JP2014011283A - Method for manufacturing semiconductor device and positive photosensitive adhesive composition - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of downsizing and thinning a semiconductor device and reducing a manufacturing cost, and a positive photosensitive adhesive composition.SOLUTION: A method for manufacturing a semiconductor device comprises the steps of: forming a positive photosensitive adhesive composition layer on a surface of a semiconductor wafer 1 which is provided with a plurality of chip regions and a dicing region partitioning the chip regions and in which a semiconductor element is formed in each chip region by applying and drying a positive photosensitive adhesive composition; forming an adhesive protection film 2 by exposing and developing the positive photosensitive adhesive composition layer; forming a cutting groove on the surface of the semiconductor wafer 1 from the adhesive protection film 2; sticking a protective tape to a formation surface of the adhesive protection film 2; thinning the semiconductor wafer 1 by grinding a rear surface of the semiconductor wafer 1 and dividing the semiconductor wafer 1 into semiconductor chips 5; peeling the semiconductor chip 5 from the protective tape; and bonding the semiconductor chip 5 directly to a fixed body via the adhesive protection film 2.

Description

  The present invention relates to a method for manufacturing a semiconductor device and a positive photosensitive adhesive composition.

  As a method for manufacturing a semiconductor device, a method is known in which a semiconductor chip with an adhesive layer is prepared in advance, and this is laminated and bonded to a wiring board, a semiconductor chip or the like. Conventionally, a semiconductor chip with an adhesive layer is manufactured, for example, by the following process. First, a semiconductor element is formed on the surface of a semiconductor wafer, and a surface protective film is formed thereon for the purpose of protecting the semiconductor element. Next, the back surface of the semiconductor wafer is ground and processed to a predetermined thickness, and then an adhesive film (die attach film) is attached to the entire back surface of the semiconductor wafer. Next, the semiconductor wafer is diced together with an adhesive film with a blade or the like to be separated into individual semiconductor chips. Each separated semiconductor chip is then picked up and stacked on a wiring board or the like for mounting the semiconductor chip. The adhesive film has a role of fixing between the semiconductor chip and the semiconductor chip mounting wiring board (see, for example, Patent Document 1).

  In the above manufacturing method, since the semiconductor wafer and the adhesive film are simultaneously cut, the blade is clogged, and as a result, chipping occurs at the cut portion, or chips of the adhesive film adhere to the surface of the semiconductor chip. There is a fear.

  In addition, a method called “first dicing method” has been developed (see, for example, Patent Documents 2 and 3). In this tip dicing method, a cutting groove is formed on the surface of a semiconductor wafer on which a semiconductor element and a surface protective film are formed (half-cut dicing), and then the back surface of the semiconductor wafer is ground to the cutting groove portion to obtain individual semiconductor chips. Turn into. Next, an adhesive film is attached to the separated semiconductor chip, and only this adhesive film is diced. In this method, problems such as chipping as in the above method are solved, and the thickness of the semiconductor wafer can be further reduced.

  Incidentally, in recent years, there has been an increasing demand for miniaturization and high-density mounting of semiconductor devices, and even thinner semiconductor chips with an adhesive layer are required. However, since the conventional semiconductor chip with an adhesive layer requires a surface protective film formed on the element forming surface of the semiconductor wafer and an adhesive layer formed on the back surface of the semiconductor wafer, there is a limit to the thickness reduction. is there. In particular, it is technically difficult to further reduce the thickness of the adhesive film used for forming the adhesive layer. Moreover, since an adhesive film is expensive, the semiconductor chip with an adhesive layer using the adhesive film also has a problem that the cost is high.

Japanese Patent Publication No. 7-15087 JP 2002-118081 A JP 2001-110757 A

  The present invention was made to solve the above-described problems of the prior art, and in a method for manufacturing a semiconductor device using a semiconductor chip with an adhesive layer, the semiconductor device can be further reduced in size and thickness, and the manufacturing cost can be reduced. An object of the present invention is to provide a method of manufacturing a semiconductor device that can be reduced, and a positive photosensitive adhesive composition used in such a method.

