CN102832336A - Method for improving exchange bias field heat stability of ferromagnetic/antiferromagnetic dual-layer membrane by laser annealing - Google Patents
Method for improving exchange bias field heat stability of ferromagnetic/antiferromagnetic dual-layer membrane by laser annealing Download PDFInfo
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- CN102832336A CN102832336A CN2012103095663A CN201210309566A CN102832336A CN 102832336 A CN102832336 A CN 102832336A CN 2012103095663 A CN2012103095663 A CN 2012103095663A CN 201210309566 A CN201210309566 A CN 201210309566A CN 102832336 A CN102832336 A CN 102832336A
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Abstract
The invention discloses a method for improving exchange bias field heat stability of a ferromagnetic/antiferromagnetic dual-layer membrane by laser annealing. The method comprises the following steps of: 1, depositing a ferromagnetic layer and an antiferromagnetic layer on a substrate by using a PVD (Physical Vapor Deposition) method to obtain a ferromagnetic/antiferromagnetic dual-layer membrane; and 2, carrying out laser rapid annealing on the dual-layer membrane by using a continuous wave laser or pulse laser as a light source, wherein the output power is 2-10W and the scanning speed is 5-20cm/s. The method can be applied to a colossal magnetoresistance resistor sensor, a magnetic random access storage, a magnetic recording device and the like based on the ferromagnetic/antiferromagnetic dual-layer membrane, and has the advantages of simple operation and high efficiency.
Description
Technical field
The present invention relates to the method that a kind of laser annealing improves ferromagnetic/antiferromagnetic duplicature exchange bias field thermal stability, belong to magnetic electron device manufacturing technology field.
Background technology
1956, Meiklejohn and Bean in the Co/CoO duplicature, found exchange bias effect first.In recent years, succeed at aspects such as magnetoresistive read head, magnetic random memory, Magnetic Sensors based on the magnetic electron device of exchange bias effect and to use, the development of social economy and national defense construction has been produced tremendous influence.
Generally, ferromagnetic/antiferromagnetic duplicature system will obtain stable exchange bias field and must carry out the high temperature magnetic-field annealing and handle (greater than the Neel temperature of anti-ferromagnetic layer material).Yet, when carrying out the high temperature magnetic-field annealing,, thereby cause relaxing of domain wall pinning and reducing of coupled field because high temperature action can cause ferromagnetic/antiferromagnetic chemical element at the interface to spread for a long time.In recent years, there are many famous research institutions successively to carry out the high temperature rapid thermal annealing research of magnetic membrane material abroad, hope to utilize high temperature more than 400 ℃, (< 5min) heating in short-term to slow down the chemical element diffusion of magnetic thin film interlayer.Because the thermal stability of exchange bias field depends on the interfacial characteristics of material consumingly, any factor that influences interfacial characteristics all will have influence on the thermal stability of ferromagnetic/>antiferromagnetic duplicature exchange bias field.This technology causes the high temperature of substrate and cooling fast inevitably, and coefficient of thermal expansion mismatch produces certain influence to the performance of magnetic material between the stress in the resilient coating and resilient coating and substrate.
Laser short annealing technology is a new technology that has just grown up in recent years, compares with traditional annealing process, has the following advantages: (1) crystallization rate is fast, is about 1m/s, and the annealed structure architecture quality is high; (2) can realize three-dimensional localization annealing, accurate localization process is convenient in laser annealing, does not influence the performance of periphery and following square structure; (3) the annealing cycle weak point is generally 0.1 μ s ~ 10s, does not need high vacuum environment; (4) can under lower substrate temperature, anneal, the matrix distortion is little.At present, the laser short annealing successfully is applied to semicon industry, with the crystal structure of adjustment film, the diffusion of control impurity element etc.
Summary of the invention
The objective of the invention is to: provide a kind of laser short annealing to improve the thermal stability method of ferromagnetic/antiferromagnetic duplicature exchange bias field; Utilize the laser short annealing; Promptly ferromagnetic/antiferromagnetic duplicature is heated to more than the Neel temperature at short notice, the time that heat drives is shorter, and the chemical element diffusion almost has little time to take place; Suppress the dispersal behavior of ferromagnetic/antiferromagnetic chemical element at the interface, thereby improve the thermal stability of ferromagnetic/antiferromagnetic duplicature exchange bias field.
