CN114014682A - 一种免研磨的陶瓷覆铜板双面同时烧结方法 - Google Patents

一种免研磨的陶瓷覆铜板双面同时烧结方法 Download PDF

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CN114014682A
CN114014682A CN202111339080.XA CN202111339080A CN114014682A CN 114014682 A CN114014682 A CN 114014682A CN 202111339080 A CN202111339080 A CN 202111339080A CN 114014682 A CN114014682 A CN 114014682A
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李炎
贺贤汉
朱锐
董明锋
蔡俊
陆玉龙
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Jiangsu Fulehua Semiconductor Technology Co ltd
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Abstract

本发明公开了一种免研磨的陶瓷覆铜板双面同时烧结方法。本发明通过设计治具形状,在治具表面涂覆陶瓷层的方式来减少治具对铜片的侵蚀作用,并通过一次烧结后铜片上留下的侵蚀印记进行加工,将高温下铜片与治具发生反应的部分蚀刻掉,且下方铜片制备为图形面,依靠治具的空间结构进行托举,克服了以往双面烧结法只能用上方铜片作为图形面的局限,丰富了产品类别,提高了品质和良品率,拓展了双面同时烧结法的使用方向,节约生产的成本与时间。

Description

一种免研磨的陶瓷覆铜板双面同时烧结方法
技术领域
本发明涉及新型电子元件封装技术领域,具体为一种免研磨的陶瓷覆铜板双面同时烧结方法。
背景技术
功率半导体陶瓷覆铜载板制造过程中最关键工序即为铜瓷键合过程(烧结工艺),其通过超过1000℃以上的高温和特定气体氛围实现了瓷片的金属化。目前业内通用的烧结方法包含单面烧结和双面同时烧结。
单面烧结较为通用,几乎所有公司均含此工艺,但该工艺由于铜瓷间热膨胀系数的差异,在加热时存在第一面烧结后瓷片受应力过大的问题,且单面烧结加工两个面要加热两次,经历两个高温过程,会使铜板内的铜晶粒在高温下生长,使铜板的晶粒形貌发生改变,并最终对陶瓷基板的性能造成不利影响;双面同时烧结则可同时对陶瓷基板的两个面进行加工,花费时间少,能源综合利用率高,且成本更低,但是需要使用特定治具,目前少数公司也能实现,该工艺为保持下方铜片与陶瓷的充分粘连,需要将铜片直接置于治具表面,因此烧结后下方铜片表面会有明显印记,必须经过后续的研磨工艺才能获得均一性的表面,而追加的研磨工艺,有一定概率会造成铜面刷痕,良品率难以得到保证。此外,该方法固定了下方铜片为研磨面,产品翘曲无法通过翻转面次来改变,应用方向受到了很大限制。
发明内容
本发明的目的在于提供一种免研磨的陶瓷覆铜板双面同时烧结方法,以解决上述背景技术中提出的问题。
为了解决上述技术问题,本发明提供如下技术方案:一种免研磨的陶瓷覆铜板双面同时烧结方法。所述一种免研磨的陶瓷覆铜板双面同时烧结方法,包括如下步骤:
S1.制备治具坯体;