  A method for manufacturing a semiconductor device according to an aspect of the present invention includes a plurality of chip regions and a dicing region that partitions the chip regions, and a positive electrode is formed on a surface of a semiconductor wafer in which semiconductor elements are respectively formed in the plurality of chip regions. Forming a positive photosensitive adhesive composition layer by applying and drying a positive photosensitive adhesive composition, and exposing and developing the positive photosensitive adhesive composition layer to have a predetermined pattern shape Forming an adhesive protective film; forming a cutting groove on the surface of the semiconductor wafer along the dicing region from the adhesive protective film; and protecting the adhesive protective film forming surface of the semiconductor wafer. A step of affixing a tape, grinding the back surface of the semiconductor wafer to reduce the thickness of the semiconductor wafer, and a semiconductor having a plurality of the semiconductor wafers having the adhesive protective film on the surface Dividing the chip into chips, peeling the semiconductor chip from the protective tape, and bonding the peeled semiconductor chip directly to the adherend through the adhesive protective film. It is a feature.

（式中、ｍは０〜１００の整数、ｎは０〜１００の整数であり、かつｎ＋ｍ＞１である。）
で表されるアルカリに可溶なフェノール樹脂、（Ｂ）フェノール性水酸基を有する化合物に下記式（２）または（３）

で表されるナフトキノンジアジドスルホン酸ハライドをエステル化反応させて得られるナフトキノンジアジド化合物、（Ｃ）エポキシ樹脂、及び（Ｄ）溶媒を含有することを特徴としている。 A positive photosensitive adhesive composition according to another embodiment of the present invention is a positive photosensitive adhesive composition for forming a surface protective film of a semiconductor device,
(A) The following general formula (1)

(In the formula, m is an integer of 0 to 100, n is an integer of 0 to 100, and n + m> 1.)
Or (B) a compound having a phenolic hydroxyl group represented by the following formula (2) or (3):

It contains the naphthoquinone diazide compound obtained by esterifying the naphthoquinone diazide sulfonic acid halide represented by these, (C) an epoxy resin, and (D) the solvent.

  According to the present invention, in a method for manufacturing a semiconductor device using a semiconductor chip with an adhesive layer, the semiconductor device can be further reduced in size and thickness, and the manufacturing cost can be reduced.

1A and 1B are diagrams schematically illustrating a manufacturing process of a semiconductor device according to an embodiment, in which FIG. 1A is a perspective view, and FIG. FIG. 2A is a perspective view schematically illustrating a semiconductor device manufacturing process after the process illustrated in FIG. 1, and FIG. FIGS. 3A and 3B are diagrams schematically illustrating a manufacturing process of a semiconductor device after the process illustrated in FIG. 2, in which FIG. FIGS. 4A and 4B are diagrams schematically showing a semiconductor device manufacturing process after the process shown in FIG. 3, in which FIG. 5A and 5B are diagrams schematically showing a manufacturing process of the semiconductor device after the process shown in FIG. 4, in which FIG. 6A and 6B are diagrams schematically showing a manufacturing process of the semiconductor device after the process shown in FIG. 5, in which FIG. 5A is a perspective view, and FIG. FIGS. 7A and 7B are diagrams schematically illustrating a manufacturing process of the semiconductor device after the process illustrated in FIGS. 6A and 6B, wherein FIG. 8A and 8B are diagrams schematically showing a manufacturing process of the semiconductor device after the process shown in FIG. 7, in which FIG. It is sectional drawing which shows roughly an example of the semiconductor device manufactured by one Embodiment.

  Embodiments of the present invention will be described below. The description will be based on the drawings, which are provided for illustration only, and the present invention is not limited to the drawings.

  1 to 8 are diagrams showing a manufacturing process of a semiconductor device according to an embodiment of the present invention, in which (a) is a schematic perspective view and (b) is a schematic cross-sectional view. FIG. 9 is a cross-sectional view schematically showing a semiconductor device manufactured by applying one embodiment of the present invention.

  In this embodiment, first, as shown in FIG. 1, semiconductor elements are formed on the surface of a semiconductor wafer 1 made of silicon or the like. The surface of the semiconductor wafer 1 includes a plurality of chip regions Z and a dicing region Y that partitions them, and semiconductor elements are formed in each of the plurality of chip regions Z. As will be described later, the semiconductor wafer 1 is cut along the dicing region Y, and semiconductor chips each having a semiconductor element are manufactured.

