CN114151730B - Gas supply system for providing gas switching and gas switching method - Google Patents
Gas supply system for providing gas switching and gas switching method Download PDFInfo
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- CN114151730B CN114151730B CN202111523467.0A CN202111523467A CN114151730B CN 114151730 B CN114151730 B CN 114151730B CN 202111523467 A CN202111523467 A CN 202111523467A CN 114151730 B CN114151730 B CN 114151730B
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17D—PIPE-LINE SYSTEMS; PIPE-LINES
- F17D1/00—Pipe-line systems
- F17D1/02—Pipe-line systems for gases or vapours
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45593—Recirculation of reactive gases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Abstract
The invention discloses a gas supply system for providing gas switching, comprising: a first gas source; the first main pipe is provided with an upstream end and a downstream end, and the upstream end of the first main pipe is connected with the first gas source; a first bypass tube bypassing between the upstream and downstream ends of the first main tube; and the collecting pipe is provided with an upstream end and a downstream end, the upstream end of the collecting pipe is connected with the downstream end of the first main pipe, and the downstream end of the collecting pipe is connected with the reaction cavity. The first main pipe, the first bypass pipe and the collecting pipe enable first gas to be selectively conveyed to the reaction cavity through the downstream of the first main pipe and the collecting pipe by means of a switching means, or to be circularly conveyed in a closed loop formed by the first main pipe and the first bypass pipe. In addition, the invention also provides a method for switching the gas executed by the gas supply system.
Description
Technical Field
The present invention relates to a gas supply system, and more particularly, to a gas supply system for a semiconductor process apparatus, and more particularly, to a gas supply system for a reaction chamber and a gas switching method thereof.
Background
Reaction chambers in semiconductor fabrication are known to selectively use different gases to perform specific chemical reactions according to different process requirements. Gas supply systems are known to supply and switch different reactant gases to the reaction chamber to achieve such processes.
Fig. 1 illustrates a conventional gas supply system, which includes a first gas source 1 and a second gas source 2. The first gas source 1 is connected to a first main pipe a via a first flow control valve 11 and the second gas source 2 is connected to a second main pipe B via a second flow control valve 21. The first main pipe a and the second main pipe B are connected to a manifold C via the first main pipe valve 12 and the second main pipe valve 22, respectively, and the manifold C is connected downstream to the reaction chamber 3 to supply the first or second reaction gas. A pumping system 4 is connected to the reaction chamber 3 for pumping out excess reaction gases. The first main pipe a is also connected to a first branch pipe a 'via a first branch pipe valve 13, and the second main pipe B is also connected to a second branch pipe B' via a second branch pipe valve 23. The first branch pipe a 'and the second branch pipe B' are converged to the exhaust pipe D via a pressure detector 5.
The gas supply system of fig. 1 may perform gas switching. By controlling these valve bodies 11, 12, 13, 21, 22, 23, the first reaction gas or the second reaction gas can be selectively supplied to the reaction chamber 3, while the gas not utilized by the reaction chamber can be directly supplied downstream to the exhaust pipe D via the branch pipes a ', B' at a specific flow rate, whereby the pressure between the manifold C and the exhaust pipe D can be stabilized, and the different gases entering the reaction chamber before and after switching can be maintained at a uniform or desired flow rate.
Such a gas control strategy has a disadvantage of wasting the reaction gas because the gas is delivered to the exhaust pipe D via the branch pipes a ', B' downstream, respectively, when not utilized by the reaction chamber 3, and the remaining reaction gas in the reaction chamber 3 is exhausted as an exhaust gas.
Therefore, there is a need for improving the gas supply system and the gas switching method, and increasing the resource utilization.
Disclosure of Invention
The present invention is directed to a gas supply system and a method for providing gas switching to improve the problems of the prior art.
The present invention provides a gas supply system for supplying a gas to a reaction chamber performing a semiconductor process, the system comprising: a first gas source; the first main pipe is provided with an upstream end and a downstream end, and the upstream end of the first main pipe is connected with the first gas source; a first bypass tube bypassing between the upstream and downstream ends of the first main tube; the first main pipe, the first bypass pipe and the collecting pipe enable first gas to be selectively conveyed to the reaction cavity through the first main pipe and the collecting pipe in a downstream mode or to be circularly conveyed in a closed loop formed by the first main pipe and the first bypass pipe through a switching means.
The gas supply system has the beneficial effects that: the first main pipe, the first bypass pipe and the collecting pipe enable first gas to be selectively conveyed to the reaction cavity through the downstream of the first main pipe and the collecting pipe by means of a switching means, or to be circularly conveyed in a closed loop formed by the first main pipe and the first bypass pipe. Thus contributing to process stability.
Further, the circularly conveyed gas flow rate corresponds to the downstream conveyed gas flow rate.