S2.水刀加工治具坯体得治具;
S3.按照治具-铜片-陶瓷-铜片的顺序,自上而下堆叠排列,双面同时烧结,得到覆铜基板;
S4.取覆铜基板,下表面进行蚀刻,将覆铜板与治具接触面烧结后形成的印记去除,即可得成品。
进一步的,所述S1中,治具坯体采用碳化硅材料加工而成,其具体形状可针对特定产品图形进行排版设计。
功率半导体陶瓷覆铜载板制造过程中最关键的工序即为铜瓷键合过程(烧结工艺),其是通过超过1000℃以上的高温和特定气体氛围实现瓷片的金属化。碳化硅材料可承受1100℃以上的高温,可以耐受功率半导体陶瓷覆铜载板制造过程的高温环境,且碳化硅材料内部碳原子与硅原子通过共价键以空间四面体的结构结合在一起,性质稳定,不易与其余物质发生反应,可以减少对其表面陶瓷涂覆层与铜片的侵蚀,以满足产品加工过程中的要求。
进一步的,所述S2中,水刀加工治具坯体步骤为使用水刀将治具加工形成若干个中空框架,所述中空框架为矩形,将框架骨架加工成上细下宽(上2.5-2.8mm,下:3.0-3.2mm)样式,使其骨架纵截面为梯形。
优选的,所述框架大小应根据所需产品大小以及客户需求制备,所述骨架上表面宽度应小于设计图纸中的线路间距。
优选的,所述治具坯体骨架十字连接处进行R角处理,并根据不同产品采用不同设计,使其适应不同R角的线路。
将治具坯体中间骨架加工为上窄下款的梯形,可以提升其中间骨架的应力承受能力,并借助其独特的空间形状,可起到对铜片的托举作用,防止后期铜片蚀刻后,造成治具与陶瓷基板过多,使产品品质受到影响。
进一步的,步骤S2中,所述治具表面涂覆有陶瓷涂层,制备所述陶瓷涂层包括以下步骤:
S21.按重量份数计,向30-40份有机溶液内加入50-80份陶瓷粉末,之后加入0.5-3份烧结助剂、0.5-2份增稠剂与0.1-0.5份分散剂,一同置于反应釜内,超声搅拌混合处理,得到陶瓷悬浮料浆;
S22.将所述陶瓷悬浮料浆喷涂在治具坯体表面,之后进行烧结,得到治具。
进一步的,步骤S21中,所述陶瓷粉末为氮化铝、氧化铝陶瓷粉末中的任一种,且其粒径小于80μm。
进一步的,步骤S21中,所述有机溶液为丙酮、乙酸乙酯中的一种或两种;所述增稠剂为甲基纤维素、羧甲基纤维素、羟乙基纤维素中的一种或多种;所述分散剂为硬脂酸,所述烧结助剂为CuO-TiO2或MnO2-TiO2-MgO烧结助剂中的一种或多种。
进一步的,步骤S21中所述超声搅拌频率为20-30KHz,持续时间为15-30分钟。
进一步的,步骤S22中,所述烧结方式为:将喷涂了陶瓷粉末的治具坯体置于窑内,升温至300-350℃,保温30-45分钟,之后以每分钟升温50℃的速率升温至1500-1650℃,保温1-2小时候,炉冷至800-1000℃,保温30分钟;保温结束后炉冷至室温即可得成品治具。
治具坯体的制备材料为碳化硅材料,其有着化学性能稳定、热膨胀系数小的优点,纯的碳化硅是无色透明的晶体,而制备治具坯体的工业碳化硅则是由电阻炉高温冶炼而成的,由于原料及反应不充分的缘故,工业碳化硅内部会含有碳及铁等元素,以至于显现黑色,在高温下,这些元素会与铜板发生反应,使与之接触的铜板性能产生变化,不再均一,无法满足电子性能的要求。因此通常的双面烧结法,均需对这些接触部位进行打磨处理,而这些打磨工艺则会不可避免的造成铜面划痕,使良品率难以保证,且该方法固定了下方铜片为研磨面,产品翘曲无法通过翻转面次来改变,应用方向受到了很大限制。
