CN114374141B - 1.55 mu m pulse laser and application thereof - Google Patents
1.55 mu m pulse laser and application thereof Download PDFInfo
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- CN114374141B CN114374141B CN202111539692.3A CN202111539692A CN114374141B CN 114374141 B CN114374141 B CN 114374141B CN 202111539692 A CN202111539692 A CN 202111539692A CN 114374141 B CN114374141 B CN 114374141B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1608—Solid materials characterised by an active (lasing) ion rare earth erbium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1618—Solid materials characterised by an active (lasing) ion rare earth ytterbium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/1655—Solid materials characterised by a crystal matrix silicate
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A90/00—Technologies having an indirect contribution to adaptation to climate change
- Y02A90/10—Information and communication technologies [ICT] supporting adaptation to climate change, e.g. for weather forecasting or climate simulation
Abstract
The application discloses a 1.55 μm band pulse laser employing (Er x Yb y Lu (1‑x‑y) ) 2 Si 2 O 7 The crystal acts as a gain medium, where x=0.3-2.0 at.%, y=3-20 at.%. The application also discloses a light source of the laser range finder, wherein the light source is the 1.55 mu m pulse laser. The eye-safe 1.55 mu m-band miniature pulse laser has hundred-hertz level repetition frequency, hundred-micro-focus level pulse energy and nanosecond level pulse width, and can solve the problem that the pulse repetition frequency of the detection beam of the existing band laser range finder is low.
Description
Technical Field
The application relates to a pulse laser and application thereof, in particular to a high-energy miniature pulse laser with a band of 1.55 mu m for human eye safety, belonging to the technical field of laser devices.
Background
The eye-safe 1.55 mu m wave band laser range finder is widely applied to the fields of remote sensing, measurement, military and the like. The laser range finder needs a miniaturized, low-cost and stable-performance 1.55 μm band solid pulse laser to output the probe beam. In order to accurately measure targets within a distance of a few kilometers, pulsed lasers should have high pulse energies in the order of hundred micro-joules, narrow pulse widths in the order of nanoseconds, and good beam quality. At present, erbium-ytterbium double-doped phosphate glass is used as a gain medium, so that passive Q-switched micro pulse laser with energy of more than 100 micro-joules and width of a few nanoseconds can be realized, and the laser can be widely used as a detection beam of a 1.55 mu m wave band laser range finder. However, due to the low thermal conductivity of phosphate glass (about 0.8Wm -1 K -1 ) The pulse repetition frequency of erbium-ytterbium double-doped phosphate glass lasers is generally lower when the lasers work at high pulse energies due to severe thermal effects. The high repetition frequency can realize high scanning speed and increase the data volume of the received signals, thereby greatly improving the measurement accuracy of the range finder and expanding the application range thereof. Therefore, it is necessary to develop a high energy 1.55 μm micro-pulse laser that can operate at a hundred hertz repetition rate for laser rangefinders.
Erbium ytterbium double-doped Lu 2 Si 2 O 7 The crystals have a high thermal conductivity (about 9-14Wm -1 K -1 ) And long fluorescence lifetime (8-9 ms) at the upper energy level of laser, while Yb in the crystal 3+ →Er 3+ The energy transfer efficiency of the crystal can reach 85 percent, so the crystal is a high-performance gain medium capable of realizing high-energy 1.55 mu m pulse laser operation.
Disclosure of Invention
The application provides a human eye safe 1.55 mu m-band miniature pulse laser with hundred hertz level repetition frequency, hundred micro-focus level pulse energy and nanosecond level pulse width, which can solve the problem that the pulse repetition frequency of a detection beam of the existing band laser range finder is low.
According to one aspect of the present application, a 1.55 μm pulsed laser is provided.
A 1.55 μm pulse laser, the 1.55 μm pulse laser comprising a pump source, an input mirror dielectric film, a gain medium, a Q-switched element, an output mirror dielectric film along a common axis;
the transmittance of the input mirror dielectric film at 976nm and/or 905nm wave bands is set to be more than or equal to 90%, and the transmittance at 1.55 mu m wave bands is set to be less than or equal to 0.5%;
the initial transmittance of the Q-switching element in the wave band of 1.55 mu m is set to be 70-95%;
the transmittance of the output mirror dielectric film in a wave band of 1.55 mu m is set to be 10-40%;
the working mode of the pump source is a pulse working mode, the pulse period of the pulse working mode is 2-100ms, and the pulse width is 0.2-10ms;
the pump source can generate laser light in 976nm and/or 905nm wave bands.