  Next, as shown in FIG. 2, the positive photosensitive adhesive composition is applied to the entire surface (element forming surface) 1a of the semiconductor wafer 1 on which the semiconductor elements are formed, and dried to form positive photosensitive adhesive. The agent composition layer 2a is formed. FIG. 2 shows the semiconductor wafer 1 in the process of applying the positive photosensitive adhesive composition layer 2a, and 21 shows a coating apparatus for the positive photosensitive adhesive composition. The positive photosensitive adhesive composition layer 2a protects the semiconductor element formed in the chip region Z and functions as an adhesive when the semiconductor chip is mounted on a support member such as another semiconductor chip. . Therefore, the positive photosensitive adhesive composition includes a phenolic resin having photosensitivity that can be patterned by exposure and development, and adhesiveness that enables adhesion between the semiconductor chip and the semiconductor chip mounting support member. A resin composition is used. The positive photosensitive adhesive composition used in the present invention will be described later.

  As a method of applying the positive photosensitive adhesive composition to the surface 1a of the semiconductor wafer 1, a spin coating method, a spray coating method, an ink jet method, a screen printing method, or the like can be used. The viscosity of the positive photosensitive adhesive composition when applied to the surface 1a of the semiconductor wafer 1 depends on the application method, but the viscosity at 25 ° C. is usually 0.1 to 10 Pa · s. And it is preferable from a viewpoint of forming the layer of uniform thickness, and it is more preferable that it is 0.3-3 Pa.s. Here, the viscosity at 25 ° C. of the positive photosensitive adhesive composition is a value measured with a B-type viscometer (JIS K7117-2).

  Next, as shown in FIG. 3, after exposing the positive photosensitive adhesive composition layer 2a using a photomask (not shown), the positive photosensitive adhesive composition layer 2a is classified into the type and the like. The adhesive protective film 2 having a desired pattern shape is formed by developing with a corresponding developer. The adhesive protective film 2 is formed so that, in addition to the dicing area Y, electrode pads (not shown) formed in each chip area Z are exposed. The electrode pad is a part that is electrically connected to another semiconductor chip on which the semiconductor chip is mounted, a wiring board, or the like, and the electrode pad is exposed together with the dicing region Y.

  Examples of the developer used for developing the positive photosensitive adhesive composition layer 2a include an alkaline developer and an organic solvent. Examples of the alkaline developer include tetramethylammonium hydride (TMAH) aqueous solution. Examples of the organic solvent include N, N-dimethylformamide (DMF) and N-methyl-2-pyrrolidone (NMP). Development can be performed by bringing the exposed positive photosensitive adhesive composition layer 2a into contact with a developer. Examples of the method of bringing the positive photosensitive adhesive composition layer 2a into contact with the developer include a method of immersing in the developer, a method of spraying the developer by spraying, and the like. It is preferable to wash with pure water after contacting the developer.

  The adhesive protective film 2 is preferably cured after development by further post-exposure. By performing post-curing, generation of voids during mounting can be suppressed. In addition, a semi-cured state (B stage state) may be formed by heat treatment (for example, at 130 ° C. for 1 hour) before the semiconductor wafer cutting step.

  Next, as shown in FIG. 4, grooves (cut grooves) 3 are formed in the semiconductor wafer 1 from the element formation surface 1 a side. The groove 3 is formed by cutting the dicing region Y exposed when forming the adhesive protective film 2 with a blade 23 such as a diamond blade having a blade thickness corresponding to the width. The groove 3 is formed shallower than the thickness of the semiconductor wafer 1 and deeper than the thickness when the semiconductor chip is completed. That is, the half-cut groove 3 is formed in the semiconductor wafer 1. The groove 3 can be formed not only by the blade 23 but also by using a diamond scriber, a laser, or the like. It is also possible to use means such as reactive gas etching or reactive ion etching (RIE).

