CN113937243B - Preparation method of high PPI quantum dot array based on substrate surface hydrophilic and hydrophobic treatment - Google Patents
Preparation method of high PPI quantum dot array based on substrate surface hydrophilic and hydrophobic treatment Download PDFInfo
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- CN113937243B CN113937243B CN202110984776.1A CN202110984776A CN113937243B CN 113937243 B CN113937243 B CN 113937243B CN 202110984776 A CN202110984776 A CN 202110984776A CN 113937243 B CN113937243 B CN 113937243B
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- 239000000758 substrate Substances 0.000 title claims abstract description 49
- 239000002096 quantum dot Substances 0.000 title claims abstract description 48
- 230000002209 hydrophobic effect Effects 0.000 title claims abstract description 22
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- PYJJCSYBSYXGQQ-UHFFFAOYSA-N trichloro(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl PYJJCSYBSYXGQQ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 15
- 238000005516 engineering process Methods 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 11
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 9
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000004205 dimethyl polysiloxane Substances 0.000 claims abstract description 8
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims abstract description 8
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims abstract description 8
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims abstract description 8
- 238000000059 patterning Methods 0.000 claims abstract description 5
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 12
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 11
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 229920001477 hydrophilic polymer Polymers 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 239000003960 organic solvent Substances 0.000 claims description 4
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 4
- 239000012498 ultrapure water Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 239000003446 ligand Substances 0.000 claims description 3
- 239000004952 Polyamide Substances 0.000 claims description 2
- 229920002125 Sokalan® Polymers 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 229920002401 polyacrylamide Polymers 0.000 claims description 2
- 239000004584 polyacrylic acid Substances 0.000 claims description 2
- 229920002647 polyamide Polymers 0.000 claims description 2
- 229920002635 polyurethane Polymers 0.000 claims description 2
- 239000004814 polyurethane Substances 0.000 claims description 2
- 238000010023 transfer printing Methods 0.000 claims 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract description 5
- 235000011149 sulphuric acid Nutrition 0.000 abstract description 5
- 239000011521 glass Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical class [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The invention relates to a preparation method of a high PPI quantum dot array based on substrate surface hydrophilic and hydrophobic treatment. The substrate is immersed in a solution of H2SO4 and H2O2 of 3:1 (v: v), SO that hydroxyl groups are obtained on the surface of the substrate, and hydrophilicity is increased. And transferring Octadecyl Trichlorosilane (OTS) dissolved in hexane onto a substrate by using a PDMS template containing the array to form a substrate with hydrophilic-hydrophobic patterning, and finally self-assembling the quantum dots on the substrate by using an LB technology to form a high PPI quantum dot array. The method has the advantages of simplicity, strong expansibility and capability of preparing different materials on the same layer.
Description
Technical Field
The invention relates to a preparation method of a high PPI quantum dot array based on substrate surface hydrophilic and hydrophobic treatment.
Background
The quantum dot is focused by a plurality of researchers because of the characteristics of low cost, high energy efficiency and the like, and the quantum dot becomes a popular material of the novel light-emitting diode at present because of the advantages of high color purity, compatible printing process preparation and the like of the quantum dot, so that the quantum dot is one of important research directions in the future display field.
The current display device is rapidly developed, and the quantum dot pixelation is a trend of developing in the current display direction, while the current high PPI device has the problem of high leakage current, so that the efficiency of the device is seriously reduced, and the problem needs to be solved.
Disclosure of Invention
The invention aims to solve the problems of no filling material and high leakage current between points in the existing quantum dot array, and provides a preparation method of a high PPI quantum dot array based on the surface hydrophilic-hydrophobic treatment of a substrate.
In order to achieve the above purpose, the technical scheme of the invention is as follows: a preparation method of a high PPI quantum dot array based on substrate surface hydrophilic and hydrophobic treatment comprises the following steps:
step A, immersing a substrate in a solution of H2SO4 and H2O2 of 3:1 (v: v) for 30 min;
step B, cleaning the substrate by deionized water and methanol in sequence, and drying by nitrogen;
step C, transferring octadecyl trichlorosilane OTS onto a substrate by using a PDMS stamp containing an array to form a substrate with hydrophilic and hydrophobic patterning;
step D, combining the hydrophilic polymer with hydroxyl groups on the substrate by utilizing an LB technology;
and E, depositing hydrophobic quantum dots on the OTS by utilizing an LB technology to form a high PPI quantum dot array.
In an embodiment of the present invention, in the step D, the hydrophilic polymer is one of polyacrylic acid, polyacrylamide, polyvinyl alcohol, polyurethane, and polyamide. But is not limited thereto.
In one embodiment of the present invention, in the step E, the quantum dot material is one of CdS, cdSe, inP, cuS, cuInS, pbSe, csPbBr or a mixture of at least two thereof. But is not limited thereto.
In the high PPI quantum dot array method based on substrate surface hydrophilic and hydrophobic treatment, in the step D, since the LB technology is to self-assemble the material at the water-gas interface and move in the horizontal direction, after film formation is completed, in the transfer process, the hydrophilic polymer has hydrophilicity and spontaneously deposits on hydroxyl groups without OTS to form a network structure.
In the high PPI quantum dot array method based on substrate surface hydrophilic and hydrophobic treatment, in the step E, since the quantum dot ligand has hydrophobicity, spontaneous deposition is carried out on OTS in the transfer process, and an ordered lattice pattern is formed.
Compared with the prior art, the invention has the following beneficial effects: according to the invention, the hydrophilic and hydrophobic patterns are prepared on the substrate, and the hydrophilic material and the quantum dot material are self-assembled on the substrate to form the high PPI quantum dot array, so that the process is simple.
Drawings
FIG. 1 is a schematic diagram of a substrate with patterned hydrophilic-hydrophobic properties in a high PPI quantum dot array method based on a substrate surface hydrophilic-hydrophobic treatment according to a preferred embodiment of the present invention;
FIG. 2 is a flow chart of a method for preparing a high PPI quantum dot array based on a hydrophilic-hydrophobic treatment of a substrate surface according to a preferred embodiment of the present invention.
Detailed Description
The technical scheme of the invention is specifically described below with reference to the accompanying drawings.
The invention discloses a preparation method of a high PPI quantum dot array based on substrate surface hydrophilic and hydrophobic treatment, which comprises the following steps:
step A, immersing a substrate in a solution of H2SO4 and H2O2 of 3:1 (v: v) for 30 min;
step B, cleaning the substrate by deionized water and methanol in sequence, and drying by nitrogen;
step C, transferring octadecyl trichlorosilane OTS onto a substrate by using a PDMS stamp containing an array to form a substrate with hydrophilic and hydrophobic patterning;
step D, combining the hydrophilic polymer with hydroxyl groups on the substrate by utilizing an LB technology;
and E, depositing hydrophobic quantum dots on the OTS by utilizing an LB technology to form a high PPI quantum dot array.
The following is a specific embodiment of the present invention.
In the embodiment, polyethylene glycol is used as a hydrophilic polymer material, and CdSe quantum dots are used as quantum dot materials.
The embodiment provides a high PPI quantum dot array method based on substrate surface hydrophilic and hydrophobic treatment.
Fig. 1 is a schematic diagram of a preferred embodiment of a substrate with patterned hydrophilic-hydrophobic property in a high PPI quantum dot array method based on substrate surface hydrophilic-hydrophobic treatment, and shown in fig. 1, the specific steps are as follows:
A. immersing the substrate in a solution of H2SO4 and H2O2 of 3:1 (v: v) for 30 min;
B. sequentially cleaning the substrate by deionized water and methanol, and drying by nitrogen;
C. octadecyltrichlorosilane (OTS) was transferred onto a substrate using a PDMS stamp containing an array to form a substrate with hydrophilic and hydrophobic patterning.
The invention provides a preparation method of a high PPI quantum dot array based on substrate surface hydrophilic and hydrophobic treatment, which is shown in figure 2 and specifically comprises the following steps:
s1, immersing a glass substrate in a solution of H2SO4 and H2O2 of 3:1 (v: v) for 30 min;
s2, transferring the OTS to the substrate by using a PDMS stamp containing a dot matrix;
s3, depositing polyvinyl alcohol on the hydroxyl by utilizing an LB technology;
s4, depositing quantum dots on the OTS by utilizing an LB technology to form a quantum dot array.
Langmuir-Blodgett (LB) film is a technology that can prepare a dense monolayer film by dispersing molecules at a gas/liquid interface and applying pressure in a horizontal direction so that the molecules are densely arranged at the interface to form a layer of ordered and dense monolayer film.
The invention utilizes LB film technology to self-assemble polyvinyl alcohol and quantum dots, thereby forming a quantum dot array.
Further, in the step S1, hydroxyl groups are introduced into the glass surface to enhance the hydrophilicity of the glass surface.
In step S2, OTS is a hydrophobic material, and is dissolved in hexane, and deposited on the raised pattern of the PDMS stamp by spin coating, LB technique, knife coating, and the like, and transferred onto glass by microcontact transfer to form a hydrophilic-hydrophobic pattern.
In step S3, the polyvinyl alcohol solution is dispersed on the interface of the ultrapure water in a dropwise manner by using a pipette, after the organic solvent volatilizes for 5-60 min, the polyvinyl alcohol is self-assembled on the glass surface by using an LB film drawing machine, and the polyvinyl alcohol is spontaneously deposited on the hydroxyl without OTS due to the hydrophilicity of the polyvinyl alcohol.
In step S4, the quantum dot solution is dispersed on the interface of ultrapure water in a dropwise manner by using a pipette, after the organic solvent volatilizes for 5-60 min, the quantum dots are self-assembled on the glass surface by using an LB film drawing machine, and the ligand of the quantum dots has hydrophobicity and is spontaneously deposited on OTS, so as to form a quantum dot array.