Technical solution of the present invention is that this method may further comprise the steps:
The order of (1) pressing substrate, resilient coating, magnetosphere, protective layer adopts physical vaporous deposition (PVD), makes ferromagnetic/antiferromagnetic duplicature;
(2) utilize continuous wave laser or pulse laser as light source, duplicature is carried out the laser short annealing; Wherein, when the laser short annealing, apply the plane induced magnetic field of 100 ~ 500Oe; Wherein, the technological parameter of laser short annealing is: power output 2～10W, sweep speed 5～20cm/s.
Wherein, described ferromagnetic layer is CoFe, NiFe or Co, and inverse ferric magnetosphere is IrMn or FeMn.
Wherein, the manufacture method of ferromagnetic/antiferromagnetic duplicature is: utilize high vacuum magnetic control sputtering equipment on through the monocrystalline substrate of cleaning, to deposit resilient coating, magnetosphere, protective layer, get ferromagnetic/antiferromagnetic duplicature; Wherein, resilient coating Ta thickness is 5nm, and ferromagnetic layer thickness is 5nm, and inverse ferric magnetosphere thickness is 10～15nm, and protective layer Ta thickness is 8nm; Wherein, the growth conditions of ferromagnetic/antiferromagnetic duplicature is: back of the body end vacuum 5 * 10
-6Pa; Sputtering pressure 0.3Pa; Sputtering power 30W; Argon flow amount 20sccm; The substrate temperature room temperature.
Method technology of the present invention is simple, processing ease, and effect is remarkable, can be applicable to giant magnetoresistance electric resistance sensor, magnetic RAM, magnetic recording device based on ferromagnetic/antiferromagnetic duplicature etc.
Embodiment
Further specify technical solution of the present invention below in conjunction with specific embodiment, these embodiment can not be interpreted as it is the restriction to technical scheme.
Embodiment 1:Utilize high vacuum magnetic control sputtering equipment deposit thickness on to be the IrMn inverse ferric magnetosphere of 12nm, thickness protective layer Ta for the CoFe ferromagnetic layer of 5nm, thickness for 8nm for the resilient coating Ta of 5nm, thickness through the monocrystalline substrate of cleaning; Wherein, the growth conditions of ferromagnetic/antiferromagnetic duplicature is: back of the body end vacuum 5 * 10
-6Pa; Sputtering pressure 0.3Pa; Sputtering power 30W; Argon flow amount 20sccm; The substrate temperature room temperature; Adopt continuous wave laser to carry out the laser short annealing to ferromagnetic/antiferromagnetic duplicature and handle, apply the plane induced magnetic field of 300Oe in the time of annealing along the direction that is parallel to face, the technological parameter of laser short annealing is: power output 6W, sweep speed 10cm/s.The thermal stability of the exchange bias field of the CoFe/IrMn duplicature after the laser short annealing is improved significantly.
Embodiment 2: utilize high vacuum magnetic control sputtering equipment deposit thickness on to be the IrMn inverse ferric magnetosphere of 10nm, thickness protective layer Ta for the NiFe ferromagnetic layer of 5nm, thickness for 8nm for the resilient coating Ta of 5nm, thickness through the monocrystalline substrate of cleaning; Wherein, the growth conditions of ferromagnetic/antiferromagnetic duplicature is: back of the body end vacuum 5 * 10
-6Pa; Sputtering pressure 0.3Pa; Sputtering power 30W; Argon flow amount 20sccm; The substrate temperature room temperature; Adopt pulse laser to carry out the laser short annealing to ferromagnetic/antiferromagnetic duplicature and handle, apply the plane induced magnetic field of 100Oe in the time of annealing along the direction that is parallel to face, the technological parameter of laser short annealing is: power output 2W, sweep speed 5cm/s.The thermal stability of the exchange bias field of the NiFe/IrMn duplicature after the laser short annealing is improved significantly.
