CN114122106B - Schottky junction with continuously adjustable open-circuit voltage and preparation and application thereof - Google Patents
Schottky junction with continuously adjustable open-circuit voltage and preparation and application thereof Download PDFInfo
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- CN114122106B CN114122106B CN202111222870.XA CN202111222870A CN114122106B CN 114122106 B CN114122106 B CN 114122106B CN 202111222870 A CN202111222870 A CN 202111222870A CN 114122106 B CN114122106 B CN 114122106B
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- strontium titanate
- lsmo
- schottky junction
- circuit voltage
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- 238000002360 preparation method Methods 0.000 title abstract description 9
- 229910002075 lanthanum strontium manganite Inorganic materials 0.000 claims abstract description 30
- 229910052454 barium strontium titanate Inorganic materials 0.000 claims abstract description 29
- 239000011572 manganese Substances 0.000 claims abstract description 26
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical group [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 13
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- WOIHABYNKOEWFG-UHFFFAOYSA-N [Sr].[Ba] Chemical compound [Sr].[Ba] WOIHABYNKOEWFG-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910002113 barium titanate Inorganic materials 0.000 claims abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 11
- 238000011065 in-situ storage Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000012776 electronic material Substances 0.000 abstract description 2
- 230000004888 barrier function Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000003746 solid phase reaction Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention belongs to the technical field of semiconductor electronic materials, and in particular relates to a Schottky junction with continuously adjustable open-circuit voltage, and preparation and application thereof, wherein the Schottky junction with continuously adjustable open-circuit voltage comprises a strontium titanate substrate and La arranged on the strontium titanate substrate 0.7 Sr 0.3 MnO 3 (LSMO layer) a surface portion of the LSMO layer being covered with a barium strontium titanate layer, the surface portion of the barium strontium titanate layer being covered with a metal electrode; the material of the strontium barium titanate layer is manganese doped strontium barium titanate, and the general formula is Ba 0.6 Sr 0.4 Ti 1‑x Mn x O 3 Wherein x is more than 0 and less than or equal to 0.015. The Schottky junction has the advantages of simple structure, excellent performance and easy preparation, and provides a material and a device foundation for the application of the Schottky diode under high open-circuit voltage.
Description
Technical Field
The invention belongs to the technical field of semiconductor electronic materials, and particularly relates to a Schottky junction with continuously adjustable open-circuit voltage, and preparation and application thereof.
Background
Schottky junctions are a simple metal to semiconductor interface that has a nonlinear impedance characteristic similar to PN junctions. Different metals have different schottky barrier heights when in contact with different kinds of semiconductors; the height of the potential barrier changes along with the applied voltage, when the metal is connected with the positive voltage, the electric field in the space charge region is reduced, the potential barrier is lowered, and carriers easily pass through; otherwise, the potential barrier is raised, and carriers are not easy to pass through. The schottky junction has unidirectional conduction rectification characteristics; compared with PN junction, the current transport of the Schottky junction has the remarkable characteristics that majority carriers play a main role, so that the charge storage effect is small and the reverse recovery time is short; the current-voltage and capacitance-voltage characteristics of the schottky junction are similar to those of the PN junction, but the forward turn-on voltage of the current-voltage curve of the schottky junction is lower, the slope of the forward curve is larger, and the reverse breakdown voltage is lower.
In the prior art, the schottky barrier regulation mode is single, and meanwhile, due to the structure and material characteristics of a schottky junction, the problems of difficult current regulation and the like often exist, so that the schottky barrier regulation method is directly limited in application in semiconductor devices such as a direct-current voltage clamping device, a limiter and the like.
Disclosure of Invention
The invention aims to solve the problems and provides a schottky junction with continuously adjustable open-circuit voltage and preparation and application thereof,
according to the technical scheme of the invention, the Schottky junction with continuously adjustable open-circuit voltage comprises a strontium titanate Substrate (STO) and an LSMO layer arranged on the strontium titanate substrate, wherein the surface part of the LSMO layer is covered with a barium strontium titanate layer, and the surface part of the barium strontium titanate layer is covered with a metal electrode; the material of the strontium barium titanate layer is manganese doped strontium barium titanate, and the general formula is Ba 0.6 Sr 0.4 Ti 1-x Mn x O 3 (BSTM x ) Wherein x is more than 0 and less than or equal to 0.015 (the doping concentration of Mn is 0-1.5 mol%).
Further, the metal electrode is an Au electrode or a Pt electrode.
