CN114175260A - 显示装置的制造方法以及用于制造显示装置的基板 - Google Patents
显示装置的制造方法以及用于制造显示装置的基板 Download PDFInfo
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- CN114175260A CN114175260A CN201980099004.0A CN201980099004A CN114175260A CN 114175260 A CN114175260 A CN 114175260A CN 201980099004 A CN201980099004 A CN 201980099004A CN 114175260 A CN114175260 A CN 114175260A
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Abstract
本说明书公开了一种以高可靠性转印半导体发光元件的基板以及使用该基板的显示装置的制造方法。具体地,当利用电磁场在组装基板上自组装半导体发光元件时,在所述组装基板形成用于组装对准(Align)用半导体发光元件的组装槽。组装到所述组装槽的对准用半导体发光元件在最终转印到布线基板的步骤中用于对准。与现有的对准键(Align key)不同,所述对准用半导体发光元件反映出在组装之后的转印过程中发生的半导体发光元件的排列误差。因此,当以所述对准用半导体发光元件为基准将半导体发光元件转印到布线基板时,能够提高转印的精确度。
Description
技术领域
本发明适用于显示装置相关的技术领域,例如涉及一种利用微型LED(LightEmitting Diode;发光二极管)的显示装置的制造方法以及用于制造显示装置的基板。
背景技术
近年来,在显示技术领域中,不断地开发薄型、柔性等具有优异特性的显示装置。与此相反,目前已商用化的主要显示器作为代表有LCD(Liquid Crystal Display;液晶显示屏)和OLED(Organic Light Emitting Diodes;有机液晶显示屏)。
然而,就LCD而言,存在反应时间不快、难以实现柔性的问题,就OLED而言,存在寿命短、量产良率差的问题。
另一方面,发光二极管(Light Emitting Diode:LED)作为将电流转换为光的半导体发光元件广为人知,从1962年利用GaAsP(磷砷化镓)化合物半导体的红色LED被商品化起,与GaP:N系绿色LED一起被用作包括信息通信设备的电子装置的显示图像用光源。因此,可以提出一种通过利用所述半导体发光元件实现显示器来解决上述问题的方案。与基于灯丝的发光元件相比,所述半导体发光元件具有寿命长、功耗低、优异的初始驱动特性以及高抗振性等各种优点。
然而,为了使用半导体发光元件来实现大面积、高像素的显示装置,需要将非常大量的半导体发光元件准确地组装或转印到所述显示装置的布线基板。
因此,本发明提供一种半导体发光元件以最小限度的排列误差转印到布线基板的显示装置的制造方法以及用于制造所述显示装置的基板。
发明内容
发明所要解决的问题
本发明一实施例的目的在于,提供一种用于制造利用半导体发光元件的显示装置的具有高可靠性的新的制造方法。
本发明一实施例的另一目的在于,提供一种在转印半导体发光元件以制造大面积显示装置时,能够使转印过程中的排列误差最小化的组装基板和布线基板。
进一步地,本发明一实施例的又一目的在于,还解决在此未提及到的各种问题。本领域技术人员可以通过说明书和附图的整体精神来理解。
解决问题的技术方案
用于实现上述目的的利用半导体发光元件的显示装置的制造方法,其特征在于,包括:将照明用半导体发光元件组装到组装基板的第一组装槽的步骤;将对准(Align)用半导体发光元件组装到所述组装基板的第二组装槽的步骤;将组装到所述组装基板的半导体发光元件从所述组装基板转印到转印基板的步骤;将转印到所述转印基板的半导体发光元件从所述转印基板转印到布线基板的步骤,在将所述照明用半导体发光元件和所述对准用半导体发光元件组装到所述组装基板的步骤中,利用电场和磁场实现自组装。
作为实施例,其特征在于,所述照明用半导体发光元件和所述对准用半导体发光元件是通过相同工艺形成的相同结构的半导体发光元件。
作为实施例,将所述半导体发光元件组装到所述组装基板的所述第一组装槽或所述第二组装槽的步骤包括:将所述半导体发光元件投入到流体腔室中的步骤;将所述组装基板配置在所述流体腔室的上侧面的步骤;利用具有磁性体的组装装置,使漂浮在所述流体腔室内的所述半导体发光元件与所述组装基板的所述第一组装槽或所述第二组装槽接触的步骤;以及,基于通过形成于所述组装基板的组装电极施加的电场,将所述半导体发光元件组装到所述第一组装槽或所述第二组装槽的步骤。
作为实施例,所述转印基板包括复数个凸起部,复数个所述凸起部形成于与组装到所述组装基板的所述照明用半导体发光元件和所述对准用半导体发光元件相对应的位置处,从所述组装基板转印到所述转印基板的步骤包括:将所述组装基板和所述转印基板重叠,使得所述凸起部和所述半导体发光元件彼此重叠的步骤;以及,使重叠的所述半导体发光元件与所述凸起部接触并固定之后,去除所述组装基板的步骤。
作为实施例,其特征在于,所述组装基板和所述转印基板在彼此对应的位置处具有用于对准的具有相同的凹凸结构的对准键(Align key)。
作为实施例,其特征在于,将组装到所述组装基板的半导体发光元件从所述组装基板转印到所述转印基板的步骤包括:将形成于所述组装基板和所述转印基板的彼此对应的位置处的所述对准键重叠的步骤。
作为实施例,将转印到所述转印基板的半导体发光元件从所述组装基板转印到所述布线基板的步骤包括:将所述转印基板和所述布线基板对准(Alignment),使得所述半导体发光元件配置在所述布线基板的整个区域中的与转印到所述转印基板的半导体发光元件对应的区域的步骤;以及,将所述半导体发光元件固定到与所述布线基板的所述半导体发光元件对应的区域之后,去除所述转印基板的步骤。
作为实施例,其特征在于,所述布线基板由透光性物质形成,将所述转印基板和所述布线基板对准(Alignment)的步骤是利用通过配置在所述布线基板的背面部的摄像机拍摄的图像来执行的。
作为实施例,其特征在于,在将所述转印基板和所述布线基板对准(Alignment)的步骤中,利用通过所述摄像机拍摄的图像,将对应于所述转印基板的所述半导体发光元件和所述布线基板的所述半导体发光元件的区域重叠。
作为实施例,其特征在于,所述转印基板和所述布线基板在彼此对应的位置处具有用于对准的具有相同的凹凸结构的对准键。
作为实施例,将所述转印基板和所述布线基板对准的步骤包括:将形成在所述转印基板和所述布线基板的彼此对应的位置处的对准键重叠的第一对准步骤;以及,将转印到所述转印基板的所述对准用半导体发光元件和形成在与所述对准用半导体发光元件相对应的位置处的所述布线基板的对准标记(Align mark)重叠的第二对准步骤。
作为实施例,在所述半导体发光元件转印到所述布线基板的步骤之后,包括:进行布线工艺以使所述照明用半导体发光元件与所述布线基板电连接的步骤。
作为实施例,包括:在所述对准用半导体发光元件的上部涂覆具有低透射率的物质的步骤。
作为实施例,其特征在于,所述组装基板包括:第一组装基板,当驱动所述显示装置时,射出第一颜色的光的第一半导体发光元件组装到所述第一组装基板;以及第二组装基板,射出不同于所述第一颜色的第二颜色的光的第二半导体发光元件组装到所述第二组装基板。
