CN113906574A - 半导体结构和半导体结构的制备方法 - Google Patents
半导体结构和半导体结构的制备方法 Download PDFInfo
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- CN113906574A CN113906574A CN201980096751.9A CN201980096751A CN113906574A CN 113906574 A CN113906574 A CN 113906574A CN 201980096751 A CN201980096751 A CN 201980096751A CN 113906574 A CN113906574 A CN 113906574A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 59
- 238000002360 preparation method Methods 0.000 title abstract description 5
- 238000009792 diffusion process Methods 0.000 claims abstract description 142
- 230000004888 barrier function Effects 0.000 claims abstract description 103
- 230000000274 adsorptive effect Effects 0.000 claims abstract description 45
- 150000001875 compounds Chemical class 0.000 claims description 30
- 230000007423 decrease Effects 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000005247 gettering Methods 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000008859 change Effects 0.000 abstract description 9
- 230000000903 blocking effect Effects 0.000 abstract description 6
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 7
- 230000003247 decreasing effect Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000000407 epitaxy Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
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- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000005533 two-dimensional electron gas Effects 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
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- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66431—Unipolar field-effect transistors with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
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Abstract
本申请的实施例提供了一种半导体结构和半导体结构的制备方法，涉及微电子技术领域。该半导体结构包括缓冲层，所述缓冲层包括扩散元素；形成于所述缓冲层上的扩散阻挡层，所述扩散阻挡层包括吸附性元素；以及形成于所述扩散阻挡层上的沟道层。本实施例中，所述扩散阻挡层设置有吸附扩散元素的吸附性元素，从而有效阻挡扩散元素从缓冲层扩散至沟道层。此外，通过设置扩散阻挡层中吸附性元素的组分变化来避免扩散阻挡层的应力释放。
Description
PCT国内申请，说明书已公开。
Claims (15)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2019/090554 WO2020248098A1 (zh) | 2019-06-10 | 2019-06-10 | 半导体结构和半导体结构的制备方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113906574A true CN113906574A (zh) | 2022-01-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980096751.9A Pending CN113906574A (zh) | 2019-06-10 | 2019-06-10 | 半导体结构和半导体结构的制备方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20220085195A1 (zh) |
| CN (1) | CN113906574A (zh) |
| WO (1) | WO2020248098A1 (zh) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101390201A (zh) * | 2005-12-28 | 2009-03-18 | 日本电气株式会社 | 场效应晶体管和用于制备场效应晶体管的多层外延膜 |
| CN101789446A (zh) * | 2010-02-09 | 2010-07-28 | 中国科学院上海技术物理研究所 | 一种双异质结mos-hemt器件 |
| US20150041825A1 (en) * | 2013-08-12 | 2015-02-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device, high electron mobility transistor (hemt) and method of manufacturing |
| CN104600109A (zh) * | 2015-01-07 | 2015-05-06 | 中山大学 | 一种高耐压氮化物半导体外延结构及其生长方法 |
| WO2018180021A1 (ja) * | 2017-03-31 | 2018-10-04 | 富士通株式会社 | 窒化物半導体装置及びその製造方法 |
| CN109671815A (zh) * | 2018-11-14 | 2019-04-23 | 华灿光电（浙江）有限公司 | 发光二极管的外延片及其制作方法、发光二极管 |
| WO2019097963A1 (ja) * | 2017-11-16 | 2019-05-23 | パナソニック株式会社 | Ｉｉｉ族窒化物半導体 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100525545B1 (ko) * | 2003-06-25 | 2005-10-31 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
| CN102931229B (zh) * | 2012-11-06 | 2016-01-20 | 中国电子科技集团公司第五十五研究所 | 一种AlGaN/GaN/InGaN双异质结材料及其生产方法 |
| CN106887494B (zh) * | 2017-02-21 | 2019-03-08 | 华灿光电（浙江）有限公司 | 一种发光二极管的外延片及其制造方法 |
-
2019
- 2019-06-10 WO PCT/CN2019/090554 patent/WO2020248098A1/zh active Application Filing
- 2019-06-10 CN CN201980096751.9A patent/CN113906574A/zh active Pending
-
2021
- 2021-11-26 US US17/535,934 patent/US20220085195A1/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101390201A (zh) * | 2005-12-28 | 2009-03-18 | 日本电气株式会社 | 场效应晶体管和用于制备场效应晶体管的多层外延膜 |
| CN101789446A (zh) * | 2010-02-09 | 2010-07-28 | 中国科学院上海技术物理研究所 | 一种双异质结mos-hemt器件 |
| US20150041825A1 (en) * | 2013-08-12 | 2015-02-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device, high electron mobility transistor (hemt) and method of manufacturing |
| CN104600109A (zh) * | 2015-01-07 | 2015-05-06 | 中山大学 | 一种高耐压氮化物半导体外延结构及其生长方法 |
| WO2018180021A1 (ja) * | 2017-03-31 | 2018-10-04 | 富士通株式会社 | 窒化物半導体装置及びその製造方法 |
| WO2019097963A1 (ja) * | 2017-11-16 | 2019-05-23 | パナソニック株式会社 | Ｉｉｉ族窒化物半導体 |
| CN109671815A (zh) * | 2018-11-14 | 2019-04-23 | 华灿光电（浙江）有限公司 | 发光二极管的外延片及其制作方法、发光二极管 |
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| Publication number | Publication date |
|---|---|
| WO2020248098A1 (zh) | 2020-12-17 |
| US20220085195A1 (en) | 2022-03-17 |
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