The second aspect of the present invention provides a method for preparing the schottky junction with continuously adjustable open circuit voltage, comprising the following steps,
s1: preparing an LSMO target and a manganese-doped barium strontium titanate target;
s2: growing an LSMO layer on a strontium titanate substrate;
s3: growing a manganese doped barium strontium titanate film on the LSMO layer in situ, and cooling to room temperature;
s4: and depositing a metal electrode on the manganese doped barium strontium titanate film to obtain the Schottky junction with continuously adjustable open-circuit voltage.
Further, in the step S1, a solid-phase reaction method is adopted to prepare an LSMO target and a manganese doped barium strontium titanate target.
Further, the thickness of the strontium titanate substrate is 0.5mm.
Further, in the step S2, the temperature for growing the LSMO layer is 650-750 ℃, and the oxygen pressure is 0.25-0.35mbar; preferably, the temperature is 700℃and the oxygen pressure is 0.3mbar.
Further, the thickness of the LSMO layer is 80-120nm.
Further, in order to reduce oxygen vacancies and improve the crystal quality of the LSMO layer, in step S2, after growing the LSMO layer, the obtained material is annealed in situ for 40-50min under an oxygen pressure of 0.4-0.6 bar.
Further, in the step S3, the growing temperature of the manganese doped barium strontium titanate film is 600-800 ℃, and the oxygen pressure is 0.08-0.12mbar; preferably, the temperature is 700℃and the oxygen pressure is 0.1mbar.
Further, in the step S3, the temperature is reduced to room temperature (25+/-5 ℃) under the oxygen pressure of 0.7-0.9 mbar; specifically, the temperature was lowered to room temperature at a rate of 10℃per minute.
Further, the thickness of the manganese doped barium strontium titanate film is 260-350nm.
A third aspect of the present invention provides the use of the above-described schottky junction with continuously adjustable open circuit voltage in a semiconductor device.
Compared with the prior art, the technical scheme of the invention has the following advantages: the Schottky junction has the advantages of simple structure, excellent performance and easy preparation, and provides a material and a device foundation for the application of the Schottky diode under high open-circuit voltage.
Drawings
Fig. 1 is a schematic structural view of the present invention.
Fig. 2 is an XRD spectrum of a barium strontium titanate layer at different manganese doping concentrations.
Fig. 3 is a graph showing the modulation profile of the schottky junction of the present invention at different manganese doping concentrations.
Reference numerals illustrate: a 1-strontium titanate substrate, a 2-LSMO layer, a 3-barium strontium titanate layer and a 4-metal electrode.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and specific examples, which are not intended to be limiting, so that those skilled in the art will better understand the invention and practice it.
Example 1
As shown in fig. 1: the utility model provides a continuous adjustable schottky junction of open circuit voltage, includes strontium titanate substrate 1 and establishes LSMO layer 2 on strontium titanate substrate 1, covers at the surface part of LSMO layer 2 has barium strontium titanate layer 3, covers at the surface part of barium strontium titanate layer has metal electrode 4 for metal electrode 4, barium strontium titanate layer 3 and LSMO layer 2's one end flushes, and the other end is the step.
Example 2
Preparation of schottky junction with continuously adjustable open-circuit voltage
S1: preparing an LSMO target and a manganese doped barium strontium titanate target by adopting a solid phase reaction, wherein the Mn doping concentration in the manganese doped barium strontium titanate is respectively 0, 0.5mol%, 0.55mol%, 1.0mol%, 1.1mol%, 1.5mol%, 1.65mol% and 2.2mol%;
s2: growing an epitaxial LSMO layer with the thickness of 100nm on a strontium titanate substrate with the thickness of 0.5mm by adopting a pulse laser deposition technology, wherein the growth temperature is 700 ℃ and the oxygen pressure is 0.3mbar; annealing the obtained material in situ for 45min under the oxygen pressure of 0.5 bar;
s3: covering part of the LSMO layer by using a mask plate, and then growing a manganese doped barium strontium titanate film with the thickness of 300nm on the LSMO layer in situ, wherein the growth temperature is 700 ℃, and the oxygen pressure is 0.1mbar; cooling to room temperature at 10 ℃/min under oxygen pressure of 0.8 mbar;
s4: and covering part of the manganese-doped barium strontium titanate film by using a mask plate, and depositing a metal electrode on the manganese-doped barium strontium titanate film by using a magnetron sputtering method.
As shown in fig. 2: in the case of Mn doping, the BSTMx peak marked by the right dotted line is shifted from 45.28 degrees to 46 degrees, and when the Mn doping concentration reaches 2.2mol%, the hetero-phase peak marked by the left dotted line appears, which means that as the Mn concentration increases, the second phase appears in the BSTMx film, and defects increase.
