetic " or " ferromagnetic " include but not limited to ferromagnet and ferrimagnet.As used herein, " plane in " is substantially in the plane of one or more layers of magnetic junction or in parallel.On the contrary, " vertically " and " perpendicular to plane " is corresponding to the direction of one or more layers being substantially perpendicular to magnetic junction.
Fig. 2 illustrates the one exemplary embodiment of the method 100 for the manufacture of magnetic junction, and this magnetic junction can be used for magnetic device such as spin-transfer torque random access memory (STT-RAM) and therefore can be used in various electronic equipment.For the sake of simplicity, some steps can be omitted, additionally to carry out or combined.In addition, method 100 can start after having carried out forming other step of magnetic memory.
Free layer provides via step 102.Step 102 comprises the material of deposition for free layer.Free layer can be deposited in seed layer.Seed layer can be selected for various object, includes but not limited to the expectation crystal structure of free layer, the magnetic anisotropy of free layer and/or magnetic damping.Such as, free layer may be provided on the seed layer such as crystalline MgO layer of the perpendicular magnetic anisotropic promoted in free layer.If manufacture two magnetic junction, then free layer can be formed in another nonmagnetic spacer layer.This nonmagnetic spacer layer can be above-mentioned MgO seed layer.Nailed layer is formed in below such wall.
The free layer provided in a step 102 can be supposed to have the perpendicular magnetic anisotropic exceeding demagnetization energy.Therefore the magnetic moment of free layer can (comprise perpendicular to plane) outside face is stable.In addition, Polarimetric enhancement layer (PEL) may be provided in the part of free layer, or except free layer, can also provide Polarimetric enhancement layer (PEL).PEL comprises high spin-polarization material.The free layer provided in a step 102 is also configured to when write current switches between stable magnetic states through magnetic junction.Therefore, free layer can utilize spin-transfer torque to switch.The free layer provided in a step 102 is magnetic and heat-staple in operating temperature.Although step 102 comes into question under the background providing free layer, the edge of free layer can limit from the lamination be provided subsequently.
In certain embodiments, step 102 comprises extra step.In such embodiments, first the Part I of free layer is deposited.The Part I of free layer can comprise the magnetosphere comprising Co, Fe and/or B.Such as, the CoFeB layer with the B being no more than 20 atomic percentages can be deposited.In such embodiments, step 102 is also included in deposited sacrificial insert layer on the first ferromagnetic layer and makes described layer share interface.Sacrifice insert layer can comprise and to boron, there is affinity, there is low diffusivity and be the material of relatively good Lattice Matching for layer below.Such as, ferromagnetic layer below and the difference of lattice constant of sacrificing between insert layer can be less than 10.It can be thin for sacrificing insert layer.In certain embodiments, sacrificing insert layer, to be less than ten dusts thick.In the embodiment that some are such, sacrifice insert layer and can be no more than four dusts and be greater than a dust.In other embodiments, other thickness can be used.Then sacrifice insert layer and the temperature of layer below more than room temperature (such as, more than 25 degrees Celsius) are annealed.Such as, the rapid thermal annealing (RTA) of the temperature in the scope of 300-400 degree Celsius can be used in.In other embodiments, annealing can be carried out to otherwise, includes but not limited to block heating (blockheating).Annealing can also be carried out in other temperature.After anneal, sacrifice insert layer to be removed via such as plasma etching.In other embodiments, sacrificing insert layer can to include but not limited to that the other mode of ion grinding or chemical-mechanical planarization is removed.In removal step, some part of ferromagnetic layer below can be removed.Then the remainder of free layer, if had, can be deposited.Such as, the second ferromagnetic layer can be deposited on the first ferromagnetic layer of exposure.This second ferromagnetic layer can be other CoFeB.In certain embodiments, the total amount of the magnetic material provided allows free layer to have the perpendicular magnetic anisotropic exceeding demagnetization energy.Such as, can have together in terminal first and second ferromagnetic layer of step 102 and be no more than 30 dusts and the gross thickness being greater than 15 dusts.In the embodiment that some is such, gross thickness is no more than 25 dusts.Such as, gross thickness can be at least ten six dusts and be less than 20 dusts.In other embodiments, free layer can be formed to otherwise.
Nonmagnetic spacer layer is provided via step 104.In certain embodiments, crystalline MgO barrier layer can be supposed to for the magnetic junction be just formed.Step 104 can comprise the MgO that deposition forms barrier layer.In certain embodiments, step 104 can comprise and utilizes such as radio frequency (RF) sputtering sedimentation MgO.Metal M g can be deposited, then oxidized to provide the natural oxide of Mg at step 104.MgO barrier layer/nonmagnetic spacer layer also can be formed to otherwise.Discuss about step 102 as above, the edge of nonmagnetic spacer layer can be defined subsequently, such as, after the rest layers of deposited magnetic knot.The part formed that step 104 can comprise annealing magnetic junction has the crystalline MgO tunneling barrier of (100) orientation to strengthen the tunnel magneto (TMR) of magnetic junction to provide.
Nailed layer is provided via step 106.Therefore, nonmagnetic spacer layer is between nailed layer and free layer.In certain embodiments, after forming free layer in a step 102, nailed layer is formed in step 106.In other embodiments, first free layer can be formed.Nailed layer is magnetic and can that it be made to magnetize is pinned or in particular directions fixing in the period at least partially of the operation of magnetic junction.Therefore nailed layer can be heat-staple in operating temperature.The nailed layer formed in step 106 can be that simple (single) layer maybe can comprise multiple layer.Such as, the nailed layer formed in step 106 can be comprise by thin nonmagnetic layer such as Ru by magnetosphere SAF that is antiferromagnetic or ferromagnetic coupling.In such SAF, each magnetosphere also can comprise multiple layer.Nailed layer also can be other multilayer.The nailed layer formed in step 106 can have exceed to demagnetize outside face can perpendicular magnetic anisotropy energy.Therefore, nailed layer can make magnetic moment perpendicular to planar orientation.Other orientation magnetized of nailed layer is possible.In addition, notice, other layer such as PEL or coupling layer can be inserted between nailed layer and nonmagnetic spacer layer.