本发明另一实施例的利用复数个半导体发光元件的显示装置,其特征在于,包括:布线基板;以及复数个半导体发光元件,位于所述布线基板上,复数个所述半导体发光元件包括照明用半导体发光元件和对准用半导体发光元件,所述照明用半导体发光元件和所述对准用半导体发光元件具有相同的形状和相同的发光颜色,所述照明用半导体发光元件与所述布线基板的布线电极电连接,在所述对准用半导体发光元件的顶面设置有具有低透光率的暗膜层。
作为实施例,其特征在于,所述布线基板内每相同面积的所述照明用半导体发光元件的数量比所述对准用半导体发光元件的数量多100倍以上。
作为实施例,其特征在于,所述布线基板还包括具有凹凸结构的对准键。
作为实施例,其特征在于,所述半导体发光元件是具有微米单位的尺寸的LED(Micro-LED)。
发明效果
根据本发明一实施例,能够提供一种用于制造利用半导体发光元件的显示装置的具有高可靠性的新的制造方法。
具体地,当利用电磁场在组装基板上自组装半导体发光元件时,在所述组装基板形成用于组装对准用半导体发光元件的组装槽。组装到所述组装槽的对准用半导体发光元件在转印到最终布线基板的步骤中用于对准。与现有的对准键不同,所述对准用半导体发光元件反映出在组装之后的转印过程中将会发生的半导体发光元件的排列误差。因此,当以所述对准用半导体发光元件为基准将半导体发光元件转印到布线基板时,能够提高转印的精确度。
进一步地,根据本发明另一实施例,还具有在此未提及到的额外的技术效果。本领域技术人员可以通过说明书和附图的整体精神来理解。
附图说明
图1是示出本发明的利用半导体发光元件的显示装置的一实施例的概念图。
图2是图1的A部分的局部放大图。
图3a和图3b是沿图2的B-B线和C-C线剖开的剖视图。
图4是示出图3的倒装芯片类型半导体发光元件的概念图。
图5a至图5c是示出与倒装芯片类型半导体发光元件相关的实现颜色的各种方式的概念图。
图6是示出制造包括射出红色R、绿色G、蓝色B光的半导体发光元件的显示装置的方法的流程图。
图7是示出半导体发光元件通过自组装方式组装到基板的方法的一实施例的图。
图8是图7的D部分的放大图。
图9是示出通过自组装方式组装照明用半导体发光元件和对准用半导体发光元件的过程的流程图。
图10是通过自组装方式组装到组装基板的照明用半导体发光元件和对准用半导体发光元件的剖视图。
图11是示出本发明的利用组装基板和布线基板的显示装置的制造方法的剖视图。
图12是示出本发明的组装基板和组装到所述组装基板的半导体发光元件的俯视图。
图13是示出本发明的转印基板和转印到所述转印基板的半导体发光元件的俯视图。
图14是示出本发明的布线基板和转印到所述布线基板的半导体发光元件的俯视图。
图15是示出仅转印到布线基板的部分区域的半导体发光元件的俯视图。
图16是对转印到布线基板的半导体发光元件进行布线工艺之后的俯视图。
具体实施方式
下面,参照附图对本说明书中公开的实施例进行详细的说明,并且与附图标记无关地对相同或类似的构成要素赋予了相同的附图标记,并将省略对其重复的说明。在以下说明中使用的针对构成要素的后缀“模块”和“部”仅是考虑到便于说明书的撰写而被赋予或混用,其自身并不带有相互区分的含义或作用。另外,在说明本说明书中公开的实施例的过程中,当判断为对相关的公知技术的具体说明会使本说明书中公开的实施例的要旨不清楚时,省略对其的详细说明。另外,需要说明的是,附图仅仅为了便于理解本说明书中公开的实施例,不应被解释为本说明书中公开的技术思想受到附图的限制。
进一步地,虽然为了便于说明而对各个附图进行了说明,但是本领域技术人员通过结合至少两个以上的附图而实现的其他实施例也属于本发明的权利保护范围内。
另外,应当理解,当提及如层、区域或基板的要素存在于其他构成要素“上(on)”时,其可以直接存在于其他要素之上或在它们之间也可以存在中间要素。
在本说明书中说明的显示装置的概念涵盖用单位像素或单位像素的集合显示信息的所有显示装置。因此,不仅可以应用于成品,也可以应用于部件。例如,对应于数字TV的一个部件的面板也独立地对应于本说明书中的显示装置。成品可以包括手机、智能手机(smart phone)、笔记本电脑(laptop computer)、数字广播终端、个人数字助理(PDA:personal digital assistants)、便携式多媒体播放器(PMP:portable multimediaplayer)、导航仪、平板电脑(Slate PC)、Tablet PC、Ultra Book、数字TV、台式电脑等。
然而,本领域技术人员将容易理解,本说明书中记载的实施例的构成可以应用于能够显示的装置,即使是以后开发的新产品形式。
另外,本说明书中提及到的半导体发光元件的概念涵盖LED、微型LED等,并且可以混用。
图1是示出本发明的利用半导体发光元件的显示装置的一实施例的概念图。
如图1所示,在显示装置100的控制部(未示出)处理的信息可以通过柔性显示器(flexible display)来显示。
柔性显示器例如包括可因外力而弯曲、弯折、扭曲、折叠或卷曲的显示器。
进一步地,柔性显示器例如可以是保持现有的平板显示器的显示特性的同时,制造在像纸一样可以弯曲、弯折、折叠或卷曲的薄且柔软的基板上的显示器。
在所述柔性显示器不能弯曲的状态(例如,具有无限曲率半径的状态,以下称为第一状态)下,所述柔性显示器的显示区域呈平面。在因外力而从所述第一状态弯曲的状态(例如,具有有限的曲率半径的状态,以下称为第二状态)下,所述显示区域可以呈曲面。如图1所示,在所述第二状态下显示的信息可以是输出到曲面上的视觉信息。这种视觉信息是通过独立地控制以矩阵形式配置的单位像素(sub-pixel)的发光来实现的。所述单位像素例如指用于实现一种颜色的最小单位。
所述柔性显示器的单位像素可以由半导体发光元件实现。在本发明中,作为将电流转换为光的半导体发光元件的一种,例示了发光二极管(Light Emitting Diode:LED)。所述发光二极管形成为小尺寸,从而即使在所述第二状态下也可以用作单位像素。
下面,参照附图,对利用所述发光二极管实现的柔性显示器进行详细的说明。
图2是图1的A部分的局部放大图。
图3a和图3b是沿图2的B-B线和C-C线剖开的剖视图。
图4是示出图3的倒装芯片类型半导体发光元件的概念图。
图5a至图5c是示出与倒装芯片类型半导体发光元件相关的实现颜色的各种方式的概念图。
如图2、图3a以及图3b所示,作为利用半导体发光元件的显示装置100,例示了利用无缘矩阵(Passive Matrix,PM)方式的半导体发光元件的显示装置100。然而,以下说明的示例也适用于有源矩阵(Active Matrix,AM)方式的半导体发光元件。
如图2所示,图1所示的显示装置100包括基板110、第一电极120、导电性粘合层130、第二电极140以及至少一个半导体发光元件150。
基板110可以是柔性基板。例如,基板110可以包括玻璃或聚酰亚胺(PI,Polyimide),以实现柔性(flexible)显示装置。除此之外,可以使用例如PEN(PolyethyleneNaphthalate)、PET(Polyethylene Terephthalate)等任意材料,只要具有绝缘性和柔性即可。另外,所述基板110可以使用透明材料或不透明的材质中的任意材料。
所述基板110可以是配置第一电极120的布线基板,因此,所述第一电极120可以位于基板110上。
如图3a所示,绝缘层160可以配置在第一电极120所在的基板110上,在所述绝缘层160可以设置有辅助电极170。在这种情况下,在所述基板110层叠有绝缘层160的状态可以成为一个布线基板。更具体地,绝缘层160由诸如聚酰亚胺(PI,Polyimide)、PET、PEN等具有绝缘性且具有柔性的材料制成,可以与所述基板110形成为一体而形成一个基板。