Further, the downstream end and the upstream end of the first main pipe are respectively provided with a first main valve body and a second main valve body, the first bypass pipe is provided with a first bypass valve body, and when the first main valve body and the second main valve body are opened and the first bypass valve body is closed, the first gas is conveyed downstream; and when the first main valve body and the second main valve body are closed and the first bypass valve body is opened, the first gas is circularly conveyed.
Further, the first bypass pipe is provided with a first pump for controlling the flow rate of the circularly conveyed gas.
Further, the first main pipe is provided with a first monitoring component for monitoring the gas flow rate during the downstream conveying, and the first bypass pipe is provided with a second monitoring component for monitoring the gas flow rate during the circulating conveying.
Further, the gas supply system further comprises: a second gas source; a second main pipe having an upstream end and a downstream end, respectively connected to the second gas source and the collecting pipe; and a second bypass pipe bypassing between the upstream end and the downstream end of the second main pipe, wherein the second main pipe, the second bypass pipe and the collecting pipe are used for selectively conveying the second gas to the reaction cavity through the downstream of the second main pipe and the collecting pipe by another switching means, or circularly conveying the second gas in a closed loop formed by the second main pipe and the second bypass pipe.
Further, when the first gas is conveyed downstream, the second gas is conveyed in a circulating manner; when the first gas is recycled, the second gas is fed downstream.
Another object of the present invention is to provide a method for switching gas performed by the gas supply system, comprising: delivering a first gas downstream to the reaction chamber via the first main tube and the manifold; executing the switching means to stop the downstream delivery of the first gas to the manifold and to circulate the first gas through the first main pipe and the first bypass pipe; and conveying the second gas downstream from the reaction chamber via the manifold to complete gas switching.
Further, the method further comprises performing the switching means in reverse to stop downstream delivery of the second gas to the manifold, returning the first gas from the cyclical delivery back to downstream delivery.
Further, the first gas is returned from the circulation back to the downstream transport process, causing the first gas to return from the first bypass tube in a closed loop to the downstream transport formed by the first main tube and the manifold, thereby ensuring that all of the first gas is available to the reaction chamber.
Further, the method further comprises maintaining the downstream delivered gas flow rate and the cyclically delivered gas flow rate consistent, thereby stabilizing the flow rate of the first gas into the reaction chamber before and after switching.
Drawings
The invention may be further understood with reference to the following drawings and description. Non-limiting and non-exhaustive examples are described with reference to the following drawings. The elements in the drawings are not necessarily to actual dimensions; emphasis instead being placed upon illustrating the structure and principles.
FIG. 1 is a block diagram of a prior art gas supply system.
FIG. 2 is a schematic block diagram of a gas supply system according to the present invention.
FIG. 3 is a flow chart of a gas switching method according to the present invention.
Detailed Description
The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which specific example embodiments are shown by way of illustration. This claimed subject matter may, however, be embodied in many different forms and, therefore, the construction of contemplated or claimed subject matter is not limited to any of the example embodiments disclosed herein; the exemplary embodiments are merely illustrative. As such, the present invention is directed to providing a reasonably broad scope to claimed subject matter.
The appearances of the phrase "in one embodiment" in various places in the specification are not necessarily all referring to the same embodiment, nor are other embodiment(s) in the specification. It is intended that, for example, claimed subject matter include all or a combination of portions of example embodiments.
FIG. 2 shows an embodiment of the gas supply system of the present invention, which can supply at least two different gases via a switching means.
The gas supply system includes a first gas source and a second gas source, which supply a first gas and a second gas, respectively, which may be a reactive gas for deposition or etching or an inert gas for cleaning or as a carrier gas (carrier gas).
The first and second gas sources are connected to the first and second main pipes 7 and 8, respectively, so that the first and second gases can be transported downstream via the first and second main pipes 7 and 8, respectively.
The first main pipe 7 and the second main pipe 8 have a downstream end and an upstream end, respectively. The downstream ends of the first and second main pipes 7, 8 are connected to the upstream end of a manifold 9, while the upstream ends of the first and second main pipes 7, 8 are connected to the first and second gas sources, respectively. Specifically, the first main pipe 7 is connected to the collecting pipe 9 via a first main valve body and to a first gas source via a second main valve body, and the second main pipe 8 is connected to the collecting pipe 9 via a third main valve body and to a second gas source via a fourth main valve body. Whereby the first main pipe 7 and the collecting pipe 9 constitute a downstream transfer line for the first gas and the second main pipe 8 and the collecting pipe 9 constitute a downstream transfer line for the second gas.
The downstream end of the manifold 9 is connected to the reaction chamber to supply the first gas or the second gas to the reaction chamber.
