CN113764393B - 显示装置及其制造方法 - Google Patents
显示装置及其制造方法 Download PDFInfo
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- CN113764393B CN113764393B CN202111030858.9A CN202111030858A CN113764393B CN 113764393 B CN113764393 B CN 113764393B CN 202111030858 A CN202111030858 A CN 202111030858A CN 113764393 B CN113764393 B CN 113764393B
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- light emitting
- emitting unit
- driving unit
- unit
- circuit substrate
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- 238000004519 manufacturing process Methods 0.000 title claims description 35
- 238000000034 method Methods 0.000 title description 24
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- 238000012546 transfer Methods 0.000 claims description 40
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- 229910000679 solder Inorganic materials 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 5
- 239000003086 colorant Substances 0.000 claims description 4
- 230000008569 process Effects 0.000 description 13
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 9
- 239000010949 copper Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010408 film Substances 0.000 description 3
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- 229910052709 silver Inorganic materials 0.000 description 3
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- 239000004642 Polyimide Substances 0.000 description 2
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- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
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- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- 229910052725 zinc Inorganic materials 0.000 description 1
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- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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Abstract
一种显示装置,其包括电路基板、驱动单元以及发光单元。驱动单元配置于电路基板上。发光单元配置于电路基板上。驱动单元的厚度基本上相同于发光单元的厚度。
