CN113913773B - Hemispherical harmonic oscillator metal film plating device and method - Google Patents
Hemispherical harmonic oscillator metal film plating device and method Download PDFInfo
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- CN113913773B CN113913773B CN202111062039.2A CN202111062039A CN113913773B CN 113913773 B CN113913773 B CN 113913773B CN 202111062039 A CN202111062039 A CN 202111062039A CN 113913773 B CN113913773 B CN 113913773B
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- 239000002184 metal Substances 0.000 title claims abstract description 131
- 238000007747 plating Methods 0.000 title claims abstract description 81
- 238000000034 method Methods 0.000 title claims abstract description 28
- 230000007246 mechanism Effects 0.000 claims abstract description 73
- 238000000576 coating method Methods 0.000 claims abstract description 58
- 239000011248 coating agent Substances 0.000 claims abstract description 57
- 230000000712 assembly Effects 0.000 claims abstract description 33
- 238000000429 assembly Methods 0.000 claims abstract description 33
- 239000013077 target material Substances 0.000 claims abstract description 12
- 230000008569 process Effects 0.000 claims description 16
- 230000008859 change Effects 0.000 claims description 12
- 238000004544 sputter deposition Methods 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 7
- 230000032683 aging Effects 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 3
- 239000000306 component Substances 0.000 description 7
- 230000001276 controlling effect Effects 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000035882 stress Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 2
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- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
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Abstract
The invention provides a device and a method for plating a metal film layer of a hemispherical resonator, wherein the plating device comprises a revolution platform, a rotation mechanism and two film plating components; the rotation mechanism is arranged on the revolution platform and keeps a certain distance with the central axis of the revolution platform; the autorotation mechanism is provided with a groove for assembling the hemispherical harmonic oscillator; the two coating assemblies are arranged above the revolution platform and keep a certain distance with the central axis of the revolution platform; the two film plating assemblies comprise target materials, and the target materials face the revolution platform and form an included angle with the central axis of the revolution platform; the revolution platform and the rotation mechanism simultaneously revolve and rotate, and the two coating assemblies and the central axis of the revolution platform form different angles and are mutually matched for coating. The invention adopts the double-metal targets to simultaneously plate the same film material at multiple angles, the angles of the two targets and the harmonic oscillator are different, the blind area is avoided, the film plating efficiency can be effectively improved, in addition, the double targets are sputtered simultaneously, and the performance indexes such as film compactness, film stress and the like are obviously improved.
Description
Technical Field
The invention relates to the technical field of harmonic oscillator manufacturing, in particular to a metal film plating device and a metal film plating method for a hemispherical harmonic oscillator of a hemispherical resonator gyro core component, which are applied to plating of a hemispherical harmonic oscillator metal conductive film.
Background
The hemispherical resonator gyro is a novel vibrating gyro which senses the rotation of a base by utilizing the precession effect of a hemispherical resonator standing wave, and a vibration sensitive component is a hemispherical resonator. The metal film plating of the hemispherical resonator is an important link in the manufacturing process of the hemispherical resonator, and the quality of the performance directly has decisive influence on the quality of the hemispherical resonator, thereby further influencing the key performances such as zero bias stability of the hemispherical resonator gyroscope.
Because of the special curved surface structure of the hemispherical resonator, the traditional film preparation method aiming at the planar structure cannot meet the performance index requirements, and the traditional metal film plating process aiming at the special curved surface structure is poor in stability and mainly shows that the uniformity of the film in the curved surface is poor, the residual stress is high and the like, so that the vibration performance of the hemispherical resonator is directly influenced. For the special structure, in order to improve the performance of a plated metal film, a literature reports that a rotating mechanism is arranged to drive a hemispherical harmonic oscillator to perform planetary revolution and rotation, the rotating mechanism comprises a metal target and a revolution platform, the harmonic oscillator is arranged on the revolution platform, the position of the harmonic oscillator relative to the metal target is firstly adjusted through the revolution platform, and then the harmonic oscillator rotation and the metal target are controlled to perform magnetron sputtering film plating.
