KR101064380B1 - Transition apparatus for the nano wire pattern - Google Patents

Abstract

Disclosed are a nanowire pattern transfer method using a sliding transition method and a nanowire pattern transfer device therefor.

Nanowire pattern transfer method according to the invention comprises the steps of (a) forming a PMMA pattern on the first substrate; (b) forming nanowires on the second substrate; And (c) fixing one of the first and second substrates and sliding the other substrate to transfer the nanowires formed on the second substrate onto the PMMA pattern of the first substrate. It is done by

On the other hand, the sliding transition apparatus according to the present invention comprises a housing having a structure in which the upper plate and the lower plate is connected to a plurality of supports in the vertical direction; A height adjusting part formed through the upper plate and adjusting a distance between the first substrate and the second substrate; An upper holder formed below the height adjusting part and fixed to the second substrate; A sliding stage unit formed on the lower plate and moving in xy coordinates; A lower holder formed on the sliding stage and fixed to the first substrate; And a control unit for controlling the movement of the sliding stage unit.

Description

Nanowire pattern transfer device {TRANSITION APPARATUS FOR THE NANO WIRE PATTERN}

The present invention relates to a nanowire pattern transfer method having a diameter of several nanometers and a nanowire pattern transfer device therefor, using a Langmuir-Schaffer method and a microcontact printing method. The present invention relates to a method for transferring a formed nanowire to a substrate for manufacturing a semiconductor device through a sliding transition method, and a nanowire pattern transfer device therefor.

In manufacturing a semiconductor device made of nanowires, that is, a nanowire device, arranging the nanowire at a desired position and controlling the direction may be an essential task for the integration and performance improvement of the nanowire device. . In addition, compared to the device characteristics that can be realized in a single nanowire in a device of the same size, the nanowire devices arranged in one direction show better device characteristics.

Conventional nanowire transfer technology produces a single nanowire through an electron beam lithography process, or makes a nanowire in solution so that it can be sprayed onto a photolithography pattern or an electron beam lithography pattern, or adsorbed as a network through surface treatment. The method was used.

However, these conventional methods require a photolithography process or an electron beam lithography process, which is time-consuming and expensive. In addition, conventional methods have limitations in aligning nanowires in one direction and making nanowire patterns having a uniform density.

Meanwhile, the nanowires formed before the nanowires were transferred through a method of depositing a catalytic metal such as gold (Au) in a high vacuum using an expensive deposition apparatus, and patterning the grown nanowires. Patterning was performed using Sea Mask Aligner equipment.

However, this method requires a short time to grow the nanowires in the deposition equipment, and also has the inconvenience of separately patterning the grown nanowires.

In order to solve this problem, studies have been conducted to raise and pattern catalyst particles on a substrate through chemical bonding or van der Waals forces in a solution without using a deposited thin metal film, but this method is basically a dry process. process) It has several disadvantages in terms of solvent use rather than process.

In addition, a method of depositing and patterning a thin metal film on a pre-patterned polymer stamp has been suggested. However, in order to deposit a metal film on the polymer stamp, the use of a deposition apparatus is inevitable, and a process time is required. There is a long problem.

Disclosure of Invention An object of the present invention is to provide a method for transferring nanowires formed using a Langmuir-Schaffer method and a microcontact printing method to a substrate for manufacturing a semiconductor device through a sliding transition method, thereby providing nanowire transition. The aim is to simplify the process and reduce costs.

Another object of the present invention is to transfer the grown nanowires on the substrate for semiconductor device manufacturing at a uniform force and speed, to create a nanowire pattern and determine the directionality, so that the nanowire density is constant in a certain direction in the pattern The present invention provides a nanowire pattern transfer device that can implement an arrayed nanowire device.

According to an aspect of the present invention, there is provided a method of transferring a nanowire pattern, the method including: (a) forming a PMMA pattern on a first substrate; (b) forming nanowires on the second substrate; And (c) fixing one of the first and second substrates and sliding the other substrate to transfer the nanowires formed on the second substrate onto the PMMA pattern of the first substrate. Characterized in that.

In this case, the nanowires formed on the second substrate may be formed using a Langmuir-Schaffer method and a microcontact printing method.

Nanowire pattern transition apparatus according to an embodiment of the present invention for achieving the another object of the housing having a structure in which the upper plate and the lower plate is connected to a plurality of supports in the vertical direction; A height adjusting unit formed through the upper plate and adjusting a distance between the first substrate on which the nanowires are formed and the second substrate transferring the nanowires; An upper holder formed below the height adjusting part and fixing one of the first and second substrates; A sliding stage unit formed on the lower plate and moving on an x-y axis; A lower holder formed on the sliding stage part and to which the other of the first substrate and the second substrate is fixed; And a control unit for controlling the movement of the sliding stage unit.