辅助电极170是将第一电极120和半导体发光元件150电连接的电极,其位于绝缘层160上,并且与第一电极120的位置对应地配置。例如,辅助电极170具有点(dot)形状,并且可以通过贯通绝缘层160的电极孔171而与第一电极120电连接。所述电极孔171可以通过用导电物质填充通孔而形成。
如图2或图3a所示,在绝缘层160的一侧表面形成有导电性粘合层130,但是本发明并非必须限定于此。例如,也可以采用在绝缘层160和导电性粘合层130之间形成有执行特定功能的层,或者导电性粘合层130配置在基板110上而没有绝缘层160的结构。在导电性粘合层130配置在基板110上的结构中,导电性粘合层130可以用作绝缘层。
所述导电性粘合层130可以是具有粘合性和导电性的层,为此,在所述导电性粘合层130可以混合有具有导电性的物质和具有粘合性的物质。另外,导电性粘合层130具有柔性,从而在显示装置中实现柔性功能。
作为这种例子,导电性粘合层130可以是各向异性导电膜(anistropy conductivefilm,ACF)、各向异性导电浆(paste)、含有导电粒子的溶液(solution)等。所述导电性粘合层130可以构成为在贯通厚度的Z方向上允许彼此电连接,而在水平的X-Y方向上具有电绝缘性的层。因此,可以将所述导电性粘合层130命名为Z轴导电层(但是,以下称为“导电性粘合层”)。
所述各向异性导电膜是在绝缘性基底构件中混合有各向异性导电介质(anisotropic conductive medium)的形态的膜,当施加热和压力时,仅特定部分因各向异性导电介质而具有导电性。以下,对热和压力施加到所述各向异性导电膜进行说明,但是为了使所述各向异性导电膜的局部具有导电性,也可以应用其他方法。上述其他方法例如可以是仅施加所述热和压力中的任意一种或UV固化等。
另外,所述各向异性导电介质例如可以是导电球或导电粒子。例如,所述各向异性导电膜是在绝缘性基底构件中混合有导电球的形态的膜(film),当施加热和压力时,仅特定部分因导电球而具有导电性。各向异性导电膜可以处于含有复数个由导电性物质的芯被聚合物材料的绝缘膜覆盖而成的粒子的状态,在这种情况下,被施加热和压力的部分的绝缘膜被破坏,从而通过芯而具有导电性。此时,芯的形态可以通过变形而形成在膜的厚度方向上彼此接触的层。作为更具体的例子,热和压力施加到整个各向异性导电膜,并且由于通过各向异性导电膜粘合的对象物的高度差而部分地形成Z轴方向上的电连接。
作为另一例,各向异性导电膜可以处于含有复数个在绝缘芯上覆盖有导电性物质的粒子的状态。在这种情况下,施加了热和压力的部分因导电性物质的变形(按压而粘贴)而在膜的厚度方向上具有导电性。作为又一例,也可以是导电性物质沿Z轴方向贯通绝缘性基底构件而在膜的厚度方向上具有导电性的形态。在这种情况下,导电性物质可以具有尖锐的端部。
所述各向异性导电膜可以是构成为导电球被插入到绝缘性基底构件的一侧表面中的形态的固定排列各向异性导电膜(fixed array ACF)。更具体地,绝缘性基底构件由具有粘合性的物质形成,导电球集中配置在所述绝缘性基底构件的底部,当所述基底构件被施加热和压力时,与所述导电球一起变形而在垂直方向上具有导电性。
然而,本发明并非必须限定于此,所述各向异性导电膜也可以是导电球随机混入到绝缘性基底构件中的形态,或者构成为复数个层并且在任意一层配置有导电球的形态(double-ACF)等。
各向异性导电浆是浆料和导电球的结合形态,可以是在具有绝缘性和粘合性的基底物质中混合有导电球的浆料。另外,含有导电粒子的溶液可以是含有导电性(particle)颗粒或纳米(nano)粒子的形态的溶液。
再次参照图3a,第二电极140与辅助电极170隔开而位于绝缘层160。即,所述导电性粘合层130配置在辅助电极170和第二电极140所在的绝缘层160上。
在辅助电极170和第二电极140位于绝缘层160的状态下形成导电性粘合层130之后,当通过施加热和压力使半导体发光元件150以倒装芯片形式连接时,所述半导体发光元件150与第一电极120和第二电极140电连接。
参照图4,所述半导体发光元件可以是倒装芯片类型(flip chip type)的发光元件。
例如,所述半导体发光元件包括p型电极156、形成有p型电极156的p型半导体层155、形成在p型半导体层155上的有源层154、形成在有源层154上的n型半导体层153、以及在n型半导体层153上沿水平方向与p型电极156隔开配置的n型电极152。在这种情况下,p型电极156可以通过导电性粘合层130与图3所示的辅助电极170电连接,n型电极152可以与第二电极140电连接。
再次参照图2、图3a以及图3b,辅助电极170在一个方向上较长地形成,使得一个辅助电极可以电连接到复数个半导体发光元件150。例如,以辅助电极为中心在左右两侧的半导体发光元件的p型电极可以电连接到一个辅助电极。
更具体地,半导体发光元件150通过热和压力被压入到导电性粘合层130的内部,由此,仅在半导体发光元件150的p型电极156与辅助电极170之间的部分和半导体发光元件150的n型电极152与第二电极140之间的部分具有导电性,而在其余部分没有压入半导体发光元件,从而不具有导电性。如上所述,导电性粘合层130不仅使半导体发光元件150和辅助电极170之间以及半导体发光元件150和第二电极140之间彼此结合,而且还形成电连接。
另外,复数个半导体发光元件150构成发光元件阵列(array),在发光元件阵列上形成有荧光体层180。
发光元件阵列可以包括自身亮度值彼此不同的复数个半导体发光元件。各个半导体发光元件150构成单位像素,并且电连接到第一电极120。例如,第一电极120可以是复数个,半导体发光元件例如配置为数列,各列的半导体发光元件可以电连接到复数个所述第一电极中的任意一个。
另外,由于半导体发光元件以倒装芯片形式连接,因此可以使用生长在透明电介质基板上的半导体发光元件。另外,所述半导体发光元件例如可以是氮化物半导体发光元件。由于半导体发光元件150具有优异的亮度,因此即使是小尺寸也能够构成单个单位像素。
如图3所示,在半导体发光元件150之间可以形成有分隔壁190。在这种情况下,分隔壁190可以用于将单个单位像素彼此分开,并且可以与导电性粘合层130形成为一体。例如,通过半导体发光元件150插入到各向异性导电膜中,各向异性导电膜的基底构件可以形成所述分隔壁190。
另外,当所述各向异性导电膜的基底构件为黑色时,即使没有单独的黑色绝缘体,所述分隔壁190也可以具有反射特性并增加对比度(contrast)。
作为另一例,作为所述分隔壁190可以额外设置有反射性分隔壁。在这种情况下,所述分隔壁190可以根据显示装置的目的而包括黑色(Black)或白色(White)绝缘体。当使用白色绝缘体的分隔壁时,可以具有提高反射性的效果,当使用黑色绝缘体的分隔壁时,可以具有反射特性并增加对比度(contrast)。
荧光体层180可以位于半导体发光元件150的外表面。例如,半导体发光元件150是射出蓝色B光的蓝色半导体发光元件,荧光体层180执行将所述蓝色B光转换为单位像素的颜色的功能。所述荧光体层180可以是构成单个像素的红色荧光体181或绿色荧光体182。
