CN114142333A - Pulse laser and application thereof - Google Patents
Pulse laser and application thereof Download PDFInfo
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- CN114142333A CN114142333A CN202111193308.9A CN202111193308A CN114142333A CN 114142333 A CN114142333 A CN 114142333A CN 202111193308 A CN202111193308 A CN 202111193308A CN 114142333 A CN114142333 A CN 114142333A
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- 238000005086 pumping Methods 0.000 claims abstract description 20
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 6
- 229910052688 Gadolinium Inorganic materials 0.000 claims abstract description 3
- 229910052765 Lutetium Inorganic materials 0.000 claims abstract description 3
- 229910052706 scandium Inorganic materials 0.000 claims abstract description 3
- 239000013078 crystal Substances 0.000 claims description 41
- 239000004065 semiconductor Substances 0.000 claims description 14
- 238000002834 transmittance Methods 0.000 claims description 13
- 229910052594 sapphire Inorganic materials 0.000 claims description 7
- 239000010980 sapphire Substances 0.000 claims description 7
- 229910026161 MgAl2O4 Inorganic materials 0.000 claims description 5
- 229910052596 spinel Inorganic materials 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 239000004568 cement Substances 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 238000001514 detection method Methods 0.000 abstract description 5
- 238000005259 measurement Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 4
- 239000005365 phosphate glass Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 238000006467 substitution reaction Methods 0.000 description 4
- KWMNWMQPPKKDII-UHFFFAOYSA-N erbium ytterbium Chemical compound [Er].[Yb] KWMNWMQPPKKDII-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1608—Solid materials characterised by an active (lasing) ion rare earth erbium
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/484—Transmitters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
- H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1618—Solid materials characterised by an active (lasing) ion rare earth ytterbium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/1666—Solid materials characterised by a crystal matrix borate, carbonate, arsenide
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Computer Networks & Wireless Communication (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Lasers (AREA)
Abstract
The application discloses a 1.55-micron pulse laser and application thereof, wherein the laser comprises a pumping source, an input mirror, a gain medium, a Q-switching element and an output mirror; the pumping source, the input mirror, the gain medium, the Q-switching element and the output mirror are coaxially arranged along the light path in sequence; the gain medium comprises ErxYbyR(1‑x‑y)Al3(BO3)4Wherein x is 0.5 to 3.0 at.%, Y is 5 to 30 at.%, and R is at least one of Sc, Y, Gd, and Lu elements, and hasHigh thermal conductivity, high pulse repetition frequency and improved stability of output laser. The pump source is in a pulse working mode, the pump pulse period is 2-100 ms, and the pump pulse width is 0.05-3 ms. The pulse laser is used as a detection light source of the portable laser range finder, has high scanning speed and large data volume of received signals, greatly improves the measurement precision of the range finder and expands the application range of the range finder.
Description
Technical Field
The application relates to a pulse laser and application thereof, in particular to a micro pulse laser with a 1.55-micron waveband for human eye safety, belonging to the technical field of laser devices.
Background
The human eye safety 1.55 micron wave band laser range finder is widely applied to the fields of remote sensing, measurement, military and the like. The portable laser range finder needs a 1.55-micron waveband solid pulse laser which is miniaturized, low in cost and stable in performance to output a detection beam. To accurately measure targets over distances of several kilometers, pulsed lasers should have high peak powers on the order of ten thousand watts, narrow pulse widths on the order of nanoseconds, and good output beam quality. At present, the passively Q-switched erbium ytterbium double-doped phosphate glass micro laser can realize high peak output power and narrow pulse width, and is widely used as a detection beam of a 1.55-micron waveband portable laser range finder. However, due to the low thermal conductivity of phosphate glass (about 0.8 Wm)-1K-1) The resulting severe thermal effect, the pulse repetition rate of erbium ytterbium co-doped phosphate glass lasers is typically relatively low (typically 10Hz) at high peak power operation. The high repetition frequency can realize high scanning speed and increase the data volume of received signals, thereby greatly improving the measurement precision of the distance meter and expanding the application range of the distance meter. Therefore, there is a need for a laser rangefinder that can operate at a hundred hertz repetition rate with a high peak power 1.55 micron micro-pulsed laser.
Disclosure of Invention
The application provides a miniature pulse laser of human eye safe 1.55 micron wave band with hundred hertz level repetition frequency, ten thousand watt level peak power and nanosecond pulse width, can solve the problem that present this portable laser range finder of wave band surveys light beam pulse repetition frequency low.
