KR101605655B1 - Method for fabricating wafer structure having lateral junction - Google Patents
Method for fabricating wafer structure having lateral junction Download PDFInfo
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- KR101605655B1 KR101605655B1 KR1020150052990A KR20150052990A KR101605655B1 KR 101605655 B1 KR101605655 B1 KR 101605655B1 KR 1020150052990 A KR1020150052990 A KR 1020150052990A KR 20150052990 A KR20150052990 A KR 20150052990A KR 101605655 B1 KR101605655 B1 KR 101605655B1
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- wafer structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- Computer Hardware Design (AREA)
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Abstract
The present invention relates to a method of manufacturing a wafer structure having a horizontal bond, comprising: forming a wafer structure on a first substrate; Cutting the wafer structure to form a planar vertical wafer structure; And transferring the vertical wafer structure onto a plane of a second substrate; Wherein the vertical wafer structure is transferred onto a horizontal wafer structure on a plane of the second substrate in the transferring step.
The manufacturing method of the present invention improves the mechanical stability and can reduce the occurrence of errors in the process.
Description
The present invention relates to a method of manufacturing a wafer structure having a horizontal bonding, a method of manufacturing a light emitting device using the same, and a light emitting device.
As fundamental limitations are raised in increasing the degree of integration in electronic circuits, there is a growing interest in photonic integrated circuits using photons. For example, optical processing is indispensable for the implementation of a quantum computer, and a device capable of efficiently driving a light source efficiently is needed to improve the performance of optical processing. An example of such a device is a photonic crystal laser driven by current.
A method of manufacturing a photonic crystal laser driven by an electric current is a method using a free-standing structure. For example, a method of forming a current column through which a current can flow for current driving can be used. Specifically, a pattern is formed on the upper surface of a semiconductor wafer by electron beam lithography, and then a part of the sacrifice layer is chemically etched to form a current A column is formed, and a current is injected into the resonator region so that a current flows to the remaining sacrificial layer. However, it is difficult to finely control the thickness of the current column due to the chemical etching time, and the chemical etching is inexpensive in terms of cost, but the reproducibility of the process is low There are disadvantages. In addition, the quality level of the photonic crystal mode can be lowered by the current column.
In another manufacturing method, U.S. Patent No. 8569739 discloses a structure in which current flows only through the resonator region through chemical etching of the quantum well layer. Such a structure does not require a current column, but has poor selectivity between the quantum well and the material forming the slab, and it is difficult to finely control the size of the quantum well layer, and the quantum wells are easily removed and the upper and lower layers are liable to stick to each other.
As another manufacturing method, there is a method of implementing a lateral pin junction (Nature Photonics, vol 5, p297-300, 2011) in order to manufacture a current driven photonic crystal laser. This method does not require control through chemical etching and can maintain a high durability value because there is no current pillar, but post-doping is required to introduce p-type doping and n-type doping to desired positions. The process must be performed, and the process cost is increased, and crystal damage may occur by the ion implantation used in the post-doping process.
SUMMARY OF THE INVENTION The present invention has been made in order to solve the above-mentioned problems, and it is an object of the present invention to provide a method of manufacturing a wafer structure having a horizontal joint having a simplified manufacturing process and improved process reproducibility.
The present invention also provides a method of manufacturing a light emitting device using a manufacturing method of a wafer structure having a horizontal bonding.
Further, the present invention provides a light emitting device manufactured by the above manufacturing method.
The problems to be solved by the present invention are not limited to the above-mentioned problems, and other matters not mentioned can be clearly understood by those skilled in the art from the following description.
According to one aspect of the present invention,
Forming a wafer structure on a first substrate; Cutting the wafer structure to form a planar vertical wafer structure; And transferring the vertical wafer structure onto a plane of a second substrate; Wherein the vertical wafer structure is transferred to a horizontal wafer structure on a plane of the second substrate in the transferring step, wherein the vertical wafer structure is transferred to a horizontal wafer structure.
According to one embodiment of the present invention, the vertical wafer structure may have an aspect ratio of 2: 1 to 20: 1.
According to one embodiment of the present invention, the wafer structure includes a quantum structure layer, and the quantum structure layer may include at least one of a quantum dot, a quantum well, a quantum well, a quantum wire and a quantum disk.
According to one embodiment of the present invention, the wafer structure may comprise a junction of two or more of a p-type layer, an n-type layer and an i-type layer.
According to an embodiment of the present invention, the step of forming the wafer structure on the first substrate may be epitaxial growth.
