CN113874544A - Apparatus for thermal processing, substrate processing system and method for processing substrate - Google Patents

Apparatus for thermal processing, substrate processing system and method for processing substrate Download PDF

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Publication number
CN113874544A
CN113874544A CN201980096786.2A CN201980096786A CN113874544A CN 113874544 A CN113874544 A CN 113874544A CN 201980096786 A CN201980096786 A CN 201980096786A CN 113874544 A CN113874544 A CN 113874544A
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carrier
substrate
processing system
coils
heating
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克里斯托弗·马尔姆斯
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Applied Materials Inc
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/10—Induction heating apparatus, other than furnaces, for specific applications
    • H05B6/105—Induction heating apparatus, other than furnaces, for specific applications using a susceptor

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

An apparatus for thermal processing of a carrier in a substrate processing system is described. The apparatus comprises a heating arrangement configured to provide thermal energy to the carrier, the heating arrangement comprising one or more coils.

Description

Apparatus for thermal processing, substrate processing system and method for processing substrate
Technical Field
The present disclosure relates generally to substrate processing, such as large area substrate processing. In particular, the present disclosure relates to substrate processing on a carrier carrying a substrate in a substrate processing apparatus. In addition, the present disclosure relates to an apparatus for thermal processing, to a substrate processing system and to a method for processing a substrate. For example, embodiments may relate to conductive carrier heating for stabilizing a vacuum deposition process. In particular, the present disclosure relates to an apparatus for thermal processing of a carrier (e.g., a carrier for carrying a substrate such as a large area substrate in a processing system).
Background
Techniques for layer deposition on a substrate include, for example, sputter deposition, thermal evaporation, and chemical vapor deposition. A sputter deposition process may be used to deposit a layer of material, such as a layer of conductive or insulating material, on the substrate. The coated material can be used in several applications and in several technical fields. For example, one application falls in the field of microelectronics, such as for producing semiconductor devices. Also, substrates for displays are typically coated by physical vapor deposition (e.g., a sputter deposition process) or Chemical Vapor Deposition (CVD). Further applications include insulating panels, substrates with TFTs, color filters or the like.
The substrate processing system can include an atmospheric portion (e.g., a clean room), one or more vacuum chambers, and a load lock chamber for loading substrates from the atmospheric portion to the one or more vacuum chambers. The load lock chamber may be constantly evacuated and vented (vent) to load and/or unload substrates. In addition, two different concepts may be provided, particularly for large area substrates. In one aspect, the substrate may be handled directly by a robot or the like. On the other hand, the substrate may be loaded on a carrier (substrate carrier) and the substrate carrier supporting the substrate may be carried in the vacuum processing system. Although the carrier increases the equipment to be guided through the system and may have some drawbacks, the carrier has the advantage that glass breakage can be reduced, in particular when considering that the substrate has a substrate area of up to several square meters and a thickness below 1mm, such as several tens of millimeters.
The vacuum processing system may provide for circulation of the substrate from atmosphere to vacuum and back to atmosphere. This may for example result in absorption of water from the atmosphere. The water may deform (distor) during vacuum processing of the substrate and may destabilize the deposition process, which may result in different layer properties, for example. For example, water may affect the material properties of layers deposited on the substrate. Radiant heating of the carrier supporting the substrate (such as infrared heating) may cause direct heating of the substrate edge.
In view of the above, an apparatus, system, and method that overcome at least some of the problems in the art would be beneficial.
SUMMARY
In view of the above, an apparatus for thermal treatment of a carrier in a substrate processing system, a substrate processing system and a carrier for supporting a substrate during substrate processing are provided. Further details, features, aspects, modifications and embodiments can be found in the dependent claims, the detailed description and the drawings.
According to one embodiment, an apparatus for thermal processing of a carrier in a substrate processing system is provided. The apparatus comprises a heating arrangement configured to provide thermal energy to the carrier, the heating arrangement comprising one or more coils.
According to one embodiment, an apparatus for thermal processing of a carrier in a substrate processing system is provided. The apparatus includes a heating arrangement having one or more coils disposed around and/or outside of a substrate receiving area.
According to one embodiment, a substrate processing system is provided. The substrate processing system includes an apparatus for thermal processing of a carrier in a substrate processing system. The apparatus comprises a heating arrangement configured to provide thermal energy to the carrier, the heating arrangement comprising one or more coils.
According to one embodiment, a carrier for supporting a substrate during substrate processing is provided. The carrier includes: a frame configured to support a substrate in a substrate processing region, the frame having a first material having a first electrical conductivity; and a shield for the frame, the shield having a second material having a second electrical conductivity lower than the first electrical conductivity.
