CN113913775A - 对向靶磁控溅射无损伤薄膜沉积系统 - Google Patents
对向靶磁控溅射无损伤薄膜沉积系统 Download PDFInfo
- Publication number
- CN113913775A CN113913775A CN202111157623.6A CN202111157623A CN113913775A CN 113913775 A CN113913775 A CN 113913775A CN 202111157623 A CN202111157623 A CN 202111157623A CN 113913775 A CN113913775 A CN 113913775A
- Authority
- CN
- China
- Prior art keywords
- substrate
- magnetron sputtering
- opposite
- deposition system
- film deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 19
- 238000000151 deposition Methods 0.000 title claims abstract description 13
- 230000008021 deposition Effects 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000010408 film Substances 0.000 claims description 12
- 239000007787 solid Substances 0.000 claims description 4
- 238000000427 thin-film deposition Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 7
- 239000002245 particle Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- -1 oxygen anions Chemical class 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000013077 target material Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
本发明公开了一种对向靶磁控溅射无损伤薄膜沉积系统，包括衬底和两个对向靶，两个对向靶对称布置于衬底前方，并分别与衬底形成正、负250~300的夹角，在对向靶与衬底之间插入了一个网孔状金属板作为阳极，衬底两侧设置有磁场。本发明可以在室温下采用磁控溅射方法在有机薄膜上进行无损伤沉积TCO。
Description
技术领域
本发明属于透明导电氧化物薄膜领域，涉及一种对向靶磁控溅射无损伤薄膜沉积系统。
背景技术
在有机光电子器件中，如有机发光二极管、有机太阳能电池等，通常需要透明电极。很薄的金属可以用作电极，电阻率很低，但存在光透过率低、金属容易氧化、经常铜线短路等问题。透明导电氧化物（TCO）薄膜具有光透过率高、导电性能优良等特点，因此TCO是作为有机光电子器件中透明电极的最佳选择。
采用溶液法工艺制备TCO普遍存在稳定性低、电阻率高、重复性差等问题，产业化推广的可能性很小。基于真空工艺制备的TCO薄膜，具有稳定性高、电阻率低、重复性好等特点。直流磁控溅射沉积是目前制备TCO成熟度最高的产业化技术，然而在有机薄膜上沉积TCO，来自等离子体的加速高能荷电粒子（如二次电子和氧负离子等）直接对有机物衬底轰击，容易导致底层有机-无机杂化层的严重损坏，同时也会引起衬底温度升高，从而进一步影响有机光电器件的性能与寿命。采用原子层沉积（ALD）技术预先在有机薄膜上沉积一层TCO，阻挡后续磁控溅射过程中等离子体对有机薄膜的损伤，然而由于ALD技术的局限性（耗时、高温、有害气体处理、高成本等），ALD生长的缓冲层并不适合商业化推广。
目前也有一些方案来实现在有机衬底上采用磁控溅射进行低损伤的TCO沉积，主要分别为两类：通过降低溅射功率，减少等离子体中荷电粒子的能量，减少等离子体对衬底材料的轰击；另一类是通过对磁控溅射系统的优化设计，比如是对向靶磁控溅射技术，屏蔽掉部分荷电粒子。一般情况下，溅射功率低会导致溅射产额较低，从而降低了沉积速率，延长沉积时间。在对向靶磁控溅射系统中，由于磁场不能全部垂直于两靶形成闭合磁场，磁场的强度和结构受磁体的性质和排列方式的限制，使衬底暴露在部分磁力线中，使得部分等离子体中的荷电粒子（如二次电子、氧负离子等）将沿着磁力线移动，从等离子体区逃逸，轰击衬底，造成对有机薄膜的损伤。
发明内容
本发明的目的是提供一种对向靶磁控溅射无损伤薄膜沉积系统，从而可以在室温下采用磁控溅射方法在有机薄膜上进行无损伤沉积TCO。
为此，本发明采用的技术方案是这样的：对向靶磁控溅射无损伤薄膜沉积系统，包括衬底和两个对向靶，其特征在于：两个对向靶对称布置于衬底前方，并分别与衬底形成正、负250~300的夹角，在对向靶与衬底之间插入了一个网孔状金属板作为阳极。