In this case, a guide is formed on one side of the upper holder in a vertical direction to prevent shaking of the upper holder, and the upper holder and the lower holder are connected to a vacuum pump to fix the first substrate and the second substrate. Can be.

The nanowire pattern transfer method according to the present invention uses a nanowire pattern formed by using a Langmuir-Schaffer method and a microcontact printing method, which is one of soft lithography methods, not conventional photo or electron beam lithography methods. In addition, the process can be simplified and the cost can be reduced.

In addition, the nanowire device manufactured by the nanowire pattern transfer method according to the present invention uses a nanowire pattern transfer device that moves on xy coordinates, such as the arrangement, electrical characteristics, device arrangement, etc. of the nanowire device in a network form. In terms of characteristics, it can show excellent characteristics.

In addition, the nanowire pattern transfer device according to the present invention can implement a nanowire device in a uniform form, and has excellent in terms of reproducibility of the nanowire device by transferring the nanowire with a constant force and speed, depending on the polymer pattern Other types of circuits can also be fabricated, with the advantage of producing heterogeneous nanowires of the same quality.

Advantages and features of the present invention and methods for achieving them will be apparent with reference to the embodiments described below in detail with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various different forms, and only the embodiments make the disclosure of the present invention complete, and those skilled in the art to which the present invention pertains. It is provided to fully inform the person having the scope of the invention, which is defined only by the scope of the claims. Like reference numerals refer to like elements throughout.

Hereinafter, a nanowire pattern transfer method and a nanowire pattern transfer device therefor according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

Figure 1 schematically shows a nanowire pattern transfer method according to an embodiment of the present invention.

Referring to Figure 1, the nanowire pattern transfer method according to the present invention is as follows.

First, the second substrate 120 transferring the nanowires is brought into contact with the first substrate 110 on which the nanowires are formed. Thereafter, the first substrate 110 on which the nanowires are formed or the second substrate 120 transferring the nanowires is slid to transfer the nanowires in the sliding direction. In this case, the first substrate 110 may be a substrate for manufacturing a semiconductor device such as a SiO ₂ / Si substrate.

In the present invention, a poly methy methacrylate (PMMA) pattern is formed on the first substrate 110. The PMMA pattern may be used as a framework for nanowire transition, and may be used as a substrate for nanowire patterns, which is an application of PMMA film patterns. Can be used.

The PMMA pattern can be produced by simply applying a PMMA in a molten state on the first substrate 110, and then performing a hot embossing method using a metal or a polymer stamp having a pattern formed on the surface thereof, thereby easily manufacturing various patterns. The thickness of the pattern may be about 10-50 nm.

In addition, the first substrate is formed of a self assembly monolayer (APS) of 3-aminoprophyltrimethoxyslane (APS). The self-assembled monolayer is to prevent the loss of the nanowires transferred in the manufacturing process of the electrode.

The nanowires formed on the second substrate 120 may be formed using a Langmuir-Schaffer method and a microcontact printing method as shown in FIGS. 2 to 4.

2 schematically shows an example of a method for forming a nanowire of a second substrate, wherein the nanoparticle monolayer film forming step (S210), nanoparticle adsorption step (S220), nanoparticle printing step (S230), and nanowire growth step It includes (S240).

In the nanoparticle monolayer film forming step (S210), a nanoparticle monolayer is formed by a Langmuir-Schaffer method.

The Langer-Schaefer method is a monomolecular film formation method using a dispersion in which nanoparticles are dispersed. Specifically, a nanoparticle dispersion solution in which nanoparticles are dispersed in a first solvent is prepared and is not mixed with the first solvent. Pouring the nanoparticle dispersion into a second solvent having a specific gravity and a boiling point higher than that of the first solvent to form a layer without mixing the nanoparticle dispersion on the second solvent. The removal of the first solvent may be performed to form a monomolecular film made of the nanoparticles on the second solvent.

In this case, the nanoparticles are not dissolved in the first solvent but are dispersed in the first solvent, and after pore the nanoparticle dispersion liquid, the first solvent is completely removed by evaporation to form a monomolecular film composed of nanoparticles only. .

Here, the nanoparticles may be gold (Au) particles having an average particle diameter of 1 to 10 nm as a catalyst material for growing the nanowires.