In certain embodiments, step 106 comprise be similar to above about step 102 describe those multiple steps.Such as, the Part I of nailed layer is first deposited.The Part I of nailed layer can comprise the magnetosphere comprising Co, Fe and/or B.Such as, can deposit CoFeB layer, it has the B being no more than 20 atomic percentages.PEL or other structure also can be deposited between nailed layer and nonmagnetic spacer layer.In such embodiments, step 106 is also included in the other sacrifice insert layer of the deposited on portions formed of nailed layer.In certain embodiments, sacrifice insert layer to be deposited directly upon on ferromagnetic layer.In other embodiments, other layer can be deposited over ferromagnetic layer and sacrifice between insert layer.Sacrifice insert layer can comprise and to boron, there is affinity, there is low diffusion and be the material of relatively good Lattice Matching for layer below.Such as, ferromagnetic layer below and the difference of lattice constant of sacrificing between insert layer can be less than 10.It can be thin for sacrificing insert layer.In certain embodiments, sacrifice insert layer to have and the above same thickness described about free layer.In other embodiments, other thickness can be used.But, sacrifice insert layer and be supposed to be that continuous print is to allow patterning discussed below.Then, sacrifice insert layer and the temperature of layer below more than room temperature are annealed.Such as, the RTA of the temperature in the scope of 300-400 degree Celsius can be used in.In other embodiments, annealing can be carried out to otherwise.After anneal, the part of magnetic junction below sacrifice insert layer is defined.Such as, the edge of magnetic junction can utilize mask and ion grinding or other mechanism for etching this layer to limit.Non magnetic insulating barrier such as aluminium oxide can be deposited the region recharged around magnetic junction.Also planarization can be carried out.Then, sacrifice layer can such as be removed via plasma etching.Other minimizing technology can also be used.In removal step, the some parts of ferromagnetic layer below can be removed.Then the remainder of nailed layer, if had, can be deposited.Such as, extra ferromagnetic layer can be deposited directly upon on the first ferromagnetic layer of exposure.Nailed layer is in the embodiment of SAF wherein, and nonmagnetic layer such as Ru can be deposited and another magnetosphere is provided on this nonmagnetic layer.In other embodiments, nailed layer can be formed to otherwise.
Fig. 3 illustrates the one exemplary embodiment of magnetic junction 200 and surrounding structure, and magnetic junction 200 can manufacture by Application way 100.In order to clear, Fig. 3 does not draw in proportion.Magnetic junction 200 may be used for also therefore may be used in various electronic equipment in magnetic device such as STT-RAM.Magnetic junction 200 comprises free layer 210, the nonmagnetic spacer layer 220 with magnetic moment 211 and has the nailed layer 230 of magnetic moment 231.Substrate 201 below is also shown, wherein can forms the device including but not limited to transistor.Bottom contact 202, top contact 208, optional seed layer 204 and optional cover layer 206 are also shown.As seen in Figure 3, nailed layer 230 is near the top (from substrate 201 farthest) of magnetic junction 200.Optional pinning layer (not shown) may be used for the magnetization (not shown) of fixing nailed layer 230.In certain embodiments, optional pinning layer can be AFM layer by the magnetization (not shown) of exchange biased interaction pinning nailed layer 230 or multilayer.But in other embodiments, optional pinning layer can be omitted and maybe can use other structure.In addition, in certain embodiments, nailed layer 230 and free layer 210 can be reversed relative to the orientation of substrate 201.Therefore, in an alternative embodiment, nailed layer 230 can than free layer 210 near substrate.
In the embodiment shown in fig. 3, demagnetize outside the face that each perpendicular magnetic anisotropic of nailed layer 230 and free layer 210 can exceed nailed layer 230 and free layer 210 energy.Therefore, the magnetic moment 211 and 231 of free layer 210 and nailed layer 230 respectively can perpendicular to plane.In other words, the stable magnetic states of free layer 231 can have at the magnetic moment of+z Fang Xiang Huo – z direction orientation.Free layer 210 and nailed layer 230 is each comprises dash line, the part of this dash line presentation layer 210 and/or 230 can be formed separately by means of the sacrifice insert layer be removed before completing magnetic junction 200.
Magnetic junction 200 is also configured to allow free layer 210 to switch between stable magnetic states when write current is through magnetic junction 200.Therefore, when write current at electric current perpendicular to when plane (CPP) direction is instantaneously driven across magnetic junction 200, free layer 210 can utilize spin-transfer torque to switch.The direction of magnetization being stored in data in magnetic junction 210 and therefore free layer 210 can be read through magnetic junction 200 by driving read current.Read current also can be instantaneously driven across magnetic junction 200 on CPP direction.Therefore, the magnetic resistance of magnetic junction 200 provides read signal.
Magnetic junction 200 and free layer 210 can have the performance of improvement owing to utilizing the manufacture of step 102 and/or 106.About specific physical mechanism, benefit is described below.But those of ordinary skill in the art will readily appreciate that, method and system described herein does not depend on specific physical interpretation.If in a step 102 utilize sacrifice insert layer formed free layer 210, then free layer 210 can be thicker, still have perpendicular to plane stable state for magnetic moment 211, improve magnetic resistance and/or less damping.If formed when not sacrificing insert layer, then to be usually no more than roughly ten two dusts thick to keep the magnetic moment perpendicular to plane for free layer.Such as, the ferromagnetic CoFeB layer that roughly ten five dusts are thick has magnetic moment in face.Although thinner free layer has the magnetic moment perpendicular to plane, magnetic resistance can be reduced.If free layer is at two MgO layers such as between MgO seed layer and MgO nonmagnetic spacer layer, then this reduction can merit attention especially.It is believed that, the reduction of tunnel magneto can be because the conflict of the degree of crystallinity of free layer and MgO layer causes.Alternatively, free layer can be formed with the permanent insert layer between two magnetospheres.Such free layer can have the gross thickness being greater than 12 dusts.Magnetosphere is still separated by permanent insert layer.Each magnetosphere is still for thick to keep the magnetic moment perpendicular to plane approximately no more than 12 dusts.Thinner magnetosphere/free layer like this can have the magnetic moment perpendicular to plane.In addition, magnetic resistance can be improved.Such as, permanent insert layer such as W can reduce the conflict of peripheral layer such as between MgO layer and the degree of crystallinity of free layer.This can allow higher magnetic resistance.But damping can be higher than what expect.Such high damping can increase switch current (switching the write current needed for state of the magnetic moment of free layer).Higher switch current is normally less desirable.Therefore, the performance of such magnetic junction can be impaired.
