CN114203660A - Bonding silver wire capable of improving mechanical property and preparation method thereof - Google Patents
Bonding silver wire capable of improving mechanical property and preparation method thereof Download PDFInfo
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- CN114203660A CN114203660A CN202111427833.2A CN202111427833A CN114203660A CN 114203660 A CN114203660 A CN 114203660A CN 202111427833 A CN202111427833 A CN 202111427833A CN 114203660 A CN114203660 A CN 114203660A
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- wire
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- doped
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 90
- 238000002360 preparation method Methods 0.000 title claims abstract description 28
- 229910052709 silver Inorganic materials 0.000 claims abstract description 31
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 30
- 239000004332 silver Substances 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 19
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 16
- 229910052737 gold Inorganic materials 0.000 claims abstract description 16
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000011248 coating agent Substances 0.000 claims abstract description 15
- 238000000576 coating method Methods 0.000 claims abstract description 15
- 238000000151 deposition Methods 0.000 claims abstract description 14
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 14
- 239000010936 titanium Substances 0.000 claims abstract description 13
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 12
- 239000002131 composite material Substances 0.000 claims abstract description 11
- 239000002120 nanofilm Substances 0.000 claims abstract description 11
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 11
- 229910045601 alloy Inorganic materials 0.000 claims description 26
- 239000000956 alloy Substances 0.000 claims description 26
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 8
- 229910052718 tin Inorganic materials 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 229910052693 Europium Inorganic materials 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 5
- 238000003723 Smelting Methods 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 238000005266 casting Methods 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 238000005491 wire drawing Methods 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 claims description 2
- 238000004073 vulcanization Methods 0.000 abstract description 11
- 230000003647 oxidation Effects 0.000 abstract description 9
- 238000007254 oxidation reaction Methods 0.000 abstract description 9
- 238000003466 welding Methods 0.000 abstract description 5
- 238000013461 design Methods 0.000 abstract description 4
- 238000007747 plating Methods 0.000 abstract description 3
- 230000007797 corrosion Effects 0.000 description 13
- 238000005260 corrosion Methods 0.000 description 13
- 239000010931 gold Substances 0.000 description 13
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 12
- 239000011575 calcium Substances 0.000 description 11
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 239000011135 tin Substances 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 238000002845 discoloration Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000007670 refining Methods 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 239000010944 silver (metal) Substances 0.000 description 2
- -1 silver and the like Chemical class 0.000 description 2
- 229940079101 sodium sulfide Drugs 0.000 description 2
- 229910052979 sodium sulfide Inorganic materials 0.000 description 2
- ZGHLCBJZQLNUAZ-UHFFFAOYSA-N sodium sulfide nonahydrate Chemical compound O.O.O.O.O.O.O.O.O.[Na+].[Na+].[S-2] ZGHLCBJZQLNUAZ-UHFFFAOYSA-N 0.000 description 2
- 229940048181 sodium sulfide nonahydrate Drugs 0.000 description 2
- WMDLZMCDBSJMTM-UHFFFAOYSA-M sodium;sulfanide;nonahydrate Chemical compound O.O.O.O.O.O.O.O.O.[Na+].[SH-] WMDLZMCDBSJMTM-UHFFFAOYSA-M 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910018512 Al—OH Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052946 acanthite Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000004512 die casting Methods 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PQTCMBYFWMFIGM-UHFFFAOYSA-N gold silver Chemical compound [Ag].[Au] PQTCMBYFWMFIGM-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 description 1
- 229940056910 silver sulfide Drugs 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D9/00—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor
- C21D9/52—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor for wires; for strips ; for rods of unlimited length
- C21D9/525—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor for wires; for strips ; for rods of unlimited length for wire, for rods
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/432—Mechanical processes
- H01L2224/4321—Pulling
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/45105—Gallium (Ga) as principal constituent
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/45164—Palladium (Pd) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
Abstract
A bonding silver wire for improving mechanical property and a preparation method thereof, wherein the bonding silver wire is composed of a doped silver-based bonding wire and a plating layer coated outside the doped silver-based bonding wire; the silver-doped bonding wire comprises the following components in percentage by weight: 2.0 to 3.0 percent of Au, 1.0 to 2.0 percent of Pd, 0.5 to 1.0 percent of Ca, 0.05 to 0.08 percent of Ti, 0.05 to 0.08 percent of Sn0.03 to 0.05 percent of Ce, 0.01 to 0.03 percent of Eu0.01 to 0.03 percent of Ce and the balance of Ag; the coating is formed by depositing an ALD aluminum oxide/titanium oxide composite nano film of 0.1-0.3 mu m on the surface of the silver-doped bonding wire by an atomic layer deposition process. The bonding silver wire with improved mechanical property and the preparation method thereof have reasonable formula design, solve the problems of lower mechanical property, easy wire breakage, easy vulcanization and oxidation under high-speed bonding condition of the bonding silver wire in the prior art by combining multi-element doping and surface coating, improve the preparation method and lead welding, and ensure that the bonding silver wire forms good bonding and has wide application prospect.