According to an embodiment of the present invention, the step of forming the vertical wafer structure includes: forming a patterned mask layer on the wafer structure; And etching the wafer structure; . ≪ / RTI >
According to an embodiment of the present invention, the first substrate and the second substrate may be different substrates.
According to one embodiment of the present invention, the step of transferring comprises the steps of: combining the vertical wafer structure with a stamp; Positioning the wafer structure on a second substrate after the bonding step; And separating the wafer structure and the stamp; . ≪ / RTI >
According to an embodiment of the present invention, the step of transferring comprises: horizontally laying down the vertical wafer structure; Combining the laid wafer structure with a stamp; Positioning the wafer structure on a second substrate after the bonding step; And separating the wafer structure and the stamp; . ≪ / RTI >
According to one embodiment of the present invention, the stamp may be a resin stamp.
According to another aspect of the present invention,
The present invention relates to a method of manufacturing a light emitting device including a method of manufacturing a wafer structure having a horizontal bonding.
According to an embodiment of the present invention, a method of manufacturing the light emitting device may include patterning a wafer structure having a horizontal bonding.
According to one embodiment of the present invention, an optical resonator structure can be formed on a wafer structure having a horizontal bonding.
According to another aspect of the present invention,
Board; And a wafer structure having at least one horizontal bond on the substrate; And the horizontal junction includes a quantum structure.
According to an embodiment of the present invention, a horizontal wafer structure includes an optical resonator structure formed by patterning the structure, and may include a quantum structure in the optical resonator structure.
The manufacturing method of the present invention can simplify the process steps and improve the efficiency and economy of the process.
Further, the manufacturing method of the present invention can manufacture a lateral semiconductor junction without introducing post-doping in a post-process, and can reduce the damage of the semiconductor crystal due to the post-doping.
Further, the production method of the present invention can improve the reproducibility of the process because the occurrence of errors in the process is low.
Further, unlike the light emitting device in which the current column is conventionally introduced, the manufacturing method of the present invention allows the quantum structure to be located only inside the optical resonator since the quantum structure exists in a part of the slab plane.
Further, the manufacturing method of the present invention can provide a light emitting device having improved mechanical stability and performance and capable of current driving, and the method can be applied to manufacture of photocrystalline elements capable of current driving.
Figure 1 illustrates, by way of example, a flow diagram of a method of manufacturing a wafer structure having a horizontal bond, in accordance with an embodiment of the present invention.
Figure 2 illustrates, by way of example, a process cross-sectional view of a method of making a wafer structure having a horizontal bond, in accordance with an embodiment of the present invention.
2A illustrates, by way of example, a cross-sectional view of a wafer structure, in accordance with an embodiment of the present invention.
Figure 2b illustrates an exemplary process cross-sectional view of step S2 of forming a vertical wafer structure, in accordance with an embodiment of the present invention.
FIG. 2C is an exemplary process cross-sectional view of step S3 of planar transfer, according to one embodiment of the present invention.
FIG. 2D illustrates an exemplary process cross-sectional view of step S3 of planar transfer, according to one embodiment of the present invention.
Fig. 3 illustrates an exemplary flow chart of a method of manufacturing a light emitting device according to an embodiment of the present invention.
Fig. 4 exemplifies a process sectional view of a method of manufacturing a light emitting device according to an embodiment of the present invention.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description of the present invention, detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear. Also, terminologies used herein are terms used to properly represent preferred embodiments of the present invention, which may vary depending on the user, intent of the operator, or custom in the field to which the present invention belongs. Therefore, the definitions of these terms should be based on the contents throughout this specification. Like reference symbols in the drawings denote like elements.
The present invention relates to a method of manufacturing a wafer structure having a horizontal bond.
A method of manufacturing a wafer structure having a horizontal joint according to the present invention will be described with reference to FIGS. 1 to 2D.
According to one embodiment of the present invention, FIG. 1 illustrates a flow diagram of a method of manufacturing a wafer structure having a horizontal bond according to an embodiment of the present invention. Referring to FIG. 1, , Forming a wafer structure (S1), forming a vertical wafer structure (S2), and planarizing (S3).
The above manufacturing method will be described in more detail with reference to Fig. 2, and Fig. 2 exemplarily shows a process sectional view of a method of manufacturing a wafer structure having a horizontal joint according to an embodiment of the present invention.
