CN113903728A - 功率半导体模块 - Google Patents
功率半导体模块 Download PDFInfo
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- CN113903728A CN113903728A CN202110689821.0A CN202110689821A CN113903728A CN 113903728 A CN113903728 A CN 113903728A CN 202110689821 A CN202110689821 A CN 202110689821A CN 113903728 A CN113903728 A CN 113903728A
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- die pad
- die
- power semiconductor
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- electrical connection
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Abstract
一种功率半导体模块,包括:引线框,具有第一管芯焊盘、与所述第一管芯焊盘分离的第二管芯焊盘、形成为所述第一管芯焊盘的延伸部的第一电源引线、与所述第一管芯焊盘和所述第二管芯焊盘分离的第二电源引线、以及形成为所述第二电源引线的延伸部且与所述第二管芯焊盘并排的第一连接区域。第一多个功率半导体管芯附接到所述第一管芯焊盘并且并联电耦合。第二多个功率半导体管芯附接到所述第二管芯焊盘并且并联电耦合。第一电连接在第一方向上在所述第一多个功率半导体管芯和所述第二管芯焊盘之间延伸。第二电连接在所述第一方向上在所述第二多个功率半导体管芯和所述第一连接区域之间延伸。
Description
背景技术
逆变器功率模块已经从利基市场解决方案(niche market solution)过渡到汽车工业中的日用品。如果逆变器功率模块的复杂度仍然小,则可以从产品生命周期中具有较高成熟度的现有产品中借用模块和封装概念。不进行任何调整,即使在单个封装中实现带有两个功率开关器件的简单半桥,也排除了使用常设的高效生产设计,从而限制了一些需求,例如功率和温度额定值、开关对称性、信号的路由能力,等等。
使用常规引线框概念来实现半桥涉及模制两个单个功率开关器件,每个功率开关器件具有通常被称为管芯焊盘或桨状物(paddle)的铜基板,以及对应的驱动器芯片(管芯)及彼此相邻的电源(power)和信号引脚。功率开关器件通过不同的方法连接在相节点(phase node)处。例如,相连接(phase connection)可以通过芯片正面上的铜夹提供,由于可焊接的正面金属化,铜夹导致芯片成本高昂。在另一种情况下,通过使用更常设的结合技术来提供相连接,这些结合技术具有更具成本效益的芯片正面,但实际承载电流的能力/横截面有限。在此,结合温度是限制参数,其由于形成相连接所需的相对大的结合长度而大大增高。
大的结合长度来自于如下所述的缩放效应。根据功率等级并且从而所使用的芯片的数量,常设的结合技术要求必须在两个不同的维度上分布芯片(例如,x方向的高侧开关器件和y方向的低侧开关器件)以具有相同数量的导线(即,相同的横截面)可用于承载电流。这导致模块的紧凑性非常受限。使用一个大芯片而不是两个或单独的芯片来实现高侧开关器件和低侧开关器件导致受限的竞争性(这是因为焊料空洞率更高,焊料空洞率更高导致产量损失增加)和成本效益更低的晶圆产量(由于未使用的晶圆边缘的面积更大)。
此外,应使用此类概念仔细研究连接的电源引脚的温度。通常,电源引脚的温度受到严格限制(例如125℃),从而限制了因热应力而损坏逆变器中的其他组件,尤其是中间电路电容器、母线隔离等。由于至少一个电源引脚必须直接连接到一个开关(例如低侧)的芯片正面,因此与连接到基板/管芯焊盘的引脚相比,该引脚承受的热量很多,在不采取任何进一步的冷却措施的情况下,该热量将超过温度限制。在多个高侧和低侧管芯的情况下,低侧管芯通常相对于高侧管芯旋转90°,以便使用相同数量的导线结合,这限制了封装的功率可扩展性,因为缩放必须在两个维度上进行。
因此,需要适合大规模生产的低成本且可扩展的逆变器功率模块。
发明内容
根据功率半导体模块的实施例,所述功率半导体模块包括:引线框,包括第一管芯焊盘、与所述第一管芯焊盘分离的第二管芯焊盘、形成为所述第一管芯焊盘的延伸部的第一电源引线、与所述第一管芯焊盘和所述第二管芯焊盘分离的第二电源引线、以及形成为所述第二电源引线的延伸部且与所述第二管芯焊盘并排的第一连接区域;第一多个功率半导体管芯,附接到所述第一管芯焊盘并且并联电耦合;第二多个功率半导体管芯,附接到所述第二管芯焊盘并且并联电耦合;第一电连接,在第一方向上在所述第一多个功率半导体管芯和所述第二管芯焊盘之间延伸;以及第二电连接,在所述第一方向上在所述第二多个功率半导体管芯和所述第一连接区域之间延伸。