Embodiments are also directed to apparatuses for performing the disclosed methods and include apparatus portions for performing each described method aspect. These method aspects may be performed by means of hardware components, a computer programmed by suitable software, any combination of the two or in any other manner.
Brief description of the drawings
So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments. The figures relate to embodiments of the present disclosure and are described as follows:
FIG. 1 shows a top view of a processing system according to embodiments described herein;
fig. 2A shows a front view of a carrier carrying a substrate according to embodiments described herein;
fig. 2B illustrates a top view of a carrier carrying a substrate according to embodiments described herein;
fig. 3A-3C illustrate a region prone to thermal treatment and a carrier according to embodiments described herein;
fig. 4 illustrates a top view of a substrate processing system according to embodiments described herein; and is
Fig. 5 shows a flow chart of a method according to embodiments described herein.
Detailed description of the embodiments
Reference will now be made in detail to the various embodiments of the disclosure, one or more examples of which are illustrated in the figures. Within the following description of the drawings, like reference numerals refer to like parts. Only the differences with respect to the individual embodiments are described. Each example is provided by way of explanation of the disclosure, and is not intended as a limitation of the disclosure. In addition, features illustrated or described as part of one embodiment can be used on or in combination with other embodiments to yield yet a further embodiment. It is intended that the specification include such modifications and variations.
Embodiments of the present disclosure provide an apparatus for thermal treatment of a carrier. The device comprises a heating arrangement for inductively heating the carrier, and in particular a heating arrangement comprising one or more coils. Induction heating of the carrier under the atmosphere or inside a vacuum maintains the carrier temperature for avoiding absorption of water or for emitting water collected at the carrier. According to embodiments of the present disclosure, the induction heating occurs only in the metal carrier. Direct heating of the substrate edge can be avoided compared to methods using thermal radiation.
Carriers used to support substrates in vacuum processing systems may absorb molecules (such as water molecules) which may adversely affect the vacuum processing of the substrates. For example, a carrier may be provided for processing a plurality of substrates. The carrier may be transferred to a substrate loading station outside of the vacuum chamber of the vacuum processing system to receive the substrate and may be transferred back into the vacuum chamber of the vacuum processing system with a new substrate to be processed. During the processing of the substrate, for example during a coating process, the material to be deposited on the substrate may also be deposited on the carrier. Each process run will coat the carrier. The coating on the support will grow and simultaneously, the absorption of atmospheric water will increase. That is, the surface of the carrier being circulated into and out of the vacuum chamber of the vacuum processing system may have increasingly thicker layers of deposited material. The material accumulated on the carrier increases the surface available for absorption or absorption of molecules, such as water molecules. Therefore, it is beneficial to emit such molecules from the carrier, particularly in vacuum processing systems, wherein the carrier is repeatedly introduced from atmospheric conditions into the vacuum chamber of the vacuum processing system.
Fig. 1 illustrates a top view of a substrate processing system 100 according to embodiments described herein. The processing system may include modules. The module may be or include a chamber. The processing system includes one or more atmospheric modules 170. The atmosphere module may include a swing module 172. Additionally, the processing system may include one or more load lock modules 174, which may also be referred to herein as "pre-vacuum modules 182". Additionally, the processing system may include one or more transfer modules 180. The one or more transfer modules 180 may include one or more high vacuum modules 184.
According to embodiments described herein, the processing system includes one or more processing modules 190. Vacuum conditions may be applied to one or more of the process modules 190 and/or the transfer module 180 and/or the load lock module 174. The load lock module 174, the process module 190, and/or the transfer module 180, including the pre-vacuum module 182 and the high vacuum module 184, may include chambers. The processing system may be used to process the substrate 230.
Processing of a substrate may be understood as transferring material to the substrate. For example, the deposition material may be deposited on the substrate, for example, by a CVD process or a PVD process (such as sputtering or evaporation). The substrate 230 may include a deposition material receiving side. The deposition material receiving side of the substrate may be considered as the side of the substrate facing the deposition source. In addition, the processing of the substrate may also include etching, cleaning, or thermal processing of the substrate.
According to embodiments described herein, the atmospheric module 170 may be connected to one or more transfer modules 180. Additionally or alternatively, the atmospheric module 170 may be connected to one or more process modules 190. For example, the load lock module 174 may connect the atmospheric module with one or more high vacuum modules 184 and/or process modules 190. The loadlock modules or chambers may help equalize pressure differences between the modules. For example, atmospheric pressure is applied in one module and vacuum is applied in a module connected to the one module via a load lock module.