进一步地，衬底两侧设置有磁场。
两个对向靶之间还具有一实心金属板作为阳极，与所述的网孔状金属板平行，设置在网孔状金属板相对于衬底的另一侧。
本发明的技术效果在于：首先，采用对向靶磁控溅射技术，为了提高从靶材被溅射出来的中性原子抵达衬底表面的密度，两个对向靶与衬底之间不是平行的，而是有一个夹角；其次，在对向靶与衬底之间插入了一个网孔状金属板，阻挡二次电子、氧负离子等高能粒子，避免对衬底材料的轰击；第三，在衬底两侧增加磁场，使得没有被金属网孔阻挡的二次电子、氧负离子在新增磁场的洛仑磁力作用下做螺旋式的拉莫尔进动，进一步减少衬底的直接轰击；第四，在对向靶之间设置了两个阳极，增加了两靶之间气体的等离子化强度，使更多的已电离荷电粒子轰击靶材，从而提高靶材的溅射产额。
附图说明
图1是本发明设计的对向靶磁控溅射无损伤薄膜沉积系统示意图。
具体实施方式
衬底1与水平面平行，衬底的两侧增加磁场，磁场强度为0.02~0.04 T，两个磁铁2的直径为15~30 mm。两个对向靶由屏蔽罩4、靶材5、阴极6及一对磁铁构成，由于两个对向靶对称相同，图中仅标记一个；两个靶中心位置的距离为70~110 mm可调，每个对向靶的直径为90~120 mm，与水平面构成的夹角α=300。
在对向靶与衬底之间插入了一个网孔状金属板3作为阳极，金属板与两个对向靶中心连线的垂直距离为60~80 mm。金属板的厚度为3~5 mm，长度为150~200 mm，宽度为120~150 mm，每个网孔的直径为8~10 mm，网孔均匀分布在金属板之中。衬底1与网孔状金属3的距离为30~50mm。
在对向靶之间还设有第二个阳极7，阳极7为实心金属板，与阳极3之间的距离为110~130 mm。实心金属板7的厚度为3~5 mm，长度为50~70 mm，宽度为120~150 mm。
Claims (3)
1.对向靶磁控溅射无损伤薄膜沉积系统，包括衬底和两个对向靶，其特征在于：两个对向靶对称布置于衬底前方，并分别与衬底形成正、负250~300的夹角，在对向靶与衬底之间插入了一个网孔状金属板作为阳极。
2.如权利要求1所述的对向靶磁控溅射无损伤薄膜沉积系统，其特征在于：衬底两侧设置有磁场。
3.如权利要求1或2所述的对向靶磁控溅射无损伤薄膜沉积系统，其特征在于：两个对向靶之间还具有一实心金属板作为阳极，与所述的网孔状金属板平行，设置在网孔状金属板相对于衬底的另一侧。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111157623.6A CN113913775A (zh) | 2021-09-30 | 2021-09-30 | 对向靶磁控溅射无损伤薄膜沉积系统 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111157623.6A CN113913775A (zh) | 2021-09-30 | 2021-09-30 | 对向靶磁控溅射无损伤薄膜沉积系统 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113913775A true CN113913775A (zh) | 2022-01-11 |
Family
ID=79237266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111157623.6A Pending CN113913775A (zh) | 2021-09-30 | 2021-09-30 | 对向靶磁控溅射无损伤薄膜沉积系统 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113913775A (zh) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05209265A (ja) * | 1991-09-25 | 1993-08-20 | Seiko Epson Corp | スパッタリング装置 |
| JP2000313958A (ja) * | 1999-04-28 | 2000-11-14 | Canon Inc | 薄膜形成装置及び薄膜形成方法 |
| JP2002069632A (ja) * | 2000-09-05 | 2002-03-08 | Canon Inc | スパッタ装置およびスパッタ方法 |
| JP2004332030A (ja) * | 2003-05-06 | 2004-11-25 | Nitto Denko Corp | 透明導電膜の製造方法 |
| US20100078309A1 (en) * | 2007-01-26 | 2010-04-01 | Osaka Vacuum, Ltd. | Sputtering method and sputtering apparatus |
| JP2014017377A (ja) * | 2012-07-09 | 2014-01-30 | Nitto Denko Corp | 化合物太陽電池およびその製法 |