根据功率半导体模块的另一实施例,所述功率半导体模块包括:引线框,包括第一管芯焊盘、与所述第一管芯焊盘分离的第二管芯焊盘、形成为所述第一管芯焊盘的延伸部的正DC引线、负DC引线、相输出引线、以及形成为所述负DC引线的延伸部且与所述第二管芯焊盘并排的第一连接区域;多个高侧功率晶体管管芯,附接到所述第一管芯焊盘并且并联电耦合;多个低侧功率晶体管管芯,附接到所述第二管芯焊盘并且并联电耦合;第一电连接,在第一方向上在所述多个高侧功率晶体管管芯和所述第二管芯焊盘之间延伸;以及第二电连接,在所述第一方向上在所述多个低侧功率晶体管管芯和所述第一连接区域之间延伸,其中,所述多个高侧功率晶体管管芯和所述多个低侧功率晶体管管芯电耦合成半桥结构,所述半桥结构具有经由所述相输出引线可访问的开关节点。
本领域技术人员在阅读以下详细描述并在查看附图时将认识到其他特征和优点。
附图说明
附图的元件不必相对于彼此成比例。相似的附图标记指代对应的类似部分。可以组合各种所示实施例的特征,除非它们相互排斥。在附图中描绘了实施例,并且在以下描述中详细描述了这些实施例。
图1示出了功率半导体模块的实施例的框图。
图2示出了功率半导体模块的实施例的透视图。
图3示出了功率半导体模块的另一个实施例的透视图。
图4示出了功率半导体模块的另一个实施例的框图。
具体实施方式
在此描述的实施例提供了一种功率半导体模块,其具有形成为电源引线的延伸部的连接区域。具有连接区域延伸部的电源引线是引线框的一部分,该引线框还包括管芯焊盘,半导体管芯所附接至该管芯焊盘。具有连接区域延伸部的电源引线与管芯焊盘分离,并且连接区域延伸部与管芯焊盘之一并排设置。电源引线的连接区域延伸部和管芯焊盘布置成行,使得可以在功率半导体模块内沿相同方向在管芯和引线框之间进行所有电源电连接。
本文所述的用于功率半导体模块的引线框配置通过在至少一个模块管芯焊盘中引入具有高纵横比的至少一个间隙来打破高侧和低侧开关器件的对称性。在逆变器功率模块的情况下,该间隙至少部分地被电源引脚(诸如DC链路引脚)的延长延伸部所占据。本文所述的功率模块布置给基于引线框的模块提供了非常有限但高度有效的布线能力,并且避免了低侧开关管芯的90°旋转,这导致了封装的功率可扩展性提高,因为仅需在一个维度上进行缩放。通过这种措施,可以使模块的紧凑性最大化,并且可以减小结合长度,并从而可以降低结合温度。此外,可以在不改变导线结合长度和/或封装尺寸的情况下缩放芯片尺寸。同样,在逆变器功率模块的情况下,通常保持未受冷却的DC链路电源引脚现在可以与其他电源引脚和管芯焊盘具有相同的至冷却结构的连接,从而导致了较低的DC链路电源引脚温度。模块的杂散电感不会受到负面影响,而发射极耦合现在是可能的,因为既然IGBT通常在相同的维度上堆叠,所以IGBT(绝缘栅双极晶体管)可以放置在DC链路附近。
与采用结合技术的其他基于引线框的半桥解决方案相比,本文所述的措施还有望显著提高模块性能,同时保留模块的高度自动化和有成本效益的基本解决方案的优势。功率半导体模块中包括的每个基板/管芯焊盘都可以由冲压的引线框制成,并且可以使用具有成本效益的解决方案(诸如用于较低电流的Al导线)进行芯片互连。取决于模块的冷却解决方案(耗散的芯片功率)等,可以使用用于获得更高的电流的铝带、CucorAl(带铜芯和铝涂层的复合带类型)带和/或AlCu覆层带,以形成一些或全部可以在功率半导体模块内的引线框和管芯之间进行的电源电连接。
图1示出了功率半导体模块100的实施例。功率半导体模块100包括附接到热沉104的引线框102,热沉104可以是主动或被动冷却器的一部分。例如,在逆变器功率模块能够输送300安培或更多安培的情况下,热沉104可以是主动冷却系统的一部分,该主动冷却系统包括泵和散热器。在被动冷却系统的情况下,热沉104可以包括用于将热量耗散到周围环境的鳍状物或其他结构。
引线框102包括第一管芯焊盘(桨状物)106、与第一管芯焊盘106分离的第二管芯焊盘108、第一电源引线110和第二电源引线112。在本文中可互换使用的术语“管芯焊盘”和“管芯桨状物”意指设计用于容纳一个或多个半导体管芯的引线框的一部分或区域。
第一电源引线110形成为第一管芯焊盘106的延伸部。第二电源引线112与第一和第二管芯焊盘106、108分离。第一连接区域114形成为第二电源引线112的延伸部,与第二管芯焊盘108并排。在一个实施例中,在x方向上测量的话,第二电源引线112的第一连接区域延伸部114比第一管芯焊盘106和第二管芯焊盘108窄。即,第二电源引线112的第一连接区域延伸部114的宽度(w1)小于第一管芯焊盘106的宽度(w2)和第二管芯焊盘108的宽度(w3)。
在逆变器功率模块能够输送300安培或更多安培的情况下,引线116可以形成为第二管芯焊盘108的延伸部,以形成逆变器的相输出。在双向功率转换器的情况下,形成为引线框102的第二管芯焊盘108的延伸部的引线116可以是在功率流的一个方向上的相输入和在相反的功率流方向上的相输出。
