CN113913773A - Hemispherical harmonic oscillator metal film coating device and method - Google Patents
Hemispherical harmonic oscillator metal film coating device and method Download PDFInfo
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- 239000002184 metal Substances 0.000 title claims abstract description 136
- 238000000034 method Methods 0.000 title claims abstract description 30
- 239000007888 film coating Substances 0.000 title claims description 22
- 238000009501 film coating Methods 0.000 title claims description 22
- 238000000576 coating method Methods 0.000 claims abstract description 91
- 239000011248 coating agent Substances 0.000 claims abstract description 89
- 230000007246 mechanism Effects 0.000 claims abstract description 72
- 238000000429 assembly Methods 0.000 claims abstract description 38
- 230000000712 assembly Effects 0.000 claims abstract description 38
- 238000007747 plating Methods 0.000 claims abstract description 32
- 238000004544 sputter deposition Methods 0.000 claims abstract description 17
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- 230000008859 change Effects 0.000 claims description 10
- 239000013077 target material Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- 230000032683 aging Effects 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 4
- 239000000306 component Substances 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000006872 improvement Effects 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- 239000005350 fused silica glass Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
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Abstract
The invention provides a device and a method for plating a metal film layer of a hemispherical harmonic oscillator, wherein the plating device comprises a revolution platform, a rotation mechanism and two plating assemblies; the rotation mechanism is arranged on the revolution platform and keeps a certain distance with the central axis of the revolution platform; the autorotation mechanism is provided with a groove for assembling the hemispherical harmonic oscillator; the two coating assemblies are arranged above the revolution platform and keep a certain distance with the central axis of the revolution platform; the two coating assemblies respectively comprise a target, and the target faces the revolution platform and forms an included angle with the central axis of the revolution platform; the revolution platform and the rotation mechanism simultaneously carry out revolution and rotation, and the two coating assemblies form different angles with the central axis of the revolution platform and are mutually matched for coating. The invention adopts the double-metal target to plate the same kind of film material at multiple angles, the angles of the two targets and the harmonic oscillator are different, the blind zone is avoided, the film plating efficiency can be effectively improved, and in addition, the double-target sputtering simultaneously improves the performance indexes such as film compactness, film stress and the like.
Description
Technical Field
The invention relates to the technical field of harmonic oscillator manufacturing, in particular to a metal film coating device and a metal film coating method for a hemispherical harmonic oscillator as a core component of a hemispherical resonator gyroscope, which are applied to coating of a metal conductive film layer of the hemispherical harmonic oscillator.
Background
The hemispherical resonator gyroscope is a novel vibratory gyroscope for sensing the rotation of a base by utilizing the standing wave precession effect of a hemispherical resonator, a vibration sensitive part of the vibratory gyroscope is the hemispherical resonator, the hemispherical resonator is made of fused quartz material and has no conductivity, and in order to realize capacitive vibration excitation and signal detection, the metallization of the resonator is required to be realized by depositing a metal conductive film layer on the surface of the resonator. The metal film coating of the hemispherical harmonic oscillator is an important link in the manufacturing process of the harmonic oscillator, and the performance of the hemispherical harmonic oscillator directly has a decisive influence on the quality of the harmonic oscillator, so that the zero bias stability and other key performances of the hemispherical resonant gyroscope are further influenced.
Because of the special curved surface structure of the hemispherical harmonic oscillator, the traditional film preparation method aiming at the plane structure can not meet the performance index requirements, and the process stability of the existing metal film coating aiming at the special curved surface structure is poor, mainly reflected by poor uniformity of a curved surface inner film layer, high residual stress and the like, and the vibration performance of the hemispherical harmonic oscillator is directly influenced. Aiming at the special structure, in order to improve the performance of a plated metal film layer, a rotating mechanism is arranged to drive a hemispherical resonator to perform planetary revolution and rotation, the rotating mechanism comprises a metal target and a revolution platform, the resonator is arranged on the revolution platform, the position of the resonator relative to the metal target is adjusted through the revolution platform, then the rotation of the resonator and the magnetron sputtering coating of the metal target are controlled, special process equipment needs to be customized, the improvement of the uniformity performance of the coating is limited, the setting of parameters such as revolution and rotation speed is complex, and the coating is performed by simply depending on the rotation of the hemispherical resonator, so that the uniformity of the metal film layer cannot be effectively improved.
Disclosure of Invention
Aiming at the technical problem of poor coating uniformity of a harmonic oscillator film layer in the prior art, the invention provides a device and a method for coating a metal film layer of a hemispherical harmonic oscillator, so as to improve performance indexes such as uniformity of the metal film layer of a curved surface structure of the hemispherical harmonic oscillator and provide powerful technical support for improving the performance of the hemispherical resonant gyroscope.
In order to solve the technical problems in the prior art, the invention provides a metal film coating device for a hemispherical harmonic oscillator, which comprises a revolution platform, a rotation mechanism and two coating assemblies; the rotation mechanism is arranged on the revolution platform and keeps a certain distance with the central axis of the revolution platform; the autorotation mechanism is provided with a groove for assembling the hemispherical harmonic oscillator; the two coating assemblies are arranged above the revolution platform and keep a certain distance with the central axis of the revolution platform; the two coating assemblies respectively comprise a target, and the target faces the revolution platform and forms an included angle with the central axis of the revolution platform; the revolution platform and the rotation mechanism simultaneously carry out revolution and rotation, and the two coating assemblies and the central axis of the revolution platform form different angles and are matched with each other for coating.
Furthermore, a plurality of rotation mechanisms are arranged on the revolution platform uniformly along the circumference by taking the center of the revolution platform as the circle center.
Furthermore, the heights from the centers of the target materials of the two coating assemblies to the revolution platform are the same, and the two coating assemblies are positioned on two opposite sides of the central axis of the revolution platform.
Further, the target material of the coating assembly is a metal target, the coating assembly further comprises a target holder and a driving mechanism, the metal target is mounted on the driving mechanism through the target holder, and the driving mechanism is used for controlling the position and the inclination angle of the metal target.
The coating assembly further comprises a deformable baffle, a connecting rod and a control mechanism, wherein the deformable baffle is mounted on the control mechanism through the connecting rod and is arranged in parallel relative to the metal target, the deformable baffle is of a flat plate structure with an adjustable central aperture, and the control mechanism is used for controlling the distance between the deformable baffle and the metal target and the size of the central aperture of the deformable baffle.
Furthermore, the distance between the axis of the rotation mechanism and the central axis of the revolution platform is 20 mm-25 mm;
the two coating assemblies are respectively a first coating assembly and a second coating assembly;
the vertical distance from the center of the first metal target in the first film coating assembly to the revolution platform is 300-320 mm, the horizontal distance from the center axis of the revolution platform is 150-160 mm, and the included angle theta between the first metal target and the center axis of the revolution platform is1The adjusting range is 40-65 degrees, and the distance L between the first metal target and the first deformable baffle plate1The value range is 15 mm-20 mm, and the change range of the central aperture of the first deformable baffle is 5 mm-8 mm;
the vertical distance from the center of a second metal target in the second coating component to the revolution platform is 300-320 mm, the horizontal distance from the center axis of the revolution platform is 160-180 mm, and the included angle theta between the second metal target and the center axis of the revolution platform is2The adjusting range is 20 degrees to 40 degrees, and the distance L between the second metal target and the second deformable baffle plate2The value range is 15 mm-20 mm, and the change range of the central aperture of the second deformable baffle is 6 mm-10 mm.
Furthermore, the hemispherical harmonic oscillator metal film layer coating device is integrated in a vacuum chamber.
The invention also provides a method for plating the metal film layer of the hemispherical harmonic oscillator, which comprises the following steps
Assembling the hemispherical harmonic oscillator on a rotation device on the revolution platform;
adjusting the horizontal distance and the vertical distance of the target materials of the two coating assemblies relative to the revolution platform;
after the vacuum chamber is vacuumized to a preset vacuum degree, heating the vacuum chamber in the vacuum chamber, and preserving heat after the preset temperature is reached; filling Ar gas into the vacuum chamber to a preset vacuum degree;
controlling the hemispherical harmonic oscillator to perform revolution and autorotation;
sputtering the two coating assemblies simultaneously;
stopping filling Ar gas into the vacuum chamber, and aging the metal film layer;
and (4) stopping heating the vacuum chamber, cooling to a preset temperature, stopping revolution and rotation of the hemispherical harmonic oscillator, and stopping vacuumizing to finish film coating.