The substrate processing system 100 may include a transport arrangement 160 for transporting one or more substrates 230. In particular, the transport arrangement 160 may include a transport path 162 extending through the processing system. For example, one or more substrates 230 may be transported from an atmospheric module to one or more processing modules. Additionally, one or more substrates may be transported between one or more process modules. For example, multiple substrates may be transported. In particular, one or more substrates and/or a plurality of substrates may be circulated through the substrate processing system 100. For example, the substrate may be cycled between an atmospheric module and one or more processing modules. Such transport may be along a transport path and/or along a transport loop, for example. According to embodiments of the present disclosure, the substrate is transported while being supported by the carrier, e.g., the substrate may be circulated.
Additionally, a pre-vacuum module may be disposed between the atmospheric module and the one or more process modules. The atmospheric module may include atmospheric conditions. For example, the air pressure in the load module may include atmospheric air pressure. Thus, particles (e.g. O)2、H2O and N2) May be present in the atmospheric module or generally outside one of the vacuum chambers. The pre-vacuum module may include different pressure conditions than the atmospheric module. For example, the pre-vacuum chamber includes a lower pressure condition. The pressure in the pre-vacuum chamber may be lower than 10-1Millibar. The pre-vacuum chamber may be connected to one or more process chambers. The processing chamber may include different pressure conditions as compared to the atmospheric module and/or the pre-vacuum chamber. A load lock module may be disposed between the pre-vacuum chamber and the process chamber. For example, the processing chamber may include vacuum conditions.
Vacuum conditions as used herein include below 10-1Mbar or less than 10-3In millibar range, such as 10-7Mbar to 10-2Pressure conditions in mbar. For example, the vacuum conditions in the load lock module may be at atmospheric and sub-atmospheric conditions (e.g., at 10 f)-1Mbar or less than 10-1In millibar) to be switched. To transfer the substrate into the high vacuum module, the substrate may be inserted into the load lock module set at atmospheric pressure, the load lock module may be sealed, and then, the load lock module may be set to be lower than 10 deg-1Sub-atmospheric pressure in the range of millibar. Subsequently, an opening between the load lock chamber and the high vacuum module may be opened, and the substrate may be inserted into the high vacuum module to transport the substrate into the processing module.
In addition, processVacuum conditions in the module may include at or below 10-2Process pressure conditions of millibar, such as 10-3Mbar to 10-4Mbar, and the like. Background pressure conditions in the processing block may be at 10-7Mbar to 10-6In the millibar range, especially in the range of 10-7Mbar to 5 x 10-6In millibar. The vacuum conditions may be applied by using a vacuum pump or other vacuum generating technique.
According to embodiments described herein, one or more processing modules or chambers may include one or more deposition sources 220. If there is more than one deposition source, the deposition sources may be arranged in an array. For example, the deposition sources are arranged adjacent to each other. The deposition source may extend vertically in length. According to an embodiment, one or more deposition sources may be rotatably fixed to the bottom side of the process module. In particular, there may be two to ten deposition sources in one or more process chambers. More particularly, there may be three or more deposition sources in one or more process chambers.
The introduction of new substrates in a processing system may alter the emission behavior and particle loading or gas levels in the processing system. According to embodiments of the present disclosure, the particle loading may not only be changed by particles entering the system by attaching to the substrate. Absorbing the particles to additional process components (such as, for example, a carrier) further increases the particle loading. Embodiments of the present disclosure provide an apparatus in which a component (such as a carrier) is provided with a reduced particulate loading in a dedicated manner.
According to embodiments described herein, the processing system further comprises an apparatus 200 for thermal processing. The apparatus may be located at and/or near the processing system, such as in at least one or more of an atmospheric module, a load lock module, a high vacuum module, and a transfer module, such as in or out of a vacuum environment. Additionally or alternatively, the apparatus may be located within a processing system. The apparatus may comprise one or more heating arrangements.
Fig. 2A shows a front view of a carrier according to embodiments described herein. According to embodiments described herein, one or more substrates 230 may be carried by the carrier 212 through the substrate processing system 100. The carrier 212 may be transported via a transport arrangement in the processing system. The system may include a plurality of carriers 212 carrying a plurality of substrates 230. Each carrier 212 may carry one substrate. Multiple carriers may be transported simultaneously through the processing system.