引线框102可以是从相同的引线框面板生产的数个引线框之一,该引线框面板可以由金属片形成。可以使用诸如冲压、冲孔、蚀刻等的典型技术来形成本文所述的引线框特征和结构。用于引线框102的示例性材料包括诸如铜、铝、镍、铁、锌等的金属及其合金。
功率半导体模块100还包括附接到第一管芯焊盘106并且并联电耦合的第一功率半导体管芯118。第二功率半导体管芯120附接到第二管芯焊盘120并且并联电耦合。功率半导体管芯118、120可以是功率晶体管管芯,诸如功率MOSFET(金属氧化物半导体场效应晶体管)管芯、IGBT(绝缘栅双极晶体管)管芯、HEMT(高电子迁移率晶体管)管芯等。功率半导体管芯118、120可以替代地是功率二极管管芯。在任一情况下,并且如图1所示,功率半导体管芯118、120可以是垂直器件,因为原电流(primary current)流动路径垂直位于相应管芯118、120的一个主(顶部/底部)表面与相对主(底部/顶部)管芯表面之间。附接到引线框102的热沉104在引线框102的背离功率半导体管芯118、120的一侧热耦合到第一管芯焊盘106、第二管芯焊盘108和第二电源引线112的第一连接区域延伸部114并且与第一管芯焊盘106、第二管芯焊盘108和第二电源引线112的第一连接区域延伸部114电绝缘。热沉104和引线框102之间的电隔离可以由低热阻隔离层提供,该低热阻隔离层包封引线框102的暴露的底表面。在另一个示例中,可以将具有铜层的有机箔施加到引线框102的暴露的底表面和施加于铜层的热界面材料。在又一示例中,有机箔可以被施加到引线框102的暴露的底表面,并且热沉104接触有机箔。
第二电源引线112的连接区域延伸部114可以附接到热沉104,以提供对第二电源引线112的直接冷却,该第二电源引线112例如可以是逆变器配置中的负(-)DC链路端子。第一功率晶体管管芯118在与第一管芯焊盘106的长度对准并与第一管芯焊盘106的宽度w2垂直的第一行中附接到第一管芯焊盘106,第二功率晶体管管芯120可以在平行于第一行并且与第二管芯焊盘108的长度对准并且与第二管芯焊盘108的宽度w3垂直的第二行中附接到第二管芯焊盘108,并且第二电源引线112的连接区域延伸部114可以在平行于功率半导体管芯118、120的第一和第二行的方向(y)上并垂直于连接区域延伸部114的宽度w1纵向延伸。。
功率半导体模块100还包括在第一(x)方向上在第一功率半导体管芯118和第二管芯焊盘108之间延伸的第一电连接122。第二电连接124沿与第一电连接122相同的第一方向(x)在第二功率半导体管芯120和第二电源引线112的连接区域延伸部114之间延伸,从而避免第二功率半导体管芯120的90°旋转。因此,由第一和第二电连接122、124提供的到功率半导体管芯118、120的电源连接被定向在相同的(x)方向上。在图1中示意性地示出了第一和第二电连接122、124,第一和第二电连接122、124提供电源连接,并且可以被实现为带状结合、导线结合、金属夹等。第一和第二电连接122、124被视为电源连接,因为它们传递逆变器或转换器电压电势和/或承载大量电流,这与例如未示出但提供栅极电势并承载可忽略电流的晶体管栅极连接相反。
在能够输送300A或更多安培的逆变器功率模块的情况下,第一和第二电连接122、124可以将半桥结构中的第一和第二功率半导体管芯118、120与相输入/输出耦合,如由图1中包括的虚线框示意性地示出的。
在半桥结构中,高侧开关器件HS包括具有对应的反并联连接的二极管D1的并联耦合的第一功率半导体管芯118。低侧开关器件LS类似地包括具有对应的反并联连接的二极管D2的并联耦合的第二功率半导体管芯120。在一些情况下,各自反并联连接的二极管D1、D2可以被集成在每个对应的管芯118、120中。在其他情况下,各自反并联连接的二极管D1、D2可以是附接至与对应的一组并联耦合的功率半导体芯片118、120相同的管芯焊盘106、108的分立管芯。形成为第二管芯焊盘108的延伸部的引线116将相输入/输出提供给半桥。第一电源引线110为半桥提供正(+)DC链路连接,且第二电源引线112提供负(-)DC链路连接。
例如,通过复制图1所示的半桥结构,可以在功率半导体模块100中提供一个以上的半桥,或者可以实现其他类型的逆变器或转换器拓扑,诸如全桥、DC至AC转换器、可逆DC电动机驱动器、三相或更高相桥、降压转换器、升压转换器、同步整流器等。功率半导体模块100可以包封在例如模塑料中,盖子可以附接至功率半导体模块100,功率半导体模块100可以放置在外壳等中。不管功率半导体模块100的最终设置如何,第二电源引线112的连接区域延伸部114和管芯焊盘106、108都布置成行,使得在功率半导体模块100内在相同方向(x)上在管芯118、120和引线框102之间实现在期望的配置中连接功率半导体管芯118、120的电连接122、124。