Contrary with such magnetic junction, magnetic junction 200 can have higher magnetic resistance owing to sacrificing the use of insert layer (not shown in Fig. 3) during manufacture.Use the crystallization of sacrificing insert layer and free layer 210 before forming nonmagnetic spacer layer 220 can be allowed with the bottom part of after annealing free layer 210.It is believed that, this can at least in part owing to sacrificing the affinity of insert layer for B and O, B and O can additionally in free layer 210.Therefore free layer 210 can be manufactured to crystal structure and the perpendicular magnetic anisotropy that larger thickness still keeps expectation simultaneously.Such as, free layer 210 is thicker than 15 dusts, but still can have the magnetic moment 231 perpendicular to plane.In certain embodiments, to be no more than 25 dusts thick for free layer 210.Such as, free layer 210 can be that at least ten six dusts are thick and to be no more than 20 dusts thick.Therefore magnetic junction 200 can have higher magnetic resistance.Removal sacrifice insert layer also can reduce the damping in free layer 210.Therefore free layer 210 can show low switch current.Little write current may be used for programming to magnetic junction.Therefore performance can be enhanced.
The manufacture of nailed layer 230 can also improve the performance of the magnetic junction 200 in magnetic device in step 106.Because 230 can limiting before whole nailed layer 230 is deposited of bottom 204,210,220 and part, is removed in this restriction step so the thinner of magnetic junction 200 is divided.Can alleviate and limit in step at this covering (shadowing) of causing due to the most contiguous magnetic junction in magnetic device.Similar benefit can realize when the remainder of the remainder such as layer 230 of restriction magnetic junction 200 and cover layer 206.Therefore, magnetic junction 200 can be located adversely do not affect manufacture closer to other magnetic junction (not shown in Fig. 3).Therefore, this manufacture can be enhanced and the memory device piled up more thick and fast is implemented.If both steps 102 and 106 all use sacrifice insert layer, then the benefit that encapsulation/both manufactures that can realize the above performance about magnetic junction and magnetic device describe.
Fig. 4 illustrates the one exemplary embodiment of magnetic junction 200' and surrounding structure, and magnetic junction 200' can manufacture by Application way 100.In order to clear, Fig. 4 does not draw in proportion.Magnetic junction 200' can be used to also therefore can be used in various electronic equipment in magnetic device such as STT-RAM.Magnetic junction 200' is similar to magnetic junction 200.Therefore, similar parts have similar mark.Magnetic junction 200' comprises with the free layer 210 with magnetic moment 211 shown in magnetic junction 200, nonmagnetic spacer layer 220 and has the similar free layer 210 with magnetic moment 211 of the nailed layer 230 of magnetic moment 231, nonmagnetic spacer layer 220 and have the nailed layer 230 of magnetic moment 231.Also illustrate to contact 202 with for the substrate 201 of magnetic junction 200, bottom, substrate 201 below that top contact 208, optional seed layer 204 and optional cover layer 206 are similar, bottom contacts 202, top contact 208, optional seed layer 204 and optional cover layer 206.
Magnetic junction 200' shown in Fig. 4 is two magnetic junction.Therefore, magnetic junction 200' also comprises extra nonmagnetic spacer layer 240 and extra nailed layer 250.Nailed layer 250 can be similar to nailed layer 230.Therefore, nailed layer 250 can have the magnetic moment 251 perpendicular to plane.In the illustrated embodiment, magnetic junction 200' is double state.Therefore, magnetic moment 231 and 251 is antiparallel.In another embodiment, magnetic moment 231 and 251 can be anti-double (antidual) or parallel state.In further embodiments, magnetic moment 231 and 251 can switch during operation between the double state of anti-double sum.Nonmagnetic spacer layer 240 is similar to nonmagnetic spacer layer 220.But nonmagnetic spacer layer 240 can have the thickness that is different from nonmagnetic spacer layer 220 and/or can be formed by the material different from nonmagnetic spacer layer 220.Such as, layer 220 and 240 both can be (100) MgO.But individual layer such as nonmagnetic spacer layer 240 can be thinner.In certain embodiments, the thickness of layer 240 can be about 30 percent of the thickness of layer 220.
Two magnetic junction 200' can share the benefit of magnetic junction 200.Therefore, magnetic junction 200' can have the magnetic resistance of improvement, the damping of minimizing and switch current, and/or can pile up more thick and fast in magnetic device.
Fig. 5 illustrates the one exemplary embodiment of the method 110 for the manufacture of a part for magnetic junction, and this magnetic junction can be used for magnetic device such as STT-RAM and therefore can be used in various electronic equipment.For the sake of simplicity, some steps can be omitted, otherwise to carry out or combined.In addition, method 110 can start after having carried out forming other step of magnetic memory.Method 110 may be used for the step 102 of carrying out method 100.But in other embodiments, method 110 may be used for another part such as nailed layer manufacturing magnetic junction 200, and/or may be used for being combined with another manufacturing process.
Method 110 can start after defining other layer such as seed layer.Such as, in one embodiment, method 110 starts deposited the crystalline MgO seed layer with (100) orientation after.If manufacture two magnetic junction, then MgO " seed " layer can be another nonmagnetic spacer layer be formed on nailed layer.In addition, PEL can be provided as the part of free layer, or except free layer, can also provide PEL.
The Part I of free layer is deposited via step 112.The Part I of free layer can comprise the magnetosphere comprising Co, Fe and/or B.Such as, the CoFeB layer with the B being no more than 20 atomic percentages can be deposited.In certain embodiments, the thickness of this ferromagnetic layer can up to 25 dusts.In certain embodiments, this ferromagnetic layer can be at least ten five dusts.But in other embodiments, other thickness and/or other layer are possible.