As an example of forming a monomolecular film made of nanoparticles by the Langer-Schaefer method, gold nanoparticles are dispersed in chloroform which is not mixed with distilled water and has a specific gravity lower than that of distilled water, and the gold nanoparticle dispersion is so formed that monomolecular film is formed in distilled water. After ringing, waiting 10 minutes until the chloroform is completely evaporated, the gold nanoparticle monolayer is formed on the distilled water.

In the nanoparticle adsorption step (S120), a polymer stamp having a pattern formed on a surface thereof is contacted with the nanoparticle monolayer to adsorb nanoparticles to a pattern of the polymer stamp.

The polymer stamp may be made of a poly dimethyl siloxane (PDMS) material which is widely used for imprint lithography processes, etc. due to its flexible characteristics, and the pattern of the polymer stamp surface may be formed through a pattern transfer method from a metal stamp.

In the nanoparticle printing step (S130), the nanoparticles are adsorbed on the pattern of the polymer stamp, the second solvent on the surface of the polymer stamp is removed, and the nanoparticles adsorbed on the pattern surface of the polymer stamp on the second substrate to grow the nanowires. The particles are brought into contact with each other, that is, nanoparticles on the pattern surface of the polymer stamp are printed on the second substrate by a microcontact printing method.

When the nanoparticles are printed and the polymer stamp is separated, a patterned nanoparticle catalyst for nanowire growth is formed on the second substrate.

In the nanowire growth step (S240), the nanowires are grown from the catalyst on the second substrate by a CVD method generally used for nanowire growth.

The catalyst pattern for nanowire growth formed through the above steps is based on the Langzier-Schaefer method and the microcontact printing method, and does not require expensive equipment such as deposition equipment, and also has a short process time. In addition, although many gold catalysts have been conventionally used, the method has an advantage that the gold catalyst is required only in the pattern portion.

The pattern formed on the surface of the polymer stamp is most preferable because it is formed in a cross shape to form a catalyst pattern on the substrate by one printing. However, forming a pattern on the surface of the polymer stamp in a cross shape may be a problem in terms of manufacturing cost than forming the pattern in a specific direction such as left and right directions.

When the pattern is not formed in the polymer stamp in a cross shape, and the pattern is formed only in a specific direction, the above printing may be performed two or more times to obtain almost the same result. For example, the crossover catalyst pattern may be formed when printing in the left and right directions when the primary printing, and in the vertical direction when the secondary printing.

Figure 3 schematically shows another example of a method for forming a nanowire of the second substrate, nanoparticle monolayer film forming step (S310), nanoparticle adsorption step (S320), nanoparticle primary printing step (S330), nano Particle resorption step (S340), nanoparticle secondary printing step (S350) and nanowire growth step (S360) is made.

In the nanoparticle monolayer film forming step (S310), as described above, the nanoparticle monolayer is formed by a Langmuir-Schaffer method. In the nanoparticle adsorption step (S320), a polymer stamp having a pattern formed on a surface thereof is contacted with the nanoparticle monolayer to adsorb nanoparticles to a pattern of the polymer stamp. In the nanoparticle primary printing step (S330), nanoparticles adsorbed on the surface of the polymer stamp pattern are brought into contact with the second substrate, and the nanoparticles are primarily printed on the second substrate in a specific direction.

In the nanoparticle resorption step (S340), after the first printing, the polymer stamp is contacted with the nanoparticle monolayer again, so that the nanoparticles are resorbed to the pattern of the polymer stamp. In the nanoparticle secondary printing step (S350), the nanoparticles adsorbed on the surface of the polymer stamp pattern are brought into contact with the primary printed second substrate again, and the secondary particles are printed in a direction intersecting the direction in which the nanoparticles are first printed on the substrate. do.

Through the above processes, the cross catalyst pattern may be formed on the substrate. Thereafter, as described above, the nanowires are grown on the second substrate using the formed nanopattern as a catalyst by the CVD method (S360).

The nanowire forming method shown in FIG. 3 can form a cross-catalyzed catalyst pattern through two printings using a polymer stamp having a pattern formed in a specific direction, and undergoes one nanowire growth process, It is suitable for forming nanowires.

Figure 3 schematically shows another example of the method of forming a nanowire of the second substrate, nanoparticle monolayer film forming step (S410), nanoparticle adsorption step (S420), nanoparticle primary printing step (S430), It comprises a first nanowire growth step (S440), nanoparticle resorption step (S450), nanoparticle secondary printing step (S460) and a second nanowire growth step (S470).

In the nanoparticle monolayer film forming step (S410), the nanoparticle monolayer is formed by a Langmuir-Schaffer method. In the nanoparticle adsorption step (S420), a polymer stamp having a pattern formed on a surface thereof is contacted with a nanoparticle monolayer to adsorb the nanoparticles to a pattern of the polymer stamp. In the nanoparticle primary printing step (S430), the nanoparticles are contacted with the surface of the polymer stamp pattern to the second substrate, and the nanoparticles are first printed onto the second substrate. In the first nanowire growth step (S440), the first nanowire patterned in a specific direction is formed using the nanoparticles primarily printed on the second substrate as a catalyst by CVD or the like.

The second nanowire may be formed by repeatedly performing the above-described steps of forming the first nanowire (S420 to S440). That is, in the nanoparticle resorption step (S450), the polymer stamp is contacted with the nanoparticle monolayer again to resorb the nanoparticles to the pattern of the polymer stamp. In the nanoparticle secondary printing step (S460), the second substrate on which the first nanowire is grown is contacted with the nanoparticles adsorbed on the surface of the polymer stamp pattern in a direction intersecting with the direction in which the primary printing is performed, thereby allowing the nanoparticles to contact the second substrate. Second printing on the substrate.

In this case, the secondary printing may be performed by printing nanoparticles adsorbed on the intaglio portion of the polymer stamp. After the nanoparticles are adsorbed onto the polymer stamp pattern, the nanoparticles of the embossed portion are printed on the surface of the pattern of the polymer stamp, that is, on the other substrate for forming the nanowire, and then the negative portion is grown on the first nanowire. It can be achieved by printing the nanoparticles adsorbed on the intaglio portion of the polymer stamp by applying a force enough to contact the. In the second nanowire growth step (S470), a second nanowire patterned in a direction crossing the first nanowire is formed by using the nanoparticles printed on the first substrate as a catalyst.

In the method of forming a nanowire shown in FIG. 4, since there are two growths of the nanowire, it is possible to grow nanowires of heterogeneous materials as well as the same material. For example, SnO ₂ nanowires may be grown in left and right directions and Ga ₂ O ₃ nanowires may be grown in vertical directions. At the intersections, nanowires of both materials grow.

The nanowire transition secures one of the first substrate 110 and the second substrate 120, and slides the other substrate so that the nanowires formed on the second substrate 120 are transferred to the first substrate 110. Transition on the PMMA pattern. The first substrate 110 and the second substrate 120 may slide any substrate. However, when the second substrate 120 is placed on the upper side and the first substrate 110 is slid from the bottom, the pattern transition may be advantageous. .

For nanowire pattern transfer, the present invention provides a nanowire pattern transfer device.

5a schematically illustrates a nanowire pattern transfer device according to the present invention, and FIG. 5b is a prototype photograph of the nanowire pattern transfer device.

5A and 5B, the nanowire pattern transition apparatus according to the present invention includes a housing 510, a height adjusting part 520, an upper holder 530, a sliding stage part 540, a lower holder 550, and It includes a control unit (not shown).

The housing 510 has a structure in which the upper plate 501 and the lower plate 502 are connected by a plurality of support bars 503 in the vertical direction.

The height adjusting unit 520 is formed through the upper plate 501 and adjusts a gap between the first substrate on which the nanowires are formed and the second substrate transferring the nanowires. The height adjusting unit 520 may use an adjustment screw as shown in FIG. 5A, and electrical height adjustment may be performed through the control unit.

The height adjusting unit 520 adjusts the force when the substrate fixed to the bottom and the substrate located in the upper contact, the force is calculated by the pressure using a torque meter. By using this, the nanowires may be contacted at a constant pressure between the substrate positioned on the upper side and the substrate fixed to the lower side.

The upper holder 530 is formed below the height adjusting part 520, and any one of the first substrate and the second substrate, preferably the second substrate, is fixed.

The sliding stage 540 is formed on the lower plate 502 and moves in at least one of the x-axis direction and the y-axis direction on the xy coordinates so as to form a nanowire pattern aligned in a desired shape at a desired position. It has a structure.

The lower holder 550 is formed on the sliding stage 540, and the other of the first substrate and the second substrate, preferably the first substrate, is fixed.

The controller controls a moving speed, a moving direction, a moving distance, and the like of the sliding stage unit 540.

For example, the speed at which the first substrate moves by the movement of the sliding stage unit 540 through the control unit can be determined as 1 mm / s, and the speed can be freely adjusted by operating the computer program built in the control unit. Do.

Therefore, the control unit helps to maintain the uniformity and direction of the nanowires by maintaining a constant force and a force moving in the horizontal direction pressing the substrate located at the top to the bottom.