Description
技术领域
本发明是有关于一种电子装置,且特别是有关于一种显示装置。
背景技术
发光二极管(light emitting diode;LED)具有诸如寿命长、体积小、高抗震性、低热产生及低功率消耗等优点,因此已被广泛应用于家用及各种设备中的指示器或光源。然而,如何较为简单地制造具有发光二极管的显示装置,且仍可以维持显示装置的制造成本、良率及/或品质,实已成目前亟欲解决的课题。
发明内容
本发明提供一种显示装置及其制造方法,可以具有较低廉的制造成本及/或具有较佳的良率或品质。
本发明的显示装置包括电路基板、驱动单元以及发光单元。驱动单元配置于电路基板上。发光单元配置于电路基板上。驱动单元的厚度基本上相同于发光单元的厚度。
本发明的显示装置的制造方法包括以下步骤:提供电路基板;配置驱动单元于电路基板上;以及配置发光单元于电路基板上,其中驱动单元的厚度基本上相同于发光单元的厚度。
基于上述,本发明的显示装置及其制造方法,可以具有较低廉的制造成本及/或具有较佳的良率或品质。
以下结合附图和具体实施例对本发明进行详细描述,但不作为对本发明的限定。
附图说明
图1A是依照本发明的第一实施例的一种显示装置的部分制造方法的部分立体示意图。
图1B至图1F是依照本发明的第一实施例的一种显示装置的部分制造方法的部分剖视示意图。
图2A至图2F是依照本发明的第一实施例的一种显示装置的部分制造方法的部分剖视示意图。
其中,附图标记:
100、200:显示装置
110、210:驱动单元
110h、210h:厚度
115:第一导电端子
111、211:基材
113:驱动元件
160、160R、160G、160B、260、260R、260G、260B:发光单元
160h、260h:厚度
165:第二导电端子
267:磊晶层
269:基板
131、132:转移载板
137、138:离型层
170:电路基板
175:连接垫
181:第一导电层
182:绝缘层
183:半导体层
184:第二导电层
191:制作载板
291、292:基板
D:漏极
S:源极
CH:通道
GI:栅绝缘层
PU:像素单元
具体实施方式
下面结合附图对本发明的结构原理和工作原理作具体的描述:
在附图中,为了清楚起见,放大了各元件等的厚度。在整个说明书中,相同的附图标记表示相同的元件。应当理解,当诸如层、膜、区域或基板的元件被称为在“另一元件上”、或“连接到另一元件”、“重叠于另一元件”时,其可以直接在另一元件上或与另一元件连接,或者中间元件可以也存在。相反,当元件被称为“直接在另一元件上”或“直接连接到”另一元件时,不存在中间元件。如本文所使用的,“连接”可以指物理及/或电连接。
应当理解,尽管术语“第一”、“第二”、“第三”等在本文中可以用于描述各种元件、部件、区域、层及/或部分,但是这些元件、部件、区域、及/或部分不应受这些术语的限制。这些术语仅用于将一个元件、部件、区域、层或部分与另一个元件、部件、区域、层或部分区分开。因此,下面讨论的“第一元件”、“部件”、“区域”、“层”、或“部分”可以被称为第二元件、部件、区域、层或部分而不脱离本文的教导。
这里使用的术语仅仅是为了描述特定实施例的目的,而不是限制性的。如本文所使用的,除非内容清楚地指示,否则单数形式“一”、“一个”和“该”旨在包括复数形式,包括“至少一个”。“或”表示“及/或”。如本文所使用的,术语“及/或”包括一个或多个相关所列项目的任何和所有组合。还应当理解,当在本说明书中使用时,术语“包括”及/或“包括”指定所述特征、区域、整体、步骤、操作、元件的存在及/或部件,但不排除一个或多个其它特征、区域整体、步骤、操作、元件、部件及/或其组合的存在或添加。
此外,诸如“下”或“底部”和“上”或“顶部”的相对术语可在本文中用于描述一个元件与另一元件的关系,如图所示。应当理解,相对术语旨在包括除了图中所示的方位之外的装置的不同方位。例如,如果一个附图中的装置翻转,则被描述为在其他元件的“下”侧的元件将被定向在其他元件的“上”侧。因此,示例性术语“下”可以包括“下”和“上”的取向,取决于附图的特定取向。类似地,如果一个附图中的装置翻转,则被描述为在其它元件“下方”或“下方”的元件将被定向为在其它元件“上方”。因此,示例性术语“下面”或“下面”可以包括上方和下方的取向。
除非另有定义,本文使用的所有术语(包括技术和科学术语)具有与本发明所属领域的普通技术人员通常理解的相同的含义。将进一步理解的是,诸如在通常使用的字典中定义的那些术语应当被解释为具有与它们在相关技术和本发明的上下文中的含义一致的含义,并且将不被解释为理想化的或过度正式的意义,除非本文中明确地这样定义。