According to embodiments described herein, the carrier comprises one or more edge portions 214. The edge portion 214 extends outside the substrate receiving area. In addition, the carrier 212 may carry a substrate 230. The substrate may be loaded onto a carrier. In particular, a substrate may be loaded in the substrate receiving area 232. The substrate 230 may be attached to the carrier 212 via a holding arrangement 218, such as a clamp or mount. For example, the holding arrangement connects the carrier to the substrate. The holding arrangement may comprise a mount. The mount may connect the carrier and the substrate. The holding arrangement may mechanically connect the substrate and the carrier. Additionally or alternatively, the holding arrangement may electrostatically connect the substrate at the carrier.
Additionally or alternatively and in accordance with embodiments described herein, the carrier may comprise or be an electrostatic chuck (E-chuck). The E-chuck may have a support surface for supporting the substrate 230 on the E-chuck. In one embodiment, an E-chuck includes a dielectric body having an electrode embedded therein. The dielectric body may comprise a dielectric material, preferably a high thermal conductivity dielectric material (such as pyrolytic boron nitride, aluminum nitride, silicon nitride, aluminum oxide or equivalent materials). In some embodiments, the dielectric body may be made of a polymeric material (such as polyimide). The electrodes may be coupled to a power source that provides power to the electrodes to control the attraction force. The adsorption force is an electrostatic force acting on the substrate 230 to fix the substrate 230 on the support surface.
Typically, the electronic chuck supports substantially the entire surface of the substrate 230, such as the second major surface or backside. Bending of the substrate 230 may be avoided because substantially the entire surface is attached to the defined support surface of the E-chuck. The substrate 230 may be more stably supported and the process quality may be improved.
According to embodiments, which can be combined with other embodiments described herein, the substrate 230 is a large faceAnd (5) accumulating the substrate. The large area substrate may have a thickness of at least 0.01m2Specifically at least 0.1m2And more particularly at least 0.5m2The size of (2). For example, the large area substrate or carrier may be generation 4.5 (corresponding to about 0.67 m)2Substrate (0.73m × 0.92m)), generation 5 (corresponding to about 1.4 m)2Substrate (1.1m × 1.3m)), generation 7.5 (corresponding to about 4.29 m)2Substrate (1.95m × 2.2m)), generation 8.5 (corresponding to about 5.7 m)2Substrate (2.2m x 2.5m)) or even generation 10 (corresponding to about 8.7 m)2Substrate (2.85m × 3.05 m)). Even higher generations (such as 11 th generation and 12 th generation) and corresponding substrate areas may be similarly implemented.
One or more substrates may be oriented in a substantially vertical position. As used throughout this disclosure, "substantially vertical" is understood, particularly when referring to substrate orientation, to allow for a deviation of ± 20 ° or less (e.g., ± 10 ° or less) from the vertical direction or orientation. For example, such deviations may be provided because a substrate support or carrier with some deviation from a vertical orientation may result in a more stable substrate position, or a downward facing substrate orientation may even better reduce particles on the substrate during deposition. However, the substrate orientation (e.g., during the layer deposition process) is considered substantially vertical, which is considered to be different from a horizontal substrate orientation, which may be considered to be ± 20 ° or less horizontal. For example, one or more substrates may be in a substantially vertical position during a deposition process and/or during transport.
For example, deposition material may be transferred from a vertically arranged deposition source to a substantially vertically oriented substrate. The material to be deposited may be coated on the substrate.
Embodiments of the present disclosure (as shown in fig. 2A and 2B) relate to an apparatus 200, for example, for thermal processing of a carrier 212 in a processing system. The apparatus comprises a heating arrangement 240 configured to provide thermal energy to one or more edge portions 214 of the carrier. According to an embodiment of the present disclosure, the heating arrangement comprises one or more coils for inductive heating of the carrier. Inductive carrier heating utilizes the electrical process of inductive heating by creating eddy current losses in a conductive material, such as the conductive material of the carrier or a conductive material attached to the carrier. Induction heating of the carrier under the atmosphere or inside a vacuum maintains the carrier temperature for avoiding absorption of water or for emitting water collected at the carrier. According to embodiments of the present disclosure, the induction heating occurs only in the metal carrier. Heating of the substrate edge can be avoided compared to methods using thermal radiation.
Fig. 2B illustrates a top view of a carrier carrying a substrate according to embodiments described herein. The heating arrangement 240 may be arranged adjacent to the carrier. In particular, the heating arrangement may be arranged in the vicinity of the substrate-carrier-arrangement 250.
According to an embodiment, the apparatus 200 for thermal treatment may be arranged such that thermal energy reaches the carrier 212. The one or more heating arrangements 240 may be configured to provide thermal energy to the edge portion 214. For example, the heating arrangement 240 may be arranged on the side where deposition is likely to occur.
