CN114151730A - Gas supply system providing gas switching and method of gas switching - Google Patents
Gas supply system providing gas switching and method of gas switching Download PDFInfo
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- CN114151730A CN114151730A CN202111523467.0A CN202111523467A CN114151730A CN 114151730 A CN114151730 A CN 114151730A CN 202111523467 A CN202111523467 A CN 202111523467A CN 114151730 A CN114151730 A CN 114151730A
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17D—PIPE-LINE SYSTEMS; PIPE-LINES
- F17D1/00—Pipe-line systems
- F17D1/02—Pipe-line systems for gases or vapours
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45593—Recirculation of reactive gases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Abstract
The invention discloses a gas supply system for providing gas switching, comprising: a first gas source; a first main tube having an upstream end and a downstream end, the upstream end of the first main tube being connected to the first gas source; a first bypass pipe bypassing between the upstream end and the downstream end of the first main pipe; and the collecting pipe is provided with an upstream end and a downstream end, the upstream end of the collecting pipe is connected with the downstream end of the first main pipe, and the downstream end of the collecting pipe is connected with the reaction cavity. The first main pipe, the first bypass pipe and the collecting pipe are used for selectively conveying the first gas to the reaction cavity through the first main pipe and the collecting pipe downstream or circulating through a closed loop formed by the first main pipe and the first bypass pipe by a switching means. In addition, the invention also provides a method for switching gas, which is executed by the gas supply system.
Description
Technical Field
The present invention relates to a gas supply system, and more particularly, to a gas supply system for a semiconductor processing apparatus, and more particularly, to a gas supply system for a reaction chamber and a gas switching method thereof.
Background
It is known that a reaction chamber in semiconductor fabrication can selectively use different gases to perform specific chemical reactions according to different process requirements. Gas supply systems are known that can supply and switch different reactant gases to the reaction chamber to perform such processes.
Fig. 1 illustrates a conventional gas supply system, which includes a first gas source 1 and a second gas source 2. The first gas source 1 is connected to the first main pipe a via a first flow control valve 11, and the second gas source 2 is connected to the second main pipe B via a second flow control valve 21. The first main pipe a and the second main pipe B are connected to a manifold C via a first main pipe valve 12 and a second main pipe valve 22, respectively, and the manifold C is connected downstream to the reaction chamber 3 to supply the first or second reaction gas. An exhaust system 4 is connected to the reaction chamber 3 for exhausting excess reaction gas. The first main pipe a is further connected to a first branch pipe a 'via a first branch line valve 13, and the second main pipe B is further connected to a second branch pipe B' via a second branch line valve 23. The first branch pipe a 'and the second branch pipe B' are merged with the exhaust pipe D via a pressure detector 5.
The gas supply system of fig. 1 may perform gas switching. By controlling these valve bodies 11, 12, 13, 21, 22, 23, the first reactive gas or the second reactive gas can be selectively supplied to the reaction chamber 3, and the gas not utilized by the reaction chamber can be directly supplied downstream to the exhaust pipe D at a specific flow rate via the branch pipes a ', B', whereby the pressure between the collecting pipe C and the exhaust pipe D can be stabilized, so that the different gases introduced into the reaction chamber before and after switching can be maintained at a uniform or desired flow rate.
Such a gas control strategy has the disadvantage of wasting the reaction gas, since the residual reaction gas, which is transported downstream of the branch pipes a ', B' to the exhaust pipe D and the reaction chamber 3, respectively, when the gas is not utilized by the reaction chamber 3, is exhausted as exhaust gas.
Therefore, it is necessary to improve the gas supply system and the gas switching method to improve the resource utilization.
Disclosure of Invention
The present invention is directed to a gas supply system and a method for gas switching that improves upon the problems of the prior art.
The present invention provides a gas supply system for supplying gas to a reaction chamber for performing a semiconductor process, the system comprising: a first gas source; a first main tube having an upstream end and a downstream end, the upstream end of the first main tube being connected to the first gas source; a first bypass pipe bypassing between the upstream end and the downstream end of the first main pipe; and the collecting pipe is provided with an upstream end and a downstream end, the upstream end of the collecting pipe is connected with the downstream end of the first main pipe, and the downstream end of the collecting pipe is connected with the reaction cavity, wherein the first main pipe, the first bypass pipe and the collecting pipe are used for selectively conveying the first gas to the reaction cavity through the first main pipe and the downstream of the collecting pipe or circulating and conveying the first gas through a closed loop formed by the first main pipe and the first bypass pipe by a switching means.
The gas supply system has the advantages that: the first main pipe, the first bypass pipe and the collecting pipe are used for selectively conveying the first gas to the reaction cavity through the first main pipe and the collecting pipe downstream or circulating through a closed loop formed by the first main pipe and the first bypass pipe by a switching means. In this way, process stability is facilitated.
