CN114127873A - 可变电容、反射型移相器和半导体设备 - Google Patents

可变电容、反射型移相器和半导体设备 Download PDF

Info

Publication number
CN114127873A
CN114127873A CN201980098604.5A CN201980098604A CN114127873A CN 114127873 A CN114127873 A CN 114127873A CN 201980098604 A CN201980098604 A CN 201980098604A CN 114127873 A CN114127873 A CN 114127873A
Authority
CN
China
Prior art keywords
fingers
comb
inductor
finger
quadrature coupler
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201980098604.5A
Other languages
English (en)
Other versions
CN114127873B (zh
Inventor
王硕
彭嵘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huawei Technologies Co Ltd
Original Assignee
Huawei Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huawei Technologies Co Ltd filed Critical Huawei Technologies Co Ltd
Publication of CN114127873A publication Critical patent/CN114127873A/zh
Application granted granted Critical
Publication of CN114127873B publication Critical patent/CN114127873B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/38—Multiple capacitors, e.g. ganged
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/012—Form of non-self-supporting electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/40—Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/01—Details
    • H01G5/011—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/18—Phase-shifters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03C—MODULATION
    • H03C7/00—Modulating electromagnetic waves
    • H03C7/02—Modulating electromagnetic waves in transmission lines, waveguides, cavity resonators or radiation fields of antennas
    • H03C7/025—Modulating electromagnetic waves in transmission lines, waveguides, cavity resonators or radiation fields of antennas using semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/04—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of effective area of electrode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03C—MODULATION
    • H03C2200/00—Indexing scheme relating to details of modulators or modulation methods covered by H03C
    • H03C2200/0004—Circuit elements of modulators
    • H03C2200/0008—Variable capacitors, e.g. a varicap, a varactor or a variable capacitance of a diode or transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/18—Networks for phase shifting
    • H03H7/20—Two-port phase shifters providing an adjustable phase shift

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

本申请公开了一种可变电容、反射型移相器和半导体设备，涉及电子技术领域，用于解决可变电容的电容值随PVT变化敏感的问题。可变电容包括：第一梳状结构和第一组叉指，第一梳状结构包括多个梳齿，第一组叉指包括至少一个叉指，其中第一组叉指的叉指设置在第一梳状结构的至少两个梳齿之间并且无电接触；第二梳状结构和第二组叉指，第二梳状结构包括多个梳齿，第二组叉指包括至少一个叉指，其中第二组叉指的叉指设置在第一梳状结构的至少两个梳齿之间并且无电接触；以及用于控制第一组叉指的至少一个叉指和第二组叉指的至少一个叉指之间是否有电接触的开关；其中，第一梳状结构、第一组叉指、第二梳状结构以及第二组叉指均为导电材料。

Description

PCT国内申请，说明书已公开。

Claims (13)

  1. PCT国内申请，权利要求书已公开。
CN201980098604.5A 2019-08-30 2019-08-30 可变电容、反射型移相器和半导体设备 Active CN114127873B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2019/103882 WO2021035752A1 (zh) 2019-08-30 2019-08-30 可变电容、反射型移相器和半导体设备

Publications (2)

Publication Number Publication Date
CN114127873A true CN114127873A (zh) 2022-03-01
CN114127873B CN114127873B (zh) 2022-09-23

Family

ID=74684474

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980098604.5A Active CN114127873B (zh) 2019-08-30 2019-08-30 可变电容、反射型移相器和半导体设备

Country Status (4)

Country Link
US (1) US20220182015A1 (zh)
EP (1) EP4016567A4 (zh)
CN (1) CN114127873B (zh)
WO (1) WO2021035752A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11736150B2 (en) * 2021-09-25 2023-08-22 Qualcomm Incorporated Compact low-loss reflection type phase shifter