即,在形成红色的单位像素的位置处,在蓝色半导体发光元件上可以层叠有能够将蓝色光转换为红色R光的红色荧光体181,在形成绿色的单位像素的位置处,在蓝色半导体发光元件上可以层叠有能够将蓝色光转换为绿色G光的绿色荧光体182。另外,在形成蓝色的单位像素的部分可以仅单独使用蓝色半导体发光元件。在这种情况下,红色R、绿色G和蓝色B的单位像素可以形成一个像素。更具体地,可以沿第一电极120的各个线层叠有一种颜色的荧光体。因此,在第一电极120中,一个线可以是控制一种颜色的电极。即,红色R、绿色G和蓝色B可以沿第二电极140顺序地配置,由此可以实现单位像素。
然而,本发明并非必须限定于此,而是可以通过半导体发光元件150和量子点(QD)的组合来代替荧光体实现红色R、绿色G和蓝色B的单位像素。
另外,为了提高对比度(contrast),可以在各个荧光体层之间配置有黑矩阵(black matrix)191。即,这种黑矩阵191可以提高明暗对比度。
然而,本发明并非必须限定于此,而是可以使用用于实现蓝色、红色、绿色的其他结构。
参照图5a,各个半导体发光元件150可以以氮化镓(GaN)作为主要材料并同时添加铟(In)和/或铝(Al),从而实现射出包括蓝色在内的各种光的高功率发光元件。
在这种情况下,半导体发光元件150可以是红色、绿色和蓝色半导体发光元件,以分别形成单位像素(sub-pixel)。例如,可以交替配置有红色、绿色和蓝色半导体发光元件R、G、B,并且红色(Red)、绿色(Green)和蓝色(Blue)的单位像素通过红色、绿色和蓝色半导体发光元件形成一个像素(pixel),由此可以实现全彩显示。
参照图5b,半导体发光元件150a可以包括在每个单独元件分别设置有黄色荧光体层的白色发光元件W。在这种情况下,为了形成单位像素,在白色发光元件W上可以设置有红色荧光体层181、绿色荧光体层182和蓝色荧光体层183。另外,利用在这种白色发光元件W上重复红色、绿色和蓝色的彩色滤光片,能够形成单位像素。
参照图5c,也可以采用在紫外线发光元件150b上设置有红色荧光体层184、绿色荧光体层185和蓝色荧光体层186的结构。如上所述,半导体发光元件可以用于从可视光线到紫外线UV的整个区域,并且可以扩展到可以将紫外线UV用作上部荧光体的激发源(excitation source)的半导体发光元件的形态。
再次参照本示例,半导体发光元件位于导电性粘合层上,从而构成显示装置中的单位像素。由于半导体发光元件具有优异的亮度,因此即使是小尺寸也能够构成单个单位像素。
如上所述的单个半导体发光元件150的尺寸例如可以是一个边的长度在80μm以下,并且可以是矩形或正方形元件。在矩形的情况下,可以具有20X80μm以下的尺寸。
另外,即使将一个边的长度为10μm的正方形半导体发光元件150用作单位像素,也会呈现足以构成显示装置的亮度。
因此,例如,当单位像素的尺寸是一边为600μm、另一边为300μm的矩形像素时,半导体发光元件的距离相对足够大。
因此,这种情况下,可以实现具有HD画质以上的高画质的柔性显示器装置。
图6是示出制造包括射出红色R、绿色G、蓝色B光的半导体发光元件的显示装置的方法的流程图。
图1至图5是涉及半导体发光元件组装到布线基板之后的显示装置的内容,则图6具体示出通过转印RGB各自的子像素来制造具有一个单位像素的显示装置的过程。
另外,如图6所示,为了得到本发明的显示装置,先执行半导体发光元件转印到组装基板和转印基板以配置在布线基板的步骤。
半导体发光元件组装到所述组装基板的步骤具体是利用电场和磁场的自组装方法,对此将在后面进行描述。
图6所示的TEMPLATE是指组装基板。
根据图6所示的制造方法,需要三种组装基板和三种转印基板来制造包括RED芯片、GREEN芯片、BLUE芯片的显示装置。
具体地,所述组装基板可以包括用于组装RED半导体发光元件的RED组装基板、用于组装GREEN半导体发光元件的GREEN组装基板、以及用于组装BLUE半导体发光元件的BLUE组装基板。
另外,上述制造方法大体可以分为半导体发光元件组装到组装基板(TEMPLATE)的步骤(S610)、所述半导体发光元件转印到转印基板的诸如盖章(stamp)的步骤(S620)、以及所述半导体发光元件转印到能够实现Active Matrix(有源矩阵)驱动的布线基板的步骤(S630)。
首先,半导体发光元件组装到组装基板的步骤(S610)包括射出各种颜色的光的半导体发光元件组装到相应的组装基板的步骤。例如,射出第一颜色的光的第一半导体发光元件组装到第一组装基板,射出不同于所述第一颜色的第二颜色的光的第二半导体发光元件组装到第二组装基板。
之后,组装到上述各个组装基板的半导体发光元件转印到彼此不同的转印基板(S620)。即,组装到第一组装基板的第一半导体发光元件可以转印到第一转印基板,组装到第二组装基板的第二半导体发光元件可以转印到第二转印基板。
基于图6来表述,则所述转印步骤(S620)可以包括:将RED转印基板(盖章(R))按压在所述RED组装基板,以将所述RED半导体发光元件从所述RED组装基板转印到RED转印基板(盖章(R))的步骤;将GREEN转印基板(盖章(G))按压在所述GREEN组装基板,以将所述GREEN半导体发光元件从所述GREEN组装基板转印到GREEN转印基板(盖章(G))的步骤;以及将BLUE转印基板(盖章(B))按压在所述BLUE组装基板,以将所述BLUE半导体发光元件从所述BLUE组装基板转印到BLUE转印基板(盖章(B))的步骤。
最后,执行将上述各个转印基板按压在一个布线基板,以使所述RED半导体发光元件、GREEN半导体发光元件和BLUE半导体发光元件转印到所述布线基板的过程(S630)。
为了得到大面积显示装置,可以进行复数次半导体发光元件从所述转印基板转印到所述布线基板的过程。即,可以执行复数次平铺(Tiling)转印,使得各个转印过程在一个布线基板的预定位置处进行。
相反,也可以不同于图6所示的方法,使用三种组装基板和一个相同的转印基板来将对应于RED、GREEN、BLUE中的每一个的半导体发光元件转印到布线基板。
例如,将组装到三种组装基板的半导体发光元件转印到布线基板的步骤可以执行为,将组装到各个组装基板的半导体发光元件转印到一个转印基板(RGB集成盖章),之后将所述转印基板与布线基板按压在一起,使得所述三种半导体发光元件均能够被转印到布线基板。
另外,也可以使用一种组装基板和转印基板来将对应于RED、GREEN、BLUE中的每一个的半导体发光元件转印到布线基板。在这种情况下,在自组装时执行对应于RED、GREEN、BLUE中的每一个的半导体发光元件均被组装到一个组装基板,之后一并被转印到转印基板和布线基板的过程。
另一方面,对于图6所示的各个步骤中包括的详细步骤,鉴于本说明书的整体精神,在本领域技术人员能够理解的水平上删除、改变一些步骤,也属于本发明的其他权利保护范围。
图7是示出半导体发光元件通过自组装方式组装到基板的方法的一实施例的图。
另外,图8是图7的D部分的放大图。
在图7和图8中,将简要说明半导体发光元件通过利用电磁场的自组装方式组装到基板的例子。
参照图7和图8,半导体发光元件150可以被投入到填充有流体220的腔室230中。
之后,组装基板210可以配置在腔室230上。根据实施例,组装基板210也可以被投入到腔室230中。
在组装基板210可以形成有与要组装的每个半导体发光元件150相对应的一对电极213、214。所述电极213、214可以实现为透明电极(ITO),或者可以使用其他常见的材料来实现。所述电极213、214对应于随着被施加电压而产生电场,从而稳定地固定与组装槽211、212接触的半导体发光元件150的组装电极。
