CN113937243A - Preparation method of high PPI quantum dot array based on hydrophilic and hydrophobic treatment of substrate surface - Google Patents
Preparation method of high PPI quantum dot array based on hydrophilic and hydrophobic treatment of substrate surface Download PDFInfo
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- CN113937243A CN113937243A CN202110984776.1A CN202110984776A CN113937243A CN 113937243 A CN113937243 A CN 113937243A CN 202110984776 A CN202110984776 A CN 202110984776A CN 113937243 A CN113937243 A CN 113937243A
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- high ppi
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- 239000000758 substrate Substances 0.000 title claims abstract description 45
- 239000002096 quantum dot Substances 0.000 title claims abstract description 43
- 230000002209 hydrophobic effect Effects 0.000 title claims abstract description 19
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- PYJJCSYBSYXGQQ-UHFFFAOYSA-N trichloro(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl PYJJCSYBSYXGQQ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 14
- 238000005516 engineering process Methods 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 10
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 8
- 239000004205 dimethyl polysiloxane Substances 0.000 claims abstract description 7
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims abstract description 7
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims abstract description 7
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims abstract description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 7
- 229920001477 hydrophilic polymer Polymers 0.000 claims description 7
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 235000011149 sulphuric acid Nutrition 0.000 claims description 5
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 claims description 3
- -1 CuInS Chemical compound 0.000 claims description 3
- 239000004952 Polyamide Substances 0.000 claims description 2
- 229920002125 Sokalan® Polymers 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 229920002401 polyacrylamide Polymers 0.000 claims description 2
- 239000004584 polyacrylic acid Substances 0.000 claims description 2
- 229920002647 polyamide Polymers 0.000 claims description 2
- 229920002635 polyurethane Polymers 0.000 claims description 2
- 239000004814 polyurethane Substances 0.000 claims description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 abstract description 6
- 239000011521 glass Substances 0.000 description 6
- 239000003446 ligand Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Application Of Or Painting With Fluid Materials (AREA)
Abstract
The invention relates to a preparation method of a high PPI quantum dot array based on hydrophilic and hydrophobic treatment of a substrate surface. The substrate is immersed in a solution of H2SO 4H 2O2 of 3:1(v: v) to obtain hydroxyl groups on the surface of the substrate and increase the hydrophilicity. And then transferring Octadecyl Trichlorosilane (OTS) dissolved in hexane onto the substrate by using a PDMS template containing an array to form a patterned substrate with hydrophilicity and hydrophobicity, and finally self-assembling the quantum dots on the substrate by using an LB technology to form the high PPI quantum dot array. The method has the advantages of simple method and strong expansibility, and different materials can be prepared on the same layer.
Description
Technical Field
The invention relates to a preparation method of a high PPI quantum dot array based on hydrophilic and hydrophobic treatment of a substrate surface.
Background
The quantum dots are concerned by many researchers due to the characteristics of low cost, high energy efficiency and the like, and in addition, the quantum dots become hot materials of the current novel light emitting diode due to the advantages of high color purity, compatibility with printing process preparation and the like, so that the quantum dots are one of important research directions in the future display field.
The current display device is rapidly developed, the quantum dot pixelation is a trend of current display direction development, and the current high-PPI device has a high leakage current problem, which seriously reduces the efficiency of the device, and the problem needs to be solved urgently.
Disclosure of Invention
The invention aims to solve the problems of no filling material between dots in the existing quantum dot array and high leakage current, and provides a preparation method of a high PPI quantum dot array based on hydrophilic and hydrophobic treatment of the surface of a substrate.
In order to achieve the purpose, the technical scheme of the invention is as follows: a preparation method of a high PPI quantum dot array based on hydrophilic and hydrophobic treatment of a substrate surface comprises the following steps:
step A, immersing the substrate in a solution of H2SO4 and H2O2 in a ratio of 3:1(v: v) for 30 min;
b, cleaning the substrate by deionized water and methanol in sequence, and drying by nitrogen;
c, transferring the octadecyl trichlorosilane OTS to a substrate by using a PDMS stamp containing an array to form a patterned substrate with hydrophilic and hydrophobic properties;
step D, combining the hydrophilic polymer with the hydroxyl on the substrate by utilizing an LB technology;
and E, depositing the hydrophobic quantum dots on the OTS by utilizing an LB technology to form the high PPI quantum dot array.
In an embodiment of the present invention, in step D, the hydrophilic polymer is one of polyacrylic acid, polyacrylamide, polyvinyl alcohol, polyurethane, and polyamide. And may not be limited thereto.
In an embodiment of the present invention, in step E, the quantum dot material is one of CdS, CdSe, InP, CuS, CuInS, PbSe, CsPbBr3, or a mixture of at least two of them. And may not be limited thereto.
