CN114374141A - 1.55 mu m pulse laser and application thereof - Google Patents
1.55 mu m pulse laser and application thereof Download PDFInfo
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- CN114374141A CN114374141A CN202111539692.3A CN202111539692A CN114374141A CN 114374141 A CN114374141 A CN 114374141A CN 202111539692 A CN202111539692 A CN 202111539692A CN 114374141 A CN114374141 A CN 114374141A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1608—Solid materials characterised by an active (lasing) ion rare earth erbium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1618—Solid materials characterised by an active (lasing) ion rare earth ytterbium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/1655—Solid materials characterised by a crystal matrix silicate
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A90/00—Technologies having an indirect contribution to adaptation to climate change
- Y02A90/10—Information and communication technologies [ICT] supporting adaptation to climate change, e.g. for weather forecasting or climate simulation
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Abstract
The application discloses a 1.55 mu m wave band pulse laser, which adopts (Er)xYbyLu(1‑x‑y))2Si2O7The crystal is used as a gain medium, wherein x is 0.3-2.0 at.%, and y is 3-20 at.%. The application also discloses a light source of the laser range finder, which is the 1.55 mu m pulse laser. The 1.55-micron waveband micro pulse laser safe for human eyes has hundred-Hertz-level repetition frequency, hundred-microjoule-level pulse energy and nanosecond pulse width, and can solve the problem that the pulse repetition frequency of a detection beam of an existing waveband laser range finder is low.
Description
Technical Field
The application relates to a pulse laser and application thereof, in particular to a high-energy micro pulse laser with a 1.55 mu m wave band safe to human eyes, belonging to the technical field of laser devices.
Background
The human eye safe 1.55 mu m wave band laser range finder is widely applied to the fields of remote sensing, measurement, military and the like. The laser range finder needs a 1.55 mu m wave band solid pulse laser which is miniaturized, low in cost and stable in performance to output a detection beam. In order to accurately measure targets over distances of several kilometers, a pulsed laser should have a high pulse energy of the order of hundred microjoules, a narrow pulse width of the order of nanoseconds, and good beam quality. At present, erbium-ytterbium double-doped phosphate glass is adopted as enhancementThe medium can realize passive Q-switched micro pulse laser with energy of more than 100 micro-joules and width of a few nanoseconds, and is widely used as a detection beam of a 1.55 mu m waveband laser range finder. However, due to the low thermal conductivity of phosphate glass (about 0.8 Wm)-1K-1) The serious thermal effect is caused, and the pulse repetition frequency of the erbium-ytterbium double-doped phosphate glass laser is generally lower when the erbium-ytterbium double-doped phosphate glass laser works at high pulse energy. The high repetition frequency can realize high scanning speed and increase the data volume of received signals, thereby greatly improving the measurement precision of the distance meter and expanding the application range of the distance meter. Therefore, there is a need for a laser rangefinder that can operate at a hundred hertz repetition rate using a high energy 1.55 μm micro-pulsed laser.
Erbium and ytterbium co-doped Lu2Si2O7The crystal has high thermal conductivity (about 9-14 Wm)-1K-1) And long laser upper level fluorescence lifetime (8-9ms), while Yb in the crystal3+→Er3+The energy transfer efficiency of the crystal can reach 85 percent, so the crystal is a high-performance gain medium which can realize the high-energy 1.55 mu m pulse laser operation.
Disclosure of Invention
The application provides a human eye-safe 1.55 mu m waveband micro pulse laser with hundred hertz level repetition frequency, hundred microfocus level pulse energy and nanosecond level pulse width, which can solve the problem of low pulse repetition frequency of the detection beam of the existing waveband laser range finder.
According to one aspect of the present application, a 1.55 μm pulsed laser is provided.
A1.55 μm pulse laser, the 1.55 μm pulse laser includes a pumping source, an input mirror dielectric film, a gain medium, a Q-switched element, and an output mirror dielectric film coaxially;
the transmittance of the input mirror dielectric film in a 976nm and/or 905nm wave band is set to be more than or equal to 90 percent, and the transmittance in a 1.55 mu m wave band is set to be less than or equal to 0.5 percent;
the initial transmittance of the Q-switching element in a 1.55 mu m wave band is set to be 70-95%;
the transmittance of the output mirror dielectric film in a 1.55 μm wave band is set to be 10-40%;
the working mode of the pumping source is a pulse working mode, the pulse period of the pulse working mode is 2-100ms, and the pulse width is 0.2-10 ms;
the pump source can generate laser light with 976nm and/or 905nm wave bands.