因此为减小治具配体材料对铜板带来的侵蚀,本发明采取在坯体外部增设陶瓷涂覆层的方式来减少侵蚀作用。工业碳化硅材料可耐受1600-1700℃的高温。一般氮化铝陶瓷与氧化铝陶瓷烧结温度较高,均在1700℃以上,本发明所制备的陶瓷涂覆层原料内含有烧结助剂,高温下,烧结助剂内的成分会与陶瓷粉末发生共融现象,降低烧结过程中的共熔点,使陶瓷的烧结温度下降至碳化硅工作温度内,且本发明中所使用的陶瓷粉末粒径小,比表面积较大,具有更高的表面能,可进一步降低烧结点,提高陶瓷致密度,最终形成陶瓷涂覆层。
制备完成的陶瓷涂覆层,性质稳定,高温时,对铜板的侵蚀作用小,且本发明所使用的氧化铝或氮化铝陶瓷涂覆层,其本身不会与铜片发生反应,而是以铜瓷键合的方式结合在一起,经第一次烧结,二者接触面产生结合层后,后续烧结的过程里,该结合层会组织后续二者的结合过程,使铜片使用寿命更为长久;尤以氮化铝陶瓷,具有着未经氧化不会与铜片结合的特性,可以最大程度减少对下方铜片的侵蚀,保持其性质均一。此外碳化硅材料在高温下会在其外表面形成一层脱碳的,致密的SiO2膜,但是高温以及氧分压较低的情况下,即在氮气氛围内,对陶瓷基板进行高温覆铜处理时,会使碳化硅表面的SiO2膜被迅速破坏,并生成一种挥发性的SiC,本发明通过在治具坯体表面涂覆制备陶瓷涂覆膜的方式,取代了原有的SiO2膜,防止了其在高温下的分解。
碳化硅属于硬脆材料,在制备治具坯体的过程中,水刀加工会不可避免的对治具坯体造成损伤,产生加工缺陷,这种缺陷极易成为材料的裂纹来源。无压烧结的碳化硅材料的烧结点在1800℃以上,而在制备陶瓷涂覆层时,添加量烧结助剂的氮化铝和氧化铝陶瓷涂覆层的烧结温度可控制在1500-1650℃,低于碳化硅材料的烧结点,在此温度下,经高温加热后,碳化硅会再次经历晶粒生长、扩散传质的过程,来使裂纹愈合或钝化,改善材料性能;而且陶瓷涂覆层与碳化硅坯体作为不同相的复合体系,具有不同的热膨胀系数,在冷却时会产生相间应力,同样需要经过高温退火,在800-1000℃进行保温退火,利用陶瓷涂覆层晶粒间的变化来减少应力,弥合微裂纹,提高两者的结合能力。
进一步的,步骤S3中,所述烧结步骤为:将堆叠有铜片、陶瓷的治具置于传送带上,之后沿传送带方向入炉烧结,炉内烧结温度为1000-1080℃,氮气氛围保护。
一般双面同时烧结法由于下层铜片与治具的接触,会造成铜片表面的不均一,而无法将陶瓷基板的下表面制备为图形面,而本发明则可根据产品制备治具形状,且将治具中间起支撑作用的骨架加工为上表面宽度小于图形间距的梯形,因此本发明可将陶瓷基板下表面制备为图形面,在制备时注意图形间距,即可得成品,且陶瓷基板上所有与治具接触铜片区域均已被完全刻蚀掉,因此不会对外观和性能造成任何影响。
与现有技术相比,本发明所达到的有益效果是:本发明提供了一种专用于陶瓷覆铜载板烧结过程的免研磨的陶瓷覆铜板双面同时烧结方法,可实现双面同时烧结,且烧结后表面无需研磨处理,既实现了烧结产能翻倍,又避免了许多研磨类不良,从而节约了成本,提高了品质和良品率。且实现了下方铜片用于图形面,丰富了适用产品类别,拓展了双面同时烧结技术的使用方向。
附图说明
附图用来提供对本发明的进一步理解,并且构成说明书的一部分,与本发明的实施例一起用于解释本发明,并不构成对本发明的限制。在附图中:
图1是本发明的治具成品;
图2是本发明的烧结后下层铜片;
图3是本发明的成品。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
实施例1