The heating arrangement 240 may provide at least 1kW/m2The thermal energy of (2). For example, the thermal energy provided by the heating arrangement is in the range of 4kW/m2And 100kW/m2In particular at 4kW/m2And 10kW/m2In the meantime. For example, the support may be heated to a temperature of 120 ℃. In particular, the support may be heated to a temperature of up to 100 ℃, more particularly up to 80 ℃.
According to some embodiments, which can be combined with other embodiments described herein, the carrier can comprise a frame. For example, the frame may include one or more frame portions. The frame may for example be rectangular, i.e. correspond to a glass substrate for display manufacturing. Especially for higher generations, the frame may comprise four or more frame parts, e.g. four corner parts, at least one top bar (top bar), at least one bottom bar and at least two side bars.
The support as described herein may comprise or may consist essentially of aluminum. For example, the frame portion may be made of aluminum. The frame part comprising aluminium may have 35 x 106AV-1m-1Or higher conductivity. Thus, the electrical losses of the hot eddy currents can be quite low. Therefore, in order to provide the above-mentioned thermal energy,the power source for generating electrical energy may be configured to provide at least 20 kW.
Fig. 3A shows a carrier 212. The carrier provides a frame or edge portion 214 for the substrate 230. The carrier 212 may include a carrier frame 216. The edge portion 214 may provide a frame that surrounds the substrate receiving area 232. Carrier frame 216 may display the outermost edge of carrier 212. The carrier frame 216 may at least partially surround the substrate receiving area 232. Alternatively, the carrier frame 216 may completely surround the substrate receiving area 232. For example, the width of the carrier frame may be in the range between 10mm and 500 mm. In particular, the width of the carrier frame may be in the range between 50mm and 400 mm. More particularly, the width of the carrier frame may be in the range between 100mm and 300 mm.
The heating arrangement 200 comprises a coil 340, for example a coil of an inductor. According to some embodiments, which can be combined with other embodiments described herein, the coil can be a flat (flat) coil. For example, one or more windings may be provided in a plane parallel to the surface of the carrier 212. Fig. 3A exemplarily shows one winding. In addition, additional windings may be provided. The coil is energized by a power supply 344 providing an alternating current to generate an alternating magnetic field. According to some embodiments, which can be combined with other embodiments described herein, a matching circuit 342 may be provided for adapting the output power of the power supply 344 to the impedance of the coil 240.
The power supply 344 for the induction heater includes a circuit with an oscillator circuit. The oscillator topology may for example comprise semiconductor electrical switches, such as MOSFETs and/or IGBTs. In addition, the matching circuit 342 may include a capacitor, among others. Additionally, an inductor (such as coil 340) may be provided for induction heating.
According to some embodiments, which can be combined with other embodiments described herein, the operating frequency can be 2kHz to 200 kHz. The frequency may be adapted to the heating process. For example, lower frequencies, e.g. 2kHz to 30kHz, may be used to heat the surface of the carrier and deeper regions of the carrier, i.e. regions below the surface in bulk material. Higher frequencies, for example 30kHz to 200kHz, may be used for surface heating and/or for shielded carriers, as described below. According to embodiments of the present disclosure, induction heating may thus be utilized to spread thermal energy deep into the core of the material. The carrier (e.g., a frame portion of the carrier) may be heated throughout, which may result in slower cooling.
According to yet another embodiment, which may be combined with other embodiments described herein, a portion of the carrier (e.g. a frame portion or a shield provided at the carrier) may comprise a material having a rather low electrical conductivity. Heat loss can be increased to make the carrier easier to heat. For example, the carrier moiety may comprise or consist essentially of a polymer having 10 x 106AV-1m-1Or a material composition of lower electrical conductivity. For example, portions of the carrier may be made of titanium. Thus, a mixture of an aluminum portion and a titanium portion may be provided. According to yet another embodiment, which can be combined with other embodiments described herein, the carrier with the frame portion may comprise a shield shielding the frame portion, wherein the shield comprises or consists of titanium.
For example, the carrier may have an aluminum frame portion and a titanium shield for shielding the frame portion. Thus, shields exposed to the coating and primarily to molecules from atmospheric conditions (such as water molecules) may be more easily heated due to lower electrical conductivity. According to yet another embodiment, which can be combined with other embodiments described herein, a material composition of aluminum and another material having a lower electrical conductivity than aluminum (e.g., titanium) can be provided.
According to an embodiment of the present disclosure, a carrier for supporting a substrate during substrate processing is provided. The carrier includes: a frame configured to support a substrate in a substrate processing region, the frame having a first material, such as aluminum, having a first electrical conductivity; and a shield for the frame, the shield having a second material, such as titanium, having a second electrical conductivity lower than the first electrical conductivity.