本文参考作为理想化实施例的示意图的截面图来描述示例性实施例。因此,可以预期到作为例如制造技术及/或公差的结果的图示的形状变化。因此,本文所述的实施例不应被解释为限于如本文所示的区域的特定形状,而是包括例如由制造导致的形状偏差。例如,示出或描述为平坦的区域通常可以具有粗糙及/或非线性特征。此外,所示的锐角可以是圆的。因此,图中所示的区域本质上是示意性的,并且它们的形状不是旨在示出区域的精确形状,并且不是旨在限制权利要求的范围。
图1A是依照本发明的第一实施例的一种显示装置的部分制造方法的部分立体示意图。图1B至图1F是依照本发明的第一实施例的一种显示装置的部分制造方法的部分剖视示意图。
请参照图1A,于制作载板191上形成基材111。
在本实施例中,制作载板191可以为绝缘材质。举例而言,制作载板191可以包括玻璃,但本发明不限于此。
在本实施例中,基材111可以借由涂布或贴膜的方式形成于制作载板191上。举例而言,基材111可以是借由涂布或贴膜的方式所形成的聚酰亚胺(Polyimide;PI)层,但本发明不限于此。
请继续参照图1A,于制作载板191上形成对应的膜层。举例而言,可以借由常用的低温多晶硅制程(low temperature poly-silicon process;LTPS Process),以于基材111上形成对应的第一导电层181、绝缘层182、半导体层183以及第二导电层184。相较于在硅晶圆上进行的芯片半导体制程,前述的低温多晶硅制程成本可以较为低廉。第一导电层181、绝缘层182、半导体层183及/或第二导电层184可以依据设计上的需求而具有对应的图案。另外,为求清楚表示,于图1A中仅示例性地显示了形成于载板191上的基材111、第一导电层181、绝缘层182、半导体层183及第二导电层184。
第一导电层181的一部分可以被称为栅极G。绝缘层182的至少一部分可以被称为栅绝缘层GI。半导体层183的至少一部分可以被称为通道CH。第二导电层184的其中一部分可以被称为源极S。第二导电层184的其中另一部分可以被称为漏极D。源极S、漏极D、通道CH以及栅极G可以构成驱动元件113。
在图1A中,驱动元件113是以底栅极薄膜晶体管(bottom gate thin filmtransistor)为例,但本发明不限于此。在其他未示的实施例中,类似于驱动元件113的驱动元件可以是顶栅极薄膜晶体管(top gate thin film transistor)、双栅极薄膜晶体管(dual gate thin film transistor)或其他类似的晶体管。
另外,在其他未示的实施例或未示于图1A的区域中,制作载板191上可以依据设计上的需求而具有其他的膜层。对应的膜层可以构成对应的其他元件(如:电容、导线或连接垫(contact pad),但不限),而元件之间可以依据设计上的需求而加以电性连接。另外,于图1A中仅示例性地显示一个驱动元件113,但本发明对于制作载板191上的元件(如:驱动元件113)的数量并不加以限制。
另外,在后续的附图中,为求清楚表示,仅示意性地显示驱动元件113。
请参照图1B,在本实施例中,可以于制作载板191上形成多个第一导电端子115。第一导电端子115可以电性连接于驱动元件113。举例而言,多个第一导电端子115的其中之一可以电性连接于对应的驱动元件113中的源极S(标示于图1A),多个第一导电端子115的其中又一可以电性连接于对应的驱动元件113中的漏极D(标示于图1A),多个第一导电端子115的其中另一可以电性连接于对应的驱动元件113中的栅极G(标示于图1A)。
在图1B中,仅示例性地显示一剖面上可能的第一导电端子115的数量或其对应的配置方式。第一导电端子115的数量或其对应的配置方式可以依据设计上的需求而加以调整,于本发明并不加以限定。
在本实施例中,第一导电端子115的材质可以包括锡(Sn)、铟(In)、铋(Bi)、上述的组合(如:锡/铋(Sn/Bi)、锡/铟(Sn/In),但不限)、包含上述元素的合金(如:锡/铜(Sn/Cu),锡/银(Sn/Ag),锡/锑(Sn/Sb),锡/锌(Sn/Zn),锡/银/铜(Sn/Ag/Cu),锡/银/铜/铋(Sn/Ag/Cu/Bi),但不限)或其他适宜的焊料。举例而言,前述焊料的熔点可以低于260℃。在一实施例中,第一导电端子115可以借由蒸镀、电镀或其他适宜的方式形成,但本发明不限于此。