Description
Technical Field
The invention belongs to the technical field of bonding wires, and particularly relates to a bonding silver wire with improved mechanical property and a preparation method thereof.
Background
The bonding wire is one of important basic materials of electronic packaging, has the function of realizing the electric connection between a semiconductor chip and a pin, and plays the roles of leading in and out the chip and external current and signals. With the development trend of miniaturization, modularization and high integration of electronic products, the bonding wire is required to have more excellent mechanical properties, processing properties and the like.
In addition, because the gold bonding wire is expensive, it is a current development trend in the bonding wire industry to develop a novel bonding wire with lower price and good performance to replace the traditional gold bonding wire. Because the cost of the silver wire is lower than that of the gold wire, and the bonding process does not need protective gas, the silver wire becomes another bonding wire material for replacing the gold wire except for the copper wire, and the silver wire or the silver-based alloy wire has similar mechanical property with the gold wire and has better electric conduction and heat conduction performance than the gold wire. However, the silver wire is soft and has low strength, so that the wire is easy to break under the high-speed bonding condition and is easy to be vulcanized and oxidized. Therefore, it is necessary to develop a bonding silver wire with improved mechanical properties and a preparation method thereof, so as to improve the mechanical properties and the processability of the bonding silver wire on the premise of ensuring excellent electrical and thermal conductivity.
The Chinese patent application No. CN201210259179.3 discloses a preparation method of a bonded gold-silver alloy wire, which comprises the following metal materials by weight ratio, 20-30% of silver, 5-1000ppm of palladium, calcium, beryllium and cerium, and the balance of gold, and aims to reduce the cost by adding metals such as silver and the like, and does not solve the problems of easy wire breakage, easy vulcanization and oxidation under the high-speed bonding condition in the preparation process of the bonded silver wire.
Disclosure of Invention
The purpose of the invention is as follows: in order to overcome the defects, the invention aims to provide the bonding silver wire with improved mechanical property and the preparation method thereof, the formula design is reasonable, the problems of lower mechanical property, easy wire breakage under high-speed bonding condition, easy vulcanization and oxidation of the bonding silver wire in the prior art are solved by combining multi-element doping and a surface coating, the preparation method and the lead welding are improved, the bonding silver wire forms good bonding, and the application prospect is wide.
The purpose of the invention is realized by the following technical scheme:
a bonding silver wire for improving mechanical property is composed of a doped silver-based bonding wire and a plating layer coated outside the doped silver-based bonding wire; the silver-doped bonding wire comprises the following components in percentage by weight: 2.0 to 3.0 percent of Au, 1.0 to 2.0 percent of Pd, 0.5 to 1.0 percent of Ca, 0.05 to 0.08 percent of Ti, 0.05 to 0.08 percent of Sn0.03 to 0.05 percent of Ce, 0.01 to 0.03 percent of Eu0.01 to 0.03 percent of Ce and the balance of Ag; the coating is formed by depositing an ALD aluminum oxide/titanium oxide composite nano film of 0.1-0.3 mu m on the surface of the silver-doped bonding wire by an atomic layer deposition process.