Further, the gas flow rate of the circular delivery corresponds to the gas flow rate of the downstream delivery.
Further, a downstream end and an upstream end of the first main pipe are respectively provided with a first main valve body and a second main valve body, the first bypass pipe is provided with a first bypass valve body, and when the first main valve body and the second main valve body are opened and the first bypass valve body is closed, the first gas is delivered for the downstream; when the first main valve body and the second main valve body are closed and the first bypass valve body is opened, the first gas is circularly conveyed.
Further, the first bypass pipe is provided with a first pump for controlling the flow rate of the gas to be circulated.
Further, the first main pipe is provided with a first monitoring assembly for monitoring the gas flow rate during the downstream transportation, and the first bypass pipe is provided with a second monitoring assembly for monitoring the gas flow rate during the circulating transportation.
Further, the gas supply system further comprises: a second gas source; the second main pipe is provided with an upstream end and a downstream end and is respectively connected with the second gas source and the collecting pipe; and a second bypass pipe bypassing between the upstream end and the downstream end of the second main pipe, wherein the second main pipe, the second bypass pipe and the collecting pipe selectively transport the second gas to the reaction chamber through the second main pipe and the collecting pipe downstream or circulate in a closed loop formed by the second main pipe and the second bypass pipe by another switching means.
Further, when the first gas is delivered downstream, the second gas is delivered in a cycle; when the first gas is delivered in a cycle, the second gas is delivered downstream.
Another object of the present invention is to provide a method for gas switching performed by the gas supply system, comprising: delivering a first gas downstream to the reaction chamber via the first main tube and the manifold; executing the switching means to stop the conveyance of the first gas downstream to the manifold pipe and to circulate the first gas through the first main pipe and the first bypass pipe; and conveying the second gas to the reaction cavity through the collecting pipe and the downstream to complete gas switching.
Further, the method may further comprise reversing the switching means to stop the downstream delivery of the second gas to the manifold and to cause the first gas to be delivered from the loop back to the downstream delivery.
Further, the transfer of the first gas from the circulation back to the downstream transfer process returns the first gas from the first bypass pipe in a closed loop back to the downstream transfer formed by the first main pipe and the manifold, thereby ensuring that all of the first gas is available to the reaction chamber.
Further, the method further comprises maintaining a uniform flow rate of the downstream delivered gas and the cyclically delivered gas, thereby stabilizing the flow rate of the first gas into the reaction chamber before and after switching.
Drawings
The invention can be further understood with reference to the following drawings and description. Non-limiting and non-exhaustive examples are described with reference to the following figures. The components in the drawings are not necessarily to scale; emphasis instead being placed upon illustrating the structures and principles.
FIG. 1 is a block diagram of a prior art gas supply system.
FIG. 2 is a block diagram of a gas supply system according to the present invention.
FIG. 3 is a flow chart of the gas switching method of the present invention.
Detailed Description
The present invention now will be described more fully hereinafter with reference to the accompanying drawings, in which specific exemplary embodiments are shown by way of illustration. The claimed subject matter may, however, be embodied in many different forms and should not be construed as limited to any example embodiments set forth herein; the exemplary embodiments are merely illustrative. As such, this invention is intended to provide a reasonably broad scope of coverage to the claimed subject matter as claimed or as covered thereby.
The word "in one embodiment" used in this specification does not necessarily refer to the same embodiment, and the word "in other embodiment(s)" used in this specification does not necessarily refer to different embodiment(s). It is intended that, for example, claimed subject matter include all or a portion of the exemplary embodiments in combination.
FIG. 2 shows an embodiment of the gas supply system of the present invention, which can supply at least two different gases via a switching means.
The gas supply system includes a first gas source and a second gas source, which supply a first gas and a second gas, respectively, which may be a reaction gas for deposition or etching or an inert gas for cleaning or as a carrier gas (carrier gas).
The first gas source and the second gas source are connected to the first main pipe 7 and the second main pipe 8, respectively, so that the first gas and the second gas can be delivered downstream via the first main pipe 7 and the second main pipe 8, respectively.
The first main pipe 7 and the second main pipe 8 have a downstream end and an upstream end, respectively. The downstream ends of the first main pipe 7 and the second main pipe 8 are connected to the upstream end of a manifold 9, and the upstream ends of the first main pipe 7 and the second main pipe 8 are connected to a first gas source and a second gas source, respectively. In particular, the first main pipe 7 is connected via a first main valve body to the manifold 9 and via a second main valve body to a first gas source, and the second main pipe 8 is connected via a third main valve body to the manifold 9 and via a fourth main valve body to a second gas source. The first main pipe 7 and the manifold 9 thereby constitute a downstream feed line for the first gas, and the second main pipe 8 and the manifold 9 constitute a downstream feed line for the second gas.
