CN113891200A - Packaging structure of microphone - Google Patents
Packaging structure of microphone Download PDFInfo
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- CN113891200A CN113891200A CN202111123728.XA CN202111123728A CN113891200A CN 113891200 A CN113891200 A CN 113891200A CN 202111123728 A CN202111123728 A CN 202111123728A CN 113891200 A CN113891200 A CN 113891200A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 37
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 56
- 239000010703 silicon Substances 0.000 claims abstract description 56
- 230000000149 penetrating effect Effects 0.000 claims abstract description 11
- 229910000679 solder Inorganic materials 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 3
- 238000013461 design Methods 0.000 abstract description 12
- 230000009286 beneficial effect Effects 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 33
- 230000000306 recurrent effect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R1/00—Details of transducers, loudspeakers or microphones
- H04R1/08—Mouthpieces; Microphones; Attachments therefor
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
Abstract
The embodiment of the application discloses a packaging structure of a microphone, which comprises an ASIC chip, an MEMS chip, a first rewiring layer and a second rewiring layer; the ASIC chip is provided with a first rewiring layer distributed along the surface of the ASIC chip, and the ASIC chip is provided with a first silicon through hole penetrating through the thickness direction; the MEMS chip is provided with a second rewiring layer distributed along the surface of the MEMS chip, and the MEMS chip is provided with a second through silicon via penetrating through the thickness direction; the ASIC chip is stacked on the MEMS chip; the ASIC chip is interconnected with the MEMS chip through the first redistribution layer, the first through-silicon via, the second redistribution layer, and the second through-silicon via. The packaging structure of the microphone is simple in structure and beneficial to miniaturization design of the microphone.
Description
Technical Field
The application belongs to the technical field of microphone encapsulation, and specifically relates to an encapsulation structure of a microphone.
Background
With the rapid development of the semiconductor industry, microphones have been widely used in various electronic products in the consumer field, wherein silicon microphones have been widely used in mobile terminals due to their small size and strong stability. The silicon microphone includes a MEMS (Micro Electro Mechanical System) chip, and the MEMS chip includes a silicon diaphragm and a silicon back plate. The MEMS chip has the working principle that the silicon diaphragm is interfered by sound pressure to deform by utilizing the pressure gradient generated by sound change, so that the capacitance value between the silicon diaphragm and the silicon back plate is changed, and a sound pressure signal is converted into a voltage signal. Compared with the traditional microphone, the silicon microphone has the advantages of lightness, thinness, shortness, electricity saving and price, so the silicon microphone is widely applied to electronic products such as mobile phones, tablet computers and the like.
At present, for a small-sized silicon microphone, a containing cavity formed by a PCB and a shell has a small volume, and a MEMS chip and an ASIC chip are both arranged in the containing cavity and are respectively fixed on the PCB. The MEMS chip and the ASIC chip have certain heights, and the MEMS chip is higher than the ASIC chip. The two are arranged on the PCB board in parallel, which causes waste of partial space in the accommodating cavity and is not beneficial to the miniaturization design of the silicon microphone.
Disclosure of Invention
An object of the embodiments of the present application is to provide a new technical solution for a packaging structure of a microphone.
According to an embodiment of the present application, there is provided a package structure of a microphone, the package structure of the microphone including an ASIC chip, a MEMS chip, a first rewiring layer, and a second rewiring layer;
the ASIC chip is provided with a first rewiring layer distributed along the surface of the ASIC chip, and the ASIC chip is provided with a first silicon through hole penetrating through the thickness direction;
the MEMS chip is provided with a second rewiring layer distributed along the surface of the MEMS chip, and the MEMS chip is provided with a second through silicon via penetrating through the thickness direction;
the ASIC chip is superposed on the MEMS chip, and the axis of the second through silicon via is superposed with the axis of the first through silicon via;
the ASIC chip is interconnected with the MEMS chip through the first redistribution layer, the first through-silicon via, the second redistribution layer, and the second through-silicon via.
Optionally, the first through silicon via and the second through silicon via are both filled with a copper electroplating layer.
Optionally, the ASIC chip includes opposing first and second surfaces, the first through-silicon-via penetrating the first and second surfaces;
a first re-wiring layer is disposed on both the first surface and the second surface.
Optionally, the packaging structure of the microphone further includes a first insulating layer, the first surface and the second surface are covered with the first insulating layer respectively, and the first rewiring layer is disposed on the first insulating layer.
Optionally, the MEMS chip comprises third and fourth opposing surfaces, and the second through-silicon-via penetrates the third and fourth surfaces;
second rewiring layers are disposed on both the third surface and the fourth surface.