The laser realizes the operation of 1.55 mu m wave band single pulse laser in a pumping pulse width by controlling the incident pumping power, and the repetition frequency of the 1.55 mu m wave band pulse laser is modulated by a pumping source, so that the repetition frequency of the 1.55 mu m wave band pulse laser is consistent with the pulse repetition frequency of the pumping source.
Optionally, the gain medium comprises erbium ytterbium co-doped lutetium pyrosilicate crystals;
the chemical formula of the erbium-ytterbium co-doped lutetium pyrosilicate crystal is (Er)xYbyLu(1-x-y))2Si2O7Wherein x is 0.3 to 2.0 at.%, y is 3 to 20 at.%, x is 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, 1.0, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9, 2.0 at.% or any value in a range of any two values, and y is 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20 at.% or any value in a range of any two values.
Optionally, the Q-switched element comprises Co2+:MgAl2O4And (4) crystals.
Optionally, the input mirror dielectric film is plated on the input end face of the gain medium;
the output mirror dielectric film is plated on the output end face of the Q-switching element;
and the output end surface of the gain medium and the input end surface of the Q-switching element are combined in an optical cement mode.
Optionally, a focusing coupling mirror is disposed between the pump source and the input mirror dielectric film.
Optionally, a sapphire crystal is further arranged between the input mirror dielectric film and the gain medium, the input mirror dielectric film is plated on an input end face of the sapphire crystal, and an output end face of the sapphire crystal and an input end face of the gain medium are combined in an optical cement mode.
In a second aspect of the present application, a light source for a laser range finder is provided.
The light source of the laser range finder is the 1.55 mu m pulse laser.
The beneficial effects that this application can produce include:
by (Er) in the present inventionxYbyLu(1-x-y))2Si2O7The crystal is used as a gain medium of a 1.55 mu m wave band micro pulse laser. Compared with the erbium-ytterbium double-doped phosphate glass which is widely applied at present, the crystal has higher thermal conductivity, can realize higher pulse repetition frequency and improve the stability of output laser. Meanwhile, the crystal also has long service life of laser upper level fluorescence, and can realize high-energy pulse laser output. The high-energy micro pulse laser is used as a detection light source of the laser range finder, so that a long-distance target object can be detected, high scanning speed can be realized, and the data volume of received signals is increased, thereby greatly improving the measurement precision of the range finder and expanding the application range of the range finder.
Detailed Description
The present application will be described in detail with reference to examples, but the present application is not limited to these examples.
The detection method in the embodiment of the application is as follows: the pulse laser energy is measured by a laser energy meter (a probe model is PE9-C, a gauge head model is Centauri, and the probe model is all products of Ophir-Spiricon company); the pulse laser repetition frequency and pulse width were measured using an oscilloscope (photodetector model number DET08C from Thorlabs, inc., oscilloscope model number DSO6102A from Agilent, inc.).
Will (Er)xYbyLu1-x-y)2Si2O7The cut section of the crystal is 3 multiplied by 3mm2And cutting a block sample with the thickness of 3.0mm in the light transmission direction, and performing laser-level polishing on the light transmission end face of the block crystal sample. The Q-switching element adopts Co2+:MgAl2O4Crystal with a light-transmitting cross section of 3X 3mm2The thickness of the light-transmitting direction is 1.5mm, and the light-transmitting end face is subjected to laser-level polishingThe initial transmittance of the Q-switched crystal at a wavelength band of 1.55 μm was 90%. Input mirror dielectric film directly plated on (Er)xYbyLu1-x-y)2Si2O7At the input end face of the crystal, the transmittance T of the input mirror dielectric film at the wavelength of 976nm is more than or equal to 90 percent, and the transmittance T at the waveband of 1.55 mu m is less than or equal to 0.1 percent. The output mirror dielectric film is directly plated on Co2+:MgAl2O4And the transmittance T of the output mirror dielectric film at the output end face of the crystal is 15% at the wave band of 1.55 mu m. Adding (Er) as abovexYbyLu1-x-y)2Si2O7Crystal output end face and Co2+:MgAl2O4The input end faces of the crystals are tightly attached together in a light glue mode and then fixed on a copper seat with a light through hole in the middle.
