CN113889553A - 一种GaInP/GaInAs/Ge太阳电池一次湿法台阶刻蚀工艺 - Google Patents
一种GaInP/GaInAs/Ge太阳电池一次湿法台阶刻蚀工艺 Download PDFInfo
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Abstract
本发明公开了一种GaInP/GaInAs/Ge太阳电池一次湿法台阶刻蚀工艺,属于太阳电池技术领域,包括:S1、对晶圆进行预烘;S2、在晶圆表面涂覆用于图形转移的光刻胶;S3、对晶圆进行前烘处理;S4、对晶圆进行曝光,将掩膜版上的台阶图形转移至光刻胶胶膜上;S5、将胶膜上潜在的图形通过显影技术制备出来;S6、将所述晶圆在高温下坚膜;S7、将所述晶圆在一次湿法刻蚀液中进行ⅢⅤ族有源层刻蚀,形成台阶结构;S8、所述晶圆通过去胶清洗工艺完成一次湿法台阶刻蚀工艺全过程。本发明辅以光刻、显影、刻蚀和清洗工艺的简单、高效、低成本制备台阶工艺技术。
Description
技术领域
本发明属于太阳电池技术领域,具体涉及一种GaInP/GaInAs/Ge太阳电池一次湿法台阶刻蚀工艺。
背景技术
采用金刚石砂轮切割的GaInP/GaInAs/Ge太阳电池切割面侧壁存在大量的晶格损伤缺陷,由晶格缺陷形成的少子复合中心暴露出严重的边缘缺陷漏电问题。通过光刻技术制备划片槽光刻掩蔽图形,继而通过干法或湿法刻蚀技术刻蚀半导体有源层形成划片槽台阶(见图1),由于刻蚀的划片槽侧壁与砂轮划片工艺相比更加光滑,由晶格缺陷形成的少子复合中心密度更低,因此通过光刻、刻蚀形成划片槽的GaInP/GaInAs/Ge太阳电池单体具有更好的光电转换性能。此外,GaInP/GaInAs/Ge太阳电池有源层制作过程一般通过外延生长工艺形成,晶圆片的边缘会存在宽度大约1.5mm左右的晶格缺陷,当电池边角靠近晶圆片边缘时制造过程极易触及边缘缺陷位置引发短路造成良率下降,通过刻蚀工艺将边缘的缺陷层去掉形成台阶边缘(见图2)可以很好地避免这个问题,提升产品的良率。
由于市场的需要,部分电池需要在GaInP/GaInAs/Ge太阳电池上进行单元隔离,比如制备带有旁路二极管的整体二极管GaInP/GaInAs/Ge太阳电池或者激光供能微电池,通常采用光刻技术和刻蚀技术形成台阶隔离槽进行单元隔离来实现功能需求。
由于GaInP/GaInAs/Ge太阳电池成分比较复杂,湿法台阶刻蚀多采用交替刻蚀工艺(如H2SO4、H2O2水溶液刻蚀GaAs、浓HCl刻蚀GaInP),交替刻蚀形成的台阶侧壁因选择刻蚀液刻蚀速率差异和部分刻蚀液对掩膜版的侵蚀作用会显得平整度差和参差不齐的现象;而干法刻蚀台阶工艺往往需要用到CF4、HBr、Cl2、BCl3等特气,还需要昂贵的等离子体刻蚀设备(如ICP刻蚀设备),干法台阶刻蚀工艺还需要抽真空过程,晶圆平放于反应托盘,刻蚀速率较慢(一般运行一次程序需要0.5小时左右,一次投入只有3~5片),所以干法台阶刻蚀工艺成本较高,不利于低成本批产应用。
通过检索可知,现有与“一种GaInP/GaInAs/Ge太阳电池一次湿法台阶刻蚀工艺”相关专利为:一种多结砷化镓太阳电池一次腐蚀工艺方法。申请公布号:CN 104393115 A;检索到的专利涉及的工艺方法光刻工艺制备划片槽和隔离槽,通过HNO3、HBr、缓冲液实现一次腐蚀划片槽和隔离槽。
该工艺存在如下不足:①HNO3、HBr溶液温度难以控制、批产操作不容易掌握、成品率几乎无法控制;②HNO3、HBr溶液对Ge衬底腐蚀性较强,由于腐蚀时间不好掌握,实际对Ge的腐蚀时间和衬底厚度控制不准,衬底的形貌控制不好,对下电极产生负面影响;③刻蚀液中缓冲剂虽未明述,但该刻蚀液不可使用有机醇类,因为HNO3和有机醇之间会发生酯化反应,只能为冰乙酸类缓冲剂,该缓冲剂低温刻蚀速率极低,稍高则会剧烈发烟,不适于批产。