The bonding silver wire with improved mechanical property provided by the invention solves the problems of low mechanical property, easy wire breakage under high-speed bonding condition, easy vulcanization and oxidation of the bonding silver wire in the prior art by combining multi-element doping with a surface coating.
The silver-doped bonding wire is reasonable in formula design, and the whole mechanical property, oxidation and vulcanization resistance and processability are improved by doping Au, Pd, Ca, Ti, Sn, Ce and other elements which are matched with each other under the condition of basically not influencing the electric conduction and heat conduction properties of the silver wire, wherein the Au and Pd play a role in improving the ductility of the silver wire, the Ca plays a role in improving the shaping of the silver wire, the Ti plays a role in passivating the surface of the silver wire and reducing the vulcanization corrosion, the Sn plays a role in improving the wettability of alloy, the Ce and Eu play a role in preventing segregation and refining grains, the Au, Pd, Ca, Ti and Sn synergistically reduce the oxygen content, and finally the effects of improving the mechanical property, the oxidation and vulcanization resistance and the processability are achieved.
The coating is an ALD aluminum oxide/titanium oxide composite nano film with the thickness of 0.1-0.3 mu m deposited on the surface of the silver-doped bonding wire by adopting an atomic layer deposition technology, and the ALD aluminum oxide/titanium oxide composite nano film has the characteristic of layer-by-layer self-assembly, can endow the bonding silver wire with high hardness and excellent chemical inertia, has very low initial porosity of about 0.003 percent, is highly controllable in compact and uniform deposition rate and is low in cost.
The invention also relates to a preparation method of the bonding silver wire for improving the mechanical property, which comprises the steps of preparing the doped silver-based bonding wire and depositing a coating on an atomic layer, wherein the preparation method of the doped silver-based bonding wire comprises the following steps:
(1) smelting: uniformly mixing Ag, Au, Pd, Ca, Ti, Sn, Ce and Eu, putting the mixture into a vacuum melting machine, carrying out vacuum melting under the conditions that the vacuum degree is 3-5 multiplied by 10 < -4 > Pa and the temperature is 1000-1100 ℃, and carrying out drawing casting to obtain an alloy wire rod with the diameter of 6-10 mm;
(2) drawing: carrying out wire drawing processing on the alloy wire rod to obtain an alloy wire rod with the diameter of 20-25 mu m;
(3) annealing: and annealing the alloy wire to obtain the silver-doped bonding wire.
Further, the preparation method of the bonding silver wire for improving the mechanical property comprises the following steps: stretching by a first coarse wire stretching machine to stretch the wire diameter from 6-10mm to 1-2mm at a stretching speed of 0.1m/s, sequentially stretching by a second fine wire stretching machine to 0.1-0.3mm at a speed of 0.3m/s, sequentially stretching by a superfine wire stretching machine to 0.03-0.05mm at a speed of 0.6m/s, and sequentially stretching by a superfine wire stretching machine to further stretch the alloy wire material into the alloy bonding wire with the wire diameter of 20-25 mu at a speed of 1 m/s.
Further, in the preparation method of the bonding silver wire for improving the mechanical property, the annealing treatment is carried out on the alloy wire under the conditions of 560-580 ℃ and the speed of 80-90 ℃/min.