Example 1
The pump source adopts a 976nm semiconductor laser in a pulse working mode, the pump pulse period is 10ms, the pump pulse width is 2ms, the pump laser is focused into a gain medium through a focusing coupling mirror, and the diameter of a waist spot of the pump laser in the gain medium is 300 mu m. End-pumped (Er) using the semiconductor laser0.005Yb0.05Lu0.945)2Si2O7The crystal is pumped by 20W peak incident power to obtain 1.55 mu m wave band micro pulse laser with 100Hz repetition frequency, 120 mu J pulse energy and 2.1ns pulse width.
Using the procedure described in this example, a 976nm semiconductor laser pump (Er) can be used0.005Yb0.05Lu0.945)2Si2O7The crystal realizes 1.55 mu m wave band micro pulse laser with 100Hz repetition frequency, 120 mu J pulse energy and 2.1ns pulse width.
Example 2
The pump pulse period of the 976nm semiconductor laser in example 1 was adjusted to 5ms, the pump pulse width was adjusted to 1ms, and the diameter of the waist spot of the pump laser in the gain medium was adjusted to 300 μm. End-pumped (Er) using the semiconductor laser0.005Yb0.05Lu0.945)2Si2O7The crystal is pumped under 25W peak incident power to obtain a crystal with a weight of 200Hz1.55 μm wave band micro pulse laser with complex frequency, 100 μ J pulse energy and 2.3ns pulse width.
Using the procedure described in this example, a 976nm semiconductor laser pump (Er) can be used0.005Yb0.05Lu0.945)2Si2O7The crystal realizes 1.55 mu m wave band micro pulse laser with 200Hz repetition frequency, 100 mu J pulse energy and 2.3ns pulse width.
Example 3
The pump pulse period of the 976nm semiconductor laser in example 1 was adjusted to 20ms, the pump pulse width was adjusted to 4.0ms, and the diameter of the waist spot of the pump laser in the gain medium was adjusted to 200 μm. End-pumped (Er) using the semiconductor laser0.005Yb0.05Lu0.945)2Si2O7The crystal is pumped by 15W peak incident power to obtain 1.55 mu m wave band micro pulse laser with 50Hz repetition frequency, 160 mu J pulse energy and 1.9ns pulse width.
Using the procedure described in this example, a 976nm semiconductor laser pump (Er) can be used0.005Yb0.05Lu0.945)2Si2O7The crystal realizes 1.55 mu m wave band micro pulse laser with 50Hz repetition frequency, 160 mu J pulse energy and 1.9ns pulse width.
Examples 4 to 6
The (Er) in examples 1-30.005Yb0.05Lu0.945)2Si2O7Crystal substitution is (Er)0.006Yb0.06Lu0.934)2Si2O7The crystal, other setup was the same as in examples 1-3, and the experimental results were similar to examples 1-3, respectively.
Examples 7 to 9
The (Er) in examples 1-30.005Yb0.05Lu0.945)2Si2O7Crystal substitution is (Er)0.006Yb0.07Lu0.924)2Si2O7The crystal, other setup was the same as in examples 1-3, and the experimental results were similar to examples 1-3, respectively.
Comparative examples 10 to 12
The (Er) in examples 1-30.005Yb0.05Lu0.945)2Si2O7Crystal substitution is (Er)0.002Yb0.02Lu0.978)2Si2O7The crystal and other settings were the same as in examples 1 to 3, and the effects of examples 1 to 3 could not be achieved.
Comparative examples 13 to 15
The (Er) in examples 1-30.005Yb0.05Lu0.945)2Si2O7Crystal substitution is (Er)0.025Yb0.25Lu0.725)2Si2O7The crystal and other settings were the same as in examples 1 to 3, and the effects of examples 1 to 3 could not be achieved.
Although the present application has been described with reference to a few embodiments, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the application as defined by the appended claims.