On the other hand, one side of the upper holder 530 may be formed with a guide 560 in the vertical direction. The guide 560 serves to prevent shaking of the upper holder 530 by dispersing the force in the horizontal direction transmitted to the substrate fixed to the upper holder 530 during the nanowire pattern transition.

The upper holder 530 and the lower holder 550 are connected to a vacuum pump (not shown) through the respective vacuum connection portions 571a and 570b to fix the first substrate and the second substrate through the vacuum. There may be.

The nanowire pattern transfer device requires a relatively short process for nanowire pattern transfer, and can form a nanowire pattern of good quality in a desired pattern at low cost. In addition, it is possible to control the movement speed, the movement direction, etc. of the sliding stage through the control unit, there is an advantage that can create a highly reproducible patterned nanowire pattern essential for the stability of the nanowire device.

6 is a SEM image showing the transition of the nanowires using the nanowire pattern transfer apparatus according to the present invention, the substrate used is a self-assembled monomolecular film treated with 3-aminoprophyltrimethoxyslane (APS) on the SiO ₂ / Si substrate Was used, and the transferred nanowires were SnO ₂ nanowires.

Referring to FIG. 6, it can be seen that the SnO ₂ nanowires are aligned in one direction (up and down direction).

7A and 7B illustrate a nanowire pattern formed on a PMMA film by using Langer-Schaefer technology and microcontact printing. FIG. 7A is a 10 μm thick line pattern formed in an up-down direction. Fig. 7B is formed in a lattice pattern with a thickness of 50 mu m.

8A and 8B illustrate the transition of SnO ₂ nanowires onto a lattice-shaped PMMA film pattern using the nanowire pattern transfer device according to the present invention. Referring to FIG. 8B, the nanowires are aligned and transferred in one direction (up and down direction) by the direction of the nanowire pattern transfer device, and show a state of being transferred in a pattern shape.

9A to 9D show AFM images, SEM images, and voltage-current characteristics of FET devices fabricated using nanowires formed using the nanowire pattern transition method according to the present invention.

Referring to FIGS. 9A and 9B, nanowires are formed to maintain directivity and a pattern, and the manufactured field effect transistor (FET) device has a voltage of a typical n-type semiconductor, as shown in FIGS. 9C and 9D. -Showed current characteristics

Although the above has been described with reference to one embodiment of the present invention, various changes and modifications can be made at the level of those skilled in the art. Such changes and modifications may belong to the present invention without departing from the scope of the present invention. Therefore, the scope of the present invention will be determined by the claims described below.

1 schematically illustrates a nanowire pattern transfer method according to an embodiment of the present invention.

2 to 4 schematically show examples of a method for forming nanowires of a second substrate.

5a schematically illustrates a nanowire pattern transfer device according to the present invention, and FIG. 5b is a prototype photograph of the nanowire pattern transfer device.

6 is a SEM photograph showing that the nanowires are transferred using the nanowire pattern transfer apparatus according to the present invention.

7A and 7B illustrate the formation of nanowire patterns on PMMA films using Langer-Schaefer technology and microcontact printing.

8A and 8B illustrate the transition of SnO ₂ nanowires onto a PMMA film pattern having a rectangular shape using the nanowire pattern transfer device according to the present invention.

9A to 9D show AFM images, SEM images, and voltage-current characteristics of FET devices fabricated using nanowires formed using the nanowire pattern transition method according to the present invention.

Claims (24)

delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete A housing having a structure in which the upper plate and the lower plate are connected to a plurality of supports in the vertical direction; A height adjusting unit formed through the upper plate and adjusting a distance between the first substrate on which the nanowires are formed and the second substrate transferring the nanowires; An upper holder formed below the height adjusting part and fixing one of the first and second substrates; A sliding stage unit formed on the lower plate and moving on x-y coordinates; A lower holder formed on the sliding stage part and to which the other of the first substrate and the second substrate is fixed; And Nanowire pattern transfer device comprising a control unit for controlling the movement of the sliding stage. 21. The method of claim 20, A guide is formed on one side of the upper holder in a vertical direction, nanowire pattern transfer device, characterized in that to prevent shaking of the upper holder. 21. The method of claim 20, And the upper holder and the lower holder are connected to a vacuum pump to fix the first substrate and the second substrate. 21. The method of claim 20, And the sliding stage unit moves in at least one of an x-axis direction and a y-axis direction. 21. The method of claim 20, The second substrate is fixed to the upper holder, And the first substrate is fixed to the lower holder.

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