Forming a wafer structure S1 )
The step S1 of forming the wafer structure is a step of epitaxially growing the semiconductor thin film crystal on the
Step S1 may be performed by a vapor phase growth method such as chemical vapor deposition (CVD), physical vapor deposition (PVD), metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), or hydride vapor phase epitaxy The
The
The
The
The quantum structure layer may include a semiconductor material used for the i-type layer or may include a semiconductor material used for the i-type layer or may include a semiconductor material used for the i-type layer or a semiconductor material including a Group II-VI compound, a Group II- CdSe, CdTe, ZnS, ZnSe, CdSe, CdTe, CdSe, CdTe, ZnSe, ZnSe, and ZnSe, and at least one kind of Group II-IV- But is not limited to, ZnTe, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InP, InAs, InSb and the like.
The n-type layer may include an n-type semiconductor material emitting light in a visible light region or a communication light region, for example, a 350 nm to 2 탆 wavelength region, and examples of the n-type semiconductor material include GaN, GaAs, GaN, GaN, GaN, GaN, GaN, AlN, AlN, AlN, AlN, AlN, AlN, InAlNP, InAlN, InAlN, InAlN, InAlN, InAlGaN, InAlGaN, InAlGaN, InAlGaN, InAlGaN, GaAlNb, InAlGaN, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPS, InAlNSb, InAlPAs, InAlPSb, InGaAsP, and the like, but the present invention is not limited thereto.
According to one embodiment of the present invention, the n-type semiconductor material is preferably a GaN, GaNP, GaNAs, GaNSb, AlGaN, InGaN, BAlGaN, GaAlNP, GaAlNAs, InAlGaN, GaAlNSb, GaInNP, GaInNAs , GaInNSb; And InP, InGaAsP, GaAs, InGaAs, and AlGaAs that emit light in the communication wavelength region. However, the present invention is not limited thereto.
The p-type layer includes a p-type semiconductor material emitting light in a visible light region or a communication light region, for example, a 350 nm to 2 mu m wavelength region, and examples of the p-type semiconductor material include GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, BNP, BNAs, BPAs, GaAs, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, AlGaN, InAlGaN, GaAlNAs, InAlGaN, GaAlNSb, InAlGaN, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlNb, InAlGaN, InAlGaN, BAlGaN, InAlPAs, InAlPb, InGaAsP, and the like, but the present invention is not limited thereto.
According to an embodiment of the present invention, the p-type semiconductor material is preferably a GaN, GaNP, GaNAs, GaNSb, AlGaN, InGaN, BAlGaN, GaAlNP, GaAlNAs, InAlGaN, GaAlNSb, GaInNP, GaInNAs, GaInNSb; And InP, InGaAsP, GaAs, InGaAs, and AlGaAs that emit light in the communication wavelength region. However, the present invention is not limited thereto.
The i-type layer is an intrinsic layer and includes an i-type semiconductor material emitting light in a visible light region or a communication light region, for example, a 350 nm to 2 탆 wavelength region. Examples of the i- GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, BNP, BNAs, BPAs, GaAs, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, GaInPb, GaInPb, GaInPb, GaInPb, GaInPb, GaInPb, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNb, InAlGaN, InAlGaN, AlGaN, AlGaAs, InGaN, InNP, InGaAs, InNAs, InNSb, InPAs, InPSb, BAlGaN, BAlInN, BGaInN, InAlNAs, InAlNSb, InAlPAs, InAlPSb, InGaAsP, and the like, but are not limited thereto.
According to an embodiment of the present invention, the i-type semiconductor material is preferably a GaN, GaNP, GaNAs, GaNSb, AlGaN, InGaN, BAlGaN, GaAlNP, GaAlNAs, InAlGaN, GaAlNSb, GaInNP, GaInNAs, GaInNSb; And InP, InGaAsP, GaAs, InGaAs, and AlGaAs that emit light in the communication wavelength region. However, the present invention is not limited thereto.
Forming a vertical wafer structure S2 )
Step S2 of forming a vertical wafer structure is a step of cutting the
Referring to FIG. 2B, FIG. 2B illustrates a process sectional view of a step S2 of forming a vertical wafer structure, according to an embodiment of the present invention, wherein step S2 in FIG. (S2a) of forming a wafer structure (S2a), and etching the wafer structure (S2b).
Step S2a is a step of forming a
Examples of the soft mask include, but are not limited to, a photoresist mask and the like.
The step S2b of etching the wafer structure is a step of etching the
Step S2 may further include a step S2c of removing the mask layer, and step S2c is a step of removing the etching mask layer after step S2b (not shown).
The vertical wafer structure 20 'may have a thickness of 0.5 탆 or more, preferably 1 탆 to 10 mm. The vertical wafer structure 20 'may have an aspect ratio of 2: 1 to 20: 1, preferably an aspect ratio of 5: 1 to 10: 1.