发明内容
本发明为解决公知技术中存在的技术问题,提供一种GaInP/GaInAs/Ge太阳电池一次湿法台阶刻蚀工艺,辅以光刻、显影、刻蚀和清洗工艺的简单、高效、低成本制备台阶工艺技术。
本发明的目的是提供一种GaInP/GaInAs/Ge太阳电池一次湿法台阶刻蚀工艺,依次包括如下工序:
S1、对晶圆进行预烘;
S2、在所述晶圆表面涂覆用于图形转移的光刻胶;
S3、对所述晶圆进行前烘处理;
S4、对所述晶圆进行曝光,将掩膜版上的台阶图形转移至光刻胶胶膜上;
S5、将胶膜上潜在的图形通过显影技术制备出来;
S6、将所述晶圆在高温下坚膜;
S7、将所述晶圆在一次湿法刻蚀液中进行ⅢⅤ族有源层刻蚀,形成台阶结构;
S8、所述晶圆通过去胶清洗工艺完成一次湿法台阶刻蚀工艺全过程。
优选地,在S1中,将GaInP/GaInAs/Ge太阳电池晶圆片装入花篮,并放入温度设置为150℃±10℃的烘箱中烘烤20min±2min。
优选地,在S2中,光刻胶厚度为5~8μm。
优选地,在S3中,将带有胶膜的晶圆片进行高温烘烤,烘烤温度范围是80℃~100℃。
优选地,在S4中,将烘烤好的晶圆片在载有台阶刻蚀图形的掩膜版下逐一进行曝光,曝光时间的范围是5~15s。
优选地,在S5中,将已经曝光的晶圆片放入显影液中显影,显影时间20~50s;显影完成的晶圆片通过高纯水多次冲洗后甩干脱水,高纯水的电阻率不小于18MΩ。
优选地,在S6中,将显影清洗后的晶圆片放入120℃±5℃烘箱中烘烤20~30min。
优选地,在S7中,坚膜后的晶圆片放入一次湿法刻蚀液(HBr、H2O2、缓冲剂、H2O混合液)中,刻蚀2~3min,刻蚀槽露出Ge界面为止;刻蚀完成的晶圆片通过高纯水多次冲洗后甩干脱水,高纯水的电阻率不小于18MΩ。
优选地,在S8中,将已经刻蚀好的晶圆片放入去胶液中去胶,再通过高纯水多次冲洗后甩干脱水,高纯水的电阻率不小于18MΩ。
本发明具有的优点和积极效果是:
本发明通过光刻、显影工艺制备划片槽(或隔离槽)胶膜图形,继而通过HBr、H2O2、缓冲剂的水溶液实现一次湿法刻蚀划片槽(或隔离槽),本刻蚀液的特点具有刻蚀速率快且可控,刻蚀液对Ge衬底几乎无破坏作用,对光刻胶适用性强(适用于正胶、负胶、反型胶),可推广应用于低成本、高质量GaInP/GaInAs/Ge太阳电池芯片工艺领域。
本发明相比于干法刻蚀,无需昂贵的刻蚀设备和特气等刻蚀材料,可以实现低成本一次完成GaInP/GaInAs/Ge太阳电池的ⅢⅤ族有源层刻蚀;湿法刻蚀工艺时间短,大约2~3min可以完成一次刻蚀,相比于干法刻蚀每次1小时(含抽真空过程和特气干法刻蚀过程)的时间更为快速;一次湿法台阶刻蚀可以实现按标准晶圆花篮投放批次刻蚀,产量更高;相比于不同刻蚀液的交替分步湿法刻蚀,一次湿法刻蚀的台阶侧壁界面更加光滑,产品性能更优异。
附图说明
图1为本发明优选实施例中GaInP/GaInAs/Ge太阳电池划片槽或隔离槽示意图;
图2为本发明优选实施例中GaInP/GaInAs/Ge太阳电池晶圆片台阶边缘示意图;
图3为本发明优选实施例中GaInP/GaInAs/Ge太阳电池一次湿法台阶刻蚀工艺流程图;
图4为本发明优选实施例中带有台阶的GaInP/GaInAs/Ge太阳电池结构示意图。
具体实施方式
为能进一步了解本发明的发明内容、特点及功效,兹例举以下实施例,并配合附图详细说明如下:
如图1至图4所示,本发明的技术方案为:
一种GaInP/GaInAs/Ge太阳电池一次湿法台阶刻蚀工艺,通过光刻工艺制备台阶刻蚀图形,然后经一次湿法刻蚀药剂实现一次完成ⅢⅤ族有源层的台阶刻蚀,形成划片槽1、隔离槽或边缘台阶等工艺结构,再通过金刚石砂轮切割或激光切割工艺完成对电池衬底的切割。图2为晶圆片台阶2边缘示意图;
依次包括:
预烘:GaInP/GaInAs/Ge太阳电池晶圆片装入花篮并放入温度设置为150℃±10℃的烘箱中烘烤20min±2min;
涂胶:将预烘好的晶圆片通过匀胶机涂覆光刻胶,光刻胶厚度5~8μm;
前烘:将带有胶膜的晶圆片进行高温烘烤,烘烤温度根据光刻胶的特性需求进行设定,范围80℃~100℃;
曝光:将烘烤好的晶圆片在载有台阶刻蚀图形的掩膜版下逐一进行曝光,曝光时间依照光刻胶种类特性进行设定,范围5~15s;
显影及清洗:将已经曝光的晶圆片放入专用显影液中显影,显影时间20~50s;显影完成的晶圆片通过高纯水(电阻率≥18MΩ)多次冲洗后甩干脱水;
坚膜:将显影清洗后的晶圆片放入120℃±5℃烘箱中烘烤20~30min;
刻蚀与清洗:坚膜后的晶圆片放入一次湿法刻蚀液(HBr、H2O2、缓冲剂、H2O混合液)中,刻蚀2~3min,刻蚀槽露出光亮的Ge界面为止;刻蚀完成的晶圆片通过高纯水(电阻率≥18MΩ)多次冲洗后甩干脱水;
去胶与清洗:将已经刻蚀好的晶圆片放入去胶液中去胶,再通过高纯水(电阻率≥18MΩ)多次冲洗后甩干脱水。
以上所述仅是对本发明的较佳实施例而已,并非对本发明作任何形式上的限制,凡是依据本发明的技术实质对以上实施例所做的任何简单修改,等同变化与修饰,均属于本发明技术方案的范围内。
Claims (9)
1.一种GaInP/GaInAs/Ge太阳电池一次湿法台阶刻蚀工艺,其特征在于,依次包括如下工序:
S1、对晶圆进行预烘;
S2、在所述晶圆表面涂覆用于图形转移的光刻胶;
S3、对所述晶圆进行前烘处理;
S4、对所述晶圆进行曝光,将掩膜版上的台阶图形转移至光刻胶胶膜上;
S5、将胶膜上潜在的图形通过显影技术制备出来;
S6、将所述晶圆在高温下坚膜;
S7、将所述晶圆在一次湿法刻蚀液中进行ⅢⅤ族有源层刻蚀,形成台阶结构;
S8、所述晶圆通过去胶清洗工艺完成一次湿法台阶刻蚀工艺全过程。
2.根据权利要求1所述的GaInP/GaInAs/Ge太阳电池一次湿法台阶刻蚀工艺,其特征在于,在S1中,将GaInP/GaInAs/Ge太阳电池晶圆片装入花篮,并放入温度设置为150℃±10℃的烘箱中烘烤20±2min。
3.根据权利要求1所述的GaInP/GaInAs/Ge太阳电池一次湿法台阶刻蚀工艺,其特征在于,在S2中,光刻胶厚度为5~8μm。
4.根据权利要求1所述的GaInP/GaInAs/Ge太阳电池一次湿法台阶刻蚀工艺,其特征在于,在S3中,将带有胶膜的晶圆进行高温烘烤,烘烤温度范围是80℃~100℃。
5.根据权利要求1所述的GaInP/GaInAs/Ge太阳电池一次湿法台阶刻蚀工艺,其特征在于,在S4中,将烘烤好的晶圆片在载有台阶刻蚀图形的掩膜版下逐一进行曝光,曝光时间的范围是5~15s。
6.根据权利要求1所述的GaInP/GaInAs/Ge太阳电池一次湿法台阶刻蚀工艺,其特征在于,在S5中,将已经曝光的晶圆片放入显影液中显影,显影时间20~50s;显影完成的晶圆片通过高纯水多次冲洗后甩干脱水,高纯水的电阻率不小于18MΩ。
7.根据权利要求1所述的GaInP/GaInAs/Ge太阳电池一次湿法台阶刻蚀工艺,其特征在于,在S6中,将显影清洗后的晶圆片放入120℃±5℃烘箱中烘烤20~30min。
8.根据权利要求1所述的GaInP/GaInAs/Ge太阳电池一次湿法台阶刻蚀工艺,其特征在于,在S7中,坚膜后的晶圆片放入一次湿法刻蚀液中,刻蚀2~3min,刻蚀槽露出Ge界面为止;刻蚀完成的晶圆片通过高纯水多次冲洗后甩干脱水,高纯水的电阻率不小于18MΩ。
9.根据权利要求1所述的GaInP/GaInAs/Ge太阳电池一次湿法台阶刻蚀工艺,其特征在于,在S8中,将已经刻蚀好的晶圆片放入去胶液中去胶,再通过高纯水多次冲洗后甩干脱水,高纯水的电阻率不小于18MΩ。
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