Fig. 3A shows a coil 340. Figure 3B shows several coils 340. Fig. 3C shows one coil 340. As described above, the heating power may be lower than the electrical power provided by the one or more power sources 344. Power losses may occur in the inductor (e.g., coil). Thus, can beImplementations of the present disclosure provide one or more of the following details, features, and aspects. For example, the coil may comprise copper or have a high electrical conductivity, in particular 50 x 106AV-1m-1Or another material of higher electrical conductivity, or copper or having a high electrical conductivity, in particular 50 x 106AV-1m-1Or another material of higher electrical conductivity. The wiring of the inductor, i.e. the one or more coils, may be provided by the hollow tube. The hollow tube allows for a cooling fluid, such as water, to be provided in the wiring. Thus, power losses inside the coil can be cooled, for example using an integrated water cooling circuit. Additionally or alternatively, cooling with a cooling fluid (such as water) may be provided between the wires or windings of one or more coils. Additionally, portions of one or more coils may be provided by the stranded cable to reduce power losses. For example, a combination of hollow wiring and stranded cable may be provided. According to some embodiments, which can be combined with other embodiments described herein, the coil 340 as exemplarily shown in fig. 3C can be closed, e.g. to completely enclose an edge portion of the carrier. The uniformity of heating can be further improved.
According to yet another embodiment, which can be combined with other embodiments described herein, and as described above, a flat coil can be provided. The flat coil provides a winding or wiring (or a single winding of wiring) at least partially in a plane. The flat coil may be arranged parallel to a surface (such as a frame surface) and in particular close to a carrier surface. Therefore, the gap between the coil and the material to be heated can be small.
According to yet another embodiment, the one or more coils extend over most or substantially the entire surface of the carrier surface to be heated, such as the frame of the carrier. According to the exemplary embodiment described with respect to fig. 3A, the coil may be wound to correspond to the frame-shaped carrier or may be wound to correspond to at least a portion of the frame. For example, fig. 3A shows a substantially frame-shaped coil. Alternatively, two L-shaped coils may be provided. As shown in fig. 3B, and according to yet another embodiment, which may be combined with other embodiments described herein, two or more coils, e.g., four coils 340, may be provided. For example, each of the four coils may be disposed at one side of the frame of the carrier 212.
According to some embodiments, which can be combined with other embodiments described herein, embodiments having two or more coils can have separate power supplies 344 and/or separate matching circuits 342 for each of the coils. According to a further modification, coils having similar geometries may share a power supply and matching circuitry. For example, for the embodiment exemplarily shown in fig. 3B, the left coil 340 and the right coil 340 may have a common power supply and a common matching circuit. In addition, the upper coil 340 and the lower coil 340 may have a common power supply and a common matching circuit.
Advantageously, the heating of the support supports the emission of particles from the support and/or avoids the absorption of particles or molecules on the support. Thus, impurities may be removed from the carrier and/or contamination of the carrier may be avoided. The carrier can be transported between different pressure conditions. One or more carriers of the system may be stopped in different modules and thus under different pressure conditions. During the residence time under atmospheric conditions, the particles may be absorbed to the carrier. These particles are transported to subsequent modules with different pressure conditions. Subsequent transports interfere with the ongoing process, and therefore the ongoing process must be shut down (nest) before the process can continue. Therefore, it is advantageous to remove particles from the support to accelerate the process upsets.
Fig. 4 illustrates a top view of the substrate processing system 100 according to embodiments described herein. Embodiments of the present disclosure that provide induction heating to a support may operate under atmospheric conditions as well as under vacuum conditions.
According to embodiments described herein, the substrate processing system 100 may include an atmospheric module 170 (including a swing module 172 and an induction heating module 474), a load lock module 174, one or more transfer modules 180, and one or more process modules 190. For example, one swing module 172 may be connected to a load lock module 174, which may be further connected to a pre-vacuum chamber 182. The pre-vacuum chamber may be connected to a high vacuum chamber 184. A high vacuum chamber may be connected to the process chamber. The process chamber may be connected to another process chamber. In general, the number of process chambers that can be subsequently arranged can vary between one chamber and eight process chambers, in particular between one process chamber and five process chambers, more in particular between one process chamber and three process chambers. The substrate processing system 100 may further comprise a transport arrangement 160.
According to embodiments described herein, the heating arrangement 240 may be arranged at different locations of the substrate processing system 100. For example, the heating arrangement 240 may be arranged at the atmospheric module 170. For example, the heating arrangement may be located at the swing module 172. Additionally, as shown in the processing system 100 of fig. 4, a heating module 474 may be disposed between the swing module 172 and the load lock module. According to some embodiments, which can be combined with other embodiments described herein, the heating module 474 comprising means for the thermal treatment of the support can be provided under atmospheric conditions.
