CN114220803A - 一种双色led及其制作工艺 - Google Patents

一种双色led及其制作工艺 Download PDF

Info

Publication number
CN114220803A
CN114220803A CN202111623146.8A CN202111623146A CN114220803A CN 114220803 A CN114220803 A CN 114220803A CN 202111623146 A CN202111623146 A CN 202111623146A CN 114220803 A CN114220803 A CN 114220803A
Authority
CN
China
Prior art keywords
led chip
led
fluorescent
fluorescent glue
glue layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202111623146.8A
Other languages
English (en)
Inventor
刘萍萍
尹键
林德顺
王跃飞
翁平
杨永发
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hongli Zhihui Group Co Ltd
Original Assignee
Hongli Zhihui Group Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hongli Zhihui Group Co Ltd filed Critical Hongli Zhihui Group Co Ltd
Priority to CN202111623146.8A priority Critical patent/CN114220803A/zh
Publication of CN114220803A publication Critical patent/CN114220803A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502Wavelength conversion materials
    • H01L33/504Elements with two or more wavelength conversion materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/505Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/508Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0041Processes relating to semiconductor body packages relating to wavelength conversion elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

一种双色LED,包括基板、设在基板固晶区的LED芯片和围绕固晶区设置的围堰,所述LED芯片包括第一LED芯片和第二LED芯片;所述第二LED芯片的顶面出光面设有荧光粉层,所述围堰内于LED芯片的侧面设有第一荧光胶层,所述围堰内填充有第二荧光胶层,第二荧光胶层覆盖第一LED芯片、第一荧光胶和第二LED芯片顶部的荧光粉层,所述第一LED芯片与第二荧光胶层配合形成第一色温LED,所述第二LED芯片、荧光粉层及第二荧光胶层配合形成第二色温LED。本发明在第二LED芯片的顶面出光面采用喷粉方式形成荧光粉层,可以有效控制荧光粉层的厚度和范围,不会对不同色温LED产生干扰,能适用LED芯片间隔更小的高密度固晶的COB形成双色封装。

Description

一种双色LED及其制作工艺
技术领域
本发明涉及LED领域,尤其是一种双色LED及其制作工艺。
背景技术
传统双色COB一般包括基板、第一LED芯片和第二LED芯片,第一LED芯片的出光面上覆盖第一荧光胶,第二LED芯片的出光面上覆盖第二荧光胶,通过第一荧光胶与第二荧光胶的厚度不同产生冷暖色温。该种双色LED由于荧光胶层的厚度不同,导致光斑不一致,影响出光均匀性;另外,荧光胶层通过点胶工艺成型,如果相邻LED芯片之间的间隔较小,荧光胶容易碰到旁边相邻芯片,所以不适用密度集成的双色COB。
发明内容
本发明所要解决的技术问题是提供一种双色LED及其制作工艺,出光均匀性更好,能使用高密度固晶的双色COB。
为解决上述技术问题,本发明的技术方案是:一种双色LED,包括基板、设在基板固晶区的LED芯片和围绕固晶区设置的围堰,所述LED芯片包括第一LED芯片和第二LED芯片;所述第二LED芯片的顶面出光面设有荧光粉层,所述围堰内于LED芯片的侧面设有第一荧光胶层,所述围堰内填充有第二荧光胶层,第二荧光胶层覆盖第一LED芯片、第一荧光胶和第二LED芯片顶部的荧光粉层,所述第一LED芯片与第二荧光胶层配合形成第一色温LED,所述第二LED芯片、荧光粉层及第二荧光胶层配合形成第二色温LED。本发明在第二LED芯片的顶面出光面采用喷粉方式形成荧光粉层,可以有效控制荧光粉层的厚度和范围,不会对不同色温LED产生干扰,能适用LED芯片间隔更小的高密度固晶的COB形成双色封装;在第一LED芯片与第二LED芯片间隔出点第一荧光胶层,通过控制第一荧光胶的胶量和粉胶配比,可以使LED芯片的侧面出光填补两芯片顶部出光光斑之间的过渡区,整体出光更均匀。
作为改进,所述第一LED芯片和第二LED芯片均为蓝光倒装芯片。
作为改进,所述第一荧光胶层采用粉胶浓度在80-90%范围的荧光胶形成。
作为改进,所述第二荧光胶层的顶面与围堰的顶面平齐。
作为改进,所述第一荧光胶层的高度为110-130um,第一LED芯片与第二LED芯片之间的间距为0.30-0.35mm。
作为改进,所述荧光粉层的形状呈中间凸起的弧形,第一LED芯片与第二LED芯片之间的第一荧光胶层的中间下凹。
本发明双色LED的制作工艺,包括以下步骤:
(1)在基板的固晶区固晶;
(2)在第二LED芯片的顶面出光面喷粉;
(3)在基板上形成围堰包围固晶区;
(4)在第一LED芯片与第二LED芯片间隔中间位置点第一荧光胶;
(5)在围堰内填充第二荧光胶;
(6)离心沉降。
本发明与现有技术相比所带来的有益效果是:
本发明在第二LED芯片的顶面出光面采用喷粉方式形成荧光粉层,可以有效控制荧光粉层的厚度和范围,不会对不同色温LED产生干扰,能适用LED芯片间隔更小的高密度固晶的COB形成双色封装;在第一LED芯片与第二LED芯片间隔出点第一荧光胶层,通过控制第一荧光胶的胶量和粉胶配比,可以使LED芯片的侧面出光填补两芯片顶部出光光斑之间的过渡区,整体出光更均匀。
附图说明
图1为本发明封装示意图。
图2为本发明制作工艺流程图。
具体实施方式
下面结合说明书附图对本发明作进一步说明。
如图1所示,一种双色LED,包括基板3、设在基板3固晶区的LED芯片和围绕固晶区设置的围堰4。所述LED芯片包括第一LED芯片1和第二LED芯片2,所述第一LED芯片1和第二LED芯片2均为蓝光倒装芯片,第一LED芯片1和第二LED芯片2在围堰4内呈间隔错位布置,第一LED芯片1与第二LED芯片2之间的间距为0.30-0.35mm。所述第二LED芯片2的顶面出光面设有荧光粉层7,所述荧光粉层7的形状呈中间凸起的弧形,通过喷粉工艺形成。所述围堰4内于LED芯片的侧面设有第一荧光胶层5,所述第一荧光胶层5覆盖LED芯片的侧面出光面,所述第一荧光胶层5采用粉胶浓度在80-90%范围的荧光胶形成,所述第一荧光胶层5的高度为110-130um,第一LED芯片1与第二LED芯片2之间的第一荧光胶层5的中间下凹。所述围堰4内填充有第二荧光胶层6,所述第二荧光胶层6的顶面与围堰4的顶面平齐,第二荧光胶层6覆盖第一LED芯片1、第一荧光胶和第二LED芯片2顶部的荧光粉层7。所述第一LED芯片1与第二荧光胶层6配合形成第一色温LED,所述第二LED芯片2、荧光粉层7及第二荧光胶层6配合形成第二色温LED,第一色温LED发冷白色温,第二色温LED发暖白色温。
如图2所示,本发明双色LED的制作工艺,包括以下步骤:
(1)在基板3的固晶区固晶;
(2)在第二LED芯片2的顶面出光面喷粉;
(3)在基板3上形成围堰4包围固晶区;
(4)在第一LED芯片1与第二LED芯片2间隔中间位置点第一荧光胶,荧光胶的粉胶浓度控制在80-90%范围内,使用精密点胶机在两颗LED芯片间隔处点胶;
(5)在围堰4内填充第二荧光胶;
(6)离心沉降;
(7)分板、分光;
(8)包装。
本发明在第二LED芯片2的顶面出光面采用喷粉方式形成荧光粉层7,可以有效控制荧光粉层7的厚度和范围,不会对不同色温LED产生干扰,能适用LED芯片间隔更小的高密度固晶的COB形成双色封装;在第一LED芯片1与第二LED芯片2间隔出点第一荧光胶层5,通过控制第一荧光胶的胶量和粉胶配比,可以使LED芯片的侧面出光填补两芯片顶部出光光斑之间的过渡区,整体出光更均匀。

Claims (8)