S1.根据陶瓷覆铜基板参数,制备治具坯体;
S2.使用水刀加工治具坯体,将治具坯体加工为中空框架,框架骨架加工成纵截面为梯形,上部宽度为2.8mm,下部宽度为3mm的十字格样式,使其骨架面为梯形,并对骨架十字连接处加工成R角;
称取200g乙酸乙酯溶液倒入反应釜内,向其内部加入400g氮化铝陶瓷粉末,之后加入10g CuO-TiO2烧结助剂10g甲基纤维素与5g硬脂酸,使用超声搅拌,以25KHz的频率分散30分钟后得到陶瓷悬浮液;将陶瓷悬浮液均匀喷覆在治具坯体表面后,将治具坯体移入窑内进行烧结,升温前期,以20℃每分钟的升温速率升温至300℃,保温半小时后继续升温,以每分钟升温50℃的速率升温至1550℃,保温2小时;保温结束后,进行退火处理,停止加热,待炉温冷却至1000摄氏度后,继续保温30分钟,减少陶瓷涂层及治具坯体的内部应力,防止坯体开裂;保温结束后,炉冷至室温即可得成品治具。
S3按照治具-铜片-陶瓷-铜片的顺序,将其自上而下堆叠排列在传送带上,之后沿传送带方向入炉烧结,炉内烧结温度为1080℃,烧结60min,氮气氛围保护。
S4.取烧结后的覆铜基板,将其下表面制备为图形面,制备时注意图形间距对位,即可得成品。
实施例2
S1.根据陶瓷覆铜基板参数,制备治具坯体;
S2.使用水刀加工治具坯体,将治具坯体加工为中空框架,框架骨架加工成纵截面为梯形,上部宽度为2.8mm,下部宽度为3mm的十字格样式,使其骨架面为梯形,并对骨架十字连接处加工成R角;
称取200g乙酸乙酯溶液倒入反应釜内,向其内部加入400g氮化铝陶瓷粉末,之后加入10gMnO2-TiO2-MgO烧结助剂10g甲基纤维素与5g硬脂酸,使用超声搅拌,以25KHz的频率分散30分钟后得到陶瓷悬浮液;将陶瓷悬浮液均匀喷覆在治具坯体表面后,将治具坯体移入窑内进行烧结,升温前期,以20℃每分钟的升温速率升温至300℃,保温半小时后继续升温,以每分钟升温50℃的速率升温至1550℃,保温2小时;保温结束后,进行退火处理,停止加热,待炉温冷却至800摄氏度后,继续保温30分钟,减少陶瓷涂层及治具坯体的内部应力,防止坯体开裂;保温结束后,炉冷至室温即可得成品治具。
S3按照治具-铜片-陶瓷-铜片的顺序,将其自上而下堆叠排列在传送带上,之后沿传送带方向入炉烧结,炉内烧结温度为1080℃,烧结60min,氮气氛围保护。
S4.取烧结后的覆铜基板,将其下表面制备为图形面,制备时注意图形间距对位,即可得成品。
实施例3
S1.根据陶瓷覆铜基板参数,制备治具坯体;
S2.使用水刀加工治具坯体,将治具坯体加工为中空框架,框架骨架加工成纵截面为梯形,上部宽度为2.8mm,下部宽度为3mm的十字格样式,使其骨架面为梯形,并对骨架十字连接处加工成R角;
称取200g乙酸乙酯溶液倒入反应釜内,向其内部加入400g氧化铝陶瓷粉末,之后加入10gMnO2-TiO2-MgO烧结助剂10g甲基纤维素与5g硬脂酸,使用超声搅拌,以25KHz的频率分散30分钟后得到陶瓷悬浮液;将陶瓷悬浮液均匀喷覆在治具坯体表面后,将治具坯体移入窑内进行烧结,升温前期,以20℃每分钟的升温速率升温至300℃,保温半小时后继续升温,以每分钟升温50℃的速率升温至1650℃,保温1小时;保温结束后,进行退火处理,停止加热,待炉温冷却至1000摄氏度后,继续保温30分钟,减少陶瓷涂层及治具坯体的内部应力,防止坯体开裂;保温结束后,炉冷至室温即可得成品治具。