The downstream end of the manifold 9 is connected to the reaction chamber to supply the first gas or the second gas to the reaction chamber.
The first main valve body is used for controlling whether the first gas is conveyed to the collecting pipe 9 or not, and the second main valve body is used for controlling whether the first gas is conveyed to the first main pipe 7 or not. Likewise, the third main valve element is used to control whether the second gas is fed downstream to the collecting line 9, and the fourth main valve element is used to control whether the second gas is fed downstream to the second main line 8.
The gas supply system of the present invention further comprises a first bypass pipe 7 'and a second bypass pipe 8'. The downstream end and the upstream end of the first bypass pipe 7 'are connected between the downstream end and the upstream end of the first main pipe 7, respectively, and the downstream end and the upstream end of the second bypass pipe 8' are connected between the downstream end and the upstream end of the second main pipe 8, respectively. Specifically, the upstream end of the first bypass pipe 7 'is connected to the downstream end of the second main valve body, the downstream end of the first bypass pipe 7' is connected to the upstream end of the first main valve body, the upstream end of the second bypass pipe 8 'is connected to the downstream end of the fourth main valve body, and the downstream end of the second bypass pipe 8' is connected to the upstream end of the third main valve body.
The first bypass pipe 7 'is provided with a first bypass valve body for controlling whether the first gas can pass through the first bypass pipe 7'. Likewise, the second bypass pipe 8 'is provided with a second bypass valve body for controlling whether the second gas can pass through the second bypass pipe 8'.
The first bypass pipe 7 'is provided with a first pump which can be used to control the gas flow rate of the first gas in the first bypass pipe 7'. Likewise, a second pump provided in the second bypass duct 8 'may be used to control the gas flow rate of the second gas in the second bypass duct 8'.
The first main pipe 7 and the first bypass pipe 7 'are provided with a first monitoring assembly and a second monitoring assembly, respectively, to monitor the gas flow rates of the first main pipe 7 and the first bypass pipe 7', respectively. Likewise, a third monitoring assembly and a fourth monitoring assembly for monitoring the gas flow rate of the second main pipe 8 and the second bypass pipe 8', respectively.
The gas supply system of the present invention can perform a switching means and a reverse switching means to switch the first gas or the second gas between downstream delivery and cyclic delivery.
The downstream transportation means that the first gas is transported to the reaction chamber through the first main pipe 7 and the collecting pipe 9, and does not pass through the first bypass pipe 7'. This may be accomplished by opening the first and second main valve bodies and closing the first bypass valve body. In other words, the downstream transport supplies gas to the process of the reaction chamber.
The circulation transfer means that the first gas continuously flows in a closed loop formed by the first main pipe 7 and the first bypass pipe 7' without entering the collecting pipe 9. This can be achieved by closing the first main valve body and the second main valve body and opening the first bypass valve body and the first pump. In other words, the cyclic delivery is performed when the gas is not utilized by the reaction chamber.
Preferably, the flow rate of the gas delivered downstream and the flow rate of the gas delivered cyclically are identical. In this way, when switching from downstream conveyance to circulation conveyance and then switching back to downstream conveyance, it is possible to ensure that the flow rates of the gas conveyed downstream before and after switching are the same. More specifically, this ensures that the initial gas flow rate into the reaction chamber is maintained within a desired range each time, contributing to process stability.
Since the configuration and switching means of the second gas are similar to those of the first gas, they are not described in detail.
FIG. 3 is a flow chart of the gas switching method of the present invention, comprising steps
In step S100, a first gas is delivered to the reaction chamber through the first main pipe 7 and the downstream of the collecting pipe 9 according to a semiconductor process requirement. Wherein the semiconductor supply has a need to use different reactive gases, or alternatively, only one gas is used, but not a continuous use. In other words, the semiconductor process has a need to switch gases, or intermittently use gases.
In step S101, switching means is performed to stop the downstream delivery of the first gas to the manifold 9 and to circulate the first gas through the first main pipe 7 and the first bypass pipe 7'. Specifically, the switching means includes switching the first main valve body and the second main valve body from open to closed, and opening the first bypass valve body. In this way, the first gas originally delivered downstream is confined in the closed loop formed by the first main pipe 7 and the first bypass pipe 7', and the gas flow rate is maintained by the first pump. Accordingly, the reaction chamber simultaneously stops receiving the first gas.
Preferably, the gas flow rates of the first gas in the circulating delivery and the downstream delivery are substantially the same. In particular, the first monitoring assembly of the first main pipe 7 and the second monitoring assembly of the first bypass pipe 7' allow to monitor the gas flow rate in real time and to control the first pumping by known control means.