The laser realizes the operation of 1.55 mu m wave band single pulse laser in one pumping pulse width by controlling the incident pumping power, and the repetition frequency of the 1.55 mu m wave band pulse laser is modulated by the pumping source, so that the repetition frequency of the 1.55 mu m wave band pulse laser is consistent with the repetition frequency of the pumping source pulse.
Optionally, the gain medium comprises erbium ytterbium co-doped lutetium disilicate crystals;
the chemical formula of the erbium-ytterbium co-doped lutetium pyrosilicate crystal is (Er) x Yb y Lu (1-x-y) ) 2 Si 2 O 7 Wherein x=0.3-2.0 at.%, y=3-20 at.%, x=0.3, 0.4, 0.5,Any value in 0.6, 0.7, 0.8, 0.9, 1.0, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9, 2.0at.% or any value in a range of any two numbers, y = 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20at.% or any value in a range of any two numbers.
Optionally, the Q-switching element comprises Co 2+ :MgAl 2 O 4 And (5) a crystal.
Optionally, the input mirror dielectric film is plated on the input end face of the gain medium;
the output mirror dielectric film is plated on the output end face of the Q-switching element;
the output end face of the gain medium and the input end face of the Q-switching element are combined in an optical cement mode.
Optionally, a focusing coupling mirror is arranged between the pump source and the input mirror dielectric film.
Optionally, a sapphire crystal is further arranged between the input mirror dielectric film and the gain medium, the input mirror dielectric film is plated on the input end face of the sapphire crystal, and the output end face of the sapphire crystal and the input end face of the gain medium are combined in a photoresist mode.
In a second aspect of the present application, a light source for a laser rangefinder is provided.
The light source of the laser range finder is the 1.55 mu m pulse laser.
The beneficial effects that this application can produce include:
the invention adopts (Er) x Yb y Lu (1-x-y) ) 2 Si 2 O 7 The crystal is used as a gain medium of a 1.55 mu m-band miniature pulse laser. Compared with the erbium-ytterbium double-doped phosphate glass widely used at present, the crystal has higher heat conductivity, can realize higher pulse repetition frequency and improves the stability of output laser. Meanwhile, the crystal also has long fluorescence lifetime of the upper energy level of laser, and can realize high-energy pulse laser output. The high-energy miniature pulse laser is used as a detection light source of the laser range finder, so that not only can a long-distance target be detected, but alsoSo as to realize high scanning speed and increase the data volume of the received signals, thereby greatly improving the measurement accuracy of the range finder and expanding the application range thereof.
Detailed Description
The present application is described in detail below with reference to examples, but the present application is not limited to these examples.
The detection method in the embodiment of the application is as follows: the pulse laser energy is measured by a laser energy meter (probe type PE9-C, the head type is Centauri, and both are manufactured by Ophir-spiral company); pulse laser repetition rate and pulse width were detected using an oscilloscope (photo detector model DET08C from Thorlabs, agilent, DSO 6102A).
Will (Er) x Yb y Lu 1-x-y ) 2 Si 2 O 7 The light-passing section of the crystal is 3X 3mm 2 And (3) carrying out laser-level polishing on the light-transmitting end face of the block-shaped crystal sample by using a Y-shaped block-shaped sample with the thickness of 3.0mm in the light-transmitting direction. The Q-switching element adopts Co 2+ :MgAl 2 O 4 A crystal with a light-transmitting section of 3X 3mm 2 The thickness of the light passing direction is 1.5mm, the light passing end face is subjected to laser-level polishing, and the initial transmittance of the Q-switched crystal at the wave band of 1.55 mu m is 90%. Input mirror dielectric film is directly plated on (Er x Yb y Lu 1-x-y ) 2 Si 2 O 7 The transmittance T of the input mirror dielectric film at 976nm wavelength is more than or equal to 90%, and the transmittance T at 1.55 μm wave band is less than or equal to 0.1%. The dielectric film of the output mirror is directly plated on Co 2+ :MgAl 2 O 4 The transmittance t=15% of the output mirror dielectric film at the 1.55 μm band at the output end face of the crystal. The above (Er) x Yb y Lu 1-x-y ) 2 Si 2 O 7 Crystal output face and Co 2+ :MgAl 2 O 4 The crystal input end face is tightly attached together by adopting an optical cement mode and then fixed on a copper seat with a light transmission hole in the middle.