Sacrifice insert layer is deposited on the first ferromagnetic layer via step 114 and makes described layer share interface.Sacrifice insert layer therefore to comprise and to boron, there is affinity, there is low diffusion and be the material of relatively good Lattice Matching for CoFeB layer below.Such as, ferromagnetic layer below and the difference of lattice constant of sacrificing between insert layer can be less than 10.Sacrifice that insert layer can comprise in Bi, W, I, Zn, Nb, Ag, Cd, Hf, Os, Mo, Ca, Hg, Sc, Y, Sr, Mg, Ti, Ba, K, Na, Rb, Pb and Zr one or more.In certain embodiments, sacrifice insert layer to be made up of Bi, W, I, Zn, Nb, Ag, Cd, Hf, Os, Mo, Ca, Hg, Sc, Y, Sr, Mg, Ti, Ba, K, Na, Rb, Pb and/or Zr.It can be thin for sacrificing insert layer, such as, be less than ten dusts thick.In the embodiment that some are such, the thickness of sacrificing insert layer can be no more than four dusts and be greater than a dust.In other embodiments, other thickness can be used.
Then sacrifice insert layer and layer are below annealed via the temperature of step 116 more than room temperature.Such as, the RTA of the temperature in the scope of 300-400 degree Celsius can be used in.In other embodiments, annealing can be carried out to otherwise and/or in other temperature.The annealing of step 116 can be carried out, make CoFeB layer below with the structure expected and oriented crystalline.In addition, the excessive B in CoFeB layer and/or the excessive oxygen in ferromagnetic layer can be sacrificed insert layer absorption at During Annealing.
After anneal, sacrifice insert layer to be removed via step 118.Such as, plasma etching can be used.In other embodiments, sacrificing insert layer can to include but not limited to that the other mode of ion grinding or chemical-mechanical planarization is removed.In step 118, some part of CoFeB layer below can be removed.After step 118, the residual thickness of CoFeB can be supposed to be greater than zero but be no more than 15 dusts.In certain embodiments, the remainder of the CoFeB layer formed in step 112 can be no more than 12 dusts.In the embodiment that some are such, it is thick that CoFeB layer is no more than ten dusts after step 118.But the removal completely of CoFeB layer is less desirable.
Then the remainder of free layer, if had, can be deposited via step 120.Such as, the 2nd CoFeB ferromagnetic layer can be deposited on the first ferromagnetic layer of exposure.Therefore, the first and second magnetic (such as CoFeB) layer can share interface.Alternatively, another layer comprising multilayer can be formed.Although the total amount of the magnetic material provided, free layer has the perpendicular magnetic anisotropic exceeding demagnetization energy.The remainder of the first ferromagnetic layer has the gross thickness being greater than 15 dusts together with the second ferromagnetic layer to provide in the step 120 after step 118.The gross thickness of these two layers can be no more than 30 dusts.In the embodiment that some are such, gross thickness is no more than 25 dusts.Such as, gross thickness can be at least ten six dusts and be less than 20 dusts.In certain embodiments, to be no more than 15 dusts thick for each thickness of the first and second ferromagnetic layers.
Fig. 6 illustrates magnetic junction 200 " one exemplary embodiment, magnetic junction 200 " can manufacture by Application way 110.In order to clear, Fig. 6 does not draw in proportion.Magnetic junction 200 " may be used for also therefore can be used in various electronic equipment in magnetic device such as STT-RAM.Magnetic junction 200 " be similar to magnetic junction 200.Therefore, similar parts have similar mark.Magnetic junction 200 " comprise with the free layer 210 with magnetic moment 211 shown in magnetic junction 200, nonmagnetic spacer layer 220 and there is the similar free layer 210 with magnetic moment 211 of the nailed layer 230 of magnetic moment 231, nonmagnetic spacer layer 220 and there is the nailed layer 230' of magnetic moment 231A/231B.Optional seed layer 204 below is also shown, this optional seed layer 204 is similar to the optional seed layer 204 for magnetic junction 200.Seed layer 204 can be crystalline MgO seed layer in the illustrated embodiment.MgO seed layer 204 can improve the perpendicular magnetic anisotropic of free layer 210.
Fig. 6 also illustrates optional Fe insert layer 260 and optional PEL 270.Such as, PEL 270 can be CoFeB alloy-layer, double-deck, the semimetal layer of FeB alloy-layer, Fe/CoFeB or Haas strangle (Heusler) alloy-layer.Other high spin-polarization material can also be provided.In certain embodiments, PEL 270 is also configured to the perpendicular magnetic anisotropic improving nailed layer 230'.In addition, nailed layer 230' is SAF, comprises the ferromagnetic layer 232 and 236 be separated by nonmagnetic layer 234.Ferromagnetic layer 232 and 236 is by nonmagnetic layer 234 antiferromagnetic coupling.In certain embodiments, one or more ferromagnetic layer 232 can be multilayer.Nailed layer 230' can the step 106 of Application way 100 manufacture.Therefore, part magnetic junction 200 " can be defined before forming section nailed layer 230'.In other embodiments, layer 232,234 and 236 can limit magnetic junction 230 " edge before be deposited.
Magnetic junction 200 shown in Fig. 6 " Application way 110 formed for the step 102 of method 100.Therefore free layer 210 comprises two parts be separated by dash line.The bottom part below dash line of free layer 210 deposits in step 112.Some part of this layer can be removed in step 118.The top portion more than dash line of free layer 210 deposits in the step 120.Although dash line divides free layer 210 substantially into two, the different piece of free layer 210 can exceed or lower than this dash line.Therefore free layer 210' can be believed to comprise the single ferromagnetic layer with the thickness being greater than 15 dusts.But each several part of this ferromagnetic layer deposits in the different step of method 110.In the embodiment shown in fig. 6, free layer 210 is made up of so single ferromagnetic layer.In certain embodiments, this ferromagnetic layer comprises the CoFeB layer being no more than 20 atomic percentage B.
Because free layer 210 utilize in method 110 sacrifice insert layer formed, so free layer 210 can be thicker, still have for magnetic moment 211 perpendicular to the stable state of plane, the magnetic resistance of improvement and/or less damping.For sacrifice insert layer and the crystallinity can improving free layer 210 of annealing of step 116-118.This can allow higher magnetic resistance.Removed in step 118 before the remainder of deposition free layer 210 and sacrifice the damping that insert layer improves free layer 210.Therefore free layer 210 can be manufactured to crystal structure and the perpendicular magnetic anisotropy that larger thickness still keeps expectation simultaneously.Such as, free layer 210 to ten five dust is thick, but still can have the magnetic moment 211 perpendicular to plane.In certain embodiments, to be no more than 25 dusts thick for free layer 210.Such as, free layer 210 can be that at least ten six dusts are thick and to be no more than 20 dusts thick.Magnetic junction 200 " can therefore have higher magnetic resistance.Removal sacrifice insert layer also can reduce the damping in free layer 210.Therefore free layer 210 can show low switch current.Little write current can be used to programme to magnetic junction.Therefore performance can be enhanced.
