CN114134477B - 载置器、成膜装置、成膜方法以及电子器件的制造方法 - Google Patents
载置器、成膜装置、成膜方法以及电子器件的制造方法 Download PDFInfo
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- CN114134477B CN114134477B CN202111035984.3A CN202111035984A CN114134477B CN 114134477 B CN114134477 B CN 114134477B CN 202111035984 A CN202111035984 A CN 202111035984A CN 114134477 B CN114134477 B CN 114134477B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6734—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders specially adapted for supporting large square shaped substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67346—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Robotics (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (39)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020149004 | 2020-09-04 | ||
JP2020-149004 | 2020-09-04 | ||
JP2020206011 | 2020-12-11 | ||
JP2020-206011 | 2020-12-11 | ||
JP2021126903A JP2022043994A (ja) | 2020-09-04 | 2021-08-02 | キャリア、成膜装置、成膜方法及び電子デバイスの製造方法 |
JP2021-126903 | 2021-08-02 |
Publications (2)
Publication Number | Publication Date |
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CN114134477A CN114134477A (zh) | 2022-03-04 |
CN114134477B true CN114134477B (zh) | 2023-10-17 |
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CN202111035984.3A Active CN114134477B (zh) | 2020-09-04 | 2021-09-03 | 载置器、成膜装置、成膜方法以及电子器件的制造方法 |
Country Status (2)
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KR (1) | KR102591418B1 (zh) |
CN (1) | CN114134477B (zh) |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2008007857A (ja) * | 2006-06-02 | 2008-01-17 | Sony Corp | アライメント装置、アライメント方法および表示装置の製造方法 |
CN103930279A (zh) * | 2011-11-14 | 2014-07-16 | 富士机械制造株式会社 | 掩模印刷方法及装置 |
JP2015137391A (ja) * | 2014-01-22 | 2015-07-30 | 株式会社アルバック | 基板保持装置および成膜装置 |
CN206344162U (zh) * | 2017-01-04 | 2017-07-21 | 京东方科技集团股份有限公司 | 一种机械手及蒸镀装置 |
CN107710397A (zh) * | 2015-06-12 | 2018-02-16 | 株式会社爱发科 | 基板保持装置、成膜装置和基板保持方法 |
CN111217023A (zh) * | 2016-09-29 | 2020-06-02 | 大日本印刷株式会社 | 蒸镀掩模包装体、蒸镀掩模包装方法及蒸镀掩模的制造方法 |
CN111321374A (zh) * | 2018-12-14 | 2020-06-23 | 佳能特机株式会社 | 输送载体、蒸镀装置以及电子器件的制造装置 |
CN111424234A (zh) * | 2020-05-09 | 2020-07-17 | 江苏集萃有机光电技术研究所有限公司 | 一种对位模块、对位设备、薄膜沉积生产线及控制方法 |
CN111434797A (zh) * | 2019-01-11 | 2020-07-21 | 佳能特机株式会社 | 成膜装置以及电子器件的制造装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4318504B2 (ja) | 2003-08-05 | 2009-08-26 | キヤノンアネルバ株式会社 | 成膜装置の基板トレイ |
JP2012097330A (ja) | 2010-11-02 | 2012-05-24 | Canon Inc | 薄膜形成装置及び有機elデバイス製造装置 |
JP2013055093A (ja) | 2011-09-01 | 2013-03-21 | Creative Technology:Kk | 粘着チャック装置及びワークの粘着保持方法 |
KR102270080B1 (ko) * | 2013-10-30 | 2021-06-29 | 삼성디스플레이 주식회사 | 박막 증착 장치 |
US11047039B2 (en) * | 2018-01-08 | 2021-06-29 | Applied Materials, Inc. | Substrate carrier having hard mask |
JP7159238B2 (ja) | 2020-03-13 | 2022-10-24 | キヤノントッキ株式会社 | 基板キャリア、成膜装置、及び成膜方法 |
-
2021
- 2021-09-02 KR KR1020210117162A patent/KR102591418B1/ko active IP Right Grant
- 2021-09-03 CN CN202111035984.3A patent/CN114134477B/zh active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008007857A (ja) * | 2006-06-02 | 2008-01-17 | Sony Corp | アライメント装置、アライメント方法および表示装置の製造方法 |
CN103930279A (zh) * | 2011-11-14 | 2014-07-16 | 富士机械制造株式会社 | 掩模印刷方法及装置 |
JP2015137391A (ja) * | 2014-01-22 | 2015-07-30 | 株式会社アルバック | 基板保持装置および成膜装置 |
CN107710397A (zh) * | 2015-06-12 | 2018-02-16 | 株式会社爱发科 | 基板保持装置、成膜装置和基板保持方法 |
CN111217023A (zh) * | 2016-09-29 | 2020-06-02 | 大日本印刷株式会社 | 蒸镀掩模包装体、蒸镀掩模包装方法及蒸镀掩模的制造方法 |
CN206344162U (zh) * | 2017-01-04 | 2017-07-21 | 京东方科技集团股份有限公司 | 一种机械手及蒸镀装置 |
CN111321374A (zh) * | 2018-12-14 | 2020-06-23 | 佳能特机株式会社 | 输送载体、蒸镀装置以及电子器件的制造装置 |
CN111434797A (zh) * | 2019-01-11 | 2020-07-21 | 佳能特机株式会社 | 成膜装置以及电子器件的制造装置 |
CN111424234A (zh) * | 2020-05-09 | 2020-07-17 | 江苏集萃有机光电技术研究所有限公司 | 一种对位模块、对位设备、薄膜沉积生产线及控制方法 |
Also Published As
Publication number | Publication date |
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CN114134477A (zh) | 2022-03-04 |
KR102591418B1 (ko) | 2023-10-19 |
KR20220031519A (ko) | 2022-03-11 |
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Inventor after: Zhu Jian Inventor after: Ichikawa Yohei Inventor after: Wakabayashi Yosuke Inventor after: Suzuki Kentaro Inventor after: Sato Seiji Inventor after: 11 Inventor after: Misawa Keita Inventor after: Kazuma Kiryu Inventor after: Kai Toru Inventor after: Sunakawa shigeyuki Inventor after: Kono Hideto Inventor before: Zhu Jian Inventor before: Ichikawa Yohei Inventor before: Suzuki Kentaro Inventor before: Sato Seiji Inventor before: 11 Inventor before: Misawa Keita Inventor before: Kazuma Kiryu Inventor before: Kai Toru Inventor before: Sunakawa shigeyuki Inventor before: Kono Hideto |
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