Claims (7)
1. A1.55 μm pulse laser is characterized in that the 1.55 μm pulse laser coaxially comprises a pumping source, an input mirror dielectric film, a gain medium, a Q-switching element and an output mirror dielectric film;
the transmittance of the input mirror dielectric film in a 976nm and/or 905nm wave band is set to be more than or equal to 90 percent, and the transmittance in a 1.55 mu m wave band is set to be less than or equal to 0.5 percent;
the initial transmittance of the Q-switching element in a 1.55 mu m wave band is set to be 70-95%;
the transmittance of the output mirror dielectric film in a 1.55 μm wave band is set to be 10-40%;
the working mode of the pumping source is a pulse working mode, the pulse period of the pulse working mode is 2-100ms, and the pulse width is 0.2-10 ms;
the pumping source can generate laser with 976nm and/or 905nm wave bands;
the laser realizes the operation of 1.55 mu m wave band single pulse laser in a pumping pulse width by controlling the incident pumping power, and the repetition frequency of the 1.55 mu m wave band pulse laser is modulated by a pumping source, so that the repetition frequency of the 1.55 mu m wave band pulse laser is consistent with the pulse repetition frequency of the pumping source.
2. The 1.55 μm pulsed laser of claim 1, wherein the gain medium comprises erbium ytterbium co-doped lutetium orthosilicate crystals;
the chemical formula of the erbium-ytterbium co-doped lutetium pyrosilicate crystal is (Er)xYbyLu(1-x-y))2Si2O7Wherein x is 0.3-2.0 at.%, and y is 3-20 at.%.
3. The 1.55 μm pulsed laser of claim 1, wherein the Q-switching element comprises Co2+:MgAl2O4And (4) crystals.
4. The 1.55 μm pulsed laser of claim 1, wherein said input mirror dielectric film is plated on the input facet of the gain medium;
the output mirror dielectric film is plated on the output end face of the Q-switching element;
and the output end surface of the gain medium and the input end surface of the Q-switching element are combined in an optical cement mode.
5. The 1.55 μm pulse laser as claimed in claim 1, wherein a focusing coupling mirror is disposed between the pump source and the input mirror dielectric film.
6. The 1.55 μm pulse laser according to claim 1, wherein a sapphire crystal is further disposed between the input mirror dielectric film and the gain medium, the input mirror dielectric film is plated on an input end face of the sapphire crystal, and an output end face of the sapphire crystal and an input end face of the gain medium are bonded by means of optical cement.
7. A light source of a laser range finder, the light source of the laser range finder being the 1.55 μm pulsed laser of any one of claims 1-6.
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| CN202111539692.3A CN114374141B (en) | 2021-12-15 | 2021-12-15 | 1.55 mu m pulse laser and application thereof |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006332490A (en) * | 2005-05-30 | 2006-12-07 | Sony Corp | Light emitting element and light emitting device |
| WO2018040019A1 (en) * | 2016-08-31 | 2018-03-08 | 深圳大学 | Generation device, generation method and application for 2.9-micron wave band pulse laser |
| CN111164732A (en) * | 2017-09-28 | 2020-05-15 | 天空激光二极管有限公司 | Smart visible light containing gallium and nitrogen laser sources |
| CN111370988A (en) * | 2020-04-17 | 2020-07-03 | 中国科学院福建物质结构研究所 | 1.55 mu m wave band Q-switched pulse laser |
| CN114142333A (en) * | 2021-10-13 | 2022-03-04 | 闽都创新实验室 | Pulse laser and application thereof |
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- 2021-12-15 CN CN202111539692.3A patent/CN114374141B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006332490A (en) * | 2005-05-30 | 2006-12-07 | Sony Corp | Light emitting element and light emitting device |
| WO2018040019A1 (en) * | 2016-08-31 | 2018-03-08 | 深圳大学 | Generation device, generation method and application for 2.9-micron wave band pulse laser |
| CN111164732A (en) * | 2017-09-28 | 2020-05-15 | 天空激光二极管有限公司 | Smart visible light containing gallium and nitrogen laser sources |
| CN111370988A (en) * | 2020-04-17 | 2020-07-03 | 中国科学院福建物质结构研究所 | 1.55 mu m wave band Q-switched pulse laser |
| CN114142333A (en) * | 2021-10-13 | 2022-03-04 | 闽都创新实验室 | Pulse laser and application thereof |
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