在本实施例中,基材111可以依据设计上的需求而被图案化。对应的驱动元件113、对应的基材111及对应的第一导电端子115可以构成驱动单元110。另外,本发明对于各个驱动单元110中的驱动元件113、第一导电端子115的数量及/或其他未示的元件的数量并不加以限制。
在一实施例中,借由熔点低于260℃的焊料可以较容易地调整驱动单元110的厚度110h。
请参照图1B至图1C,在本实施例中,可以将驱动单元110转移至第一转移载板131,但本发明不限于此。驱动单元110的第一导电端子115可以面向第一转移载板131。另外,本发明对于第一转移载板131上的驱动单元110的个数或排列方式并不加以限制。
在本实施例中,驱动单元110与第一转移载板131之间可以具有对应的离型层137。本实施例中,离型层137为整面设置,但本发明不在此限。于一实施例中,离型层137可为图案化设置,又或是省略设置。
请参照图1D,将驱动单元110转移至第二转移载板132。在本实施例中,如图1C至图1D所示,可以借由激光选择性转移(Laser selective transfer)或其他适宜的方式,以将第一转移载板131上的驱动单元110转移至第二转移载板132。举例而言,可以将第一转移载板131上的驱动单元110面向第二转移载板132;然后,借由激光的方式,使第一转移载板131上特定区域的离型层137产生表面变化,而使对应的驱动单元110可以被转移至第二转移载板132。
在一实施例中,上述借由激光的方式可以包括选择性激光转移制程(selectivelaser transfer process)、选择性激光剥离制程(selective laser lift-off process)或其他类似的激光驱动转移(laser propulsion transfer process)制程,但本发明不限于此。
请参照图1D,可以借由相同或相似于前述的转移方式,以将发光单元160转移至第二转移载板132。值得注意的是,本发明并未限定驱动单元110及发光单元160的转移先后顺序。
在本实施例中,被转移至第二转移载板132的发光单元160可以包括具有不同颜色的第一发光单元160R、第二发光单元160G及第三发光单元160B。举例而言,第一发光单元160R可以为红色发光单元,第二发光单元160G可以为绿色发光单元,且第三发光单元160B可以为蓝色发光单元,但本发明不限于此。
在本实施例中,发光单元160可以包括水平式发光二极管(lateral LED)。发光单元160可以具有对应的第二导电端子165。在一实施例中,第二导电端子165的材质可以相同或相似于第一导电端子115,但本发明不限于此。在本实施例中,一个发光单元160上的其中一个第二导电端子165可以被称为正极,一个发光单元160上的其中另一个第二导电端子165可以被称为负极。
在本实施例中,发光单元160可以为微发光二极管(micro LED;μLED)。
在本实施例中,驱动单元110与第一转移载板131之间及/或发光单元160与第一转移载板131之间可以具有对应的离型层138,但本发明不限于此。
请参照图1E至图1F,将第二转移载板132上的驱动单元110及发光单元160转移至电路基板170。
举例而言,如图1E所示,可以将驱动单元110的第一导电端子115及/或发光单元160的第二导电端子165面向且极靠近或接触电路基板170上对应的线路(如:对应的连接垫175)。然后,可以借由直接加热或激光加热的方式,使第一导电端子115及/或第二导电端子165至少部分地熔融,而预期可以接触电路基板170上对应的线路(后述称为:连接步骤)。之后,可以借由加热或照光的方式使驱动单元110及/或发光单元160从第二转移载板132上分离(如:使离型层138的结合力降低或被分解)(后述称为:分离步骤)。如此一来,可以形成相同或相似于如图1F所示的结构。另外,上述的方式仅为示例性地举例,于本发明并不加以限制。
另外,为求清楚表示,于部分的附图中可能仅显示了电路基板170上的部分线路(如:对应的连接垫175)或省略了电路基板170上对应的线路。
在本实施例中,驱动单元110的厚度110h与发光单元160的厚度160h基本上相同。因此,可以借由一次性的方式,将第二转移载板132上的驱动单元110及发光单元160借由相同的连接步骤及分离步骤而一起转移至电路基板170。在本实施例或后续类似的叙述中,「两厚度基本上相同」可以考虑到制作精度和与测量相关的误差(如:剖面的偏移或用于测量的图像解析度,但不限)而在±30%的范围内。较佳地,可以在±20%的范围内。如此一来,可以使制造方法较为容易。