图2示出了功率半导体模块200的另一个实施例。与图1中的功率半导体模块100不同,引线框102还有待于从图2中的引线框面板202切断。引线框面板202的仅一部分示于图2中。取决于配置的类型,功率半导体模块200可以包括附加的半导体管芯204、206,诸如附接到各个管芯焊盘106、108的电容器和/或二极管管芯。例如,在第一和第二功率半导体管芯118、120是IGBT管芯的情况下,第一功率二极管管芯204可以附接到第一管芯焊盘106,并且经由第一管芯焊盘106和第一电连接122与第一IGBT管芯118反并联电耦合。第二功率二极管管芯206可以附连到第二管芯焊盘108,并且经由第二管芯焊盘108和第二电连接124与第二IGBT管芯120反并联电耦合。
在图2中,第一和第二电连接122、124示出为带状结合。然而,第一和第二电连接122、124可以替代地被实现为另一种类型的电源连接,诸如导线结合、金属夹等。
如图2所示,第二电源引线112的连接区域延伸部114可以插入同一行中的第一管芯焊盘106和第二管芯焊盘108之间。根据实施例,附加连接区域208形成为第二管芯焊盘108的延伸部。在第一功率半导体管芯118和第二管芯焊盘108之间延伸的电连接122可以接触第二管芯焊盘108的连接区域延伸部208。第二电源引线112的连接区域延伸部114可以以交错的方式设置在第二管芯焊盘108和第二管芯焊盘108的连接区域延伸部208之间的间隙210中。可以在第二管芯焊盘108和第二管芯焊盘108的连接区域延伸部208之间提供附加的电源连接212。引线框102可以包括附加的引线214,用于提供在作为功率半导体管芯118、120的功率晶体管的情况下的栅极连接,提供遥测连接、感测连接等。
图3示出了功率半导体模块300的另一个实施例。图2和图3所示的实施例强调了由本文所述的引线框配置提供的功率模块缩放灵活性。可以容易地缩放包括在功率半导体模块300中的半导体管芯118、120的数量和类型/尺寸(面积),而不会不利地影响功率模块的布局和占地面积,从而允许在不同系统设计和应用中的功率模块兼容性。
图4示出了功率半导体模块400的另一实施例。如图2和3所示,引线框102还有待于从图4中的引线框面板202切断,并且仅示出了引线框面板202的一部分。图4还示出了诸如模塑料的密封剂402的轮廓,模塑料包裹功率半导体管芯118、120和引线框102的一部分。不同于图2和图3中的功率半导体模块200、300而类似于图1中的功率半导体模块100,第二管芯焊盘108插入在图4中的第一管芯焊盘106和第二电源引线112的连接区域延伸部114之间。
根据图4所示的实施例,功率半导体模块400是逆变器功率模块,其能够传输300安培或更高的电流,并且具有正(+)DC链路电压输入,负(-)DC链路电压输入和相()输出。第一功率半导体管芯118包括附接到第一管芯焊盘106并且并联电耦合的高侧功率晶体管管芯118',且第二功率半导体管芯120包括附接到第二管芯焊盘108并且并联电耦合的低侧功率晶体管管芯120'。第一电连接122在第一方向(x)上在高侧功率晶体管管芯118'和第二管芯焊盘108之间延伸。第二电连接124在第一方向(x)上在低侧功率晶体管管芯1210'和第二电源引线112的连接区域延伸部114之间延伸。高侧功率晶体管管芯118'和低侧功率晶体管管芯120'电耦合成半桥结构,该半桥结构具有通过引线框102的相()引线116可访问的开关节点。在图4中,第一和第二电连接122、124被示为带状结合。然而,第一和第二电连接122、124可以替代地被实现为另一种类型的电源连接,诸如导线结合、金属夹等。
引线框102还包括第一栅极引线404和第二栅极引线406。引线框102可以包括用于提供遥测连接、感测连接等的附加引线408。在引线框102的第一栅极引线404和每个高侧功率晶体管管芯118'的栅极端子412之间提供第三电连接410。在引线框102的第二栅极引线406和每个低侧功率晶体管管芯120'的栅极端子416之间提供第四电连接414。第三电连接410至少在高侧功率晶体管管芯118'的栅极端子412之间相对于第一电连接122垂直延伸。第四电连接414也至少在低侧功率晶体管管芯120'的栅极端子416之间相对于第二电连接124垂直延伸。
通过相同的连接为数个并联耦合的管芯提供栅极连接可能会由于互感而导致栅极电压下降。在并联耦合的IGBT管芯的情况下,如果在栅极环路连接410/414和对应的发射极环路连接122/124之间提供90度(垂直)取向,如图4所示,则施加到所有并联耦合的IGBT118'/120'的栅极电压相同。由于开关行为,可能会出现一些电压下降,但是每个并联耦合的IGBT管芯118'/120'看到相同或几乎相同的栅极电压,这是因为发射极环路连接122/124产生的电感相对于对应的栅极环路连接410/414成90度取向,如图4所示,并且因此最小化了由于互感而引起的损耗。替代地,如果栅极与发射极环路连接彼此平行,则在链中的第二并联耦合的IGBT管芯看到小20%的栅极电压,第三并联耦合的IGBT管芯看到小60%的栅极电压,等等。至少一个并联耦合的IGBT管芯可能无法接收足够的栅极电压来导通,这可以通过图4中所示的第一和第三电连接122、410之间以及第二和第四电连接124、414之间的90度(垂直)取向来防止。