Optionally, the packaging structure of the microphone further includes a second insulating layer, the second insulating layer covers the third surface and the fourth surface respectively, and the second redistribution layer is disposed on the second insulating layer.
Optionally, a groove is arranged on the surface of the ASIC chip close to the MEMS chip, and the groove is communicated with the back cavity of the MEMS chip.
Optionally, the first redistribution layer is bonded to the second redistribution layer.
Optionally, the packaging structure of the microphone further includes solder balls;
and a second rewiring layer is arranged on the surface of the MEMS chip far away from the ASIC chip, and the solder balls are implanted on the second rewiring layer.
Optionally, the first redistribution layer is electrically connected to the second redistribution layer through metal conductive pillars.
Optionally, a surface of the ASIC chip remote from the MEMS chip is provided with a bonding point, and the bonding point is electrically connected to the first redistribution layer.
One technical effect of the embodiment of the application is as follows: by providing a first rewiring layer and a first through-silicon via on the ASIC chip, and by providing a second rewiring layer and a second through-silicon via on the MEMS chip; then, the ASIC chip is stacked on the MEMS chip. The ASIC chip and the MEMS chip are interconnected through the first rewiring layer, the first silicon through hole, the second rewiring layer and the second silicon through hole, the structural design is reasonable, the circuit connection mode is very simple, and therefore the microphone structure can be packaged quickly. Meanwhile, the stability of circuit connection of the packaging structure of the microphone is high, and the microphone is favorably ensured to have high acoustic performance.
In addition, the ASIC chip and the MEMS chip are overlapped, so that the assembly volumes of the ASIC chip and the MEMS chip are effectively reduced, the internal space of the microphone is fully utilized, and the miniaturization design of the microphone is facilitated.
Further features of the present application and advantages thereof will become apparent from the following detailed description of exemplary embodiments thereof, which is to be read in connection with the accompanying drawings.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments of the application and together with the description, serve to explain the principles of the application.
Fig. 1 is a schematic diagram of a packaging structure of a microphone according to an embodiment of the present disclosure.
Wherein: in the figure: 1. an ASIC chip; 2. an MEMS chip; 31. a first rewiring layer; 32. a second rewiring layer; 41. a first through-silicon-via; 42. a second through-silicon-via; 51. a first insulating layer; 52. a second insulating layer; 6. tin balls; 7. and (7) a gasket.
Detailed Description
Various exemplary embodiments of the present application will now be described in detail with reference to the accompanying drawings. It should be noted that: the relative arrangement of the components and steps, the numerical expressions, and numerical values set forth in these embodiments do not limit the scope of the present application unless specifically stated otherwise.
The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the application, its application, or uses.
Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate.
In all examples shown and discussed herein, any particular value should be construed as merely illustrative, and not limiting. Thus, other examples of the exemplary embodiments may have different values.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion thereof is not required in subsequent figures.
As shown in fig. 1, the present embodiment provides a packaging structure of a microphone, which has a reasonable design, reduces the volume of the packaging structure of the microphone, facilitates the miniaturization design of the microphone, and improves the electrical connection performance of the microphone.
Specifically, the packaging structure of the microphone includes an ASIC chip 1, a MEMS chip 2, a first rewiring layer 31, and a second rewiring layer 32.
In the packaging structure of the microphone, the capacitance of the MEMS chip 2 changes correspondingly with the change of the transmitted sound, and then the ASIC chip 1 is used for processing and outputting the changed capacitance signal so as to realize the sound pickup.
Further specifically, the ASIC chip 1 is provided with a first rewiring layer 31 distributed along a surface of the ASIC chip 1, and the ASIC chip 1 is provided with a first through-silicon-via 41 penetrating in a thickness direction.
In the present embodiment, the MEMS chip 2 is provided with the second redistribution layer 32 distributed along the surface of the MEMS chip 2, and the MEMS chip 2 is provided with the second through-silicon via 42 penetrating the thickness direction.
It should be noted that all computing and communication systems require a power transmission system. Power delivery systems convert the high voltage of a power source to many different low voltages required by the discrete devices in the system. In the present application, the first and second redistribution layers 31 and 32, and the first and second through- silicon vias 41 and 42 serve as a power transmission system for electrically connecting the ASIC chip 1 and the MEMS chip 2 and the two chips with other devices in the microphone package structure.