S3按照治具-铜片-陶瓷-铜片的顺序,将其自上而下堆叠排列在传送带上,之后沿传送带方向入炉烧结,炉内烧结温度为1080℃,烧结60min,氮气氛围保护。
S4.取烧结后的覆铜基板,将其下表面制备为图形面,制备时注意图形间距对位,即可得成品。
实施例4
S1.根据陶瓷覆铜基板参数,制备治具坯体;
S2.使用水刀加工治具坯体,将治具坯体加工为中空框架,框架骨架加工成纵截面为梯形,上部宽度为2.8mm,下部宽度为3mm的十字格样式,使其骨架面为梯形,并对骨架十字连接处加工成R角;
称取200g乙酸乙酯溶液倒入反应釜内,向其内部加入400g氧化铝陶瓷粉末,之后加入10g CuO-TiO2烧结助剂10g甲基纤维素与5g硬脂酸,使用超声搅拌,以25KHz的频率分散30分钟后得到陶瓷悬浮液;将陶瓷悬浮液均匀喷覆在治具坯体表面后,将治具坯体移入窑内进行烧结,升温前期,以20℃每分钟的升温速率升温至300℃,保温半小时后继续升温,以每分钟升温50℃的速率升温至1550℃,保温2小时;保温结束后,进行退火处理,停止加热,待炉温冷却至1000摄氏度后,继续保温30分钟,减少陶瓷涂层及治具坯体的内部应力,防止坯体开裂;保温结束后,炉冷至室温即可得成品治具。
S3按照治具-铜片-陶瓷-铜片的顺序,将其自上而下堆叠排列在传送带上,之后沿传送带方向入炉烧结,炉内烧结温度为1080℃,烧结60min,氮气氛围保护。
S4.取烧结后的覆铜基板,将其下表面制备为图形面,制备时注意图形间距对位,即可得成品。
对比例1
S1.根据陶瓷覆铜基板参数,制备治具坯体;
S2.使用水刀加工治具坯体,将治具坯体加工为中空框架,框架骨架加工成纵截面为梯形,上部宽度为2.8mm,下部宽度为3mm的十字格样式,使其骨架面为梯形,并对骨架十字连接处加工成R角;
称取200g乙酸乙酯溶液倒入反应釜内,向其内部加入400g氮化铝陶瓷粉末,之后加入20g CuO-TiO2烧结助剂10g甲基纤维素与5g硬脂酸,使用超声搅拌,以25KHz的频率分散30分钟后得到陶瓷悬浮液;将陶瓷悬浮液均匀喷覆在治具坯体表面后,将治具坯体移入窑内进行烧结,升温前期,以20℃每分钟的升温速率升温至300℃,保温半小时后继续升温,以每分钟升温50℃的速率升温至1450℃,保温2小时;保温结束后,进行退火处理,停止加热,待炉温冷却至800摄氏度后,继续保温30分钟,减少陶瓷涂层及治具坯体的内部应力,防止坯体开裂;保温结束后,炉冷至室温即可得成品治具。
S3按照治具-铜片-陶瓷-铜片的顺序,将其自上而下堆叠排列在传送带上,之后沿传送带方向入炉烧结,炉内烧结温度为1080℃,烧结60min,氮气氛围保护。
S4.取烧结后的覆铜基板,将其下表面制备为图形面,制备时注意图形间距对位,即可得成品。
对比例2
S1.根据陶瓷覆铜基板参数,制备治具坯体;
S2.使用水刀加工治具坯体,将治具坯体加工为中空框架,框架骨架加工成纵截面为梯形,上部宽度为2.8mm,下部宽度为3mm的十字格样式,使其骨架面为梯形,并对骨架十字连接处加工成R角;
称取200g乙酸乙酯溶液倒入反应釜内,向其内部加入300g氮化铝陶瓷粉末,之后加入20g CuO-TiO2烧结助剂10g甲基纤维素与5g硬脂酸,使用超声搅拌,以25KHz的频率分散30分钟后得到陶瓷悬浮液;将陶瓷悬浮液均匀喷覆在治具坯体表面后,将治具坯体移入窑内进行烧结,升温前期,以20℃每分钟的升温速率升温至300℃,保温半小时后继续升温,以每分钟升温50℃的速率升温至1450℃,保温2小时;保温结束后,进行退火处理,停止加热,待炉温冷却至800摄氏度后,继续保温30分钟,减少陶瓷涂层及治具坯体的内部应力S3按照治具-铜片-陶瓷-铜片的顺序,将其自上而下堆叠排列在传送带上,之后沿传送带方向入炉烧结,炉内烧结温度为1080℃,烧结60min,氮气氛围保护。