Furthermore, deformable baffles are arranged below the targets, the distance between the two targets and the deformable baffles is required to be adjusted before the vacuum chamber is vacuumized, and the distance is kept unchanged in the film coating process; in the sputtering process, the inclination angles of the targets of the two coating assemblies are continuously changed, the deformable baffles are continuously changed along with the inclination angles, and meanwhile, the central apertures of the two deformable baffles are respectively enlarged or reduced at a constant speed.
Further, the revolution speed omega of the revolution platform28-10 rpm, and the rotation speed omega of the hemispherical harmonic oscillator rotation mechanism125-30 rpm;
the two coating assemblies are respectively a first coating assembly and a second coating assembly, and in the sputtering process, the angle theta between the metal target of the first coating assembly and the central axis of the revolution platform is1The uniform speed of the second coating component is changed from 40 degrees to 65 degrees, and the angle theta between the metal target of the second coating component and the central axis of the revolution platform2The uniform speed is changed from 40 degrees to 20 degrees, and the angle of the deformable baffle in front of the metal target is changed along with the uniform speed and is kept parallel to the metal target; the central aperture of the deformable baffle of the first coating assembly is changed from 5mm to 8mm at a constant speed, and the central aperture of the deformable baffle of the second coating assembly is changed from 10mm to 6mm at a constant speed.
Compared with the prior art, the invention has the beneficial effects that:
(1) the metal target and the harmonic oscillator are inclined at a certain angle, so that the coating uniformity of a film layer on the surface of the harmonic oscillator supporting column is ensured;
(2) the method adopts a mode of simultaneously plating the same kind of film layer materials at multiple angles by the double metal targets, and the angles of the two targets are different from those of the harmonic oscillator, so that the two targets work simultaneously in the plating process, the occurrence of partial region blind areas is avoided, the plating efficiency of the plated film can be effectively improved, and the performance indexes of film layer compactness, film layer stress and the like are obviously improved by the simultaneous sputtering of the double targets;
(3) according to the invention, the physically-assisted deformable baffle is arranged below the metal target, the center of the deformable baffle is provided with the light hole, the size of the light hole can be changed in the film coating process, and the film thickness uniformity of the harmonic oscillator in the radial direction of the inner spherical surface can be improved;
(4) the harmonic oscillator adopts a planetary rotation mode, namely the harmonic oscillator rotates around the axis of the harmonic oscillator by omega1Rotating at angular speed and rotating at angular speed omega around the axis of the revolution platform2The revolution can further promote the improvement of the uniformity of the circumferential film layer.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention. It is obvious that the drawings in the following description are only some embodiments of the invention, and that for a person skilled in the art, other drawings can be derived from them without inventive effort.
Fig. 1 is a schematic structural diagram of a hemispherical resonator metal film layer plating apparatus according to an embodiment of the present invention;
fig. 2 is a front view of a hemispherical resonator provided in an embodiment of the present invention;
fig. 3 is a cross-sectional view of the hemispherical resonator in fig. 2;
fig. 4 is a schematic structural diagram of a deformable baffle according to an embodiment of the present invention.
Wherein the figures include the following reference numerals:
1. a revolution platform; 2. a rotation mechanism; 31. a first metal target; 32. a first deformable baffle; 33. a first target holder; 34. a first drive mechanism; 35. a first control mechanism; 36. a first connecting rod; 41. a second metal target; 42. a second deformable baffle; 43. a second target holder; 44. a second drive mechanism; 45. a second control mechanism; 46. a second connecting rod.
Detailed Description
The following provides a detailed description of specific embodiments of the present invention. In the following description, for purposes of explanation and not limitation, specific details are set forth in order to provide a thorough understanding of the present invention. However, it will be apparent to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details.
It should be noted that, in order to avoid obscuring the present invention with unnecessary details, only the device structures and/or processing steps closely related to the scheme of the present invention are shown in the drawings, and other details not so related to the present invention are omitted.
The invention provides a metal film coating device for a hemispherical harmonic oscillator, which comprises a revolution platform, a rotation mechanism and two coating assemblies; the rotation mechanism is arranged on the revolution platform and keeps a certain distance with the central axis of the revolution platform; the autorotation mechanism is provided with a groove for assembling the hemispherical harmonic oscillator; the two coating assemblies are arranged above the revolution platform and keep a certain distance with the central axis of the revolution platform; the two coating assemblies respectively comprise a target, and the target faces the revolution platform and forms an included angle with the central axis of the revolution platform; the revolution platform and the rotation mechanism simultaneously carry out revolution and rotation, and the two coating assemblies form different angles with the central axis of the revolution platform and are mutually matched for coating. The invention adopts the double metal targets to plate the same kind of film material at multiple angles, and the two targets and the hemispherical harmonic oscillator have different angles, the two targets work simultaneously in the plating process, the occurrence of partial area blind areas is avoided, the film plating efficiency can be effectively improved, and the performance indexes of film compactness, film stress and the like are obviously improved by the simultaneous sputtering of the double targets.
Preferably, the rotation mechanisms are multiple and are uniformly distributed on the revolution platform along the circumference by taking the center of the revolution platform as the circle center. By arranging the plurality of autorotation mechanisms, the plurality of harmonic oscillators can be coated with films at the same time, and the efficiency is improved.
Preferably, the heights from the centers of the targets of the two coating assemblies to the revolution platform are the same, and the two coating assemblies are positioned on two opposite sides of the central axis of the revolution platform. The design is convenient for the parameter design of the coating assembly.
Preferably, the target material of the coating assembly is a metal target, the coating assembly further comprises a target holder and a driving mechanism, the metal target is mounted on the driving mechanism through the target holder, and the driving mechanism is used for controlling the position and the inclination angle of the metal target. The design is convenient for flexibly adjusting the position and the angle of the metal target and meets the requirement of uniform coating.
Preferably, the coating assembly further comprises a deformable baffle, a connecting rod and a control mechanism, the deformable baffle is mounted on the control mechanism through the connecting rod and is arranged in parallel relative to the metal target, the deformable baffle is of a flat plate structure with an adjustable central aperture, and the control mechanism is used for controlling the distance between the deformable baffle and the metal target and the size of the central aperture of the deformable baffle. Through set up the supplementary deformable baffle of physics below the metal target, the adjustable baffle light trap aperture is adjusted to the rete in-process of plating, can promote the membrane thickness homogeneity of the interior sphere radial direction of harmonic oscillator.
The invention also provides a plating method of the metal film layer of the hemispherical harmonic oscillator, which comprises the following steps:
assembling the hemispherical harmonic oscillator on a rotation device on the revolution platform;
adjusting the horizontal distance and the vertical distance of the target materials of the two coating assemblies relative to the revolution platform, wherein the coating process of the film layer is kept unchanged;
after the vacuum chamber is vacuumized to a preset vacuum degree, heating the vacuum chamber in the vacuum chamber, and preserving heat after the preset temperature is reached; filling Ar gas into the vacuum chamber to a preset vacuum degree;
controlling the hemispherical harmonic oscillator to perform revolution and autorotation;
sputtering the two coating assemblies simultaneously;
stopping filling Ar gas into the vacuum chamber, and aging the metal film layer;
and (4) stopping heating the vacuum chamber, cooling to a preset temperature, stopping revolution and rotation of the hemispherical harmonic oscillator, and stopping vacuumizing to finish film coating.
Preferably, the deformable baffle is arranged below the targets, the distance between the two targets and the deformable baffle is required to be adjusted before the vacuum chamber is vacuumized, and the film layer is kept unchanged in the coating process; in the sputtering process, the inclination angles of the targets of the two coating assemblies are continuously changed, the deformable baffles are continuously changed along with the inclination angles, and meanwhile, the central apertures of the two deformable baffles are respectively enlarged or reduced at a constant speed. The film layer can be more uniform by adopting the design.