Example 1
The pumping source adopts 976nm semiconductor laser with pulse working mode, the pumping pulse period is 10ms, the pumping pulse width is 2ms, the pumpThe pump laser is focused into the gain medium through the focusing coupling mirror, and the waist spot diameter of the pump laser in the gain medium is 300 mu m. End-pumped (Er) using the semiconductor laser 0.005 Yb 0.05 Lu 0.945 ) 2 Si 2 O 7 The crystal is pumped by the incident power of 20W peak value to obtain 1.55 mu m band miniature pulse laser with 100Hz repetition frequency, 120 mu J pulse energy and 2.1ns pulse width.
By using the steps described in this embodiment, a 976nm semiconductor laser can be pumped (Er 0.005 Yb 0.05 Lu 0.945 ) 2 Si 2 O 7 The crystal realizes 1.55 mu m band miniature pulse laser with 100Hz repetition rate, 120 mu J pulse energy and 2.1ns pulse width.
Example 2
The pulse period of the 976nm semiconductor laser in example 1 was adjusted to 5ms, the pulse width was adjusted to 1ms, and the waist diameter of the pump laser in the gain medium was adjusted to 300 μm. End-pumped (Er) using the semiconductor laser 0.005 Yb 0.05 Lu 0.945 ) 2 Si 2 O 7 The crystal is pumped by 25W peak incident power to obtain 1.55 mu m band miniature pulse laser with 200Hz repetition frequency, 100 mu J pulse energy and 2.3ns pulse width.
By using the steps described in this embodiment, a 976nm semiconductor laser can be pumped (Er 0.005 Yb 0.05 Lu 0.945 ) 2 Si 2 O 7 The crystal realizes 1.55 mu m band micro pulse laser with 200Hz repetition rate, 100 mu J pulse energy and 2.3ns pulse width.
Example 3
The pulse period of the 976nm semiconductor laser in example 1 was adjusted to 20ms, the pulse width was adjusted to 4.0ms, and the waist diameter of the pump laser in the gain medium was adjusted to 200 μm. End-pumped (Er) using the semiconductor laser 0.005 Yb 0.05 Lu 0.945 ) 2 Si 2 O 7 The crystal, under the pumping of 15W peak incident power, obtains 1.55 mu m band micro pulse with 50Hz repetition frequency, 160 mu J pulse energy and 1.9ns pulse widthAnd (5) laser.
By using the steps described in this embodiment, a 976nm semiconductor laser can be pumped (Er 0.005 Yb 0.05 Lu 0.945 ) 2 Si 2 O 7 The crystal realizes 1.55 mu m band miniature pulse laser with 50Hz repetition rate, 160 mu J pulse energy and 1.9ns pulse width.
Examples 4 to 6
The (Er) of examples 1-3 0.005 Yb 0.05 Lu 0.945 ) 2 Si 2 O 7 Crystal substitution to (Er) 0.006 Yb 0.06 Lu 0.934 ) 2 Si 2 O 7 The crystals were otherwise set in the same manner as in examples 1 to 3, and the experimental results were similar to those in examples 1 to 3, respectively.
Examples 7 to 9
The (Er) of examples 1-3 0.005 Yb 0.05 Lu 0.945 ) 2 Si 2 O 7 Crystal substitution to (Er) 0.006 Yb 0.07 Lu 0.924 ) 2 Si 2 O 7 The crystals were otherwise set in the same manner as in examples 1 to 3, and the experimental results were similar to those in examples 1 to 3, respectively.
Comparative examples 10 to 12
The (Er) of examples 1-3 0.005 Yb 0.05 Lu 0.945 ) 2 Si 2 O 7 Crystal substitution to (Er) 0.002 Yb 0.02 Lu 0.978 ) 2 Si 2 O 7 The crystals, other settings were the same as those of examples 1-3, and the effects of examples 1-3 could not be achieved.
Comparative examples 13 to 15
The (Er) of examples 1-3 0.005 Yb 0.05 Lu 0.945 ) 2 Si 2 O 7 Crystal substitution to (Er) 0.025 Yb 0.25 Lu 0.725 ) 2 Si 2 O 7 The crystals, other settings were the same as those of examples 1-3, and the effects of examples 1-3 could not be achieved.
The foregoing description is only a few examples of the present application and is not intended to limit the present application in any way, and although the present application is disclosed in the preferred examples, it is not intended to limit the present application, and any person skilled in the art may make some changes or modifications to the disclosed technology without departing from the scope of the technical solution of the present application, and the technical solution is equivalent to the equivalent embodiments.