1.一种双色LED,包括基板、设在基板固晶区的LED芯片和围绕固晶区设置的围堰,所述LED芯片包括第一LED芯片和第二LED芯片;其特征在于:所述第二LED芯片的顶面出光面设有荧光粉层,所述围堰内于LED芯片的侧面设有第一荧光胶层,所述围堰内填充有第二荧光胶层,第二荧光胶层覆盖第一LED芯片、第一荧光胶和第二LED芯片顶部的荧光粉层,所述第一LED芯片与第二荧光胶层配合形成第一色温LED,所述第二LED芯片、荧光粉层及第二荧光胶层配合形成第二色温LED。
2.根据权利要求1所述的一种双色LED,其特征在于:所述第一LED芯片和第二LED芯片均为蓝光倒装芯片。
3.根据权利要求1所述的一种双色LED,其特征在于:所述第一荧光胶层采用粉胶浓度在80-90%范围的荧光胶形成。
4.根据权利要求1所述的一种双色LED,其特征在于:所述第二荧光胶层的顶面与围堰的顶面平齐。
5.根据权利要求1所述的一种双色LED,其特征在于:所述第一荧光胶层的高度为110-130um,第一LED芯片与第二LED芯片之间的间距为0.30-0.35mm。
6.根据权利要求1所述的一种双色LED,其特征在于:所述荧光粉层的形状呈中间凸起的弧形,第一LED芯片与第二LED芯片之间的第一荧光胶层的中间下凹。
7.一种如权利要求1所述的双色LED的制作工艺,其特征在于,包括以下步骤:
(1)在基板的固晶区固晶;
(2)在第二LED芯片的顶面出光面喷粉;
(3)在基板上形成围堰包围固晶区;
(4)在第一LED芯片与第二LED芯片间隔中间位置点第一荧光胶;
(5)在围堰内填充第二荧光胶;
(6)离心沉降。
8.根据权利要求7所述的一种双色LED的制作工艺,其特征在于:所述步骤(4)中,荧光胶的粉胶浓度控制在80-90%范围内,使用精密点胶机在两颗LED芯片间隔处点胶。
CN202111623146.8A 2021-12-28 2021-12-28 一种双色led及其制作工艺 Pending CN114220803A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111623146.8A CN114220803A (zh) 2021-12-28 2021-12-28 一种双色led及其制作工艺

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111623146.8A CN114220803A (zh) 2021-12-28 2021-12-28 一种双色led及其制作工艺

Publications (1)

Publication Number Publication Date
CN114220803A true CN114220803A (zh) 2022-03-22

Family

ID=80706473

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111623146.8A Pending CN114220803A (zh) 2021-12-28 2021-12-28 一种双色led及其制作工艺

Country Status (1)

Country Link
CN (1) CN114220803A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114582849A (zh) * 2022-05-05 2022-06-03 宏齐光电子(深圳)有限公司 双色led制作方法及双色led

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114582849A (zh) * 2022-05-05 2022-06-03 宏齐光电子(深圳)有限公司 双色led制作方法及双色led

Similar Documents

Publication Publication Date Title
CN112490341B (zh) 一种双色cob的封装方法
US7928458B2 (en) Light-emitting diode device and method for fabricating the same
CN114220803A (zh) 一种双色led及其制作工艺
US8138509B2 (en) Light emitting device having luminescent layer with opening to exposed bond pad on light emitting die for wire bonding pad to substrate
US20120077292A1 (en) Method of manufacturing light emitting diode package
CN106410022A (zh) 一种led封装器件的制造方法及led封装器件
CN101388426B (zh) 一种发光半导体晶片和发光半导体组件的制造方法
JP2006140197A (ja) Ledの製造方法
CN102479785A (zh) 具有沉积式荧光披覆层的发光结构及其制作方法
KR100665372B1 (ko) 광 추출 효율이 높은 발광 다이오드 패키지 구조 및 이의제조방법
KR20120126060A (ko) 발광 다이오드 모듈 및 그 제조 방법
US20120193659A1 (en) Structures and substrates for mounting optical elements and methods and devices for providing the same background
KR101974348B1 (ko) 발광소자 패키지 및 그 제조방법
TWI501429B (zh) 螢光粉薄膜製作方法及相應的發光二極體封裝方法
JP2007123885A (ja) 白光ledパッケージ構造
CN114220801A (zh) 一种双色led及其制作工艺
CN104253197A (zh) 发光装置及其制造方法
CN206849843U (zh) 一种cob基板
JP2008091458A (ja) 照明素子の評価方法
CN114220802A (zh) 一种双色led及其制作工艺
JP5816479B2 (ja) 半導体発光装置の製造方法。
CN212062462U (zh) 一种led封装结构
CN210156416U (zh) 一种防漏蓝倒装led芯片、led器件
CN219696473U (zh) 一种双色cob封装结构及模具
WO2017206332A1 (zh) 一种led封装基板的制备方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination