CN110597408A - Edge sealing method of polyimide film, sensor, manufacturing process of sensor and touch screen - Google Patents
Edge sealing method of polyimide film, sensor, manufacturing process of sensor and touch screen Download PDFInfo
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- CN110597408A CN110597408A CN201910703664.7A CN201910703664A CN110597408A CN 110597408 A CN110597408 A CN 110597408A CN 201910703664 A CN201910703664 A CN 201910703664A CN 110597408 A CN110597408 A CN 110597408A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
Abstract
The invention relates to the technical field of sensor manufacturing, and particularly provides a polyimide film edge sealing method, a sensor, a manufacturing process of the sensor and a touch screen. The edge sealing method comprises the following steps: coating a layer of polyimide on the surface of the substrate, wherein the periphery of the surface of the substrate is ensured to have a region with the width W1 not to be covered by the polyimide during coating, so as to form a polyimide film; coating a layer of photoresist on the surface of the polyimide film, and enabling the coated photoresist to cover the reserved area on the surface of the substrate to form a photoresist layer, wherein the width of the area covered by the photoresist layer on the surface of the substrate is W2; carrying out exposure and development treatment on the photoresist layer to ensure that the residual photoresist layer after exposure and development covers the peripheral edge of the polyimide film, wherein the covering width is W3; numerically, W1 is not less than W2 > 0, and W3 > 0. The edge sealing method of the invention ensures that the polyimide film is not easy to fall off and is easy to take down from the substrate, thereby greatly optimizing the manufacturing process of the sensor.
Description
Technical Field
The invention belongs to the technical field of sensor manufacturing, and particularly relates to a polyimide film edge sealing method, a sensor, a manufacturing process of the sensor and a touch screen.
Background
In the manufacturing process of a flexible display or a flexible Sensor (Sensor), Polyimide (PI) is widely used because of its excellent high and low temperature resistance, electrical insulation, adhesion, radiation resistance, and dielectric resistance. Among them, transparent PI films have been greatly developed in flexible electronic and electronic devices of Organic Light Emitting Semiconductors (OLEDs) due to excellent thermal stability, good chemical resistance, and excellent mechanical properties. However, if the PI adheres well to the substrate, the PI is difficult to disassemble after the Sensor process, which makes it inconvenient to recycle the substrate, and if the PI adheres poorly to the substrate, the PI is easy to fall off after the Sensor process, which makes the product processing unsmooth and even reduces the product yield. Aiming at the effect that transparent PI is required to be free from falling off in a Sensor process and easy to disassemble after the Sensor process, a common method adopts a DBL priming process (the DBL process is to coat a layer of DBL viscous liquid (whole surface coating) on a carrier substrate in advance, and coat PI after curing), but the method has very high cost, PI is not easy to disassemble from the carrier substrate, and the Sensor is easy to damage in the disassembling process, so that the use of the method is limited. In addition, the method can be realized by adjusting the PI formula and changing the viscosity of the PI, but the method only stays in a laboratory stage and cannot be popularized and applied in the market.
Disclosure of Invention
The invention provides a polyimide film edge sealing method, aiming at the problems that polyimide is easy to fall off to cause unsmooth processing or difficult disassembly, the sensor is easy to damage in the disassembly process, a substrate is difficult to recover and the like in the conventional flexible sensor manufacturing process.
And a manufacturing process of the sensor comprising the edge sealing method of the polyimide film, the sensor and the touch screen are provided.
In order to achieve the purpose, the technical scheme of the invention is as follows:
a polyimide film edge sealing method comprises the following steps:
coating a layer of polyimide on the surface of a clean and dry substrate, wherein the polyimide can be in a solid state or a liquid state, and ensuring that an area with the width of W1 reserved on the periphery of the surface of the substrate is not covered by the polyimide during coating to form a polyimide film;
coating a layer of photoresist on the surface of the polyimide film, wherein the photoresist at least covers the periphery of the surface of the polyimide film, and enabling the coated photoresist to extend to cover a W1 area reserved on the surface of the substrate and not covered by the polyimide film, so as to form a photoresist layer, and the width of the photoresist layer covering the area of the surface of the substrate is W2;
carrying out exposure and development treatment on the photoresist layer, wherein the area of an exposure and development area of the photoresist layer is smaller than that of the polyimide film, so as to ensure that the residual photoresist film layer after exposure and development covers the peripheral edge of the polyimide film, and the covering width is W3;
wherein, in terms of value, W1 is more than or equal to W2 and more than 0, and W3 and more than 0.
Correspondingly, the sensor manufacturing process comprises the step of edge sealing the polyamide film, wherein the step of edge sealing the polyimide film is as described above, and the step of forming the patterned metal circuit on the surface of the polyimide film obtained through exposure and development.
And a sensor manufactured using the sensor manufacturing process as described above.
A touch screen comprises a polyimide film and a patterned metal circuit formed on the surface of the polyimide film, and is manufactured by the sensor manufacturing process.
The invention has the technical effects that:
compared with the prior art, according to the edge sealing method for the polyimide film, provided by the invention, the polyimide film is not easy to fall off in the process of manufacturing the patterned metal circuit on the polyimide film in a mode that the photoresist covers the periphery of the polyimide film and extends to the surface of the substrate, and meanwhile, after the patterned metal circuit is manufactured to obtain the sensor, the polyimide film is easy to take off from the surface of the substrate, so that the manufacturing process of the flexible sensor is greatly optimized, the production efficiency is improved, the product yield is improved, and meanwhile, the substrate is convenient to recycle.
According to the manufacturing process of the sensor, when the polyimide film is processed, the polyimide film is not easy to fall off in the processing process in a mode that the photoresist covers the periphery of the polyimide film and extends to the surface of the substrate, and meanwhile, only the peripheral surface area of the polyimide film is coated by the photoresist and is easy to take down from the surface of the substrate, so that the manufacturing process of the sensor is greatly optimized, the production efficiency is improved, the product yield is improved, and meanwhile, the substrate is convenient to recycle.
The sensor provided by the invention is manufactured by adopting the sensor manufacturing process, has the effects of high product yield and the like, and has a wider application range.
The touch screen provided by the invention is manufactured by adopting the sensor manufacturing process, has the characteristics of high production efficiency, high product yield and the like, and has the advantages of wider application scene and the like.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic top view of a substrate involved in the edge sealing method for a polyimide film according to the present invention;
FIG. 2 is a schematic top view illustrating a polyimide film formed by applying polyimide on a surface of a substrate according to the edge sealing method for a polyimide film provided in the present invention;
FIG. 3 is a schematic cross-sectional view taken along line A-A of the substrate after the polyimide film is formed in FIG. 2 according to the present invention;
FIG. 4 is a schematic top view illustrating a photoresist layer formed on a surface of a polyimide film and a surface of a substrate after photoresist is coated thereon according to the edge sealing method for a polyimide film of the present invention;
FIG. 5 is a schematic cross-sectional view taken along line B-B of the substrate after a photoresist layer is formed in FIG. 4 according to the present invention;
FIG. 6 is a schematic top view of a polyimide film edge sealing method after exposure and development;
FIG. 7 is a schematic cross-sectional view taken along line C-C of FIG. 6 in accordance with the present invention;
wherein, 1-a substrate; 2-a polyimide film; 3-a photoresist layer;
w1-represents the width of the region of the substrate not covered with the polyimide film after the polyimide film is formed on the surface of the substrate;
w2-represents the width of the area where the photoresist layer covers the area of the substrate not covered by the polyimide film after the photoresist layer is formed on the polyimide film and the substrate surface;
w3-represents the width of the photoresist layer that was exposed and developed to cover the polyimide film.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1 to 7, the present invention provides a method for edge sealing of a polyimide film.
Referring to fig. 1, 2 and 3, a clean and dry substrate 1 is provided, wherein the substrate 1 may be a polysilicon wafer or acryl or glass.
The surface of the substrate 1 should be flat to avoid unevenness, so as to avoid adverse effects on subsequent processing techniques and avoid non-uniform thickness of the subsequently obtained polyimide film. And then coating a layer of Polyimide (PI) solution on the surface of the substrate 1, drying to form the polyimide film 2, wherein the coated polyimide solution is used for ensuring that a region with the width of W1 is not covered on the periphery of the substrate 1, the reserved width of W1 is mainly used for forming a photoresist layer, so that the formed photoresist layer covers the surface of the polyimide film 2 and the surface of the substrate 1, positioning and fixing the polyimide film 2 through the photoresist, avoiding the polyimide film 2 from wrinkling or falling off in the processing process, and obtaining the structure shown in FIGS. 2 and 3 after coating.
In some embodiments, a solid polyimide film may be directly attached instead of the polyimide solution.
The area with the width W1 needs to be able to reserve a certain area for the photoresist to adhere to the surface of the substrate 1, i.e. the width W1 should be greater than 0, and preferably, the width W1 is 5mm to 10 mm.
Preferably, the viscosity of the polyimide is (1 to 50) gf/25mm, and the viscous polyimide has good adhesion performance on the surface of the substrate 1, and can be well paved on the surface of the substrate 1 to form the polyimide film 2 with uniform thickness and good flatness.
Preferably, the thickness of the polyimide film 2 formed by coating is (10 to 30) μm. The thickness is too thick, and more photoresist is needed for coating and covering, so that the processing cost is increased, and the disassembly difficulty is increased. The polyimide film 2 is too thin, the edge sealing effect is not obvious, and wrinkling or falling is still easy to occur.
The coating of the above polyimide may be knife coating or spin coating.
More preferably, the viscosity of the polyimide is (15 to 30) gf/25mm, and the thickness of the polyimide film 2 is (15 to 25) μm.
Referring to fig. 4 and 5, after the polyimide film 2 shown in fig. 2 and 3 is obtained, a layer of photoresist is coated on the polyimide film 2 and the reserved surface of the substrate 1, and then dried to obtain the photoresist layer 3, as shown in fig. 4 and 5. The coated photoresist should cover the periphery of the polyimide film 2, i.e. should completely cover the polyimide film 2, and simultaneously extend to cover the surface of the substrate 1, and the coverage area of the photoresist layer 3 is larger than the area of the polyimide film 2 and smaller than or equal to the area of the substrate 1.
In some embodiments, the photoresist layer 3 may cover the same area as the substrate 1. In some embodiments, a portion of the substrate 1 is uncovered, i.e., the width of the substrate 1 covered by the photoresist layer 3 can be W2 > 0, and the preferred value of W2 is (1-10) mm. In value, W1 is not less than W2 to ensure that the photoresist layer 3 covers the peripheral edge of the surface of the polyimide film 2 and partially covers the surface of the substrate 1, as shown in detail in FIGS. 4 and 5.
The coated photoresist may be a positive photoresist or a negative photoresist. The photoresist may be applied by doctor blading or spin coating. The coating thickness of the photoresist layer 3 is (0.5-4) mu m from the surface of the polyimide film 2, and in the most preferred scheme, the thickness of the photoresist layer 3 is (1-2) mu m from the surface of the polyimide film 2.
Referring to fig. 6 and 7, after the photoresist is coated to form the photoresist layer 3, the photoresist layer 3 is exposed and developed by using ultraviolet light, so that the photoresist layer 3 directly above the polyimide film 2 is removed, and a circle of photoresist layer 3 still remains on the peripheral edge of the polyimide film 2, that is, after exposure and development, the width of the photoresist layer 2 covering the polyimide film 2 is W3 on the edge above the polyimide film 2, that is, the width of the mutually overlapped region of the polyimide film 2 and the photoresist layer 2, so as to ensure the positioning and fixing of the polyimide film 2 by the photoresist layer 3, and prevent the polyimide film 2 from wrinkling or falling off in advance in the subsequent processing process. The mechanism is that a part of the residual photoresist layer 3 is attached to the surface of the substrate 1, and a part of the residual photoresist layer covers the peripheral edge of the polyimide film 2, so that the polyimide film 2 can be well fixed.
In a preferred embodiment, the exposure process is a yellow light lithography process.
Preferably, W3 is 1mm to 10mm, and this size range can realize the location and the fixed to polyimide film 2, if oversize, easily cause the waste of polyimide film 2, and simultaneously be difficult to disassemble polyimide film 2 from base plate 1 to and the sensor on polyimide film 2 is easily damaged in the disassembling process.
According to the edge sealing method for the polyimide film, the photoresist covers the periphery of the polyimide film and extends to the surface of the substrate, so that the polyimide film is not easy to fall off in the processing process and is easy to take down from the surface of the substrate, the manufacturing process of the sensor is greatly optimized, the production efficiency is improved, the product yield is improved, and the substrate is convenient to recycle.
The invention further provides a manufacturing process of the sensor, which comprises the step of edge sealing the polyimide film. Specifically, the manufacturing process of the sensor includes the step of the edge sealing method for the polyimide film, and the step of forming a patterned metal circuit on the surface of the polyimide film 2 obtained by exposure and development of the edge sealing method for the polyimide film, where the patterned metal circuit is a component of the sensor with a sensing function.
After the patterned metal circuit is formed on the surface of the polyimide film 2, the method further comprises the steps of cutting the polyimide film 2 by using laser or a cutter wheel, so that the polyimide film 2 is separated from the photoresist layer 3 and is convenient to take down from the substrate 1, and after the polyimide film is taken down, the photoresist layer 3 remained on the surface of the substrate 1 can be soaked in alkali liquor, so that the remained photoresist layer 3 is completely removed, and the substrate 1 can be recycled.
Preferably, the patterned metal line can be obtained by sputtering, printing and stamping, and the like.
In the sensor manufacturing process, the processing program efficiency of the patterned metal circuit with the sensing function on the surface of the polyimide film is improved by means of the edge sealing method of the polyimide film, the product yield is high, and the substrate is easy to recycle.
Under the manufacturing process of the sensor, the invention also obtains a flexible sensor which comprises a polyimide film and a patterned metal circuit formed on the surface of the polyimide film, and the flexible sensor is manufactured by adopting the manufacturing process of the sensor.
The invention further provides a touch screen, which comprises a polyimide film and a patterned metal circuit formed on the surface of the polyimide film, wherein the manufacturing process of the touch screen is manufactured by adopting the sensor manufacturing process.
To better explain the technical solution of the present invention, the following further description is made by way of example.
Example 1
A polyimide film edge sealing method and a sensor manufacturing process are provided, wherein the polyimide film edge sealing method relates to the technical process illustrated in figures 1-7, and specifically comprises the following steps:
(1) providing a polysilicon substrate 1 with a length × width × thickness of 550mm × 670mm × 1.1mm, wherein the surface of the polysilicon substrate 1 is flat, dry and clean, as shown in fig. 1.
(2) A layer of polyimide was spin-coated on the surface of the polycrystalline silicon substrate 1, the adhesiveness of the polyimide was 15gf/25mm, and the polyimide film 2, i.e., the polyimide film 2 having the dimensions of length × width × thickness of 530mm × 650mm × 0.025mm, was obtained by drying while ensuring that the width of the remaining W1 around the surface of the polycrystalline silicon substrate 1 was not covered with the polyimide during the coating process, as shown in fig. 2 and 3.
(3) A layer of UV type photoresist is spin-coated on the surface of the polyimide film 2 and the surface of the polysilicon substrate 1, and a photoresist layer 3 is formed, the photoresist layer 3 completely covers the surface of the polyimide film 2, and extends onto the surface of the polyimide film 2 and the surface of the polysilicon substrate 1, so that the polyimide film 2 is fixed by the photoresist layer 3, and the polyimide film 2 is prevented from moving and wrinkling, as shown in detail in fig. 3 and 4, the thickness of the formed photoresist layer 3 above the polyimide film 2 is 2 μm, and the thickness from the surface of the polysilicon substrate 1 is 27 μm, the width W2 of the photoresist layer 3 covering the polysilicon substrate 1 is 5mm, that is, the size of the photoresist layer 3 is length × width × thickness × 540mm × 660mm × 2 μm, as shown in fig. 4 and 5.
(4) The photoresist layer 3 obtained in step (3) is exposed and developed by ultraviolet light, and the size of the photoresist layer 3 exposed and developed is 520mm × 640mm × 2 μm, so that the photoresist layer 3 directly above the polyimide film 2 is removed to expose the polyimide film 2, and at this time, the width W3 of the region where the residual photoresist layer 3 and the polyimide film 2 are superimposed on each other is 5mm, as shown in fig. 6 and 7.
A sensor manufacturing process comprising the steps of:
(a) the process comprising the steps (1) to (4) above;
(b) forming a patterned metal line (not shown) on the surface of the polyimide film 2 obtained in the step (a) by printing and imprinting;
(c) cutting the surface of the polyimide film 2 along the boundary of the photoresist layer 3 by using laser light, so that the polyimide film 2 is cut into a structure with the size of 520mm × 640mm × 0.025mm, and the surface of the polysilicon substrate 1 is peeled off, thereby obtaining a sensor;
(d) immersing the polycrystalline silicon substrate 1 in a sodium hydroxide solution having a mass concentration of 10% to cause the photoresist layer 3 remaining on the surface of the polycrystalline silicon substrate 1 to fall off, and washing with water to recover the polycrystalline silicon substrate 1.
Example 2
A polyimide film edge sealing method and a sensor manufacturing process are provided, wherein the polyimide film edge sealing method relates to the technical process illustrated in figures 1-7, and specifically comprises the following steps:
(1) providing a polysilicon substrate 1 with a length × width × thickness of 550mm × 670mm × 1.1mm, wherein the surface of the polysilicon substrate 1 is flat, dry and clean, as shown in fig. 1.
(2) A layer of polyimide was spin-coated on the surface of the polycrystalline silicon substrate 1, the adhesiveness of the polyimide was 1gf/25mm, and the polyimide film 2, i.e., the polyimide film 2 having the dimensions of length × width × thickness of 540mm × 660mm × 12 μm, was obtained by drying while ensuring that the width of the remaining W1, which is 5mm, around the surface of the polycrystalline silicon substrate 1 was not covered with the polyimide during the coating process, as shown in fig. 2 and 3.
(3) A layer of UV type photoresist is spin-coated on the surface of the polyimide film 2 and the surface of the polysilicon substrate 1, and a photoresist layer 3 is formed, the photoresist layer 3 completely covers the surface of the polyimide film 2, and extends onto the surface of the polyimide film 2 and the surface of the polysilicon substrate 1, so that the polyimide film 2 is fixed by the photoresist layer 3, and the polyimide film 2 is prevented from moving and wrinkling, as shown in detail in fig. 3 and 4, the thickness of the formed photoresist layer 3 above the polyimide film 2 is 2 μm, and the thickness from the surface of the polysilicon substrate 1 is 14 μm, the width W2 of the photoresist layer 3 covering the polysilicon substrate 1 is 5mm, that is, the size of the photoresist layer 3 is 550mm × 670mm × 2 (local 14) μm, as shown in fig. 4 and 5.
(4) The photoresist layer 3 obtained in step (3) is exposed and developed by ultraviolet light, and the dimensions of the photoresist layer 3 exposed and developed are 530mm × 650mm × 2 μm in length × width × thickness, so that the photoresist layer 3 directly above the polyimide film 2 is removed to expose the polyimide film 2, and the width W3 of the region where the residual photoresist layer 3 and the polyimide film 2 overlap each other is 5mm, as shown in fig. 6 and 7.
A sensor manufacturing process comprising the steps of:
(a) the process comprising the steps (1) to (4) above;
(b) forming a patterned metal line (not shown) on the surface of the polyimide film 2 obtained in the step (a) by printing and imprinting;
(c) cutting the surface of the polyimide film 2 along the boundary of the photoresist layer 3 by using laser light so that the polyimide film 2 is cut into a structure having a size of length × width × thickness of 530mm × 650mm × 12 μm, and is peeled off from the surface of the polycrystalline silicon substrate 1, thereby obtaining a sensor;
(d) immersing the polycrystalline silicon substrate 1 in a sodium hydroxide solution having a mass concentration of 5% to cause the photoresist layer 3 remaining on the surface of the polycrystalline silicon substrate 1 to fall off, and washing with water to recover the polycrystalline silicon substrate 1.
Example 3
A polyimide film edge sealing method and a sensor manufacturing process are provided, wherein the polyimide film edge sealing method relates to the technical process illustrated in figures 1-7, and specifically comprises the following steps:
(1) providing a polysilicon substrate 1 with a length, width and thickness of 550mm, 670mm, 1.1mm, wherein the surface of the polysilicon substrate 1 is flat, dry and clean, as shown in FIG. 1.
(2) A layer of polyimide was spin-coated on the surface of the polycrystalline silicon substrate 1, the adhesiveness of the polyimide was 25gf/25mm, and the polyimide film 2, i.e., the polyimide film 2 having the dimensions of length × width × thickness of 530mm × 650mm × 25 μm, was obtained by drying while ensuring that the width of the remaining W1 around the surface of the polycrystalline silicon substrate 1 was not covered with the polyimide at the time of coating, as shown in detail in fig. 2 and 3.
(3) A layer of UV type photoresist is spin-coated on the surface of the polyimide film 2 and the surface of the polysilicon substrate 1, and a photoresist layer 3 is formed, the photoresist layer 3 completely covers the surface of the polyimide film 2, and extends onto the surface of the polyimide film 2 and the surface of the polysilicon substrate 1, so that the polyimide film 2 is fixed by the photoresist layer 3, and the polyimide film 2 is prevented from moving and wrinkling, as shown in detail in fig. 3 and 4, the thickness of the formed photoresist layer 3 is 1 μm above the polyimide film 2, and the thickness from the surface of the polysilicon substrate 1 is 2.5 μm, the width W2 of the photoresist layer 3 covering the polysilicon substrate 1 is 5mm, that is, the size of the photoresist layer 3 is 540mm × width × thickness × 660mm × 1 (local 26) μm, as shown in fig. 4 and 5.
(4) The photoresist layer 3 obtained in step (3) is exposed and developed by ultraviolet light, and the dimensions of the photoresist layer 3 exposed and developed are 520mm × 640mm × 1 μm, so that the photoresist layer 3 directly above the polyimide film 2 is removed to expose the polyimide film 2, and the width W3 of the region where the residual photoresist layer 3 and the polyimide film 2 are superimposed on each other is 5mm, as shown in fig. 6 and 7.
A sensor manufacturing process comprising the steps of:
(a) the process comprising the steps (1) to (4) above;
(b) forming a patterned metal line (not shown) on the surface of the polyimide film 2 obtained in the step (a) by printing and imprinting;
(c) cutting the surface of the polyimide film 2 along the boundary of the photoresist layer 3 by using laser light so that the polyimide film 2 is cut into a structure having a size of 520mm × 640mm × 25 μm in length × width × thickness, and is peeled off from the surface of the polycrystalline silicon substrate 1 to obtain a sensor;
(d) immersing the polycrystalline silicon substrate 1 in a sodium hydroxide solution having a mass concentration of 20% to cause the photoresist layer 3 remaining on the surface of the polycrystalline silicon substrate 1 to be peeled off, and washing with water to recover the polycrystalline silicon substrate 1.