Nailed layer 230' also can improve the magnetic junction 200 in magnetic device " performance.Particularly, first the part comprising the layer 230' of layer 210,260,220,270 and some parts of magnetic junction can be limited.The remainder of nailed layer 230' is limited subsequently.Covering (shadowing) during these limit step can be alleviated.Therefore, this manufacture can be enhanced and the memory device piled up more thick and fast is implemented.
Fig. 7 illustrates the one exemplary embodiment of the method 130 for the manufacture of a part for magnetic junction, and this magnetic junction can be used for magnetic device such as STT-RAM and therefore can be used in various electronic equipment.For the sake of simplicity, some steps can be omitted, otherwise to carry out or combined.In addition, method 130 can start after having carried out forming other step of magnetic memory.Method 130 is similar to the embodiment of the step 106 of method 100.Therefore, method 130 can start after providing free layer and nonmagnetic spacer layer.
The Part I of nailed layer is deposited via step 132.This Part I of nailed layer can be single or multiple lift.Such as, the Part I of nailed layer can comprise the magnetosphere comprising Co, Fe and/or B.Such as, the CoFeB layer with the B being no more than 20 atomic percentages can be deposited.PEL or other structure also can be deposited between nailed layer and nonmagnetic spacer layer.Can also deposit and comprise the interleaving multilayer having the ferromagnetic layer of nonmagnetic layer, such as Co/Pt multilayer.If the nailed layer formed in method 130 is SAF, then step 132 can comprise a part for deposited magnetic (many) layer; Some or all of magnetic (many) layers and nonmagnetic layer; Or a part for magnetic (many) layer, nonmagnetic layer and top magnetic (many) layer.But usually, the less part of nailed layer is deposited in step 132.This allows to limit thinner structure in step 138 below.
Sacrifice insert layer to be deposited in the part formed of nailed layer via step 134.Sacrifice insert layer can comprise and to boron, there is affinity, there is low diffusion and be the material of relatively good Lattice Matching for layer below.Such as, ferromagnetic layer below and the difference of lattice constant of sacrificing between insert layer can be less than 10.Such as, sacrifice insert layer can comprise one or more in Bi, W, I, Zn, Nb, Ag, Cd, Hf, Os, Mo, Ca, Hg, Sc, Y, Sr, Mg, Ti, Ba, K, Na, Rb, Pb and Zr.In certain embodiments, sacrifice insert layer to be made up of Bi, W, I, Zn, Nb, Ag, Cd, Hf, Os, Mo, Ca, Hg, Sc, Y, Sr, Mg, Ti, Ba, K, Na, Rb, Pb and/or Zr.It can be thin for sacrificing insert layer.But sacrifice insert layer is supposed to be that continuous print is to allow the patterning of following discussion.
Then sacrifice insert layer and layer are below annealed via step 136.Such as, the RTA of the temperature in the scope of 300-400 degree Celsius can be used in.In other embodiments, annealing can be carried out to otherwise.Therefore, the not only part that deposits in step 132 of nailed layer and sacrifice insert layer and be annealed in step 136, and the nonmagnetic spacer layer of sacrificing below insert layer can be positioned at and free layer is annealed in step 136.Therefore, temperature and other the characteristic of annealing can be supposed to enough low, and nonmagnetic spacer layer such as crystalline MgO barrier layer is not adversely affected.
After anneal, the part below sacrifice insert layer of magnetic junction is limited by photoetching via step 138.Therefore step 138 can comprise provides photoresist oxidant layer and patterning photoresist oxidant layer to provide photoresist mask.Other material also may be used for this mask.This mask cover the layer deposited by the part of forming section magnetic junction.Region around magnetic junction is exposed.The edge of magnetic junction can utilize ion grinding or other mechanism for the expose portion etching this layer to limit.Ion grinding can be implemented with the low-angle relative to the top perpendicular to sacrifice layer.
Then carry out recharging step via step 140.Therefore, non magnetic insulating barrier such as aluminium oxide can be deposited.Also planarization can be carried out to be provided for the flat surfaces of subsequent treatment.
Sacrifice insert layer can then be removed via step 142.Step 142 can be carried out via plasma etching.Also other minimizing technology can be used.In removal step, the some parts of the part below nailed layer can be removed.Then the remainder of nailed layer, if had, can be deposited via step 144.Such as, extra ferromagnetic layer can be deposited directly on the first ferromagnetic layer of exposure.Nailed layer is in the embodiment of SAF wherein, and the described layer deposited depends on the mark of the nailed layer deposited in step 132.Such as, if whole bottom ferromagnetic layer (or multilayer) is deposited in step 132, then nonmagnetic layer such as Ru and another magnetosphere can be deposited in step 144.In other embodiments, nailed layer can be formed to otherwise.
The remainder of magnetic junction can be defined via step 146.Step 146 can to carry out with being similar to the mode photoetching of step 138.But, because free layer is defined in step 138, so more low-density pattern can be used in step 146.Therefore, the top of magnetic junction can be wide not as bottom.In other embodiments, the upper part of magnetic junction can be divided into identical size or wider than the lower part of magnetic junction with the bottom of magnetic junction.In certain embodiments, the top portion of nailed layer can extend above multiple magnetic junction.
Fig. 8 illustrates and comprises magnetic junction 200 " ' the one exemplary embodiment of magnetic memory, magnetic junction 200 " ' can Application way 130 manufactured.In order to clear, Fig. 8 does not draw in proportion.Magnetic junction 200 " ' can be used to also therefore can be used in various electronic equipment in magnetic device such as STT-RAM.This magnetic junction 200 " ' be similar to magnetic junction 200,200' and/or 200 ".But, for the sake of simplicity, magnetic junction 200 " ' indivedual layers be not illustrated.