In the step D, because the LB technology is to self-assemble the material at the water-gas interface and can move in the horizontal direction, after the film is formed, the hydrophilic polymer is hydrophilic and is spontaneously deposited on the hydroxyl without OTS to form a network structure in the transfer process.
In the step E, due to the hydrophobicity of the quantum dot ligand, the quantum dot ligand is spontaneously deposited on the OTS during the transfer process to form an ordered lattice pattern.
Compared with the prior art, the invention has the following beneficial effects: according to the invention, the hydrophilic and hydrophobic patterns are prepared on the substrate, and the hydrophilic material and the quantum dot material are self-assembled on the substrate to form the high PPI quantum dot array, so that the process is simple.
Drawings
FIG. 1 is a schematic diagram of a substrate with patterned hydrophilicity and hydrophobicity in a high PPI quantum dot array method based on hydrophilicity and hydrophobicity treatment of the substrate surface according to a preferred embodiment of the present invention;
fig. 2 is a flowchart illustrating a method for preparing a high PPI quantum dot array based on hydrophilic-hydrophobic treatment of a substrate surface according to a preferred embodiment of the present invention.
Detailed Description
The technical scheme of the invention is specifically explained below with reference to the accompanying drawings.
The invention relates to a preparation method of a high PPI quantum dot array based on hydrophilic and hydrophobic treatment of a substrate surface, which comprises the following steps:
step A, immersing the substrate in a solution of H2SO4 and H2O2 in a ratio of 3:1(v: v) for 30 min;
b, cleaning the substrate by deionized water and methanol in sequence, and drying by nitrogen;
c, transferring the octadecyl trichlorosilane OTS to a substrate by using a PDMS stamp containing an array to form a patterned substrate with hydrophilic and hydrophobic properties;
step D, combining the hydrophilic polymer with the hydroxyl on the substrate by utilizing an LB technology;
and E, depositing the hydrophobic quantum dots on the OTS by utilizing an LB technology to form the high PPI quantum dot array.
The following are specific embodiments of the present invention.
In the embodiment, polyethylene glycol is used as a hydrophilic polymer material, and CdSe quantum dots are used as quantum dot materials.
The embodiment provides a high PPI quantum dot array method based on hydrophilic and hydrophobic treatment of a substrate surface.
Fig. 1 is a schematic diagram of a substrate with patterned hydrophilicity and hydrophobicity in a high PPI quantum dot array method based on hydrophilicity and hydrophobicity treatment of a substrate surface, as shown in fig. 1, the specific steps are as follows:
A. immersing the substrate in a solution of H2SO4 and H2O2 in a ratio of 3:1(v: v) for 30 min;
B. cleaning the substrate by deionized water and methanol in sequence, and drying by nitrogen;
C. transferring Octadecyltrichlorosilane (OTS) onto a substrate by using a PDMS stamp containing an array to form a patterned substrate with hydrophilic and hydrophobic properties.
The invention provides a preparation method of a high PPI quantum dot array based on substrate surface hydrophilic and hydrophobic treatment, as shown in FIG. 2, the preparation method specifically comprises the following steps:
s1, immersing the glass substrate in a solution of H2SO4 and H2O2 in a ratio of 3:1(v: v) for 30 min;
s2, transferring the OTS to the substrate by using the PDMS stamp containing the dot matrix;
s3, depositing polyvinyl alcohol on hydroxyl by utilizing an LB technology;
and S4, depositing the quantum dots on the OTS by utilizing an LB technology to form a quantum dot array.
Langmuir-Blodgett (LB film) is a technique that can produce dense monolayer films by dispersing molecules at the gas/liquid interface and applying pressure in the horizontal direction to densely arrange the molecules at the interface to form an orderly and dense monolayer film.
The invention utilizes LB film technology to self-assemble polyvinyl alcohol and quantum dots, thereby forming a quantum dot array.
Further, in step S1, hydroxyl groups are introduced to the glass surface to enhance the hydrophilicity of the glass surface.
Further, in step S2, the OTS is a hydrophobic material, and is dissolved in hexane, deposited on the raised pattern of the PDMS stamp by spin coating, LB technique, blade coating, etc., and transferred onto the glass by micro-contact transfer printing, so as to form a hydrophilic-hydrophobic pattern.
Further, in the step S3, the polyvinyl alcohol solution is dispersed on the interface of the ultrapure water by a pipetting gun in a dropwise manner, and after the organic solvent is volatilized for 5-60 min, the polyvinyl alcohol is self-assembled on the glass surface by an LB film drawing machine, and is spontaneously deposited on the OTS-free hydroxyl group due to the hydrophilicity of the polyvinyl alcohol.