S4.取烧结后的覆铜基板,将其下表面制备为图形面,制备时注意图形间距对位,即可得成品。
对比例3
S1.根据陶瓷覆铜基板参数,制备治具坯体;
S2.使用水刀加工治具坯体,将治具坯体加工为中空框架,框架骨架加工成纵截面为梯形,上部宽度为2.8mm,下部宽度为3mm的十字格样式,使其骨架面为梯形,并对骨架十字连接处加工成R角;
称取200g乙酸乙酯溶液倒入反应釜内,向其内部加入400g氧化铝陶瓷粉末,之后加入20g CuO-TiO2烧结助剂10g甲基纤维素与5g硬脂酸,使用超声搅拌,以25KHz的频率分散30分钟后得到陶瓷悬浮液;将陶瓷悬浮液均匀喷覆在治具坯体表面后,将治具坯体移入窑内进行烧结,升温前期,以20℃每分钟的升温速率升温至300℃,保温半小时后继续升温,以每分钟升温50℃的速率升温至1350℃,保温2小时;保温结束后,进行退火处理,停止加热,待炉温冷却至800摄氏度后,继续保温30分钟,减少陶瓷涂层及治具坯体的内部应力,防止坯体开裂;保温结束后,炉冷至室温即可得成品治具。
S3按照治具-铜片-陶瓷-铜片的顺序,将其自上而下堆叠排列在传送带上,之后沿传送带方向入炉烧结,炉内烧结温度为1080℃,烧结60min,氮气氛围保护。
S4.取烧结后的覆铜基板,将其下表面制备为图形面,制备时注意图形间距对位,即可得成品。
对比例4
S1.根据陶瓷覆铜基板参数,制备治具坯体;
S2.使用水刀加工治具坯体,将治具坯体加工为中空框架,框架骨架加工成纵截面为梯形,上部宽度为2.8mm,下部宽度为3mm的十字格样式,使其骨架面为梯形,并对骨架十字连接处加工成R角;
称取200g乙酸乙酯溶液倒入反应釜内,向其内部加入300g氧化铝陶瓷粉末,之后加入20g CuO-TiO2烧结助剂10g甲基纤维素与5g硬脂酸,使用超声搅拌,以25KHz的频率分散30分钟后得到陶瓷悬浮液;将陶瓷悬浮液均匀喷覆在治具坯体表面后,将治具坯体移入窑内进行烧结,升温前期,以20℃每分钟的升温速率升温至300℃,保温半小时后继续升温,以每分钟升温50℃的速率升温至1350℃,保温2小时;保温结束后,进行退火处理,停止加热,待炉温冷却至800摄氏度后,继续保温30分钟,减少陶瓷涂层及治具坯体的内部应力,防止坯体开裂;保温结束后,炉冷至室温即可得成品治具。
S3按照治具-铜片-陶瓷-铜片的顺序,将其自上而下堆叠排列在传送带上,之后沿传送带方向入炉烧结,炉内烧结温度为1080℃,烧结60min,氮气氛围保护。
S4.取烧结后的覆铜基板,将其下表面制备为图形面,制备时注意图形间距对位,即可得成品。
对实施例1-4和对比例1-4成品进行观察,二者下表面均未留下治具接触痕迹,外观和性能无影响。
对实施例1-4和对比例1-4所制得治具,使用载荷检测的方式对其进行微裂纹检测,测试结果见下表。
Figure BDA0003351779330000091