As shown in Figure 8, the magnetic junction 200 limited in step 138 " ' lower part d spaced apart
1.In step 146 limit magnetic junction 200 " ' upper part d spaced apart
2.In addition, d
1<d
2.Therefore, the photoresist mask for step 138 and 146 has different density.In other embodiments, this density can be identical, makes d
1=d
2.In further embodiments, the density of the mask used in step 146 can be greater than the density of the mask used in step 138.Therefore, in such embodiments, d
1>d
2.In further embodiments, magnetic junction 200 " ' top portion can be connected.In addition, magnetic junction 200 " ' top portion and the length-width ratio (aspect ratio) of bottom part, the area of coverage and other geometric parameter can be different.Although only illustrate three magnetic junction, the magnetic junction of number is manufactured usually together in addition.In addition, the magnetic junction of two-dimensional array is manufactured on substrate usually together.In order to clear, a line three magnetic junction are only shown.
Application way 130, can improve magnetic junction 200 " ' performance and manufacture.Magnetic junction 200 " ' lower part can first be limited.The remainder of nailed layer 230' is limited subsequently.It is thinner for being stacked in limited part in step 138 and 146.Thus, covering (shadowing) during these limit step can be alleviated.Therefore, magnetic junction 200 " ' bottom part can by more closely pile up and limit well.Magnetic junction 200 " ' upper part do not comprise free layer.Magnetic junction 200 " ' these parts between interval so unimportant.These parts can be spaced apart further.Therefore, good technology controlling and process and integrated can be realized.In addition, dividually configure magnetic junction 200 " ' these parts can allow finishing geometry for improving SNR.Therefore, this manufacture can be enhanced and the memory device piled up more thick and fast is implemented.If magnetic junction 200 " ' free layer Application way 110 manufactured, then can improving SNR further.
Fig. 9 illustrates the one exemplary embodiment of the method 150 for the manufacture of magnetic junction, and this magnetic junction can be used for magnetic device such as STT-RAM and therefore can be used in various electronic equipment.For the sake of simplicity, some steps can be omitted, to otherwise or combined.In addition, method 150 can start after having carried out forming other step of magnetic memory.Figure 10-24 illustrates the embodiment of magnetic junction during Application way 150 manufactures.Figure 10-24 does not draw in proportion.
Crystalline MgO seed layer is deposited via step 152.In certain embodiments, step 152 forms a nonmagnetic spacer layer as two magnetic junction.Therefore, nailed layer will be positioned at below crystalline MgO layer.In other embodiments, the layer deposited in step 152 can be the seed layer for bottom magnetic knot.
One CoFeB layer of free layer is deposited via step 154.This layer be similar to above in step 102 and 112 describe those.In certain embodiments, this ferromagnetic layer can be at least ten five dusts.But in other embodiments, other thickness and/or other layer are possible.Figure 10 illustrates the magnetic junction 300 after carry out step 154.Therefore, the first ferromagnetic layer 312 of MgO seed layer 302 and free layer is shown.
Sacrifice insert layer to be deposited on the first ferromagnetic layer 302 via step 156.Therefore step 156 is similar to step 114.Material and the thickness of sacrificing insert layer are therefore described above.Figure 11 illustrates the magnetic junction 300 after carry out step 156.Therefore, sacrifice insert layer 304 is shown.In certain embodiments, sacrifice the material of insert layer 304 and thickness be similar to above method 100 and 110 is described those.
Then layer 302,304 and 312 is annealed via step 158.Such as, the RTA of the temperature in the scope of 300-400 degree Celsius can be used in.Therefore the annealing of step 158 be similar to the annealing of step 116.After anneal, sacrifice insert layer 304 to be removed via step 160.Step 160 is similar to step 118.Such as, plasma etching can be used.Figure 12 illustrates the magnetic junction 300 after carry out step 160.Therefore, sacrifice insert layer 304 has been removed.The some parts of the first ferromagnetic layer 312' can be removed.Therefore slightly thinning ferromagnetic layer 312' is shown.
In certain embodiments, the remainder of free layer is deposited via step 162.Such as, the 2nd CoFeB ferromagnetic layer can be deposited on the first ferromagnetic layer 312' of exposure.Figure 13 illustrates the magnetic junction 300 after step 162.Therefore, deposited the second ferromagnetic layer 314.Layer 312' and 314 1 is used from free layer 310.
Nonmagnetic spacer layer is provided via step 164.In certain embodiments, crystalline MgO barrier layer is provided in step 164.Figure 14 illustrates the magnetic junction 300 after carry out step 164.Therefore, nonmagnetic spacer layer 320 has been manufactured.
The Part I of nailed layer is deposited via step 166.Step 166 is similar to step 132.Therefore, the single or multiple lift comprising ferromagnetic layer and/or nonmagnetic layer can be deposited.Figure 15 illustrates the magnetic junction 300 after step 166.Therefore, ferromagnetic layer 332 is shown.In the embodiment shown in Figure 15-24, the whole lower floor/multilayer of SAF nailed layer is provided in step 166.But in other embodiments, more layer or the less layer of magnetosphere 332 can deposit in step 166.
Extra sacrifice insert layer is deposited on ferromagnetic layer 332 via step 166'.Step 166' is similar to step 134.Therefore, above-described material and thickness can be used.Figure 16 illustrates the magnetic junction 300 of carrying out after step 166'.Therefore, sacrifice insert layer 306 is shown.
Layer 302,312', 314,320 and 306 are annealed via step 168.Step 168 is similar to step 136.Such as, the RTA in above-described temperature can be carried out.Therefore, temperature and other characteristic of annealing can be supposed to enough low, and nonmagnetic spacer layer such as crystalline MgO barrier layer is not adversely affected.
After anneal, the part below sacrifice insert layer of magnetic junction 300 is limited by photoetching via step 170.Step 170 is similar to step 138.Figure 17 illustrates the magnetic junction during step 170.Therefore, in sacrifice insert layer 306, mask 360 is provided.Figure 18 illustrates the magnetic junction after step 170.Therefore, the part of two magnetic junction 300 has been defined.Particularly, free layer 310, nonmagnetic layer 320 and ferromagnetic layer 332 has been defined.
Then carry out recharging step via step 172.Therefore, non magnetic insulating barrier such as aluminium oxide can be deposited and planarization.Step 172 is similar to step 140.Figure 19-20 illustrates magnetic junction during step 172 and afterwards.Therefore, shown in Figure 19ly material 308 is recharged.Figure 20 illustrates the magnetic junction 300 after completing steps 172.Therefore, the top surface recharging material 308 is flattened.