The three examples are compared with the conventional DBL full-surface coating method in terms of cost and substrate recycling rate, and are specifically shown in table 1.
TABLE 1 statistics of the cost and substrate recycle rate data for the method of the present invention and conventional DBL full-face coating process
| Process for the preparation of a coating | Cost comparison | Substrate recycling rate |
| General of | 100％ | 0％ |
| Example 1 | 50％ | 100％ |
| Example 2 | 50％ | 100％ |
| Example 3 | 50％ | 100％ |
In table 1, the cost comparison means that the cost of the present invention is only 50% of the cost of the conventional process in production when the cost of the conventional DBL full-surface coating process is 100% as a reference, and thus it can be seen that the present invention has a significant advantage in cost and the substrate of the present invention can be recycled by 100%.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. A polyimide film edge sealing method is characterized by comprising the following steps:
coating a layer of polyimide on the surface of a clean and dry substrate, and ensuring that an area with the width of W1 reserved on the periphery of the surface of the substrate is not covered by the polyimide during coating to form a polyimide film;
coating a layer of photoresist on the surface of the polyimide film, and enabling the coated photoresist to cover a part or all of the area where W1 is reserved on the surface of the substrate to form a photoresist layer, wherein the width of the area covered by the photoresist layer to the surface of the substrate is W2;
carrying out exposure and development treatment on the photoresist layer, wherein the area of an exposure and development area of the photoresist layer is smaller than that of the polyimide film, so as to ensure that the residual photoresist film layer after exposure and development covers the peripheral edge of the polyimide film, and the covering width is W3;
wherein, in terms of value, W1 is more than or equal to W2 and more than 0, and W3 and more than 0.
2. The edge sealing method for the polyimide film according to claim 1, wherein a width W1 reserved around the surface of the substrate during coating is 5mm to 10mm, a width W2 of the photoresist layer covering the surface area of the substrate is 1mm to 10mm, in terms of value, W1 is equal to or greater than W2, and a width W3 of the residual photoresist layer covering the edges around the polyimide film is 1mm to 10 mm.
3. The edge sealing method of a polyimide film according to claim 1, wherein the polyimide film has a viscosity of (1 to 50) gf/25mm, and is formed to have a thickness of (10 to 30) μm.
4. The edge sealing method for the polyimide film according to claim 1, wherein the photoresist is a positive type photoresist or a negative type photoresist.
5. The edge sealing method for the polyimide film according to claim 1, wherein the photoresist layer above the polyimide film has a thickness of (0.5 to 4) μm.
6. The edge sealing method for the polyimide film according to claim 1, wherein the polyimide film has a viscosity of (15 to 30) gf/25mm, the thickness of the polyimide film is (15 to 25) μm, and the W3 is 5 mm.
7. The edge sealing method for a polyimide film according to claim 1, wherein the light used for the exposure and development is ultraviolet light.
8. A sensor manufacturing process comprising the step of edge sealing a polyamide film, wherein the step of edge sealing a polyimide film is as claimed in any one of claims 1 to 7, and further comprising the step of forming a patterned metal wiring on the polyimide film obtained by exposure and development.
9. A sensor manufactured using a manufacturing process comprising the sensor of claim 8.
10. A touch panel comprising a polyimide film and a patterned metal line formed on a surface of the polyimide film, wherein the touch panel is manufactured by the sensor manufacturing process according to claim 8.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114659542A (en) * | 2022-02-24 | 2022-06-24 | 森霸传感科技股份有限公司 | Thin film sensor and preparation method thereof |
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| CN114659542B (en) * | 2022-02-24 | 2023-12-05 | 森霸传感科技股份有限公司 | Thin film sensor and preparation method thereof |
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