具体地,所述电极213、214可以被施加交流电压,漂浮在所述电极213、214的周边部分的半导体发光元件150可以因电介质极化而具有极性。另外,就电介质极化的半导体发光元件而言,可能因形成于所述电极213、214的周边部分的不均匀的电场而向特定方向移动或被固定。这被称为介电泳(dielectrophoresis),在本发明的自组装工艺(process)中,利用所述介电泳能够将半导体发光元件150稳定地固定到组装槽211、212。
另外,所述组装槽可以包括:用于照明用半导体发光元件的第一组装槽211;和用于对准用半导体发光元件的第二组装槽212。对准用组装槽212的主要目的是对准而不是为了实现显示像素,因此可以形成为少于第一组装槽的数量。例如,当形成100个第一组装槽211时,可以形成有一个第二组装槽212,也可以形成有更多。然而,在组装到所述第二组装槽212的半导体发光元件150被转印到最终布线基板的过程中,需要满足用于对准的最小数量。例如,在所述组装基板可以形成有三个以上的第二组装槽212。由于一个或两个组装槽只能定义为点或线区域,因此可以通过三个以上的组装槽来指定二维区域,即用于对准。
另外,所述第二组装槽212的直径可以形成为小于所述第一组装槽211的直径。通常,当组装槽的直径较小并且与半导体发光元件的尺寸相似时,组装所述半导体发光元件所需的时间增加。然而,由于所述第二组装槽212的数量与所述第一组装槽211的数量相比非常少,因此半导体发光元件150组装到所述第二组装槽212的时间不会显著影响所有半导体发光元件组装到所述组装基板210的时间。
另外,所述组装电极213、214之间的间隔例如形成为小于半导体发光元件150的宽度和组装槽211、212的直径,从而能够更精确地固定利用电场的半导体发光元件150的组装位置。
另外,在所述组装电极213、214上形成有绝缘层215,从而能够保护电极213、214免受流体220的影响,并且能够防止流过所述组装电极213、214的电流泄漏。例如,绝缘层215可以由二氧化硅、氧化铝等无机绝缘体或有机绝缘体形成为单层或多层。另外,绝缘层215可以具有用于在组装半导体发光元件150时防止损坏所述组装电极213、214的最小厚度,并且可以具有用于稳定地组装所述半导体发光元件150的最大厚度。
在绝缘层215的上部可以形成有分隔壁216。所述分隔壁216的部分区域可以位于所述组装电极213、214的上部,其余区域可以位于所述组装基板210的上部。
例如,在制造组装基板210时,通过去除形成在绝缘层215的整个上部的分隔壁中的一部分,可以形成供每个半导体发光元件150结合到所述组装基板210的组装槽211、212。
如图8所示,在所述组装基板210形成有组装槽211,半导体发光元件150结合到所述组装槽211中,形成有所述组装槽211的表面可以与流体220接触。所述组装槽211可以引导半导体发光元件150的准确组装位置。
另一方面,所述组装槽211可以具有与待组装的半导体发光元件150的形状相对应的形状和尺寸。因此,能够防止其他半导体发光元件或复数个半导体发光元件组装到组装槽211中。
另外,所述组装槽211的深度可以形成为小于所述半导体发光元件150的纵向高度。由此,所述半导体发光元件150可以具有从分隔壁216之间凸出的结构,并且在组装之后的转印过程中能够容易地与转印基板的凸起部接触。
另外,如图7所示,在配置组装基板210之后,包括磁性体的组装装置240可以沿所述组装基板210移动。所述组装装置240可以在与组装基板210接触的状态下移动,以使流体220中的磁场波及到的区域最大化。例如,组装装置240可以包括复数个磁性体,或者也可以包括具有与组装基板210相对应的尺寸的磁性体。在这种情况下,组装装置240的移动距离也可以被限制在预定范围内。
通过由组装装置240产生的磁场,腔室230内的半导体发光元件150可以向组装装置240移动。
半导体发光元件150在向组装装置240移动的过程中,可以如图8所示进入组装槽211并与组装基板210接触。
另一方面,所述半导体发光元件150可以是通过相同工艺制成的相同形状的半导体发光元件。然而,组装到图7所示的第一组装槽211的半导体发光元件之后将用作照明用半导体发光元件,就组装到第二组装槽212的半导体发光元件而言,将用作对准用半导体发光元件。
另外,如图8所示,所述半导体发光元件150为水平型半导体发光元件,可以包括第一导电型半导体层155、有源层154、第二导电型半导体层153、第一导电型电极156和第二导电型电极152。另外,在所述导电型电极152、156的下部可以包括磁性层,以能够执行自组装工艺。然而,这仅仅是示例,本发明不限于此。因此,本发明可以应用于所有种类的半导体发光元件,而不论是垂直型半导体发光元件还是水平型半导体发光元件。
进一步地,在组装槽211和/或半导体发光元件150可以形成有用于使半导体发光元件150的第二导电型半导体层153与所述组装基板210接触的图案或形状等。
另一方面,通过由组装基板210的组装电极213、214产生的电场,能够防止与组装基板210接触的半导体发光元件150因组装装置240的移动而分离的现象。
因此,通过图7和图8所示的利用电磁场的自组装方式,复数个半导体发光元件150同时多发性地被组装到所述组装基板210。
图9是示出照明用半导体发光元件和对准用半导体发光元件通过自组装方式组装到组装基板的过程的流程图。
如上所述,在利用电磁场的自组装方式中,半导体发光元件(LED)分散存在于流体内,组装基板配置在填充有所述流体的腔室的上部(S611)。
另外,所述半导体发光元件(LED)具有通过相同工艺形成的相同的结构,并且在所述组装基板预先形成有用于照明用半导体发光元件的组装槽和用于对准用半导体发光元件的组装槽。
所述半导体发光元件(LED)可以是水平型半导体发光元件,并且可以具有无方向性的圆形结构以缩短组装到组装槽的时间。
在自组装方式中,复数个半导体发光元件在流体内同时多发性地被组装到组装基板,照明用半导体发光元件和对准用半导体发光元件在没有附加工艺的情况下一次性被组装到所述组装基板内(S612)。通过所有半导体发光元件组装到所述组装基板的预先形成的组装槽中,所述组装过程完成(S613)。
图10是通过自组装方式组装到组装基板的照明用半导体发光元件和对准用半导体发光元件的剖视图。
如图10所示,在组装基板210的上部形成有组装电极213、214,并且在其上涂覆绝缘层215。另外,组装槽由部分地形成在绝缘层215上的分隔壁216定义。
组装到所述组装基板210的半导体发光元件大体分为照明用半导体发光元件1501和对准用半导体发光元件1502。另外,如图10所示,组装有照明用半导体发光元件1501的第一组装槽的宽度E可以大于组装有对准用半导体发光元件1502的第二组装槽的宽度F。
通过将所述第二组装槽的宽度F形成为小于第一组装槽的宽度E,可以在将来的半导体发光元件的转印步骤中用以更精确的对准目的。例如,当半导体发光元件的横向长度为50μm时,用于组装照明用半导体发光元件的第一组装槽的宽度形成为55μm,以隔开大致5μm以内的间隔差,这从组装时间的角度是有效的。这是因为,如果组装槽的宽度与半导体发光元件的横向长度几乎相同,则可以精确地组装所述半导体发光元件,但是考虑到所述半导体发光元件的组装数量,可能需要较长时间。