Then sacrifice layer can be removed via step 174.Step 174 is similar to step 142.Then the remainder of nailed layer, if had, can be deposited via step 176.Step 176 is similar to step 144.Figure 21 illustrates an embodiment of the magnetic junction 300 after completing steps 174.In the illustrated embodiment, whole bottom ferromagnetic layer (or multilayer) 332 is deposited in step 166.Therefore, nonmagnetic layer such as Ru and another magnetosphere can be deposited in step 176.Therefore, nonmagnetic layer such as Ru layer 334 and ferromagnetic layer 336 is shown.Notice, layer 334 and 336 extends across two knots 300.Layer 332,334 and 336 forms SAF nailed layer.
The remainder of magnetic junction can be defined via step 178.Step 178 is similar to step 146.Step 178 can be implemented by photoetching in the mode being similar to step 170.But, because free layer is defined in step 170, so the pattern of different densities may be used in step 178.Therefore, the size or wider than bottom that the top of magnetic junction can be wide, identical with bottom not as bottom.In certain embodiments, the top portion of nailed layer can extend in multiple magnetic junction.Figure 22 illustrates the embodiment of magnetic junction 300 after carrying out step 178.Therefore, nailed layer 330 is defined.In the illustrated embodiment, the top and bottom size of nailed layer 330 is identical.
Figure 23-24 illustrates the embodiment of magnetic junction 300', is not all to be deposited in step 166 in magnetic junction 300' middle level 332.Figure 23 illustrates the such embodiment after carry out step 176.Therefore, layer 333,334 and 336 is shown.Layer 333 forms the bottom ferromagnetic layer 332' of SAF nailed layer 330' together with 331.Figure 24 illustrates the magnetic junction after carry out step 178.Therefore, the top portion of magnetic junction 300' is defined.
Magnetic junction 300 and 300' can share magnetic junction 200,200', 200 " and/or 200 " ' benefit.Therefore, magnetic junction 200' can have the magnetic resistance of improvement, the damping of minimizing and switch current, and/or can pile up more thick and fast in magnetic device.
Figure 25 illustrates the one exemplary embodiment of memory 400, and memory 400 can use magnetic junction 200,200', 200 ", 200 " ', 300 and/or 300' in one or more.Magnetic memory 400 comprises read/write column selection driver 402 and 406 and wordline selects driver 404.It should be noted that other can be provided and/or different parts.The memory block of memory 400 comprises magnetic cell 410.Each magnetic cell comprises at least one magnetic junction 412 and at least one selector 414.In certain embodiments, selector 414 is transistors.Magnetic junction 412 can be magnetic junction 200 disclosed herein, 200', 200 ", 200 " ', 300 and/or 300' in one.Although each unit 410 illustrates a magnetic junction 412, in other embodiments, each unit can provide the magnetic junction 412 of other number.Thus, magnetic memory 400 can enjoy above-described benefit.Its center line 403 can be bit line or source electrode line, and line 405 can be wordline.
Describe for the memory providing the method and system of magnetic junction and utilize this magnetic junction to manufacture.The method and system one exemplary embodiment shown in basis is described, and those of ordinary skill in the art can change easily recognizing embodiment, any change is by the spirit and scope of method and system.Therefore, those of ordinary skill in the art can carry out many amendments and not deviate from the spirit and scope of claims.
This application claims the denomination of invention submitted on July 3rd, 2014 is " magnetic property improved by the absorbed layer removed in MTJ film and double patterning process (IMPROVED MAGNETICPROPERTIES BY REMOVAL OF ABSORPTION LAYER IN MTJ FILMSAND DUAL PATTERNING PROCESS) ", be transferred to the assignee of the application and temporary patent application No.62/020 incorporated herein by reference, the rights and interests of 932, and require that the denomination of invention submitted on March 18th, 2014 is " absorbed layer for strengthening coupling is removed and high TMRSTT-RAM (ABSORPTION LAYER REMOVAL FOR INCREASED COUPLINGAND HIGH TMR STT-RAM) ", be transferred to the assignee of the application and the rights and interests of temporary patent application No.61/955142 incorporated herein by reference.
Claims (20)
1., for providing a method for the magnetic junction that can be used in magnetic device on substrate, the method comprises:
There is provided free layer, described free layer can switch through described magnetic junction at write current between multiple stable magnetic states;
Nonmagnetic spacer layer is provided; And
There is provided nailed layer, described nonmagnetic spacer layer is between described nailed layer and described free layer;
At least one wherein providing in the step of described free layer comprises more than first step, and provide the step of described nailed layer to comprise more than second step, described more than first step comprises:
Deposit the Part I of described free layer;
Deposit the first sacrifice layer;
At Part I and described first sacrifice layer of at least described free layer of the first annealing temperature being greater than 25 degrees Celsius;
Remove described first sacrifice layer; And
Deposit the Part II of described free layer;
Described more than second step comprises:
Deposit the Part I of described nailed layer;
Depositing second sacrificial layer;
At Part I and described second sacrifice layer of at least described nailed layer of the second annealing temperature being greater than 25 degrees Celsius;
Limit the part comprising the Part I of described free layer, described nonmagnetic spacer layer and described nailed layer of described magnetic junction;
Remove described second sacrifice layer; And
Deposit the Part II of described nailed layer.
2. the method for claim 1, wherein provides the step of described free layer to comprise described more than first step, and wherein said free layer have be greater than to demagnetize outside face can perpendicular magnetic anisotropic energy.
3. method as claimed in claim 2, wherein said free layer has the thickness being greater than 15 dusts.
4. method as claimed in claim 3, the thickness of wherein said free layer is no more than 25 dusts.
5. method as claimed in claim 2, wherein said first sacrifice layer comprises at least one in Bi, W, I, Zn, Nb, Ag, Cd, Hf, Os, Mo, Ca, Hg, Sc, Y, Sr, Mg, Ti, Ba, K, Na, Rb, Pb and Zr.
6. method as claimed in claim 2, also comprises:
MgO seed layer was deposited before the step that described free layer is provided.
7. method as claimed in claim 2, wherein said annealing steps comprises and carries out rapid thermal annealing.
