CN113906732B - 固体摄像装置及使用该固体摄像装置的摄像装置 - Google Patents

固体摄像装置及使用该固体摄像装置的摄像装置 Download PDF

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Publication number
CN113906732B
CN113906732B CN202080039147.5A CN202080039147A CN113906732B CN 113906732 B CN113906732 B CN 113906732B CN 202080039147 A CN202080039147 A CN 202080039147A CN 113906732 B CN113906732 B CN 113906732B
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China
Prior art keywords
storage capacitor
capacitor element
signal
charge
pixel
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Chinese (zh)
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CN113906732A (zh
Inventor
生熊诚
网川裕之
小野泽和利
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Nuvoton Technology Corp Japan
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Nuvoton Technology Corp Japan
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
    • H10F39/1865—Overflow drain structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN202080039147.5A 2019-05-31 2020-05-14 固体摄像装置及使用该固体摄像装置的摄像装置 Active CN113906732B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019103378 2019-05-31
JP2019-103378 2019-05-31
PCT/JP2020/019359 WO2020241289A1 (ja) 2019-05-31 2020-05-14 固体撮像装置、及びそれを用いる撮像装置

Publications (2)

Publication Number Publication Date
CN113906732A CN113906732A (zh) 2022-01-07
CN113906732B true CN113906732B (zh) 2024-08-16

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Country Status (4)

Country Link
US (1) US12101568B2 (https=)
JP (1) JP7535506B2 (https=)
CN (1) CN113906732B (https=)
WO (1) WO2020241289A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7610422B2 (ja) * 2021-02-03 2025-01-08 キヤノン株式会社 撮像装置、撮像システムおよび移動体
US11323644B1 (en) * 2021-02-18 2022-05-03 Semiconductor Components Industries, Llc Image pixels with coupled-gates structures
JP2023032549A (ja) * 2021-08-27 2023-03-09 キヤノン株式会社 光電変換装置、光電変換システム、および移動体
US12185000B2 (en) 2022-07-06 2024-12-31 Omnivision Technologies, Inc. Pixel circuit for high dynamic range image sensor
TW202425302A (zh) * 2022-08-22 2024-06-16 日商索尼半導體解決方案公司 固態攝像裝置
WO2024100767A1 (ja) * 2022-11-08 2024-05-16 ソニーセミコンダクタソリューションズ株式会社 光検出装置、光検出装置の制御方法及び電子機器
US12096141B2 (en) 2023-01-13 2024-09-17 Omnivision Technologies, Inc. LOFIC circuit for in pixel metal-insulator-metal(MIM) capacitor lag correction and associated correction methods
US12177589B2 (en) 2023-01-13 2024-12-24 Omnivision Technologies, Inc.Omnivision Technologies, Inc. High K metal-insulator-metal (MIM) capacitor network for lag mitigation
KR20250163634A (ko) * 2024-05-14 2025-11-21 삼성전자주식회사 이미지 센서 및 이미지 센서의 구동 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009165186A (ja) * 2009-04-23 2009-07-23 Tohoku Univ 光センサおよび固体撮像装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6888122B2 (en) * 2002-08-29 2005-05-03 Micron Technology, Inc. High dynamic range cascaded integration pixel cell and method of operation
CN100525401C (zh) * 2004-04-12 2009-08-05 国立大学法人东北大学 固体摄像装置、光传感器及固体摄像装置的动作方法
JP4497366B2 (ja) 2005-02-04 2010-07-07 国立大学法人東北大学 光センサおよび固体撮像装置
CN101164334B (zh) * 2005-04-07 2010-12-15 国立大学法人东北大学 光传感器、固体摄像装置和固体摄像装置的动作方法
JP4252098B2 (ja) * 2006-09-20 2009-04-08 三洋電機株式会社 光検出装置
RU2509321C2 (ru) * 2008-06-26 2014-03-10 Трикселль Детектор рентгеновского излучения с широким динамическим диапазоном и улучшенным отношением сигнал - шум
US9461088B2 (en) * 2014-12-01 2016-10-04 Omnivision Technologies, Inc. Image sensor pixel with multiple storage nodes
US9917120B2 (en) 2015-11-09 2018-03-13 Semiconductor Components Industries, Llc Pixels with high dynamic range and a global shutter scanning mode
US9942492B2 (en) * 2016-06-16 2018-04-10 Semiconductor Components Industries, Llc Image sensors having high dynamic range functionalities
JP6918552B2 (ja) 2016-11-11 2021-08-11 日本放送協会 読出し制御回路、固体撮像素子、および撮像素子の駆動方法
JP2019080305A (ja) 2017-10-20 2019-05-23 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、固体撮像素子の駆動方法および電子機器

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009165186A (ja) * 2009-04-23 2009-07-23 Tohoku Univ 光センサおよび固体撮像装置

Also Published As

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JPWO2020241289A1 (https=) 2020-12-03
CN113906732A (zh) 2022-01-07
JP7535506B2 (ja) 2024-08-16
US20220053152A1 (en) 2022-02-17
WO2020241289A1 (ja) 2020-12-03
US12101568B2 (en) 2024-09-24

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