The first main valve body is used for controlling whether the first gas is fed downstream to the manifold 9 or not, and the second main valve body is used for controlling whether the first gas is fed downstream to the first main pipe 7 or not. Likewise, a third main valve body is used to control whether the second gas is delivered downstream to the manifold 9 and a fourth main valve body is used to control whether the second gas is delivered downstream to the second main pipe 8.
The gas supply system of the present invention further comprises a first bypass pipe 7 'and a second bypass pipe 8'. The downstream end and the upstream end of the first bypass pipe 7 'are connected between the downstream end and the upstream end of the first main pipe 7, respectively, and the downstream end and the upstream end of the second bypass pipe 8' are connected between the downstream end and the upstream end of the second main pipe 8, respectively. Specifically, the upstream end of the first bypass pipe 7 'is connected to the downstream end of the second main valve body, the downstream end of the first bypass pipe 7' is connected to the upstream end of the first main valve body, the upstream end of the second bypass pipe 8 'is connected to the downstream end of the fourth main valve body, and the downstream end of the second bypass pipe 8' is connected to the upstream end of the third main valve body.
The first bypass pipe 7 'is provided with a first bypass valve body for controlling whether the first gas can pass through the first bypass pipe 7'. Likewise, the second bypass pipe 8 'is provided with a second bypass valve body for controlling whether the second gas can pass through the second bypass pipe 8'.
The first bypass duct 7 'is provided with a first pump which can be used to control the gas flow rate of the first gas in the first bypass duct 7'. Likewise, a second pump provided in the second bypass duct 8 'may be used to control the gas flow rate of the second gas in the second bypass duct 8'.
The first main pipe 7 and the first bypass pipe 7 'are provided with a first monitoring assembly and a second monitoring assembly, respectively, to monitor the gas flow rates of the first main pipe 7 and the first bypass pipe 7', respectively. Likewise, the third monitoring assembly and the fourth monitoring assembly are used for monitoring the gas flow rates of the second main pipe 8 and the second bypass pipe 8', respectively.
The gas supply system of the present invention can execute a switching means and a reverse switching means to switch the first gas or the second gas between downstream transportation and circulating transportation.
The downstream delivery means that the first gas is delivered to the reaction chamber via the first main pipe 7 and the header pipe 9 and does not pass through the first bypass pipe 7'. This may be achieved by opening the first main valve body and the second main valve body and closing the first bypass valve body. In other words, the downstream transport supplies gas to the process of the reaction chamber.
The circulating transportation means that the first gas continuously flows in a closed loop formed by the first main pipe 7 and the first bypass pipe 7', and does not enter the collecting pipe 9. This may be achieved by closing the first main valve body and the second main valve body and opening the first bypass valve body and the first pump. In other words, the cyclic delivery is performed when the gas is not utilized by the reaction chamber.
Preferably, the downstream delivered gas flow rate and the recycle delivered gas flow rate are consistent. In this way, when switching from downstream transport to circulating transport and back to downstream transport, the gas flow rates of downstream transport before and after switching can be ensured to be uniform. More specifically, this ensures that the initial gas flow rate into the reaction chamber is maintained within a desired range each time, contributing to process stability.
Since the configuration and switching means of the second gas are similar to those of the first gas, the description thereof will not be repeated.
FIG. 3 is a flow chart of a gas switching method of the present invention, comprising the steps of
In step S100, the first gas is delivered to the reaction chamber via the first main pipe 7 and the manifold 9 in response to a semiconductor process requirement. Wherein the semiconductor supply has the need to use different reactive gases, or only one gas, but not a continuous use. In other words, the semiconductor process has a need to switch gases, or intermittently use gases.
In step S101, switching means is performed to stop the downstream delivery of the first gas to the header pipe 9 and to circulate the first gas through the first main pipe 7 and the first bypass pipe 7'. Specifically, the switching means includes switching the first main valve body and the second main valve body from open to closed and opening the first bypass valve body. In this way, the first gas, which is originally conveyed downstream, is confined in the closed loop formed by the first main pipe 7 and the first bypass pipe 7', and the gas flow rate is maintained by the first pump. Accordingly, the reaction chamber simultaneously stops receiving the first gas.
Preferably, the first gas is maintained at a substantially uniform gas flow rate for both the recirculation delivery and downstream delivery. Specifically, the first monitoring assembly of the first main pipe 7 and the second monitoring assembly of the first bypass pipe 7' enable monitoring of the gas flow rate in real time and control of the first pump by known control means.
Step S102 may be performed in synchronization with step S101 or thereafter. The second gas is delivered downstream to the reaction chamber via manifold 9 to complete the gas switching. The second gas may be the second gas of fig. 2 or a different gas delivered by other lines. Taking fig. 2 as an example, the second gas is delivered to the reaction chamber downstream in this step via the second main pipe 8 and the manifold 9. Accordingly, the reaction gas starts to receive the second gas to perform a process different from that described in step S100.