第三和第四电连接410、414的垂直取向不一定在相应的栅极连接410、414的整个长度上保持。例如,如图4所示,提供高侧栅极连接的第三电连接410可以在对应的栅极引线404和高侧功率晶体管管芯118'之间弯曲,但是在高侧功率晶体管管芯118'的栅极端子412之间保持笔直。提供低侧栅极连接的第四电连接414也可以在对应的栅极引线406和低侧功率晶体管管芯120'之间弯曲,但是在低侧功率晶体管管芯120'的栅极端子416之间保持笔直。在图4中,第三和第四电连接410、414被示出为导线结合。然而,第三和第四电连接410、414可以替代地被实现为另一种类型的电源连接,例如带状结合、金属夹等。
在一个实施例中,高侧功率晶体管管芯118'和低侧功率晶体管管芯120'是IGBT管芯。在这种情况下,每个高侧功率晶体管管芯118'的集电极端子(视图之外)附接到第一管芯焊盘106,从而经由第一电源引线110附接至正(+)DC链路电压。每个低侧功率晶体管管芯120'的集电极端子(视图之外)附接到第二管芯焊盘108。每个高侧功率晶体管管芯118'的发射极端子418通过第一电连接122耦合到引线框102的第二管芯焊盘108以在引线116处形成半桥的相输入/输出()。每个高侧功率晶体管管芯118'的发射极端子420通过第二电连接124耦合到第二电源引线112的连接区域延伸部114,并因此通过第二电源引线124耦合到负(-)DC链路电压。
在IGBT功率晶体管管芯118'、120'的情况下,功率半导体模块400还可包括高侧功率二极管管芯422和低侧功率二极管管芯424。高侧功率二极管管芯422附接接到第一管芯焊盘106,并且经由第一管芯焊盘106和第一电连接122与高侧IGBT管芯118'反并联电耦合。低侧功率二极管管芯424附接到第二管芯焊盘108,并且经由第二管芯焊盘和第二电连接与低侧IGBT管芯120'反并联电耦合。在其他逆变器实施方式中,二极管功能可以集成在相应的功率晶体管管芯118'、120'中。图1至图3所示的热沉104在图4中的视图之外,并且例如如果稍后提供单独的系统级冷却系统,则可以将其省略。
尽管本公开不限于此,但是以下编号的示例说明了本公开的一个或多个方面。
示例1。一种功率半导体模块,包括:引线框,包括第一管芯焊盘、与所述第一管芯焊盘分离的第二管芯焊盘、形成为所述第一管芯焊盘的延伸部的第一电源引线、与所述第一管芯焊盘和所述第二管芯焊盘分离的第二电源引线、以及形成为所述第二电源引线的延伸部且与所述第二管芯焊盘并排的第一连接区域;第一多个功率半导体管芯,附接到所述第一管芯焊盘并且并联电耦合;第二多个功率半导体管芯,附接到所述第二管芯焊盘并且并联电耦合;第一电连接,在第一方向上在所述第一多个功率半导体管芯和所述第二管芯焊盘之间延伸;以及第二电连接,在所述第一方向上在所述第二多个功率半导体管芯和所述第一连接区域之间延伸。
示例2。根据示例1所述的功率半导体模块,其中,所述第一管芯焊盘、所述第二管芯焊盘和所述第一连接区域设置成行,并且其中,所述第二管芯焊盘介于所述第一管芯焊盘和所述第一连接区域之间。
示例3。根据示例1所述的功率半导体模块,其中,所述第一管芯焊盘、所述第二管芯焊盘和所述第一连接区域设置成行,并且其中,所述第一连接区域介于所述第一管芯焊盘和所述第二管芯焊盘之间。
示例4。根据示例1至3所述的功率半导体模块,其中,第二连接区域形成为所述第二管芯焊盘的延伸部,其中,所述第一电连接接触所述第二连接区域,并且其中,所述第一连接区域设置在所述第二管芯焊盘和所述第二连接区域之间的间隙中。
示例5。根据示例1至4中任何一个所述的功率半导体模块,其中,所述第一多个功率半导体管芯包括第一功率晶体管管芯,其中,所述第二多个功率半导体管芯包括第二功率晶体管管芯,其中,所述第一功率晶体管管芯和所述第二功率晶体管管芯电耦合成半桥结构,并且其中,所述引线框还包括第一栅极引线、第二栅极引线和形成为所述第二管芯焊盘的延伸部的输出引线。
示例6。根据示例5所述的功率半导体模块,还包括:第三电连接,在所述引线框的所述第一栅极引线和每个第一功率晶体管管芯的栅极端子之间;以及第四电连接,在所述引线框的所述第二栅极引线和每个第二功率晶体管管芯的栅极端子之间,其中,所述第三电连接在所述第一功率晶体管管芯的所述栅极端子之间相对于所述第一电连接垂直延伸,其中,所述第四电连接在所述第二功率晶体管管芯的所述栅极端子之间相对于所述第二电连接垂直延伸。
示例7。根据示例5或6所述的功率半导体模块,其中,所述第一功率晶体管管芯在第一行中附接到所述第一管芯焊盘,其中,所述第二功率晶体管管芯在平行于所述第一行的第二行中附接到所述第二管芯焊盘,并且其中,所述第二电源引线的所述第一连接区域在平行于所述第一行和所述第二行的方向上纵向延伸。
示例8。根据示例1至4中任何一个所述的功率半导体模块,其中,所述第一多个功率半导体管芯包括第一功率二极管管芯,并且其中,所述第二多个功率半导体管芯包括第二功率二极管管芯。