Further, the preparation method of the bonding silver wire with the improved mechanical property includes the following steps:
(1) pretreatment: ultrasonically cleaning the silver-doped bonding wire in ethanol for 10-20min, drying by using high-purity nitrogen, and after the pretreatment is finished, vacuumizing and packaging by using a vacuum bag for later use;
(2) atomic layer deposition coating: and repeatedly depositing an aluminum oxide film and a titanium oxide film on the pretreated silver-based-doped bonding wire by using an ALD (atomic layer deposition) instrument, and forming an ALD aluminum oxide/titanium oxide composite nano film on the surface of the silver-based-doped bonding wire to obtain the bonded silver wire.
Furthermore, the preparation method of the bonding silver wire for improving the mechanical property also comprises a bonding silver wire lead welding method, and the bonding silver wire lead welding method comprises the following steps that during lead welding, a HANS-5201H type plane wire bonder is adopted as bonding equipment, the ball burning current is 20-25mA, the ball burning time is 0.5-0.8ms, and the ignition air breakdown voltage is 6000V.
The invention relates to a lead bonding method, which aims to realize the electrical connection between a chip and a substrate circuit, wherein in the lead bonding process, the ball bonding is the most common method, in order to ensure that the bonded silver wire forms good bonding (an airless solder ball with good sphericity, consistent size and smooth surface), the parameters of the ball bonding need to be improved.
Compared with the prior art, the invention has the following beneficial effects:
(1) the bonding silver wire for improving the mechanical property disclosed by the invention is reasonable in formula design, and the problems of low mechanical property, easy wire breakage under a high-speed bonding condition, easy vulcanization and oxidation of the bonding silver wire in the prior art are solved by combining multi-element doping with a surface coating;
(2) according to the preparation method of the bonding silver wire for improving the mechanical property, disclosed by the invention, the Au, Pd, Ca, Ti, Sn, Ce and other elements are doped, and the elements are matched with each other, so that the integral mechanical property, the oxidation and vulcanization resistance and the processing property are improved under the condition that the electric conduction and heat conduction performance of the silver wire is basically not influenced, wherein the Au and Pd play a role in improving the ductility of the silver wire, the Ca plays a role in improving the shaping of the silver wire, the Ti plays a role in passivating the surface of the silver wire and reducing the vulcanization corrosion, the Sn plays a role in improving the wettability of the alloy, the Ce and Eu play a role in preventing segregation and refining crystal grains, and the Au, Pd, Ca, Ti and Sn are cooperated to reduce the oxygen content, so that the effects of improving the mechanical property, the oxidation and vulcanization resistance and the processing property are finally achieved;
(3) according to the preparation method of the bonding silver wire for improving the mechanical property, the ALD aluminum oxide/titanium oxide composite nano film with the thickness of 0.1-0.3 mu m is deposited on the surface of the doped silver-based bonding wire through the atomic layer deposition technology, so that the bonding silver wire is endowed with high hardness and excellent chemical inertia, the compact and uniform deposition rate is highly controllable, the cost is low, and the flexibility is high; the parameters of ball bonding are improved, high current-short time ball burning is adopted, the bonding between the solder ball and the electrode interface is better, the bonding strength of the bonding wire is higher, the electrode damage is less, the grain growth of the ball neck part is not obvious, the deformation capability of the solder ball is good, and the bonding quality of the bonded silver wire is improved.
Detailed Description
In the following, the technical solutions in the embodiments of the present invention are clearly and completely described in the embodiments with reference to specific experimental data, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The following embodiment provides a bonding silver wire with improved mechanical property, wherein the bonding silver wire is composed of a doped silver-based bonding wire and a plating layer coated outside the doped silver-based bonding wire; the silver-doped bonding wire comprises the following components in percentage by weight: 2.0 to 3.0 percent of Au, 1.0 to 2.0 percent of Pd, 0.5 to 1.0 percent of Ca, 0.05 to 0.08 percent of Ti, 0.05 to 0.08 percent of Sn0.03 to 0.05 percent of Ce, 0.01 to 0.03 percent of Eu0.01 to 0.03 percent of Ce and the balance of Ag; the coating is formed by depositing an ALD aluminum oxide/titanium oxide composite nano film of 0.1-0.3 mu m on the surface of the silver-doped bonding wire by an atomic layer deposition process.