The invention provides a metal film coating device for a hemispherical harmonic oscillator, which comprises a revolution platform 1, a rotation mechanism 2 and two coating assemblies as shown in figure 1. The revolution platform 1 is driven by the driving mechanism to rotate around the central axis, a plurality of rotation mechanisms 2 are uniformly distributed on the revolution platform 1 along the circumference, the distance from the axis of each rotation mechanism 2 to the central axis of the revolution platform 1 is the same, and the rotation mechanisms 2 are driven by the driving mechanism to rotate around the axes of the rotation mechanisms. The upper surface of the rotation mechanism 2 is provided with a hemispherical groove for placing a hemispherical harmonic oscillator, and the axis of the hemispherical harmonic oscillator is coincided with the axis of the rotation mechanism 2. The two coating assemblies are positioned on two sides of the central axis of the revolution platform 1 and face the revolution platform 1, namely the two coating assemblies face the central axis of the revolution platform 1 relatively.
As shown in fig. 1, the first coating assembly includes a first metal target 31, a first deformable baffle 32, a first backing plate 33, a first driving mechanism 34, a first control mechanism 35, and a first connecting rod 36. The first metal target 31 is a flat plate structure and is mounted on the first target holder 33, and the first driving mechanism 34 controls the first target holder 33 to translate and rotate in a three-dimensional space to drive the first metal target 31 to adjust the position and the angle. The first deformable baffle 32 is a flat plate structure with an adjustable central aperture, the first deformable baffle 32 is mounted to a first control structure 35 through a first connecting rod 36, the first deformable baffle 32 and the first metal target 31 are always kept parallel, and the first control structure 35 controls the central aperture of the first deformable baffle 32 to be changed and the distance between the first deformable baffle 32 and the first metal target 31 through the first connecting rod 36.
The second coating assembly has the same structure as the first coating assembly, and comprises a second metal target 41, a second deformable baffle plate 42, a second target holder 43, a second driving mechanism 44, a second control mechanism 45 and a second connecting rod 46. The second metal target 41 is a flat plate structure and is mounted on the second target holder 43, and the second driving mechanism 44 controls the second target holder 43 to translate and rotate in a three-dimensional space to drive the second metal target 41 to adjust the position and the angle. The second deformable baffle 42 is a flat plate structure with an adjustable central aperture, the second deformable baffle 42 is mounted to a second control structure 45 through a second connecting rod 46, the second deformable baffle 42 is always parallel to the second metal target 41, and the second control structure 45 controls the central aperture of the second deformable baffle 42 and the distance between the second deformable baffle 42 and the second metal target 41 through the second connecting rod 46.
The first driving mechanism 34 and the second driving mechanism 44 can adopt a gear set structure controlled by a motor, and the position and the angle of the metal target can be flexibly adjusted.
The hemispherical harmonic oscillator metal film layer coating device is integrated in a vacuum chamber of the conventional magnetron sputtering coating.
Aiming at the harmonic oscillator with the diameter range of 20 mm-35 mm, the invention designs the key parameters of the metal film coating device in detail:
(1) the distance between the rotation axis of the hemispherical harmonic oscillator rotation mechanism 2 and the central axis of the revolution platform is 20 mm-25 mm.
(2) The vertical distances from the centers of the first metal target and the second metal target to the revolution platform are the same, and the value range is 300-320 mm. The center of the first metal target and the center of the second metal target are located in a horizontal plane, the central axis of the revolution platform is used as the circle center, and the angle between the first metal target and the second metal target is 180 degrees. The horizontal distance from the center of the first metal target to the central axis of the revolution platform is 150 mm-160 mm, and the horizontal distance from the center of the second metal target to the central axis of the revolution platform is 160 mm-180 mm. By adopting the metal target position parameters, the harmonic oscillator can be positioned in the sputtering effective area of the target material and the coupling sputtering area between the two targets.
(3) The first metal target and the second metal target face the center of the revolution platform, and the angles between the first metal target and the second metal target and the central axis of the revolution platform are theta1、θ2，θ1、θ2Adjusting in the process of plating metal film layerSection in which theta1The adjusting range is 40-65 degrees theta2The adjusting range is 20-40 degrees. The design ensures that the metal target and the harmonic oscillator are inclined at a certain angle, and ensures the coating uniformity of the surface film layer of the harmonic oscillator support column.
