JPWO2020241289A1 - - Google Patents
Info
- Publication number
- JPWO2020241289A1 JPWO2020241289A1 JP2021522204A JP2021522204A JPWO2020241289A1 JP WO2020241289 A1 JPWO2020241289 A1 JP WO2020241289A1 JP 2021522204 A JP2021522204 A JP 2021522204A JP 2021522204 A JP2021522204 A JP 2021522204A JP WO2020241289 A1 JPWO2020241289 A1 JP WO2020241289A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
- H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
- H10F39/1865—Overflow drain structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019103378 | 2019-05-31 | ||
| JP2019103378 | 2019-05-31 | ||
| PCT/JP2020/019359 WO2020241289A1 (ja) | 2019-05-31 | 2020-05-14 | 固体撮像装置、及びそれを用いる撮像装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2020241289A1 true JPWO2020241289A1 (https=) | 2020-12-03 |
| JPWO2020241289A5 JPWO2020241289A5 (https=) | 2022-02-22 |
| JP7535506B2 JP7535506B2 (ja) | 2024-08-16 |
Family
ID=73552573
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021522204A Active JP7535506B2 (ja) | 2019-05-31 | 2020-05-14 | 固体撮像装置、及びそれを用いる撮像装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US12101568B2 (https=) |
| JP (1) | JP7535506B2 (https=) |
| CN (1) | CN113906732B (https=) |
| WO (1) | WO2020241289A1 (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7610422B2 (ja) * | 2021-02-03 | 2025-01-08 | キヤノン株式会社 | 撮像装置、撮像システムおよび移動体 |
| US11323644B1 (en) * | 2021-02-18 | 2022-05-03 | Semiconductor Components Industries, Llc | Image pixels with coupled-gates structures |
| JP2023032549A (ja) * | 2021-08-27 | 2023-03-09 | キヤノン株式会社 | 光電変換装置、光電変換システム、および移動体 |
| US12185000B2 (en) | 2022-07-06 | 2024-12-31 | Omnivision Technologies, Inc. | Pixel circuit for high dynamic range image sensor |
| TW202425302A (zh) * | 2022-08-22 | 2024-06-16 | 日商索尼半導體解決方案公司 | 固態攝像裝置 |
| WO2024100767A1 (ja) * | 2022-11-08 | 2024-05-16 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置、光検出装置の制御方法及び電子機器 |
| US12096141B2 (en) | 2023-01-13 | 2024-09-17 | Omnivision Technologies, Inc. | LOFIC circuit for in pixel metal-insulator-metal(MIM) capacitor lag correction and associated correction methods |
| US12177589B2 (en) | 2023-01-13 | 2024-12-24 | Omnivision Technologies, Inc.Omnivision Technologies, Inc. | High K metal-insulator-metal (MIM) capacitor network for lag mitigation |
| KR20250163634A (ko) * | 2024-05-14 | 2025-11-21 | 삼성전자주식회사 | 이미지 센서 및 이미지 센서의 구동 방법 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008104150A (ja) * | 2006-09-20 | 2008-05-01 | Sanyo Electric Co Ltd | 光検出装置 |
| JP2009165186A (ja) * | 2009-04-23 | 2009-07-23 | Tohoku Univ | 光センサおよび固体撮像装置 |
| US20170134675A1 (en) * | 2015-11-09 | 2017-05-11 | Semiconductor Components Industries, Llc | Pixels with high dynamic range and a global shutter scanning mode |
| JP2018085709A (ja) * | 2016-11-11 | 2018-05-31 | 日本放送協会 | 読出し制御回路、固体撮像素子、および撮像素子の駆動方法 |
| JP2019080305A (ja) * | 2017-10-20 | 2019-05-23 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子、固体撮像素子の駆動方法および電子機器 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6888122B2 (en) * | 2002-08-29 | 2005-05-03 | Micron Technology, Inc. | High dynamic range cascaded integration pixel cell and method of operation |
| CN100525401C (zh) * | 2004-04-12 | 2009-08-05 | 国立大学法人东北大学 | 固体摄像装置、光传感器及固体摄像装置的动作方法 |
| JP4497366B2 (ja) | 2005-02-04 | 2010-07-07 | 国立大学法人東北大学 | 光センサおよび固体撮像装置 |
| CN101164334B (zh) * | 2005-04-07 | 2010-12-15 | 国立大学法人东北大学 | 光传感器、固体摄像装置和固体摄像装置的动作方法 |
| RU2509321C2 (ru) * | 2008-06-26 | 2014-03-10 | Трикселль | Детектор рентгеновского излучения с широким динамическим диапазоном и улучшенным отношением сигнал - шум |
| US9461088B2 (en) * | 2014-12-01 | 2016-10-04 | Omnivision Technologies, Inc. | Image sensor pixel with multiple storage nodes |
| US9942492B2 (en) * | 2016-06-16 | 2018-04-10 | Semiconductor Components Industries, Llc | Image sensors having high dynamic range functionalities |
-
2020
- 2020-05-14 JP JP2021522204A patent/JP7535506B2/ja active Active
- 2020-05-14 WO PCT/JP2020/019359 patent/WO2020241289A1/ja not_active Ceased
- 2020-05-14 CN CN202080039147.5A patent/CN113906732B/zh active Active
-
2021
- 2021-10-28 US US17/513,622 patent/US12101568B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008104150A (ja) * | 2006-09-20 | 2008-05-01 | Sanyo Electric Co Ltd | 光検出装置 |
| JP2009165186A (ja) * | 2009-04-23 | 2009-07-23 | Tohoku Univ | 光センサおよび固体撮像装置 |
| US20170134675A1 (en) * | 2015-11-09 | 2017-05-11 | Semiconductor Components Industries, Llc | Pixels with high dynamic range and a global shutter scanning mode |
| JP2018085709A (ja) * | 2016-11-11 | 2018-05-31 | 日本放送協会 | 読出し制御回路、固体撮像素子、および撮像素子の駆動方法 |
| JP2019080305A (ja) * | 2017-10-20 | 2019-05-23 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子、固体撮像素子の駆動方法および電子機器 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113906732A (zh) | 2022-01-07 |
| JP7535506B2 (ja) | 2024-08-16 |
| CN113906732B (zh) | 2024-08-16 |
| US20220053152A1 (en) | 2022-02-17 |
| WO2020241289A1 (ja) | 2020-12-03 |
| US12101568B2 (en) | 2024-09-24 |
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