Embodiment 3:Utilize high vacuum magnetic control sputtering equipment deposit thickness on to be the IrMn inverse ferric magnetosphere of 15nm, thickness protective layer Ta for the Co ferromagnetic layer of 5nm, thickness for 8nm for the resilient coating Ta of 5nm, thickness through the monocrystalline substrate of cleaning; Wherein, the growth conditions of ferromagnetic/antiferromagnetic duplicature is: back of the body end vacuum 5 * 10
-6Pa; Sputtering pressure 0.3Pa; Sputtering power 30W; Argon flow amount 20sccm; The substrate temperature room temperature; Adopting continuous wave laser to carry out the laser short annealing to ferromagnetic/antiferromagnetic duplicature handles; In annealing time, apply the plane induced magnetic field of 500Oe along the direction that is parallel to face; The technological parameter of laser short annealing is: power output 10W, sweep speed 20cm/s.The thermal stability of the exchange bias field of the Co/IrMn duplicature after the laser short annealing is improved significantly.
Embodiment 4:Utilize high vacuum magnetic control sputtering equipment deposit thickness on to be the FeMn inverse ferric magnetosphere of 12nm and thickness protective layer Ta for the CoFe ferromagnetic layer of 5nm, thickness for 8nm for the resilient coating Ta of 5nm, thickness through the monocrystalline substrate of cleaning; Wherein, the growth conditions of ferromagnetic/antiferromagnetic duplicature is: back of the body end vacuum 5 * 10
-6Pa; Sputtering pressure 0.3Pa; Sputtering power 30W; Argon flow amount 20sccm; The substrate temperature room temperature; Adopt pulse laser to carry out the laser short annealing to ferromagnetic/antiferromagnetic duplicature and handle, apply the plane induced magnetic field of 200Oe in the time of annealing along the direction that is parallel to face, the technological parameter of laser short annealing is: power output 6W, sweep speed 15cm/s.The thermal stability of the exchange bias field of the CoFe/FeMn duplicature after the laser short annealing is improved significantly.
Embodiment 5: utilize high vacuum magnetic control sputtering equipment deposit thickness on to be the FeMn inverse ferric magnetosphere of 10nm, thickness protective layer Ta for the NiFe ferromagnetic layer of 5nm, thickness for 8nm for the resilient coating Ta of 5nm, thickness through the monocrystalline substrate of cleaning; Wherein, the growth conditions of ferromagnetic/antiferromagnetic duplicature is: back of the body end vacuum 5 * 10
-6Pa; Sputtering pressure 0.3Pa; Sputtering power 30W; Argon flow amount 20sccm; The substrate temperature room temperature; Adopt pulse laser to carry out the laser short annealing to ferromagnetic/antiferromagnetic duplicature and handle, apply the plane induced magnetic field of 100Oe in the time of annealing along the direction that is parallel to face, the technological parameter of laser short annealing is: power output 2W, sweep speed 5cm/s.The thermal stability of the exchange bias field of the NiFe/FeMn duplicature after the laser short annealing is improved significantly.
Embodiment 6:Utilize high vacuum magnetic control sputtering equipment deposit thickness on to be the FeMn inverse ferric magnetosphere of 15nm, thickness protective layer Ta for the Co ferromagnetic layer of 5nm, thickness for 8nm for the resilient coating Ta of 5nm, thickness through the monocrystalline substrate of cleaning; Wherein, the growth conditions of ferromagnetic/antiferromagnetic duplicature is: back of the body end vacuum 5 * 10
-6Pa; Sputtering pressure 0.3Pa; Sputtering power 30W; Argon flow amount 20sccm; The substrate temperature room temperature; Adopting continuous wave laser to carry out the laser short annealing to ferromagnetic/antiferromagnetic duplicature handles; In annealing time, apply the plane induced magnetic field of 500Oe along the direction that is parallel to face; The technological parameter of laser short annealing is: power output 10W, sweep speed 20cm/s.The thermal stability of the exchange bias field of the Co/FeMn duplicature after the laser short annealing is improved significantly.
Said embodiment of the present invention only be for clearly demonstrate that the present invention does for example, and be not to be qualification to embodiment of the present invention.Those of ordinary skill for affiliated field; Also can on the basis of above-mentioned explanation, make other multi-form variation or change; Here need not also can't give all execution modes exhaustive, and these belong to conspicuous variation or the change that spirit of the present invention amplified out and still are in protection scope of the present invention.