Disclosure of Invention
Aiming at the technical problem of poor plating uniformity of a harmonic oscillator film layer in the prior art, the invention provides a hemispherical harmonic oscillator metal film layer plating device and method, which are used for improving performance indexes such as uniformity of a hemispherical harmonic oscillator curved surface structure metal film layer and the like and providing powerful technical support for improving the performance of a hemispherical resonator gyroscope.
In order to solve the technical problems in the prior art, the invention provides a hemispherical resonator metal film plating device which comprises a revolution platform, a rotation mechanism and two film plating components; the rotation mechanism is arranged on the revolution platform and keeps a certain distance with the central axis of the revolution platform; the self-rotation mechanism is provided with a groove for assembling the hemispherical resonator; the two coating assemblies are arranged above the revolution platform and keep a certain distance with the central axis of the revolution platform; the two coating assemblies comprise target materials, and the target materials face the revolution platform and form an included angle with the central axis of the revolution platform; the revolution platform and the rotation mechanism simultaneously revolve and rotate, and the two coating assemblies and the central axis of the revolution platform form different angles and are matched with each other to carry out coating.
Further, the number of the rotation mechanisms is multiple, and the rotation mechanisms are uniformly distributed on the revolution platform along the circumference by taking the center of the revolution platform as the circle center.
Further, the heights from the centers of the targets of the two coating assemblies to the revolution platform are the same, and the two coating assemblies are positioned on two opposite sides of the central axis of the revolution platform.
Further, the coating assembly target material is a metal target, the coating assembly further comprises a target support and a driving mechanism, the metal target is arranged on the driving mechanism through the target support, and the driving mechanism is used for controlling the position and the inclination angle of the metal target.
Further, the coating assembly further comprises a deformable baffle, a connecting rod and a control mechanism, wherein the deformable baffle is arranged on the control mechanism through the connecting rod and is arranged in parallel relative to the metal target, the deformable baffle is of a flat plate structure with an adjustable central aperture, and the control mechanism is used for controlling the distance between the deformable baffle and the metal target and the size of the central aperture of the deformable baffle.
Further, the distance between the axis of the rotation mechanism and the central axis of the revolution platform is 20 mm-25 mm;
the two coating assemblies are a first coating assembly and a second coating assembly respectively;
the vertical distance between the center of the first metal target in the first film plating assembly and the revolution platform is 300-320 mm,The horizontal distance from the central axis of the revolution platform is 150 mm-160 mm, and the included angle theta between the first metal target and the central axis of the revolution platform 1 The adjusting range is 40-65 degrees, and the distance L between the first metal target and the first deformable baffle is the same as the distance L between the first metal target and the first deformable baffle 1 The value range is 15 mm-20 mm, and the variation range of the central aperture of the first deformable baffle is 5 mm-8 mm;
the vertical distance between the center of the second metal target in the second coating assembly and the revolution platform is 300-320 mm, the horizontal distance between the center of the second metal target in the second coating assembly and the center axis of the revolution platform is 160-180 mm, and the included angle theta between the second metal target and the center axis of the revolution platform 2 The adjusting range is 20-40 degrees, and the distance L between the second metal target and the second deformable baffle is the same as the distance L between the second metal target and the second deformable baffle 2 The value range is 15 mm-20 mm, and the change range of the central aperture of the second deformable baffle is 6 mm-10 mm.
Further, the hemispherical resonator metal film plating device is integrated in the vacuum chamber.
The invention also provides a method for plating the hemispherical harmonic oscillator metal film layer, which comprises the following steps of
Assembling a hemispherical resonator on a rotation device on a revolution platform;
adjusting the horizontal distance and the vertical distance of the targets of the two coating assemblies relative to the revolution platform;
vacuumizing the vacuum chamber to a preset vacuum degree, heating the vacuum chamber, and preserving heat after reaching a preset temperature; ar gas is filled into the vacuum chamber to a preset vacuum degree;
controlling the hemispherical harmonic oscillator to rotate and revolution;
sputtering is carried out on the two coating assemblies at the same time;
stopping filling Ar gas into the vacuum chamber, and aging the metal film layer;
and stopping heating the vacuum chamber, cooling to a preset temperature, stopping revolution and rotation of the hemispherical harmonic oscillator, stopping vacuumizing, and finishing film plating.
