CN113783560B - 电路装置、振荡器、电子设备以及移动体 - Google Patents

电路装置、振荡器、电子设备以及移动体 Download PDF

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Publication number
CN113783560B
CN113783560B CN202110642441.1A CN202110642441A CN113783560B CN 113783560 B CN113783560 B CN 113783560B CN 202110642441 A CN202110642441 A CN 202110642441A CN 113783560 B CN113783560 B CN 113783560B
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China
Prior art keywords
circuit
switch
output
node
supply voltage
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CN202110642441.1A
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English (en)
Chinese (zh)
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CN113783560A (zh
Inventor
別府耕平
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Seiko Epson Corp
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Seiko Epson Corp
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/017545—Coupling arrangements; Impedance matching circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/04—Generating or distributing clock signals or signals derived directly therefrom
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/04—Generating or distributing clock signals or signals derived directly therefrom
    • G06F1/10—Distribution of clock signals, e.g. skew
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26—Power supply means, e.g. regulation thereof
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
    • H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
    • H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
    • H03B5/36—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
    • H03B5/364—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device the amplifier comprising field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/003—Circuit elements of oscillators
    • H03B2200/0034—Circuit elements of oscillators including a buffer amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • Mathematical Physics (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)
CN202110642441.1A 2020-06-10 2021-06-09 电路装置、振荡器、电子设备以及移动体 Active CN113783560B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-100716 2020-06-10
JP2020100716A JP7508874B2 (ja) 2020-06-10 2020-06-10 回路装置、発振器、電子機器及び移動体

Publications (2)

Publication Number Publication Date
CN113783560A CN113783560A (zh) 2021-12-10
CN113783560B true CN113783560B (zh) 2023-05-12

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110642441.1A Active CN113783560B (zh) 2020-06-10 2021-06-09 电路装置、振荡器、电子设备以及移动体

Country Status (3)

Country Link
US (1) US11539363B2 (enExample)
JP (1) JP7508874B2 (enExample)
CN (1) CN113783560B (enExample)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5073726A (en) * 1989-07-28 1991-12-17 Kabushiki Kaisha Toshiba Input circuit of semiconductor integrated circuit and semiconductor integrated circuit having input circuit
CN102088282A (zh) * 2009-12-03 2011-06-08 Nxp股份有限公司 具有开关本体伪单元的开关本体pmos开关
CN110401419A (zh) * 2018-04-25 2019-11-01 精工爱普生株式会社 输出缓冲器电路、振荡器、电子设备和移动体

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5546022A (en) * 1994-12-16 1996-08-13 Sun Microsystems, Inc. Static logic circuit with improved output signal levels
JP3463628B2 (ja) * 1999-10-18 2003-11-05 日本電気株式会社 スルーレート調整可能な出力回路を備えた半導体回路およびその調整方法ならびに自動調整装置
JP4357936B2 (ja) * 2002-11-20 2009-11-04 株式会社半導体エネルギー研究所 半導体装置
JP2006060751A (ja) * 2004-08-24 2006-03-02 Ricoh Co Ltd 出力装置、差動出力装置、半導体レーザ変調駆動装置、画像形成装置及び電子機器
JP4437541B2 (ja) * 2004-11-17 2010-03-24 富士通マイクロエレクトロニクス株式会社 リセット制御回路及びリセット制御方法
US8149023B2 (en) * 2009-10-21 2012-04-03 Qualcomm Incorporated RF buffer circuit with dynamic biasing
US20110148473A1 (en) * 2009-12-22 2011-06-23 Nxp B.V. Switch-body pmos switch with switch-body dummies
FR2959367A1 (fr) * 2010-04-21 2011-10-28 St Microelectronics Sa Circuit tampon pour charge capacitive de forte valeur
US9306563B2 (en) * 2013-02-19 2016-04-05 Lattice Semiconductor Corporation Configurable single-ended driver
US10270450B1 (en) * 2018-08-23 2019-04-23 Xilinx, Inc. Unified low power bidirectional port

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5073726A (en) * 1989-07-28 1991-12-17 Kabushiki Kaisha Toshiba Input circuit of semiconductor integrated circuit and semiconductor integrated circuit having input circuit
CN102088282A (zh) * 2009-12-03 2011-06-08 Nxp股份有限公司 具有开关本体伪单元的开关本体pmos开关
CN110401419A (zh) * 2018-04-25 2019-11-01 精工爱普生株式会社 输出缓冲器电路、振荡器、电子设备和移动体

Also Published As

Publication number Publication date
US11539363B2 (en) 2022-12-27
JP2021197580A (ja) 2021-12-27
CN113783560A (zh) 2021-12-10
US20210391859A1 (en) 2021-12-16
JP7508874B2 (ja) 2024-07-02

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