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050190018A1 (en) * 2004-02-03 2005-09-01 Ntt Docomo, Inc. Variable resonator and variable phase shifter
JP2007235457A (ja) * 2006-02-28 2007-09-13 Ntt Docomo Inc 可変フィルタ
CN101127513A (zh) * 2007-08-24 2008-02-20 东南大学 基于微机械电容式串联开关的可变叉指电容网络及制备方法
CN101582527A (zh) * 2008-05-12 2009-11-18 联发科技股份有限公司 反射式移相器、相位阵列接收器和相位阵列发射器
US20100231326A1 (en) * 2008-12-23 2010-09-16 Thales MEMS Compact Switched Capacitor
US20110102105A1 (en) * 2009-11-02 2011-05-05 Harris Corporation Mems-based tunable filter
CN203300770U (zh) * 2013-06-20 2013-11-20 成都国腾电子技术股份有限公司 一种基于微机械电子技术的微波移相器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5880921A (en) * 1997-04-28 1999-03-09 Rockwell Science Center, Llc Monolithically integrated switched capacitor bank using micro electro mechanical system (MEMS) technology
JPH11274805A (ja) * 1998-03-20 1999-10-08 Ricoh Co Ltd 高周波スイッチ並びに製造方法、及び集積化高周波スイッチアレイ
JP2007532060A (ja) * 2004-03-31 2007-11-08 エックスコム ワイアレス インコーポレイテッド 電子制御されたデジタル／アナログ混載移相器
US20100177457A1 (en) * 2009-01-10 2010-07-15 Simon Edward Willard Interdigital capacitor with Self-Canceling Inductance
US10187030B2 (en) * 2016-04-25 2019-01-22 Kumu Networks, Inc. High quality factor time delay filters using multi-layer fringe capacitors
US10269490B2 (en) * 2017-05-01 2019-04-23 Qualcomm Incorporated Metal-oxide-metal capacitor using vias within sets of interdigitated fingers

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050190018A1 (en) * 2004-02-03 2005-09-01 Ntt Docomo, Inc. Variable resonator and variable phase shifter
JP2007235457A (ja) * 2006-02-28 2007-09-13 Ntt Docomo Inc 可変フィルタ
CN101127513A (zh) * 2007-08-24 2008-02-20 东南大学 基于微机械电容式串联开关的可变叉指电容网络及制备方法
CN101582527A (zh) * 2008-05-12 2009-11-18 联发科技股份有限公司 反射式移相器、相位阵列接收器和相位阵列发射器
US20100231326A1 (en) * 2008-12-23 2010-09-16 Thales MEMS Compact Switched Capacitor
US20110102105A1 (en) * 2009-11-02 2011-05-05 Harris Corporation Mems-based tunable filter
CN203300770U (zh) * 2013-06-20 2013-11-20 成都国腾电子技术股份有限公司 一种基于微机械电子技术的微波移相器

Also Published As

Publication number Publication date
EP4016567A4 (en) 2022-09-07
US20220182015A1 (en) 2022-06-09
CN114127873B (zh) 2022-09-23
WO2021035752A1 (zh) 2021-03-04
EP4016567A1 (en) 2022-06-22

Similar Documents

Publication Publication Date Title
Shin et al. Low insertion loss, compact 4-bit phase shifter in 65 nm CMOS for 5G applications
US9577847B2 (en) Non-reciprocal components with balanced distributedly modulated capacitors (DMC)
EP3311412A1 (en) High performance radio frequency switch
Byeon et al. A low-loss compact 60-GHz phase shifter in 65-nm CMOS
CN103986450A (zh) 一种开关、天线的调谐器和射频装置
CN105340176A (zh) 提高射频电路的线性的信号处理装置
EP3275041B1 (en) Phase shifter
US7015773B2 (en) Electronic phase shifter with enhanced phase shift performance
US20220294404A1 (en) Bidirectional variable gain amplifiers for radio frequency communication systems
Lee et al. Continuous true-time delay phase shifter using distributed inductive and capacitive Miller effect
CN212380555U (zh) 一种天线装置和移动终端
CN114127873B (zh) 可变电容、反射型移相器和半导体设备
Li et al. Nonreciprocal time-varying transmission line with carrier boosting technique for low-noise RF front ends
Voisin et al. A 25-50 GHz Digitally Controlled Phase-Shifter
US10992334B2 (en) Radio frequency switches with controllable resonant frequency
Abdaoui et al. Microstrip band pass filter bank for 60 GHz UWB impulse radio multi band architectures
CN214203990U (zh) 天线装置及电子设备
Park et al. Wide‐band duplexer based on electrical balance of hybrid transformer having two notches
CN211295344U (zh) 一种x波段固态气象雷达发射机小型化电桥
Ou et al. A Wideband Bi-Directional 6-bit Passive Vector-Sum Phase Shifter Optimized Using Greedy Algorithm in 65-nm CMOS
US20230216484A1 (en) Dispersive delay line with lamb wave propagation
CN111800162B (zh) 具有可控谐振频率的射频开关
CN213243961U (zh) 射频开关电路、无线装置及移动终端
CN115603021B (zh) 定向耦合器和微波器件
KR101921072B1 (ko) 스위치드 인덕터 구조를 포함하는 스위치 회로

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant