CN112635687B - Nano quantum dot light-emitting diode based on self-assembled submicron spheres and method - Google Patents

Nano quantum dot light-emitting diode based on self-assembled submicron spheres and method Download PDF

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CN112635687B
CN112635687B CN202110028704.XA CN202110028704A CN112635687B CN 112635687 B CN112635687 B CN 112635687B CN 202110028704 A CN202110028704 A CN 202110028704A CN 112635687 B CN112635687 B CN 112635687B
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quantum dot
layer
dot light
emitting diode
self
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CN112635687A (en
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李福山
赵等临
胡海龙
郭太良
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Fuzhou University
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Fuzhou University
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/04—Networks or arrays of similar microstructural devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Abstract

The invention relates to a self-assembled submicron sphere-based nanometer quantum dot light-emitting diode and a method, which comprises a substrate, an anode layer, an insulating layer pixel Bank array, a hole injection layer, a hole transmission layer, a quantum dot light-emitting layer, an electron transmission layer and a cathode layer which are sequentially arranged from bottom to top. The invention relates to a self-assembled submicron sphere-based nanometer quantum dot light-emitting diode, which solves the problems that the existing quantum dot light-emitting diode is not small enough and not dense enough.

Description

Nano quantum dot light-emitting diode based on self-assembled submicron spheres and method
Technical Field
The invention relates to the field of quantum dot light-emitting diode preparation, in particular to a nano quantum dot light-emitting diode based on self-assembled submicron spheres and a method.
Background
The quantum dots are concerned by many researchers due to the characteristics of low cost, high energy efficiency and the like, and in addition, the quantum dots become hot materials of the current novel light emitting diode due to the advantages of high color purity, compatibility with printing process preparation and the like, so that the quantum dots are one of important research directions in the future display field.
Nowadays, the display device with high PPI is rapidly developed, and the higher PPI value means that the display screen can display images with higher density, the image quality performance is more excellent, and a firm foundation is laid for 3D display. However, in order to obtain a higher PPI, it is necessary to have pixels as small and dense as possible, and this problem needs to be solved urgently.
Disclosure of Invention
In view of the above, the present invention provides a self-assembled submicron bead-based nano quantum dot light emitting diode and a method thereof, which solve the problems of insufficient size and insufficient density of the conventional quantum dot light emitting diode.
In order to achieve the purpose, the invention adopts the following technical scheme:
a nanometer quantum dot light-emitting diode based on self-assembly submicron spheres comprises a substrate, an anode layer, an insulating layer pixel Bank array, a hole injection layer, a hole transmission layer, a quantum dot light-emitting layer, an electron transmission layer and a cathode layer which are sequentially arranged from bottom to top.
Further, the anode layer is made of ITO or IZO.
Further, the insulating layer pixel Bank array adopts materials including, but not limited to, polymers or metal oxides, the polymers include, but not limited to, one of polyvinylpyrrolidone and polymethyl methacrylate, and the metal oxides include, but not limited to, silicon dioxide and aluminum oxide.
Furthermore, the hole injection layer adopts materials of PEDOT, PSS and MoO3、WO3One or more of; the hole transport layer is made of one or more of PVK, Poly-TPD, TFB, CPB and perovskite.
Furthermore, the quantum dot film is made of CdS, CdSe, InP, CuInS or PbSe.
Furthermore, the electron transport layer is made of ZnO and TiO2、SnO2One or more of LiZnO and MgZnO.
A preparation method of a nanometer quantum dot light-emitting diode based on self-assembled submicron spheres comprises the following steps:
t1, depositing the compact PS pellets on the anode by using an LB film drawing machine;
t2, preparing an insulating layer;
t3, removing the PS beads and leaving a dense nanoscale pixel Bank array;
t4, spin-coating a hole injection layer on the insulating layer, and then curing and molding;
t5, spin-coating a hole transport layer on the hole injection layer, and then curing and molding;
t6, spin-coating a quantum dot film on the hole transport layer, and then curing and forming;
t7, spin-coating an electron transport layer on the quantum dot film, and then curing and forming;
and T8, evaporating a cathode layer on the electron transmission layer to obtain the nanometer quantum dot light-emitting diode array.
Further, the preparation of the nanoscale pixel Bank array specifically comprises the following steps:
s1, dispersing the PS beads in a nonpolar solvent to form a quantum dot solution;
s2, dripping the PS pellet solution on ultrapure water to disperse the PS pellets on a liquid/gas interface, volatilizing the organic solvent, extruding by an LB film drawing machine, and obtaining a densely arranged PS pellet array on the anode by using a liquid level descent method;
s3, depositing an insulating layer on the PS bead array;
and S4, removing the PS beads to obtain the nano dense pixel Bank array.
Further, the step S2 is to prepare a densely arranged PS bead array by using LB membrane technology.
Further, the insulating layer is made of insulating metal oxide or polymer.
Compared with the prior art, the invention has the following beneficial effects:
the invention utilizes the self-assembly submicron spheres to prepare the nanoscale pixel Bank array, and further prepares the nanoscale quantum dot light-emitting diode array on the substrate, has simple preparation method and high PPI, and effectively solves the problems that the existing quantum dot light-emitting diode is not small enough and not dense enough.
Drawings
FIG. 1 is a flow chart of a method for preparing a nano-pixel Bank according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a method for preparing a nano-pixel Bank according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a light emitting diode structure according to the present invention;
FIG. 4 is a flow chart of a method for manufacturing a light emitting diode according to the present invention.
Detailed Description
The invention is further explained below with reference to the drawings and the embodiments.
Referring to fig. 3, the present invention provides a self-assembled submicron sphere-based nano quantum dot light emitting diode, which comprises a substrate, an anode layer, an insulating layer pixel Bank array, a hole injection layer, a hole transport layer, a quantum dot light emitting layer, an electron transport layer, and a cathode layer, which are sequentially disposed from bottom to top.
In this embodiment, ITO or IZO is used for the anode layer.
In the present embodiment, the insulating layer pixel Bank array uses a material including, but not limited to, a polymer including, but not limited to, one of polyvinylpyrrolidone and polymethylmethacrylate, or a metal oxide including, but not limited to, silicon dioxide and aluminum oxide.
In this embodiment, the hole injection layer is made of PEDOT (PSS, MoO)3、WO3One or more of; the hole transport layer is made of one or more of PVK, Poly-TPD, TFB, CPB and perovskite.
In this embodiment, the material used for the quantum dot thin film is CdS, CdSe, InP, CuInS, or PbSe.
In this embodiment, the electron transport layer is made of ZnO or TiO2、SnO2One or more of LiZnO and MgZnO.
In this embodiment, the cathode layer is made of one or more of Al, Ag, and Cu, or a conductive polymer.
Referring to fig. 4, in this embodiment, a method for preparing a nano quantum dot light emitting diode based on self-assembled submicron spheres is further provided, including the following steps:
t1, depositing PS pellets on the anode substrate below the liquid level by using a liquid level descending method, and drying the substrate at 100 ℃;
t2, depositing insulating metal oxide on the substrate containing the PS pellets by using vacuum sputtering;
t3, 30 min at 300 ℃ to remove PS globules, leaving behind a dense nanoscale pixel Bank array;
t4, depositing a hole injection layer on the insulating layer in a spin coating mode, and then annealing at 120 ℃ to be cured and molded;
t5, depositing a hole transport layer on the hole injection layer in a spin coating mode, and then annealing at 120 ℃ to be cured and molded;
t6, depositing the quantum dot film on the hole transport layer in a spin coating mode, and then annealing at 80 ℃ to be cured and molded;
t7, depositing the electron transport layer on the quantum dot film in a spin coating mode, and then annealing at 80 ℃ to be cured and molded;
and T8, evaporating a cathode layer on the electron transmission layer to obtain the nanometer quantum dot light-emitting diode array.
Referring to fig. 1, the nanoscale pixel Bank array is prepared as follows:
s1, dispersing the PS beads in a nonpolar solvent to form a quantum dot solution;
s2, dripping the PS pellet solution on ultrapure water to disperse the PS pellets on a liquid/gas interface, volatilizing the organic solvent for 5-60 min, extruding by an LB film drawing machine, and obtaining a densely arranged PS pellet array on the anode by using a liquid level descent method;
s3, depositing a layer of insulating oxide or polymer on the PS bead array;
and S4, removing the PS beads for 5-60 min at the temperature of 300 ℃ to obtain the nano dense pixel Bank array.
Preferably, in this embodiment, a densely arranged PS bead array is prepared by using LB film technology, and the PS bead array is used for the subsequent preparation of a nano-pixel Bank array.
The above description is only a preferred embodiment of the present invention, and all equivalent changes and modifications made in accordance with the claims of the present invention should be covered by the present invention.

Claims (8)

1. A nanometer quantum dot light-emitting diode based on self-assembly submicron spheres is characterized by comprising a substrate, an anode layer, an insulating layer pixel Bank array, a hole injection layer, a hole transmission layer, a quantum dot light-emitting layer, an electron transmission layer and a cathode layer which are sequentially arranged from bottom to top; the preparation of the insulating layer pixel Bank array is as follows:
s1, dispersing the PS beads in a nonpolar solvent to form a quantum dot solution;
s2, dripping the PS pellet solution on ultrapure water to disperse the PS pellets on a liquid/gas interface, volatilizing the organic solvent, extruding by an LB film drawing machine, and obtaining a densely arranged PS pellet array on the anode by using a liquid level descent method;
s3, depositing an insulating layer on the PS bead array;
and S4, removing the PS beads to obtain the nano dense pixel Bank array.
2. The self-assembled submicron sphere based nanometer quantum dot light emitting diode of claim 1, wherein the anode layer is ITO or IZO.
3. The self-assembled submicron sphere based nanometer quantum dot light emitting diode of claim 1, wherein the material adopted by the pixel Bank array of the insulating layer comprises polymer or metal oxide, the polymer comprises one of polyvinylpyrrolidone and polymethyl methacrylate, and the metal oxide comprises silicon dioxide or aluminum oxide.
4. The self-assembled submicron sphere based nanometer quantum dot light emitting diode according to claim 1, wherein the hole injection layer is made of PEDOT PSS or MoO3、WO3One or more of; the hole transport layer is made of one or more of PVK, Poly-TPD, TFB, CPB and perovskite.
5. The self-assembled submicron sphere based nanometer quantum dot light emitting diode of claim 1, wherein the quantum dot thin film is made of CdS, CdSe, InP, CuInS or PbSe.
6. The self-assembled submicron sphere based nanometer quantum dot light emission of claim 1The diode is characterized in that the electron transmission layer is made of ZnO or TiO2、SnO2One or more of LiZnO and MgZnO.
7. The self-assembled submicron sphere based nanometer quantum dot light emitting diode of claim 1, wherein the insulating layer is made of insulating metal oxide or polymer.
8. The method for preparing the nanometer quantum dot light-emitting diode based on the self-assembled submicron spheres as claimed in claim 1, characterized by comprising the following steps:
t1, depositing the compact PS pellets on the anode by using an LB film drawing machine;
t2, preparing an insulating layer;
t3, removing the PS beads and leaving a dense nanoscale pixel Bank array;
t4, spin-coating a hole injection layer on the insulating layer, and then curing and molding;
t5, spin-coating a hole transport layer on the hole injection layer, and then curing and molding;
t6, spin-coating a quantum dot film on the hole transport layer, and then curing and forming;
t7, spin-coating an electron transport layer on the quantum dot film, and then curing and forming;
and T8, evaporating a cathode layer on the electron transmission layer to obtain the nanometer quantum dot light-emitting diode array.
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JP2010251650A (en) * 2009-04-20 2010-11-04 Hitachi Maxell Ltd Electroluminescence element
CN111384287A (en) * 2018-12-29 2020-07-07 Tcl集团股份有限公司 Quantum dot light-emitting diode and preparation method thereof

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CN102486967B (en) * 2010-12-06 2016-03-23 长沙理工大学 The preparation method of complex ordered stephanoporate nano-titanium dioxide film
CN103529081B (en) * 2013-10-21 2016-02-03 苏州慧闻纳米科技有限公司 A kind of preparation method of multiple layer metal oxide porous membrane gas-sensitive nano material
KR20180094057A (en) * 2015-12-31 2018-08-22 사빅 글로벌 테크놀러지스 비.브이. Multifunctional hierarchical nano and microlenses to improve extraction efficiency of OLED lighting
CN106784369A (en) * 2016-12-23 2017-05-31 Tcl集团股份有限公司 A kind of array structure light emitting diode with quantum dots device and preparation method thereof
CN108516698B (en) * 2018-07-06 2021-03-16 苏州新吴光电科技有限公司 Silicon dioxide film and preparation method thereof

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