| TW201411724A (zh) * | 2012-07-31 | 2014-03-16 | Soichi Ogawa | 透明導電膜及其製造方法 |
-
2021
- 2021-09-30 CN CN202111157623.6A patent/CN113913775A/zh active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05209265A (ja) * | 1991-09-25 | 1993-08-20 | Seiko Epson Corp | スパッタリング装置 |
| JP2000313958A (ja) * | 1999-04-28 | 2000-11-14 | Canon Inc | 薄膜形成装置及び薄膜形成方法 |
| JP2002069632A (ja) * | 2000-09-05 | 2002-03-08 | Canon Inc | スパッタ装置およびスパッタ方法 |
| JP2004332030A (ja) * | 2003-05-06 | 2004-11-25 | Nitto Denko Corp | 透明導電膜の製造方法 |
| US20100078309A1 (en) * | 2007-01-26 | 2010-04-01 | Osaka Vacuum, Ltd. | Sputtering method and sputtering apparatus |
| JP2014017377A (ja) * | 2012-07-09 | 2014-01-30 | Nitto Denko Corp | 化合物太陽電池およびその製法 |
| TW201411724A (zh) * | 2012-07-31 | 2014-03-16 | Soichi Ogawa | 透明導電膜及其製造方法 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101097329B1 (ko) | 스퍼터링 장치 | |
| KR20100044262A (ko) | 태양전지의 제조방법 | |
| CN202558926U (zh) | 一种可以实现在三维工件表面高速率沉积类金刚石膜的设备 | |
| Mian et al. | Improvement of the uniformity of structural and electrical properties of transparent conductive Al-doped ZnO thin films by inductively coupled plasma-assisted radio frequency magnetron sputtering | |
| CN113913775A (zh) | 对向靶磁控溅射无损伤薄膜沉积系统 | |
| CN112713212A (zh) | 一种基于双层透明导电氧化物薄膜的hjt电池及其制备方法 | |
| CN110714186A (zh) | 一种阴极体组件、磁控溅射阴极及磁控溅射装置 | |
| JP2018083971A (ja) | マグネトロンスパッタリング装置及び透明導電性酸化物膜の形成方法 | |
| CN103820759A (zh) | 一种提高矩形平面磁控溅射阴极靶材利用率的方法 | |
| WO2018068833A1 (en) | Magnet arrangement for a sputter deposition source and magnetron sputter deposition source | |
| CN105483630A (zh) | 一种制备柔性azo薄膜的方法 | |
| CN105506568A (zh) | 一种新型孪生外置旋转阴极 | |
| JP2004332030A (ja) | 透明導電膜の製造方法 | |
| CN104213089B (zh) | 磁控溅射设备及磁控溅射方法 | |
| CN202246844U (zh) | 磁水分离型平面磁控溅射靶 | |
| CN103361613A (zh) | 一种制备纳米柱状金属钨的方法 | |
| CN209974873U (zh) | 一种高场强高靶材利用率的阴极 | |
| KR20100036382A (ko) | 태양전지의 제조 방법 | |
| CN105449035A (zh) | 一种提高透明导电氧化物ITiO薄膜性能的方法 | |
| CN202688425U (zh) | 一种用于柔性基材磁控溅射镀膜靶材 | |
| KR20120000317A (ko) | 전자 물질막 형성 장치 | |
| CN205133730U (zh) | 一种制备柔性衬底薄膜的磁控溅射装置 | |
| CN110965036A (zh) | 稀土永磁体表面真空镀膜设备 | |
| KR102614010B1 (ko) | 시료와 간극이 있는 마스크를 이용한 투명전극의 증착 방법 | |
| CN116356273A (zh) | 一种异质结tco薄膜的制备方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20220111 |