(4) The first deformable baffle and the first metal target are arranged in parallel, and the distance between the first deformable baffle and the first metal target is L1，L1The settable range is 15 mm-20 mm, the second deformable baffle is arranged in parallel with the second metal target, and the distance between the second deformable baffle and the second metal target is L2，L2The setting range is 15 mm-20 mm. The central light hole aperture of first, second deformable baffle needs to change at the rete plating in-process, and the light hole aperture range of change of first deformable baffle is 5mm ~ 8mm, and the light hole aperture range of change of second deformable baffle is 6mm ~ 10 mm. Through set up the supplementary deformable baffle of physics below the metal target, the adjustable baffle light trap aperture is adjusted to the rete in-process of plating, can promote the membrane thickness homogeneity of the interior sphere radial direction of harmonic oscillator.
The invention provides a method for plating a metal film layer of a hemispherical harmonic oscillator, which comprises the following steps:
(1) placing the hemispherical harmonic oscillator on a hemispherical harmonic oscillator rotation mechanism;
(2) adjusting the distance, e.g. L, between the first metal target and the first deformable baffle1Adjusting the thickness to 15 mm;
adjusting the distance, e.g. L, between the second metal target and the second deformable barrier2Adjusting the thickness to 20 mm;
(3) adjusting the horizontal distance between the center of the first metal target and the center of the second metal target and the central axis of the revolution platform, for example, the horizontal distance between the center of the first metal target and the central axis of the revolution platform is adjusted to be 150mm, and the horizontal distance between the center of the second metal target and the central axis of the revolution platform is adjusted to be 180 mm; adjusting the vertical distance between the centers of the first metal target and the second metal target and the revolution platform, for example, the vertical distance between the centers of the first metal target and the second metal target and the revolution platform is 300 mm;
(4) pumping the vacuum degree in the magnetron sputtering coating vacuum chamber to be not more than 3 multiplied by 10-3Pa；
(5) Opening a heating baking switch in the magnetron sputtering coating vacuum chamber, and adjusting the temperature in the chamber to be 250-270 ℃; after the baking temperature meets the requirement, preserving the heat for 10-30 min;
(6) opening the control switch of the rotary motor of the revolution platform and the rotation mechanism of the hemispherical harmonic oscillator to control the revolution speed omega of the revolution platform2Is (8-10) rpm, and the rotating speed omega of the hemispherical harmonic oscillator rotation mechanism1(25-30) rpm;
(7) and (3) inflating: pumping to a vacuum degree of not more than 3 × 10-3When Pa, Ar gas can be filled; the vacuum degree is controlled to be (3.4-3.7) multiplied by 10 by adjusting the aeration flow-1Pa;
(8) plating a metal film layer: simultaneously switching on power supplies of the first metal target and the second metal target, setting sputtering current to be 3.5-4.5A, and setting plating time to be 600s (the specific time can be set according to the requirement of film thickness); after the sputtering process is started, the angles of the first metal target and the second metal target are adjusted, for example, the angle theta of the first metal target1Gradually changing from 40 degrees to 65 degrees, and the angle theta of the second metal target2Gradually changing from 40 degrees to 20 degrees, setting the change rate according to the plating time, ensuring that the angle in the plating time range is uniformly changed, and correspondingly, the angle of the deformable baffle in front of the metal target is changed; in the sputtering process, the aperture of the light hole of the first deformable baffle is gradually changed from 5mm to 8mm, the change rate is set according to the plating time, the aperture is ensured to be uniformly changed within the plating time range, the aperture of the light hole of the second deformable baffle is gradually changed from 10mm to 6mm, and the change rate is set according to the plating time, so that the aperture is ensured to be uniformly changed within the plating time range; and after the sputtering is finished, simultaneously turning off the power supply of the metal target.
(9) Aging of the metal film layer: closing Ar gas source, and recovering vacuum degree to be not more than 3 multiplied by 10-3Pa, aging the substrate for 30min at the temperature, and then closing a baking switch;
(10) when the temperature is reduced to below 50 ℃, the control switches of the rotating motors of the revolution platform and the hemispherical harmonic oscillator rotation mechanism are closed, the power supply of the vacuum pump is closed, after the revolution platform and the hemispherical harmonic oscillator rotation mechanism completely stop rotating, the air release valve is started, the door of the vacuum chamber is opened, the hemispherical harmonic oscillator is taken out again, and the film coating is finished.
The invention reduces the requirement for the setting of revolution and rotation parameters of the harmonic oscillator by the design of double target positions and the deformable baffle, and can obviously improve the plating uniformity of the ultrathin metal film layer by improving the rotation rate of the rotation mechanism.