需要说明的是,在本文中,诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来,而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且,术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含,从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素,而且还包括没有明确列出的其他要素,或者是还包括为这种过程、方法、物品或者设备所固有的要素。
最后应说明的是:以上所述仅为本发明的优选实施例而已,并不用于限制本发明,尽管参照前述实施例对本发明进行了详细的说明,对于本领域的技术人员来说,其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。

Claims (9)

1.一种免研磨的陶瓷覆铜板双面同时烧结方法,其特征在于,包括如下步骤:
S1.制备治具坯体;
S2.水刀加工治具坯体得治具;
S3.按照治具-铜片-陶瓷-铜片的顺序,自上而下堆叠排列,双面同时烧结,得到覆铜基板;
S4.取覆铜基板,下表面进行蚀刻,将覆铜板与治具接触面烧结后形成的印记去除,即可得成品。
2.根据权利要求1所述的一种免研磨的陶瓷覆铜板双面同时烧结方法,其特征在于:所述S1中,治具坯体采用碳化硅材料加工而成。
3.根据权利要求1所述的一种免研磨的陶瓷覆铜板双面同时烧结方法,其特征在于:所述S2中,水刀加工治具坯体步骤为:使用水刀将治具内部加工形成若干个中空框架,所述中空框架为矩形。
4.根据权利要求1所述的一种免研磨的陶瓷覆铜板双面同时烧结方法,其特征在于:步骤S3中,所述烧结步骤为:将堆叠有铜片、陶瓷的治具置于传送带上,之后沿传送带方向入炉烧结,炉内烧结温度为1000-1080℃,烧结时间5-100min,氮气氛围保护。
5.根据权利要求1所述的一种免研磨的陶瓷覆铜板双面同时烧结方法,其特征在于:步骤S2中,所述治具表面涂覆有陶瓷涂层,制备所述陶瓷涂层包括以下步骤:
S21.按重量份数计,向30-40份有机溶液内加入50-80份陶瓷粉末,之后加入0.5-3份烧结助剂、0.5-2份增稠剂与0.1-0.5份分散剂,一同置于反应釜内,超声搅拌混合处理,得到陶瓷悬浮料浆;
S22.将所述陶瓷悬浮料浆喷涂在治具坯体表面,之后进行烧结,得到治具。
6.根据权利要求5所述的一种免研磨的陶瓷覆铜板双面同时烧结方法,其特征在于:步骤S21中,所述陶瓷粉末为氮化铝、氧化铝陶瓷粉末中的任一种,且其粒径小于80μm。
7.根据权利要求5所述的一种免研磨的陶瓷覆铜板双面同时烧结方法,其特征在于:步骤S21中,所述有机溶液为丙酮、乙酸乙酯中的一种或两种;所述增稠剂为甲基纤维素、羧甲基纤维素、羟乙基纤维素中的一种或多种;所述分散剂为硬脂酸,所述烧结助剂为CuO-TiO2或MnO2-TiO2-MgO烧结助剂中的一种或多种。
8.根据权利要求5所述的一种免研磨的陶瓷覆铜板双面同时烧结方法,其特征在于:步骤S21中所述超声搅拌频率为20-30KHz,持续时间为15-30分钟。
9.根据权利要求5所述的一种免研磨的陶瓷覆铜板双面同时烧结方法,其特征在于:步骤S22中,所述烧结方式为:将喷涂了陶瓷粉末的治具坯体置于窑内,升温至300-350℃,保温30-45分钟,之后以每分钟升温50℃的速率升温至1500-1650℃,保温1-2小时后,炉冷至800-1000℃,保温30分钟;保温结束后炉冷至室温即可得成品治具。
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