在一实施例中,以微发光二极管(micro LED;μLED)作为发光单元160为例,在发光单元160的厚度160h的±6%范围内可以视为厚度基本上相同。
在一实施例中,在将驱动单元110及/或发光单元160转移至电路基板170上之后,可以对驱动单元110及/或发光单元160进行电性及/或发光测试。
在一未示的实施例中,失效或效能低落的驱动单元(如:可能是某个驱动单元110)及/或发光单元(如:可能是某个发光单元160)可以借由解焊步骤而被移除;然后,可以借由相同或相似于前述的方式,置换为另一个驱动单元(如:相同或相似于驱动单元110的驱动单元)及/或发光单元(如:相同或相似于发光单元160的发光单元)。
在一实施例中,借由熔点低于260℃的焊料可以较容易地进行驱动单元及/或发光单元的置换或对应的修复。
请参照图1F,经过上述制造方法即可大致上完成本实施例的显示装置100的制作。上述的显示装置100包括电路基板170、驱动单元110以及发光单元160。驱动单元110配置于电路基板170上。发光单元160配置于电路基板170上。驱动单元110的厚度110h基本上相同于发光单元160的厚度160h。
在本实施例中,第一发光单元160R、第二发光单元160G、第三发光单元160B及对应的驱动单元110可以构成像素单元PU。在图1F中,仅示例性地显示了显示装置100中的其中一个像素单元PU,但本发明对于像素单元PU的个数及其配置方式并不加以限制。在一未显示的实施例中,一个像素单元中的第一发光单元160R、第二发光单元160G、第三发光单元160B或驱动单元110的数量也可以是多个。
在本实施例中,电路基板170包括被动式电路板。在一实施例中,电路基板170可以不具有主动元件(如:晶体管)。在一实施例中,电路基板170可以仅具有对应的线路。在一实施例中,电路基板170可以仅具有对应的线路及对应的被动元件。在一实施例中,电路基板170可以具有主动元件,但前述的主动元件并不是用于驱动发光单元160,而这样的方式也可被涵盖于本实施例所述的被动式电路板中。
在一实施例中,电路基板170可以是硬板。在一实施例中,电路基板170可以是软板。在一实施例中,电路基板170可以是软硬接合板。
在本实施例中,电路基板170包括被动式电路板,且驱动单元110可以借由电路基板170中对应的线路以驱动对应的发光单元160,而可使其发出对应颜色的光。因此,电路基板170的成本可以较为低廉且/或良率可以较佳。并且,驱动单元110可以借由前述的方式形成、转移及/或检测。如此一来,可以使显示装置100具有较佳的良率或品质。
图2A至图2F是依照本发明的第二实施例的一种显示装置的部分制造方法的部分剖视示意图。本实施例的显示装置200的制造方法与第一实施例的显示装置100的制造方法相似,其类似的构件以相同的标号表示,且具有类似的材质、功能及/或形成方式,并省略描述。
请参照图2A,于基板291上形成形成驱动元件113。在一实施例中,基板291可以包括玻璃,但本发明不限于此。
请参照图2A至图2B,在一实施例中,可以借由研磨、蚀刻或其他适宜的方式,移除部分的基板291,而形成具有厚度较薄的基板292。在一实施例中,若基板291的厚度够薄,也可以省略前述的薄化步骤。
在一实施例中,基板291可以被置于载板上,但本发明不限于此。
请参照图2B至图2C,可以借由切单制程(singulation process),以形成对应的驱动单元210。举例而言,可以借由切割、蚀刻及/或研磨的方式,以移除部分的基板292,而可以形成对应的基材211。如此一来,至少可以由对应的驱动元件113、对应的基材211及对应的第一导电端子115构成驱动单元210。
在一实施例中,借由前述的薄化步骤可以较容易地调整驱动单元210的厚度210h。
请参照图2D,将驱动单元210及发光单元260转移至转移载板。值得注意的是,本发明并未限定驱动单元210及发光单元260的转移先后顺序。
在本实施例中,发光单元260可以为次毫米发光二极管(mini LED)。举例而言,发光单元260可以包括基板269、位于基板269上的磊晶层267(可以包括多个膜层的堆叠)以及对应的第二导电端子165。
请参照图2E至图2F,将第二转移载板132上的驱动单元210及发光单元260转移至电路基板170。图2E至图2F的转移方式可以相同或相似于图1E至图1F所叙述的转移方式,故于此不加以赘述。