Features that are described and/or illustrated above with respect to one embodiment may be used in the same way or in a similar way in one or more other embodiments and/or in combination with or instead of the features of the other embodiments.
It should be emphasized that the term "comprises/comprising" when used herein, is taken to specify the presence of stated features, integers, steps or components but does not preclude the presence or addition of one or more other features, integers, steps, components or groups thereof.
The many features and advantages of these embodiments are apparent from the detailed specification, and thus, it is intended by the appended claims to cover all such features and advantages of these embodiments which fall within the true spirit and scope thereof. Further, since numerous modifications and changes will readily occur to those skilled in the art, it is not desired to limit the embodiments of the invention to the exact construction and operation illustrated and described, and accordingly, all suitable modifications and equivalents may be resorted to, falling within the scope thereof.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
The invention has not been described in detail and is in part known to those of skill in the art.
Claims (10)
1. A metal film coating device for a hemispherical harmonic oscillator is characterized by comprising a revolution platform, a rotation mechanism and two coating assemblies; the rotation mechanism is arranged on the revolution platform and keeps a certain distance with the central axis of the revolution platform; the autorotation mechanism is provided with a groove for assembling the hemispherical harmonic oscillator; the two coating assemblies are arranged above the revolution platform and keep a certain distance with the central axis of the revolution platform; the two coating assemblies respectively comprise a target, and the target faces the revolution platform and forms an included angle with the central axis of the revolution platform; the revolution platform and the rotation mechanism simultaneously carry out revolution and rotation, and the two coating assemblies and the central axis of the revolution platform form different angles and are matched with each other for coating.
2. The apparatus for coating a metal film on a hemispherical resonator as claimed in claim 1, wherein the rotation mechanism comprises a plurality of rotation mechanisms, and the rotation mechanisms are uniformly arranged on the revolution platform around the center of the revolution platform and along the circumference.
3. The apparatus of claim 1, wherein the two coating assemblies are positioned on opposite sides of the central axis of the revolving platform, and the two coating assemblies are positioned at the same height from the center of the target to the revolving platform.
4. The metal film coating device for the hemispherical resonator mirror according to claim 1, wherein the target material of the coating assembly is a metal target, the coating assembly further comprises a target holder and a driving mechanism, the metal target is mounted on the driving mechanism through the target holder, and the driving mechanism is used for controlling the position and the inclination angle of the metal target.
5. The metal film coating device for hemispherical harmonic oscillators of claim 4, wherein the coating assembly further comprises a deformable baffle, a connecting rod and a control mechanism, the deformable baffle is mounted on the control mechanism through the connecting rod, the deformable baffle is arranged in parallel with the metal target, the deformable baffle is of a flat plate structure with an adjustable central aperture, and the control mechanism is used for controlling the distance between the deformable baffle and the metal target and the size of the central aperture of the deformable baffle.
6. The metal film coating device for the hemispherical harmonic oscillator according to claim 5, wherein the distance between the axis of the rotation mechanism and the central axis of the revolution platform is 20mm to 25 mm;
the two coating assemblies are respectively a first coating assembly and a second coating assembly;
the vertical distance from the center of the first metal target in the first film coating assembly to the revolution platform is 300-320 mm, the horizontal distance from the center axis of the revolution platform is 150-160 mm, and the included angle theta between the first metal target and the center axis of the revolution platform is1The adjusting range is 40-65 degrees, and the distance L between the first metal target and the first deformable baffle plate1The value range is 15 mm-20 mm, and the change range of the central aperture of the first deformable baffle is 5 mm-8 mm;
the vertical distance from the center of a second metal target in the second coating component to the revolution platform is 300-320 mm, the horizontal distance from the center axis of the revolution platform is 160-180 mm, and the included angle theta between the second metal target and the center axis of the revolution platform is2The adjusting range is 20 degrees to 40 degrees, and the distance L between the second metal target and the second deformable baffle plate2The value range is 15 mm-20 mm, and the change range of the central aperture of the second deformable baffle is 6 mm-10 mm.
7. The hemisphere harmonic oscillator metal film layer plating apparatus according to claim 1, wherein the hemisphere harmonic oscillator metal film layer plating apparatus is integrated in a vacuum chamber.