Example 1
Preparation of silver-doped bonding wire
(1) Smelting: uniformly mixing Ag, Au, Pd, Ca, Ti, Sn, Ce and Eu, putting the mixture into a vacuum melting machine, carrying out vacuum melting under the conditions that the vacuum degree is 5 multiplied by 10 < -4 > Pa and the temperature is 1000 ℃, and carrying out die casting to obtain an alloy wire rod with the diameter of 6 mm;
(2) drawing: drawing the alloy wire rod, drawing by a first coarse drawing machine to draw the wire diameter from 6 to 1mm at a drawing speed of 0.1m/s, drawing by a second fine drawing machine to 0.1mm at a speed of 0.3m/s in sequence, drawing by an ultrafine drawing machine to 0.03mm at a speed of 0.6m/s in sequence, and drawing by an ultrafine drawing machine to further draw the alloy wire rod into an alloy bonding wire with the wire diameter of 20 mu at a speed of 1m/s in sequence;
(3) annealing: the alloy wire was annealed at 580 ℃ at a rate of 80 ℃/min to obtain the silver-doped bonding wire of example 1.
Comparative example 1
Preparation of pure bonded silver wire
(1) Smelting: placing Ag in a vacuum melting machine, carrying out vacuum melting under the conditions that the vacuum degree is 5 multiplied by 10 < -4 > Pa and the temperature is 1000 ℃, and carrying out drawing casting to obtain an alloy wire rod with the diameter of 6 mm;
(2) drawing: drawing the alloy wire rod, drawing by a first coarse drawing machine to draw the wire diameter from 6 to 1mm at a drawing speed of 0.1m/s, drawing by a second fine drawing machine to 0.1mm at a speed of 0.3m/s in sequence, drawing by an ultrafine drawing machine to 0.03mm at a speed of 0.6m/s in sequence, and drawing by an ultrafine drawing machine to further draw the alloy wire rod into an alloy bonding wire with the wire diameter of 20 mu at a speed of 1m/s in sequence;
(3) annealing: the above alloy wire was annealed at 580 deg.c at a rate of 80 deg.c/min to obtain a pure bonded silver wire of comparative example 1.
Example 2
Preparation of bonded silver wire
Ultrasonically cleaning the silver-based doped bonding wire obtained in the embodiment 1 in ethanol for 15min, drying the silver-based doped bonding wire by using high-purity nitrogen, repeatedly depositing an aluminum oxide film and a titanium oxide film on the pretreated silver-based doped bonding wire by using an ALD (atomic layer deposition) instrument, and forming an ALD aluminum oxide/titanium oxide composite nano film on the surface of the silver-based doped bonding wire to obtain the bonded silver wire.
The atomic layer deposition process is as follows:
(1) the preparation of the alumina film, one cycle of the deposition sequence of which comprises the following two half reaction cycles. 1. Allowing the trimethyl aluminum pulse to enter the cavity and react with the surface of the silver-base-doped bonding wire until the surface reaction is finished; 2. unreacted trimethylaluminum is pumped away with the aid of a nitrogen inert carrier gas; 3. water pulse is sent into the chamber, water reacts with the surface of the doped silver-based bonding wire, CH3 groups are removed, an Al-O-Al bridge is formed, and the surface of the doped silver-based bonding wire is passivated with Al-OH again; 4. unreacted water and CH4 were pumped under nitrogen. These 4 steps are arranged as cycles, each cycle producing an alumina film of about 0.1nm at a temperature of 200 ℃. The preparation parameters of the alumina film are shown in Table 1.