Step S102 may be performed in synchronization with step S101, or may be performed thereafter. The second gas is delivered to the reaction chamber downstream via manifold 9 to complete the gas switching. The second gas may here be the second gas of fig. 2 or a different gas conveyed in another pipeline. Taking fig. 2 as an example, the second gas is delivered to the reaction chamber downstream in this step via the second main pipe 8 and the manifold 9. Accordingly, the reaction gas starts to receive the second gas to perform a process different from that described in step S100.
Step S103, after the process relating to the second gas is finished, before the process relating to the first gas is performed, a reverse switching means is performed to stop the downstream transportation of the second gas to the manifold 9, so that the first gas is transported from the circulation back to the downstream transportation. The reverse switching means comprises closing the third main valve body and the fourth main valve body and opening the second bypass valve body to switch the second gas from downstream delivery to circular delivery, and opening the first main valve body and the second main valve body and closing the first bypass valve body to return the first gas from circular delivery to downstream delivery. Because the first gas maintains the same airflow as that in the downstream conveying process during the circulating conveying process, the first gas cannot generate overlarge pressure drop in the pipeline switching process, and the stable flow velocity of the gas entering the reaction cavity is ensured.
Claims (11)
1. A gas supply system for providing gas switching for supplying a gas to a reaction chamber for performing a semiconductor process, the system comprising:
a first gas source;
a first main tube having an upstream end and a downstream end, the upstream end of the first main tube being connected to the first gas source;
a first bypass pipe bypassing between the upstream end and the downstream end of the first main pipe; and
a collecting pipe which is provided with an upstream end and a downstream end, the upstream end of the collecting pipe is connected with the downstream end of the first main pipe, the downstream end of the collecting pipe is connected with the reaction cavity,
wherein the first main pipe, the first bypass pipe and the collecting pipe are switched by a switching means so that the first gas is selectively delivered to the reaction chamber through the first main pipe and the collecting pipe downstream or is circularly delivered through a closed loop formed by the first main pipe and the first bypass pipe.
2. The gas supply system of claim 1, wherein the recirculated delivered gas flow rate is equivalent to the downstream delivered gas flow rate.
3. The gas supply system according to claim 2, wherein the downstream end and the upstream end of the first main pipe are provided with a first main valve body and a second main valve body, respectively, and the first bypass pipe is provided with a first bypass valve body, and when the first main valve body and the second main valve body are opened and the first bypass valve body is closed, the first gas is supplied to the downstream; when the first main valve body and the second main valve body are closed and the first bypass valve body is opened, the first gas is circularly conveyed.
4. The gas supply system of claim 3, wherein the first bypass line is provided with a first pump for controlling a flow rate of the gas to be circulated.
5. The gas supply system of claim 4, wherein the first main pipe is provided with a first monitoring assembly for monitoring the gas flow rate during the downstream delivery, and the first bypass pipe is provided with a second monitoring assembly for monitoring the gas flow rate during the cyclical delivery.
6. The gas supply system of claim 5, further comprising:
a second gas source;
the second main pipe is provided with an upstream end and a downstream end and is respectively connected with the second gas source and the collecting pipe; and
a second bypass pipe bypassing between the upstream end and the downstream end of the second main pipe,
wherein the second main pipe, the second bypass pipe and the collecting pipe are switched by another switching means so that the second gas is selectively transported to the reaction chamber through the second main pipe and the collecting pipe downstream or circulated in a closed loop formed by the second main pipe and the second bypass pipe.
7. The gas supply system of claim 6, wherein the second gas is delivered in a cycle when the first gas is delivered downstream; when the first gas is delivered in a cycle, the second gas is delivered downstream.
8. A method of gas switching performed by the gas supply system of claim 1, comprising:
delivering a first gas downstream to the reaction chamber via the first main tube and the manifold;
executing the switching means to stop the conveyance of the first gas downstream to the manifold pipe and to circulate the first gas through the first main pipe and the first bypass pipe; and
and conveying a second gas to the reaction cavity through the collecting pipe and the downstream to complete gas switching.
9. The method of claim 8, further comprising:
the switching means is reversed to stop downstream delivery of the second gas to the manifold and to cause the first gas to be delivered from the cycle back to downstream delivery.
10. The method of claim 9, wherein the transporting of the first gas from the loop back to the downstream transport returns the first gas from the first bypass pipe in a closed loop back to the downstream transport formed by the first main pipe and the manifold, thereby ensuring that all of the first gas is available to the reaction chamber.
11. The method of claim 10, further comprising:
the flow rate of the gas conveyed downstream and the flow rate of the gas conveyed in the circulation are kept consistent, so that the flow rate of the first gas entering the reaction cavity before and after switching is stabilized.
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| CN202111523467.0A CN114151730B (en) | 2021-12-13 | 2021-12-13 | Gas supply system for providing gas switching and gas switching method |
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| CN202111523467.0A CN114151730B (en) | 2021-12-13 | 2021-12-13 | Gas supply system for providing gas switching and gas switching method |
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