According to one aspect of the present application, there is provided a 1.55 micron pulsed laser comprising a pump source, an input mirror, a gain medium, a Q-switching element and an output mirror;
the pumping source, the input mirror, the gain medium, the Q-switching element and the output mirror are coaxially arranged along a light path in sequence;
the gain medium comprises ErxYbyR(1-x-y)Al3(BO3)4Wherein x is 0.5 to 3.0 at.%, Y is 5 to 30 at.%, and R is at least one of Sc, Y, Gd, and Lu elements;
the pumping source adopts a pulse working mode, the pumping pulse period is 2-100 ms, and the pumping pulse width is 0.05-3 ms;
the initial transmittance of the Q-switching element at a 1.55-micron wave band is 80-95%;
the transmittance of the output mirror at a 1.55-micron wave band is 10-30%.
The total loss of the laser with the wave band of 1.55 microns after passing through the Q-switching element and the output mirror is 15-40%.
The input mirror, the gain medium, the Q-switching element and the output mirror are combined in a mode of optical cement (surface coating and pressurizing heating after crystal polishing) or bonding (direct heating and pressurizing after crystal polishing).
The pulse laser comprises a focusing coupling mirror, wherein the focusing coupling mirror is arranged between the pumping source and the input mirror and is used for focusing emergent light of the pumping source on the gain medium. The gain medium is arranged near a focusing point of the pump light and does not exceed the Rayleigh length range of the pump source emergent light beam, and the diameter of a waist spot of the pump laser in the gain medium is 100-350 micrometers.
The pumping source is a semiconductor laser; the pump source can generate 976nm or 940 nm waveband laser.
The transmittance of the input mirror at a 976nm or 940 nm laser wave band is higher than 90%, and the transmittance at a 1.55-micron wave band is lower than 0.5%.
The Q-switching element comprises Co2+:MgAl2O4And (4) crystals.
The input mirror is a sapphire crystal or RAl with an input dielectric film plated on the end face3(BO3)4A crystal;
the output mirror is a sapphire crystal or RAl with an output dielectric film plated on the end face3(BO3)4And (4) crystals.
Optionally, the gain medium comprises an input end face; the input mirror is an input end face of a gain medium plated with an input dielectric film;
the Q-switching element comprises an output end surface;
the output mirror is an output end face of the Q-switched element plated with an output dielectric film.
According to one aspect of the application, there is provided a use of the pulsed laser described above as a portable laser rangefinder.
The beneficial effects that this application can produce include:
er is adopted in the present applicationxYbyR(1-x-y)Al3(BO3)4The crystal is used as a gain medium of the 1.55 micron waveband micro pulse laser. Compared with the erbium-ytterbium double-doped phosphate glass which is widely applied at present, the crystal has higher thermal conductivity than the glass, can realize higher pulse repetition frequency and improve the stability of output laser. The miniature pulse laser is used as a detection light source of the portable laser range finder, so that high scanning speed can be realized, and the data volume of received signals is increased, thereby greatly improving the measurement precision of the range finder and expanding the application range of the range finder.
Detailed Description
The present application will be described in detail with reference to examples, but the present application is not limited to these examples.
The detection method in the embodiment of the application is as follows: the pulse laser energy is measured by a laser energy meter (a probe model is PE9-C, a gauge head model is Centauri, and the probe model is all products of Ophir-Spiricon company); the pulse laser repetition frequency and pulse width were measured using an oscilloscope (photodetector model number DET08C from Thorlabs, inc., oscilloscope model number DSO6102A from Agilent) and the pulse peak power was the pulse energy divided by the pulse width.
In the embodiment of the present application, the pump source, Co2+:MgAl2O4Crystal, sapphire crystal, ErxYbyR(1-x-y)Al3(BO3)4、RAl3(BO3)4The crystal, input mirror and output mirror are all commercially available.