然而,就对准用半导体发光元件而言,与照明用半导体发光元件相比,需要组装的数量极少,单个组装时间对整体组装时间产生的影响微乎其微,因此,可以将所述第二组装槽的组装槽宽度形成在51μm至53μm范围内,由此用以更精确的对准目的。即,就组装到第一组装槽的半导体发光元件而言,在所述第一组装槽内的位置可以在5μm范围内变化,但是就组装到第二组装槽的半导体发光元件而言,在所述第二组装槽内的位置在1μm至3μm范围内变化。因此,如果将组装到位置被更精确地控制的所述第二组装槽的半导体发光元件用作对准用指标,则在最终布线基板上也能够实现精确的转印。
然而,在本发明中,第二组装槽不一定必须小于第一组装槽。单独形成对准用组装槽的主要原因是为了预先判断在自组装之后的转印过程中发生的半导体发光元件的位置偏差,以使因所述位置偏差而在布线基板上产生的半导体发光元件的排列误差最小化。因此,所述第二组装槽也可以等于或大于第一组装槽。然而,为了更精确地转印,所述第二组装槽优选小于所述第一组装槽。
图11是示出本发明的利用组装基板和布线基板的显示装置的制造方法的剖视图。
图11(a)是示出组装到组装基板210的半导体发光元件1501、1502和包括凸起部311的转印基板310上下对准的剖视图。
形成在所述组装基板210上的半导体发光元件包括照明用半导体发光元件1501和对准用半导体发光元件1502。
另外,所述转印基板的凸起部311具有足以转印所述半导体发光元件1501、1502的粘合力。
所述凸起部311以规定间隔形成,以对应于组装基板210的半导体发光元件1501、1502的配置间隔。另外,为了所述凸起部311与所述半导体发光元件1501、1502准确地转印,可以执行对准(Alignment)过程。
所述对准过程通过例如使所述组装基板210或所述转印基板310中的任意一方相对于另一方水平移动,然后相对于所述另一方垂直移动来执行。之后,通过摄像机传感器等来检查组装基板210的半导体发光元件1501、1502和与所述半导体发光元件对应的转印基板的凸起部311的位置是否重叠,如果重叠,则与所述凸起部311对应地转印所述半导体发光元件,并且去除所述组装基板210。
另外,所述组装基板210和所述转印基板310可以在彼此对应的位置处具有用于对准的对准键。所述对准键例如可以在各个基板上形成为相同的凹凸结构,使得在转印过程中,各个对准键可以相接触。然而,本发明不限于此,也可以是本领域技术人员能够想到的各种结构的对准键。
另一方面,如果组装到组装基板210的半导体发光元件的数量较少,则可以如上所述单独判断转印基板310的凸起部311和组装基板210的半导体发光元件是否重叠并进行转印。然而,如果组装到组装基板210的半导体发光元件不计其数,则需要长时间的检查时间来单独掌握所述半导体发光元件和与其对应的凸起部的位置。因此,如果形成有与组装基板和转印基板对应的对准键,则可以仅通过确认所述对准键是否重叠来进行半导体发光元件的转印工艺。
图11(b)是半导体发光元件1501、1502从组装基板210转印到转印基板310之后的剖视图。
如图11(b)所示,所述半导体发光元件1501、1502被稳定地转印到所述转印基板310的凸起部311。
所述凸起部311可以是诸如PDMS(polydimethylsiloxane:聚二甲基硅氧烷)的柔性膜材料,具有足够的粘合力以接触和转印半导体发光元件。另外,支撑所述凸起部311的转印基板310的主要材料可以包括PET(Polyethylene terephthalate:聚对苯二甲酸乙二醇酯)、PCE(Polycarboxylate Ether:聚羧酸醚)和玻璃中的至少一种以上。
图11(c)是半导体发光元件1501、1502从转印基板310的凸起部311转印到布线基板110之后的剖视图。
所述布线基板110可以形成有用于将照明用半导体发光元件1501和所述布线基板110电连接的电极部。
相反,在转印对准用半导体发光元件1502的位置处不会形成电极部。转印所述对准用半导体发光元件1502是为了在从转印基板310转印到布线基板110的过程中精确地对准的,在将来的布线工艺之后不用作发光元件。
另外,在转印所述对准用半导体发光元件1502的位置处,与所述对准用半导体发光元件1502对应的对准标记111可以形成在所述布线基板110上。
另外,除了所述Align mark(对准标记)111之外,所述布线基板110还可以在与转印基板310的对准键对应的位置处具有相同结构的对准键。
另外,在所述布线基板110可以设置有用于将所述半导体发光元件150稳定地固定到所述布线基板110的粘合层。所述粘合层例如是各向异性导电粘合层,可以同时执行所述半导体发光元件150的转印和布线工艺。
另外,在所述布线基板110的将要转印照明用半导体发光元件1501的位置处可以设置有反射层。当将来驱动照明用半导体发光元件1501时,所述反射层可以通过反射向布线基板110方向射出的光来提高外部光提取效率。
另外,在所述布线基板上的可预先形成的粘合层、电极部、反射层的配置间隔,需要与位于转印基板310的半导体发光元件的配置间隔相同。因此,为了将半导体发光元件从所述转印基板310准确地转印到所述布线基板110,可以执行对准过程。
所述对准过程可以通过用摄像机分别拍摄半导体发光元件所在的转印基板和转印半导体发光元件之前的布线基板,并且在所述布线基板上指定所述半导体发光元件将要被转印到的位置来进行。
另外,为了精确地对准,所述布线基板110可以由透光性物质形成。因此,将所述转印基板310和所述布线基板110对准的步骤可以通过在所述布线基板110的不面向所述转印基板310的背面部配置摄像机,并且利用通过所述摄像机拍摄的图像来执行。
具体地,通过设置在所述布线基板110的背面部的摄像机来拍摄所述转印基板310的将要转印半导体发光元件和所述半导体发光元件的所述布线基板110的正面部。之后,可以利用通过所述摄像机拍摄的图像,将对应于所述转印基板310的所述半导体发光元件和所述布线基板110的所述半导体发光元件的区域重叠,从而设定转印的准确位置。
另一方面,如果转印到布线基板110的半导体发光元件的数量较多,则需要长时间的检查时间在布线基板10上单独标记对应于所述半导体发光元件的区域并判断是否与所述半导体发光元件重叠。因此,如果在转印基板和布线基板形成有对应的对准键,则可以仅通过确认所述对准键是否重叠来进行半导体发光元件的转印工艺。
然而,形成于转印基板的对准键存在通过复数次的转印过程而变形的风险。这是因为,所述转印基板使用具有粘合力以转印半导体发光元件的柔性材料,可能通过重复的转印工艺而被拉伸或变形。
进一步地,转印到转印基板的半导体发光元件也可能因所述转印基板的物性而在转印之前和之后具有位置偏差。
另一方面,就对准键而言,预先形成在所述转印基板上,无法反映所述位置偏差,如果最终基于所述对准键进行转印,则会出现与所述位置偏差相对应的半导体发光元件的排列误差。
因此,如果使用预先形成在转印基板上的对准键,则随着转印工艺的增加,所述半导体发光元件的排列误差可能会恶化。
最终,除了形成在转印基板上的所述对准键之外,可能需要能够使所述半导体发光元件的排列误差最小化的使用附加对准标记的对准步骤。
作为所述对准标记,在本发明中,使用对准用半导体发光元件。
所述对准用半导体发光元件在自组装过程中被组装到组装基板,之后被转印到转印基板,最终被转印到布线基板。
在转印到所述转印基板和转印到布线基板的过程中,进行与照明用半导体发光元件相同的转印过程,即使在转印过程之前和之后出现半导体发光元件的排列误差,也可以原样反映出所述排列误差。即,如果将所述对准用半导体发光元件用于对准目的,则可以忽略在半导体发光元件转印到布线基板的步骤中可能发生的排列误差的影响。