(2) The titanium oxide film preparation is based on the same principle as the aluminum oxide film preparation (before the titanium tetraisopropoxide pulse, a cleaning step has to be carried out and all remaining trimethylaluminum has to be removed). And repeatedly depositing an aluminum oxide film and a titanium oxide film on the pretreated silver-based doped bonding wire by using an ALD (atomic layer deposition) instrument, and depositing an ALD aluminum oxide/titanium oxide composite nano film of 0.2 mu m on the surface of the silver-based doped bonding wire. The preparation parameters of the titanium oxide film are shown in Table 2.
TABLE 1
TABLE 2
| Pulse time(s) of titanium tetraisopropoxide | 1 |
| Titanium tetraisopropoxide soak time(s) | 5 |
| Titanium tetraisopropoxide cleaning time(s) | 90 |
| Titanium tetraisopropoxide carrier gas flow (SCCM) | 100 |
| Ar flow (SCCM) | 90 |
| External air pressure (torr) | 1.8 |
| Oxygen plasma pulse time(s) | 1 |
| Oxygen plasma soak time(s) | 5 |
| Oxygen plasma cleaning time(s) | 90 |
| Oxygen plasma carrier gas flow (SCCM) | 100 |
| Growth temperature (. degree.C.) | 190 |
| Inner pressure (torr) | 0.6 |
Effect verification:
mechanical property detection is performed on the doped silver-based bonding wire obtained in the example 1, the pure bonding silver wire obtained in the comparative example 1 and the bonding silver wire obtained in the example 2, and the test results are shown in table 3.
TABLE 1
2. Corrosion resistance
Preparing 0.05mol/L sodium sulfide corrosion solution. 2.4g of sodium sulfide nonahydrate is precisely weighed, 200mL of deionized water is weighed, mixed in a beaker, and stirred by a glass rod until the sodium sulfide nonahydrate is completely dissolved. The samples of example 1, comparative example 1 and example 2 (washed clean with deionized water, placed in a dryer, set at 60 ℃ and set at 1 h. the dried samples of example 1, comparative example 1 and example 2 were weighed and recorded. a plurality of small beakers were prepared, an appropriate amount of 0.05mol/L sodium sulfide etching solution was poured, the samples of example 1, comparative example 1 and example 2 to be etched were placed in the etching solution for 30 minutes, and then taken out after etching was completed, and rinsed with deionized water, weighed after drying at 60 ℃ for 1h, and the samples of example 1, comparative example 1 and example 2 were observed for corrosion discoloration on the surface with an optical microscope.
The sample of comparative example 1 underwent accelerated corrosion for 30 minutes, and exhibited a severe discoloration phenomenon, in which the surface color changed from pale before the test to scorched black, and the weight increased by 0.02% before and after the corrosion, due to the reaction of silver with sulfide ions, oxygen, and water, to form black silver sulfide. .
After 30 minutes of accelerated corrosion, no significant discoloration was observed, with a 0.001% weight increase before and after corrosion, indicating that corrosion occurred, but was less visible under light microscopy.
The sample of example 2 underwent accelerated corrosion for 30 minutes, no discoloration was observed, and no weight increase before and after corrosion was observed, indicating that there was substantially no corrosion.
When the bonding silver wire obtained in example 2 was used for wire bonding, a HANS-5201H type flat wire bonding machine was used as a bonding apparatus, the ball burning current was 25mA, the ball burning time was 0.5ms, and the sparking air breakdown voltage was 6000V. When the morphology of the air-free solder ball and the solder ball is observed by adopting a scanning electron microscope, the solder ball is better combined with an electrode interface, the bonding strength of the bonding wire is higher, the electrode damage is less, the grain growth at the neck part of the ball is not obvious, and the deformation capability of the solder ball is good.
The invention has many applications, and the above description is only a preferred embodiment of the invention. It should be noted that the above examples are only for illustrating the present invention, and are not intended to limit the scope of the present invention. It will be apparent to those skilled in the art that various modifications can be made without departing from the principles of the invention and these modifications are to be considered within the scope of the invention.