Claims (3)
1. the laser short annealing improves ferromagnetic/antiferromagnetic duplicature exchange bias field thermal stability method, it is characterized in that this method may further comprise the steps:
The order of (1) pressing substrate, resilient coating, magnetosphere, protective layer adopts physical vaporous deposition (PVD), makes ferromagnetic/antiferromagnetic duplicature;
(2) utilize continuous wave laser or pulse laser as light source, ferromagnetic/antiferromagnetic duplicature is carried out the laser short annealing; Wherein, when the laser short annealing, apply the plane induced magnetic field of 100 ~ 500Oe; Wherein, the technological parameter of laser short annealing is: power output 2～10W, sweep speed 5～20cm/s.
2. laser short annealing according to claim 1 improves ferromagnetic/antiferromagnetic duplicature exchange bias field thermal stability method, and it is characterized in that: described ferromagnetic layer is CoFe, NiFe or Co, and inverse ferric magnetosphere is IrMn or FeMn.
3. laser short annealing according to claim 1 improves ferromagnetic/antiferromagnetic duplicature exchange bias field thermal stability method; The manufacture method that it is characterized in that ferromagnetic/antiferromagnetic duplicature is: utilize high vacuum magnetic control sputtering equipment on through the monocrystalline substrate of cleaning, to deposit resilient coating, magnetosphere, protective layer, get ferromagnetic/antiferromagnetic duplicature; Wherein, resilient coating Ta thickness is 5nm, and ferromagnetic layer thickness is 5nm, and inverse ferric magnetosphere thickness is 10～15nm, and protective layer Ta thickness is 8nm; Wherein, the growth conditions of ferromagnetic/antiferromagnetic duplicature is: back of the body end vacuum 5 * 10
-6Pa; Sputtering pressure 0.3Pa; Sputtering power 30W; Argon flow amount 20sccm; The substrate temperature room temperature.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112951983A (en) * | 2019-12-11 | 2021-06-11 | 浙江驰拓科技有限公司 | MTJ device |
| CN113327749A (en) * | 2021-05-07 | 2021-08-31 | 电子科技大学 | On-chip magnetic core power inductor with inductance value changing along with working current |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1258930A2 (en) * | 2001-05-15 | 2002-11-20 | Korea Institute of Science and Technology | Magnetic tunneling junction and fabrication method thereof |
| US20080308537A1 (en) * | 2003-10-23 | 2008-12-18 | International Business Machines Corporation | Method and apparatus for fast and local anneal of anti-ferromagnetic (af) exchange-biased magnetic stacks |
| CN102623132A (en) * | 2012-03-30 | 2012-08-01 | 海南大学 | Method for improving anisotropic magnetoresistance sensitivity by using surfactant |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1258930A2 (en) * | 2001-05-15 | 2002-11-20 | Korea Institute of Science and Technology | Magnetic tunneling junction and fabrication method thereof |
| US20080308537A1 (en) * | 2003-10-23 | 2008-12-18 | International Business Machines Corporation | Method and apparatus for fast and local anneal of anti-ferromagnetic (af) exchange-biased magnetic stacks |
| CN102623132A (en) * | 2012-03-30 | 2012-08-01 | 海南大学 | Method for improving anisotropic magnetoresistance sensitivity by using surfactant |
Non-Patent Citations (3)
| Title |
|---|
| M. RICKART, A. GUEDES, N FRANCO, N P BARRADAS, P DIAZ, ET. AL: "Exchange bias in ordered antiferromagnets by rapid thermal anneal without magnetic field", 《JOURNAL OF PHYSICS D: APPLIED PHYSICS》 * |
| S. GROUDEVA-ZOTOVA, D. ELEFANT, R. KALTOFEN, J. THOMAS, ET. AL: "NiMn/FeNi exchange biasing systems-magnetic and structural characteristics after short annealing close to the phase transition point of the AFM layer", 《JOURNAL OR MAGNETISM AND MAGNETIC MATERIALS》 * |
| 腾蛟，蔡建旺，熊小涛，赖武彦，朱逢吾: "NiFe/FeMn双层膜交换偏置的形成及热稳定性研究", 《物理学报》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112951983A (en) * | 2019-12-11 | 2021-06-11 | 浙江驰拓科技有限公司 | MTJ device |
| CN112951983B (en) * | 2019-12-11 | 2023-04-07 | 浙江驰拓科技有限公司 | MTJ device |
| CN113327749A (en) * | 2021-05-07 | 2021-08-31 | 电子科技大学 | On-chip magnetic core power inductor with inductance value changing along with working current |
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Application publication date: 20121219 |