示例9。根据示例1至8中任何一个所述的功率半导体模块,其中,所述第一电连接包括多个第一带状结合,并且其中,所述第二电连接包括多个第二带状结合。
示例10。根据示例1至4和9所述的功率半导体模块,其中,所述第一多个功率半导体管芯包括第一IGBT(绝缘栅双极晶体管)管芯,其中,所述第二多个功率半导体管芯包括第二IGBT管芯,并且其中,所述功率半导体模块还包括:第一多个功率二极管管芯,附接到所述第一管芯焊盘并且经由所述第一管芯焊盘和所述第一电连接与所述第一IGBT管芯反并联电耦合;以及第二多个功率二极管管芯,附接到所述第二管芯焊盘并且经由所述第二管芯焊盘和所述第二电连接与所述第二IGBT管芯反并联电耦合。
示例11。根据示例1至10中任意一个所述的功率半导体模块,还包括:热沉,在所述引线框的背离所述功率半导体管芯的一侧热耦合到所述第一管芯焊盘、所述第二管芯焊盘和所述第一连接区域并与所述第一管芯焊盘、所述第二管芯焊盘和所述第一连接区域电绝缘。
示例12。根据示例1至11中任意一个所述的功率半导体模块,其中,在所述第一方向上测量时,所述第一连接区域比所述第一管芯焊盘和所述第二管芯焊盘窄。
示例13。一种功率半导体模块,包括:引线框,包括第一管芯焊盘、与所述第一管芯焊盘分离的第二管芯焊盘、形成为所述第一管芯焊盘的延伸部的正DC引线、负DC引线、相输出引线、以及形成为所述负DC引线的延伸部且与所述第二管芯焊盘并排的第一连接区域;多个高侧功率晶体管管芯,附接到所述第一管芯焊盘并且并联电耦合;多个低侧功率晶体管管芯,附接到所述第二管芯焊盘并且并联电耦合;第一电连接,在第一方向上在所述多个高侧功率晶体管管芯和所述第二管芯焊盘之间延伸;以及第二电连接,在所述第一方向上在所述多个低侧功率晶体管管芯和所述第一连接区域之间延伸,其中,所述多个高侧功率晶体管管芯和所述多个低侧功率晶体管管芯电耦合成半桥结构,所述半桥结构具有经由所述相输出引线可访问的开关节点。
示例14。根据示例13所述的功率半导体模块,其中,所述第一管芯焊盘、所述第二管芯焊盘和所述第一连接区域设置成行,并且其中,所述第二管芯焊盘介于所述第一管芯焊盘和所述第一连接区域之间。
示例15。根据示例13所述的功率半导体模块,其中,所述第一管芯焊盘、所述第二管芯焊盘和所述第一连接区域设置成行,并且其中,所述第一连接区域介于所述第一管芯焊盘和所述第二管芯焊盘之间。
示例16。根据示例13至15中任意一个所述的功率半导体模块,其中,第二连接区域形成为所述第二管芯焊盘的延伸部,其中,所述第一电连接接触所述第二连接区域,并且其中,所述第一连接区域设置在所述第二管芯焊盘和所述第二连接区域之间的间隙中。
示例17。根据示例13至16中任意一个所述的功率半导体模块,还包括:第三电连接,在所述引线框的第一栅极引线和每个高侧功率晶体管管芯的栅极端子之间;以及第四电连接,在所述引线框的第二栅极引线和每个低侧功率晶体管管芯的栅极端子之间,其中,所述第三电连接在所述高侧功率晶体管管芯的所述栅极端子之间相对于所述第一电连接垂直延伸,其中,所述第四电连接在所述低侧功率晶体管管芯的所述栅极端子之间相对于所述第二电连接垂直延伸。
示例18。根据示例13至17中任意一个所述的功率半导体模块,其中,所述第一电连接包括多个第一带状结合,并且其中,所述第二电连接包括多个第二带状结合。
示例19。根据示例13至18中任意一个所述的功率半导体模块,其中,所述多个高侧功率晶体管管芯包括第一IGBT(绝缘栅双极晶体管)管芯,其中,所述多个低侧功率晶体管管芯包括第二IGBT管芯,并且其中,所述功率半导体模块还包括:第一多个功率二极管管芯,附接到所述第一管芯焊盘并且经由所述第一管芯焊盘和所述第一电连接与所述第一IGBT管芯反并联电耦合;以及第二多个功率二极管管芯,附接到所述第二管芯焊盘并且经由所述第二管芯焊盘和所述第二电连接与所述第二IGBT管芯反并联电耦合。
示例20。根据示例13至19中任意一个所述的功率半导体模块,还包括:热沉,在所述引线框的背离所述高侧功率晶体管管芯和所述低侧功率晶体管管芯的一侧热耦合到所述第一管芯焊盘、所述第二管芯焊盘和所述第一连接区域并与所述第一管芯焊盘、所述第二管芯焊盘和所述第一连接区域电绝缘。
示例21。根据示例13至20中任意一个所述的功率半导体模块,其中,在所述第一方向上测量时,所述第一连接区域比所述第一管芯焊盘和所述第二管芯焊盘窄。
示例22。根据示例13至21中任意一个所述的功率半导体模块,其中,所述高侧功率晶体管管芯在第一行中附接到所述第一管芯焊盘,其中,所述低侧功率晶体管管芯在平行于所述第一行的第二行中附接到所述第二管芯焊盘,并且其中,所述负DC引线的所述第一连接区域在平行于所述第一行和所述第二行的方向上纵向延伸。
诸如“第一”、“第二”等之类的术语用于描述各种元件、区域、部分等,并且也不意图是限制性的。在整个说明书中,相似的术语指代相似的元件。
如本文中所使用的,术语“具有”、“含有”、“包含”、“包括”等是开放式术语,其指示所陈述的元件或特征的存在,但是不排除其他元件或特征。除非上下文另外明确指出,否则冠词“一”、“一个”和“该”旨在包括复数和单数。