8. method as claimed in claim 2, the Part I of wherein said free layer has the first thickness, and the Part II of described free layer has the second thickness, and it is thick that described first thickness is less than 15 dusts, and it is thick that described second thickness is less than 15 dusts.
9. the method for claim 1, wherein provide the step of described nailed layer to comprise described more than second step, and wherein said method also comprises:
Before the step removing described second sacrifice layer, deposit at least one recharge material.
10. method as claimed in claim 9, also comprises:
Planarization is carried out after the described at least one of deposition recharges the step of material.
11. methods as claimed in claim 9, wherein said nailed layer is the synthetic anti-ferromagnetic layer comprising the first ferromagnetic layer, the second ferromagnetic layer and the coupling layer between described first ferromagnetic layer and described second ferromagnetic layer, and the step depositing the Part II of described nailed layer comprises:
Deposit at least described nonmagnetic layer; And
Deposit described second ferromagnetic layer.
12. methods as claimed in claim 11, the step wherein depositing the Part II of described nailed layer also comprises the part depositing described first ferromagnetic layer.
13. methods as claimed in claim 11, at least one in wherein said first ferromagnetic layer and described second ferromagnetic layer is multilayer.
14. methods as claimed in claim 11, also comprise:
Limit the remainder of described nailed layer.
15. methods as claimed in claim 9, wherein said more than second step is also included in the part limiting described magnetic junction before the described at least one of deposition recharges the step of material, and the step limiting the described part of described magnetic junction comprises:
Described second sacrifice layer provides photoresist mask, and described photoresist mask covers the part corresponding to described magnetic junction of described second sacrifice layer; And
Remove the expose portion of described second sacrifice layer, the Part I of described nailed layer, described nonmagnetic spacer layer and the described free layer exposed by described photoresist mask.
16. the method for claim 1, also comprise:
There is provided extra nonmagnetic spacer layer, described free layer is between described extra nonmagnetic spacer layer and described nonmagnetic spacer layer; And
There is provided extra nailed layer, described extra nonmagnetic spacer layer is between described extra nailed layer and described free layer.
17. 1 kinds of methods that the magnetic memory that can be used in magnetic device is provided on substrate, described method comprises:
First ferromagnetic layer of deposition free layer, the first ferromagnetic layer of described free layer comprises and is no more than the thick CoFeB layer of 15 dusts;
Described first ferromagnetic layer deposits the first sacrifice layer, and described first sacrifice layer is no more than the thick and at least one comprised in Bi, W, I, Zn, Nb, Ag, Cd, Hf, Os, Mo, Ca, Hg, Sc, Y, Sr, Mg, Ti, Ba, K, Na, Rb, Pb and Zr of four dusts;
At at least described first ferromagnetic layer of the first annealing temperature being greater than 25 degrees Celsius and described first sacrifice layer;
Remove at least described first sacrifice layer; And
The remainder of described first ferromagnetic layer deposits the second ferromagnetic layer of described free layer, described second ferromagnetic layer comprises and is no more than the thick CoFeB layer of 15 dusts, the remainder of described first ferromagnetic layer is made to have the thickness being no more than 25 dusts together with described second ferromagnetic layer, and described free layer have be greater than to demagnetize outside face can perpendicular magnetic anisotropic energy, described free layer can switch through described magnetic junction at write current between multiple stable magnetic states;
Nonmagnetic spacer layer is provided;
The Part I of deposition nailed layer, described nonmagnetic spacer layer is between described nailed layer and described free layer;
Depositing second sacrificial layer, described second sacrifice layer is no more than the thick and at least one comprised in Bi, W, I, Zn, Nb, Ag, Cd, Hf, Os, Mo, Ca, Hg, Sc, Y, Sr, Mg, Ti, Ba, K, Na, Rb, Pb and Zr of four dusts;
At the remainder of the Part I of at least described nailed layer of the second annealing temperature being greater than 25 degrees Celsius, described first ferromagnetic layer, described second ferromagnetic layer and described second sacrifice layer;
Described sacrifice layer provides photoresist mask, and described photoresist mask covers the part corresponding at least one magnetic junction of described sacrifice layer;
Described photoresist mask is utilized to limit the part comprising the Part I of described free layer, described nonmagnetic spacer layer and described nailed layer of at least one magnetic junction described;
Deposition at least one recharges material;
Planarization is carried out after the described at least one of deposition recharges the step of material;
Described second sacrifice layer is removed after described planarization;
Deposit the Part II of described nailed layer; And
After the step of the Part II of the described nailed layer of deposition, limit the remainder of at least one magnetic junction described.
18. 1 kinds can be used for the magnetic junction in magnetic device, comprising:
Free layer, described free layer can switch through described magnetic junction at write current between multiple stable magnetic states, described free layer have be greater than to demagnetize outside face can perpendicular magnetic anisotropic can and have and be greater than the thick ferromagnetic layer of 15 dusts;
Nonmagnetic spacer layer; And
Nailed layer, described nonmagnetic spacer layer is between described nailed layer and described free layer.
19. magnetic junction as claimed in claim 18, wherein said ferromagnetic layer comprises the CoFeB layer with the perpendicular magnetic anisotropic energy being greater than described the energy that demagnetizes outward.
20. magnetic junction as claimed in claim 18, wherein said nonmagnetic spacer layer is crystalline MgO barrier layer, and wherein said magnetic junction also comprises:
MgO seed layer, described ferromagnetic layer is between described MgO seed layer and described crystalline MgO barrier layer.
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| US201461955142P | 2014-03-18 | 2014-03-18 | |
| US61/955,142 | 2014-03-18 | ||
| US201462020932P | 2014-07-03 | 2014-07-03 | |
| US62/020,932 | 2014-07-03 |
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| JP (1) | JP6548415B2 (en) |
| KR (1) | KR102144660B1 (en) |
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| KR102144660B1 (en) | 2020-08-18 |
| TWI644460B (en) | 2018-12-11 |
| DE102015103968B4 (en) | 2023-07-27 |
| DE102015103968A1 (en) | 2015-09-24 |
| JP6548415B2 (en) | 2019-07-24 |
| CN104934529B (en) | 2019-03-12 |
| KR20150108793A (en) | 2015-09-30 |
| JP2015179844A (en) | 2015-10-08 |
| TW201603340A (en) | 2016-01-16 |
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