CN114217508A - Method for processing wafer edge in photoetching-exposure process - Google Patents
Method for processing wafer edge in photoetching-exposure process Download PDFInfo
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- CN114217508A CN114217508A CN202111477825.9A CN202111477825A CN114217508A CN 114217508 A CN114217508 A CN 114217508A CN 202111477825 A CN202111477825 A CN 202111477825A CN 114217508 A CN114217508 A CN 114217508A
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- 238000000034 method Methods 0.000 title claims abstract description 40
- 238000004026 adhesive bonding Methods 0.000 claims abstract description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 19
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 238000003672 processing method Methods 0.000 claims 1
- 238000009713 electroplating Methods 0.000 abstract description 21
- 239000003292 glue Substances 0.000 abstract description 7
- 238000009792 diffusion process Methods 0.000 abstract description 3
- 239000002184 metal Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000007689 inspection Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 208000018459 dissociative disease Diseases 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
The invention discloses a method for processing the edge of a wafer in a photoetching-exposure process, which comprises the following steps: gluing, exposing and developing; the exposure step comprises edge exposure and whole-wafer exposure, and edge exposure processing is carried out along the inner edge of the wafer during the edge exposure; shading the edge exposure position by using an edge shading ring during the whole-wafer exposure, and then carrying out whole-wafer exposure on the wafer, wherein the width of the edge shading ring is greater than that of the edge exposure; and forming a circle of rubber ring at the inner edge of the wafer after the developing step is finished. The method provided by the invention can leave a circle of glue lines on the inner edge of the wafer after development, and the wafer does not have the phenomenon of electroplating solution diffusion during electroplating, thereby improving the electroplating efficiency and the electroplating quality.
Description
Technical Field
The invention relates to the technical field of semiconductor photoetching exposure processes, in particular to a method for processing the edge of a wafer in a photoetching-exposure process.
Background
With the development of technology, semiconductor packages are applied more and more widely, and the demand is increasing. How to optimize the existing packaging process and improve the packaging efficiency becomes the major competitive power of companies. In a traditional semiconductor packaging process, a photoetching process flow comprises glue coating, exposure, development and inspection, after exposure, development and inspection are carried out on a wafer coated with photoresist, the wafer is electroplated, a wafer bearing (wafer holder) is adopted to bear the wafer during electroplating, the wafer bearing is in a ring shape, a step is arranged at the position close to the inner edge of the ring shape, the step comprises an inner step close to the ring and an outer step close to the circle center, the inner step is higher than the outer step, and the outer step is in contact with the edge of the wafer. However, because the edge of the wafer has an opening (a whole-wafer exposure mode), the electroplating solution may seep through the opening at the edge during electroplating, so that a metal layer is generated around the wafer bearing after electroplating, and the problems of tightness, current loss and the like exist during next use, thereby not only reducing the electroplating efficiency and increasing the labor cost, but also seriously affecting the electroplating quality.
Disclosure of Invention
The purpose of the invention is as follows: the invention aims to provide a method for processing the edge of a wafer in the photoetching-exposure process, aiming at overcoming the defects of the prior art, a circle of glue line is left on the inner edge of the wafer after development, and the phenomenon of electroplating solution diffusion does not exist when the wafer is electroplated, so that the electroplating efficiency is improved, and the electroplating quality is improved.
The technical scheme is as follows: the invention relates to a method for processing the edge of a wafer in a photoetching-exposure process, which comprises the following steps: gluing, exposing and developing; the exposing step includes: (1) edge exposure: carrying out edge exposure treatment along the inner edge of the wafer; (2) and (3) whole-wafer exposure: shading the edge exposure position by using an edge shading ring, and then carrying out whole-wafer exposure on the wafer, wherein the width of the edge shading ring is greater than that of the edge exposure; and forming a circle of rubber ring at the inner edge of the wafer after the developing step is finished.
Further perfecting the above technical scheme, the glue coating step adopts negative photoresist, and the initial position of the edge exposure is spaced from the inner edge of the wafer by a certain width.
Further, the edge exposure processing is realized by a grating ruler fixed at an edge exposure starting position, and the width of the edge exposure corresponds to the width of the grating ruler.
Further, the initial position of the edge exposure is 1.8mm away from the inner edge of the wafer, and the width of the grating ruler is 1.2 mm.
Further, the gluing step adopts positive photoresist, and the initial position of edge exposure is the inner edge of the wafer.
Further, the edge exposure is realized by a grating ruler fixed at the edge of the wafer, and the width of the edge exposure is controlled by shielding the grating ruler. And (3) adopting positive photoresist, and the width of a glue ring formed after development = the width of the edge shielding ring-the width of edge exposure.
Furthermore, the width W2 of the edge covering ring is less than or equal to 3 mm.
Further, the width of edge covering ring is 2.6 mm.
Further, after the exposure step is finished, the wafer is dried and then developed.
Has the advantages that: compared with the prior art, the invention has the advantages that: according to the invention, in the photoetching-Exposure process, aiming at glue materials with different characteristics, a layer of Exposure and shading is added to the photoresist at the Edge of the Wafer during Exposure, namely WEE (Wafer Edge Exposure) and WEP (Wafer Edge protection) are matched with each other, through Wafer Edge protection, the Wafer forms a circle of rubber ring (without opening) at the Edge after development, the opening of an original invalid area becomes the rubber ring, the Wafer does not have an electroplating solution diffusion phenomenon during electroplating, and a metal layer cannot be generated around a Wafer bearing, so that the electroplating quality is improved, and the electroplating efficiency is improved.
Drawings
FIG. 1 is a schematic view of the wafer edge processing in a photolithography-exposure process using a positive photoresist according to the present invention;
FIG. 2 is a schematic view of the wafer edge processing in a photolithography-exposure process using a negative photoresist according to the present invention.
Detailed Description
The technical solution of the present invention is described in detail below with reference to the accompanying drawings, but the scope of the present invention is not limited to the embodiments.
Example 1: as shown in fig. 1, the method for processing the edge of the wafer in the photolithography-exposure process provided by the present invention comprises the following steps:
s1, gluing: carrying out gluing operation on the wafer by adopting positive photoresist, and finishing soft drying;
s2, edge exposure: carrying out edge exposure treatment on a rubber ring with the edge exposure width W1=1.8mm from the inner edge of the wafer, wherein the edge exposure function is realized by the conventional 5mm grating ruler, the edge exposure width is controlled by blocking the size of light of the grating ruler, and the actual edge exposure width is 1.8 mm;
s3, whole surface exposure: shading the area subjected to edge exposure treatment by using a shading ring with the width of W2=3mm, and then carrying out whole-face exposure, wherein the width of the shading ring W2 is greater than the width of the edge exposure W1, and only the area inside the shading ring can be exposed in the whole-face exposure of the step; performing Post Exposure Bake (PEB) treatment;
s4, developing: the positive photoresist can generate dissociation reaction after being exposed to enhance the solubility of the positive photoresist in a developing solution, a circle of rubber ring can be left after being developed, the width W3 of the rubber ring is = the width W2 of the edge covering ring-the width W1 of the edge exposure, and therefore, the rubber ring with the width of 1.2mm is formed in the center direction from the position 1.8mm away from the edge after being developed;
and S5, electroplating after development.
Example 2: as shown in fig. 2, the method for processing the edge of the wafer in the photolithography-exposure process provided by the present invention comprises the following steps:
s1, gluing: carrying out gluing operation on the wafer by adopting negative photoresist, and finishing soft drying;
s2, edge exposure: exposing a rubber ring with the edge exposure width of W3=1.2mm from the position W1=1.8mm away from the inner edge of the wafer, wherein the edge exposure function is realized by a customized grating ruler, for example, the rubber ring with the width of 1.2mm is formed by the grating ruler with the width of 1.2 mm;
s3, whole surface exposure: carrying out whole exposure after shading the area subjected to edge exposure treatment by using the edge shading ring, wherein the width W2 of the edge shading ring is greater than that of the edge exposure, and only the area inside the edge shading ring can be exposed in the whole exposure of the step;
s4, developing: after exposure, the negative photoresist can generate a crosslinking reaction to reduce the solubility of the negative photoresist in a developing solution, a circle of rubber ring can be left after development, and the width of the rubber ring is the edge exposure width W3, so that the rubber ring with the width of 1.2mm is formed in the direction from the position 1.8mm away from the edge to the center after development;
and S5, electroplating after development.
In the photoetching-exposure process, the edge exposure needs to use the edge shielding ring, the size of the edge shielding ring can be customized according to the product requirements, the edge treatment of most products is less than 3mm at present, and most requirements can be met by adopting 2.6 mm.
For glue materials with different characteristics, the positive photoresist is insoluble to a developing solution before exposure and becomes soluble after exposure, so that a circle of rubber ring can be left after development, and the width of the rubber ring = the width of the edge shielding ring W2-the width of edge exposure W1. The negative photoresist is opposite to the positive photoresist in characteristic, a layer of Exposure and shading are added to the photoresist at the Edge of the Wafer during Exposure, namely, Wafer Edge Exposure (WEE) and Wafer Edge Protection (WEP) are mutually matched, so that the Wafer forms a rubber ring (without an opening) at the Edge after being developed, when the Wafer is electroplated, a metal layer cannot be generated around a Wafer bearing (Wafer holder), and the electroplating efficiency is improved while the electroplating quality is improved.
As noted above, while the present invention has been shown and described with reference to certain preferred embodiments, it is not to be construed as limited thereto. Various changes in form and detail may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (9)
1. A method for processing a wafer edge in a lithography-exposure process, the lithography-exposure process comprising the steps of: gluing, exposing and developing; the method is characterized in that:
the exposing step includes: (1) edge exposure: carrying out edge exposure treatment along the inner edge of the wafer; (2) and (3) whole-wafer exposure: shading the edge exposure position by using an edge shading ring, and then carrying out whole-wafer exposure on the wafer, wherein the width of the edge shading ring is greater than that of the edge exposure;
and forming a circle of rubber ring at the inner edge of the wafer after the developing step is finished.
2. The method of claim 1, wherein the wafer edge is processed by a photolithography-exposure process comprising: the step of gluing adopts negative photoresist, and the initial position of the edge exposure is spaced from the inner edge of the wafer by a certain width.
3. The method of claim 2, wherein the wafer edge is processed by the photolithography-exposure process, comprising: the edge exposure processing is realized by a grating ruler fixed at an edge exposure initial position, and the width of the edge exposure corresponds to the width of the grating ruler.
4. The method as claimed in claim 3, wherein the wafer edge processing method comprises: the interval between the initial position of the edge exposure and the inner edge of the wafer is 1.8mm, and the width of the grating ruler is 1.2 mm.
5. The method of claim 1, wherein the wafer edge is processed by a photolithography-exposure process comprising: the coating step adopts positive photoresist, and the initial position of the edge exposure is the inner edge of the wafer.
6. The method of claim 5, wherein the wafer edge is processed by the photolithography-exposure process, comprising: the edge exposure treatment is realized by a grating ruler fixed on the inner edge of the wafer, and the width of the edge exposure is controlled by shielding the grating ruler.
7. The method of claim 4 or 6, wherein: the width W2 of the edge shielding ring is less than or equal to 3 mm.
8. The method of claim 7, wherein: the width of the edge shielding ring is 2.6 mm.
9. The method of claim 5, wherein the wafer edge is processed by the photolithography-exposure process, comprising: and after the exposure step is finished, drying the wafer and then developing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111477825.9A CN114217508A (en) | 2021-12-06 | 2021-12-06 | Method for processing wafer edge in photoetching-exposure process |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111477825.9A CN114217508A (en) | 2021-12-06 | 2021-12-06 | Method for processing wafer edge in photoetching-exposure process |
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| CN114217508A true CN114217508A (en) | 2022-03-22 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19980066153A (en) * | 1997-01-20 | 1998-10-15 | 김광호 | Semiconductor Wafer Edge Exposure System |
| JP2005045160A (en) * | 2003-07-25 | 2005-02-17 | Matsushita Electric Ind Co Ltd | Method of exposure |
| CN101201545A (en) * | 2006-12-13 | 2008-06-18 | 中芯国际集成电路制造(上海)有限公司 | Pholithography and wafer forming by the same |
| JP2011215315A (en) * | 2010-03-31 | 2011-10-27 | Sony Corp | Method for forming multi-resist pattern, method for processing functional material layer and multi-resist pattern structure |
| CN104538287A (en) * | 2014-11-24 | 2015-04-22 | 南通富士通微电子股份有限公司 | Method for forming sealing contact photoresist area of electroplating tool in semiconductor manufacture |
| CN205845913U (en) * | 2016-07-26 | 2016-12-28 | 南通富士通微电子股份有限公司 | A kind of exposure structure for crystal round fringes |
-
2021
- 2021-12-06 CN CN202111477825.9A patent/CN114217508A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19980066153A (en) * | 1997-01-20 | 1998-10-15 | 김광호 | Semiconductor Wafer Edge Exposure System |
| JP2005045160A (en) * | 2003-07-25 | 2005-02-17 | Matsushita Electric Ind Co Ltd | Method of exposure |
| CN101201545A (en) * | 2006-12-13 | 2008-06-18 | 中芯国际集成电路制造(上海)有限公司 | Pholithography and wafer forming by the same |
| JP2011215315A (en) * | 2010-03-31 | 2011-10-27 | Sony Corp | Method for forming multi-resist pattern, method for processing functional material layer and multi-resist pattern structure |
| CN104538287A (en) * | 2014-11-24 | 2015-04-22 | 南通富士通微电子股份有限公司 | Method for forming sealing contact photoresist area of electroplating tool in semiconductor manufacture |
| CN205845913U (en) * | 2016-07-26 | 2016-12-28 | 南通富士通微电子股份有限公司 | A kind of exposure structure for crystal round fringes |
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