应当理解,除非另外特别指出,否则本文所述的各个实施例的特征可以彼此组合。
尽管这里已经示出和描述了特定的实施例,但是本领域的普通技术人员将理解,在不脱离本发明的范围的情况下,各种替代的和/或等效的实现方式可以代替所示出和描述的特定的实施例。本申请旨在覆盖本文所讨论的特定实施例的任何改编或变型。因此,意图本发明仅由权利要求及其等同物限制。
Claims (22)
1.一种功率半导体模块,包括:
引线框,包括第一管芯焊盘、与所述第一管芯焊盘分离的第二管芯焊盘、形成为所述第一管芯焊盘的延伸部的第一电源引线、与所述第一管芯焊盘和所述第二管芯焊盘分离的第二电源引线、以及形成为所述第二电源引线的延伸部且与所述第二管芯焊盘并排的第一连接区域;
第一多个功率半导体管芯,附接到所述第一管芯焊盘并且并联电耦合;
第二多个功率半导体管芯,附接到所述第二管芯焊盘并且并联电耦合;
第一电连接,在第一方向上在所述第一多个功率半导体管芯和所述第二管芯焊盘之间延伸;以及
第二电连接,在所述第一方向上在所述第二多个功率半导体管芯和所述第一连接区域之间延伸。
2.根据权利要求1所述的功率半导体模块,其中,所述第一管芯焊盘、所述第二管芯焊盘和所述第一连接区域设置成行,并且其中,所述第二管芯焊盘介于所述第一管芯焊盘和所述第一连接区域之间。
3.根据权利要求1所述的功率半导体模块,其中,所述第一管芯焊盘、所述第二管芯焊盘和所述第一连接区域设置成行,并且其中,所述第一连接区域介于所述第一管芯焊盘和所述第二管芯焊盘之间。
4.根据权利要求1所述的功率半导体模块,其中,第二连接区域形成为所述第二管芯焊盘的延伸部,其中,所述第一电连接接触所述第二连接区域,并且其中,所述第一连接区域设置在所述第二管芯焊盘和所述第二连接区域之间的间隙中。
5.根据权利要求1所述的功率半导体模块,其中,所述第一多个功率半导体管芯包括第一功率晶体管管芯,其中,所述第二多个功率半导体管芯包括第二功率晶体管管芯,其中,所述第一功率晶体管管芯和所述第二功率晶体管管芯电耦合成半桥结构,并且其中,所述引线框还包括第一栅极引线、第二栅极引线和形成为所述第二管芯焊盘的延伸部的输出引线。
6.根据权利要求5所述的功率半导体模块,还包括:
第三电连接,在所述引线框的所述第一栅极引线和每个第一功率晶体管管芯的栅极端子之间;以及
第四电连接,在所述引线框的所述第二栅极引线和每个第二功率晶体管管芯的栅极端子之间,
其中,所述第三电连接在所述第一功率晶体管管芯的所述栅极端子之间相对于所述第一电连接垂直延伸,
其中,所述第四电连接在所述第二功率晶体管管芯的所述栅极端子之间相对于所述第二电连接垂直延伸。
7.根据权利要求5所述的功率半导体模块,其中,所述第一功率晶体管管芯在第一行中附接到所述第一管芯焊盘,其中,所述第二功率晶体管管芯在平行于所述第一行的第二行中附接到所述第二管芯焊盘,并且其中,所述第二电源引线的所述第一连接区域在平行于所述第一行和所述第二行的方向上纵向延伸。
8.根据权利要求1所述的功率半导体模块,其中,所述第一多个功率半导体管芯包括第一功率二极管管芯,并且其中,所述第二多个功率半导体管芯包括第二功率二极管管芯。
9.根据权利要求1所述的功率半导体模块,其中,所述第一电连接包括多个第一带状结合,并且其中,所述第二电连接包括多个第二带状结合。
10.根据权利要求1所述的功率半导体模块,其中,所述第一多个功率半导体管芯包括第一IGBT(绝缘栅双极晶体管)管芯,其中,所述第二多个功率半导体管芯包括第二IGBT管芯,并且其中,所述功率半导体模块还包括:
第一多个功率二极管管芯,附接到所述第一管芯焊盘并且经由所述第一管芯焊盘和所述第一电连接与所述第一IGBT管芯反并联电耦合;以及
第二多个功率二极管管芯,附接到所述第二管芯焊盘并且经由所述第二管芯焊盘和所述第二电连接与所述第二IGBT管芯反并联电耦合。
11.根据权利要求1所述的功率半导体模块,还包括:
热沉,在所述引线框的背离所述功率半导体管芯的一侧热耦合到所述第一管芯焊盘、所述第二管芯焊盘和所述第一连接区域并与所述第一管芯焊盘、所述第二管芯焊盘和所述第一连接区域电绝缘。
12.根据权利要求1所述的功率半导体模块,其中,在所述第一方向上测量时,所述第一连接区域比所述第一管芯焊盘和所述第二管芯焊盘窄。
13.一种功率半导体模块,包括:
引线框,包括第一管芯焊盘、与所述第一管芯焊盘分离的第二管芯焊盘、形成为所述第一管芯焊盘的延伸部的正DC引线、负DC引线、相输出引线、以及形成为所述负DC引线的延伸部且与所述第二管芯焊盘并排的第一连接区域;
多个高侧功率晶体管管芯,附接到所述第一管芯焊盘并且并联电耦合;
多个低侧功率晶体管管芯,附接到所述第二管芯焊盘并且并联电耦合;
第一电连接,在第一方向上在所述多个高侧功率晶体管管芯和所述第二管芯焊盘之间延伸;以及
第二电连接,在所述第一方向上在所述多个低侧功率晶体管管芯和所述第一连接区域之间延伸,
其中,所述多个高侧功率晶体管管芯和所述多个低侧功率晶体管管芯电耦合成半桥结构,所述半桥结构具有经由所述相输出引线可访问的开关节点。