The first through silicon via 41 penetrates through the thickness direction of the ASIC chip 1, and the second through silicon via 42 penetrates through the thickness direction of the MEMS chip 2, which helps to reduce the lengths of the first through silicon via 41 and the second through silicon via 42, and shortens the path of electrical connection between the ASIC chip 1 and the MEMS chip 2, thereby ensuring the stability of the electrical connection between the ASIC chip 1 and the MEMS chip 2, and on the other hand, also helping to ensure the structural strength of the ASIC chip 1 and the MEMS chip 2, so as to ensure the stability of the packaging structure of the microphone.
As shown in fig. 1, the ASIC chip 1 is stacked on the MEMS chip 2, and the second through-silicon via 42 coincides with the axis of the first through-silicon via 41. Since the ASIC chip 1 is stacked on the MEMS chip 2, the internal volume of the microphone package structure occupied by the ASIC chip 1 and the MEMS chip 2 can be reduced, which contributes to the miniaturization of the microphone package structure.
The second through silicon via 42 coincides with the axis of the first through silicon via 41, on one hand, the rapid assembly between the ASIC chip 1 and the MEMS chip 2 is facilitated, the ASIC chip 1 is accurately stacked on the MEMS chip 2, and the stable connection between the ASIC chip 1 and the MEMS chip 2 is facilitated; on the other hand, the wiring length along the ASIC chip 1 and the MEMS chip 2 is reduced, the cost is saved, the stability of the electrical connection between the ASIC chip 1 and the MEMS chip 2 can be ensured, and the stability of the function of the packaging structure of the microphone is also ensured.
The ASIC chip 1 is interconnected with the MEMS chip 2 through the first rewiring layer 31, the first through-silicon via 41, the second rewiring layer 32, and the second through-silicon via 42.
The first rewiring layer 31, the first through-silicon via 41, the second rewiring layer 32 and the second through-silicon via 42 realize the electrical connection between the ASIC chip 1 and the MEMS chip 2, so that the ASIC chip 1 can accurately process and output the changed capacitance signal output by the MEMS chip 2 to pick up sound, and also contribute to ensuring the performance stability of the ASIC chip 1 and the MEMS chip 2. Meanwhile, the packaging structure of the microphone does not need to be additionally provided with a circuit board to realize the electrical connection between the ASIC chip 1 and the MEMS chip 2, even the electrical connection between the two chips and other devices, so that the packaging structure of the microphone is further simplified, the packaging structure of the microphone can be further reduced, and the miniaturization design of the packaging structure of the microphone is facilitated.
Therefore, in the present embodiment, by providing the first rewiring layer 31 and the first through-silicon via 41 on the ASIC chip 1, and by providing the second rewiring layer 32 and the second through-silicon via 42 on the MEMS chip 2; then, the ASIC chip 1 is stacked on the MEMS chip 2. The ASIC chip 1 and the MEMS chip 2 are interconnected through the first rewiring layer 31, the first silicon through hole 41, the second rewiring layer 32 and the second silicon through hole 42, the structural design is reasonable, the circuit connection mode is very simple, and therefore the microphone structure can be packaged quickly. Meanwhile, the stability of circuit connection of the packaging structure of the microphone is high, and the microphone is favorably ensured to have high acoustic performance.
In addition, the ASIC chip 1 and the MEMS chip 2 are overlapped, so that the assembly volume of the ASIC chip and the MEMS chip is effectively reduced, the internal space of the microphone is fully utilized, and the miniaturization design of the microphone is facilitated.
Optionally, the first through-silicon via 41 and the second through-silicon via 42 are both filled with a copper electroplating layer.
In this embodiment, the first through-silicon-via 41 and the second through-silicon-via 42 are both filled with copper plating layers, which ensures stable electrical connection between the ASIC chip 1 and the MEMS chip 2.
It should be noted that other metals may be filled in the first through silicon via 41 and the second through silicon via 42, as long as the electrical connection between the ASIC chip 1 and the MEMS chip 2 can be achieved through the metals filled in the first through silicon via 41 and the second through silicon via 42, and the metals filled in the first through silicon via 41 and the second through silicon via 42 are not specifically limited in the present application.
Optionally, the ASIC chip 1 includes opposite first and second surfaces, and the first through-silicon-via 41 penetrates through the first and second surfaces.
A first re-wiring layer 31 is provided on both the first surface and the second surface.
In this embodiment, the first rewiring layer 31 is provided on the first surface and the second surface, which is not only simple in arrangement and easy to process and assemble, but also facilitates electrical connection between the ASIC chip 1 and the MEMS chip 2, and electrical connection between the ASIC chip 1 and other devices.