Claims (6)
1. A 1.55 mu m pulse laser, which is characterized by comprising a pumping source, an input mirror dielectric film, a gain medium, a Q-switching element and an output mirror dielectric film along the same axis;
the transmittance of the input mirror dielectric film at 976nm and/or 905nm wave bands is set to be more than or equal to 90%, and the transmittance at 1.55 mu m wave bands is set to be less than or equal to 0.5%;
the initial transmittance of the Q-switching element in the wave band of 1.55 mu m is set to be 70-95%;
the transmittance of the output mirror dielectric film in a wave band of 1.55 mu m is set to be 10-40%;
the working mode of the pump source is a pulse working mode, the pulse period of the pulse working mode is 2-100ms, and the pulse width is 0.2-10ms;
the pump source can generate 976nm and/or 905nm wave band laser;
the laser device realizes the operation of 1.55 mu m wave band single pulse laser in one pumping pulse width by controlling the incident pumping power, and the repetition frequency of the 1.55 mu m wave band pulse laser is modulated by the pumping source, so that the repetition frequency of the 1.55 mu m wave band pulse laser is consistent with the repetition frequency of the pumping source pulse;
the gain medium comprises erbium-ytterbium co-doped lutetium disilicate crystals;
the chemical formula of the erbium-ytterbium co-doped lutetium pyrosilicate crystal is (Er) x Yb y Lu (1-x-y) ) 2 Si 2 O 7 Where x=0.3-2.0 at.%, y=3-20 at.%.
2. The 1.55 μm pulse laser of claim 1, wherein the Q-switched element comprises Co 2+ :MgAl 2 O 4 And (5) a crystal.
3. The 1.55 μm pulsed laser of claim 1, wherein the input mirror dielectric film is plated on an input facet of the gain medium;
the output mirror dielectric film is plated on the output end face of the Q-switching element;
the output end face of the gain medium and the input end face of the Q-switching element are combined in an optical cement mode.
4. The 1.55 μm pulsed laser of claim 1, wherein a focusing coupling mirror is provided between the pump source and the input mirror dielectric film.
5. The 1.55 μm pulse laser according to claim 1, wherein a sapphire crystal is further arranged between the input mirror dielectric film and the gain medium, the input mirror dielectric film is coated on an input end face of the sapphire crystal, and an output end face of the sapphire crystal and an input end face of the gain medium are combined in a photoresist mode.
6. A light source of a laser range finder, the light source of the laser range finder being a 1.55 μm pulse laser as claimed in any one of claims 1 to 5.
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| CN202111539692.3A CN114374141B (en) | 2021-12-15 | 2021-12-15 | 1.55 mu m pulse laser and application thereof |
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| CN114374141B true CN114374141B (en) | 2023-06-09 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006332490A (en) * | 2005-05-30 | 2006-12-07 | Sony Corp | Light emitting element and light emitting device |
| WO2018040019A1 (en) * | 2016-08-31 | 2018-03-08 | 深圳大学 | Generation device, generation method and application for 2.9-micron wave band pulse laser |
| CN111164732A (en) * | 2017-09-28 | 2020-05-15 | 天空激光二极管有限公司 | Smart visible light containing gallium and nitrogen laser sources |
| CN111370988A (en) * | 2020-04-17 | 2020-07-03 | 中国科学院福建物质结构研究所 | 1.55 mu m wave band Q-switched pulse laser |
| CN114142333A (en) * | 2021-10-13 | 2022-03-04 | 闽都创新实验室 | Pulse laser and application thereof |
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- 2021-12-15 CN CN202111539692.3A patent/CN114374141B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006332490A (en) * | 2005-05-30 | 2006-12-07 | Sony Corp | Light emitting element and light emitting device |
| WO2018040019A1 (en) * | 2016-08-31 | 2018-03-08 | 深圳大学 | Generation device, generation method and application for 2.9-micron wave band pulse laser |
| CN111164732A (en) * | 2017-09-28 | 2020-05-15 | 天空激光二极管有限公司 | Smart visible light containing gallium and nitrogen laser sources |
| CN111370988A (en) * | 2020-04-17 | 2020-07-03 | 中国科学院福建物质结构研究所 | 1.55 mu m wave band Q-switched pulse laser |
| CN114142333A (en) * | 2021-10-13 | 2022-03-04 | 闽都创新实验室 | Pulse laser and application thereof |
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