  Next, as shown in FIG. 5, a protective tape 4 is attached to the surface (element forming surface) 1 a of the semiconductor wafer 1 on which the cut grooves 3 in a half cut state are formed, with an adhesive protective film 2 interposed therebetween. The protective tape 4 protects the front surface (element forming surface) 1a of the semiconductor wafer 1 when grinding the back surface 1b of the semiconductor wafer 1 in the subsequent grinding process, and the semiconductor wafer after the semiconductor wafer 1 is separated into pieces. 1 has the role of maintaining the wafer shape. The protective tape 4 is made of, for example, a pressure sensitive or photo-curing adhesive on a tape substrate made of a thermoplastic resin such as polyvinyl chloride resin (PVC), polyethylene terephthalate resin (PET), or polyolefin resin (PO). An adhesive tape or the like provided with an adhesive layer made of an agent is used.

  The back surface 1b of the semiconductor wafer 1 to which the protective tape 4 is attached is mechanically ground using a lapping surface plate 25 or the like. The grinding is performed so as to reach the cutting groove 3 formed from the surface (element forming surface) 1a side of the semiconductor wafer 1. Thereby, the semiconductor wafer 1 is thinned and divided (divided into individual pieces) into individual semiconductor chips 5. In this singulation step, after grinding with the lapping platen 25 or the like, polishing with a polishing platen or the like and / or etching with an etching apparatus may be performed. Etching may be any of dry etching, plasma etching, and wet etching. Further, a planarization process by CMP (Chemical Mechanical Polishing) may be performed instead of the etching process. Back surface chipping can be reduced by performing polishing and / or etching or planarization after grinding.

  Next, as shown in FIG. 6, a pickup supporting sheet 6 is attached to the back surface 1 b of the semiconductor wafer 1 that has the semiconductor chip 5 separated into pieces and the wafer shape is held by the protective tape 4. Then, as shown in FIG. 7, the protective tape 4 is peeled off. The support sheet 6 has the same adhesive tape as the protective sheet 4, for example, on a tape base material made of a thermoplastic resin such as polyvinyl chloride resin (PVC), polyethylene terephthalate resin (PET), polyolefin resin (PO), A pressure-sensitive adhesive tape or the like provided with a pressure-sensitive adhesive layer made of a pressure-sensitive adhesive or a photocurable adhesive is used.

  Thereafter, as shown in FIG. 8, the semiconductor chip 5 is picked up from the support sheet 6 by a pickup device provided with an adsorption collet 27. The semiconductor chip 5 picked up from the support sheet 6 is transported to the mounting process and mounted on a support member 7 such as a wiring board or another semiconductor chip as shown in FIG. Examples of the support member 7 on which the semiconductor chip 5 is mounted include a lead frame such as a 42 alloy lead frame and a copper lead frame in addition to a wiring board and other semiconductor chips.

  As shown in FIG. 9, the support member 7 on which the semiconductor chip 5 is mounted is previously provided with an adhesive layer 8 at a position where the semiconductor chip 5 is mounted. The adhesive layer 8 is formed by applying an adhesive or attaching an adhesive film. The semiconductor chip 5 is mounted on and bonded to the support member 7 through the adhesive layer 8. When the adhesive layer 8 is made of a thermosetting resin, the semiconductor chip 5 and the supporting member 7 are bonded to each other by heating the adhesive layer 8 to a predetermined temperature and adhering the semiconductor chip 5 with the adsorption collet 27. This is done by pressing 8.

  In the example of FIG. 9, the second semiconductor chip 5B is further mounted on the semiconductor chip 5 (hereinafter referred to as the first semiconductor chip 5A) mounted and bonded on the support member as described above. The second semiconductor chip 5B is manufactured through the same process as the first semiconductor chip 5A, and the adhesive protective film 2 is formed on the element forming surface of the semiconductor wafer 1. Similar to the first semiconductor chip 5A, the pickup device provided with the suction collet 27 is picked up from the support film 6 supporting the second semiconductor chip 5B and mounted on the first semiconductor chip 5A. Adhesion between the first semiconductor chip 5A and the second semiconductor chip 5B is performed by the adhesive protective film 2 formed on the surface of the first semiconductor chip 5A. That is, the second semiconductor chip 5B is pressed against the adhesive protective film 2 of the second semiconductor chip 5B by the suction collet 27 while heating the adhesive protective film 2 on the surface of the first semiconductor chip 5A to a predetermined temperature. Is done.