因此,追加使用所述对准用半导体发光元件进行对准的步骤可以分为以下步骤。首先,可以执行将形成在所述转印基板310和所述布线基板110的彼此对应的位置处的对准键重叠的第一对准步骤。进一步地,可以执行将位于所述转印基板310的所述对准用半导体发光元件1502和在所述布线基板110上的形成在所述对准用半导体发光元件的相应区域的预先形成的对准标记111重叠的第二对准步骤。
可以通过所述第一对准步骤来确认转印基板310的半导体发光元件被转印到布线基板110的大致的转印位置,并且通过所述第二对准步骤将转印基板310的半导体发光元件精确地转印到布线基板110。
另一方面,在图11所示的利用转印基板310的显示装置的制造中,例示了转印过程执行两次,但是本发明不限于上述转印次数。例如,可以执行附加转印工艺以形成用于垂直型半导体发光元件的导电型电极或形成半导体发光元件的光提取结构等。
图12是示出本发明的组装基板和组装到所述组装基板的半导体发光元件的俯视图。
如图12(a)所示,在所述组装基板210设置有:用于照明用半导体发光元件的第一组装槽211;和用于对准用半导体发光元件的第二组装槽212。另外,在从所述组装基板210转印到转印基板时,预先形成用于准确地对准的对准键217。
图12(b)是半导体发光元件通过利用电磁场的自组装方法组装到图12(a)的组装基板之后的俯视图。
如上所述,照明用半导体发光元件1501和对准用半导体发光元件1502是通过相同工艺形成的相同结构的半导体发光元件,但是将来半导体发光元件的作用根据所述组装基板210的组装槽来确定。
如图12(b)所示,照明用半导体发光元件1501组装到第一组装槽并具有富余空间。相反,第二组装槽的宽度形成为比第一组装槽小,如图12(b)所示,对准用半导体发光元件1502可以与第二组装槽几乎紧密组装。
图13是示出本发明的转印基板和转印到所述转印基板的半导体发光元件的俯视图。
如图13(a)所示,在所述转印基板310可以设置有具有与预先形成在图12(b)的组装基板210上的对准键217相对应的结构的对准键317。另外,在与组装到组装基板的照明用半导体发光元件和对准用半导体发光元件相对应的位置处设置有各自的凸起部311、312。
所述凸起部311、312的宽度可以形成为比所述半导体发光元件更大,以便稳定地粘合并转印半导体发光元件。
图13(b)是示出通过图13(a)的凸起部转印到转印基板的半导体发光元件1501、1502的俯视图。
组装到图12(b)的组装基板的半导体发光元件在保持相同的间距(Pitch)的状态下,如图13(b)所示,被转印到转印基板310。
然而,就形成于所述转印基板的对准键而言,由与转印基板的凸起部相同的柔性材料形成,可能随着重复执行上述转印过程而变形。
图14是示出本发明的布线基板和转印到所述布线基板的半导体发光元件的俯视图。
如图14(a)所示,在所述布线基板110可以形成有具有与预先形成在图12(b)的转印基板310上的对准键317相对应的形状的对准键113。所述对准键113可以包括凹凸结构。
另外,在与转印基板的对准用半导体发光元件相对应的位置处可以形成有对准标记111。
图14(b)是示出转印到图14(a)的布线基板110的半导体发光元件1501、1502的俯视图。
如上所述,半导体发光元件1501、1502转印到所述布线基板110的过程如下。
首先,将形成于转印基板的对准键和形成于布线基板的对准键重叠,以确认大致的位置。
不利用所述对准键来确定转印到布线基板的最终位置是因为,所述对准键预先形成在转印基板上,无法反映在转印过程中产生的半导体发光元件的位置偏差。
所述位置偏差是指,所述半导体发光元件阵列的平均位置因转印基板的物性(盖章结构和柔性材料)而在转印之前和之后发生变化。因此,当仅使用所述对准键来进行转印时,所述位置偏差被原样反映,在布线基板上表现为半导体发光元件的排列误差。另外,就所述对准键而言,随着重复转印工艺而发生个别变形,由此所述排列误差可能进一步恶化。
因此,当利用对准键确定了布线基板内的将要转印转印基板的半导体发光元件的大致的位置时,将位于转印基板的对准用半导体发光元件和形成于布线基板的对准标记111重叠以确定准确的转印位置。
所述对准用半导体发光元件进行了与周围的半导体发光元件相同的转印过程,半导体发光元件阵列的平均位置在转印之前和之后的变化被原样反映,因此在转印之前和之后不会发生因位置偏差引起的排列误差。
最终,当执行上述两次对准步骤时,如图14(b)所示,对准用半导体发光元件1502被转印到所述对准标记111,照明用半导体发光元件1501与所述对准用半导体发光元件1502保持规定的间隔差被精确地转印。
图15是示出转印到布线基板的部分区域的半导体发光元件的俯视图。
图15中用虚线表示的区域是从图14(b)的转印基板转印的半导体发光元件的排列。
为了得到大面积显示装置,可以进行复数次半导体发光元件从转印基板转印到布线基板的过程。
例如,就图15所示的布线基板110而言,需要进行四次转印工艺才能够使半导体发光元件填充所述布线基板110内的所有区域。
各个转印过程需要在所述布线基板110内精确地调节,如图15所示,通过对准标记111和转印到所述对准标记的上部的对准用半导体发光元件1502,能够进行精确地转印。
具体地,当转印基板与布线基板110重叠以转印半导体发光元件时,首先判断对准键113是否重叠。如果判断为所述对准键113已重叠,则精确地调节位置以使布线基板110的对准标记111和转印基板的对准用半导体发光元件重叠,之后将照明用半导体发光元件和对准用半导体发光元件转印到布线基板110。
图15中虚线所示的区域是通过上述方法进行转印之后的俯视图,照明用半导体发光元件1501和对准用半导体发光元件1502被转印到布线基板110的准确位置处。
另外,通过上述一次转印进行转印的照明用半导体发光元件的数量可以显著大于对准用半导体发光元件的数量。例如,所述布线基板内的每个相同面积上的所述照明用半导体发光元件的数量可以比所述对准用半导体发光元件的数量多100倍以上。
图16是对转印到布线基板的半导体发光元件进行布线工艺之后的俯视图。
如图16所示,照明用半导体发光元件1501可以形成布线电极120并与布线基板110电连接,以便在驱动显示装置时射出特定颜色的光。
相反,如图16所示,在布线基板110的转印有对准用半导体发光元件的位置处的上部可以选择性地形成有暗膜层183。所述暗膜层183由具有低透光率的材料形成。例如,所述暗膜层183可以由黑色树脂(Black Resin)或黑色光刻胶(Black colored Photoresist)形成。
所述暗膜层183用于防止在驱动显示装置时,可能从所述对准用半导体发光元件产生的光泄漏到外部。这是因为,即使对准用半导体发光元件未与布线基板110电连接,从周围的照明用半导体发光元件1501产生的第一次光也被传递到所述对准用半导体发光元件,从而可能从所述对准用半导体发光元件产生第二次光。
以上说明仅是对本发明的技术思想的示例性说明,本领域普通技术人员可以在不脱离本发明的本质特性的范围内进行各种修改和变形。
因此,本发明中公开的实施例并不用于限定本发明的技术思想,而是用于说明,并且本发明的技术思想不受这些实施例的限制。
本发明的保护范围应由所附权利要求书来解释,应当解释为,在其等同范围内的所有技术思想均包含在本发明的权利保护范围内。
Claims (18)
1.一种显示装置的制造方法,其特征在于,包括:
将照明用半导体发光元件组装到组装基板的第一组装槽的步骤;
将对准用半导体发光元件组装到所述组装基板的第二组装槽的步骤;
将组装到所述组装基板的半导体发光元件从所述组装基板转印到转印基板的步骤;以及