14.根据权利要求13所述的功率半导体模块,其中,所述第一管芯焊盘、所述第二管芯焊盘和所述第一连接区域设置成行,并且其中,所述第二管芯焊盘介于所述第一管芯焊盘和所述第一连接区域之间。
15.根据权利要求13所述的功率半导体模块,其中,所述第一管芯焊盘、所述第二管芯焊盘和所述第一连接区域设置成行,并且其中,所述第一连接区域介于所述第一管芯焊盘和所述第二管芯焊盘之间。
16.根据权利要求13所述的功率半导体模块,其中,第二连接区域形成为所述第二管芯焊盘的延伸部,其中,所述第一电连接接触所述第二连接区域,并且其中,所述第一连接区域设置在所述第二管芯焊盘和所述第二连接区域之间的间隙中。
17.根据权利要求13所述的功率半导体模块,还包括:
第三电连接,在所述引线框的第一栅极引线和每个高侧功率晶体管管芯的栅极端子之间;以及
第四电连接,在所述引线框的第二栅极引线和每个低侧功率晶体管管芯的栅极端子之间,
其中,所述第三电连接在所述高侧功率晶体管管芯的所述栅极端子之间相对于所述第一电连接垂直延伸,
其中,所述第四电连接在所述低侧功率晶体管管芯的所述栅极端子之间相对于所述第二电连接垂直延伸。
18.根据权利要求13所述的功率半导体模块,其中,所述第一电连接包括多个第一带状结合,并且其中,所述第二电连接包括多个第二带状结合。
19.根据权利要求13所述的功率半导体模块,其中,所述多个高侧功率晶体管管芯包括第一IGBT(绝缘栅双极晶体管)管芯,其中,所述多个低侧功率晶体管管芯包括第二IGBT管芯,并且其中,所述功率半导体模块还包括:
第一多个功率二极管管芯,附接到所述第一管芯焊盘并且经由所述第一管芯焊盘和所述第一电连接与所述第一IGBT管芯反并联电耦合;以及
第二多个功率二极管管芯,附接到所述第二管芯焊盘并且经由所述第二管芯焊盘和所述第二电连接与所述第二IGBT管芯反并联电耦合。
20.根据权利要求13所述的功率半导体模块,还包括:
热沉,在所述引线框的背离所述高侧功率晶体管管芯和所述低侧功率晶体管管芯的一侧热耦合到所述第一管芯焊盘、所述第二管芯焊盘和所述第一连接区域并与所述第一管芯焊盘、所述第二管芯焊盘和所述第一连接区域电绝缘。
21.根据权利要求13所述的功率半导体模块,其中,在所述第一方向上测量时,所述第一连接区域比所述第一管芯焊盘和所述第二管芯焊盘窄。
22.根据权利要求13所述的功率半导体模块,其中,所述高侧功率晶体管管芯在第一行中附接到所述第一管芯焊盘,其中,所述低侧功率晶体管管芯在平行于所述第一行的第二行中附接到所述第二管芯焊盘,并且其中,所述负DC引线的所述第一连接区域在平行于所述第一行和所述第二行的方向上纵向延伸。
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US6933593B2 (en) * | 2003-08-14 | 2005-08-23 | International Rectifier Corporation | Power module having a heat sink |
US7298027B2 (en) * | 2004-09-02 | 2007-11-20 | International Rectifier Corporation | SMT three phase inverter package and lead frame |
CN102340233B (zh) * | 2010-07-15 | 2014-05-07 | 台达电子工业股份有限公司 | 功率模块 |
US20210202439A1 (en) * | 2019-12-26 | 2021-07-01 | Industrial Technology Research Institute | High power module |
US11682611B2 (en) | 2020-06-22 | 2023-06-20 | Infineon Technologies Ag | Power semiconductor module |
-
2020
- 2020-06-22 US US16/907,734 patent/US11682611B2/en active Active
-
2021
- 2021-06-18 DE DE102021115824.9A patent/DE102021115824A1/de active Pending
- 2021-06-22 CN CN202110689821.0A patent/CN113903728A/zh active Pending
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US11682611B2 (en) | 2023-06-20 |
US20210398887A1 (en) | 2021-12-23 |
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