Further, a deformable baffle is arranged below the targets, the distance between the two targets and the deformable baffle is required to be adjusted before the vacuum chamber is vacuumized, and the film plating process is kept unchanged; in the sputtering process, the inclination angles of the targets of the two coating assemblies are continuously changed, the deformable baffles are continuously changed, and the central apertures of the two deformable baffles are respectively enlarged or reduced at constant speed.
Further, the revolution rotation speed omega of the revolution platform 2 8-10 rpm, and the rotation speed omega of the hemispherical resonator rotation mechanism 1 25-30 rpm;
the two coating assemblies are a first coating assembly and a second coating assembly respectively, and in the sputtering process, the angle theta between the metal target of the first coating assembly and the central axis of the revolution platform is the same as the angle theta of the metal target of the first coating assembly 1 The angle theta between the metal target of the second film plating component and the central axis of the revolution platform is changed from 40 DEG to 65 DEG at a constant speed 2 The angle of the deformable baffle plate in front of the metal target is changed along with the change from 40 DEG to 20 DEG at a constant speed, and the deformable baffle plate is kept parallel to the metal target; the center aperture of the deformable baffle of the first film plating assembly is changed from 5mm at a constant speed to 8mm, and the center aperture of the deformable baffle of the second film plating assembly is changed from 10mm at a constant speed to 6mm.
Compared with the prior art, the invention has the beneficial effects that:
(1) In the invention, the metal target and the harmonic oscillator are inclined at a certain angle, so that the plating uniformity of the surface film layer of the supporting column of the harmonic oscillator is ensured;
(2) The invention adopts a mode of simultaneously plating the same film material at multiple angles by adopting the bimetal targets, and the angles of the two targets and the harmonic oscillator are different, the two targets work simultaneously in the plating process, so that the occurrence of dead zones in partial areas is avoided, the plating efficiency of the plating film can be effectively improved, and the double targets are sputtered simultaneously, thereby obviously improving the performance indexes such as film compactness, film stress and the like;
(3) The physical auxiliary deformable baffle is arranged below the metal target, the center of the deformable baffle is provided with the light hole, the size of the light hole can be changed in the film plating process, and the uniformity of the film thickness in the radial direction of the inner spherical surface of the harmonic oscillator can be improved;
(4) In the invention, the harmonic oscillator adopts a planetary rotation mode, namely the harmonic oscillator is rotated around the axis of the harmonic oscillator by omega 1 Angular velocity rotates while rotating around the axis of the revolution platform at angular velocity omega 2 The revolution can further promote the improvement of the uniformity of the circumferential membrane layer.
Drawings
The accompanying drawings, which are included to provide a further understanding of embodiments of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention. It is evident that the drawings in the following description are only some embodiments of the present invention and that other drawings may be obtained from these drawings without inventive effort for a person of ordinary skill in the art.
FIG. 1 is a schematic diagram of a metal film plating apparatus for hemispherical resonators according to an embodiment of the present invention;
fig. 2 is a front view of a hemispherical resonator according to an embodiment of the present invention;
FIG. 3 is a cross-sectional view of the hemispherical resonator of FIG. 2;
fig. 4 is a schematic structural view of a deformable baffle according to an embodiment of the present invention.
Wherein the above figures include the following reference numerals:
1. a revolution platform; 2. a rotation mechanism; 31. a first metal target; 32. a first deformable barrier; 33. a first backing plate; 34. a first driving mechanism; 35. a first control mechanism; 36. a first connecting rod; 41. a second metal target; 42. a second deformable barrier; 43. a second backing plate; 44. a second driving mechanism; 45. a second control mechanism; 46. and a second connecting rod.