在本实施例中,驱动单元210的厚度210h与发光单元260的厚度260h基本上相同。如此一来,可以使制造方法较为容易。
在一实施例中,在将驱动单元210及/或发光单元260转移至电路基板170上之后,可以对驱动单元210及/或发光单元260进行电性及/或发光测试。
在一未示的实施例中,失效或效能低落的驱动单元(如:可能是某个驱动单元210)及/或发光单元(如:可能是某个发光单元260)可以借由解焊步骤而被移除;然后,可以借由相同或相似于前述的方式,置换为另一个驱动单元(如:相同或相似于驱动单元210的驱动单元)及/或发光单元(如:相同或相似于发光单元260的发光单元)。
在一实施例中,借由熔点低于260℃的焊料可以较容易地进行驱动单元及/或发光单元的置换或对应的修复。
请参照图2F,经过上述制造方法即可大致上完成本实施例的显示装置200的制作。上述的显示装置100包括电路基板170、驱动单元210以及发光单元260。驱动单元210配置于电路基板170上。发光单元260配置于电路基板170上。驱动单元210的厚度210h基本上相同于发光单元260的厚度260h。
在一实施例中,以次毫米发光二极管(mini LED)作为发光单元260为例,在发光单元260的厚度260h的±15微米(micrometer;μm)范围内可以视为厚度基本上相同。
在本实施例中,发光单元260包括具有不同颜色的第一发光单元260R、第二发光单元260G及第三发光单元260B。第一发光单元260R、第二发光单元260G、第三发光单元260B及对应的驱动单元210可以构成像素单元PU。
综上所述,本发明可以借由成本较低廉的方式(如:低温多晶硅制程)形成驱动单元。然后,借由一次性的转移方式,将驱动单元与发光单元从转移载板上转移至电路基板。转移至电路基板上的驱动单元或发光单元可以对应地进行测试、置换或对应的修复。如此一来,显示装置的制造方法可以较为简单,并且,显示装置可以具有较低廉的制造成本及/或具有较佳的良率或品质。
当然,本发明还可有其它多种实施例,在不背离本发明精神及其实质的情况下,熟悉本领域的技术人员当可根据本发明作出各种相应的改变和变形,但这些相应的改变和变形都应属于本发明所附的权利要求的保护范围。
Claims (9)
1.一种显示装置,其特征在于,包括:
电路基板;
驱动单元,配置于所述电路基板上;以及
发光单元,配置于所述电路基板上,其中所述驱动单元的厚度基本上相同于所述发光单元的厚度;
其中,借由一次性的方式,将转移载板上的所述驱动单元及所述发光单元借由相同的连接步骤及分离步骤而一起转移至所述电路基板。
2.如权利要求1所述的显示装置,其特征在于,所述驱动单元包括:
基材;以及
驱动元件,形成于所述基材上。
3.如权利要求1所述的显示装置,其特征在于,所述驱动单元包括:
第一导电端子,所述驱动单元以所述第一导电端子面向所述电路基板的方式配置于所述电路基板上,且所述第一导电端子的材质包括熔点低于260℃的焊料。
4.如权利要求1所述的显示装置,其特征在于,所述发光单元包括覆晶式或水平式发光二极管。
5.如权利要求1所述的显示装置,其特征在于,所述电路基板包括被动式电路板。
6.如权利要求1所述的显示装置,其特征在于,所述发光单元包括具有不同颜色的第一发光单元、第二发光单元及第三发光单元,且所述第一发光单元、所述第二发光单元及所述第三发光单元构成像素单元。
7.一种显示装置的制造方法,其特征在于,包括:
提供电路基板;
配置驱动单元于所述电路基板上;以及
配置发光单元于所述电路基板上,其中所述驱动单元的厚度基本上相同于所述发光单元的厚度;
更包括:
提供转移载板;
配置所述驱动单元于所述转移载板上;
配置所述发光单元于所述转移载板上;以及
将配置于所述转移载板上的所述驱动单元及所述发光单元转移至所述电路基板上;
其中,借由一次性的方式,将配置于所述转移载板上的所述驱动单元及所述发光单元借由相同的连接步骤及分离步骤而一起转移至所述电路基板。
8.如权利要求7所述的显示装置的制造方法,其特征在于,所述驱动单元的形成方式包括:
于制作载板上形成基材;以及
于所述制作载板上形成驱动元件,且所述基材及所述驱动元件构成所述驱动单元。
9.如权利要求7所述的显示装置的制造方法,其特征在于,所述驱动单元的形成方式包括:
于基板上形成驱动元件;以及
移除部分的所述基板以形成基材,且所述基材及所述驱动元件构成所述驱动单元。
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