Planar The step of transferring ( S3 )
The planar transfer step S3 is a step of transferring the vertical wafer structure 20 'formed in the step S2 of forming the vertical wafer structure onto the plane of the second substrate 10' Type wafer structure 20 'is transferred to the horizontal flat wafer structure 20' 'lying on the plane of the second substrate 10'.
According to one embodiment of the present invention, step S3 may transfer the vertical wafer structure 20 'using transfer printing.
The transfer printing in the step S3 of planar transfer will be described in detail with reference to Figs. 2C and 2D.
In accordance with one embodiment of the present invention, referring to FIG. 2C, as an example of a transfer printing method, FIG. 2C is a cross-sectional view of a step S3 of planar transfer, according to an embodiment of the present invention, Step S3 in Fig. 2C is a step S3a of laying down on the substrate, a step S3b of combining the stamps, a step S3c of positioning on the second substrate, and a step of separating the stamps S3d ).
The step S3a of laying down on the substrate is a step of laying the vertical wafer structure 20 'on the plane of the
Step S3b of joining the stamp is a step of bonding the
The
The step S3c of placing on the second substrate is a step of positioning the
Step S3d of separating the stamp is a step of separating the
The second substrate 10 'is an amorphous or crystalline substrate which is different from the
According to another embodiment of the present invention, referring to FIG. 2D, FIG. 2D illustrates a process cross-sectional view of a step S3 of planar transfer, according to an embodiment of the present invention, , Step S3 in FIG. 2D may include a step S3a 'of combining the stamp, a step S3b' of positioning on the second substrate, and a step S3c 'of separating the stamp .
The step of joining the stamp S3a 'is the step of joining the vertical wafer structure 20' and the
The step S3b 'of positioning on the second substrate is the step of positioning the vertical wafer structure 20' stamped on the
Step S3c 'of separating the stamp is a step of separating the horizontal wafer structure 20''and the
According to an embodiment of the present invention, a method of manufacturing a wafer structure having a horizontal joint according to the present invention may further include a necessary process depending on the configuration of the wafer structure, the use of the wafer structure, and the like.
According to an embodiment of the present invention, a method of manufacturing a wafer structure having a horizontal bonding according to the present invention can be applied to a method of manufacturing a light emitting device.
A method of manufacturing a light emitting device according to the present invention will be described with reference to FIGS. 3 to 4, according to an embodiment of the present invention.
3 is a flowchart illustrating a method of manufacturing a light emitting device according to an embodiment of the present invention. Referring to FIG. 3, The method may further include a step (S4) including a step (S1 to S3) proposed in the method of manufacturing the structure and patterning.
4, there is shown a process sectional view of a method of manufacturing a
The patterning step S4 is a step of manufacturing the
The patterning step S4 may be patterned by using FIB (Focused Ion Beam), E-beam lithograpy using electron beam energy, photolithography, nanoimprint, or the like.
In accordance with an embodiment of the present invention, the
According to an embodiment of the present invention, the method of manufacturing a light emitting device according to the present invention may further include a necessary process depending on the configuration of the light emitting device, the use of the light emitting device, and the like.
The present invention relates to a light emitting device manufactured by the manufacturing method according to the present invention.
The light emitting device includes: a substrate; And a wafer structure having at least one horizontal bond on the substrate, and may further include an electrode for current driving of the light emitting device.
The substrate is as described above, and the wafer structure includes a slab that includes a horizontal bond, and may include a quantum structure in the wafer structure. For example, it includes a horizontal junction made of at least two of a p-type layer, an n-type layer and an i-type layer (intrinsic layer), and preferably includes a quantum structure layer (A) pin, (b) pip, or (c) nip horizontal joins.
According to an embodiment of the present invention, the light emitting device is a photonic crystal structure and may include (a) a pin-horizontal junction. The wafer structure having the horizontal bonding may include an optical resonator structure formed by patterning the structure. Since the i-type layer including the quantum structure in the horizontal bonding exists in a part of the slab plane, A quantum structure can be placed inside the structure.
The light emitting device may be applied to a photonic crystal active device such as a laser, an LED, or the like.
It will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the following claims It will be understood.
Example One
(1) Fabrication of semiconductor thin film wafers
(InGaAsP barrier / InGaAsP quantum dot / InGaAsP barrier) - InP (n-InGaAsP barrier) / InGaAsP barrier) using an MOCVD method. type.