Detailed Description
Specific embodiments of the present invention are described in detail below. In the following description, for purposes of explanation and not limitation, specific details are set forth in order to provide a thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details.
It should be noted that, in order to avoid obscuring the present invention due to unnecessary details, only the device structures and/or processing steps closely related to the aspects of the present invention are shown in the drawings, while other details not greatly related to the present invention are omitted.
The invention provides a hemispherical harmonic oscillator metal film plating device which comprises a revolution platform, a rotation mechanism and two film plating components, wherein the revolution platform is arranged on the revolution platform; the rotation mechanism is arranged on the revolution platform and keeps a certain distance with the central axis of the revolution platform; the autorotation mechanism is provided with a groove for assembling the hemispherical harmonic oscillator; the two coating assemblies are arranged above the revolution platform and keep a certain distance with the central axis of the revolution platform; the two film plating assemblies comprise target materials, and the target materials face the revolution platform and form an included angle with the central axis of the revolution platform; the revolution platform and the rotation mechanism simultaneously revolve and rotate, and the two coating assemblies and the central axis of the revolution platform form different angles and are mutually matched for coating. The invention adopts the bimetal targets to plate the same kind of film material at multiple angles, and the angles of the two targets and the hemispherical harmonic oscillator are different, the two targets work simultaneously in the plating process, so that the occurrence of partial area blind areas is avoided, the film plating efficiency can be effectively improved, and the double targets are sputtered simultaneously, thus obviously improving the performance indexes such as film compactness, film stress and the like.
Preferably, the number of the rotation mechanisms is multiple, and the rotation mechanisms are uniformly distributed on the revolution platform along the circumference by taking the center of the revolution platform as the circle center. Through setting up a plurality of rotation mechanisms, can carry out the rete to a plurality of harmonic oscillator simultaneously and plate, improve efficiency.
Preferably, the heights from the centers of the targets of the two coating assemblies to the revolution platform are the same, and the two coating assemblies are positioned on two opposite sides of the central axis of the revolution platform. The design is convenient for the parameter design of the coating component.
Preferably, the target material of the coating assembly is a metal target, the coating assembly further comprises a target support and a driving mechanism, the metal target is arranged on the driving mechanism through the target support, and the driving mechanism is used for controlling the position and the inclination angle of the metal target. The design is convenient for flexibly adjusting the position angle of the metal target, and meets the requirement of uniform coating.
Preferably, the coating assembly further comprises a deformable baffle, a connecting rod and a control mechanism, wherein the deformable baffle is arranged on the control mechanism through the connecting rod and is arranged in parallel relative to the metal target, the deformable baffle is of a flat plate structure with an adjustable central aperture, and the control mechanism is used for controlling the distance between the deformable baffle and the metal target and the size of the central aperture of the deformable baffle. By arranging the physical auxiliary deformable baffle below the metal target and adjusting the aperture of the light holes of the deformable baffle in the film plating process, the film thickness uniformity of the inner spherical surface of the harmonic oscillator in the radial direction can be improved.
The invention also provides a method for plating the hemispherical harmonic oscillator metal film layer, which comprises the following steps:
assembling a hemispherical resonator on a rotation device on a revolution platform;
adjusting the horizontal distance and the vertical distance between the targets of the two coating assemblies and the revolution platform, wherein the coating process is kept unchanged;
vacuumizing the vacuum chamber to a preset vacuum degree, heating the vacuum chamber, and preserving heat after reaching a preset temperature; ar gas is filled into the vacuum chamber to a preset vacuum degree;
controlling the hemispherical harmonic oscillator to rotate and revolution;
sputtering is carried out on the two coating assemblies at the same time;
stopping filling Ar gas into the vacuum chamber, and aging the metal film layer;
and stopping heating the vacuum chamber, cooling to a preset temperature, stopping revolution and rotation of the hemispherical harmonic oscillator, stopping vacuumizing, and finishing film plating.
Preferably, a deformable baffle is arranged below the targets, the distance between the two targets and the deformable baffle is required to be adjusted before the vacuum chamber is vacuumized, and the film layer is kept unchanged in the plating process; in the sputtering process, the inclination angles of the targets of the two coating assemblies are continuously changed, the deformable baffles are continuously changed, and the central apertures of the two deformable baffles are respectively enlarged or reduced at constant speed. The adoption of the design can lead the film layer to be more uniform.
The invention provides a hemispherical harmonic oscillator metal film plating device, which comprises a revolution platform 1, a rotation mechanism 2 and two film plating assemblies as shown in figure 1. The revolution platform 1 is driven to rotate around the central axis by the driving mechanism, a plurality of rotation mechanisms 2 are uniformly distributed on the revolution platform 1 along the circumference, the distance from the axis of each rotation mechanism 2 to the central axis of the revolution platform 1 is the same, and the rotation mechanisms 2 are driven to rotate around the axis by the driving mechanism. The upper surface of the rotation mechanism 2 is provided with a hemispherical groove for placing a hemispherical resonator, and the axis of the hemispherical resonator is coincident with the axis of the rotation mechanism 2. The two coating assemblies are positioned on two sides of the central axis of the revolution platform 1 and face the revolution platform 1, namely, the two coating assemblies face the central axis of the revolution platform 1 relatively.
As shown in fig. 1, the first plating film assembly includes a first metal target 31, a first deformable baffle 32, a first target holder 33, a first driving mechanism 34, a first control mechanism 35, and a first connecting rod 36. The first metal target 31 is of a flat plate structure and is mounted on the first target holder 33, and the first driving mechanism 34 controls the first target holder 33 to translate and rotate in a three-dimensional space so as to drive the first metal target 31 to adjust positions and angles. The first deformable baffle 32 is a flat plate structure with an adjustable central aperture, the first deformable baffle 32 is mounted to the first control structure 35 through the first connecting rod 36, the first deformable baffle 32 is always parallel to the first metal target 31, and the first control structure 35 controls the central aperture change of the first deformable baffle 32 and the distance between the first deformable baffle and the first metal target 31 through the first connecting rod 36.
The second film plating assembly has the same structure as the first film plating assembly and comprises a second metal target 41, a second deformable baffle 42, a second target holder 43, a second driving mechanism 44, a second control mechanism 45 and a second connecting rod 46. The second metal target 41 is in a flat plate structure and is installed on the second target holder 43, and the second driving mechanism 44 controls the second target holder 43 to translate and rotate in a three-dimensional space so as to drive the second metal target 41 to adjust the position and the angle. The second deformable baffle 42 is a flat plate structure with an adjustable central aperture, the second deformable baffle 42 is mounted to the second control structure 45 through the second connecting rod 46, the second deformable baffle 42 is always parallel to the second metal target 41, and the second control structure 45 controls the central aperture change of the second deformable baffle 42 and the distance between the second deformable baffle and the second metal target 41 through the second connecting rod 46.
The first driving mechanism 34 and the second driving mechanism 44 can adopt a gear set structure controlled by a motor, so that the position and the angle of the metal target can be flexibly adjusted.
The hemispherical harmonic oscillator metal film plating device is integrated in a vacuum chamber of a conventional magnetron sputtering coating.
Aiming at harmonic oscillators with the diameter range of 20-35 mm, the invention designs key parameters of a metal film plating device in detail:
(1) The distance between the rotation axis of the hemispherical resonator autorotation mechanism 2 and the central axis of the revolution platform is 20 mm-25 mm.
(2) The vertical distance between the centers of the first metal target and the second metal target and the revolution platform is the same, and the value range is 300-320 mm. The centers of the first metal target and the second metal target are positioned in a horizontal plane, the center axis of the revolution platform is used as the center of a circle, and the angle between the centers is 180 degrees. The horizontal distance between the center of the first metal target and the central axis of the revolution platform is 150-160 mm, and the horizontal distance between the center of the second metal target and the central axis of the revolution platform is 160-180 mm. By adopting the metal target position parameters, the harmonic oscillator can be positioned in the sputtering effective area of the target and the coupling sputtering area between the two targets.