Finally, it should be understood that the above detailed description is only for illustrating the technical solutions of the present invention and not for limiting it, and that modifications and equivalents thereof should be suggested to those skilled in the art, which are included in the scope of the appended claims.
Claims (3)
1. The preparation method of the high PPI quantum dot array based on the substrate surface hydrophilic and hydrophobic treatment is characterized by comprising the following steps of:
step A, immersing the substrate into H 2 SO 4 And H is 2 O 2 The solution with the volume ratio of 3:1 is added for 30 min;
step B, cleaning the substrate by deionized water and methanol in sequence, and drying by nitrogen;
step C, transferring octadecyl trichlorosilane OTS onto a substrate by using a PDMS stamp containing an array to form a substrate with hydrophilic and hydrophobic patterning; OTS is a hydrophobic material, which is dissolved in hexane and deposited on the raised pattern of PDMS stamp, and the OTS is transferred onto the substrate by micro-contact transfer printing method to form hydrophilic-hydrophobic pattern;
step D, combining hydrophilic polymer with hydroxyl on the substrate by utilizing LB technology, specifically: the hydrophilic polymer is polyvinyl alcohol, a polyvinyl alcohol solution is dispersed on the interface of ultrapure water in a dropwise adding mode by a liquid-transferring gun, after an organic solvent volatilizes for 5-60 min, the hydrophilic polyvinyl alcohol is self-assembled on a substrate by an LB film drawing machine, and the polyvinyl alcohol is spontaneously deposited on hydroxyl without OTS;
step E, depositing hydrophobic quantum dots on OTS by utilizing LB technology to form a high PPI quantum dot array, specifically: dispersing the quantum dot solution on the interface of ultrapure water in a dropwise adding mode by using a liquid-transferring gun, after the organic solvent volatilizes for 5-60 min, self-assembling the quantum dots on a substrate by using an LB film drawing machine, and spontaneously depositing the ligand of the quantum dots with hydrophobicity on OTS to form a high PPI quantum dot array.
2. The method for preparing a high PPI quantum dot array based on substrate surface hydrophilic-hydrophobic treatment according to claim 1, wherein in step D, the hydrophilic polymer is one of polyacrylic acid, polyacrylamide, polyurethane, and polyamide.
3. The method of claim 1, wherein in step E, the hydrophobic quantum dot material is CdS, cdSe, inP, cuS, cuInS, pbSe, csPbBr 3 One or a mixture of at least two thereof.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110984776.1A CN113937243B (en) | 2021-08-26 | 2021-08-26 | Preparation method of high PPI quantum dot array based on substrate surface hydrophilic and hydrophobic treatment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110984776.1A CN113937243B (en) | 2021-08-26 | 2021-08-26 | Preparation method of high PPI quantum dot array based on substrate surface hydrophilic and hydrophobic treatment |
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| Publication Number | Publication Date |
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| CN113937243A CN113937243A (en) | 2022-01-14 |
| CN113937243B true CN113937243B (en) | 2024-01-30 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104030238A (en) * | 2014-06-12 | 2014-09-10 | 西安交通大学 | Preparation method for realizing graphical ZnO nanowire arrays by micro-contact printing |
| CN104176944A (en) * | 2014-09-05 | 2014-12-03 | 北京航空航天大学 | Method for modifying OTS self-assembled film on glass substrate |
| CN106129083A (en) * | 2016-06-30 | 2016-11-16 | 纳晶科技股份有限公司 | A kind of quantum dot printing transferring method |
| CN106784186A (en) * | 2016-12-23 | 2017-05-31 | Tcl集团股份有限公司 | A kind of LB quantum dot films, light emitting diode and preparation method |
| CN108269656A (en) * | 2016-12-30 | 2018-07-10 | 深圳光启空间技术有限公司 | Meta Materials manufacturing method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8193010B2 (en) * | 2009-06-29 | 2012-06-05 | Board Of Regents, The University Of Texas System | Uniform transfer of luminescent quantum dots onto a substrate |
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- 2021-08-26 CN CN202110984776.1A patent/CN113937243B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104030238A (en) * | 2014-06-12 | 2014-09-10 | 西安交通大学 | Preparation method for realizing graphical ZnO nanowire arrays by micro-contact printing |
| CN104176944A (en) * | 2014-09-05 | 2014-12-03 | 北京航空航天大学 | Method for modifying OTS self-assembled film on glass substrate |
| CN106129083A (en) * | 2016-06-30 | 2016-11-16 | 纳晶科技股份有限公司 | A kind of quantum dot printing transferring method |
| CN106784186A (en) * | 2016-12-23 | 2017-05-31 | Tcl集团股份有限公司 | A kind of LB quantum dot films, light emitting diode and preparation method |
| CN108269656A (en) * | 2016-12-30 | 2018-07-10 | 深圳光启空间技术有限公司 | Meta Materials manufacturing method |
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| CN113937243A (en) | 2022-01-14 |
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