Example 1
976nm semiconductor laser pumping Er0.015Yb0.12Y0.865Al3(BO3)4The crystal realizes 1.52 mu m micro pulse laser with 100Hz repetition frequency, 25kW peak output power and 1.9ns pulse width. The method comprises the following specific steps:
adding Er0.015Yb0.12Y0.865Al3(BO3)4The cut section of the crystal is 3 multiplied by 3mm2And c, cutting a block sample with the thickness of 1.5mm in the light passing direction, and performing laser level polishing on the light passing end face of the block crystal sample. The Q-switching element adopts Co2+:MgAl2O4Crystal with a light-transmitting cross section of 3X 3mm2The thickness of the crystal in the light passing direction is 1.5mm, the light passing end face is subjected to laser-level polishing, and the initial transmittance of the Q-switched crystal at 1.52 microns is 90%. The input dielectric film is coated on a piece of transparent section with the thickness of 3 multiplied by 3mm2And the end face of the sapphire crystal with the thickness of 1.0mm in the light transmission direction is used as an input mirror, the transmittance T of the input mirror at the wavelength of 976nm is more than or equal to 90 percent, and the transmittance T at the wavelength of 1.52 mu m is less than or equal to 0.1 percent. The output dielectric film is coated on another block with a light-transmitting section of 3 multiplied by 3mm2And a sapphire crystal end face having a thickness of 1.0mm in the light-transmitting direction as an output mirror, the output mirror having a transmittance T of 15% at a wavelength of 1.52 μm. The total loss of the 1.52 μm wavelength laser after Q-switched crystal and output mirror is about 25%. The input mirror, the gain medium, the Q-switched crystal and the output mirror are sequentially attached together in an optical cement mode and then fixed on a copper base with a light through hole in the middle. The pumping source adopts a pulse generatorThe 976nm semiconductor laser as a mode has a pump pulse period of 10ms and a pump pulse width of 0.5ms, and is focused into a gain medium via a focusing coupling mirror, wherein the diameter of a waist spot of the pump laser in the gain medium is 260 microns. Er pumped by using the semiconductor laser end face0.015Yb0.12Y0.865Al3(BO3)4The crystal is pumped by 25W peak incident power to obtain 1.52 mu m micro pulse laser with 100Hz repetition frequency, 25kW peak output power and 1.9ns pulse width.
Example 2
976nm semiconductor laser pumping Er0.015Yb0.12Y0.865Al3(BO3)4The crystal realizes 1.52 mu m micro pulse laser with 200Hz repetition frequency, 19kW peak output power and 2.0ns pulse width. The method comprises the following specific steps:
the pump pulse period of the 976nm semiconductor laser in example 1 was adjusted to 5ms, the pump pulse width was adjusted to 0.3ms, and the diameter of the waist spot of the pump laser in the gain medium was adjusted to 200 μm. Er pumped by using the semiconductor laser end face0.015Yb0.12Y0.865Al3(BO3)4The crystal is pumped by 26W peak incident power to obtain 1.52 mu m micro pulse laser with the repetition frequency of 200Hz, the peak output power of 19kW and the pulse width of 2.0 ns.
Example 3
976nm semiconductor laser pumping Er0.015Yb0.12Y0.865Al3(BO3)4The crystal realizes 1.52 mu m micro pulse laser with 50Hz repetition frequency, 15kW peak output power and 2.0ns pulse width. The method comprises the following specific steps:
the pump pulse period of the 976nm semiconductor laser in example 1 was adjusted to 20ms, the pump pulse width was adjusted to 2.0ms, and the diameter of the waist spot of the pump laser in the gain medium was adjusted to 200 μm. Er pumped by using the semiconductor laser end face0.015Yb0.12Y0.865Al3(BO3)4The crystal obtains 50Hz repetition frequency and 15kW peak output power under the pumping of 13W peak incident power1.52 μm micro-pulsed laser at a rate and 2.0ns pulse width.
Example 4
976nm semiconductor laser pumping Er0.015Yb0.12Y0.865Al3(BO3)4The crystal realizes 1.59 mu m micro pulse laser with 100Hz repetition frequency, 9kW peak output power and 4.5ns pulse width. The method comprises the following specific steps:
the pump pulse width of the 976nm semiconductor laser in example 1 was adjusted to 0.3ms, the diameter of the pump laser waist spot in the gain medium was adjusted to 200 μm, and Co having an initial transmittance of 95% at 1.59 μm was used2+:MgAl2O4The crystal is used as a Q-switching element. Er pumped by using the semiconductor laser end face0.015Yb0.12Y0.865Al3(BO3)4The crystal is pumped by 22W peak incident power to obtain 1.59 mu m micro pulse laser with 100Hz repetition frequency, 9kW peak output power and 4.5ns pulse width.
Example 5
Adding Er0.01Yb0.2Lu0.79Al3(BO3)4Crystal substitution for Er in examples 1 to 40.015Yb0.12Y0.865Al3(BO3)4The crystal and the experimental result are similar to those of examples 1-4.
Example 6
Adding Er0.02Yb0.15Gd0.83Al3(BO3)4Crystal substitution for Er in examples 1 to 40.015Yb0.12Y0.865Al3(BO3)4The crystal and the experimental result are similar to those of examples 1-4.
Comparative example 1
Adding Er0.004Yb0.04Y0.956Al3(BO3)4Crystal substitution for Er in examples 1 to 40.015Yb0.12Y0.865Al3(BO3)4Crystal, which can not realize pulse laser operation; the effects of examples 1 to 4 could not be reproduced.
Although the present application has been described with reference to a few embodiments, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the application as defined by the appended claims.