  An adhesive layer 8 for bonding the support member 7 and the first semiconductor chip 5A, an adhesive protective film 2 for bonding the first semiconductor chip 5A and the second semiconductor chip 5B, and a second semiconductor chip The adhesive protective film 2 formed on the surface of 5B is then heat-treated and thermally cured. Thereby, it becomes a cured film excellent in the protective effect with respect to a semiconductor element.

  Prior to the step of mounting the second semiconductor chip 5B on the first semiconductor chip 5A, the adhesive protective film 2 of the first semiconductor chip 5A is irradiated with light such as ultraviolet rays to thereby sensitize the adhesive protective film 2. It is preferable to eliminate the property as much as possible. Thereby, mounting defects (such as generation of minute voids) derived from the photosensitive component can be suppressed. In addition, the volatile component remaining in the adhesive protective film 2 of the first semiconductor chip 5A when the second semiconductor chip 5B is mounted is preferably 100 ppm or less, and more preferably 50 ppm or less. preferable. Thus, the adhesive reliability between 1st and 2nd semiconductor chips 5A and 5B is improved by making the residual amount of the volatile component in the adhesive protective film 2 of 1st semiconductor chip 5A into 100 ppm or less. Can do.

  The bonding process of the semiconductor chip can be repeated according to the number of stacked semiconductor chips. That is, in the example of FIG. 9, two semiconductor chips 5 are stacked by repeating the semiconductor chip pickup process and the semiconductor chip bonding process twice, but the semiconductor chip pickup process and the semiconductor chip bonding process are performed. By repeating the above three times or more, three or more semiconductor chips can be stacked. The heat treatment for thermosetting the adhesive protective film of each semiconductor wafer is preferably performed after the necessary number of semiconductor chips are stacked. Although not shown in the drawing, the semiconductor device is manufactured by electrically connecting the laminated semiconductor wafers to the support member by wire bonding or the like and sealing them with a sealing resin.

  Next, a positive photosensitive adhesive composition suitable for the method for manufacturing a semiconductor device of this embodiment will be described.

（式中、ｍは０〜１００の整数、ｎは０〜１００の整数であり、かつｎ＋ｍ＞１である。）
で表されるアルカリに可溶なフェノール樹脂、（Ｂ）フェノール性水酸基を有する化合物に下記式（２）または（３）

で表されるナフトキノンジアジドスルホン酸ハライドをエステル化反応させて得られるナフトキノンジアジド化合物、（Ｃ）エポキシ樹脂、及び（Ｄ）溶媒を含有するものである。 A positive photosensitive adhesive composition suitable for this embodiment is (A) the following general formula (1).

(In the formula, m is an integer of 0 to 100, n is an integer of 0 to 100, and n + m> 1.)
Or (B) a compound having a phenolic hydroxyl group represented by the following formula (2) or (3):

It contains a naphthoquinone diazide compound obtained by esterifying the naphthoquinone diazide sulfonic acid halide represented by formula (C), an epoxy resin, and (D) a solvent.

  As the alkali-soluble phenol resin represented by the general formula (1) of the component (A), those having a weight average molecular weight of about 1000 to 30000 are preferably used. More preferably, those having a weight average molecular weight of 2000 to 25000 are used, and still more preferably those having a weight average molecular weight of 2000 to 25000 are used.

  As the compound having a phenolic hydroxyl group of the naphthoquinone diazide compound as component (B), 2,2-bis (4-hydroxyphenyl) propane, bis (4-hydroxyphenyl) methane, 2,2-bis (4-hydroxyphenyl) ) Hexafluoropropane, bis (4-hydroxyphenyl) sulfone, 1,1,1-tris (4-hydroxyphenyl) ethane, 4,4 ′, 4 ″ -trihydroxytriphenylmethane, α, α, α′- And tris (4-hydroxyphenyl) -1-ethyl-4-isopropylbenzene, etc. The compound represented by the above formula (2) to be esterified with such a compound is 1,2-naphthoquinone- 2-diazide-5-sulfonic acid halide, the compound represented by the above formula (3) is 1,2-naphthoquinone-2 Diazide is a 4-sulfonic acid halide.

  The (B) component naphthoquinonediazide compound itself is a compound that is hardly soluble in an alkaline solution. It becomes melted.