Step S103, after finishing the related process of the second gas, before performing the related process of the first gas, performing a reverse switching means to stop downstream delivery of the second gas to the manifold 9, so that the first gas is returned from the circulation to the downstream delivery. The reverse switching means includes closing the third main valve body and the fourth main valve body and opening the second bypass valve body to convert the second gas from the downstream transport to the circulating transport, and opening the first main valve body and the second main valve body and closing the first bypass valve body to return the first gas from the circulating transport to the downstream transport. Because the first gas maintains the same air flow with the downstream conveying during the circulating conveying, the first gas can not generate excessive pressure drop in the process of pipeline switching, thereby ensuring the stable flow rate of the gas entering the reaction cavity.
Claims (11)
1. A gas supply system for providing gas switching for supplying gas to a reaction chamber for performing a semiconductor process, the system comprising:
a first gas source;
the first main pipe is provided with an upstream end and a downstream end, and the upstream end of the first main pipe is connected with the first gas source;
a first bypass tube bypassing between the upstream and downstream ends of the first main tube; a kind of electronic device with high-pressure air-conditioning system
A collecting pipe having an upstream end and a downstream end, wherein the upstream end of the collecting pipe is connected with the downstream end of the first main pipe, the downstream end of the collecting pipe is connected with the reaction cavity,
the first main pipe, the first bypass pipe and the collecting pipe enable first gas to be selectively conveyed to the reaction cavity through the downstream of the first main pipe and the collecting pipe through a switching means or to be circularly conveyed in a closed loop formed by the first main pipe and the first bypass pipe.
2. The gas supply system of claim 1, wherein the cyclically transported gas flow rate corresponds to the downstream transported gas flow rate.
3. The gas supply system of claim 2, wherein the downstream end and the upstream end of the first main pipe are provided with a first main valve body and a second main valve body, respectively, the first bypass pipe is provided with a first bypass valve body, and the first gas is delivered downstream when the first main valve body and the second main valve body are open and the first bypass valve body is closed; and when the first main valve body and the second main valve body are closed and the first bypass valve body is opened, the first gas is circularly conveyed.
4. A gas supply system according to claim 3, wherein the first bypass tube is provided with a first pump for controlling the flow rate of the cyclically transported gas.
5. The gas supply system of claim 4, wherein the first main pipe is provided with a first monitoring assembly for monitoring the flow rate of gas during the downstream delivery, and the first bypass pipe is provided with a second monitoring assembly for monitoring the flow rate of gas during the recycle delivery.
6. The gas supply system of claim 5, further comprising:
a second gas source;
a second main pipe having an upstream end and a downstream end, respectively connected to the second gas source and the collecting pipe; a kind of electronic device with high-pressure air-conditioning system
A second bypass pipe bypassing between the upstream end and the downstream end of the second main pipe,
the second main pipe, the second bypass pipe and the collecting pipe enable second gas to be selectively conveyed to the reaction cavity through the downstream of the second main pipe and the collecting pipe through another switching means, or to be circularly conveyed in a closed loop formed by the second main pipe and the second bypass pipe.
7. The gas supply system of claim 6, wherein when the first gas is delivered downstream, the second gas is delivered in a recycle; when the first gas is recycled, the second gas is fed downstream.
8. A method of gas switching performed by the gas supply system of claim 6, the method comprising:
delivering a first gas downstream to the reaction chamber via the first main tube and the manifold;
executing the switching means to stop the downstream delivery of the first gas to the manifold and to circulate the first gas through the first main pipe and the first bypass pipe; a kind of electronic device with high-pressure air-conditioning system
And delivering the second gas to the reaction cavity downstream through the collecting pipe so as to complete gas switching.
9. The method as recited in claim 8, further comprising:
the switching means is performed in reverse to stop downstream delivery of the second gas to the manifold, causing the first gas to be delivered from the cycle back to downstream delivery.
10. The method of claim 9, wherein the first gas is returned from the loop back to the downstream delivery process, causing the first gas to return from the first bypass tube in a closed loop to the downstream delivery formed by the first main tube and the header tube, thereby ensuring that all of the first gas is available to the reaction chamber.
11. The method of claim 10, further comprising:
and keeping the flow rate of the gas conveyed downstream and the flow rate of the gas conveyed circularly consistent, thereby stabilizing the flow rate of the first gas before and after switching into the reaction cavity.
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| CN202111523467.0A CN114151730B (en) | 2021-12-13 | 2021-12-13 | Gas supply system for providing gas switching and gas switching method |
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| CN202111523467.0A CN114151730B (en) | 2021-12-13 | 2021-12-13 | Gas supply system for providing gas switching and gas switching method |
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| CN114151730B true CN114151730B (en) | 2023-09-29 |
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