将转印到所述转印基板的半导体发光元件从所述转印基板转印到布线基板的步骤,
在将所述照明用半导体发光元件和所述对准用半导体发光元件组装到所述组装基板的步骤中,利用电场和磁场自组装所述照明用半导体发光元件和所述对准用半导体发光元件。
2.根据权利要求1所述的显示装置的制造方法,其特征在于,
所述照明用半导体发光元件和所述对准用半导体发光元件是通过相同工艺形成的相同结构的半导体发光元件。
3.根据权利要求2所述的显示装置的制造方法,其特征在于,
将所述半导体发光元件组装到所述组装基板的所述第一组装槽或所述第二组装槽的步骤包括:
将所述半导体发光元件投入到流体腔室中的步骤;
将所述组装基板配置于所述流体腔室的上侧面的步骤;
利用具有磁性体的组装装置,使漂浮在所述流体腔室内的所述半导体发光元件与所述组装基板的所述第一组装槽或所述第二组装槽接触的步骤;以及
基于由形成于所述组装基板的组装电极施加的电场,将所述半导体发光元件组装到所述第一组装槽或所述第二组装槽的步骤。
4.根据权利要求1所述的显示装置的制造方法,其特征在于,
所述转印基板包括复数个凸起部,复数个所述凸起部形成于与组装到所述组装基板的所述照明用半导体发光元件和所述对准用半导体发光元件相对应的位置,
将组装到所述组装基板的半导体发光元件从所述组装基板转印到所述转印基板的步骤包括:
将所述组装基板和所述转印基板重叠,使得所述凸起部和所述半导体发光元件彼此重叠的步骤;以及
使重叠的所述半导体发光元件与所述凸起部接触并固定之后,去除所述组装基板的步骤。
5.根据权利要求1所述的显示装置的制造方法,其特征在于,
所述组装基板和所述转印基板在彼此对应的位置设置有用于对准的具有相同的凹凸结构的对准键。
6.根据权利要求5所述的显示装置的制造方法,其特征在于,
将组装到所述组装基板的半导体发光元件从所述组装基板转印到所述转印基板的步骤包括:
将形成于所述组装基板和所述转印基板的彼此对应的位置的所述对准键重叠的步骤。
7.根据权利要求1所述的显示装置的制造方法,其特征在于,
将转印到所述转印基板的半导体发光元件从所述组装基板转印到所述布线基板的步骤包括:
将所述转印基板和所述布线基板对准,使得所述半导体发光元件配置于所述布线基板的整个区域中与转印到所述转印基板的半导体发光元件对应的区域的步骤;以及
将所述半导体发光元件固定到所述布线基板的与所述半导体发光元件对应的区域之后,去除所述转印基板的步骤。
8.根据权利要求7所述的显示装置的制造方法,其特征在于,
所述布线基板由透光性物质形成,
将所述转印基板和所述布线基板对准的步骤是利用由配置于所述布线基板的背面部的摄像机拍摄到的图像执行的。
9.根据权利要求8所述的显示装置的制造方法,其特征在于,
在将所述转印基板和所述布线基板对准的步骤中,利用由所述摄像机拍摄到的图像,将所述转印基板的对应于所述半导体发光元件的区域和所述布线基板的对应于所述半导体发光元件的区域重叠。
10.根据权利要求8所述的显示装置的制造方法,其特征在于,
所述转印基板和所述布线基板在彼此对应的位置设置有用于对准的具有相同的凹凸结构的对准键。
11.根据权利要求10所述的显示装置的制造方法,其特征在于,
将所述转印基板和所述布线基板对准的步骤包括:
将形成在所述转印基板和所述布线基板的彼此对应的位置的对准键重叠的第一对准步骤;以及
将转印到所述转印基板的所述对准用半导体发光元件和所述布线基板的形成于与所述对准用半导体发光元件相对应的位置的对准标记重叠的第二对准步骤。
12.根据权利要求1所述的显示装置的制造方法,其特征在于,
在所述半导体发光元件转印到所述布线基板的步骤之后,包括:
通过进行布线工艺使所述照明用半导体发光元件与所述布线基板电连接的步骤。
13.根据权利要求12所述的显示装置的制造方法,其特征在于,包括:
在所述对准用半导体发光元件的上部涂覆具有低透光度的物质的步骤。
14.根据权利要求1所述的显示装置的制造方法,其特征在于,
所述组装基板包括:
第一组装基板,驱动所述显示装置时射出第一颜色的光的第一半导体发光元件组装到所述第一组装基板;以及
第二组装基板,射出不同于所述第一颜色的第二颜色的光的第二半导体发光元件组装到所述第二组装基板。
15.一种显示装置,其特征在于,包括:
布线基板;以及
复数个半导体发光元件,位于所述布线基板上,
复数个所述半导体发光元件包括照明用半导体发光元件和对准用半导体发光元件,
所述照明用半导体发光元件和所述对准用半导体发光元件具有相同的形状和相同的发光颜色,
所述照明用半导体发光元件与所述布线基板的布线电极电连接,
在所述对准用半导体发光元件的顶面设置有具有低透光率的暗膜层。
16.根据权利要求15所述的显示装置,其特征在于,
所述布线基板内的每个相同面积上的所述照明用半导体发光元件的数量比所述对准用半导体发光元件的数量多100倍以上。
17.根据权利要求15所述的显示装置,其特征在于,
所述布线基板还包括具有凹凸结构的对准键。
18.根据权利要求15所述的显示装置,其特征在于,
所述半导体发光元件是具有微米单位的尺寸的LED(Micro-LED)。
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KR20200026760A (ko) * | 2019-09-09 | 2020-03-11 | 엘지전자 주식회사 | 반도체 발광소자를 이용한 디스플레이 장치 |
WO2021054507A1 (ko) * | 2019-09-19 | 2021-03-25 | 엘지전자 주식회사 | 반도체 발광소자의 자가조립 장치 |
EP4071789A4 (en) | 2019-09-19 | 2024-02-14 | Lg Electronics Inc | SUBSTRATE CHUCK FOR SELF-ASSEMBLY OF LIGHT-EMITTING SEMICONDUCTOR DIODES |
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KR102260638B1 (ko) * | 2019-09-26 | 2021-06-04 | 엘지전자 주식회사 | 반도체 발광소자의 자가조립 장치 |
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KR102287837B1 (ko) * | 2019-12-05 | 2021-08-10 | 주식회사 리페어코리아 | 메탈 메쉬를 이용한 투명 디스플레이 제조용 플레이트 |
KR20190143840A (ko) * | 2019-12-11 | 2019-12-31 | 엘지전자 주식회사 | 마이크로 led와 관련된 디스플레이 장치 및 이의 제조 방법 |
KR20200005516A (ko) * | 2019-12-26 | 2020-01-15 | 엘지전자 주식회사 | 발광 소자를 이용한 디스플레이의 제조 장치 및 그 제조 방법 |
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KR20190085892A (ko) * | 2019-07-01 | 2019-07-19 | 엘지전자 주식회사 | 마이크로 led를 이용한 디스플레이 장치 및 이의 제조 방법 |
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