Additionally or alternatively, the apparatus 200 for thermal treatment may be provided at one or more of the transfer modules 180 according to embodiments described herein. The apparatus 200 for thermal treatment may be arranged in one or more transfer modules 180. The apparatus 200 or one or more heating arrangements 240 for thermal treatment may be located in a pre-vacuum module or chamber. The heating in the pre-vacuum chamber may be performed statically. Static heating is to be understood as a heating arrangement which is stationary, for example at the chamber wall. Static heating may also be understood as a fixed heating arrangement attached to the wall of the chamber. Quiescent heating can include the carrier stopping inside the chamber.
Advantageously, the particles may be removed at the beginning of the substrate processing. In addition, since heating is performed after the carrier is removed from the vacuum condition, absorption can be avoided. Thus, the particles are more effectively prevented from spreading to the subsequent chamber. In addition, degassing of the carrier is facilitated. Thus, improved process stability and performance may be achieved. According to some embodiments, the method for the thermal treatment of a support may be used to maintain the surface temperature of the support to avoid water absorption during contact with the atmosphere. Thus, the carrier may be heated after unloading the carrier from the load lock chamber. Heating the carrier to a sufficiently high temperature and/or a sufficient material depth may cause the carrier temperature to be sufficiently high to avoid water absorption during operation of the swing module and subsequent loading of the substrate. However, induction heating of the carrier can also be used to liberate collected molecules, such as water molecules. In view of the above, process stability may be provided for a substrate processing process (e.g., a deposition process).
According to embodiments described herein, depletion of residual particles or gas may be monitored by Residual Gas Analysis (RGA) measurements. The monitoring and adjustment of the temperature may be performed by the control system. For example, the control system may be a closed loop system. The measurements may be made in one or more transfer modules 180 and/or one or more processing modules 190. For example, RGA can be performed in a pre-vacuum chamber and a processing chamber. RGAs may be associated with heat regulation. According to an embodiment, a closed loop system for heating of the carrier may be established. For example, the adjustment of the device 200 for thermal treatment may be correlated to the outcome of the RGA. For example, if a high particle amount or a high residual gas amount is measured, the temperature of the apparatus for heat treatment may be increased.
According to embodiments described herein, the apparatus 200 for thermal treatment may be disposed at a portion of a wall of a module or chamber. The module or chamber may include a top wall, four side walls, and/or a bottom wall. The apparatus for thermal treatment may be arranged at each wall of the one or more transfer chambers and/or the one or more atmospheric modules. The apparatus 200 for thermal treatment may be arranged at least at a portion of the chamber wall. For example, the apparatus 200 for heat treatment may be arranged in the upper section, the lower section and/or the side sections of the respective wall. The apparatus 200 for heat treatment may further cover the entire respective wall.
According to embodiments described herein, the transport arrangement 160 may be configured to transport the carrier 212 through the apparatus 200 for thermal treatment. For example, the transport path 162 may be configured to provide a carrier at a point in the module where heating of the device for thermal treatment may be applied to the carrier 212. For example, the carrier may stop opposite the heating arrangement 240.
According to embodiments described herein, heating may be provided to the carrier 212 during movement of the carrier. The carrier may be transported between modules or chambers. For example, the carrier is transported between two transport modules. One of the transfer modules may be a pre-vacuum chamber and the second transfer module may be a high-vacuum chamber. Heating may be provided to the carrier during transport of the carrier. The heating may be provided to the carrier frame as pulsed heating, i.e. the heating is then switched on and off. For example, the heating may be turned on and off depending on the position of the carrier and substrate. For example, only the carrier may be heated without heating the substrate, e.g. by switching off the heating arrangement at a specified position of the carrier and/or the substrate.
According to embodiments described herein, the first region of the substrate-carrier-arrangement may be a substrate receiving region of the substrate-carrier-arrangement. According to embodiments described herein, the second region of the substrate-carrier-arrangement may be an edge portion of a carrier of the substrate-carrier-arrangement. For example, the first apparatus 252 for thermal processing may provide heating to the substrate receiving region, and the second apparatus 254 for thermal processing may provide heating to the edge portion and/or the carrier frame.
Fig. 6 shows a flow chart of a method according to embodiments described herein. The method may be performed using a substrate processing system 100 according to embodiments described herein.