(2) Etching of semiconductor thin film wafers
After forming a patterned mask etched layer on the InP wafer, the wafer was exposed to a temperature of 300 캜 and Ar of 3.5 sccm and Cl 2 of 6.0 sccm and etched by CAIBE (chemically assisted ion beam etching) for 5 minutes to prepare a vertical InP wafer Respectively.
(3) Transfer of semiconductor thin film wafer
The vertical InP wafer was transferred onto a silicon oxide substrate using a PDMS (polydimethylsiloxane) stamper to form a horizontal InP wafer.
(4) Completion of patterned light emitting device
The horizontal InP wafer was etched by Chemically Assisted Ion Beam Etching to be cut into three horizontal InP wafers and then patterned by electron beam lithography to produce a light emitting device having a one-dimensional stick-like resonator structure .
10: first substrate
10 ': second substrate
20: wafer structure
20 ': Vertical wafer structure
20 '': Horizontal wafer structure
30: mask layer
40: Stamper
100: Light emitting element
Claims (15)
Cutting the wafer structure to form a planar vertical wafer structure; And
Transferring the vertical wafer structure onto a plane of a second substrate;
Lt; / RTI >
In the transferring step, the vertical wafer structure is transferred to a horizontal wafer structure on a plane of the second substrate,
Wherein the step of transferring comprises:
Coupling the vertical wafer structure and the stamp;
Positioning the wafer structure on a second substrate after the bonding step; And
Separating the wafer structure and the stamp;
, Or
Laying the vertical wafer structure horizontally;
Combining the laid wafer structure with a stamp;
Positioning the wafer structure on a second substrate after the bonding step; And
Separating the wafer structure and the stamp;
≪ / RTI >
A method of manufacturing a wafer structure having a horizontal joint.
Wherein the vertical wafer structure has an aspect ratio of 2: 1 to 20: 1.
Wherein the wafer structure comprises a quantum structure layer,
Wherein the quantum structure layer comprises at least one of a quantum dot, a quantum well, a quantum well, a quantum wire and a quantum disk.
Wherein the wafer structure comprises a junction of two or more of a p-type layer, an n-type layer and an i-type layer.
Wherein forming the wafer structure on the first substrate is epitaxial growth.
Wherein forming the vertical wafer structure comprises:
Forming a patterned mask layer on the wafer structure; And
Etching the wafer structure;
≪ / RTI >
Wherein the first substrate and the second substrate are different substrates from each other.
Wherein the stamp is a resin stamp.
Wherein the method of fabricating the light emitting device includes patterning a wafer structure having a horizontal bond.
Wherein the patterning step forms an optical resonator structure in a wafer structure having a horizontal bond.
A wafer structure having at least one horizontal bond on the substrate;
/ RTI >
Wherein the horizontal joining comprises a quantum structure,
Wherein the wafer structure having the horizontal bond comprises a light resonator structure formed by patterning the structure and a quantum structure within the light resonator structure.
Light emitting element.
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| KR1020150052990A KR101605655B1 (en) | 2015-04-15 | 2015-04-15 | Method for fabricating wafer structure having lateral junction |
| PCT/KR2016/000755 WO2016167450A1 (en) | 2015-04-15 | 2016-01-25 | Method for manufacturing wafer structure having horizontal junction |
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Citations (2)
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| KR101345456B1 (en) * | 2007-08-29 | 2013-12-27 | 재단법인서울대학교산학협력재단 | Horizontal nanowire growth method at selective location, nanowire prepared therefrom and nano device comprising the same |
| KR101352958B1 (en) * | 2012-11-22 | 2014-01-21 | 전북대학교산학협력단 | Manufacturing method of nanowire and diode comprising nanowire munufactured using the same |
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| CN103646848B (en) * | 2004-06-04 | 2018-06-05 | 伊利诺伊大学评议会 | The method of assembling printable semiconductor elements and manufacture electronic device |
| KR101064380B1 (en) * | 2009-02-27 | 2011-09-14 | 고려대학교 산학협력단 | Transition apparatus for the nano wire pattern |
| EP2740162B1 (en) * | 2011-08-05 | 2019-07-03 | Wostec, Inc. | Light emitting diode with nanostructured layer, method of making a light emitting diode and nanomask used in the method. |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR101345456B1 (en) * | 2007-08-29 | 2013-12-27 | 재단법인서울대학교산학협력재단 | Horizontal nanowire growth method at selective location, nanowire prepared therefrom and nano device comprising the same |
| KR101352958B1 (en) * | 2012-11-22 | 2014-01-21 | 전북대학교산학협력단 | Manufacturing method of nanowire and diode comprising nanowire munufactured using the same |
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