  The blending amount of the naphthoquinone diazide compound as the component (B) in the positive photosensitive adhesive composition is usually 5 to 50 parts by weight, preferably 100 parts by weight of the alkali resin soluble in the component (A). Is 15 to 35 parts by mass. By setting the blending amount of the component (B) in the above range, the patterning property of the positive photosensitive adhesive composition layer becomes good.

  (C) As an epoxy resin of a component, if it has 2 or more epoxy groups in 1 molecule, it can be especially used without a restriction | limiting. Specifically, phenol novolac type epoxy resins, cresol novolac type epoxy resins and other novolak type epoxy resins, bisphenol A type, bisphenol F type, bisphenol S type, bisphenol AD type and other epoxy resins and their water additives, glycidyl Examples include ester type epoxy resins, glycidyl amine type epoxy resins, biphenyl type epoxy resins, alicyclic epoxy resins, heterocyclic type epoxy resins having a heterocyclic ring such as a naphthalene ring, and the like. These may be used alone or in combination of two or more.

  The compounding amount of the epoxy resin as the component (C) in the positive photosensitive adhesive composition is usually 1 to 30 parts by mass, preferably 100 parts by mass with respect to 100 parts by mass of the alkali resin as the component (A), preferably 5 to 15 parts by mass. By setting the blending amount of component (C) within the above range, both photosensitivity and adhesive properties can be exhibited.

  The solvent of component (D) dissolves the above components (A) to (C). For example, N-methyl-2-pyrrolidone, N, N-dimethylacetamide, N, N-dimethylformamide, dimethyl sulfoxide Γ-butyrolactone, cyclohexanone, cyclopentanone, diethylene glycol diethyl ether, diethylene glycol dibutyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, methyl lactate, ethyl lactate, butyl lactate, methyl methoxypropionate and the like. These may be used alone or in combination of two or more.

  The compounding amount of the solvent of component (D) in the positive photosensitive adhesive composition varies depending on the method of forming the positive photosensitive adhesive composition layer, etc., but in general, a B type viscometer (JIS K7117-2) ) Is preferably such that the viscosity at 25 ° C. is 0.1 to 10 Pa · s, more preferably 0.3 to 3 Pa · s.

  In addition to the above components, the positive photosensitive adhesive composition may contain a coupling agent such as a silane coupling agent or a titanium coupling agent mainly for the purpose of improving adhesiveness. Moreover, you may mix | blend thermosetting resins other than the said epoxy resin suitably. When these thermosetting resins are blended, additives such as a curing agent, a curing accelerator, and a catalyst can be added as appropriate in order to cure them. Further, the inorganic filler may be appropriately blended as long as it is non-conductive.

The positive photosensitive adhesive composition preferably has a dimensional change rate of 10% or less after heating and developing the positive photosensitive adhesive composition layer at 100 ° C. for 15 minutes. Here, the dimensional change rate is obtained by applying a positive photosensitive adhesive composition to a semiconductor wafer, exposing and developing to form a 100 μm square pattern, and heating and curing the pattern (100 ° C., 15 minutes), The pattern dimensions before and after the measurement were measured using a laser microscope manufactured by Keyence Corporation, and were calculated from the following formula.
Dimensional change rate (%)
= {(Length after heat-curing-length before heat-curing) / length before heat-curing} × 100

  When the positive photosensitive adhesive composition layer 2a shown in FIG. 2 is formed using such a positive photosensitive adhesive composition, the positive photosensitive adhesive composition is applied to the surface of the semiconductor wafer 1 ( The element forming surface 1a is applied by spin coating, spray coating, ink jet, screen printing or the like, and is usually heated at 80 to 150 ° C., preferably 100 to 130 ° C. and dried. Drying can be performed using a hot plate, an oven, or the like. Further, the positive photosensitive adhesive composition layer 2a thus formed is irradiated with actinic rays such as i-line (wavelength 365 nm), g-line (wavelength 436 nm) through a photomask, and a developer is applied. Using this method, after dissolving and developing only the irradiated part of the actinic ray, washing with pure water, and further drying by a spin dry method or the like, a patterned adhesive protection as shown in FIG. The film 2 can be formed.

