CN114093804A - 一种基于玻璃载盘的缓坡状晶圆加工工艺 - Google Patents

一种基于玻璃载盘的缓坡状晶圆加工工艺 Download PDF

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CN114093804A
CN114093804A CN202111340998.6A CN202111340998A CN114093804A CN 114093804 A CN114093804 A CN 114093804A CN 202111340998 A CN202111340998 A CN 202111340998A CN 114093804 A CN114093804 A CN 114093804A
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严立巍
符德荣
陈政勋
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Shaoxing Tongxincheng Integrated Circuit Co ltd
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    • HELECTRICITY
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    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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Abstract

本发明公开一种基于玻璃载盘的缓坡状晶圆加工工艺,包括以下步骤:S1、蚀刻形成缓坡状晶圆结构;S2、将的晶圆放置在第一载盘上进行晶圆背面制程;S3、涂布聚酰亚胺使晶圆背面平坦化,在晶圆背面倒扣第二载盘,翻转晶圆后移除第一载盘;S4、在晶圆正面进行镀膜、蚀刻形成金属PAD,然后涂布聚酰亚胺,利用光刻、氧气电浆在正面聚酰亚胺层表面对应金属PAD处开窗,然后进行化镀;S5、完成晶圆切割;S6、移除第二载盘,除去背面聚酰亚胺;S7、除去四周环形缓坡状边缘,利用第二切割模框翻转晶圆。本发明利用缓坡状晶圆先进行背面金属制程,再进行正面制程时无需考虑温度的限制,同时利用聚酰亚胺填充及玻璃载盘的支撑,缓冲应力,避免晶圆破损裂片。

Description

一种基于玻璃载盘的缓坡状晶圆加工工艺
技术领域
本发明涉及半导体加工技术领域,具体的是一种基于玻璃载盘的缓坡状晶圆加工工艺。
背景技术
晶圆指制造半导体晶体管或集成电路的衬底(也叫基片)。由于是晶体材料,其形状为圆形,所以称为晶圆。衬底材料有硅、锗、GaAs、InP、GaN等。由于硅最为常用,如果没有特别指明晶体材料,通常指硅晶圆。随着半导体行业的发展,为了满足电子器件微型化,多功能化和智能化的要求,对超薄晶圆的需求日益增长。
现行超薄晶圆生产工艺都是先完成晶圆的正面制程,然后把正面键合玻璃载板,再对背面减薄并完成后续的晶圆背面制程,但是由于背面制程中存在高温步骤,而黏着剂为高分子材料最高只能承受350℃加热装程,且正面已完成金属装程,AI或Cu皆最多能承受560℃的加热装程,因此无法在玻璃载板键合的晶圆上实施,但解键合后的晶圆很容易产生破片及损伤。
发明内容
为解决上述背景技术中提到的不足,本发明的目的在于提供一种基于玻璃载盘的缓坡状晶圆加工工艺,利用缓坡状晶圆先进行背面金属制程,再进行正面制程时无需考虑温度的限制,同时利用聚酰亚胺填充及玻璃载盘的支撑,缓冲应力,避免晶圆破损裂片。
本发明的目的可以通过以下技术方案实现:
一种基于玻璃载盘的缓坡状晶圆加工工艺,包括以下步骤:
S1、蚀刻晶圆背面使边缘形成缓坡状晶圆结构;
S2、将背面完成缓坡状的晶圆放置在第一载盘上,晶圆正面与第一载盘表面的凹槽平面无缝贴合,然后在进行晶圆背面进行离子植入、高温回火及背面金属制程;
S3、在晶圆背面涂布聚酰亚胺,通过氧气电浆蚀刻除去晶圆缓坡外的聚酰亚胺使晶圆背面平坦化,然后在晶圆背面的上方倒扣第二载盘,晶圆背面与第二载盘表面的凹槽平面无缝贴合,整体翻转第一载盘、晶圆和第二载盘后移除第一载盘;
S4、在晶圆正面进行镀膜、蚀刻形成金属PAD,然后涂布聚酰亚胺,形成对晶圆正面和第二载盘的全覆盖,利用光刻、氧气电浆在正面聚酰亚胺层表面对应金属PAD处开窗,然后进行化镀;
S5、利用光刻、氧气电浆在正面聚酰亚胺层表面蚀刻形成切割通道,再通过含氟电浆蚀刻晶圆切割道至背面金属层,最后通过激光切断背面金属;
S6、将利用溶剂或氧气电浆除去晶圆正面的四周环形区域的聚亚酰胺,然后将晶圆正面贴附在第一切割模框上,移除第二载盘,再利用氧气电浆除去背面聚酰亚胺;
S7、除去四周环形缓坡状边缘,然后将晶圆背面贴附在第二切割模框上,整体翻转第一切割模框、晶圆和第二切割模框,通过紫外光移除第一切割模框黏性,取下第一切割模框即可。
进一步优选地,第一载盘和第二载盘表面均开设有凹槽,凹槽直径大于晶圆直径,凹槽深度小于晶圆厚度,第一载盘和第二载盘通过真空吸盘吸附取走。
进一步优选地,步骤S4中通过蒸镀或溅镀的方式进行正面镀膜。
进一步优选地,步骤S4中化镀Ni/Pd、Ni/Au或Ni/Pd/Au。
本发明的有益效果:
本发明利用缓坡状晶圆先进行背面金属制程,再进行正面制程时无需考虑温度的限制,通知利用聚酰亚胺填充及玻璃载盘的支撑,缓冲正面金属厚膜及电镀、化镀过程中产生的应力,移除背面玻璃载盘后再除缓坡内聚酰亚胺可以确保晶圆在厚金属镀膜后不至翘曲破损。
附图说明
下面结合附图对本发明作进一步的说明。
图1是本发明步骤S1的工艺流程示意图;
图2是本发明步骤S2的工艺流程示意图;
图3是本发明步骤S3的工艺流程示意图;
图4是本发明步骤S4的工艺流程示意图;
图5是本发明步骤S5的工艺流程示意图;
图6是本发明步骤S6的工艺流程示意图;
图7是本发明步骤S7的工艺流程示意图。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其它实施例,都属于本发明保护的范围。
在本发明的描述中,需要理解的是,术语“开孔”、“上”、“下”、“厚度”、“顶”、“中”、“长度”、“内”、“四周”等指示方位或位置关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的组件或元件必须具有特定的方位,以特定的方位构造和操作,因此不能理解为对本发明的限制。
一种基于玻璃载盘的缓坡状晶圆加工工艺,包括以下步骤:
S1、蚀刻晶圆背面使边缘形成缓坡状晶圆结构;
S2、将背面完成缓坡状的晶圆放置在第一载盘上,晶圆正面与第一载盘表面的凹槽平面无缝贴合,然后在进行晶圆背面进行离子植入、高温回火及背面金属制程;
S3、在晶圆背面涂布聚酰亚胺,通过氧气电浆蚀刻除去晶圆缓坡外的聚酰亚胺使晶圆背面平坦化,然后在晶圆背面的上方倒扣第二载盘,晶圆背面与第二载盘表面的凹槽平面无缝贴合,整体翻转第一载盘、晶圆和第二载盘后通过真空吸盘吸附取走第一载盘;
S4、在晶圆正面进行镀膜、蚀刻形成金属PAD,然后涂布聚酰亚胺,形成对晶圆正面和第二载盘的全覆盖,利用光刻、氧气电浆在正面聚酰亚胺层表面对应金属PAD处开窗,然后进行化镀Ni/Pd、Ni/Au或Ni/Pd/Au;
S5、利用光刻、氧气电浆在正面聚酰亚胺层表面蚀刻形成切割通道,再通过含氟电浆蚀刻晶圆切割道至背面金属层,最后通过激光切断背面金属;
S6、将利用溶剂或氧气电浆除去晶圆正面的四周环形区域的聚亚酰胺,然后将晶圆正面贴附在第一切割模框上,通过真空吸盘吸附取走第二载盘,再利用氧气电浆除去背面聚酰亚胺;
S7、除去四周环形缓坡状边缘,然后将晶圆背面贴附在第二切割模框上,整体翻转第一切割模框、晶圆和第二切割模框,通过紫外光移除第一切割模框黏性,取下第一切割模框即可。
在本说明书的描述中,参考术语“一个实施例”、“示例”、“具体示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中,对上述术语的示意性表述不一定指的是相同的实施例或示例。而且,描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
以上显示和描述了本发明的基本原理、主要特征和本发明的优点。本行业的技术人员应该了解,本发明不受上述实施例的限制,上述实施例和说明书中描述的只是说明本发明的原理,在不脱离本发明精神和范围的前提下,本发明还会有各种变化和改进,这些变化和改进都落入要求保护的本发明范围内。