Further, in the step S4, the quantum dot solution is dispersed on the interface of the ultrapure water by a liquid-transferring gun in a dropwise manner, after the organic solvent is volatilized for 5-60 min, the quantum dot is self-assembled on the glass surface by an LB film draw film machine, and the ligand of the quantum dot has hydrophobicity, and is spontaneously deposited on the OTS, thereby forming the quantum dot array.
Finally, it should be understood that the above detailed description is only for illustrating the technical solutions of the present invention and not for limiting, and it should be understood that modifications or equivalent substitutions for the technical solutions of the present invention by those of ordinary skill in the art should be included within the scope of the claims of the present invention.
Claims (3)
1. A preparation method of a high PPI quantum dot array based on hydrophilic and hydrophobic treatment of a substrate surface is characterized by comprising the following steps:
step A, immersing the substrate in a solution of H2SO4 and H2O2 in a ratio of 3:1(v: v) for 30 min;
b, cleaning the substrate by deionized water and methanol in sequence, and drying by nitrogen;
c, transferring the octadecyl trichlorosilane OTS to a substrate by using a PDMS stamp containing an array to form a patterned substrate with hydrophilic and hydrophobic properties;
step D, combining the hydrophilic polymer with the hydroxyl on the substrate by utilizing an LB technology;
and E, depositing the hydrophobic quantum dots on the OTS by utilizing an LB technology to form the high PPI quantum dot array.
2. The method for preparing a high PPI quantum dot array based on hydrophilic-hydrophobic treatment of substrate surface according to claim 1, wherein in step D, the hydrophilic polymer is one of polyacrylic acid, polyacrylamide, polyvinyl alcohol, polyurethane, and polyamide.
3. The method for preparing a high PPI quantum dot array based on hydrophilic-hydrophobic treatment of substrate surface according to claim 1, wherein in step E, the quantum dot material is one of CdS, CdSe, InP, CuS, CuInS, PbSe, CsPbBr3 or a mixture of at least two of CdS, CdSe, InP, CuS, CuInS, PbSe, CsPbBr 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110984776.1A CN113937243B (en) | 2021-08-26 | 2021-08-26 | Preparation method of high PPI quantum dot array based on substrate surface hydrophilic and hydrophobic treatment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110984776.1A CN113937243B (en) | 2021-08-26 | 2021-08-26 | Preparation method of high PPI quantum dot array based on substrate surface hydrophilic and hydrophobic treatment |
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| Publication Number | Publication Date |
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| CN113937243A true CN113937243A (en) | 2022-01-14 |
| CN113937243B CN113937243B (en) | 2024-01-30 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100330715A1 (en) * | 2009-06-29 | 2010-12-30 | Ashwini Gopal | Uniform Transfer of Luminescent Quantum Dots onto a Substrate |
| CN104030238A (en) * | 2014-06-12 | 2014-09-10 | 西安交通大学 | Preparation method for realizing graphical ZnO nanowire arrays by micro-contact printing |
| CN104176944A (en) * | 2014-09-05 | 2014-12-03 | 北京航空航天大学 | Method for modifying OTS self-assembled film on glass substrate |
| CN106129083A (en) * | 2016-06-30 | 2016-11-16 | 纳晶科技股份有限公司 | A kind of quantum dot printing transferring method |
| CN106784186A (en) * | 2016-12-23 | 2017-05-31 | Tcl集团股份有限公司 | A kind of LB quantum dot films, light emitting diode and preparation method |
| CN108269656A (en) * | 2016-12-30 | 2018-07-10 | 深圳光启空间技术有限公司 | Meta Materials manufacturing method |
-
2021
- 2021-08-26 CN CN202110984776.1A patent/CN113937243B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100330715A1 (en) * | 2009-06-29 | 2010-12-30 | Ashwini Gopal | Uniform Transfer of Luminescent Quantum Dots onto a Substrate |
| CN104030238A (en) * | 2014-06-12 | 2014-09-10 | 西安交通大学 | Preparation method for realizing graphical ZnO nanowire arrays by micro-contact printing |
| CN104176944A (en) * | 2014-09-05 | 2014-12-03 | 北京航空航天大学 | Method for modifying OTS self-assembled film on glass substrate |
| CN106129083A (en) * | 2016-06-30 | 2016-11-16 | 纳晶科技股份有限公司 | A kind of quantum dot printing transferring method |
| CN106784186A (en) * | 2016-12-23 | 2017-05-31 | Tcl集团股份有限公司 | A kind of LB quantum dot films, light emitting diode and preparation method |
| CN108269656A (en) * | 2016-12-30 | 2018-07-10 | 深圳光启空间技术有限公司 | Meta Materials manufacturing method |
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