  Examples of the developer include quaternary ammonium salts such as tetramethylammonium hydroxide and tetraethylammonium hydroxide; amine-based alkaline aqueous solutions such as ethylamine, n-propylamine and choline; sodium hydroxide, potassium hydroxide and sodium carbonate. An inorganic alkali-containing aqueous solution or the like is used. These may be used individually by 1 type, and may mix and use 2 or more types. After adhesion, a cured film excellent in heat resistance, chemical resistance, electrical insulation and the like can be formed by performing heat treatment at 100 to 150 ° C. on the patterned adhesive protective film 2.

  Here, the relationship between the exposure / development process of the positive photosensitive adhesive composition layer and the heat treatment process of the adhesive protective film and each component of the positive photosensitive adhesive composition will be described.

  By irradiating the positive photosensitive adhesive composition layer with actinic rays, the (B) component naphthoquinonediazide compound is changed into a structure capable of alkali development. Next, by development with an alkaline aqueous solution (developer), in the exposed area, the phenol group in the alkali-soluble phenol resin of component (A) is dissolved by the alkaline aqueous solution (developer), and at the same time component (B) The naphthoquinonediazide compound promotes dissolution. On the other hand, the unexposed part is an azo coupling between the phenol group of the phenol resin soluble in alkali (A) and the diazo group of the naphthoquinone diazide compound (B), or the phenol group and sulfonic acid group. Due to the hydrogen bonding, dissolution in an alkaline aqueous solution (developer) is hindered, and the solubility of the unexposed area is lowered. Thus, a positive pattern is formed by forming a melt | dissolution part and an insoluble part.

  In addition, by applying heat treatment to the adhesive protective film, polymerization of the epoxy resin of the component (C) proceeds with the phenol resin of the component (A), and as a result of forming a three-dimensional network structure, heat resistance, chemical resistance, A cured film excellent in electrical insulation and the like is formed.

Specific examples of the positive photosensitive adhesive composition used in the present embodiment and the results of the characteristic evaluation of the adhesive protective film formed using the positive photosensitive adhesive composition are described.
[Preparation of positive photosensitive adhesive composition]
Into a reaction flask equipped with a nitrogen introduction tube, 30 parts by mass of a cresol novolac type phenolic resin (trade name EP4020G manufactured by Asahi Organic Materials Co., Ltd.) and 52.8 parts by mass of propylene glycol monomethyl ether acetate are added to dissolve the phenolic resin. I let you. After cooling this solution to room temperature (23 ° C.), 14.9 parts by mass of an alicyclic epoxy resin (trade name Celoxide 2021P, manufactured by Daicel Chemical Industries, Ltd.), a naphthoquinone diazide compound (trade name, manufactured by Toyo Gosei Co., Ltd.) 4NT-300) 1.2 parts by mass was added and dissolved by stirring for 60 minutes to obtain a positive photosensitive adhesive composition.

[Formation and curing of adhesive protective film]
The obtained positive photosensitive adhesive composition was coated on a 4 inch (101.6 mm) silicon wafer with a spin coater and heated at 120 ° C. for 3 minutes on a baking plate to form a coating film having a thickness of 6 μm. Formed. This coating film was irradiated with ultraviolet rays (wavelength 365 nm) through a photomask (irradiation energy 200 mJ / cm ² ), developed with paddle development with an aqueous solution of 2.38% by mass of tetramethylammonium hydroxide, washed with pure water, spinned A positive pattern was formed on the wafer by drying. Thereafter, the wafer on which the positive pattern was formed was set in a hot air circulation dryer, and heated and cured at 150 ° C. for 1 hour to obtain a cured film.

[Characteristic evaluation of adhesive protective film]
The cured film was evaluated for adhesion to the wafer, mechanical properties, and chemical resistance. In addition to the formation of the adhesive protective film, a positive photosensitive adhesive composition is applied on a semiconductor wafer at a thickness of 6 μm, exposed and developed to form a 100 μm square pattern. It was cured by heating at 0 ° C. for 15 minutes, and the dimensional change rate before and after heating was measured to be 5%.

  According to the manufacturing method of the present embodiment, an adhesive protective film, which is a surface protective film that also serves as an adhesive layer, is formed on the element forming surface of the semiconductor chip, and directly adhered to the adherend through the adhesive protective film. Therefore, the semiconductor device can be made smaller and thinner than a method of manufacturing using a semiconductor chip with an adhesive layer in which an adhesive layer and a surface protective film are separately formed. Moreover, even if it is a case where an expensive adhesive film is not used or it is used, since the number can be reduced, manufacturing cost can be reduced. Further, a positive photosensitive adhesive comprising a specific (A) alkali-soluble phenol resin, (B) a naphthoquinonediazide compound, (C) an epoxy resin, and (D) a solvent as described above for the adhesive protective film. When the composition is used, an adhesive protective film excellent in adhesiveness and surface protective effect can be formed, and a more reliable semiconductor device can be manufactured.

  While the present invention has been described with reference to the embodiment, the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the invention in the implementation stage. Further, the above embodiment includes descriptions of various stages, and various inventions can be extracted by appropriately combining a plurality of disclosed constituent elements. For example, if at least one of the problems described in the column of the problem to be solved by the invention can be solved even if some of the structural elements are deleted from all the structural elements shown in the embodiment, The configuration from which the configuration requirements are deleted can be extracted as an invention.

  DESCRIPTION OF SYMBOLS 1 ... Semiconductor wafer, 1a ... Front surface (element formation surface), 1b ... Back surface, 2 ... Adhesive protective film, 2a ... Positive type photosensitive adhesive composition layer, 3 ... Cutting groove, 4 ... Protective film, 5 ... Semiconductor Chips, 5A ... first semiconductor chip, 5B ... second semiconductor chip, 6 ... support tape, 7 ... support member, 23 ... blade, 27 ... adsorption collet, Z ... chip region, Y ... dicing region.

Claims (6)

A positive photosensitive adhesive composition is applied to a surface of a semiconductor wafer having a plurality of chip regions and dicing regions for partitioning the chip regions, and semiconductor elements are formed in the plurality of chip regions, respectively, and then dried. Forming a photosensitive adhesive composition layer;
Exposing and developing the positive photosensitive adhesive composition layer to form an adhesive protective film having a predetermined pattern shape;
Forming a cutting groove on the surface of the semiconductor wafer along the dicing region from the adhesive protective film;
Attaching a protective tape to the adhesive protective film forming surface of the semiconductor wafer;
Grinding the back surface of the semiconductor wafer, thinning the semiconductor wafer, and dividing the semiconductor wafer into a plurality of semiconductor chips having the adhesive protective film on the surface;
Peeling the semiconductor chip from the protective tape;
And a step of adhering the peeled semiconductor chip directly to the adherend through the adhesive protective film.   2. The semiconductor according to claim 1, wherein the adhesive protective film is irradiated with light prior to the step of adhering the semiconductor chip to the adherend in order to eliminate the photosensitivity of the adhesive protective film. Device manufacturing method.   3. The method of manufacturing a semiconductor device according to claim 1, wherein a volatile component remaining in the adhesive protective film when the semiconductor chip is bonded to the adherend is 100 ppm or less. The positive photosensitive adhesive composition is
(A) The following general formula (1)

(In the formula, m is an integer of 0 to 100, n is an integer of 0 to 100, and n + m> 1.)
An alkali-soluble phenol resin represented by
(B) A compound having a phenolic hydroxyl group is represented by the following formula (2) or (3)

A naphthoquinonediazide compound obtained by esterifying a naphthoquinonediazidesulfonic acid halide represented by:
The method for manufacturing a semiconductor device according to claim 1, further comprising (C) an epoxy resin, and (D) a solvent.   5. The method of manufacturing a semiconductor device according to claim 1, wherein a dimensional change rate after heating the adhesive protective film at 100 ° C. for 15 minutes is 10% or less. 6. A positive photosensitive adhesive composition for forming a surface protective film of a semiconductor device,
(A) The following general formula (1)

(In the formula, m is an integer of 0 to 100, n is an integer of 0 to 100, and n + m> 1.)
An alkali-soluble phenol resin represented by
(B) A compound having a phenolic hydroxyl group is represented by the following formula (2) or (3)

A naphthoquinonediazide compound obtained by esterifying a naphthoquinonediazidesulfonic acid halide represented by:
A positive photosensitive adhesive composition comprising (C) an epoxy resin, and (D) a solvent.

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