Claims (10)
1. A1.55 micron pulse laser is characterized by comprising a pumping source, an input mirror, a gain medium, a Q-switching element and an output mirror;
the pumping source, the input mirror, the gain medium, the Q-switching element and the output mirror are coaxially arranged along a light path in sequence;
the gain medium comprises ErxYbyR(1-x-y)Al3(BO3)4Wherein x is 0.5 to 3.0 at.%, Y is 5 to 30 at.%, and R is at least one of Sc, Y, Gd, and Lu elements;
the pumping source adopts a pulse working mode, the pumping pulse period is 2-100 ms, and the pumping pulse width is 0.05-3 ms;
the initial transmittance of the Q-switching element at a 1.55-micron wave band is 80-95%;
the transmittance of the output mirror at a 1.55-micron wave band is 10-30%.
2. The pulsed laser of claim 1, wherein the loss of 1.55 μm band laser light after passing through said Q-switching element and said output mirror adds up to 15% to 40%.
3. The pulsed laser of claim 1, wherein said input mirror, gain medium, Q-switching element and output mirror are combined using optical cement or bonding.
4. The pulsed laser of claim 1, comprising a focusing coupling mirror disposed between said pump source and said input mirror for focusing the output light of said pump source onto said gain medium.
5. The pulsed laser of claim 1, wherein said pump source is a semiconductor laser; the pump source can generate 976nm or 940 nm waveband laser.
6. The pulsed laser of claim 1, wherein said input mirror has a transmittance of greater than 90% at a laser wavelength of 976nm or 940 nm and a transmittance of less than 0.5% at a wavelength of 1.55 μm.
7. The pulsed laser of claim 1, wherein said Q-switching element comprises Co2+:MgAl2O4And (4) crystals.
8. The pulsed laser of claim 1, wherein said input mirror is a sapphire crystal or RAl coated with an input dielectric film on its facet3(BO3)4A crystal;
the output mirror is a sapphire crystal or RAl with an output dielectric film plated on the end face3(BO3)4And (4) crystals.
9. The pulsed laser of claim 1, wherein said gain medium comprises an input facet; the input mirror is an input end face of a gain medium plated with an input dielectric film;
the Q-switching element comprises an output end surface;
the output mirror is an output end face of the Q-switched element plated with an output dielectric film.
10. Use of a pulsed laser according to any one of claims 1 to 9 as a portable laser rangefinder.
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| CN202111193308.9A CN114142333A (en) | 2021-10-13 | 2021-10-13 | Pulse laser and application thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114374141A (en) * | 2021-12-15 | 2022-04-19 | 中国科学院福建物质结构研究所 | 1.55 mu m pulse laser and application thereof |
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| JP2004186608A (en) * | 2002-12-06 | 2004-07-02 | Central Glass Co Ltd | OPTICAL AMPLIFIER, LASER OSCILLATOR, OR OPTICAL SOURCE FOR 1.45 TO 1.65mum-BAND |
| CN101165978A (en) * | 2006-10-16 | 2008-04-23 | 中国科学院福建物质结构研究所 | 1.5-1.6mum wave band laser using erbium and ytterbium ion doped boro-ahuminate crystal as gain medium |
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| CN104577701A (en) * | 2015-01-29 | 2015-04-29 | 中国科学院福建物质结构研究所 | Erbium and ytterbium co-doped phosphate crystal laser device with wave bands of 1.55 micrometers |
| CN106532423A (en) * | 2016-12-15 | 2017-03-22 | 中国科学院福建物质结构研究所 | Resonance pumping 1.5-1.6 micron waveband solid-state laser |
| CN111370988A (en) * | 2020-04-17 | 2020-07-03 | 中国科学院福建物质结构研究所 | 1.55 mu m wave band Q-switched pulse laser |
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2021
- 2021-10-13 CN CN202111193308.9A patent/CN114142333A/en active Pending
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|---|---|---|---|---|
| JP2004186608A (en) * | 2002-12-06 | 2004-07-02 | Central Glass Co Ltd | OPTICAL AMPLIFIER, LASER OSCILLATOR, OR OPTICAL SOURCE FOR 1.45 TO 1.65mum-BAND |
| CN101165978A (en) * | 2006-10-16 | 2008-04-23 | 中国科学院福建物质结构研究所 | 1.5-1.6mum wave band laser using erbium and ytterbium ion doped boro-ahuminate crystal as gain medium |
| CN103972784A (en) * | 2014-04-09 | 2014-08-06 | 中国科学院福建物质结构研究所 | 1.5-1.6-micron waveband thin-disk laser |
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| CN114374141A (en) * | 2021-12-15 | 2022-04-19 | 中国科学院福建物质结构研究所 | 1.55 mu m pulse laser and application thereof |
| CN114374141B (en) * | 2021-12-15 | 2023-06-09 | 中国科学院福建物质结构研究所 | 1.55 mu m pulse laser and application thereof |
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