Optionally, the packaging structure of the microphone further includes a first insulating layer 51, the first surface and the second surface are covered with the first insulating layer 51, respectively, and the first rewiring layer 31 is disposed on the first insulating layer 51.
In this embodiment, the first insulating layer 51 functions as an insulator for achieving an insulating effect between the first redistribution layers, thereby contributing to ensuring functional stability of the first redistribution layers, contributing to achieving stability of electrical connection between the ASIC chip 1 and the MEMS chip 2, and contributing to achieving stability of electrical connection between the ASIC chip 1 and other devices.
The first repeating wiring layer is fixed on the first insulating layer 51 by exposure, development and electroplating.
Optionally, the MEMS chip 2 includes a third surface and a fourth surface opposite to each other, and the second through-silicon-via 42 penetrates through the third surface and the fourth surface.
A second re-wiring layer 32 is provided on both the third surface and the fourth surface.
In this embodiment, the second redistribution layers 32 are provided on the third surface and the fourth surface, which is not only simple in arrangement and easy to process and assemble, but also advantageous in achieving electrical connection between the MEMS chip 2 and the ASIC chip 1, and also advantageous in achieving electrical connection between the MEMS chip 2 and other devices.
Optionally, the package structure of the microphone further includes a second insulating layer 52, the second insulating layer 52 covers the third surface and the fourth surface, respectively, and the second redistribution layer 32 is disposed on the second insulating layer 52.
In this embodiment, the second insulating layer 52 serves as an insulator for achieving an insulating effect between the second recurrent wiring layers, thereby contributing to ensuring functional stability of the second recurrent wiring layers, contributing to achieving stability of electrical connection between the MEMS chip 2 and the ASIC chip 1, and contributing to achieving stability of electrical connection between the MEMS chip 2 and other devices.
The second recurring wiring layer is fixed on the second insulating layer 52 by exposure, development, and plating.
Optionally, the first insulating layer 51 and the second insulating layer 52 are made of polyimide, which not only has a good insulating effect, but also is conveniently disposed on the MEMS chip 2 and the ASIC chip 1.
Optionally, a spacer 7 is provided between the ASIC chip 1 and the first recurrent wiring layer, and a spacer 7 is also provided between the MEMS chip 2 and the second recurrent wiring layer, the spacer 7 supporting the first recurrent wiring layer and the second recurrent wiring layer. Preferably, the gasket 7 is made of aluminum, and the aluminum material is soft, so that the gasket has a good buffering effect and can better protect the first recurring wiring layer and the second recurring wiring layer.
Optionally, a groove is disposed on a surface of the ASIC chip 1 close to the MEMS chip 2, and the groove is communicated with the back cavity of the MEMS chip 2.
In this embodiment, the recess provided on the ASIC chip 1 effectively increases the back cavity of the MEMS chip 2, thereby improving the sensitivity and frequency response of the MEMS microphone, and helping to ensure the stability of the acoustic performance of the packaging structure of the microphone, and the design of the recess is simpler, which is beneficial to saving the cost.
Optionally, the first redistribution layer 31 is bonded to the second redistribution layer 32. This makes the electrical connection of the first rewiring layer 31 and the second rewiring layer 32 very simple, facilitates the assembly between the MEMS chip 2 and the ASIC chip 1, and has higher stability of the connection therebetween.
Optionally, the package structure of the microphone further includes solder balls 6; a second rewiring layer 32 is arranged on the surface of the MEMS chip 2 far away from the ASIC chip 1, and the solder balls 6 are implanted on the second rewiring layer 32.
In this embodiment, the solder balls 6 facilitate electrical connection between the MEMS chip 2 and other devices, and the connection stability is high. But also facilitates rapid assembly of the MEMS chip 2 and other devices.
Alternatively, the first redistribution layer 31 is electrically connected to the second redistribution layer 32 through metal conductive pillars.
In this embodiment, the connection between the first rewiring layer 31 and the second rewiring layer 32 is very simple, and the electrical connection between the MEMS chip 2 and the ASIC chip 1 is facilitated.
Optionally, a surface of the ASIC chip 1 remote from the MEMS chip 2 is provided with a bonding point, and the bonding point is electrically connected to the first redistribution layer 31.
In this embodiment, the electrical connection between the ASIC chip 1 and other devices in the packaging structure of the microphone is facilitated by the bonding points, and the connection manner is relatively simple; and the assembly mode of the packaging structure of the microphone is simplified, the cost is saved, the size of the packaging structure of the microphone is further reduced, and the miniaturization design of the packaging structure of the microphone is realized.