Claims (4)

1.一种基于玻璃载盘的缓坡状晶圆加工工艺,其特征在于,包括以下步骤:
S1、蚀刻晶圆背面使边缘形成缓坡状晶圆结构;
S2、将背面完成缓坡状的晶圆放置在第一载盘上,晶圆正面与第一载盘表面的凹槽平面无缝贴合,然后在进行晶圆背面进行离子植入、高温回火及背面金属制程;
S3、在晶圆背面涂布聚酰亚胺,通过氧气电浆蚀刻除去晶圆缓坡外的聚酰亚胺使晶圆背面平坦化,然后在晶圆背面的上方倒扣第二载盘,晶圆背面与第二载盘表面的凹槽平面无缝贴合,整体翻转第一载盘、晶圆和第二载盘后移除第一载盘;
S4、在晶圆正面进行镀膜、蚀刻形成金属PAD,然后涂布聚酰亚胺,形成对晶圆正面和第二载盘的全覆盖,利用光刻、氧气电浆在正面聚酰亚胺层表面对应金属PAD处开窗,然后进行化镀;
S5、利用光刻、氧气电浆在正面聚酰亚胺层表面蚀刻形成切割通道,再通过含氟电浆蚀刻晶圆切割道至背面金属层,最后通过激光切断背面金属;
S6、将利用溶剂或氧气电浆除去晶圆正面的四周环形区域的聚亚酰胺,然后将晶圆正面贴附在第一切割模框上,移除第二载盘,再利用氧气电浆除去背面聚酰亚胺;
S7、除去四周环形缓坡状边缘,然后将晶圆背面贴附在第二切割模框上,整体翻转第一切割模框、晶圆和第二切割模框,通过紫外光移除第一切割模框黏性,取下第一切割模框即可。
2.根据权利要求1所述的基于玻璃载盘的缓坡状晶圆加工工艺,其特征在于,所述第一载盘和第二载盘表面均开设有凹槽,所述凹槽直径大于晶圆直径,所述凹槽深度小于晶圆厚度,所述第一载盘和第二载盘通过真空吸盘吸附取走。
3.根据权利要求1所述的基于玻璃载盘的缓坡状晶圆加工工艺,其特征在于,所述步骤S4中通过蒸镀或溅镀的方式进行正面镀膜。
4.根据权利要求1所述的基于玻璃载盘的缓坡状晶圆加工工艺,其特征在于,所述步骤S4中化镀Ni/Pd、Ni/Au或Ni/Pd/Au。
CN202111340998.6A 2021-11-12 2021-11-12 一种基于玻璃载盘的缓坡状晶圆加工工艺 Pending CN114093804A (zh)

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