Claims (6)
1. The bonding silver wire is characterized by comprising a doped silver-based bonding wire and a coating coated outside the doped silver-based bonding wire; the silver-doped bonding wire comprises the following components in percentage by weight: 2.0 to 3.0 percent of Au, 1.0 to 2.0 percent of Pd, 0.5 to 1.0 percent of Ca, 0.05 to 0.08 percent of Ti, 0.05 to 0.08 percent of Sn0.03 to 0.05 percent of Ce, 0.01 to 0.03 percent of Eu0.01 to 0.03 percent of Ce and the balance of Ag; the coating is formed by depositing an ALD aluminum oxide/titanium oxide composite nano film of 0.1-0.3 mu m on the surface of the silver-doped bonding wire by an atomic layer deposition process.
2. The method for preparing the bonding silver wire with the improved mechanical property according to claim 1, which comprises the steps of preparing a silver-doped bonding wire and depositing a coating by atomic layer deposition, wherein the preparation of the silver-doped bonding wire comprises the following steps:
(1) smelting: mixing Ag, Au, Pd, Ca, Ti, Sn, Ce and Eu uniformly, placing in a vacuum melting machine, and placing in a vacuum degree of 3-5 × 10-4Vacuum melting is carried out under the conditions of Pa and the temperature of 1000-1100 ℃, and the alloy wire rod with the diameter of 6-10mm is formed by drawing casting;
(2) drawing: carrying out wire drawing processing on the alloy wire rod to obtain an alloy wire rod with the diameter of 20-25 mu m;
(3) annealing: and annealing the alloy wire to obtain the silver-doped bonding wire.
3. The method for preparing the bonding silver wire with the improved mechanical property according to claim 2, wherein the wire drawing process comprises the following steps: stretching by a first coarse wire stretching machine to stretch the wire diameter from 6-10mm to 1-2mm at a stretching speed of 0.1m/s, sequentially stretching by a second fine wire stretching machine to 0.1-0.3mm at a speed of 0.3m/s, sequentially stretching by a superfine wire stretching machine to 0.03-0.05mm at a speed of 0.6m/s, and sequentially stretching by a superfine wire stretching machine to further stretch the alloy wire material into the alloy bonding wire with the wire diameter of 20-25 mu at a speed of 1 m/s.
4. The method as claimed in claim 2, wherein the annealing treatment is performed at 560-580 ℃ at a speed of 80-90 ℃/min.
5. The method for preparing the bonding silver wire with the improved mechanical property according to claim 2, wherein the atomic layer deposition coating comprises the following steps:
(1) pretreatment: ultrasonically cleaning the silver-doped bonding wire in ethanol for 10-20min, drying by using high-purity nitrogen, and after the pretreatment is finished, vacuumizing and packaging by using a vacuum bag for later use;
(2) atomic layer deposition coating: and repeatedly depositing an aluminum oxide film and a titanium oxide film on the pretreated silver-based-doped bonding wire by using an ALD (atomic layer deposition) instrument, and forming an ALD aluminum oxide/titanium oxide composite nano film on the surface of the silver-based-doped bonding wire to obtain the bonded silver wire.
6. The method for preparing the bonding silver wire with the improved mechanical property according to claim 2, further comprising a wire bonding method of the bonding silver wire, wherein the wire bonding method of the bonding silver wire comprises the following steps that during wire bonding, a HANS-5201H type plane wire bonding machine is adopted as bonding equipment, the ball burning current is 20-25mA, the ball burning time is 0.5-0.8ms, and the ignition air breakdown voltage is 6000V.
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| CN117133852A (en) * | 2023-07-20 | 2023-11-28 | 贵研半导体材料(云南)有限公司 | Low-light-attenuation anti-color-change bonding silver wire and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117133852A (en) * | 2023-07-20 | 2023-11-28 | 贵研半导体材料(云南)有限公司 | Low-light-attenuation anti-color-change bonding silver wire and preparation method thereof |
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