According to embodiments that may be combined with any of the embodiments described herein, block 610 includes loading the substrate on a carrier in a substrate receiving area. The carrier and the substrate may be a substrate-carrier-arrangement. The carrier loaded with the substrate may be placed on the swing module. The swing module may be a swing module as described according to embodiments herein. The substrate-carrier-arrangement can be brought into a vertical position by swinging the module.
According to an embodiment that may be combined with any of the embodiments described herein, block 620 includes introducing the carrier into the substrate processing system. For example, a substrate-carrier-arrangement is introduced into a substrate processing system. The carrier and/or the substrate-carrier arrangement can be introduced vertically. The carrier may be attached to a transport arrangement as described in embodiments herein. Thus, the carrier and/or the substrate-carrier-arrangement may be transported through the substrate processing system. The substrate-carrier-arrangement may be introduced into a load lock module or chamber as described herein.
According to embodiments that may be combined with any of the embodiments described herein, block 630 comprises inductively heating a region of the carrier, for example, with an apparatus for thermal treatment. The region of the carrier different from the substrate receiving region may be a heated carrier region. As described in embodiments herein, heating may be provided by a heating arrangement. The apparatus for heat treatment may comprise a heating arrangement as described herein. For example, heating may be provided for 20 seconds or more and/or 50 seconds or less (such as up to about 40 seconds). The support may be provided with a temperature of at least 80 ℃.
Advantageously, particle absorption or molecular absorption may be avoided and/or particles that may be absorbed to the carrier in the atmospheric module may be removed from the carrier. For example, such absorption may increasingly occur during processing system shut-down when the carrier is placed in an atmospheric module. Thus, degassing of the support can be ensured. In addition, the stability of the process is improved.
While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims (17)

1. An apparatus (200) for thermal processing of a carrier (212) in a substrate processing system, the apparatus (200) comprising:
a heating arrangement (240) configured to provide thermal energy to the carrier, the heating arrangement comprising:
one or more coils.
2. The apparatus 200 according to claim 1, wherein the carrier is configured to support a substrate 230 in a substrate receiving area 232, the carrier 212 having one or more edge portions 214 extending outside the substrate receiving area 232, wherein the heating arrangement is configured to provide thermal energy to the one or more edge portions 214.
3. The apparatus 200 according to claim 2, wherein the one or more edge portions 214 provide a frame 216 surrounding the substrate receiving area 232.
4. The apparatus (200) of claim 3, wherein the heating arrangement (240) is configured to provide thermal energy to the frame (216).
5. The device of any one of claims 1 to 4, wherein the one or more coils are one or more pancake coils.
6. The apparatus of any of claims 1 to 5, further comprising:
one or more power sources, and
one or more impedance matching circuits disposed between the one or more power sources and the one or more coils.
7. The apparatus of claim 6, wherein an impedance matching circuit of the one or more impedance matching circuits is disposed between a power supply of the one or more power supplies and at least one coil of the one or more coils having a predetermined geometry.
8. The apparatus of claim 7, wherein a common impedance matching circuit is provided for coils of the one or more coils having the same predetermined geometry.
9. The apparatus of any of claims 6 to 7, further comprising:
a controller configured to adapt a frequency of the one or more power sources.
10. The apparatus (200) of any of claims 1 to 9, wherein the heating arrangement (240) comprises:
an energy source for providing energy to the heating arrangement (240).
11. The apparatus (200) of claim 10, wherein the energy source comprises a power source for inductively coupling a current to the carrier.
12. The apparatus (200) of any of claims 1 to 11, wherein the heating arrangement (240) provides at least 1kW/m2The thermal energy of (2).
13. An apparatus (200) for thermal processing of a carrier (212) in a substrate processing system, the apparatus (200) comprising:
a heating arrangement (240) comprising:
one or more coils disposed around and/or outside of the substrate receiving area.
14. A substrate processing system (100), comprising:
the apparatus (200) for thermal treatment according to any of claims 1 to 13.
15. The substrate processing system (100) of claim 14, wherein the system further comprises a transport arrangement (160) configured to transport the carrier (212) through the apparatus (200) for thermal treatment.
16. The substrate processing system (100) of claims 14 to 15, wherein the system further comprises one or more atmospheric modules (170), the apparatus (200) for thermal processing being arranged at the one or more atmospheric modules (170).
17. A carrier for supporting a substrate during substrate processing, comprising:
a frame configured to support a substrate in a substrate processing region, the frame having a first material having a first conductivity;
a shield for the frame, the shield having a second material having a second electrical conductivity lower than the first electrical conductivity.
CN201980096786.2A 2019-05-24 2019-05-24 Apparatus for thermal processing, substrate processing system and method for processing substrate Pending CN113874544A (en)

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