In the embodiment, the packaging structure of the microphone is simple in structure, and is beneficial to the miniaturization design of the microphone.
Although some specific embodiments of the present application have been described in detail by way of example, it should be understood by those skilled in the art that the above examples are for illustrative purposes only and are not intended to limit the scope of the present application. It will be appreciated by those skilled in the art that modifications may be made to the above embodiments without departing from the scope and spirit of the present application. The scope of the application is defined by the appended claims.
Claims (11)
1. A packaging structure of a microphone is characterized by comprising an ASIC chip (1), a MEMS chip (2), a first rewiring layer (31) and a second rewiring layer (32);
the ASIC chip (1) is provided with a first rewiring layer (31) distributed along the surface of the ASIC chip (1), and the ASIC chip (1) is provided with a first through-silicon-via (41) penetrating through the thickness direction;
the MEMS chip (2) is provided with a second rewiring layer (32) distributed along the surface of the MEMS chip (2), and the MEMS chip (2) is provided with a second through silicon via (42) penetrating through the thickness direction;
the ASIC chip (1) is superposed on the MEMS chip (2), and the axis of the second through silicon via (42) is coincident with the axis of the first through silicon via (41);
the ASIC chip (1) is interconnected with the MEMS chip (2) through the first rewiring layer (31), the first through-silicon-via (41), the second rewiring layer (32), and the second through-silicon-via (42).
2. The microphone package structure of claim 1, wherein the first through-silicon-via (41) and the second through-silicon-via (42) are filled with copper plating.
3. The packaging structure of a microphone according to claim 1, wherein the ASIC chip (1) comprises a first surface and a second surface opposite to each other, the first through-silicon-via (41) penetrating the first surface and the second surface;
a first re-wiring layer (31) is provided on both the first surface and the second surface.
4. The microphone package structure of claim 3, further comprising:
a first insulating layer (51), the first surface and the second surface being covered with the first insulating layer (51), respectively, the first re-wiring layer (31) being disposed on the first insulating layer (51).
5. The packaging structure of a microphone according to claim 1, characterized in that the MEMS chip (2) comprises a third surface and a fourth surface opposite to each other, the second through-silicon-via (42) penetrating through the third surface and the fourth surface;
a second re-wiring layer (32) is disposed on both the third surface and the fourth surface.
6. The packaging structure of the microphone according to claim 5, further comprising a second insulating layer (52), wherein the second insulating layer (52) covers the third surface and the fourth surface, respectively, and the second rewiring layer (32) is disposed on the second insulating layer (52).
7. The packaging structure of a microphone according to claim 1, characterized in that the surface of the ASIC chip (1) close to the MEMS chip (2) is provided with a groove, which communicates with the back cavity of the MEMS chip (2).
8. The packaging structure of a microphone according to claim 1, wherein the first rewiring layer (31) is bonded to the second rewiring layer (32).
9. The packaging structure of microphone according to claim 1, further comprising solder balls (6);
and a second rewiring layer (32) is arranged on the surface, far away from the ASIC chip (1), of the MEMS chip (2), and the solder balls (6) are implanted on the second rewiring layer (32).
10. The packaging structure of a microphone according to claim 1, wherein the first re-wiring layer (31) is electrically connected to the second re-wiring layer (32) through metal conductive pillars.
11. Packaging structure for a microphone according to claim 1, characterized in that the surface of the ASIC chip (1) remote from the MEMS chip (2) is provided with bond pads, which are electrically connected with the first rewiring layer (31).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111123728.XA CN113891200A (en) | 2021-09-24 | 2021-09-24 | Packaging structure of microphone |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111123728.XA CN113891200A (en) | 2021-09-24 | 2021-09-24 | Packaging structure of microphone |
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| CN113891200A true CN113891200A (en) | 2022-01-04 |
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| CN212292788U (en) * | 2020-05-20 | 2021-01-05 | 华景科技无锡有限公司 | Wafer-level packaging structure of micro-electro-mechanical system microphone |
| CN212435928U (en) * | 2020-07-27 | 2021-01-29 | 迈感微电子(上海)有限公司 | Microphone of micro-electro-mechanical system |
| CN213694149U (en) * | 2020-12-18 | 2021-07-13 | 青岛歌尔智能传感器有限公司 | MEMS chip, MEMS microphone and electronic equipment |
| CN112520686A (en) * | 2020-12-25 | 2021-03-19 | 华景科技无锡有限公司 | MEMS microphone wafer level packaging structure |
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