As shown in fig. 3: when the Mn doping concentration is not more than 1.5mol%, the Schottky junction I-V curve has obvious asymmetric characteristics, and the forward bias current is far greater than the reverse bias current. Under the electric field of-6V to +6V, when the doping concentration of manganese is changed from 0 to 1.5%, the starting voltage is changed from 1.2V to 2.1V, the adjusting amplitude is far more than the barrier height of the Schottky junction, the current regulation and control of doping reaches more than 4 orders of magnitude, and the positive and negative voltage switching current ratio is more than 10-10000 times, so that the method can be applied to the design and preparation of semiconductor devices such as direct-current voltage, position limiters and the like.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations and modifications of the present invention will be apparent to those of ordinary skill in the art in light of the foregoing description. It is not necessary here nor is it exhaustive of all embodiments. And obvious variations or modifications thereof are contemplated as falling within the scope of the present invention.
Claims (9)
1. The schottky junction with the continuously adjustable open-circuit voltage is characterized by comprising a strontium titanate substrate and an LSMO layer arranged on the strontium titanate substrate, wherein the surface part of the LSMO layer is covered with a barium strontium titanate layer, and the surface part of the barium strontium titanate layer is covered with a metal electrode; one ends of the metal electrode, the barium strontium titanate layer and the LSMO layer are flush, and the other ends of the metal electrode, the barium strontium titanate layer and the LSMO layer are in a step shape;
the material of the strontium barium titanate layer is manganese doped strontium barium titanate, and the general formula is Ba 0.6 Sr 0.4 Ti x1- Mn x O 3 Which is provided withMiddle 0 < >x≤0.015；
The thickness of the manganese doped barium strontium titanate film is 260-350nm.
2. The continuously adjustable open circuit voltage schottky junction of claim 1 wherein said metal electrode is an Au electrode or a Pt electrode.
3. The method for manufacturing a schottky junction with continuously adjustable open circuit voltage according to claim 1 or 2, comprising the steps of,
s1: preparing an LSMO target and a manganese-doped barium strontium titanate target;
s2: growing an LSMO layer on a strontium titanate substrate;
s3: growing a manganese doped barium strontium titanate film on the LSMO layer in situ, and cooling to room temperature;
s4: and depositing a metal electrode on the manganese-doped barium strontium titanate film to obtain the Schottky junction with continuously adjustable open-circuit voltage.
4. A method according to claim 3, wherein in step S2 the LSMO layer is grown at a temperature of 650-750 ℃ and at an oxygen pressure of 0.25-0.35 mbar.
5. The method of claim 3, wherein the LSMO layer has a thickness of 80 to 120 a nm a.
6. A method according to claim 3, wherein in step S2, after growing the LSMO layer, the resulting material is annealed in situ for 40-50min at an oxygen pressure of 0.4-0.6 bar.
7. A method according to claim 3, wherein in step S3, the temperature of the growth of the manganese doped barium strontium titanate film is 600-800 ℃ and the oxygen pressure is 0.08-0.12 mbar.
8. A method according to claim 3, wherein in step S3, the temperature is reduced to room temperature at an oxygen pressure of 0.7-0.9 mbar.
9. Use of a schottky junction with continuously adjustable open circuit voltage according to claim 1 or 2 in a semiconductor device.
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| US7834367B2 (en) * | 2007-01-19 | 2010-11-16 | Cree, Inc. | Low voltage diode with reduced parasitic resistance and method for fabricating |
| US9202895B2 (en) * | 2010-05-07 | 2015-12-01 | Japan Science And Technology Agency | Process for production of functional device, process for production of ferroelectric material layer, process for production of field effect transistor, thin film transistor, field effect transistor, and piezoelectric inkjet head |
| US10170332B2 (en) * | 2014-06-30 | 2019-01-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFET thermal protection methods and related structures |
| US9349866B2 (en) * | 2014-10-10 | 2016-05-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for FinFET device |
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| CN1546426A (en) * | 2003-12-08 | 2004-11-17 | 华中科技大学 | Barium strontium titanate ferroelectric film material and its preparation method |
| WO2008032904A1 (en) * | 2006-09-15 | 2008-03-20 | Korea Institute Of Science And Technology | Dielectric thin film and thin film transistor using the same |
| CN108128853A (en) * | 2017-12-29 | 2018-06-08 | 苏州科技大学 | Cerium dopping manganese oxide electrode, preparation method and the usage |
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