8. A method for plating a metal film layer of a hemispherical harmonic oscillator is characterized by comprising the following steps
Assembling the hemispherical harmonic oscillator on a rotation device on the revolution platform;
adjusting the horizontal distance and the vertical distance of the target materials of the two coating assemblies relative to the revolution platform;
after the vacuum chamber is vacuumized to a preset vacuum degree, heating the vacuum chamber in the vacuum chamber, and preserving heat after the preset temperature is reached; filling Ar gas into the vacuum chamber to a preset vacuum degree;
controlling the hemispherical harmonic oscillator to perform revolution and autorotation;
sputtering the two coating assemblies simultaneously;
stopping filling Ar gas into the vacuum chamber, and aging the metal film layer;
and (4) stopping heating the vacuum chamber, cooling to a preset temperature, stopping revolution and rotation of the hemispherical harmonic oscillator, and stopping vacuumizing to finish film coating.
9. The method for plating the metal film of the hemispherical resonator according to claim 8, wherein the deformable baffle is disposed under the targets, and the distance between the two targets and the deformable baffle is adjusted before the vacuum chamber is evacuated, and the metal film is kept unchanged during the plating process; in the sputtering process, the inclination angles of the targets of the two coating assemblies are continuously changed, the deformable baffles are continuously changed along with the inclination angles, and meanwhile, the central apertures of the two deformable baffles are respectively enlarged or reduced at a constant speed.
10. The method for plating a metal film layer on a hemispherical resonator as defined in claim 9, wherein the revolution speed ω of the revolution platform is higher than the revolution speed ω28-10 rpm, and the rotation speed omega of the hemispherical harmonic oscillator rotation mechanism125-30 rpm;
the two coating assemblies are respectively a first coating assembly and a second coating assembly, and in the sputtering process, the angle theta between the metal target of the first coating assembly and the central axis of the revolution platform is1The uniform speed of the second coating component is changed from 40 degrees to 65 degrees, and the angle theta between the metal target of the second coating component and the central axis of the revolution platform2The uniform speed is changed from 40 degrees to 20 degrees, and the angle of the deformable baffle in front of the metal target is changed along with the uniform speed and is kept parallel to the metal target; the central aperture of the deformable baffle of the first coating assembly is changed from 5mm to 8mm at a constant speed, and the central aperture of the deformable baffle of the second coating assembly is changed from 10mm to 6mm at a constant speed.
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| CN114959611A (en) * | 2022-05-30 | 2022-08-30 | 陕西工业职业技术学院 | Bent arm type series-parallel driving type film glancing angle sputtering platform |
| CN115369370A (en) * | 2022-08-19 | 2022-11-22 | 中国科学院上海光学精密机械研究所 | Hemisphere harmonic oscillator metallization coating anchor clamps controlling means |
| CN115572954A (en) * | 2022-09-20 | 2023-01-06 | 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） | High-uniformity film coating device and method for hemispherical workpiece |
| CN115612982A (en) * | 2022-09-27 | 2023-01-17 | 华中科技大学 | Low-loss metallization coating method for quartz glass hemispherical harmonic oscillator and product |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114959611A (en) * | 2022-05-30 | 2022-08-30 | 陕西工业职业技术学院 | Bent arm type series-parallel driving type film glancing angle sputtering platform |
| CN114959611B (en) * | 2022-05-30 | 2023-07-25 | 陕西工业职业技术学院 | Bent arm type series-parallel driving thin film glancing angle sputtering platform |
| CN115369370A (en) * | 2022-08-19 | 2022-11-22 | 中国科学院上海光学精密机械研究所 | Hemisphere harmonic oscillator metallization coating anchor clamps controlling means |
| CN115572954A (en) * | 2022-09-20 | 2023-01-06 | 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） | High-uniformity film coating device and method for hemispherical workpiece |
| CN115572954B (en) * | 2022-09-20 | 2024-07-09 | 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） | High-uniformity coating device and method for hemispherical workpiece |
| CN115612982A (en) * | 2022-09-27 | 2023-01-17 | 华中科技大学 | Low-loss metallization coating method for quartz glass hemispherical harmonic oscillator and product |
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