CN113948607A - 一种用于制备n型选择性发射极晶硅电池的选择性扩散方法及其应用 - Google Patents
一种用于制备n型选择性发射极晶硅电池的选择性扩散方法及其应用 Download PDFInfo
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- CN113948607A CN113948607A CN202110988456.3A CN202110988456A CN113948607A CN 113948607 A CN113948607 A CN 113948607A CN 202110988456 A CN202110988456 A CN 202110988456A CN 113948607 A CN113948607 A CN 113948607A
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 115
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 55
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 93
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 69
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 69
- 239000010703 silicon Substances 0.000 claims abstract description 69
- 238000000151 deposition Methods 0.000 claims abstract description 64
- 229910052796 boron Inorganic materials 0.000 claims abstract description 59
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 55
- 229910052751 metal Inorganic materials 0.000 claims abstract description 41
- 239000002184 metal Substances 0.000 claims abstract description 41
- 238000004140 cleaning Methods 0.000 claims abstract description 27
- 229910052755 nonmetal Inorganic materials 0.000 claims abstract description 19
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 48
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 45
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 30
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 28
- 238000002161 passivation Methods 0.000 claims description 24
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 14
- 239000005388 borosilicate glass Substances 0.000 claims description 13
- 238000000137 annealing Methods 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 12
- 238000005245 sintering Methods 0.000 claims description 12
- 238000007747 plating Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000004804 winding Methods 0.000 claims 1
- 238000011049 filling Methods 0.000 abstract description 10
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 31
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 18
- 238000007650 screen-printing Methods 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 9
- 239000000969 carrier Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002003 electrode paste Substances 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110988456.3A CN113948607A (zh) | 2021-08-26 | 2021-08-26 | 一种用于制备n型选择性发射极晶硅电池的选择性扩散方法及其应用 |
| PCT/CN2021/116818 WO2023024154A1 (fr) | 2021-08-26 | 2021-09-07 | Procédé de diffusion sélective pour préparer une batterie au silicium cristallin à électrode émettrice sélective de type n et utilisation de celui-ci |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110988456.3A CN113948607A (zh) | 2021-08-26 | 2021-08-26 | 一种用于制备n型选择性发射极晶硅电池的选择性扩散方法及其应用 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113948607A true CN113948607A (zh) | 2022-01-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202110988456.3A Pending CN113948607A (zh) | 2021-08-26 | 2021-08-26 | 一种用于制备n型选择性发射极晶硅电池的选择性扩散方法及其应用 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN113948607A (fr) |
| WO (1) | WO2023024154A1 (fr) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112054066A (zh) * | 2019-06-06 | 2020-12-08 | 国家电投集团西安太阳能电力有限公司 | 一种发射极局部高掺杂的ibc电池及其制备方法 |
| CN115732597A (zh) * | 2022-12-01 | 2023-03-03 | 江苏杰太光电技术有限公司 | 一种TOPCon电池选择性发射极和钝化接触结构的制备方法 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101101936A (zh) * | 2007-07-10 | 2008-01-09 | 中电电气（南京）光伏有限公司 | 选择性发射结晶体硅太阳电池的制备方法 |
| CN101916801A (zh) * | 2010-07-21 | 2010-12-15 | 中山大学 | 一种选择性发射极晶体硅太阳电池的制备工艺 |
| CN201966219U (zh) * | 2010-12-21 | 2011-09-07 | 苏州阿特斯阳光电力科技有限公司 | 一种n型硅太阳能电池 |
| CN107482079A (zh) * | 2016-06-02 | 2017-12-15 | 上海神舟新能源发展有限公司 | 选择性发射结及隧穿氧化高效n型电池制备方法 |
| CN110299422A (zh) * | 2019-06-28 | 2019-10-01 | 天合光能股份有限公司 | 一种激光硼掺杂选择性发射极TOPCon结构电池及其制备方法 |
| CN111162145A (zh) * | 2020-02-26 | 2020-05-15 | 泰州中来光电科技有限公司 | 具有选择性发射极结构的钝化接触太阳能电池及其制备方法 |
| CN112186074A (zh) * | 2020-09-30 | 2021-01-05 | 浙江正泰太阳能科技有限公司 | 一种选择性发射极制备方法、太阳能电池及其制备方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5379767B2 (ja) * | 2010-09-02 | 2013-12-25 | ＰＶＧ Ｓｏｌｕｔｉｏｎｓ株式会社 | 太陽電池セルおよびその製造方法 |
| CN109671807A (zh) * | 2018-12-26 | 2019-04-23 | 浙江晶科能源有限公司 | 一种太阳能电池制备方法 |
| CN111370539A (zh) * | 2020-03-19 | 2020-07-03 | 泰州中来光电科技有限公司 | 一种具有选择性发射极的太阳能电池的制备方法 |
-
2021
- 2021-08-26 CN CN202110988456.3A patent/CN113948607A/zh active Pending
- 2021-09-07 WO PCT/CN2021/116818 patent/WO2023024154A1/fr unknown
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101101936A (zh) * | 2007-07-10 | 2008-01-09 | 中电电气（南京）光伏有限公司 | 选择性发射结晶体硅太阳电池的制备方法 |
| CN101916801A (zh) * | 2010-07-21 | 2010-12-15 | 中山大学 | 一种选择性发射极晶体硅太阳电池的制备工艺 |
| CN201966219U (zh) * | 2010-12-21 | 2011-09-07 | 苏州阿特斯阳光电力科技有限公司 | 一种n型硅太阳能电池 |
| CN107482079A (zh) * | 2016-06-02 | 2017-12-15 | 上海神舟新能源发展有限公司 | 选择性发射结及隧穿氧化高效n型电池制备方法 |
| CN110299422A (zh) * | 2019-06-28 | 2019-10-01 | 天合光能股份有限公司 | 一种激光硼掺杂选择性发射极TOPCon结构电池及其制备方法 |
| CN111162145A (zh) * | 2020-02-26 | 2020-05-15 | 泰州中来光电科技有限公司 | 具有选择性发射极结构的钝化接触太阳能电池及其制备方法 |
| CN112186074A (zh) * | 2020-09-30 | 2021-01-05 | 浙江正泰太阳能科技有限公司 | 一种选择性发射极制备方法、太阳能电池及其制备方法 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112054066A (zh) * | 2019-06-06 | 2020-12-08 | 国家电投集团西安太阳能电力有限公司 | 一种发射极局部高掺杂的ibc电池及其制备方法 |
| CN115732597A (zh) * | 2022-12-01 | 2023-03-03 | 江苏杰太光电技术有限公司 | 一种TOPCon电池选择性发射极和钝化接触结构的制备方法 |
| CN115732597B (zh) * | 2022-12-01 | 2024-03-22 | 江苏杰太光电技术有限公司 | 一种TOPCon电池选择性发射极和钝化接触结构的制备方法 |
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| Publication number | Publication date |
|---|---|
| WO2023024154A1 (fr) | 2023-03-02 |
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