(3) The first metal target and the second metal target face the center of the revolution platform and respectively have angles theta with the central axis of the revolution platform 1 、θ 2 ，θ 1 、θ 2 Is regulated in the process of plating a metal film layer, wherein, theta 1 The adjusting range is 40-65 degrees and theta 2 The adjusting range is 20-40 degrees. The design ensures that the metal target and the harmonic oscillator incline at a certain angle, and ensures the plating uniformity of the surface film layer of the supporting column of the harmonic oscillator.
(4) The first deformable baffle plate is arranged in parallel with the first metal target, and the distance between the first deformable baffle plate and the first metal target is L 1 ，L 1 The settable range is 15 mm-20 mm, the second deformable baffle is arranged in parallel with the second metal target, and the distance between the second deformable baffle and the second metal target is L 2 ，L 2 The setting range is 15 mm-20 mm. The aperture of the central light holes of the first deformable baffle and the second deformable baffle need to be changed in the film plating process, the aperture change range of the light holes of the first deformable baffle is 5-8 mm, and the aperture change range of the light holes of the second deformable baffle is 6-10 mm. By arranging the physical auxiliary deformable baffle below the metal target and adjusting the aperture of the light holes of the deformable baffle in the film plating process, the radial direction of the inner spherical surface of the harmonic oscillator can be improvedUniformity of film thickness.
The invention provides a metal film plating method of a hemispherical resonator, which comprises the following steps:
(1) Placing the hemispherical resonator on a hemispherical resonator autorotation mechanism;
(2) Adjusting the distance between the first metal target and the first deformable barrier, e.g. L 1 Adjusting the thickness to 15mm;
adjusting the distance between the second metal target and the second deformable barrier, e.g. L 2 Adjusting to 20mm;
(3) Adjusting the horizontal distance between the centers of the first metal target and the second metal target from the central axis of the revolution platform, for example, the horizontal distance between the center of the first metal target and the central axis of the revolution platform is adjusted to 150mm, and the horizontal distance between the center of the second metal target and the central axis of the revolution platform is adjusted to 180mm; adjusting the vertical distance between the centers of the first metal target and the second metal target and the revolution platform, for example, the vertical distance between the centers of the first metal target and the second metal target and the revolution platform is 300mm;
(4) The vacuum degree in the magnetron sputtering coating vacuum chamber is pumped to be not more than 3 multiplied by 10 -3 Pa；
(5) Opening a heating and baking switch in the magnetron sputtering coating vacuum chamber, and adjusting the temperature in the chamber to be between 250 and 270 ℃; after the baking temperature reaches the requirement, preserving heat (10-30) for a minute;
(6) Rotating motor control switch for opening revolution platform and hemispherical harmonic oscillator rotation mechanism to control revolution rotation speed omega of revolution platform 2 At (8-10) rpm, the rotation speed omega of the hemispherical resonator autorotation mechanism 1 Is (25-30) rpm;
(7) And (3) inflation: to a vacuum degree of not more than 3 x 10 -3 Ar gas can be filled in the Pa; the vacuum degree is controlled to be (3.4-3.7) multiplied by 10 by adjusting the air charging flow -1 Between Pa;
(8) Plating a metal film layer: simultaneously switching on power supplies of the first metal target and the second metal target, setting sputtering current to be 3.5A-4.5A, and setting plating time to be 600s (specific time can be set according to film thickness requirements); after the sputtering program starts to execute, the first metal target is adjustedAngle of the second metal target, e.g. angle θ of the first metal target 1 Gradually changing from 40 DEG to 65 DEG, the angle theta of the second metal target 2 The angle of the deformable baffle plate in front of the metal target is correspondingly changed along with the uniform change of the angle in the plating time range; in the sputtering process, the aperture of the light hole of the first deformable baffle plate is gradually changed from 5mm to 8mm, the change rate is set according to the plating time, the uniform change of the aperture in the plating time range is ensured to be completed, the aperture of the light hole of the second deformable baffle plate is gradually changed from 10mm to 6mm, and the change rate is set according to the plating time, the uniform change of the aperture in the plating time range is ensured to be completed; and after sputtering is finished, the power supply of the metal target is turned off at the same time.
(9) Aging the metal film: closing Ar gas source until vacuum degree is recovered to be not more than 3 multiplied by 10 -3 Pa, aging the substrate at the temperature for 30min, and closing a baking switch;
(10) When the temperature is reduced to below 50 ℃, the rotary motor control switches of the revolution platform and the hemispherical harmonic oscillator autorotation mechanism are closed, the power supply of the vacuum pump is closed, after the vacuum pump is completely stopped, the air release valve is started, the vacuum chamber door is opened, and the hemispherical harmonic oscillator is taken out for a second time, so that the film plating is completed.
According to the invention, through the design of the double target positions and the deformable baffle plates, the requirement on setting of revolution and rotation parameters of the harmonic oscillator is reduced, and the uniformity of plating of the ultrathin metal film layer can be obviously improved by improving the rotation speed of the rotation mechanism.
Features that are described and/or illustrated above with respect to one embodiment may be used in the same way or in a similar way in one or more other embodiments and/or in combination with or instead of the features of the other embodiments.
It should be emphasized that the term "comprises/comprising" when used herein is taken to specify the presence of stated features, integers, steps or components but does not preclude the presence or addition of one or more other features, integers, steps, components or groups thereof.
The many features and advantages of the embodiments are apparent from the detailed specification, and thus, it is intended by the appended claims to cover all such features and advantages of the embodiments which fall within the true spirit and scope thereof. Further, since numerous modifications and changes will readily occur to those skilled in the art, it is not desired to limit the embodiments of the invention to the exact construction and operation illustrated and described, and accordingly, all suitable modifications and equivalents may be resorted to, falling within the scope thereof.
The above description is only of the preferred embodiments of the present invention and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
The invention is not described in detail in a manner known to those skilled in the art.
Claims (3)
1. The hemispherical resonator metal film plating method is characterized by adopting a hemispherical resonator metal film plating device, wherein the hemispherical resonator metal film plating device comprises a revolution platform, a rotation mechanism and two film plating components; the rotation mechanism is arranged on the revolution platform and keeps a certain distance with the central axis of the revolution platform; the self-rotation mechanism is provided with a groove for assembling the hemispherical resonator; the two coating assemblies are arranged above the revolution platform and keep a certain distance with the central axis of the revolution platform; the two coating assemblies comprise target materials, and the target materials face the revolution platform and form an included angle with the central axis of the revolution platform; the revolution platform and the rotation mechanism simultaneously revolve and rotate, and the two coating assemblies and the central axis of the revolution platform form different angles and are mutually matched for coating; the coating assembly further comprises a target support and a driving mechanism, wherein the target material is arranged on the driving mechanism through the target support, the target material of the coating assembly is a metal target, and the driving mechanism is used for controlling the position and the inclination angle of the metal target;
the coating assembly further comprises a deformable baffle, a connecting rod and a control mechanism, wherein the deformable baffle is arranged on the control mechanism through the connecting rod and is arranged in parallel relative to the metal target, the deformable baffle is of a flat plate structure with an adjustable central aperture, and the control mechanism is used for controlling the distance between the deformable baffle and the metal target and the size of the central aperture of the deformable baffle;
the distance between the axis of the rotation mechanism and the central axis of the revolution platform is 20 mm-25 mm; the two coating assemblies are a first coating assembly and a second coating assembly respectively; the vertical distance between the center of the first metal target in the first film plating assembly and the revolution platform is 300-320 mm, the horizontal distance between the center of the first metal target in the first film plating assembly and the center axis of the revolution platform is 150-160 mm, and the included angle theta between the first metal target and the center axis of the revolution platform 1 The adjusting range is 40-65 degrees, and the distance L between the first metal target and the first deformable baffle is the same as the distance L between the first metal target and the first deformable baffle 1 The value range is 15 mm-20 mm, and the variation range of the central aperture of the first deformable baffle is 5 mm-8 mm; the vertical distance between the center of the second metal target in the second coating assembly and the revolution platform is 300-320 mm, the horizontal distance between the center of the second metal target in the second coating assembly and the center axis of the revolution platform is 160-180 mm, and the included angle theta between the second metal target and the center axis of the revolution platform 2 The adjusting range is 20-40 degrees, and the distance L between the second metal target and the second deformable baffle is the same as the distance L between the second metal target and the second deformable baffle 2 The value range is 15 mm-20 mm, and the change range of the central aperture of the second deformable baffle is 6 mm-10 mm;
the hemispherical resonator metal film plating device is integrated in the vacuum chamber;
the plating method of the hemispherical resonator metal film layer comprises the following steps of
Assembling a hemispherical harmonic oscillator on a rotation device on a revolution platform, wherein the diameter range of the hemispherical harmonic oscillator is 20-35 mm;
adjusting the horizontal distance and the vertical distance of the targets of the two coating assemblies relative to the revolution platform;
vacuumizing the vacuum chamber to a preset vacuum degree, heating the vacuum chamber, and preserving heat after reaching a preset temperature; ar gas is filled into the vacuum chamber to a preset vacuum degree;
controlling the hemispherical harmonic oscillator to rotate and revolution;
sputtering is carried out on the two coating assemblies at the same time;
stopping filling Ar gas into the vacuum chamber, and aging the metal film layer;
stopping heating the vacuum chamber, cooling to a preset temperature, stopping revolution and autorotation of the hemispherical harmonic oscillator, stopping vacuumizing, and finishing film plating;
a deformable baffle is arranged below the targets, the distance between the two targets and the deformable baffle is required to be adjusted before the vacuum chamber is vacuumized, and the film layer is kept unchanged in the plating process; in the sputtering process, the inclination angles of targets of the two film plating assemblies are continuously changed, the angle theta 1 between the metal target of the first film plating assembly and the central axis of the revolution platform is changed from 40 DEG to 65 DEG at a constant speed, the angle theta 2 between the metal target of the second film plating assembly and the central axis of the revolution platform is changed from 40 DEG to 20 DEG at a constant speed, and the angle of the deformable baffle plate in front of the metal target is continuously changed and is parallel to the metal target; the central aperture of the deformable baffle of the first film plating assembly is enlarged at a constant speed and changed from 5mm to 8mm, the central aperture of the deformable baffle of the second film plating assembly is reduced at a constant speed and changed from 10mm to 6mm, so that the plated film layer is more uniform;
revolution speed omega of the revolution platform 2 8-10 rpm, and the rotation speed omega of the hemispherical resonator rotation mechanism 1 25 to 30rpm.
2. The method for plating a metal film layer of a hemispherical resonator according to claim 1, wherein a plurality of the rotation mechanisms are uniformly distributed on the revolution platform along the circumference by taking the center of the revolution platform as the center of the circle.
3. The method for plating a metal film layer of a hemispherical resonator according to claim 1, wherein the heights from the centers of the targets of the two film plating assemblies to the revolution platform are the same, and the two film plating assemblies are positioned on two opposite sides of the central axis of the revolution platform.
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| CN115369370A (en) * | 2022-08-19 | 2022-11-22 | 中国科学院上海光学精密机械研究所 | Hemisphere harmonic oscillator metallization coating anchor clamps controlling means |
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| KR20110135234A (en) * | 2010-06-10 | 2011-12-16 | 국방과학연구소 | Method and apparatus for thin metal film deposition on a hemisperical resonator |
| KR20170034703A (en) * | 2015-09-21 | 2017-03-29 | 국방과학연구소 | Method and apparatus for thin metal film deposition on a hemisperical resonator |
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| KR20110135234A (en) * | 2010-06-10 | 2011-12-16 | 국방과학연구소 | Method and apparatus for thin metal film deposition on a hemisperical resonator |
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